JPH07242869A - Thin-film electroluminescence element - Google Patents
Thin-film electroluminescence elementInfo
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- JPH07242869A JPH07242869A JP6058362A JP5836294A JPH07242869A JP H07242869 A JPH07242869 A JP H07242869A JP 6058362 A JP6058362 A JP 6058362A JP 5836294 A JP5836294 A JP 5836294A JP H07242869 A JPH07242869 A JP H07242869A
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- thin film
- thin
- heating
- electroluminescent material
- electroluminescence element
- Prior art date
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- Luminescent Compositions (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は電界の印加によって発光
する薄膜エレクトロルミネッセンス（ＥＬ）素子および
その材料に関するものであり、特にその薄膜発光層に用
いられる薄膜ＥＬ材料および該材料を用いた薄膜ＥＬ素
子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film electroluminescence (EL) element which emits light when an electric field is applied and its material, and particularly to a thin film EL material used for the thin film light emitting layer and a thin film EL using the material. Regarding the device.
【０００２】[0002]
【従来の技術】薄膜ＥＬパネルのフルカラー化のために
赤色、緑色、青色を呈するＥＬ発光層の研究が進められ
ている。しかし現在のところ輝度が高く、色純度に優れ
た青色発光材料に良いものがなかった。青色発光体の中
で最も進んだ材料としてはＳｒＳ：Ｃｅがあり，近年の
開発により輝度、色純度ともに著しく向上している。し
かしＳｒＳ：Ｃｅの発光ピークは、Ｃｅの置換するサイ
トの大きさ等から４８０ｎｍ程度より短波長側にはなら
ないことが予想され、純粋な青色は呈さない。またＳｒ
Ｓ自体に潮解性があることや、完全な焼成には１４００
℃以上の加熱が必要である等の問題があり、工業的な製
造工程の中での障害となっている。2. Description of the Related Art Studies have been conducted on EL light emitting layers exhibiting red, green, and blue in order to realize full-color thin film EL panels. However, at present, there is no good blue light emitting material having high brightness and excellent color purity. SrS: Ce is the most advanced material among the blue light-emitting materials, and the brightness and color purity have been remarkably improved by recent development. However, the emission peak of SrS: Ce is expected not to be on the shorter wavelength side than about 480 nm due to the size of the site to be replaced by Ce, etc., and a pure blue color is not exhibited. Also Sr
1400 for S itself to be deliquescent and for complete firing
There are problems such as the need for heating above ℃, which is an obstacle in the industrial manufacturing process.
【０００３】最近、ＭＧａ4Ｓ4：Ｃｅ（Ｍ：アルカリ土
類元素）を用いた薄膜ＥＬ素子が開発され、高輝度でよ
り短波長で発光する点から注目を集めている（特開平５
−６５４７８号公報）。また，ＤａｖｌｏｓらはＥｕ2+
を添加したストロンチウムチオガレートとバリウムチオ
ガレートが主として青色領域で発光することを報告して
いる（Ｊ，Ｓｏｌｉｄ．Ｓｔａｔｅ Ｃｈｅｍ．８３，
３１６（１９８９））。ＳｒＳに比べこれらのチオガレ
ートは一般に潮解性が低く、焼成温度が１１００℃程度
で良い等の利点を持ち工業的に優れている。Recently, MGaFourSFour: Ce (M: alkaline earth
A thin film EL device that uses
It is attracting attention because it emits light at a shorter wavelength (Japanese Patent Laid-Open No. Hei 5
-65478). Also, Davlos et al.2+
Strontium thiogallate and barium thiol
Report that gallate emits mainly in the blue region
(J, Solid. State Chem. 83,
316 (1989)). Compared to SrS, these
Generally has a low deliquescent property and a firing temperature of about 1100 ° C.
It has advantages such as good and is industrially excellent.
【０００４】しかしながら、色純度、色座標に優れ、良
好な青色を呈する薄膜ＥＬ素子は得られていない。However, a thin film EL element which is excellent in color purity and color coordinates and exhibits a favorable blue color has not been obtained.
【０００５】[0005]
【発明が解決しようとする課題】本発明の目的は、色純
度、色座標に優れ、化学的に安定な青色発光体が得られ
る薄膜ＥＬ材料および該材料を発光層とする薄膜ＥＬ素
子を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a thin film EL material which is excellent in color purity and color coordinates and which can obtain a chemically stable blue light emitting body, and a thin film EL element using the material as a light emitting layer. To do.
【０００６】[0006]
【課題を解決するための手段】本発明の上記目的は、次
に示す薄膜ＥＬ材料によって達成される。The above object of the present invention is achieved by the following thin film EL material.
【０００７】すなわち、本発明は、組成式が次式；That is, in the present invention, the composition formula is as follows:
【化１】 ［但し、ＭはＳｒまたはＢａ、ＲＥはランタノイド系元
素をそれぞれ示し、ｘとｙは整数であるが、ｘとｙは等
しくない］で表されるアルカリ土類チオガレートからな
ることを特徴とする薄膜ＥＬ材料にある。[Chemical 1] [Wherein M represents Sr or Ba, RE represents a lanthanoid element, x and y are integers, but x and y are not equal to each other], and a thin film comprising an alkaline earth thiogallate. It is in EL material.
【０００８】上記したように、上式中、Ｍはストロンチ
ウム（Ｓｒ）またはバリウム（Ｂａ）を示す。また、Ｒ
Ｅはランタン（Ｌａ）、セリウム（Ｃｅ）、プラセオジ
ム（Ｐｒ）、ネオジム（Ｎｄ）、ユウロビウム（Ｅｕ）
等のランタノイド系元素を示すが、その中でもセリウム
が好ましく用いられる。このセリウムは経済的に安価で
あり、この点からも優れている。また、ｘとｙは何れも
整数であるが、ｘとｙは等しくない。As described above, in the above formula, M represents strontium (Sr) or barium (Ba). Also, R
E is lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), eurobium (Eu)
Among these, lanthanoid-based elements are shown, among which cerium is preferably used. This cerium is economically inexpensive and is excellent in this respect as well. Further, both x and y are integers, but x and y are not equal.
【０００９】本発明では、このように上記したアルカリ
チオガーレートを母体材料とし、セリウム等のランタノ
イド系元素を付活剤（発光中心）とするものである。こ
のような具体的な薄膜ＥＬ材料の組成としては、ＢａＧ
ａ4Ｓ7：Ｃｅ、Ｂａ3Ｃａ2Ｓ6：Ｃｅ、Ｓｒ2Ｇａ2Ｓ5：
Ｃｅ等が挙げられる。また、本発明の薄膜ＥＬ材料に
は、さらに電荷補償剤としてカリウム等を含有すること
は好ましいことである。In the present invention, the above-mentioned alkali thiogallate is used as the base material, and the lanthanoid element such as cerium is used as the activator (emission center). As a specific composition of such a thin film EL material, BaG
a 4 S 7: Ce, Ba 3 Ca 2 S 6: Ce, Sr 2 Ga 2 S 5:
Ce etc. are mentioned. Further, it is preferable that the thin film EL material of the present invention further contains potassium or the like as a charge compensating agent.
【００１０】このような薄膜ＥＬ材料を得るには、例え
ば以下の方法で行なわれる。すなわち、ＳｒＣＯ3また
はＢａＣＯ3とＧａ2Ｏ3を適当なモル比で混合し、付活
剤としてＣｅＦ3、電荷補償剤としてＫＣｌを加えた混
合物を、９００〜１１００℃の温度でＨ2Ｓ中において
焼成することにより得られる。勿論、これらの材料に代
えてＳｒＳ、ＢａＳ、Ｇａ2Ｓ3、ＣｅＯ2等を使用する
ことも可能であり、電荷補償剤としてはＫＣｌのみなら
ず、適当なイオン半径をもつ１価の陽イオンを提供可能
な化合物ならいずれでもよい。あるいは適当なイオン半
径をもつ３価の陰イオンを用いることも可能である。To obtain such a thin film EL material, for example, the following method is used. That is, SrCO 3 or BaCO 3 and Ga 2 O 3 were mixed at an appropriate molar ratio and CeF 3 as an activator and KCl as a charge compensator were added to a mixture in H 2 S at a temperature of 900 to 1100 ° C. It is obtained by firing at. Of course, it is possible to use SrS, BaS, Ga 2 S 3 , CeO 2 or the like instead of these materials, and not only KCl but also a monovalent cation having an appropriate ionic radius as the charge compensator. Any compound capable of providing Alternatively, a trivalent anion having an appropriate ionic radius can be used.
【００１１】本発明の薄膜ＥＬ素子は、上記した薄膜Ｅ
Ｌ材料を発光層として用いるものである。このような薄
膜ＥＬ素子の構成を示す一例を図１に示す。同図におい
て、１はＡｌ等の上部電極（背面電極）、２は上部絶縁
層、３はバッフア層、４は発光層、５は下部絶縁層、６
はＩＴＯ等の下部電極（透明電極）、７はガラス基板で
ある。上部絶縁層２はＳｉＯ2層２１、Ｓｉ3Ｎ4層２２
からなり、下部絶縁層５はＳｉ3Ｎ4層５１、Ｓｉ Ｏ2層
５２からなる。The thin film EL device of the present invention is a thin film E described above.
The L material is used for the light emitting layer. Such thin
An example showing the structure of the film EL element is shown in FIG. In the figure
, 1 is the upper electrode (back electrode) such as Al, 2 is the upper insulation
Layer, 3 is a buffer layer, 4 is a light emitting layer, 5 is a lower insulating layer, 6
Is a lower electrode (transparent electrode) such as ITO, and 7 is a glass substrate
is there. The upper insulating layer 2 is SiO2Layer 21, Si3NFourLayer 22
And the lower insulating layer 5 is made of Si.3NFourLayer 51, Si O2layer
It consists of 52.
【００１２】これら各層の厚みは、例えばＳｉＯ2層２
１：０．００５μｍ、Ｓｉ3Ｎ4層２２：０．１２μｍ、
バッファ層３：０．１μｍ、発光層４：０．６μｍ、Ｓ
ｉ3Ｎ4層５１：０．２μｍ、ＳｉＯ2層５２：０．０５
μｍである。The thickness of each of these layers is, for example, the SiO 2 layer 2
1: 0.005 μm, Si 3 N 4 layer 22: 0.12 μm,
Buffer layer 3: 0.1 μm, light emitting layer 4: 0.6 μm, S
i 3 N 4 layer 51: 0.2 μm, SiO 2 layer 52: 0.05
μm.
【００１３】[0013]
【実施例】以下、実施例に基づいて本発明を具体的に説
明する。EXAMPLES The present invention will be specifically described below based on examples.
【００１４】実施例１ ＢａＣＯ3とＧａ2Ｏ3をモル比で１：２の割合で混合し
たものを出発原料とし、Ｈ2Ｓ中、９００℃で５時間加
熱した。これをふるいにかけて粒度を揃えた後、Ｈ2Ｓ
中、１０００℃で５時間加熱した。再びふるいにかけて
粒度を揃えた後、ＣｅＦ3とＫＣｌを１０ｍｏｌ％ずつ
添加し、さらにＨ2Ｓ中、１１００℃で５時間加熱し
た。得られた化合物（ＢａＧａ4Ｓ7：Ｃｅ，Ｋ）の３７
４ｎｍで励起したフォトルミネッセンスを図２に示す。
この図２から４６０ｎｍ付近にピークがあることが判
る。 Example 1 A mixture of BaCO 3 and Ga 2 O 3 in a molar ratio of 1: 2 was used as a starting material, and heated in H 2 S at 900 ° C. for 5 hours. After sifting this to make the particle size uniform, H 2 S
In the middle, it heated at 1000 degreeC for 5 hours. After sieving again to make the particle size uniform, 10 mol% each of CeF 3 and KCl were added, and the mixture was further heated in H 2 S at 1100 ° C. for 5 hours. 37% of the obtained compound (BaGa 4 S 7 : Ce, K)
The photoluminescence excited at 4 nm is shown in FIG.
From this FIG. 2, it can be seen that there is a peak near 460 nm.
【００１５】また、この原料を用いて表１に示す条件
下、薄膜からなる発光層および絶縁層を形成し、さらに
図１に示されるような薄膜ＥＬ素子を作製した。この薄
膜ＥＬ素子は青色のエレクトロルミネッセンスを呈し
た。この薄膜ＥＬ素子のエレクトロルミネッセンスを図
３に示す。この時の色座標はＸ＝０．１５３、Ｙ＝０．
１３６であり、輝度は１ＫＨｚ駆動時に０．７ｃｄ／ｍ
2であった。Further, using this raw material, a light emitting layer and an insulating layer made of a thin film were formed under the conditions shown in Table 1, and a thin film EL element as shown in FIG. 1 was prepared. This thin film EL device exhibited blue electroluminescence. The electroluminescence of this thin film EL element is shown in FIG. At this time, the color coordinates are X = 0.153, Y = 0.
136, and the brightness is 0.7 cd / m when driven at 1 KHz.
Was 2 .
【００１６】[0016]
【表１】 [Table 1]
【００１７】実施例２ ＢａＣＯ3とＧａ2Ｏ3をモル比で３：１の割合で混合し
たものを出発原料とし、Ｈ2Ｓ、９００℃で５時間加熱
した。これをふるいにかけて粒度を揃えた後、Ｈ2Ｓ
中、１０００℃で５時間加熱した。再びふるいにかけて
粒度を揃えた後、ＣｅＦ3とＫＣｌをそれぞれ１ｍｏｌ
％、０．１ｍｏｌ％添加し、さらにＨ2Ｓ中、１１００
℃で５時間加熱した。得られた化合物（Ｂａ3Ｇａ
2Ｓ6：Ｃｅ，Ｋ）のフォトルミネッセンスを図４に示
す。この図４から４７０ｎｍ付近にピークがあることが
判る。 Example 2 A mixture of BaCO 3 and Ga 2 O 3 in a molar ratio of 3: 1 was used as a starting material, and heated at H 2 S at 900 ° C. for 5 hours. After sifting this to make the particle size uniform, H 2 S
In the middle, it heated at 1000 degreeC for 5 hours. After sieving again to make the particle size uniform, 1 mol each of CeF 3 and KCl
%, 0.1 mol% was added, and further in H 2 S, 1100
Heated at ° C for 5 hours. Obtained compound (Ba 3 Ga
The photoluminescence of 2 S 6 : Ce, K) is shown in FIG. It can be seen from FIG. 4 that there is a peak near 470 nm.
【００１８】実施例３ ＳｒＣＯ3とＧａ2Ｏ3をモル比で２：１の割合で混合し
たものを出発原料とし、Ｈ2Ｓ中、８８０℃で５時間加
熱した。これをふるいにかけて粒度を揃えた後、Ｈ2Ｓ
中、８８０℃で５時間加熱した。再びふるいにかけて粒
度を揃えた後、ＣｅＦ3とＫＣｌを１０ｍｏｌ％ずつ添
加し、さらにＨ2Ｓ中、８８０℃で５時間加熱した。得
られた化合物（Ｓｒ2Ｇａ2Ｓ5：Ｃｅ，Ｋ）のフォトル
ミネッセンスを図５に示す。この図５から４６０ｎｍ付
近にピークがあることが判る。 Example 3 A mixture of SrCO 3 and Ga 2 O 3 in a molar ratio of 2: 1 was used as a starting material, and heated in H 2 S at 880 ° C. for 5 hours. After sifting this to make the particle size uniform, H 2 S
Heated at 880 ° C. for 5 hours. After sieving again to make the particle size uniform, CeF 3 and KCl were added in an amount of 10 mol% each, and the mixture was further heated in H 2 S at 880 ° C. for 5 hours. The photoluminescence of the obtained compound (Sr 2 Ga 2 S 5 : Ce, K) is shown in FIG. It can be seen from FIG. 5 that there is a peak near 460 nm.
【００１９】また、この原料を用いて表１に示す条件
下、薄膜からなる発光層および絶縁層を形成し、さらに
図１に示されるような薄膜ＥＬ素子を作製した。この薄
膜ＥＬ素子は青色のエレクトロルミネッセンスを呈し
た。この薄膜ＥＬ素子のエレクトロルミネッセンスを図
６に示す。この時の色座標はＸ＝０．２２、Ｙ＝０．３
４６であり、輝度は１ＫＨｚ駆動時に２．４ｃｄ／ｍ2
であった。Further, using this raw material, a light emitting layer and an insulating layer made of a thin film were formed under the conditions shown in Table 1, and a thin film EL element as shown in FIG. 1 was prepared. This thin film EL device exhibited blue electroluminescence. The electroluminescence of this thin film EL element is shown in FIG. The color coordinates at this time are X = 0.22, Y = 0.3
And the luminance is 2.4 cd / m 2 when driven at 1 KHz.
Met.
【００２０】この実施例１で得られたＢａＧａ4Ｓ7：Ｃ
ｅ，Ｋ薄膜ＥＬ素子の色座標Ｘ＝０．１５３、Ｙ＝０．
１３６、実施例３で得られたＳｒ2Ｇａ2Ｓ5：Ｃｅ，Ｋ
薄膜ＥＬ素子の色座標Ｘ＝０．２２、Ｙ＝０．３４６、
並びに参考としてＳｒＳ：Ｃｅ薄膜ＥＬ素子の色座標Ｘ
＝０．１８、Ｙ＝０．３８を図７に示す。BaGa 4 S 7 : C obtained in this Example 1
e, K color coordinates of the thin film EL element X = 0.153, Y = 0.
136, Sr 2 Ga 2 S 5 : Ce, K obtained in Example 3
Color coordinates X = 0.22, Y = 0.346 of thin film EL device,
Also, as a reference, the color coordinate X of the SrS: Ce thin film EL element
= 0.18 and Y = 0.38 are shown in FIG.
【００２１】[0021]
【発明の効果】以上のような本発明により、色純度、色
座標のよい薄膜ＥＬ材料および該材料を発光層とする薄
膜ＥＬ素子が得られた。As described above, according to the present invention, a thin film EL material having good color purity and color coordinates and a thin film EL element using the material as a light emitting layer were obtained.
【図１】 薄膜ＥＬ素子の構造を示す概略図。FIG. 1 is a schematic diagram showing the structure of a thin film EL element.
【図２】 ＢａＧａ4Ｓ7：Ｃｅ，Ｋ材料のフォトルミネ
ッセンスを示すグラフ。FIG. 2 is a graph showing photoluminescence of a BaGa 4 S 7 : Ce, K material.
【図３】 ＢａＧａ4Ｓ7：Ｃｅ，Ｋ薄膜ＥＬ素子のエレ
クトロルミネッセンスを示すグラフ。FIG. 3 is a graph showing electroluminescence of a BaGa 4 S 7 : Ce, K thin film EL device.
【図４】 Ｂａ3Ｇａ2Ｓ6：Ｃｅ，Ｋ材料のフォトルミ
ネッセンスを示すグラフ。FIG. 4 is a graph showing photoluminescence of a Ba 3 Ga 2 S 6 : Ce, K material.
【図５】 Ｓｒ2Ｇａ2Ｓ5：Ｃｅ，Ｋ材料のフォトルミ
ネッセンスを示すグラフ。FIG. 5 is a graph showing the photoluminescence of a Sr 2 Ga 2 S 5 : Ce, K material.
【図６】 Ｓｒ2Ｇａ2Ｓ5：Ｃｅ，Ｋ薄膜ＥＬ素子のエ
レクトロルミネッセンスを示すグラフ。FIG. 6 is a graph showing the electroluminescence of a Sr 2 Ga 2 S 5 : Ce, K thin film EL device.
【図７】 Ｓｒ2Ｇａ2Ｓ5：Ｃｅ，Ｋ薄膜ＥＬ素子、Ｂ
ａＧａ4Ｓ7：Ｃｅ，Ｋ薄膜ＥＬ素子、ＳｒＳ：Ｃｅ薄膜
ＥＬ素子の色座標を示すケリー図。FIG. 7 Sr 2 Ga 2 S 5 : Ce, K thin film EL device, B
FIG. 6 is a Kelly diagram showing color coordinates of an aGa 4 S 7 : Ce, K thin film EL element and an SrS: Ce thin film EL element.
１：上部電極（背面電極）、２（２１，２２）：上部絶
縁層、３：バッフア層、４：発光層、５（５１，５
２）：下部絶縁層、６：ＩＴＯ等の下部電極（透明電
極）、７：ガラス基板。1: upper electrode (back electrode), 2 (21, 22): upper insulating layer, 3: buffer layer, 4: light emitting layer, 5 (51, 5)
2): lower insulating layer, 6: lower electrode (transparent electrode) such as ITO, 7: glass substrate.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 三上 明義 大阪府大阪市阿倍野区長池町22番22号シャ ープ株式会社内 (72)発明者 寺田 幸祐 大阪府大阪市阿倍野区長池町22番22号シャ ープ株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Akiyoshi Mikami 22-22 Nagaike-cho, Abeno-ku, Osaka-shi, Osaka Within Sharp Corporation (72) Inventor Kosuke Terada 22-22 Nagaike-cho, Abeno-ku, Osaka-shi, Osaka Sharp Corporation
Claims (5)
素をそれぞれ示し、ｘとｙは整数であるが、ｘとｙは等
しくない］で表されるアルカリ土類チオガレートからな
ることを特徴とする薄膜エレクトロルミネッセンス材
料。1. The composition formula is as follows; [Wherein M represents Sr or Ba, RE represents a lanthanoid element, x and y are integers, but x and y are not equal to each other], and a thin film comprising an alkaline earth thiogallate. Electroluminescent material.
請求項１に記載の薄膜エレクトロルミネッセンス材料。2. The thin film electroluminescent material according to claim 1, wherein the composition formula is BaGa 4 S 7 : Ce.
る請求項１に記載の薄膜エレクトロルミネッセンス材
料。3. The thin film electroluminescent material according to claim 1, wherein the composition formula is Ba 3 Ga 2 S 6 : Ce.
る請求項１に記載の薄膜エレクトロルミネッセンス材
料。4. The thin film electroluminescent material according to claim 1, wherein the composition formula is Sr 2 Ga 2 S 5 : Ce.
ミネッセンス材料を発光層に用いた薄膜エレクトロルミ
ネッセンス素子。5. A thin film electroluminescent device using the thin film electroluminescent material according to claim 1 for a light emitting layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6058362A JPH07242869A (en) | 1994-03-04 | 1994-03-04 | Thin-film electroluminescence element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6058362A JPH07242869A (en) | 1994-03-04 | 1994-03-04 | Thin-film electroluminescence element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07242869A true JPH07242869A (en) | 1995-09-19 |
Family
ID=13082215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6058362A Pending JPH07242869A (en) | 1994-03-04 | 1994-03-04 | Thin-film electroluminescence element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07242869A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996015648A1 (en) * | 1994-11-14 | 1996-05-23 | Mitsui Mining & Smelting Co., Ltd. | Thin-film electroluminescent element |
| FR2755122A1 (en) * | 1996-10-31 | 1998-04-30 | Rhodia Chimie Sa | COMPOUND BASED ON AN ALKALINE EARTH, SULFUR AND ALUMINUM, GALLIUM OR INDIUM, METHOD FOR PREPARING SAME AND USE THEREOF AS LUMINOPHORE |
| WO2003081957A1 (en) * | 2002-03-27 | 2003-10-02 | Ifire Technology Inc. | Yttrium substituted barium thioaluminate phosphor materials |
| KR100430565B1 (en) * | 2001-05-31 | 2004-05-10 | 한국전자통신연구원 | Phosphor including aluminium sulfide and the preparation thereof |
| US9196800B2 (en) | 1996-06-26 | 2015-11-24 | Osram Gmbh | Light-radiating semiconductor component with a luminescence conversion element |
| JP2017088719A (en) * | 2015-11-09 | 2017-05-25 | 堺化学工業株式会社 | Red phosphor |
| WO2022209033A1 (en) * | 2021-03-30 | 2022-10-06 | 三井金属鉱業株式会社 | Phosphor, method for producing same, light emitting element containing phosphor, and light emitting device |
-
1994
- 1994-03-04 JP JP6058362A patent/JPH07242869A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996015648A1 (en) * | 1994-11-14 | 1996-05-23 | Mitsui Mining & Smelting Co., Ltd. | Thin-film electroluminescent element |
| US9196800B2 (en) | 1996-06-26 | 2015-11-24 | Osram Gmbh | Light-radiating semiconductor component with a luminescence conversion element |
| FR2755122A1 (en) * | 1996-10-31 | 1998-04-30 | Rhodia Chimie Sa | COMPOUND BASED ON AN ALKALINE EARTH, SULFUR AND ALUMINUM, GALLIUM OR INDIUM, METHOD FOR PREPARING SAME AND USE THEREOF AS LUMINOPHORE |
| WO1998018721A1 (en) * | 1996-10-31 | 1998-05-07 | Rhodia Chimie | Compound with base of an alkaline-earth, sulphur and aluminium, gallium or indium, method of preparing same and use as luminophore |
| US6180073B1 (en) * | 1996-10-31 | 2001-01-30 | Rhodia Chimie | Compound with base of an alkaline-earth, sulphur and aluminium, gallium or indium, method of preparing same and use as luminophore |
| KR100355729B1 (en) * | 1996-10-31 | 2002-10-19 | 로디아 쉬미 | Compound with Base of an Alkaline-Earth, Sulphur and Aluminium, Gallium or Indium, Method of Preparing Same and Use as Luminophore |
| KR100430565B1 (en) * | 2001-05-31 | 2004-05-10 | 한국전자통신연구원 | Phosphor including aluminium sulfide and the preparation thereof |
| WO2003081957A1 (en) * | 2002-03-27 | 2003-10-02 | Ifire Technology Inc. | Yttrium substituted barium thioaluminate phosphor materials |
| JP2017088719A (en) * | 2015-11-09 | 2017-05-25 | 堺化学工業株式会社 | Red phosphor |
| WO2022209033A1 (en) * | 2021-03-30 | 2022-10-06 | 三井金属鉱業株式会社 | Phosphor, method for producing same, light emitting element containing phosphor, and light emitting device |
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