JPH0722695A - Self-excited oscillation type semiconductor laser element - Google Patents

Self-excited oscillation type semiconductor laser element

Info

Publication number
JPH0722695A
JPH0722695A JP16192593A JP16192593A JPH0722695A JP H0722695 A JPH0722695 A JP H0722695A JP 16192593 A JP16192593 A JP 16192593A JP 16192593 A JP16192593 A JP 16192593A JP H0722695 A JPH0722695 A JP H0722695A
Authority
JP
Japan
Prior art keywords
layer
type
layers
clad
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16192593A
Other languages
Japanese (ja)
Inventor
Teruaki Miyake
輝明 三宅
Akira Ibaraki
晃 茨木
Nobuhiko Hayashi
伸彦 林
Atsushi Tajiri
敦志 田尻
Kotaro Furusawa
浩太郎 古沢
Mitsuharu Matsumoto
光晴 松本
Kenichi Matsukawa
健一 松川
Takekane Gotou
壮謙 後藤
Daisuke Ide
大輔 井手
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP16192593A priority Critical patent/JPH0722695A/en
Priority to US08/147,779 priority patent/US5416790A/en
Priority to US08/365,176 priority patent/US5506170A/en
Publication of JPH0722695A publication Critical patent/JPH0722695A/en
Priority to US08/536,370 priority patent/US5610096A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0658—Self-pulsating

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To provide a self-excited oscillation type semiconductor laser element having excellent characteristics of an operating current and divergence angle of beams in a perpendicular direction. CONSTITUTION:The self-excited oscillation type semiconductor laser element comprises an n-type GaAs substrate 1, an n-type first clad layer 6 provided on the substrate 1, an active layer 8 provided on the layer 6, and a second clad layer 13 provided on the layer 8, wherein saturable light absorption layers 4, 11 having a band gap of energy substantially equal to oscillation wavelength energy are respectively provided in the layers 6, 13. Further, the layers 6, 13 have smaller refractive indexes and larger band gaps than those of the layer 8 and barrier layers 7, 9 having smaller refractive indexes and larger band gaps than those of the layers 6, 12 are respectively provided between the layers 6 and 8 and between the layers 8 and 13.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は出力レーザ光の戻り光に
起因する雑音を低減した半導体レーザ素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device in which noise caused by returning light of output laser light is reduced.

【０００２】[0002]

【従来の技術】従来の半導体レーザ素子は、出力レーザ
光の戻り光が半導体レーザ素子へ再入射した場合、この
戻り光に起因する雑音（以下、戻り光雑音という）が出
力レーザ光内に発生するといった問題があった。斯る戻
り光雑音は、例えば半導体レーザ素子を光ディスク装置
の光源として使用する場合に、ディスク面等からの反射
された出力レーザ光の戻り光が半導体レーザ素子へ再入
射することにより発生する。2. Description of the Related Art In a conventional semiconductor laser device, when the return light of the output laser light is re-incident on the semiconductor laser device, noise caused by this return light (hereinafter referred to as return light noise) is generated in the output laser light. There was a problem of doing. Such return light noise is generated, for example, when the semiconductor laser device is used as a light source of an optical disk device, the return light of the output laser light reflected from the disk surface or the like is re-incident on the semiconductor laser device.

【０００３】この半導体レーザ素子の戻り光雑音を低減
する為に、自励発振現象を利用する方法が知られてお
り、例えば特開昭６３−２０２０８３号（Ｈ０１Ｓ ３
／１８）公報に開示されている。A method of utilizing a self-oscillation phenomenon in order to reduce the return light noise of this semiconductor laser device is known, for example, Japanese Patent Application Laid-Open No. 63-202083 (H01S 3).
/ 18).

【０００４】斯る半導体レーザ素子では、ＡｌＧａＡｓ
活性層を挟むクラッド層のうち、一方のクラッド層に発
振波長に対応するエネルギー（発振波長エネルギー：ｈ
ν）よりかなり大きなバンドギャップエネルギーを持つ
屈折率層もしくは該発振波長エネルギーよりかなり小さ
なバンドギャップエネルギーを持つ光吸収層を用いるこ
とにより、自励発振させることが記載されている。In such a semiconductor laser device, AlGaAs
The energy corresponding to the oscillation wavelength (oscillation wavelength energy: h
It is described that self-excited oscillation is caused by using a refractive index layer having a bandgap energy much larger than ν) or a light absorption layer having a bandgap energy much smaller than the oscillation wavelength energy.

【０００５】しかしながら、本願出願人の実験結果によ
ると、上記発振波長エネルギーよりかなり大きなバンド
ギャップエネルギーをもつ屈折率層の場合は、非点隔差
が大きくなり、他方発振波長エネルギーよりかなり小さ
なバンドギャップエネルギーを持つ光吸収層の場合は、
動作電流が大きくなるといったことが判った。このよう
に非点隔差が大きいと、出力されたビーム（レーザ光）
は絞ることが困難であるので、光ディスク装置等の光源
として用いた場合にはクロストークのＳＮ比が悪くな
り、また動作電流が大きいと、消費電力が大きくなる。However, according to the experimental results of the applicant of the present application, in the case of the refractive index layer having a band gap energy much larger than the oscillation wavelength energy, the astigmatic difference becomes large, while the band gap energy much smaller than the oscillation wavelength energy. For a light absorbing layer with
It was found that the operating current was large. If the astigmatic difference is large like this, the output beam (laser light)
Since it is difficult to narrow down, the S / N ratio of crosstalk deteriorates when used as a light source for an optical disk device or the like, and power consumption increases when the operating current is large.

【０００６】この問題に対して、本願出願人は活性層を
挟む両クラッド層の層中にそれぞれ発振波長エネルギー
に略等しいエネルギーのバンドギャップを有する可飽和
光吸収層（過飽和光吸収層）を設けることにより、動作
電流値等が小さく且つ非点隔差も小さくできる自励発振
型半導体レーザ素子を特願平４−２９７１７８号で提案
した。To address this problem, the applicant of the present application provides a saturable light absorption layer (supersaturated light absorption layer) having a band gap of energy approximately equal to the oscillation wavelength energy in both clad layers sandwiching the active layer. As a result, Japanese Patent Application No. 4-297178 proposes a self-excited oscillation type semiconductor laser device capable of reducing the operating current value and the astigmatic difference.

【０００７】[0007]

【発明が解決しようとする課題】しかしながら、上述の
ように活性層を挟む両クラッド層の層中にそれぞれ発振
波長エネルギーに略等しいエネルギーのバンドギャップ
を有する可飽和光吸収層を設けた場合にも、出力された
レーザ光（レーザビーム）の垂直方向（積層方向）のビ
ーム広がり角θを十分に小さくできない。この垂直方向
のビーム広がり角θが大きい場合には、光ディスク装置
等の中で用いられる対物レンズとの結合効率が小さくな
るため、レーザ出力を大きくする必要があり、この結果
消費電力が大きくなる。However, even when the saturable light absorption layer having a band gap of energy approximately equal to the oscillation wavelength energy is provided in each of the clad layers sandwiching the active layer as described above. The beam divergence angle θ of the output laser light (laser beam) in the vertical direction (stacking direction) cannot be made sufficiently small. When the beam divergence angle θ in the vertical direction is large, the coupling efficiency with the objective lens used in the optical disk device or the like becomes small, so that it is necessary to increase the laser output, resulting in a large power consumption.

【０００８】この垂直のビーム広がり角θを小さくする
ために、クラッド層と活性層の屈折率差を小さくすれば
よいが、このようにこの屈折率差を小さくする場合に
は、クラッド層と活性層のバンドギャップ差が小さくな
り、動作電流が大きくなるといった問題があった。In order to reduce the vertical beam divergence angle θ, the difference in the refractive index between the clad layer and the active layer may be reduced. However, in the case where the difference in the refractive index is reduced in this way, the clad layer and the active layer are activated. There is a problem that the band gap difference between layers becomes small and the operating current becomes large.

【０００９】本発明は斯る問題点を鑑みて成されたもの
であり、動作電流及び垂直方向のビーム広がり角の特性
が良好な自励発振型半導体レーザ素子を提供することを
目的とする。The present invention has been made in view of the above problems, and an object of the present invention is to provide a self-pulsation type semiconductor laser device having excellent characteristics of operating current and vertical beam divergence angle.

【００１０】[0010]

【課題を解決するための手段】本発明の自励発振型半導
体レーザ素子は、第１導電型の半導体基板と、該半導体
基板上に設けた第１導電型の第１クラッド層と、該第１
クラッド層上に設けた活性層と、該活性層上に設けた第
２導電型の第２クラッド層とを備え、前記第１、第２ク
ラッド層は前記活性層より小さい屈折率及び大きいバン
ドギャップを有し、且つ前記第１、第２クラッド層の層
中にそれぞれ発振波長エネルギーに略等しいエネルギー
のバンドギャップを有する可飽和光吸収層を設け、且つ
前記第１クラッド層と前記活性層の間又は前記活性層と
前記第２クラッド層の間の少なくとも一方に該第１クラ
ッド層及び該第２クラッド層より小さい屈折率及び大き
なバンドギャップを有する障壁層を設けたことを特徴と
する。A self-excited oscillation type semiconductor laser device of the present invention comprises a first conductivity type semiconductor substrate, a first conductivity type first cladding layer provided on the semiconductor substrate, and 1
An active layer provided on the clad layer, and a second conductive type second clad layer provided on the active layer, wherein the first and second clad layers have a refractive index smaller than that of the active layer and a large band gap. And a saturable light absorption layer having a band gap of energy substantially equal to the oscillation wavelength energy is provided in each of the first and second cladding layers, and between the first cladding layer and the active layer. Alternatively, at least one of the active layer and the second cladding layer is provided with a barrier layer having a refractive index smaller than that of the first cladding layer and the second cladding layer and having a larger bandgap.

【００１１】[0011]

【作用】本発明の自励発振型半導体レーザ素子では、第
１導電型の半導体基板と、該半導体基板上に設けた第１
導電型の第１クラッド層と、該第１クラッド層上に設け
た活性層と、該活性層上に設けた第２導電型の第２クラ
ッド層とを備え、前記第１、第２クラッド層は前記活性
層より小さい屈折率及び大きいバンドギャップを有し、
且つ前記第１、第２クラッド層の層中にそれぞれ発振波
長エネルギーに略等しいエネルギーのバンドギャップを
有する可飽和光吸収層を設け、且つ前記第１クラッド層
と前記活性層の間又は前記活性層と前記第２クラッド層
の間の少なくとも一方に該第１クラッド層及び該第２ク
ラッド層より小さい屈折率及び大きなバンドギャップを
有する障壁層を設けたので、レーザ光の垂直方向の広が
り角及び動作電流特性が良好になる。In the self-excited oscillation type semiconductor laser device of the present invention, the first conductivity type semiconductor substrate and the first semiconductor substrate provided on the semiconductor substrate are provided.
A first clad layer of conductivity type; an active layer provided on the first clad layer; and a second clad layer of second conductivity type provided on the active layer, wherein the first and second clad layers are provided. Has a smaller refractive index and a larger bandgap than the active layer,
A saturable light absorption layer having a band gap having an energy substantially equal to the oscillation wavelength energy is provided in each of the first and second cladding layers, and the saturable light absorption layer is provided between the first cladding layer and the active layer or the active layer. A barrier layer having a refractive index and a larger bandgap smaller than that of the first cladding layer and the second cladding layer is provided on at least one of the first cladding layer and the second cladding layer. Good current characteristics.

【００１２】[0012]

【実施例】本発明に係る一実施例を図面を参照しつつ詳
細に説明する。図１は本実施例のＡｌＧａＡｓ系自励発
振型半導体レーザ素子の断面構造を示す模式図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment according to the present invention will be described in detail with reference to the drawings. FIG. 1 is a schematic diagram showing a cross-sectional structure of an AlGaAs self-pulsation type semiconductor laser device of this embodiment.

【００１３】図中、１はｎ型ＧａＡｓ半導体基板であ
り、このｎ型ＧａＡｓ半導体基板１上には、ｎ型ＧａＡ
ｓバッファ層（典型的には、層厚０．５μｍ）２、ｎ型
ＡｌxaＧａ1-xaＡｓクラッド層（典型的には、層厚１．
５μｍ、組成比ｘａ＝０．５）３、ｎ型ＡｌuaＧａ1-ua
Ａｓ第１可飽和光吸収層（ｕａ＜ｘａ，ｘｂ，ｚａ，ｚ
ｂ：典型的には、層厚０．０３μｍ、組成比ｕａ＝０．
１３）４、ｎ型ＡｌxbＧａ1-xbＡｓクラッド層（典型的
には層厚０．２μｍ、組成ｘｂ＝０．５）５がこの順序
で形成されており、該クラッド層３、５によりｎ型第１
クラッド層６が構成されている。即ち、第１クラッド層
６中にｎ型第１可飽和光吸収層４が設けられている。In the figure, 1 is an n-type GaAs semiconductor substrate, and on this n-type GaAs semiconductor substrate 1, n-type GaA is provided.
s buffer layer (typically, layer thickness 0.5 μm) 2, n-type Al xa Ga 1 -xa As clad layer (typically, layer thickness 1.
5 μm, composition ratio xa = 0.5) 3, n-type Al ua Ga 1-ua
As first saturable light absorbing layer (ua <xa, xb, za, z
b: Typically, the layer thickness is 0.03 μm and the composition ratio ua = 0.
13) 4, an n-type Al xb Ga 1-xb As clad layer (typically, layer thickness 0.2 μm, composition xb = 0.5) 5 is formed in this order. n-type first
The clad layer 6 is formed. That is, the n-type first saturable light absorption layer 4 is provided in the first cladding layer 6.

【００１４】前記クラッド層５上には、ｎ型ＡｌyaＧａ
1-yaＡｓ第１障壁層（ｙａ＞ｘａ，ｘｂ，ｚａ，ｚｂ：
典型的には、層厚０．１μｍ、組成比ｙａ＝０．５５）
７、アンドープのＡｌqＧａ1-qＡｓ活性層（ｑ＜ｘａ，
ｘｂ，ｚａ，ｚｂ：典型的には、層厚０．０８μｍ、組
成比ｑ＝０．１３）８、及びｐ型ＡｌybＧａ1-ybＡｓ第
２障壁層（ｙｂ＞ｘａ，ｘｂ，ｚａ，ｚｂ：典型的に
は、層厚０．１μｍ、組成比ｙｂ＝０．５５）９がこの
順序で形成されている。On the clad layer 5, n-type Al ya Ga is formed.
1-ya As first barrier layer (ya> xa, xb, za, zb:
(Typically, the layer thickness is 0.1 μm, and the composition ratio is ya = 0.55)
7. Undoped Al q Ga 1-q As active layer (q <xa,
xb, za, zb: typically, a layer thickness of 0.08 μm, a composition ratio q = 0.13) 8, and a p-type Al yb Ga 1 -yb As second barrier layer (yb> xa, xb, za, zb: Typically, a layer thickness of 0.1 μm and a composition ratio yb = 0.55) 9 are formed in this order.

【００１５】前記第２障壁層９上には、ｐ型ＡｌzaＧａ
1-zaＡｓクラッド層（典型的には、層厚０．２μｍ、組
成比ｚａ＝０．５）１０、ｐ型ＡｌubＧａ1-ubＡｓ第２
可飽和光吸収層（ｕｂ＜ｘａ，ｘｂ，ｚａ，ｚｂ：典型
的には、層厚０．０３μｍ、組成比ｕｂ＝０．１３）１
１がこの順序で形成されている。この第２可飽和光吸収
層１１中央上に共振器方向に延在するストライプ状リッ
ジ部をなすｐ型ＡｌzbＧａ1-zbＡｓクラッド層（典型的
には、層厚０．７μｍ、ストライプ下面幅Ｗが３．５μ
ｍ、組成比ｚｂ＝０．５）１２が形成されている。即
ち、前記クラッド層１０、１２によりｐ型第２クラッド
層１３が構成され、このｐ型第２クラッド層１３中に第
２可飽和光吸収層１１が設けられている。A p-type Al za Ga layer is formed on the second barrier layer 9.
1-za As clad layer (typically, layer thickness 0.2 μm, composition ratio za = 0.5) 10, p-type Al ub Ga 1-ub As second
Saturable light absorption layer (ub <xa, xb, za, zb: typically, layer thickness 0.03 μm, composition ratio ub = 0.13) 1
1 are formed in this order. A p-type Al zb Ga 1-zb As clad layer (typically, layer thickness 0.7 μm, stripe lower surface) forming a striped ridge portion extending in the cavity direction on the center of the second saturable light absorption layer 11 Width W is 3.5μ
m, composition ratio zb = 0.5) 12 is formed. That is, the p-type second clad layer 13 is constituted by the clad layers 10 and 12, and the second saturable light absorbing layer 11 is provided in the p-type second clad layer 13.

【００１６】前記クラッド層１２のそのリッジ部上面に
は、ｐ型ＧａＡｓキャップ層（典型的には、層厚０．３
μｍ）１４が形成されている。このキャップ層１４の側
面、前記クラッド層１２の側面、及び該クラッド層１２
が設けられていない第２可飽和光吸収層１１上には、ｎ
型ＧａＡｓ電流阻止層（典型的には、層厚０．８μｍ）
１５、１５が形成されている。前記キャップ層１４及び
電流阻止層１５、１５上にはｐ型ＧａＡｓコンタクト層
（典型的には、層厚６μｍ）１６が形成されている。On the upper surface of the ridge portion of the cladding layer 12, a p-type GaAs cap layer (typically, a layer thickness of 0.3) is formed.
μm) 14 is formed. The side surface of the cap layer 14, the side surface of the clad layer 12, and the clad layer 12
N is provided on the second saturable light absorbing layer 11 where n is not provided.
Type GaAs current blocking layer (typically 0.8 μm thick)
15, 15 are formed. A p-type GaAs contact layer (typically, layer thickness 6 μm) 16 is formed on the cap layer 14 and the current blocking layers 15 and 15.

【００１７】前記コンタクト層１６上にはＡｕ−Ｃｒか
らなるｐ型側オーミック電極１７、前記ｎ型ＧａＡｓ基
板１下面にはＡｕ−Ｓｎ−Ｃｒからなるｎ型側オーミッ
ク電極１８が形成されている。A p-type ohmic electrode 17 made of Au-Cr is formed on the contact layer 16, and an n-type ohmic electrode 18 made of Au-Sn-Cr is formed on the lower surface of the n-type GaAs substrate 1.

【００１８】図２（ａ）はこの自励発振型半導体レーザ
素子の活性層８近傍のエネルギーバンド構造の概略図、
図２（ｂ）は同じく活性層８近傍の屈折率を示す概略図
を示す。FIG. 2A is a schematic view of the energy band structure near the active layer 8 of this self-excited oscillation type semiconductor laser device,
FIG. 2B is a schematic view showing the refractive index in the vicinity of the active layer 8 as well.

【００１９】これら図からも判るように、第１、第２ク
ラッド層６、１３は活性層８より小さな屈折率及び大き
なバンドギャップを有している。そして活性層８を挟む
ように両側に第１、第２クラッド層６、１３より小さな
屈折率であると共に大きなバンドギャップを有し且つ活
性層８より層厚の大きい第１、第２障壁層７、９が設け
られ、更にこの外側を挟むように第１、第２クラッド層
６、１３中に活性層７と同一のバンドギャップ（屈折
率）、即ち発振波長エネルギーに等しいエネルギーのバ
ンドギャップを有する第１、第２可飽和光吸収層４、１
１が設けられている。As can be seen from these figures, the first and second cladding layers 6 and 13 have a smaller refractive index and a larger band gap than the active layer 8. The first and second barrier layers 7 having a refractive index smaller than those of the first and second clad layers 6 and 13 and a large bandgap on both sides so as to sandwich the active layer 8 and having a larger layer thickness than the active layer 8. , 9 are provided, and the first and second clad layers 6 and 13 have the same bandgap (refractive index) as the active layer 7, that is, a bandgap of energy equal to the oscillation wavelength energy so as to sandwich the outer side. First and second saturable light absorbing layers 4, 1
1 is provided.

【００２０】斯る半導体レーザ素子の製造方法を図３を
用いて説明する。A method of manufacturing such a semiconductor laser device will be described with reference to FIG.

【００２１】最初に、図３（ａ）に示すように有機金属
気相成長法（ＭＯＣＶＤ法）又は分子線エピタキシャル
成長法（ＭＢＥ法）により、ｎ型ＧａＡｓ基板１上にｎ
型バッファ層２、ｎ型クラッド層３、ｎ型第１可飽和光
吸収層４、ｎ型クラッド層５、ｎ型第１障壁層７、アン
ドープの活性層８、ｐ型第２障壁層９、ｐ型クラッド層
１０、ｐ型第２可飽和光吸収層１１、ｐ型クラッド層１
２、及びｐ型キャップ層１４をこの順序で連続成長す
る。その後、通常のフォトリソグラフィ技術等を用い
て、前記ｐ型キャップ層１４上にストライプ状の層厚
０．２μｍのＳｉＯ2マスク層２０を形成する。前記Ｓ
ｉＯ2マスク層２０をマスクとして燐酸系エッチング液
により、前記ｐ型クラッド層１２が０．１〜０．３μｍ
厚残余するように前記ｐ型キャップ層１４及びｐ型クラ
ッド層１２をエッチングした後、塩酸エッチング液によ
り該残余したクラッド層１２をエッチング除去してスト
ライプ状のリッジ部形状にする。ここで、前記塩酸エッ
チング液はＡｌ組成比の小さいＡｌtＧａ1-tＡｓがＡｌ
組成比の大きいＡｌsＧａ1-sＡｓ（ｔ＜ｓ）に比べてエ
ッチングレートが小さいので、前記第２可飽和光吸収層
１１は所謂エッチング停止層としての作用も兼ね備え
る。従って、前記エッチングはこの第２可飽和光吸収層
１１で制御性良く止めることができる。First, as shown in FIG. 3A, n is formed on the n-type GaAs substrate 1 by metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxial growth (MBE).
Buffer layer 2, n-type cladding layer 3, n-type first saturable light absorbing layer 4, n-type cladding layer 5, n-type first barrier layer 7, undoped active layer 8, p-type second barrier layer 9, p-type clad layer 10, p-type second saturable light absorbing layer 11, p-type clad layer 1
2 and the p-type cap layer 14 are continuously grown in this order. Then, a stripe-shaped SiO 2 mask layer 20 having a layer thickness of 0.2 μm is formed on the p-type cap layer 14 by using a normal photolithography technique or the like. The S
The p-type clad layer 12 is 0.1 to 0.3 μm in thickness with a phosphoric acid-based etching solution using the iO 2 mask layer 20 as a mask.
After the p-type cap layer 14 and the p-type cladding layer 12 are etched so as to remain thick, the remaining cladding layer 12 is removed by etching with a hydrochloric acid etching solution to form a striped ridge portion shape. Here, in the hydrochloric acid etching solution, Al t Ga 1-t As having a small Al composition ratio is Al
Since the etching rate is smaller than that of Al s Ga 1-s As (t <s) having a large composition ratio, the second saturable light absorption layer 11 also has a function as a so-called etching stop layer. Therefore, the etching can be stopped with good controllability by the second saturable light absorption layer 11.

【００２２】その後、図３（ｂ）に示すように、前記Ｓ
ｉＯ2マスク層２０を介した状態で、ＭＯＣＶＤ法又は
ＭＢＥ法により前記第２可飽和光吸収層１１上並びにリ
ッジ部形状をなすｐ型キャップ層１４及びｐ型クラッド
層１２の側面にｎ型電流阻止層１５、１５を形成する。After that, as shown in FIG.
An n-type current is formed on the second saturable light absorption layer 11 and side surfaces of the p-type cap layer 14 and the p-type cladding layer 12 having a ridge shape by MOCVD or MBE with the iO 2 mask layer 20 interposed. The blocking layers 15 and 15 are formed.

【００２３】次に、図１に示すように、前記ＳｉＯ2マ
スク層２０をフッ酸系エッチング液で除去して前記ｐ型
キャップ層１４を露出させた後、ＭＯＣＶＤ法又はＭＢ
Ｅ法によりこの露出したｐ型キャップ層１４上及び前記
ｎ型電流阻止層１５、１５上にｐ型コンタクト層１６を
形成する。その後、前記ｐ型コンタクト層１６の上面及
びｎ型ＧａＡｓ基板１の下面にそれぞれＡｕ−Ｃｒから
なるｐ型側オーミック電極１７、Ａｕ−Ｓｎ−Ｃｒから
なるｎ型側オーミック電極１８を形成する。Next, as shown in FIG. 1, the SiO 2 mask layer 20 is removed with a hydrofluoric acid-based etching solution to expose the p-type cap layer 14, and then the MOCVD method or MB method is used.
A p-type contact layer 16 is formed on the exposed p-type cap layer 14 and the n-type current blocking layers 15 and 15 by the E method. After that, a p-type side ohmic electrode 17 made of Au—Cr and an n-type side ohmic electrode 18 made of Au—Sn—Cr are formed on the upper surface of the p-type contact layer 16 and the lower surface of the n-type GaAs substrate 1, respectively.

【００２４】ところで、上述では、活性層８の両側に第
１、第２障壁層７、９を設けた構成について説明した
が、第１障壁層７を設けず第２障壁層９のみであっても
よい。第１、第２障壁層７、９の両方を設けた上記第１
実施例としての自励発振型半導体レーザ素子と、第１障
壁層７を設けず第２障壁層９のみを設けた以外は上記第
１実施例と同じ構成である第２実施例としての自励発振
型半導体レーザ素子と、第１、第２障壁層７、９の両方
を設けない比較例としての自励発振型半導体レーザ素子
とについて、温度２５℃で光出力３ｍＷ時のレーザビー
ムの垂直方向の広がり角θ（度）、動作電流ＩOP（ｍ
Ａ）、温度２５℃の発振しきい値電流Ｉth（ｍＡ）、温
度２５℃から７０℃での特性温度Ｔ0（Ｋ）を測定し
た。尚、これら第１、第２実施例、及び比較例の素子
は、第１可飽和光吸収層４と活性層８の間隔、及び第２
可飽和光吸収層１１と活性層８の間隔は同じとし、他の
条件は、第１、第２障壁層の有無を除いて同じとした。
また、この測定は、第２障壁層９及びクラッド層１０の
ｐ型キャリア濃度を共通の値３×１０17ｃｍ-3、６×１
０17ｃｍ-3とした２種類の場合について行った。この結
果を図４〜図７に示す。これら測定においてこれら素子
は単一横モードで自励発振が良好に行われた。By the way, in the above, the structure in which the first and second barrier layers 7 and 9 are provided on both sides of the active layer 8 has been described, but the first barrier layer 7 is not provided and only the second barrier layer 9 is provided. Good. The above-mentioned first provided with both the first and second barrier layers 7 and 9.
A self-excited oscillation type semiconductor laser device as an example, and a self-excited type as a second example having the same configuration as the first example except that the first barrier layer 7 is not provided and only the second barrier layer 9 is provided. Regarding the oscillation type semiconductor laser device and the self-excited oscillation type semiconductor laser device as a comparative example in which both the first and second barrier layers 7 and 9 are not provided, the vertical direction of the laser beam at a temperature of 25 ° C. and an optical output of 3 mW Spread angle θ (degree), operating current I OP (m
A), oscillation threshold current I th (mA) at a temperature of 25 ° C., and characteristic temperature T 0 (K) from a temperature of 25 ° C. to 70 ° C. were measured. The elements of the first and second examples and the comparative example are the same as those of the first saturable light absorbing layer 4 and the active layer 8 and the second
The saturable light absorbing layer 11 and the active layer 8 have the same distance, and the other conditions are the same except for the presence or absence of the first and second barrier layers.
In addition, the p-type carrier concentration of the second barrier layer 9 and the cladding layer 10 was set to a common value of 3 × 10 17 cm −3 and 6 × 1.
It carried out about two kinds of cases which were set to 0 17 cm -3 . The results are shown in FIGS. In these measurements, these devices showed good self-sustained pulsation in the single transverse mode.

【００２５】図４は第１実施例、第２実施例、及び比較
例としての自励発振型半導体レーザ素子の垂直方向の広
がり角θ（度）と前記ｐ型キャリア濃度との関係を示
す。FIG. 4 shows the relationship between the vertical spread angle θ (degrees) of the self-excited oscillation type semiconductor laser devices as the first and second embodiments and the comparative example and the p-type carrier concentration.

【００２６】この図から、第２障壁層９及びクラッド層
１０のキャリア濃度に関係なく、第１実施例、第２実施
例、比較例の広がり角θは、約３３度、約３５度、約３
７度となることが判る。即ち、広がり角度θは、第１、
第２障壁層７、９の両方ともない比較例に比べ、第２障
壁層９を備えた第２実施例が小さくなり、更に第１、第
２障壁層７、９の両方を備えた第１実施例が小さくなる
ことが判る。From this figure, regardless of the carrier concentrations of the second barrier layer 9 and the cladding layer 10, the divergence angle θ of the first example, the second example, and the comparative example is about 33 degrees, about 35 degrees, and about 30 degrees. Three
It turns out that it will be 7 degrees. That is, the spread angle θ is
The second embodiment including the second barrier layer 9 is smaller than the comparative example including neither the second barrier layer 7 nor the second barrier layer 9, and the first embodiment including both the first and second barrier layers 7 and 9 is smaller. It turns out that the example becomes smaller.

【００２７】図５は第１実施例、第２実施例、及び比較
例としての自励発振型半導体レーザ素子の動作電流ＩOP
（ｍＡ）と前記ｐ型キャリア濃度の関係を示す。FIG. 5 shows the operating current I OP of the self-excited oscillation type semiconductor laser device as the first embodiment, the second embodiment and the comparative example.
The relationship between (mA) and the p-type carrier concentration is shown.

【００２８】この図から、動作電流ＩOPは、第１、第２
障壁層７、９の両方共ない比較例に比べ、第２障壁層９
を備えた第２実施例が小さく、更に第１、第２障壁層
７、９の両方を備えた第１実施例が小さくなり、特に第
２障壁層９及びクラッド層１０のキャリア濃度を低くし
た方が小さくできることが判る。From this figure, the operating current I OP is the first and second
The second barrier layer 9 is different from the comparative example in which both the barrier layers 7 and 9 are not provided.
The second embodiment provided with is smaller, and the first embodiment provided with both the first and second barrier layers 7 and 9 is smaller, and the carrier concentration of the second barrier layer 9 and the cladding layer 10 is particularly low. It turns out that it can be made smaller.

【００２９】図６は第１実施例、第２実施例、及び比較
例としての自励発振型半導体レーザ素子の発振しきい値
電流Ｉth（ｍＡ）と前記ｐ型キャリア濃度の関係を示
す。FIG. 6 shows the relationship between the oscillation threshold current I th (mA) and the p-type carrier concentration of the self-excited oscillation type semiconductor laser devices as the first and second examples and the comparative example.

【００３０】この図から、発振しきい値電流Ｉthも動作
電流ＩOPと同様、第１、第２障壁層７、９の両方共ない
比較例に比べ、第２障壁層９を備えた第２実施例が小さ
く、更に第１、第２障壁層７、９の両方を備えた第１実
施例が小さくなり、特に第２障壁層９及びクラッド層１
０のキャリア濃度を低くした方が小さくできることが判
る。From this figure, the oscillation threshold current I th is the same as the operating current I OP , as compared with the comparative example in which neither the first nor second barrier layers 7 and 9 are provided. The second embodiment is smaller, and the first embodiment having both the first and second barrier layers 7 and 9 is smaller, especially the second barrier layer 9 and the cladding layer 1.
It can be seen that lowering the carrier concentration of 0 can reduce the carrier concentration.

【００３１】図７は第１実施例、第２実施例、及び比較
例としての自励発振型半導体レーザ素子の特性温度Ｔ0
（Ｋ）と前記ｐ型キャリア濃度の関係を示す。FIG. 7 shows the characteristic temperature T 0 of the self-excited oscillation type semiconductor laser device as the first embodiment, the second embodiment, and the comparative example.
The relationship between (K) and the p-type carrier concentration is shown.

【００３２】この図から、特性温度Ｔ0は、第１、第２
障壁層７、９の両方共ない比較例に比べ、第２障壁層９
を備えた第２実施例が大きくなり、更に第１、第２障壁
層７、９の両方を備えた第１実施例が大きくなり、特に
第２障壁層７及びクラッド層１０のキャリア濃度が大き
い場合に大きくできることが判る。From this figure, the characteristic temperature T 0 is
The second barrier layer 9 is different from the comparative example in which both the barrier layers 7 and 9 are not provided.
The second embodiment having the above-mentioned structure becomes larger, and the first embodiment having both the first and second barrier layers 7 and 9 becomes larger. In particular, the carrier concentration of the second barrier layer 7 and the cladding layer 10 is large. It turns out that you can make it bigger.

【００３３】これら図４〜図７から、垂直方向の広がり
角θ、及び動作電流ＩOPは、第１、第２障壁層７、９の
両方共ない比較例に比べ、第２障壁層９を備えた第２実
施例がよく、更に第１、第２障壁層７、９の両方を備え
た第１実施例が格段によくなることが判る。また、第１
実施例、第２実施例からも判るように発振しきい値電流
Ｉth、特性温度Ｔ0は、前記第２障壁層９及びクラッド
層１０のｐ型キャリア濃度が通常の濃度範囲であれば全
く問題ない値であり、従って、上述したように前記ｐ型
キャリア濃度は、この濃度を大きくする場合に、特性温
度Ｔ0は良いが、動作電流ＩOPと発振しきい値電流Ｉth
は悪く、逆に該濃度を小さくする場合に、特性温度Ｔ0
が悪く、動作電流ＩOPと発振しきい値電流Ｉthが良くな
るので、用途に応じて選択すればよい。更に、図示しな
いが、非点隔差は、比較例と第２実施例は略同じであ
り、第１実施例はこれらより小さくなった。尚、第２障
壁層９、クラッド層１０以外のキャリア濃度は、素子特
性に大きく影響を与えないので、通常の範囲で適宜選択
すればよい。From these FIGS. 4 to 7, the divergence angle θ in the vertical direction and the operating current I OP are higher in the second barrier layer 9 than in the comparative example in which both the first and second barrier layers 7 and 9 are not used. It can be seen that the second embodiment provided is better, and the first embodiment provided with both the first and second barrier layers 7, 9 is much better. Also, the first
As can be seen from the examples and the second examples, the oscillation threshold current I th and the characteristic temperature T 0 are completely within the normal concentration range of the p-type carrier concentration of the second barrier layer 9 and the cladding layer 10. This is a problem-free value. Therefore, as described above, when the p-type carrier concentration is increased, the characteristic temperature T 0 is good, but the operating current I OP and the oscillation threshold current I th are good.
Is bad, and conversely, when the concentration is reduced, the characteristic temperature T 0
And the operating current I OP and the oscillation threshold current I th are good, so that it can be selected according to the application. Further, although not shown, the astigmatic difference was substantially the same in the comparative example and the second example, and was smaller in the first example. The carrier concentrations other than those of the second barrier layer 9 and the cladding layer 10 do not significantly affect the device characteristics, and thus may be appropriately selected within the normal range.

【００３４】上記第１障壁層７、第２障壁層９はこれら
の層厚が活性層８の層厚に比べて小さい場合でも、動作
電流及び垂直方向の広がり角θを小さくできる。しか
し、理由は明らかでないが、第１障壁層７、第２障壁層
９の層厚を極めて小さくした場合（即ち、障壁層７、９
が実質的に光に対して影響を与えない場合）に比べて、
上述のように第１障壁層７、第２障壁層９の層厚が活性
層８の層厚に比べて大きい場合に特に上述のような顕著
な効果があった。このような顕著な効果は、第１、第２
可飽和光吸収層４、１１が活性層８を対して挟むような
構成で且つ該活性層８に比べて層厚が大きい第１障壁層
７又は第２障壁層９が活性層８に近接して設けられてい
る場合に得られ、特に第１、第２可飽和光吸収層４、１
１、及び第１、第２障壁層７、９が活性層８に対して対
称な位置に設けられた場合に好ましい効果が得られる。Even if the layer thicknesses of the first barrier layer 7 and the second barrier layer 9 are smaller than the layer thickness of the active layer 8, the operating current and the vertical spread angle θ can be made small. However, although the reason is not clear, when the layer thickness of the first barrier layer 7 and the second barrier layer 9 is made extremely small (that is, the barrier layers 7 and 9).
, Which does not substantially affect the light),
As described above, when the layer thicknesses of the first barrier layer 7 and the second barrier layer 9 are larger than the layer thickness of the active layer 8, the above-described remarkable effect is obtained. Such remarkable effects are
The saturable light absorbing layers 4 and 11 are arranged so as to sandwich the active layer 8 therebetween, and the first barrier layer 7 or the second barrier layer 9 having a larger layer thickness than the active layer 8 is close to the active layer 8. And the first and second saturable light absorption layers 4 and 1, respectively.
A preferable effect is obtained when the first and the first and second barrier layers 7 and 9 are provided at symmetrical positions with respect to the active layer 8.

【００３５】また、上述の第１、第２の可飽和光吸収層
４、１１のバンドギャップは、活性層８のバンドギャッ
プと同じであるが、多少大きくても小さく（例えばＡｌ
組成比差で±０．０１程度）ても発振光を吸収して可飽
和状態になり、この結果自励発振するので、第１、第２
の可飽和光吸収層４、１１のバンドギャップは、発振波
長エネルギー（発振光のエネルギー：ｈν）に略等しい
エネルギーであれば同様の効果が得られる。更に、前記
活性層８は上記構造に限らず量子井戸構造からなっても
よい。The band gaps of the first and second saturable light absorbing layers 4 and 11 described above are the same as the band gap of the active layer 8, but may be slightly larger or smaller (for example, Al.
Even if the composition ratio difference is about ± 0.01), the oscillation light is absorbed and a saturable state occurs, and as a result, self-excited oscillation occurs.
The same effect can be obtained as long as the band gaps of the saturable light absorption layers 4 and 11 are energy substantially equal to the oscillation wavelength energy (oscillation light energy: hν). Further, the active layer 8 is not limited to the above structure and may have a quantum well structure.

【００３６】更に、上述ではＡｌＧａＡｓ系半導体レー
ザ素子について述べたが、他の例えばＡｌＧａＩｎＰ系
半導体レーザ素子でも同様の効果が得られる。尚、Ａｌ
ＧａＩｎＰ系半導体は、ＡｌＧａＡｓ系半導体と同様に
Ａｌ組成比が大きくなるに従って、バンドギャップが大
きく且つ屈折率が小さくなるので、Ａｌ組成比を変える
ことにより、バンドギャップ及び屈折率を選択できる。Further, although the AlGaAs semiconductor laser device has been described above, the same effect can be obtained with other AlGaInP semiconductor laser devices, for example. In addition, Al
The GaInP-based semiconductor has a larger bandgap and a smaller refractive index as the Al composition ratio increases like the AlGaAs-based semiconductor. Therefore, the bandgap and the refractive index can be selected by changing the Al composition ratio.

【００３７】また、上述のリッジ型の半導体レーザ素子
に限らず、セルフアライン型等の他の構造の半導体レー
ザ素子に用いても効果がある。Further, the present invention is not limited to the above-mentioned ridge type semiconductor laser element, but is also effective when used for a semiconductor laser element of other structure such as a self-aligned type.

【００３８】また、上記実施例の各クラッド層３、５、
１０、１２は、同じ屈折率、バンドギャップを有する構
成であるが、必ずしも同一である必要はない。即ち、第
１、第２クラッド層６、１３は均一である必要はない。In addition, each clad layer 3, 5 of the above embodiment,
Although 10 and 12 have the same refractive index and band gap, they do not necessarily have to be the same. That is, the first and second cladding layers 6 and 13 do not need to be uniform.

【００３９】[0039]

【発明の効果】本発明の自励発振型半導体レーザ素子
は、第１導電型の半導体基板と、該半導体基板上に設け
た第１導電型の第１クラッド層と、該第１クラッド層上
に設けた活性層と、該活性層上に設けた第２導電型の第
２クラッド層とを備え、前記第１、第２クラッド層の層
中にそれぞれ発振波長エネルギーに略等しいエネルギー
のバンドギャップを有する第１、第２可飽和光吸収層を
有し、且つ前記第１、第２クラッド層は前記活性層より
小さい屈折率及び大きいバンドギャップを有し、且つ前
記第１クラッド層と前記活性層の間又は前記活性層と前
記第２クラッド層の間の少なくとも一方に該第１クラッ
ド層及び該第２クラッド層より小さい屈折率及び大きな
バンドギャップを有する障壁層を設けたので、自励発振
型半導体レーザ素子として戻り光雑音を十分に低減でき
る。更に、斯る構成では、動作電流値が小さくなるの
で、低消費電力となり、また垂直方向のビーム広がり角
が小さくなるので、この素子と組み合わせて対物レンズ
を使用する場合にこのレンズとの結合効率が良好にで
き、この結果、更に低消費電力が可能となる。また、非
点隔差が小さいので、出力されたビーム（レーザ光）を
十分に絞ることができ、光ディスク装置等の光源として
用いた場合にクロストークのＳＮ比がよくなる。According to the self-excited oscillation type semiconductor laser device of the present invention, a first conductivity type semiconductor substrate, a first conductivity type first clad layer provided on the semiconductor substrate, and a first conductivity type first clad layer are provided. And an active layer provided on the active layer, and a second conductivity type second cladding layer provided on the active layer, wherein the band gaps of the first and second cladding layers each have an energy substantially equal to the oscillation wavelength energy. Having first and second saturable light absorption layers, and the first and second clad layers having a refractive index and a larger bandgap smaller than that of the active layer, and the first clad layer and the active layer. Since a barrier layer having a refractive index smaller than that of the first cladding layer and the second cladding layer and having a larger bandgap is provided between the layers or at least one of the active layer and the second cladding layer, self-sustained pulsation Type semiconductor laser device To return light noise can be sufficiently reduced. Further, in such a configuration, the operating current value becomes small, resulting in low power consumption, and the beam divergence angle in the vertical direction becomes small. Therefore, when an objective lens is used in combination with this element, the coupling efficiency with this lens is small. Can be improved, and as a result, lower power consumption can be achieved. Further, since the astigmatic difference is small, the output beam (laser light) can be sufficiently narrowed down, and the SN ratio of crosstalk is improved when it is used as a light source for an optical disk device or the like.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明に係る一実施例の半導体レーザ素子の断
面構造を示す模式図である。FIG. 1 is a schematic view showing a cross-sectional structure of a semiconductor laser device according to an embodiment of the present invention.

【図２】上記実施例の活性層近傍のエネルギーバンド構
造及び屈折率を示す概略図である。FIG. 2 is a schematic diagram showing an energy band structure and a refractive index in the vicinity of an active layer in the above-mentioned embodiment.

【図３】上記実施例の半導体レーザ素子の製造工程図で
ある。FIG. 3 is a manufacturing process diagram of the semiconductor laser device according to the embodiment.

【図４】本発明に係る実施例と比較例の広がり角θの特
性を示す図である。FIG. 4 is a diagram showing characteristics of a spread angle θ of an example according to the present invention and a comparative example.

【図５】本発明に係る実施例と比較例の動作電流ＩOPの
特性を示す図である。FIG. 5 is a diagram showing characteristics of operating current I OP of the example according to the present invention and the comparative example.

【図６】本発明に係る実施例と比較例の発振しきい値電
流Ｉthの特性を示す図である。FIG. 6 is a diagram showing characteristics of oscillation threshold current I th of an example according to the present invention and a comparative example.

【図７】本発明に係る実施例と比較例の特性温度Ｔ0の
特性を示す図である。FIG. 7 is a diagram showing characteristics of a characteristic temperature T 0 of an example according to the present invention and a comparative example.

【符号の説明】[Explanation of symbols]

１ ｎ型ＧａＡｓ基板 ３ ｎ型クラッド層 ４ ｎ型第１可飽和光吸収層 ５ ｎ型クラッド層 ６ ｎ型第１クラッド層 ７ ｎ型第１障壁層 ８ 活性層 ９ ｐ型第１障壁層 １０ ｐ型クラッド層 １１ ｐ型第２可飽和光吸収層 １２ ｐ型クラッド層 １３ ｐ型第２クラッド層 1 n-type GaAs substrate 3 n-type clad layer 4 n-type first saturable light absorption layer 5 n-type clad layer 6 n-type first clad layer 7 n-type first barrier layer 8 active layer 9 p-type first barrier layer 10 p-type clad layer 11 p-type second saturable light absorbing layer 12 p-type clad layer 13 p-type second clad layer

───────────────────────────────────────────────────── フロントページの続き (72)発明者 田尻 敦志 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 (72)発明者 古沢 浩太郎 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 (72)発明者 松本 光晴 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 (72)発明者 松川 健一 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 (72)発明者 後藤 壮謙 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 (72)発明者 井手 大輔 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Atsushi Tajiri 2-18 Keihan Hon-dori, Moriguchi City, Osaka Sanyo Electric Co., Ltd. (72) Inventor Kotaro Furusawa 2-chome Keihan Hon-dori, Moriguchi City, Osaka Sanyo Denki Incorporated (72) Inventor Mitsuharu Matsumoto 2-18 Keihan Hondori, Moriguchi City, Osaka Sanyo Electric Co., Ltd. (72) Inventor Kenichi Matsukawa 2-18 Keihan Hondori, Moriguchi City, Osaka Sanyo Electric Co., Ltd. ( 72) Inventor Soken Gohan, 2-18, Keihan Hondori, Moriguchi City, Osaka Prefecture Sanyo Electric Co., Ltd. (72) Inventor, Daisuke Ide, 2-18, Keihan Hondori, Moriguchi City, Osaka Prefecture Sanyo Electric Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】 第１導電型の半導体基板と、該半導体基
板上に設けた第１導電型の第１クラッド層と、該第１ク
ラッド層上に設けた活性層と、該活性層上に設けた第２
導電型の第２クラッド層とを備え、前記第１、第２クラ
ッド層は前記活性層より小さい屈折率及び大きいバンド
ギャップを有し、且つ前記第１、第２クラッド層の層中
にそれぞれ発振波長エネルギーに略等しいエネルギーの
バンドギャップを有する可飽和光吸収層を設け、且つ前
記第１クラッド層と前記活性層の間又は前記活性層と前
記第２クラッド層の間の少なくとも一方に該第１クラッ
ド層及び該第２クラッド層より小さい屈折率及び大きな
バンドギャップを有する障壁層を設けたことを特徴とす
る自励発振型半導体レーザ素子。1. A semiconductor substrate of a first conductivity type, a first conductivity type first clad layer provided on the semiconductor substrate, an active layer provided on the first clad layer, and an active layer on the active layer. Second provided
A conductive second clad layer, wherein the first and second clad layers have a smaller refractive index and a larger bandgap than the active layer, and oscillate in layers of the first and second clad layers, respectively. A saturable light absorption layer having a bandgap having an energy substantially equal to the wavelength energy is provided, and the first saturable layer is provided at least between the first clad layer and the active layer or between the active layer and the second clad layer. A self-pulsation type semiconductor laser device comprising a cladding layer and a barrier layer having a larger refractive index and a larger bandgap than the second cladding layer.
JP16192593A 1992-11-06 1993-06-30 Self-excited oscillation type semiconductor laser element Pending JPH0722695A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP16192593A JPH0722695A (en) 1993-06-30 1993-06-30 Self-excited oscillation type semiconductor laser element
US08/147,779 US5416790A (en) 1992-11-06 1993-11-04 Semiconductor laser with a self-sustained pulsation
US08/365,176 US5506170A (en) 1992-11-06 1994-12-28 Method of making a semiconductor laser with a self-sustained pulsation
US08/536,370 US5610096A (en) 1992-11-06 1995-09-29 Semiconductor laser with a self sustained pulsation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16192593A JPH0722695A (en) 1993-06-30 1993-06-30 Self-excited oscillation type semiconductor laser element

Publications (1)

Publication Number Publication Date
JPH0722695A true JPH0722695A (en) 1995-01-24

Family

ID=15744647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16192593A Pending JPH0722695A (en) 1992-11-06 1993-06-30 Self-excited oscillation type semiconductor laser element

Country Status (1)

Country Link
JP (1) JPH0722695A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08204282A (en) * 1995-01-19 1996-08-09 Nec Corp Semiconductor laser
US5555271A (en) * 1993-12-27 1996-09-10 Sanyo Electric Co., Ltd. Semiconductor laser device
WO1996030977A1 (en) * 1995-03-31 1996-10-03 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and optical disk apparatus using the same
WO1996034439A1 (en) * 1995-04-28 1996-10-31 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and optical disk device using the laser
WO1996037024A1 (en) * 1995-05-17 1996-11-21 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and optical disk device
US5608752A (en) * 1994-04-28 1997-03-04 Sanyo Electric Co., Ltd. Semiconductor laser device and method of designing the same
US6014394A (en) * 1996-09-26 2000-01-11 Nec Corporation Semiconductor laser
US6151348A (en) * 1996-03-04 2000-11-21 Matsushita Electric Industrial Co., Ltd. Semiconductor laser
US6195374B1 (en) 1995-09-29 2001-02-27 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and optical disk device using the laser
US7095769B2 (en) * 2003-06-25 2006-08-22 Samsung Electro-Mechanics Co., Ltd. Semiconductor laser diode with higher-order mode absorption layers
US7573390B2 (en) 2004-03-15 2009-08-11 Iwata Label Co., Ltd. Split-able label

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5555271A (en) * 1993-12-27 1996-09-10 Sanyo Electric Co., Ltd. Semiconductor laser device
US5608752A (en) * 1994-04-28 1997-03-04 Sanyo Electric Co., Ltd. Semiconductor laser device and method of designing the same
JPH08204282A (en) * 1995-01-19 1996-08-09 Nec Corp Semiconductor laser
US6081541A (en) * 1995-03-31 2000-06-27 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and optical disk apparatus using the same
WO1996030977A1 (en) * 1995-03-31 1996-10-03 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and optical disk apparatus using the same
US6141364A (en) * 1995-03-31 2000-10-31 Matsushita Electric Industrial Co., Ltd Semiconductor laser device and optical disk apparatus using the same
US6072817A (en) * 1995-03-31 2000-06-06 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and optical disk apparatus using the same
WO1996034439A1 (en) * 1995-04-28 1996-10-31 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and optical disk device using the laser
WO1996037024A1 (en) * 1995-05-17 1996-11-21 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and optical disk device
US6195374B1 (en) 1995-09-29 2001-02-27 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and optical disk device using the laser
US6373874B1 (en) 1995-09-29 2002-04-16 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and optical disk device using the laser
US6444485B1 (en) 1995-09-29 2002-09-03 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and optical disk device using the laser
US6151348A (en) * 1996-03-04 2000-11-21 Matsushita Electric Industrial Co., Ltd. Semiconductor laser
US6014394A (en) * 1996-09-26 2000-01-11 Nec Corporation Semiconductor laser
US7095769B2 (en) * 2003-06-25 2006-08-22 Samsung Electro-Mechanics Co., Ltd. Semiconductor laser diode with higher-order mode absorption layers
US7573390B2 (en) 2004-03-15 2009-08-11 Iwata Label Co., Ltd. Split-able label

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