JPH0720913Y2 - Light processor - Google Patents
Light processorInfo
- Publication number
- JPH0720913Y2 JPH0720913Y2 JP1987044244U JP4424487U JPH0720913Y2 JP H0720913 Y2 JPH0720913 Y2 JP H0720913Y2 JP 1987044244 U JP1987044244 U JP 1987044244U JP 4424487 U JP4424487 U JP 4424487U JP H0720913 Y2 JPH0720913 Y2 JP H0720913Y2
- Authority
- JP
- Japan
- Prior art keywords
- light
- wafer
- processing table
- illuminance
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【考案の詳細な説明】 ［産業上の利用分野］ この考案は、互いに平行に配置した複数の棒状の光源
と、これら各光源を覆う複数の反射ミラーとを有する光
照射器と処理台等からなる光処理器に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to a light irradiator having a plurality of rod-shaped light sources arranged in parallel to each other, and a plurality of reflection mirrors for covering the respective light sources, a processing table, and the like. The present invention relates to a light processor.
［従来の技術］ 第４図は従来の光処理器を用いて半導体ウエハを光照射
処理する場合における２つのランプからの光が互いに合
成される部分の概略を示した図で、同図（ａ）は直径約
150mmの半導体のウエハ３をウエハの処理台４に載置し
た状態において、このウエハ３に対して照射される棒状
の光源である高圧水銀灯からなるランプ１を２本用い、
それぞれのランプ１に反射ミラー２を配置して光照射す
る場合の概略説明図で、100は光照射器のケーシング
で、ランプ１や反射ミラー２等の保持機構等は図から省
略してある。また同図（ｂ）は同図（ａ）におけるウエ
ハ３に照射される光の照度分布を示した図であって、こ
の場合処理台４が光照射区域にあたる。そして、通常ウ
エハ３はこの処理台中央に配置され、上記光照射器から
の光照射を受ける。第４図の処理器において、ウエハ３
の光処理に寄与する光は主として、図中、矢印で示すよ
うに反射ミラー２の互いに隣り合う部分、即ちウエハの
処理台４に近い部分で反射された光が合成されたもので
ある。そして、同図（ｂ）から明らかなように、例えば
ランプ２本のピッチ間隔が110mmの場合、ウエハ３の中
心から約25mm程離れた位置における照度が最も強く、そ
の位置での照度を100％とすると、ウエハ３の中心から
周辺に外れるにつれて照度が下がり、直径約150mmのウ
エハ３の周辺端部では80〜70％程度に照度は下がってし
まうことがわかる。[Prior Art] FIG. 4 is a view showing an outline of a portion where lights from two lamps are combined with each other when a semiconductor wafer is subjected to light irradiation processing using a conventional light processing device. ) Is about diameter
With a semiconductor wafer 3 of 150 mm mounted on the wafer processing table 4, two lamps 1 composed of a high-pressure mercury lamp, which is a rod-shaped light source for irradiating the wafer 3, are used.
FIG. 1 is a schematic explanatory view of a case where a reflection mirror 2 is arranged in each lamp 1 to irradiate light. Reference numeral 100 denotes a casing of a light irradiator, and a holding mechanism for the lamp 1, the reflection mirror 2, etc. is omitted from the drawing. Further, FIG. 2B is a diagram showing the illuminance distribution of the light with which the wafer 3 in FIG. Then, the normal wafer 3 is arranged at the center of the processing table and receives light irradiation from the light irradiation device. In the processor shown in FIG. 4, the wafer 3
The light contributing to the optical processing is mainly the light reflected by the portions of the reflecting mirrors 2 adjacent to each other, that is, the portions near the processing table 4 of the wafer, as indicated by the arrows in the figure. As is clear from FIG. 7B, for example, when the pitch interval between the two lamps is 110 mm, the illuminance is strongest at a position about 25 mm away from the center of the wafer 3, and the illuminance at that position is 100%. Then, the illuminance decreases as the distance from the center of the wafer 3 to the periphery decreases, and the illuminance decreases to about 80 to 70% at the peripheral edge of the wafer 3 having a diameter of about 150 mm.
［考案が解決しようとする問題点］ 上記のような従来の光処理器においては、被照射物に対
する光の照度分布は不均一なために、半導体のウエハの
レジスト処理等のような場合、光照射処理が均一に行わ
れず、そのような光処理器で処理したウエハを基に構成
した半導体素子には、多大の悪影響を及ぼし、最悪の場
合は不良品製造の原因となるという問題があった。[Problems to be Solved by the Invention] In the conventional optical processor as described above, the illuminance distribution of the light on the object to be irradiated is not uniform. Irradiation processing was not performed uniformly, and there was a problem that a semiconductor element configured based on a wafer processed by such an optical processing device had a great adverse effect and, in the worst case, a defective product was manufactured. .
この考案はかかる従来の問題点を解決するためになされ
たもので、被照射物を載置する処理台上の照度分布を均
一にして、光照射処理を効率よく行うことのできる簡単
な構造の光処理器を提供することを目的とする。The present invention has been made in order to solve such a conventional problem, and has a simple structure capable of performing light irradiation processing efficiently by making the illuminance distribution on the processing table on which the irradiation target is placed uniform. An object is to provide an optical processor.
［問題点を解決するための手段］ 上記の目的を達成するために、この考案の光処理器は、
各光源を覆う反射ミラーの少くとも片方の反射面であっ
て、前記棒状の光源に対応する上部長手方向に細長い形
状の透孔を設けた構成を有する光照射器を具備するもの
である。[Means for Solving the Problems] In order to achieve the above object, the optical processor of the present invention comprises:
The light irradiator has a structure in which at least one reflection surface of a reflection mirror covering each light source is provided with an elongated through hole in the upper longitudinal direction corresponding to the rod-shaped light source.
［作用］ 上記の構成を有することにより、処理台における光の照
度分布は、照度の最も強い部分と、その他の部分との差
が少なくなり、ほぼ均一な照度分布の光照射が行われる
ようになった。[Operation] With the above configuration, the illuminance distribution of light on the processing table has a small difference between the strongest illuminance portion and the other portions, so that the light irradiation with a substantially uniform illuminance distribution is performed. became.
［実施例］ 第１図はこの考案の一実施例であるランプ１及び反射ミ
ラー２を２本用いた場合の光照射器における相互の光が
合成される部分の概略を示した斜視図であり、第２図
（ａ）は第１図の光照射器を光処理器に用いて半導体の
ウエハ３を処理台４に載置したときの断面図で、同図
（ｂ）は同図（ａ）の処理台４上におけるウエハ３への
光照射の照度分布を示した図である。第１図，第２図に
おいて、５は反射ミラー２の上部の反射面に設けられた
透孔で、互いに隣り合う部分であって、ランプ１の上面
の長手方向に穿設されている。[Embodiment] FIG. 1 is a perspective view showing an outline of a portion where light is combined in a light irradiator when two lamps 1 and two reflecting mirrors 2 according to an embodiment of the present invention are used. 2A is a cross-sectional view when the semiconductor wafer 3 is placed on the processing table 4 by using the light irradiator shown in FIG. 1 as an optical processor, and FIG. FIG. 4 is a diagram showing an illuminance distribution of light irradiation on the wafer 3 on the processing table 4 in FIG. In FIGS. 1 and 2, reference numeral 5 denotes a through hole provided on the reflecting surface of the upper portion of the reflecting mirror 2, which is adjacent to each other and is formed in the longitudinal direction of the upper surface of the lamp 1.
第１図，第２図において、２つのランプ１から放射され
た光は、反射ミラー２でそれぞれ反射されて合成され
る。その際、図中矢印で示した一部分の光が透孔５から
それぞれ透過してしまうので、残りの反射光を合成した
光は、透孔５のない場合に比較して幾分弱まっている。
しかし、これら互いに隣合う反射面から反射されて合成
された光は処理台４上のウエハ３の中央部に照射される
光であって、この中央部の照度は周辺部に比較して、元
来強くなっている。従って、この実施例のように透孔５
から透過する光を差引いた反射光のみを合成しても、ま
だ周辺部より中央部の照度が強い。In FIGS. 1 and 2, the light emitted from the two lamps 1 is reflected by the reflection mirror 2 and combined. At that time, since a part of the light indicated by the arrow in the figure is transmitted through the through hole 5, the light obtained by combining the remaining reflected light is somewhat weakened as compared with the case without the through hole 5.
However, the light reflected by the reflecting surfaces adjacent to each other and combined is the light irradiated to the central portion of the wafer 3 on the processing table 4, and the illuminance at this central portion is lower than that at the peripheral portion. I'm getting stronger. Therefore, as in this embodiment, the through hole 5
Even if only the reflected light is subtracted from the transmitted light, the illuminance in the central part is still stronger than in the peripheral part.
因みに、この実施例では、例えば357［Ｖ］,13.6
［Ａ］,418［mW/cm2］の特性を有する高圧水銀灯からな
るランプ１を２本用いた場合、及び371［Ｖ］,13.8
［Ａ］,877.8［mW/cm2］の特性を有する高圧水銀灯から
なるランプ１を２本用いた場合の各光照射器において、
反射ミラー２に設けた透孔５の面積を60mm×10mmにした
場合についてそれぞれ実験を行った。その結果、透孔５
を設けない従来の場合は、直径約150mmのウエハの中央
部の照度100％に対し、周辺部の照度が70％程度であっ
たものが、この実施例のように透孔５を設けたものは、
中央部の照度100％に対し、周辺部の照度90％程度でほ
とんど均一の照度分布が得られることとなった。尤も、
透孔５を設けたことによって、光の一部がこの透孔５の
部分から透過してしまって、ウエハ３、即ち処理台４の
中央部の照度が幾分弱まるが、そのかわり照度分布が均
一になったことにより、光照射器における光照射特性は
向上した。従来、この光処理器によって処理されるウエ
ハの直径が、現在よく用いられる約150mmから約200mmへ
と大型化するにつれて、処理台上の照度分布を均一化す
ることは光処理器における性能として一層強く望まれる
ものである。そこで、処理されるウエハの径に応じて透
孔の寸法も適宜変えなければならないのは当然であっ
て、処理するウエハの径の大型化に伴って、照度分布の
均一化は避けることができない。従って、被照射処理物
であるウエハが大型化するにつれてランプ１の出力及び
反射ミラー２の大きさが大きくなければならないが、そ
の場合、ランプ１と反射ミラー２をそれぞれ多数（３個
以上）設けることが考えられる。Incidentally, in this embodiment, for example, 357 [V], 13.6
[A], when using two lamps 1 composed of a high-pressure mercury lamp having a characteristic of 418 [mW / cm 2 ] and 371 [V], 13.8
[A], 877.8 [mW / cm 2 ] In each light irradiator when using two lamps 1 composed of a high-pressure mercury lamp,
Experiments were carried out when the area of the through hole 5 provided in the reflection mirror 2 was set to 60 mm × 10 mm. As a result, through hole 5
In the conventional case where the illuminance is not provided, the illuminance of the peripheral portion is about 70% with respect to the illuminance of 100% in the central portion of the wafer having a diameter of about 150 mm, but the through hole 5 is provided as in this embodiment. Is
It was decided that an almost uniform illuminance distribution could be obtained when the illuminance was 90% in the peripheral area compared to 100% in the central area. However,
By providing the through hole 5, a part of the light is transmitted through the through hole 5 and the illuminance of the wafer 3, that is, the central portion of the processing table 4 is somewhat weakened. The uniformity of the light improves the light irradiation characteristics of the light irradiator. Conventionally, as the diameter of wafers processed by this optical processor has increased from about 150 mm, which is often used today, to about 200 mm, it is more efficient for the optical processor to make the illuminance distribution on the processing table uniform. It is strongly desired. Therefore, it is natural that the size of the through hole must be appropriately changed according to the diameter of the wafer to be processed, and the illuminance distribution cannot be made uniform as the diameter of the wafer to be processed is increased. . Therefore, the output of the lamp 1 and the size of the reflection mirror 2 must be increased as the size of the wafer to be irradiated increases. In that case, a large number (three or more) of the lamp 1 and the reflection mirror 2 are provided. It is possible.
第３図はこの考案の他の実施例を示す概略図で、ランプ
１及び反射ミラー２をそれぞれ３個以上設けた場合を示
している。第３図において、反射ミラー２は最も外側の
各１つを除いて、他の反射ミラー２にはそれぞれ両側に
透孔５が設けられている。ランプ１及び反射ミラー２を
３個以上設けた場合、光は処理台４において縞状に集中
するので、処理台４の照度分布を均一にするために、内
部に位置する反射ミラー２は、透孔５をその両側の反射
面に、最も外側の反射ミラー２は、透孔５をその内側の
反射面に設けることにより、ランプの光を一部分、外部
に透過させている。そして、この透孔５の寸法は、処理
台の照度分布が中央部と周辺部との差が10％以内になる
ように設計される。FIG. 3 is a schematic view showing another embodiment of the present invention, showing a case where three or more lamps 1 and three reflection mirrors 2 are provided. In FIG. 3, the reflecting mirrors 2 are provided with through holes 5 on both sides, except for the outermost one. When three or more lamps 1 and reflection mirrors 2 are provided, the light is concentrated in a striped pattern on the processing table 4, so that the reflection mirrors 2 located inside the transparent table 2 are transparent in order to make the illuminance distribution of the processing table 4 uniform. By providing the holes 5 on the reflection surfaces on both sides thereof and the outermost reflection mirror 2 by providing the through holes 5 on the inner reflection surfaces thereof, part of the light of the lamp is transmitted to the outside. The size of the through hole 5 is designed so that the difference in the illuminance distribution of the processing table between the central part and the peripheral part is within 10%.
［考案の効果］ 以上説明したとおり、この考案の光処理器は各光源を覆
う各反射ミラーの少くとも片側の反射面であって、前記
棒状の光源に対応する上部長手方向に細長い形状の透孔
を設け、処理台の中央の照射強度を抑制する構成を有す
るので、低コストで処理台上での均一な照度分布が得ら
れ、光処理の精度が向上するという利点がある。[Effects of the Invention] As described above, the optical processor of the present invention is a reflecting surface on at least one side of each reflecting mirror that covers each light source, and has an elongated shape in the upper longitudinal direction corresponding to the rod-shaped light source. Since a through hole is provided and the irradiation intensity at the center of the processing table is suppressed, there is an advantage that a uniform illuminance distribution on the processing table can be obtained at low cost and the accuracy of light processing is improved.
第１図はこの考案の一実施例であるランプ及び反射ミラ
ーを２本用いた場合の光照射器の概略を示した斜視図で
あり、第２図（ａ）は第１図の光照射器を光処理器に用
いて半導体のウエハを処理台に載置し光照射したときの
断面説明図、第２図（ｂ）は処理台上における照度分布
を示した図、第３図はこの考案の他の実施例を示す概略
図、第４図（ａ）は従来の光処理器を用いて半導体ウエ
ハを光照射処理する場合における２つのランプからの光
が互いに合成される部分の概略を示した図、第４図
（ｂ）は従来の光処理器の処理台上の照度分布を示した
図である。 図中。 1:ランプ、2:反射ミラー 3:ウエハ、4:処理台 5:透孔FIG. 1 is a perspective view showing an outline of a light irradiator in the case of using two lamps and two reflecting mirrors according to one embodiment of the present invention, and FIG. 2 (a) is a light irradiator of FIG. FIG. 2 (b) is a view showing an illuminance distribution on the processing table when a semiconductor wafer is placed on the processing table and irradiated with light by using the above as an optical processing device, and FIG. FIG. 4 (a) is a schematic view showing another embodiment of the present invention, showing an outline of a portion where lights from two lamps are combined with each other when light irradiation processing is performed on a semiconductor wafer using a conventional light processing device. FIG. 4B is a diagram showing the illuminance distribution on the processing table of the conventional optical processor. In the figure. 1: Lamp, 2: Reflective mirror 3: Wafer, 4: Processing table 5: Through hole
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/027 (56)参考文献 特開 昭50−9988（ＪＰ，Ａ) 実開 昭60−51812（ＪＰ，Ｕ) 実開 昭55−59403（ＪＰ，Ｕ)─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Internal reference number FI technical display location H01L 21/027 (56) References JP-A-50-9988 (JP, A) Actual development Sho-60- 51812 (JP, U) Actually opened 55-59403 (JP, U)
Claims (1)
と、これら各光源を覆う複数の反射ミラーとを有する光
照射器と、この光照射器からの照射光を受ける位置に配
置されてウエハを処理する処理台とよりなり、前記各反
射ミラーの少なくとも片方の反射物であって、前記棒状
の光源に対応する上部長手方向に細長い形状の透孔を設
け、該処理台の中央の照射強度を抑制するよう構成した
ことを特徴とする光処理器。1. A light irradiator having a plurality of rod-shaped light sources arranged in parallel with each other and a plurality of reflection mirrors covering the respective light sources, and a light irradiator arranged at a position for receiving irradiation light from the light irradiator. A processing table for processing a wafer, which is at least one of the reflecting mirrors, and has a through hole having an elongated shape in the upper longitudinal direction corresponding to the rod-shaped light source. An optical processor characterized by being configured to suppress irradiation intensity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987044244U JPH0720913Y2 (en) | 1987-03-27 | 1987-03-27 | Light processor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987044244U JPH0720913Y2 (en) | 1987-03-27 | 1987-03-27 | Light processor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63152235U JPS63152235U (en) | 1988-10-06 |
| JPH0720913Y2 true JPH0720913Y2 (en) | 1995-05-15 |
Family
ID=30861867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987044244U Expired - Lifetime JPH0720913Y2 (en) | 1987-03-27 | 1987-03-27 | Light processor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0720913Y2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0719044Y2 (en) * | 1989-06-22 | 1995-05-01 | 千代田化工建設株式会社 | Fluorescent lighting equipment |
| JP5473430B2 (en) * | 2008-11-14 | 2014-04-16 | 利朗 伊藤 | Lighting apparatus and lighting system using the lighting apparatus |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5117836B2 (en) * | 1973-06-04 | 1976-06-04 | ||
| JPS5559403U (en) * | 1978-10-18 | 1980-04-22 | ||
| JPS6051812U (en) * | 1983-09-19 | 1985-04-11 | 三菱電機株式会社 | lighting equipment |
-
1987
- 1987-03-27 JP JP1987044244U patent/JPH0720913Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63152235U (en) | 1988-10-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6125123Y2 (en) | ||
| JPH0720913Y2 (en) | Light processor | |
| JPH0542566Y2 (en) | ||
| JPH0272388A (en) | Lighting device | |
| JPH0861928A (en) | Illuminating device for appearange inspection | |
| KR20020044545A (en) | Light illuminating apparatus | |
| JP4419377B2 (en) | Flash lamp light irradiation device | |
| JPH0359402B2 (en) | ||
| JPH04312914A (en) | Ultraviolet radiating device | |
| JPS62143426A (en) | Light irradiation device | |
| JPS63245806A (en) | Lighting fixture | |
| JPS6031695Y2 (en) | Reflector for surgical light | |
| JPS5829499Y2 (en) | Car number light | |
| JPH04116917A (en) | Aligner | |
| JPS6327366Y2 (en) | ||
| JPH0728059A (en) | Illumination device for liquid crystal display device | |
| JPH046389A (en) | Lamp heating device | |
| JPH0258822A (en) | Apparatus for manufacturing semiconductor device | |
| JPS6022347Y2 (en) | Lighting equipment for copying machines, etc. | |
| JPH0643780Y2 (en) | Surface emitting device | |
| JPS6027394Y2 (en) | Light source device for plate making | |
| JPH0244276Y2 (en) | ||
| JPS58222663A (en) | Linear light source | |
| JPS5944702A (en) | Illuminator | |
| JPH01198026A (en) | Aligner for semiconductor wafer |