JPH07249790A - Semiconductor photoelectric conversion material - Google Patents

Semiconductor photoelectric conversion material

Info

Publication number
JPH07249790A
JPH07249790A JP6068064A JP6806494A JPH07249790A JP H07249790 A JPH07249790 A JP H07249790A JP 6068064 A JP6068064 A JP 6068064A JP 6806494 A JP6806494 A JP 6806494A JP H07249790 A JPH07249790 A JP H07249790A
Authority
JP
Japan
Prior art keywords
semiconductor
photoelectric conversion
conversion material
coloring matter
spectral sensitizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6068064A
Other languages
Japanese (ja)
Other versions
JP3579078B2 (en
Inventor
Shozo Yanagida
祥三 柳田
Yuji Wada
雄二 和田
Hiromitsu Miyazaki
裕光 宮崎
Takashi Murakoshi
敬 村越
Gendairou Kanou
厳大郎 狩野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ishihara Sangyo Kaisha Ltd
Original Assignee
Ishihara Sangyo Kaisha Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ishihara Sangyo Kaisha Ltd filed Critical Ishihara Sangyo Kaisha Ltd
Priority to JP06806494A priority Critical patent/JP3579078B2/en
Publication of JPH07249790A publication Critical patent/JPH07249790A/en
Application granted granted Critical
Publication of JP3579078B2 publication Critical patent/JP3579078B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/542Dye sensitized solar cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)

Abstract

PURPOSE:To enhance the photoelectric conversion efficiency by thermally circulating a liquid containing a semiconductor and a spectral sensitization coloring matter so that the coloring matter is adsorbed to the surface of the semiconductor. CONSTITUTION:A liquid containing a semiconductor and a spectral sensitization coloring matter is thermally circulated so that the coloring matter is adsorbed to the surface of the semiconductor. When the coloring matter adsorbed to the semiconductor photoelectric conversion material is irradiated with solar beam, the spectral sensitization coloring matter absorbs visible light and excited. Emitted electrons migrate to the semiconductor thence through a transparent conductive glass electrode to a pair electrode. The oxidoreduction system in an electrolyte is reduced by the electrons migrated to the pair electrode. The spectral sensitization coloring matter, from which the electrons have migrated, is in oxidized form which is eventually reduced by the oxidoreduction system in the electrolyte to recover the original state. In other words, electrons flow to constitute a solar cell thus enhancing the photoelectric conversion efficiency.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、光電変換材料に用いる
半導体に関する。また、その半導体を用いた太陽電池に
関する。
TECHNICAL FIELD The present invention relates to a semiconductor used as a photoelectric conversion material. Further, the present invention relates to a solar cell using the semiconductor.

【0002】[0002]

【従来の技術】光電変換材料とは、電極間の電気化学反
応を利用して光エネルギーを電気エネルギーに変換する
材料である。光電変換材料に光を照射すると、一方の電
極側で電子が発生し、対電極に移動する。対電極に移動
した電子は、電解質中をイオンとして移動して一方の電
極にもどる。すなわち、光電変換材料は光エネルギーを
電気エネルギーとして連続して取り出せる材料であり、
たとえば、太陽電池などに利用されている。この光電変
換材料は、半導体表面に可視光領域に吸収を持つ分光増
感色素を吸着させたものが用いられている。たとえば、
特開平1−220380号には、金属酸化物半導体の表
面に、遷移金属錯体などの分光増感色素層を有する太陽
電池を記載している。また、特許出願公表平5−504
023号には、金属イオンでドープした酸化チタン半導
体層の表面に、遷移金属錯体などの分光増感色素層を有
する太陽電池を記載している。
2. Description of the Related Art A photoelectric conversion material is a material that converts light energy into electric energy by utilizing an electrochemical reaction between electrodes. When the photoelectric conversion material is irradiated with light, electrons are generated on one electrode side and move to the counter electrode. The electrons that have moved to the counter electrode move as ions in the electrolyte and return to one electrode. That is, the photoelectric conversion material is a material that can continuously extract light energy as electric energy,
For example, it is used for solar cells. As this photoelectric conversion material, a semiconductor surface on which a spectral sensitizing dye having absorption in the visible light region is adsorbed is used. For example,
JP-A 1-220380 describes a solar cell having a spectral sensitizing dye layer such as a transition metal complex on the surface of a metal oxide semiconductor. Also, the patent application publication No. Hei 5-504
No. 023 describes a solar cell having a spectral sensitizing dye layer such as a transition metal complex on the surface of a titanium oxide semiconductor layer doped with metal ions.

【0003】[0003]

【発明が解決しようとする課題】前記の特開平1−22
0380号や特許出願公表平5−504023号には、
半導体の表面に分光増感色素を吸着する方法として、半
導体を分光増感色素の水溶液に室温下で浸漬する方法を
記載している。しかしながら、この方法では、必要な量
の分光増感色素を吸着し難く、また、強固に吸着するこ
とができない。このため、吸着処理に長い時間が必要に
なったり、また、半導体の光電変換効率が低下するなど
の問題がある。
DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
No. 0380 and Japanese Patent Application Publication No. 5-504023,
As a method of adsorbing the spectral sensitizing dye on the surface of the semiconductor, a method of immersing the semiconductor in an aqueous solution of the spectral sensitizing dye at room temperature is described. However, with this method, it is difficult to adsorb a required amount of the spectral sensitizing dye, and it is not possible to adsorb strongly. Therefore, there are problems that a long time is required for the adsorption process and that the photoelectric conversion efficiency of the semiconductor decreases.

【0004】[0004]

【課題を解決するための手段】本発明者らは、前記の問
題を解決するために、種々の開発研究を行った結果、
(1)半導体と分光増感色素とを含有した液体を加熱還
流して、該半導体表面に該分光増感色素を吸着させる
と、優れた光電変換効率を有する光電変換材料用半導体
が効率よく得られること、(2)本発明の光電変換材料
用半導体は、太陽電池などの光電変換材料に有用である
ことなどを見出し、本発明を完成した。すなわち、本発
明の目的は、優れた光電変換効率を有する光電変換材料
用半導体を提供することにある。さらに、この光電変換
材料用半導体を用いた太陽電池などの光電変換材料を提
供することにある。
The inventors of the present invention have conducted various development studies in order to solve the above problems, and as a result,
(1) When a liquid containing a semiconductor and a spectral sensitizing dye is heated and refluxed to adsorb the spectral sensitizing dye on the surface of the semiconductor, a semiconductor for photoelectric conversion material having excellent photoelectric conversion efficiency is efficiently obtained. That is, (2) the semiconductor for photoelectric conversion materials of the present invention has been found to be useful for photoelectric conversion materials such as solar cells, and the present invention has been completed. That is, an object of the present invention is to provide a semiconductor for a photoelectric conversion material having excellent photoelectric conversion efficiency. Further, it is to provide a photoelectric conversion material such as a solar cell using the semiconductor for photoelectric conversion material.

【0005】本発明は、半導体と分光増感色素とを含有
した液体を加熱還流して、該半導体表面に該分光増感色
素を吸着させた光電変換材料用半導体である。本発明に
おいて、半導体としては、酸化チタン、酸化亜鉛、酸化
タングステン、チタン酸バリウム、チタン酸ストロンチ
ウム、硫化カドミウムなどの公知の半導体の一種または
二種以上を用いることができる。特に、安定性、安全性
の点から酸化チタンが好ましい。本発明において、酸化
チタンとはアナタース型酸化チタン、ルチル型酸化チタ
ン、無定形酸化チタン、メタチタン酸、オルソチタン酸
などの各種の酸化チタンあるいは水酸化チタン、含水酸
化チタンを意味する。前記の半導体は、粒子状または膜
状の半導体を用いることができる。膜状の半導体、特
に、酸化チタン膜を用いるのが好ましく、導電性支持体
上に形成した膜状の半導体を用いるのが好ましい。
The present invention is a semiconductor for photoelectric conversion material in which a liquid containing a semiconductor and a spectral sensitizing dye is heated and refluxed to adsorb the spectral sensitizing dye on the surface of the semiconductor. In the present invention, as the semiconductor, one or more known semiconductors such as titanium oxide, zinc oxide, tungsten oxide, barium titanate, strontium titanate, and cadmium sulfide can be used. In particular, titanium oxide is preferable in terms of stability and safety. In the present invention, titanium oxide means various kinds of titanium oxide such as anatase type titanium oxide, rutile type titanium oxide, amorphous titanium oxide, metatitanic acid, orthotitanic acid, titanium hydroxide, and hydrous titanium oxide. As the semiconductor, a particle-shaped or film-shaped semiconductor can be used. It is preferable to use a film-shaped semiconductor, particularly a titanium oxide film, and it is preferable to use a film-shaped semiconductor formed on a conductive support.

【0006】また、本発明において、分光増感色素は、
可視光領域および/または赤外光領域に吸収を持つもの
であり、種々の金属錯体や有機色素の一種または二種以
上を用いることができる。本発明においては、分光増感
色素の分子中にカルボキシル基、ヒドロキシアルキル
基、ヒドロキシル基、スルホン基、カルボキシアルキル
基の官能基を有するものが半導体への吸着が早いため、
好ましい。また、分光増感の効果や耐久性に優れている
ため、金属錯体が好ましい。金属錯体としては、銅フタ
ロシアニン、チタニルフタロシアニンなどの金属フタロ
シアニン、クロロフィル、ヘミン、特開平1−2203
80号や特許出願公表平5−504023号に記載のル
テニウム、オスミウム、鉄、亜鉛の錯体を用いることが
できる。有機色素としては、メタルフリーフタロシアニ
ン、シアニン系色素、メロシアニン系色素、キサンテン
系色素、トリフェニルメタン色素を用いることができ
る。シアニン系色素としては、具体的には、NK119
4、NK3422(いずれも日本感光色素研究所製)が
挙げられる。メロシアニン系色素としては、具体的に
は、NK2426、NK2501(いずれも日本感光色
素研究所製)が挙げられる。キサンテン系色素として
は、具体的には、ウラニン、エオシン、ローズベンガ
ル、ローダミンB、ジブロムフルオレセインが挙げられ
る。トリフェニルメタン色素としては、具体的には、マ
ラカイトグリーン、クリスタルバイオレットが挙げられ
る。
In the present invention, the spectral sensitizing dye is
It has absorption in the visible light region and / or infrared light region, and one or more kinds of various metal complexes and organic dyes can be used. In the present invention, those having a functional group of a carboxyl group, a hydroxyalkyl group, a hydroxyl group, a sulfone group, and a carboxyalkyl group in the molecule of the spectral sensitizing dye are adsorbed quickly on the semiconductor,
preferable. Further, a metal complex is preferable because it is excellent in spectral sensitization effect and durability. Examples of the metal complex include metal phthalocyanines such as copper phthalocyanine and titanyl phthalocyanine, chlorophyll, hemin, and JP-A 1-2203.
Complexes of ruthenium, osmium, iron and zinc described in No. 80 and Japanese Patent Application Publication No. 5-504023 can be used. As the organic dye, metal-free phthalocyanine, cyanine dye, merocyanine dye, xanthene dye, triphenylmethane dye can be used. As the cyanine dye, specifically, NK119
4, NK3422 (all manufactured by Japan Photosensitive Dye Research Institute). Specific examples of the merocyanine dye include NK2426 and NK2501 (both manufactured by Japan Photosensitive Dye Research Institute). Specific examples of the xanthene dyes include uranine, eosin, rose bengal, rhodamine B, and dibromofluorescein. Specific examples of the triphenylmethane dye include malachite green and crystal violet.

【0007】前記の半導体と前記の分光増感色素とを含
有した液体を加熱還流して、該半導体表面に該分光増感
色素を吸着させる。前記の液体としては、使用する分光
増感色素を溶解するものであればよく、具体的には、
水、アルコール、トルエン、ジメチルホルムアミドを用
いることができる。前記の液体に半導体と分光増感色素
とを含有させ、次いで、該液体の(沸点−10℃)〜沸
点、好ましくは(沸点−5℃)〜沸点の温度範囲に加熱
し、還流下、該温度を保持する。加熱還流の時間は適宜
設定することができるが、5分〜48時間程度が適当で
ある。半導体と分光増感色素の含有量は、用途に応じて
適宜設定できる。このようにして、本発明の光電変換材
料用半導体を得る。必要に応じて、本発明の光電変換材
料用半導体を加熱還流した液体から分離したり、乾燥し
たり、あるいは焼成したりしてもよい。
A liquid containing the semiconductor and the spectral sensitizing dye is heated and refluxed to adsorb the spectral sensitizing dye on the surface of the semiconductor. The liquid may be any liquid that dissolves the spectral sensitizing dye to be used, and specifically,
Water, alcohol, toluene, dimethylformamide can be used. The liquid is made to contain a semiconductor and a spectral sensitizing dye, and then heated to a temperature range of (boiling point-10 ° C) to boiling point, preferably (boiling point-5 ° C) to boiling point of the liquid, under reflux, Hold the temperature. The heating / refluxing time can be appropriately set, but about 5 minutes to 48 hours is suitable. The contents of the semiconductor and the spectral sensitizing dye can be appropriately set depending on the application. In this way, the semiconductor for photoelectric conversion material of the present invention is obtained. If necessary, the semiconductor for photoelectric conversion material of the present invention may be separated from the heated and refluxed liquid, dried, or fired.

【0008】本発明の光電変換材料用半導体が粒子状の
場合には、光電変換材料用半導体を導電性支持体に塗布
あるいは吹き付けて、該導電性支持体上に該光電変換材
料用半導体の膜を形成して、光電変換材料に用いるのが
よい。また、本発明の光電変換材料用半導体が膜状であ
って、導電性支持体上に保持していない場合には、光電
変換材料用半導体を導電性支持体上に付けて、光電変換
材料に用いるのがよい。
When the semiconductor for photoelectric conversion material of the present invention is in the form of particles, the semiconductor for photoelectric conversion material is coated or sprayed on a conductive support to form a film of the semiconductor for photoelectric conversion material on the conductive support. Is preferably used for a photoelectric conversion material. Further, when the semiconductor for photoelectric conversion material of the present invention is in the form of a film and is not held on the conductive support, the semiconductor for photoelectric conversion material is attached on the conductive support to give a photoelectric conversion material. Good to use.

【0009】本発明の光電変換材料用半導体は太陽電池
に用いることができる。すなわち、透明性導電膜をコー
トしたガラス板などの支持体上に光電変換材料用半導体
の膜を形成して電極とし、次に、対電極として別の透明
性導電膜をコートしたガラス板などの支持体を備え、こ
れらの電極間に電解質を封入して太陽電池とすることが
できる。本発明の光電変換材料用半導体に吸着した分光
増感色素に太陽光を照射すると、分光増感色素は可視領
域の光を吸収して励起する。この励起によって発生する
電子は半導体に移動し、次いで、透明導電性ガラス電極
を通って対電極に移動する。対電極に移動した電子は、
電解質中の酸化還元系を還元する。一方、半導体に電子
を移動させた分光増感色素は、酸化体の状態になってい
るが、この酸化体は電解質中の酸化還元系によって還元
され、元の状態に戻る。このようにして、電子が流れ、
本発明の光電変換材料用半導体を用いた太陽電池を構成
することができる。
The semiconductor for photoelectric conversion material of the present invention can be used for solar cells. That is, a film of a semiconductor for a photoelectric conversion material is formed as an electrode on a support such as a glass plate coated with a transparent conductive film, and then a glass plate coated with another transparent conductive film as a counter electrode. A solar cell can be obtained by providing a support and enclosing an electrolyte between these electrodes. When the spectral sensitizing dye adsorbed on the semiconductor for photoelectric conversion material of the present invention is irradiated with sunlight, the spectral sensitizing dye absorbs and excites light in the visible region. The electrons generated by this excitation move to the semiconductor and then to the counter electrode through the transparent conductive glass electrode. The electrons that have moved to the counter electrode are
Reduces the redox system in the electrolyte. On the other hand, the spectral sensitizing dye in which electrons have been transferred to the semiconductor is in an oxidant state. This oxidant is reduced by the redox system in the electrolyte and returns to its original state. In this way, electrons flow,
A solar cell using the semiconductor for photoelectric conversion material of the present invention can be constructed.

【0010】[0010]

【実施例】本発明を以下の実施例により説明するが、本
発明はこれに限定されるものではない。
EXAMPLES The present invention will be described with reference to the following examples, but the present invention is not limited thereto.

【0011】実施例1 1.半導体の調製 80g/lの硫酸チタニル溶液1リットルを85℃に加
熱し、この温度で3時間保持し、硫酸チタニルを加水分
解して酸化チタン微粒子を得た。このようにして得られ
た酸化チタン微粒子を濾過し、洗浄した後、水に分散さ
せて、TiO2基準で200g/lの懸濁液とした。次
いで、この懸濁液に硝酸水溶液を添加し、該懸濁液のp
Hを1.0にした後、オートクレーブに入れ、180℃
の温度で13時間、飽和蒸気圧下で水熱処理を行った。
次に、この懸濁液に、懸濁液中のTiO2 基準に対して
ポリエチレングリコール(平均分子量20000)40
重量%を添加し、60℃の温度に加熱した後、フッ素を
ドープした酸化スズをコートした透明導電性ガラス板に
塗布し、自然乾燥し、引き続き、600℃の温度で30
分間焼成して、支持体上に膜状の酸化チタンを形成し
た。
Embodiment 1 1. Preparation of Semiconductor 1 liter of 80 g / l titanyl sulfate solution was heated to 85 ° C. and kept at this temperature for 3 hours to hydrolyze titanyl sulfate to obtain titanium oxide fine particles. The titanium oxide fine particles thus obtained were filtered, washed, and then dispersed in water to obtain a suspension of 200 g / l based on TiO 2 . Then, a nitric acid aqueous solution is added to this suspension, and the p
After adjusting H to 1.0, put it in an autoclave and keep it at 180 ℃.
Hydrothermal treatment was performed under saturated vapor pressure for 13 hours at the above temperature.
Next, this suspension was mixed with 40% polyethylene glycol (average molecular weight 20000) based on the TiO 2 standard in the suspension.
% By weight and heated to a temperature of 60 ° C., then applied to a transparent conductive glass plate coated with fluorine-doped tin oxide, air-dried, and subsequently heated at a temperature of 600 ° C. to 30 ° C.
The film was baked for minutes to form a film-shaped titanium oxide on the support.

【0012】2.分光増感色素の吸着 シス−(SCN- 2 −ビス(2,2’−ビピリジル−
4,4’−ジカルボキシレート)ルテニウム(II)で
表される分光増感色素をエタノール液に溶解した。この
分光増感色素の濃度は3×10-4モル/lであった。次
に、このエタノールの液体に、膜状の酸化チタンを形成
した前記の支持体を入れ、加熱し、沸点の温度で加熱還
流を15分間して、本発明の光電変換材料用半導体(試
料A)を得た。この試料Aの分光増感色素の吸着量は、
酸化チタン膜の比表面積1cm2あたり61μgであっ
た。
2. Adsorption of spectral sensitizing dye cis- (SCN - ) 2 -Bis (2,2'-bipyridyl-
4,4'-dicarboxylate) ruthenium (II)
The spectral sensitizing dyes represented were dissolved in ethanol solution. this
The concentration of spectral sensitizing dye is 3 × 10 -Four It was mol / l. Next
To form a film of titanium oxide in this ethanol liquid
Put the above-mentioned support, heat it, and heat it back to the boiling point.
For 15 minutes, the semiconductor for photoelectric conversion material of the present invention (test
The charge A) was obtained. The adsorption amount of the spectral sensitizing dye of this sample A is
Specific surface area of titanium oxide film 1 cm 2 61 μg per
It was

【0013】3.光電変換材料の作成 前記の試料Aを一方の電極として備え、対電極として、
フッ素をドープした酸化スズをコートし、さらにその上
に白金を担持した透明導電性ガラス板を用いた。2つの
電極の間に電解質を入れ、この側面を樹脂で封入した
後、リード線を取付けて、本発明の光電変換材料(試料
B)を作成した。なお、前記の電解質は、体積比が1:
4であるアセトニトリル/炭酸エチレンの混合溶媒に、
テトラプロピルアンモニウムアイオダイドとヨウ素と
を、それぞれの濃度が0.46モル/l、0.06モル
/lとなるように溶解したものを用いた。前記の試料B
に、ソーラーシュミレーターで100W/m2 の強度の
光を照射したところ、Voc(開回路状態の電圧)は
0.62Vであり、Joc(回路を短絡したとき流れる
電流の密度)は1.22mA/cm2 であり、FF(曲
線因子)は0.70であり、η(変換効率)は5.3%
であり、太陽電池として有用であることがわかった。
3. Preparation of photoelectric conversion material The sample A was provided as one electrode, and as a counter electrode,
A transparent conductive glass plate was used in which fluorine-doped tin oxide was coated and platinum was further supported thereon. An electrolyte was put between two electrodes, the side surface was sealed with a resin, and then a lead wire was attached to prepare a photoelectric conversion material (Sample B) of the present invention. The above electrolyte has a volume ratio of 1 :.
4 into a mixed solvent of acetonitrile / ethylene carbonate,
Tetrapropylammonium iodide and iodine were used so that their concentrations were 0.46 mol / l and 0.06 mol / l, respectively. Sample B above
When irradiated with light of 100 W / m 2 intensity by a solar simulator, Voc (voltage in open circuit state) was 0.62 V, and Joc (current density flowing when the circuit was short-circuited) was 1.22 mA / cm 2 , FF (fill factor) is 0.70, and η (conversion efficiency) is 5.3%.
And was found to be useful as a solar cell.

【0014】比較例1 前記実施例1の2.において、シス−(SCN- 2
ビス(2,2’−ビピリジル−4,4’−ジカルボキシ
レート)ルテニウム(II)で表される分光増感色素を
溶解したエタノール液に、室温下、膜状の酸化チタンを
形成した前記の支持体を入れ、15分間保持すること以
外は実施例1の2.と同様に処理して、光電変換材料用
半導体(試料C)を得た。この試料Cの分光増感色素の
吸着量は、酸化チタン膜の比表面積1cm2 あたり10
μgであった。
Comparative Example 1 2. In cis - (SCN -) 2 -
A film-shaped titanium oxide was formed at room temperature in an ethanol solution in which a spectral sensitizing dye represented by bis (2,2'-bipyridyl-4,4'-dicarboxylate) ruthenium (II) was dissolved. 1. of Example 1 except that the support was put in and kept for 15 minutes. The same process as in (1) was performed to obtain a semiconductor for photoelectric conversion material (Sample C). Adsorption of spectral sensitizing dyes of the sample C has a specific surface area 1 cm 2 per 10 of the titanium oxide film
It was μg.

【0015】比較例2 前記実施例1の2.において、シス−(SCN- 2
ビス(2,2’−ビピリジル−4,4’−ジカルボキシ
レート)ルテニウム(II)で表される分光増感色素を
溶解したエタノール液に、室温下、膜状の酸化チタンを
形成した前記の支持体を入れ、16時間保持すること以
外は実施例1の2.と同様に処理して、光電変換材料用
半導体(試料D)を得た。この試料Dの分光増感色素の
吸着量は、酸化チタン膜の比表面積1cm2 あたり65
μgであった。前記実施例1の3.において、前記の試
料Dを用いること以外は実施例1の3.と同様に処理し
て、光電変換材料(試料E)を得た。前記の試料Eに、
ソーラーシュミレーターで100W/m2 の強度の光を
照射したところ、Voc(開回路状態の電圧)は0.5
7Vであり、Joc(回路を短絡したとき流れる電流の
密度)は1.09mA/cm2 であり、FF(曲線因
子)は0.68であり、η(変換効率)は4.3%であ
った。
Comparative Example 2 2. In cis - (SCN -) 2 -
A film-shaped titanium oxide was formed at room temperature in an ethanol solution in which a spectral sensitizing dye represented by bis (2,2'-bipyridyl-4,4'-dicarboxylate) ruthenium (II) was dissolved. 1. of Example 1 except that the support was put in and kept for 16 hours. The same treatment as described above was performed to obtain a semiconductor for photoelectric conversion material (Sample D). The adsorbed amount of the spectral sensitizing dye of this sample D was 65 per 1 cm 2 of the specific surface area of the titanium oxide film.
It was μg. 3. of Example 1 above. 2. In Example 1, except that the sample D is used. A photoelectric conversion material (Sample E) was obtained by performing the same treatment as described above. For sample E above,
Voc (open circuit voltage) is 0.5 when irradiated with light of 100 W / m 2 intensity with a solar simulator.
7 V, Joc (density of current flowing when the circuit is short-circuited) is 1.09 mA / cm 2 , FF (fill factor) is 0.68, and η (conversion efficiency) is 4.3%. It was

【0016】前記の実施例および比較例から明らかなよ
うに、半導体と分光増感色素とを含有した液体を加熱還
流して、該半導体表面に該分光増感色素を吸着させる
と、分光増感色素が強固に吸着するため、優れた光電変
換効率を有する光電変換材料用半導体が得られた。
As is clear from the above Examples and Comparative Examples, when a liquid containing a semiconductor and a spectral sensitizing dye is heated under reflux to adsorb the spectral sensitizing dye on the surface of the semiconductor, the spectral sensitization is carried out. Since the dye is strongly adsorbed, a semiconductor for photoelectric conversion material having excellent photoelectric conversion efficiency was obtained.

【0017】[0017]

【発明の効果】本発明は、半導体と分光増感色素とを含
有した液体を加熱還流して、該半導体表面に該分光増感
色素を吸着させてなる光電変換材料用半導体であって、
優れた光電変換効率を有するため、種々の光電変換材料
に有用である。また、本発明は、前記の光電変換材料用
半導体を用いた太陽電池であって、廉価であって、しか
も、優れた光電変換効率を有する。
INDUSTRIAL APPLICABILITY The present invention is a semiconductor for a photoelectric conversion material, which is obtained by heating and refluxing a liquid containing a semiconductor and a spectral sensitizing dye, and adsorbing the spectral sensitizing dye on the surface of the semiconductor.
Since it has excellent photoelectric conversion efficiency, it is useful for various photoelectric conversion materials. Further, the present invention is a solar cell using the semiconductor for photoelectric conversion material described above, which is inexpensive and has excellent photoelectric conversion efficiency.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 狩野 厳大郎 大阪府大阪市東淀川区大桐3丁目6番1号 シャトー由紀2−306 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Ikutaro Kano 3-6-1 Ogiri, Higashiyodogawa-ku, Osaka-shi, Osaka 2-306 Chateau Yuki

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】半導体と分光増感色素とを含有した液体を
加熱還流して、該半導体表面に該分光増感色素を吸着さ
せてなることを特徴とする光電変換材料用半導体。
1. A semiconductor for photoelectric conversion material, characterized in that a liquid containing a semiconductor and a spectral sensitizing dye is heated and refluxed to adsorb the spectral sensitizing dye on the surface of the semiconductor.
【請求項2】膜状の半導体を用いてなることを特徴とす
る請求項1に記載の光電変換材料用半導体。
2. The semiconductor for photoelectric conversion material according to claim 1, wherein the film-shaped semiconductor is used.
【請求項3】半導体が酸化チタンであることを特徴とす
る請求項1または2に記載の光電変換材料用半導体。
3. The semiconductor for photoelectric conversion material according to claim 1, wherein the semiconductor is titanium oxide.
【請求項4】分光増感色素が金属錯体であることを特徴
とする請求項1に記載の光電変換材料用半導体。
4. The semiconductor for photoelectric conversion material according to claim 1, wherein the spectral sensitizing dye is a metal complex.
【請求項5】請求項1に記載の光電変換材料用半導体を
用いてなることを特徴とする太陽電池。
5. A solar cell comprising the semiconductor for photoelectric conversion material according to claim 1.
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