JPH0724272B2 - Method for manufacturing semiconductor device having light transmitting window - Google Patents
Method for manufacturing semiconductor device having light transmitting windowInfo
- Publication number
- JPH0724272B2 JPH0724272B2 JP11609787A JP11609787A JPH0724272B2 JP H0724272 B2 JPH0724272 B2 JP H0724272B2 JP 11609787 A JP11609787 A JP 11609787A JP 11609787 A JP11609787 A JP 11609787A JP H0724272 B2 JPH0724272 B2 JP H0724272B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- mold
- window
- semiconductor device
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、光学的な半導体を封止する際に光特性を損
なうことなく封止する光透過用窓を有する半導体装置の
製造方法に関するものである。Description: TECHNICAL FIELD The present invention relates to a method for manufacturing a semiconductor device having a light-transmitting window that seals an optical semiconductor without impairing its optical characteristics. Is.
この明細書においては光透過用窓を有する半導体装置と
して固体撮像素子を例に説明する。In this specification, a solid-state imaging device will be described as an example of a semiconductor device having a light transmitting window.
第６図は従来のセラミックで封止された固体撮像素子の
断面図で、１はチップ６を収納するセラミックベース、
２はセラミックフタ、３はリードフレーム４を接着する
低融点ガラス、５はチップ６を固定する導電性接着材、
７はリードフレーム４とチップ６の端子とを接続するボ
ンディングワイヤ、８は金属キャップ、９は低融点ガラ
ス、10は光透過用ガラス、11はセラミックフタ２の開口
部にメタライズされた金属、12は空間である。FIG. 6 is a cross-sectional view of a conventional solid-state imaging device sealed with ceramics, 1 is a ceramic base for housing a chip 6,
2 is a ceramic lid, 3 is low-melting glass that adheres the lead frame 4, 5 is a conductive adhesive that fixes the chip 6,
7 is a bonding wire for connecting the lead frame 4 and the terminal of the chip 6, 8 is a metal cap, 9 is a low-melting glass, 10 is a glass for transmitting light, 11 is a metal metalized in the opening of the ceramic lid 2, 12 Is a space.
次にその製造方法について説明する。最初にセラミック
ベース１とセラミックフタ２に、低融点ガラス３を塗布
する。次にセラミックベース１とセラミックフタ２とで
リードフレーム42をはさむ様にして、低融点ガラス３を
約500℃で融解固着する。冷却後、セラミックベース１
内に導電性接着材５でチップ６を固定する。次にチップ
６の端子とリードフレーム４とを電気的に接続するため
にボンディングワイヤ７を配線する。次に金属キャップ
８に低融点ガラス９で光透過用のガラス10を接着したも
のを、セラミックフタ２の開口部にメタライズされた金
属11上にかぶせる様にして溶接によって封止し、空間12
を外気と完全に遮断する。Next, the manufacturing method will be described. First, the low melting point glass 3 is applied to the ceramic base 1 and the ceramic lid 2. Next, the lead frame 42 is sandwiched between the ceramic base 1 and the ceramic lid 2, and the low melting point glass 3 is melted and fixed at about 500.degree. After cooling, ceramic base 1
The chip 6 is fixed therein with a conductive adhesive material 5. Next, a bonding wire 7 is wired to electrically connect the terminal of the chip 6 and the lead frame 4. Next, the metal cap 8 to which the glass 10 for light transmission is adhered with the low melting point glass 9 is sealed by welding so as to cover the metal 11 metalized in the opening of the ceramic lid 2 by welding, and the space 12
Completely shut off the outside air.
従来の固体撮像素子等の光透過用窓を有する半導体装置
の製造方法は、装置の構成材料としてセラミックと金属
とを主体に用いているため、低融点ガラス３を融解固着
する工程及び金属キャップ８に低融点ガラス９で光透過
用のガラス10を接着する工程が必要で、製造工程が複雑
であり量産性に問題があった。さらには、チップ６の耐
熱性が劣ることから金属キャップ８をメタライズ金属11
上に溶接する際の熱の影響を少なくするため、金属キャ
ップ８の寸法を大きくする必要があり、封止形状が大き
くなる欠点があった。In the conventional method for manufacturing a semiconductor device having a light-transmitting window such as a solid-state image sensor, ceramic and metal are mainly used as the constituent materials of the device, so that the step of melting and fixing the low-melting glass 3 and the metal cap 8 are performed. In addition, a process for adhering the light-transmitting glass 10 with the low-melting glass 9 is required, and the manufacturing process is complicated and there is a problem in mass productivity. Furthermore, since the heat resistance of the chip 6 is inferior, the metal cap 8 is formed on the metallized metal 11
In order to reduce the influence of heat when welding the upper part, it is necessary to increase the size of the metal cap 8 and there is a drawback that the sealing shape becomes large.
この発明は上記のような問題点を解決するためになされ
たもので、量産性に優れ、さらに封止形状の小さい樹脂
封止型固体撮像素子等の半導体装置を製造できる光透過
用窓を有する半導体装置の製造方法を得ることを目的と
する。The present invention has been made to solve the above problems, and has a light transmission window that is excellent in mass productivity and that can manufacture a semiconductor device such as a resin-encapsulated solid-state imaging device having a small encapsulation shape. An object is to obtain a method for manufacturing a semiconductor device.
この発明に係る光透過用窓を有する半導体装置の製造方
法は、チップ表面の画素の外周面，光透過用窓材のいず
れか一方に上記画素を取り囲み得る壁を付着させる工
程、上記壁を介して上記チップと上記光透過用窓材の間
に閉空間を形成するように上記チップと上記光透過用窓
材を金型に納める工程、上記金型内に樹脂を充填して硬
化させて光透過用窓を除いて樹脂封止する工程を施すも
のである。A method of manufacturing a semiconductor device having a light-transmitting window according to the present invention comprises a step of attaching a wall capable of surrounding the pixel to one of an outer peripheral surface of the pixel on the chip surface and a light-transmitting window material, A step of placing the chip and the light-transmitting window material in a mold so as to form a closed space between the chip and the light-transmitting window material. The resin sealing step is performed except for the transmission window.
この発明においては、チップ表面の画素の外周面，光透
過用窓材のいずれか一方に上記画素を取り囲むような壁
を付着し、上記壁を介して上記チップと上記窓材の間に
閉空間を形成するように上記三者を金型に納め、光透過
用窓材を除いて樹脂で封止することにより、チップ表面
の画素への樹脂の流れ込みを壁によって防ぐことがで
き、光特性を損なうことなく装置が小型化でき、量産性
が向上する。In the present invention, a wall surrounding the pixel is attached to one of the outer peripheral surface of the pixel on the chip surface and the light transmitting window material, and a closed space is provided between the chip and the window material through the wall. By putting the above three into a mold so as to form, and sealing with a resin excluding the light-transmitting window material, the resin can be prevented from flowing into the pixels on the chip surface by the wall, and the optical characteristics can be improved. The device can be miniaturized without damage, and mass productivity is improved.
以下、この発明の一実施例を第１図〜第３図に基いて工
程順に説明する。第１図はチップ表面の画素の外周面に
シリコンゴムの壁を作成付着した状態を示す上面図で、
６は長方形のチップ、15はチップ６を固定するダイパッ
ド、13はチップ６表面の画素、14は壁で、この場合は角
形のシリコンゴムの壁、16はダイパッド15の周囲に細線
を有するリードフレーム（なお各細線は周囲で接続され
ているが、省略してある）、７はチップ６とリードフレ
ーム16とを接続するためのボンディングワイヤである。An embodiment of the present invention will be described below in the order of steps based on FIGS. 1 to 3. FIG. 1 is a top view showing a state in which a silicon rubber wall is formed and attached to the outer peripheral surface of the pixel on the surface of the chip,
6 is a rectangular chip, 15 is a die pad for fixing the chip 6, 13 is a pixel on the surface of the chip 6, 14 is a wall, in this case, a rectangular silicon rubber wall, 16 is a lead frame having a thin wire around the die pad 15. (Note that each thin wire is connected to the periphery, but is omitted.) 7 is a bonding wire for connecting the chip 6 and the lead frame 16.
第２図はチップ６上に壁14を介して光透過用窓材を位置
決めした状態を示す断面図で、17はフロリナート、10は
光透過用窓材、この場合はガラスである。FIG. 2 is a cross-sectional view showing a state in which the light transmitting window material is positioned on the chip 6 through the wall 14, and 17 is Fluorinert, 10 is the light transmitting window material, and glass in this case.
第３図は金型内で樹脂を封止した状態を示す断面図で、
18は第１金型、この場合は下型、19は第２金型、この場
合は上型、金型はこの下型18及び上型19で構成される。
20はモールド樹脂、この場合はエポキシ樹脂である。FIG. 3 is a cross-sectional view showing a state where resin is sealed in the mold,
18 is a first die, a lower die in this case, 19 is a second die, in this case an upper die, and the die is composed of the lower die 18 and the upper die 19.
20 is a mold resin, in this case an epoxy resin.
次にその製造方法について説明する。最初に第１図に示
す様にチップ６の表面の画素13の外周面に画素13を取り
囲むようにスクリーン印刷により高さ20μｍ、幅150μ
ｍの角形のシリコンゴムの壁14を作成する。次にチップ
６をダイパッド15上に半田を用いて接着し、チップ６の
端子とリードフレーム16とを電気的に接続するためのボ
ンディングワイヤ７を配線する。Next, the manufacturing method will be described. First, as shown in FIG. 1, a height of 20 μm and a width of 150 μ are screen-printed so as to surround the pixels 13 on the outer peripheral surface of the pixels 13 on the surface of the chip 6.
Create a square silicone rubber wall 14 of m. Next, the chip 6 is bonded onto the die pad 15 using solder, and a bonding wire 7 for electrically connecting the terminal of the chip 6 and the lead frame 16 is wired.
次に第２図に示す様にチップ６表面に不活性液体（フロ
リナート）17を滴下し、ボンディングワイヤ７の内側に
光透過用のガラス10を配置する。光透過用のガラス10は
フロリナート17によって付着（仮止め）され、チップ６
から移動しにくくなっている。Next, as shown in FIG. 2, an inert liquid (fluorinate) 17 is dropped on the surface of the chip 6, and a glass 10 for transmitting light is placed inside the bonding wire 7. The glass 10 for transmitting light is attached (temporarily fixed) by the Fluorinert 17, and the chip 6 is attached.
It is difficult to move from.
このように構成したものを第３図に示す様に下形18に納
め金形の熱によってフロリナート17を蒸発させ、チップ
６と光透過用のガラス10との間に閉空間12を作成する。
次に上型19をしめ、光透過用のガラス10とシリコンゴム
の壁14とを、上型19をしめた時のダイパッド沈め反力に
よって密着させる。次にトランスファ成形によって樹脂
20をモールドする。チップ６の表面への樹脂の流れ込み
はシリコンゴムの壁14によって防止する。また、上型19
のガラス10と接触する部分は２μｍ以下、望ましくは、
１μｍ以下の面粗度を有する鏡面となっているので、上
型19とガラス10界面への樹脂の流れ込みを防止する。As shown in FIG. 3, the thus constructed structure is housed in the lower shape 18 to evaporate the Fluorinert 17 by the heat of the metal mold to form the closed space 12 between the chip 6 and the light transmitting glass 10.
Next, the upper mold 19 is closed, and the glass 10 for light transmission and the silicon rubber wall 14 are brought into close contact with each other by the die pad sinking reaction force when the upper mold 19 is closed. Next, transfer molding resin
Mold 20. The resin 14 is prevented from flowing into the surface of the chip 6 by the silicon rubber wall 14. Also, the upper mold 19
The portion of the glass 10 that contacts the glass 10 is 2 μm or less, preferably
Since the surface is a mirror surface having a surface roughness of 1 μm or less, the resin is prevented from flowing into the interface between the upper mold 19 and the glass 10.
このようにして作製された固体撮像素子は、光の透過を
阻害することなく従来のものと比較して空間が1/3,重量
が1/5となり、小型化する。また、モールド材料として
樹脂を用いているので量産性に優れている。The solid-state image sensor manufactured in this manner has a space of 1/3 and a weight of 1/5 as compared with the conventional solid-state image sensor without obstructing the transmission of light, thus being downsized. Further, since resin is used as the molding material, it is excellent in mass productivity.
第４図はこの発明の他の実施例に係る金型内で樹脂を封
止した状態を示す断面図で、18aは第１金型で、この場
合は上型、19aは第２金型で、この場合は下型で、第１
金型18aは第２金型19a又は第３図の第１金型18より凹部
（樹脂封入部分）が浅くなっている。21は第２金型19a
に設けられたノックアウトピンで、その断面はガラス10
と同形状をしている。この他の実施例の場合はノックア
ウトピン21を第２金型19a底面よりわずか余分に下げて
底面に凹部を形成し、この凹部にガラス10をセットして
ガラス10を位置決めする。次に壁14を作成したチップ６
を壁14を介してガラス10に配置し、第１金型18aを第２
金型19aに重ね合わせて、樹脂をモールドする。なお、
樹脂モールド時にはノックアウトピン21は第２金型19a
底面と同一面に戻しておく。この様にすることにより、
ガラス10の金型への位置決めが容易に行なえる。また、
第３図の実施例の場合、樹脂封止後、金型より取り出し
た樹脂内部に熱応力等によるストレスがたまり、窓面周
辺の樹脂20がたれるような変形が起こる場合がある。と
ころが、この第４図の実施例では第１金型18aの凹部を
第２金型19aより浅くしてダイパッド15のチップ６載置
面の裏側のモールド樹脂20の厚みを減らして上下の厚み
バランスをとっている。従って、樹脂20モールド内にた
まるストレスを緩和することができ、変形を防止でき
る。FIG. 4 is a sectional view showing a state in which resin is sealed in a mold according to another embodiment of the present invention. 18a is a first mold, in this case, an upper mold, and 19a is a second mold. , In this case the lower mold, the first
The mold 18a has a shallower recess (resin-filled portion) than the second mold 19a or the first mold 18 shown in FIG. 21 is the second mold 19a
It is a knockout pin provided on the
It has the same shape as. In the case of another embodiment, the knockout pin 21 is slightly lowered from the bottom surface of the second mold 19a to form a concave portion on the bottom surface, and the glass 10 is set in this concave portion to position the glass 10. Next, the chip 6 that created the wall 14
Is placed on the glass 10 through the wall 14 and the first mold 18a is
The resin is molded by superimposing it on the mold 19a. In addition,
The knockout pin 21 is the second mold 19a during resin molding.
Put it back on the same plane as the bottom. By doing this,
The glass 10 can be easily positioned in the mold. Also,
In the case of the embodiment shown in FIG. 3, after the resin is sealed, stress due to thermal stress or the like may accumulate inside the resin taken out from the mold, and the resin 20 around the window surface may be deformed. However, in the embodiment of FIG. 4, the recess of the first mold 18a is made shallower than that of the second mold 19a to reduce the thickness of the mold resin 20 on the back side of the die 6 mounting surface of the chip 6 to balance the vertical thickness. Is taking. Therefore, the stress accumulated in the resin 20 mold can be relieved and deformation can be prevented.
第５図はこの発明のさらに他の実施例に係る金型内で樹
脂を封止した状態を示す断面図で、19bは第２金型で、
この場合は上型で、吸引貫通孔22が設けられている。10
aは光透過用窓材のガラス10と同じガラスで、変形防止
のためチップ６ガラス10等と一緒に樹脂でモールドされ
る。この実施例では、下型18底部にガラス10aを載置
し、この下型18に、壁14を形成しリードフレーム16にダ
イボンディングしたチップ６を載置する。次に吸引貫通
孔22によりガラス10を真空吸引してガラス10を上型19b
にくっつけておき、この上型19bと下型18を重ね合わせ
る時に、チップ６とガラス10を位置合わせする。従って
容易に位置決めできる。また、窓材10と同じガラス10a
を下部に入れており、樹脂モールド内にたまるストレス
を緩和できるので、変形を防止できる。FIG. 5 is a sectional view showing a state where resin is sealed in a mold according to still another embodiment of the present invention, and 19b is a second mold,
In this case, the upper die is provided with a suction through hole 22. Ten
a is the same glass as the glass 10 of the light transmitting window material, and is molded with resin together with the chip 6 glass 10 and the like to prevent deformation. In this embodiment, the glass 10a is placed on the bottom of the lower mold 18, and the chip 6 having the wall 14 formed and die-bonded to the lead frame 16 is placed on the lower mold 18. Next, the glass 10 is vacuum-sucked by the suction through-hole 22 so that the glass 10 is held in the upper mold 19b.
When the upper mold 19b and the lower mold 18 are superposed on each other, the chip 6 and the glass 10 are aligned with each other. Therefore, it can be easily positioned. Also, the same glass 10a as the window material 10
Since it is put in the lower part, the stress accumulated in the resin mold can be relieved, so that the deformation can be prevented.
なお、上記実施例ではチップ６の表面の画素13の外周面
にスクリーン印刷によってシリコンゴムの壁14を作成し
付着したが、必ずしもこれに限られるものではなく、壁
材として例えばPIQ（商品名，日立化成社製）、Ｕワニ
ス（商品名，宇部興産製）、トレニース（商品名，東レ
製）、のようなポリイミド樹脂、ポリフェニルキノキサ
リン樹脂あるいは低融点ガラスのような無機材料が用い
られる。また壁の作成方法は他に、スピンコート、レジ
スト法、蒸着等がある。また、画素13を取り囲み得るよ
うな、例えば角形の枠を単独で形成し、独立した壁とし
この枠状の壁を、チップ６表面の画素13外周面に付着す
るようにしても良い。さらにまた、壁14はチップ６表面
に付着させなくても、光透過用窓材の例えばガラス10に
作成，付着させるようにしても良い。なお、壁14の高さ
としては、チップ６と光透過用窓材10が接触しない程度
の空間12があれば良く、１μｍ〜50μｍ程度が望まし
い。また壁の幅は樹脂封入時に空間12への樹脂の侵入を
防止する強度を必要とし、例えば150μｍ程度が望まし
い。Although the silicon rubber wall 14 is formed and attached by screen printing on the outer peripheral surface of the pixel 13 on the surface of the chip 6 in the above embodiment, the wall material is not necessarily limited to this, and the wall material may be, for example, PIQ (trade name, An inorganic material such as a polyimide resin such as Hitachi Chemical Co., Ltd.), U Varnish (trade name, manufactured by Ube Industries), Treney (trade name, manufactured by Toray), a polyphenylquinoxaline resin, or a low melting point glass is used. Other methods for forming the wall include spin coating, resist method, vapor deposition and the like. Alternatively, for example, a rectangular frame that can surround the pixel 13 may be formed independently, and an independent wall may be attached to the outer peripheral surface of the pixel 13 on the surface of the chip 6. Furthermore, the wall 14 need not be attached to the surface of the chip 6, but may be formed and attached to the light transmitting window material such as glass 10. The height of the wall 14 should be a space 12 where the chip 6 and the light transmitting window material 10 do not come into contact with each other, and a height of 1 μm to 50 μm is desirable. Further, the width of the wall needs strength to prevent the resin from entering the space 12 when the resin is filled, and is preferably about 150 μm, for example.
また上記実施例では金型外で、壁14を作成したチップ６
に窓材10を例えば接着剤で仮止めして配置し、組立品を
金型に入れて樹脂封止する場合を、他の実施例では壁14
を作成したチップ６と窓材を金型内で配置し、樹脂封止
する場合について述べたが、窓材10に壁14が付着されて
いても、三者とも金型内で配置しても良い。さらに、壁
材として、例えば低融点ガラスのような無機材料，接着
材として例えばエポキシ樹脂系接着剤のNF1000-6R（商
品名，ソマール工業製），＃360（商品名，ロックタイ
ト製）を用いれば、よりハーメチックになり空間12への
水分の侵入を防止する効果が大きい。Further, in the above embodiment, the chip 6 having the wall 14 formed outside the mold
In the case where the window member 10 is temporarily fixed with an adhesive, for example, and the assembly is put into a mold and resin-sealed, the wall 14 is provided in another embodiment.
Although the case where the chip 6 and the window material having been prepared above are placed in a mold and resin-sealed has been described, even if the wall 14 is attached to the window material 10 or all three members are placed in the mold. good. Furthermore, if an inorganic material such as low melting point glass is used as the wall material, and an epoxy resin adhesive such as NF1000-6R (trade name, manufactured by Somar Industries), # 360 (trade name, manufactured by Loctite) is used as the adhesive material. , Which is more hermetic and has a large effect of preventing the intrusion of water into the space 12.
また、上記実施例では、第２金型19の窓材のガラス10と
接触する部分は１μｍ以下の面粗度を有する鏡面とした
が、ガラス10と金型界面への樹脂注入を防止できるよう
な鏡面であれば良く、５μｍ以下の面粗度で良いが、よ
り望ましくは１μｍ以下が良い。Further, in the above embodiment, the portion of the window material of the second mold 19 that comes into contact with the glass 10 is a mirror surface having a surface roughness of 1 μm or less, but it is possible to prevent resin injection into the interface between the glass 10 and the mold. The surface roughness may be 5 μm or less, more preferably 1 μm or less.
また、変形防止手段として、上記実施例の他にダイパッ
ド15のチップ６載置面の裏側のモールド樹脂外面にへこ
み（凹部）を設けても良い。Further, as the deformation preventing means, a dent (recess) may be provided on the outer surface of the mold resin on the back side of the die 6 mounting surface of the die pad 15 in addition to the above embodiment.
また、上記実施例では光透過用の窓材としてガラスを用
いたが、必ずしもこれに限られるものではなく、例えば
熱可塑性または熱硬化性の透明樹脂を用いても良い。Further, although glass is used as the window material for transmitting light in the above-mentioned embodiments, it is not necessarily limited to this, and for example, a thermoplastic or thermosetting transparent resin may be used.
さらに、上記実施例では固体撮像素子について説明した
が、紫外線消去形読み出し専用メモリー（EPROM）につ
いても同様に適用できる。EPROMの場合は紫外線透過用
ガラスとして例えば石英ガラス、ホウケイ酸ガラスを用
いれば、後の工程は固体撮像素子と同じ方法でできる。Further, although the solid-state image pickup device has been described in the above embodiment, the same can be applied to an ultraviolet erasable read-only memory (EPROM). In the case of EPROM, if quartz glass or borosilicate glass is used as the ultraviolet ray transmitting glass, the subsequent steps can be performed by the same method as the solid-state image sensor.
以上のように、この発明によれば、チップ表面の画素の
外周面、光透過用窓材のいずれか一方に上記画素を取り
囲み得る壁を付着させる工程、上記壁を介して上記チッ
プと上記光透過用窓材の間に閉空間を形成するように、
上記チップと上記光透過用窓材を金型に納める工程、及
び上記金型内に樹脂を充填し硬化させて光透過用窓を除
いて樹脂封止する工程を施すことにより、光の透過を阻
害する要因がなく性能の優れた小形化した光透過用窓を
有する半導体装置を得ることができ、またその量産性に
も優れている。As described above, according to the present invention, the step of attaching a wall that can surround the pixel to one of the outer peripheral surface of the pixel on the chip surface and the light transmitting window material, the chip and the light through the wall. To form a closed space between the transparent window materials,
The step of putting the chip and the light-transmitting window material in a mold, and the step of filling the mold with a resin and curing the resin to seal the resin except the light-transmitting window are used to transmit light. It is possible to obtain a semiconductor device having a miniaturized light-transmitting window that is excellent in performance and has no obstacles, and is also excellent in mass productivity.
第１図〜第３図はこの発明の一実施例を工程順に示すも
ので、第１図はチップ表面の画素の外周面にシリコンゴ
ムの壁を作成した状態を示す上面図、第２図はチップ上
に壁を介して光透過用窓材を位置決めした状態を示す断
面図、第３図は金形内で樹脂を封止した状態を示す断面
図、第４図はこの発明の他の実施例に係る金型内で樹脂
を封止した状態を示す断面図、第５図はこの発明のさら
に他の実施例に係る金型内で樹脂を封止した状態を示す
断面図、第６図は従来のセラミックで封止された固体撮
像素子の断面図である。 図において、６はチップ、７はボンディングワイヤ、10
は光透過用窓材、12は空間、13は画素、14は壁、16はリ
ードフレーム、18,18aは第１金型、19,19a,19bは第２金
型、20はモールド樹脂、21はノックアウトピン、22は吸
引貫通孔である。 なお図中同一符号は同一又は相当部分を示す。1 to 3 show one embodiment of the present invention in the order of steps. FIG. 1 is a top view showing a state in which a silicon rubber wall is formed on the outer peripheral surface of a pixel on the chip surface, and FIG. Sectional view showing a state in which a light transmitting window member is positioned on a chip through a wall, FIG. 3 is a sectional view showing a state in which resin is sealed in a mold, and FIG. 4 is another embodiment of the present invention. FIG. 6 is a sectional view showing a state in which resin is sealed in a mold according to an example, FIG. 5 is a sectional view showing a state in which resin is sealed in a mold according to still another embodiment of the present invention, FIG. FIG. 4 is a cross-sectional view of a conventional solid-state imaging device sealed with ceramics. In the figure, 6 is a chip, 7 is a bonding wire, and 10
Is a window member for light transmission, 12 is a space, 13 is a pixel, 14 is a wall, 16 is a lead frame, 18 and 18a are first molds, 19 and 19a and 19b are second molds, 20 is mold resin, 21 Is a knockout pin, and 22 is a suction through hole. The same reference numerals in the drawings indicate the same or corresponding parts.
Claims (11)
において、チップをリードフレームにダイボンディング
する工程、上記チップ表面の画素の外周面，光透過用窓
材のいずれか一方に上記画素を取り囲み得る壁を付着さ
せる工程、上記壁を介して、上記チップと上記光透過用
窓材の間に閉空間を形成するように上記チップと上記光
透過用窓材を金型に納める工程、及び上記金型内に樹脂
を充填し硬化させて光透過用窓を除いて樹脂封止する工
程を施す光透過用窓を有する半導体装置の製造方法。1. A method of manufacturing a semiconductor device having a window for transmitting light, wherein the step of die-bonding a chip to a lead frame, the outer peripheral surface of the pixel on the surface of the chip, or the window material for transmitting light is provided with the pixel. Attaching a wall that can be surrounded, placing the chip and the light transmitting window material in a mold so as to form a closed space between the chip and the light transmitting window material through the wall, and A method of manufacturing a semiconductor device having a light-transmitting window, which comprises a step of filling a resin in the mold and curing the resin to remove the light-transmitting window and sealing the resin.
において、チップ表面の画素の外周面に上記画素を取り
囲み得る壁を作成する工程、この壁を作成後上記チップ
をリードフレームにダイボンディングする工程、上記壁
を介して上記チップと上記光透過用窓材の間に閉空間を
形成するように上記チップと上記光透過用窓材を金型に
納める工程、及び上記金型内に樹脂を充填し硬化させて
光透過用窓を除いて樹脂封止する工程を施す特許請求の
範囲第１項記載の光透過用窓を有する半導体装置の製造
方法。2. A method of manufacturing a semiconductor device having a window for transmitting light, a step of forming a wall capable of surrounding the pixel on an outer peripheral surface of the pixel on a chip surface, and after the wall is formed, the chip is die-bonded to a lead frame. The step of placing the chip and the light transmitting window material in a mold so as to form a closed space between the chip and the light transmitting window material via the wall, and a resin in the mold. The method for manufacturing a semiconductor device having a light-transmitting window according to claim 1, wherein a step of filling and curing the resin and sealing the resin except the light-transmitting window is performed.
成されている特許請求の範囲第１項又は第２項記載の光
透過用窓を有する半導体装置の製造方法。3. The method for manufacturing a semiconductor device having a window for light transmission according to claim 1 or 2, wherein the wall is made of silicon rubber or polyimide resin.
いずれかである特許請求の範囲第１項ないし第３項のい
ずれかに記載の光透過用窓を有する半導体装置の製造方
法。4. A method for manufacturing a semiconductor device having a light-transmitting window according to claim 1, wherein the window material is either a thermosetting or thermoplastic transparent resin. .
ないし第３項のいずれかに記載の光透過用窓を有する半
導体装置の製造方法。5. The method for manufacturing a semiconductor device having a light transmitting window according to claim 1, wherein the window material is glass.
金型に窓材を位置決めし、第1,第２金型を位置合わせし
重ねて、その重ねた金型内部に樹脂を充填するようにし
た特許請求の範囲第１項ないし第５項のいずれかに記載
の光透過用窓を有する半導体装置の製造方法。6. The chip is positioned in the first mold, and the second mold is placed.
The window material is positioned in the mold, the first and second molds are aligned and overlapped, and resin is filled inside the overlapped molds. A method of manufacturing a semiconductor device having a window for transmitting light according to claim 1.
ンを利用して行うようにした特許請求の範囲第１項ない
し第６項のいずれかに記載の光透過用窓を有する半導体
装置の製造方法。7. A semiconductor device having a light transmitting window according to claim 1, wherein a knockout pin is used to position the window member in the mold. Production method.
との接触部に設けられた吸引貫通孔を利用して行うよう
にした特許請求の範囲第１項ないし第６項のいずれかに
記載の光透過用窓を有する半導体装置の製造方法。8. The method according to claim 1, wherein the positioning of the window member with respect to the mold is carried out by utilizing a suction through hole provided in a contact portion of the mold with the window member. A method for manufacturing a semiconductor device having a light transmitting window according to any one of 1.
μｍ以下の鏡面である特許請求の範囲第１項ないし第８
項のいずれかに記載の光透過用窓を有する半導体装置の
製造方法。9. A surface roughness of the opposing surface of the mold which comes into contact with the window material is 2
Claims 1 to 8 wherein the mirror surface is less than or equal to μm.
Item 8. A method of manufacturing a semiconductor device having a light transmitting window according to any one of items.
特許請求の範囲第１項ないし第９項のいずれかに記載の
光透過用窓を有する半導体装置の製造方法。10. The method for manufacturing a semiconductor device having a window for light transmission according to claim 1, wherein the wall is formed by screen printing.
ス緩和手段が設けられている特許請求の範囲第１項ない
し第10項のいずれかに記載の光透過用窓を有する半導体
装置の製造方法。11. A method of manufacturing a semiconductor device having a light-transmitting window according to claim 1, wherein the mold is provided with stress relieving means for accumulating in a resin mold. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/102,610 US4812420A (en) | 1986-09-30 | 1987-09-30 | Method of producing a semiconductor device having a light transparent window |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61-234088 | 1986-09-30 | ||
| JP23408886 | 1986-09-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63226033A JPS63226033A (en) | 1988-09-20 |
| JPH0724272B2 true JPH0724272B2 (en) | 1995-03-15 |
Family
ID=16965428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11609787A Expired - Lifetime JPH0724272B2 (en) | 1986-09-30 | 1987-05-13 | Method for manufacturing semiconductor device having light transmitting window |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0724272B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08325806A (en) * | 1995-05-31 | 1996-12-10 | Nakamura Kutsushita Kk | Hosiery and its production |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2778817B1 (en) * | 1998-05-18 | 2000-06-30 | Remy Kirchdoerffer | METHOD FOR MANUFACTURING AN APPARATUS OR INSTRUMENT BY MOLDING AND APPARATUS OR INSTRUMENT THUS OBTAINED |
-
1987
- 1987-05-13 JP JP11609787A patent/JPH0724272B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08325806A (en) * | 1995-05-31 | 1996-12-10 | Nakamura Kutsushita Kk | Hosiery and its production |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63226033A (en) | 1988-09-20 |
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