JPH0717333U - Vaporizer for volatile raw materials - Google Patents
Vaporizer for volatile raw materialsInfo
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- JPH0717333U JPH0717333U JP5362093U JP5362093U JPH0717333U JP H0717333 U JPH0717333 U JP H0717333U JP 5362093 U JP5362093 U JP 5362093U JP 5362093 U JP5362093 U JP 5362093U JP H0717333 U JPH0717333 U JP H0717333U
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- Prior art keywords
- raw material
- material liquid
- carrier gas
- gas
- tank
- Prior art date
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- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
(57)【要約】
【目的】 常温で液体である原料は、気相成長装置に気
体の状態で供給するためにバブラにおいてキャリヤガス
を吹き込み蒸気にして輸送する。バブラの原料ガスが減
少すると、キャリヤガスが液体をバブリングする領域が
薄くなり、キャリヤガス中に含まれる原料の濃度が低下
する。原料濃度が常に一定で飽和濃度であるようにする
ことが目的である。
【構成】 複数の容器に原料液体を入れ気密構造とし、
これを連結管で直列に連結する。これら直列のバブラに
キャリヤガスを順に通す。或いは一つの容器を隔壁で複
数の空間に仕切る。仕切った空間に原料液体を入れて、
気密構造にする。連結管でこれらを直列に連結して全て
にキャリヤガスを通す。キャリヤガスの中の原料濃度が
段階的に増加するので、最終的には飽和濃度にすること
ができる。
(57) [Summary] [Purpose] A raw material that is liquid at room temperature is transported as a vapor by injecting a carrier gas in a bubbler in order to supply it to a vapor phase growth apparatus in a gaseous state. When the source gas of the bubbler decreases, the region where the carrier gas bubbles the liquid becomes thin, and the concentration of the source material contained in the carrier gas decreases. The purpose is to ensure that the raw material concentration is always constant and saturated. [Constitution] The raw material liquid is put into a plurality of containers to form an airtight structure,
This is connected in series with a connecting pipe. Carrier gas is sequentially passed through these series bubblers. Alternatively, one container is divided into a plurality of spaces by partition walls. Put the raw material liquid in the partitioned space,
Use an airtight structure. These are connected in series with a connecting pipe to pass a carrier gas through all. Since the raw material concentration in the carrier gas increases stepwise, it is possible to finally reach the saturated concentration.
Description
【０００１】[0001]
この考案は気相エピタキシャル成長装置やＣＶＤ装置において用いられる原料 ガスのバブリング装置の改良に関する。ＣＶＤ法は化学的気相成長法とも言われ る。加熱した基板の上に原料を気体の状態で導き、気相反応を起こさせ、反応生 成物を基板の上に堆積せて薄膜を成長させる方法である。気相成長装置には大別 して２つの装置がある。ガスが上から下へ流れる縦型の気相成長装置と、ガスが 横から水平方向に流れる横型の気相成長装置である。本考案はいずれの装置にも 適用できる。 The present invention relates to an improvement of a bubbling apparatus for raw material gas used in a vapor phase epitaxial growth apparatus and a CVD apparatus. The CVD method is also called a chemical vapor deposition method. This is a method in which a raw material is introduced in a gaseous state onto a heated substrate to cause a gas phase reaction, and a reaction product is deposited on the substrate to grow a thin film. There are roughly two types of vapor phase growth equipment. A vertical type vapor phase growth apparatus in which gas flows from top to bottom and a horizontal type vapor phase growth apparatus in which gas flows from horizontal to horizontal. The present invention can be applied to any device.
【０００２】[0002]
気相成長であるので、原料は気体の状態で与える必要がある。単体で気体であ る原料の場合はそのまま流せば良い。しかし単体で気体でない原料の場合は、気 体にするために沸点の低い化合物にする必要がある。原料が金属の場合は、これ を有機金属にして気相成長装置に供給することが多い。Ｇａ、Ａｌ、Ｚｎ、Ｃｄ などの金属は、ＴＥＧ（トリエチルガリウム）、ＴＥＡ（トリエチルアルミニウ ム）、ＴＭＺ（トリメチルＺｎ）、などの有機金属とする。 Since it is vapor phase growth, it is necessary to give the raw material in a gaseous state. In the case of a raw material that is a gas alone, it can be flowed as it is. However, in the case of a raw material that is not a gas by itself, it is necessary to use a compound with a low boiling point to turn it into a gas. When the raw material is a metal, it is often supplied as an organic metal to a vapor phase growth apparatus. Metals such as Ga, Al, Zn, and Cd are organic metals such as TEG (triethylgallium), TEA (triethylaluminum), and TMZ (trimethyl Zn).
【０００３】 これらの有機金属原料は常温で液体である。これを気体にするためにバブラを 用いる。バブラは図１に示すように、原料液体を収容した容器２、これを被蓋す る蓋３を持つ。これに原料液体４が収容されている。蓋３を上から下へ貫いて、 キャリヤガス導入管５とガス流出管６とを設ける。ガス流出管６は気相成長装置 （図示せず）に接続される。These organometallic raw materials are liquid at room temperature. A bubbler is used to turn this into gas. As shown in FIG. 1, the bubbler has a container 2 containing a raw material liquid and a lid 3 for covering the same. The raw material liquid 4 is stored in this. A carrier gas introduction pipe 5 and a gas outflow pipe 6 are provided through the lid 3 from the top to the bottom. The gas outflow pipe 6 is connected to a vapor phase growth device (not shown).
【０００４】 キャリヤガス導入管５は水素ガスボンベとつながっている。キャリヤガス導入 管５の終端部はバブラ１の原料液体４の中に漬かっている。容器２の上方空間は 気相空間８になっている。ここには原料ガスの蒸気が存在する。ガス流出管６の 始端は容器２の気相空間８に開口している。The carrier gas introduction pipe 5 is connected to a hydrogen gas cylinder. The end portion of the carrier gas introduction pipe 5 is immersed in the raw material liquid 4 of the bubbler 1. The upper space of the container 2 is a vapor space 8. The source gas vapor is present here. The starting end of the gas outflow pipe 6 is open to the gas phase space 8 of the container 2.
【０００５】 キャリヤガスは、キャリヤガス導入管５から原料液体４の中へ勢いよく吹き込 まれ、原料液体４を強く泡立たせる。大きい気泡９がキャリヤガス導入管５の開 口部から吹き上げられる。これにより原料液体が激しく攪乱される。ために原料 液体が細かい粒子となって気相空間８に舞い上がる。気相空間の蒸気圧が高まり 飽和に近くなる。この状態で、原料を含むキャリヤガスがガス流出管６から出て ゆく。これが気相成長装置に入り、薄膜気相成長を行なう。原料液体を泡立たせ て蒸気にするのでバブラというのである。また蒸気圧が変動してはいけないので 、バブラは恒温槽に入れてあり、温度が変化しないようにしてある。The carrier gas is vigorously blown into the raw material liquid 4 from the carrier gas introduction pipe 5, and the raw material liquid 4 is strongly bubbled. Large bubbles 9 are blown up from the opening of the carrier gas introducing pipe 5. This violently disturbs the raw material liquid. Therefore, the raw material liquid becomes fine particles and soars into the gas phase space 8. The vapor pressure in the vapor phase space increases and approaches saturation. In this state, the carrier gas containing the raw material flows out from the gas outflow pipe 6. This enters the vapor phase growth apparatus to perform thin film vapor phase growth. It is called a bubbler because the raw material liquid is bubbled into steam. Also, since the vapor pressure must not fluctuate, the bubbler is placed in a constant temperature bath so that the temperature does not change.
【０００６】[0006]
従来の構造では、原料液体が減少してくると、液面が低くなり、キャリヤガス を吹き込んでも直ぐに上部の気相空間８に出てしまう。キャリヤガスが液中にあ る時間が短いので、十分に原料が気化されない。ために飽和に達せず、未飽和の ままキャリヤガスがガス流出管６を通って出てゆくことになる。キャリアガスに 含まれる原料濃度が低くなり、これにより気相成長を行なうと、膜圧や、組成が 所望のものにならない。つまり成長膜圧や、組成がばらついてきて、再現性が乏 しくなる。このような難点を克服し、原料液体が減少してもキャリヤガスは常に 飽和濃度の原料液体を含むようにした気化装置を提供することが本考案の目的で ある。 In the conventional structure, when the raw material liquid decreases, the liquid level becomes low, and even if the carrier gas is blown, it immediately comes out to the upper vapor phase space 8. Since the carrier gas remains in the liquid for a short time, the raw material is not sufficiently vaporized. As a result, the carrier gas does not reach saturation, and the carrier gas remains unsaturated and flows out through the gas outflow pipe 6. The concentration of the raw material contained in the carrier gas becomes low, and if vapor phase growth is carried out by this, the film pressure and composition will not be as desired. That is, the reproducibility becomes poor due to variations in the growth film pressure and composition. It is an object of the present invention to overcome such difficulties and provide a vaporizer in which the carrier gas always contains a saturated concentration of the raw material liquid even if the raw material liquid decreases.
【０００７】[0007]
本考案の気化装置は、原料液体槽を複数段直列に並べこれを連結管で連絡し、 キャリヤガスが何回も原料液体を通りこれを気化してゆくようにする。連絡管の 入口は前段の原料液体槽の気相空間に開口し、出口は次段の原料液体槽の原料液 体の中に開口する。 In the vaporizer of the present invention, a plurality of raw material liquid tanks are arranged in series and connected by connecting pipes so that the carrier gas passes through the raw material liquid many times and is vaporized. The inlet of the connecting pipe opens into the vapor phase space of the raw material liquid tank of the previous stage, and the outlet opens into the raw material liquid of the raw material liquid tank of the next stage.
【０００８】[0008]
複数の原料液体槽を直列につなぐので、同じキャリヤガスが何回も原料液体を 通過しこれをバブリングしてゆく。ひとつの原料液体槽の原料液体が減少して、 この原料液体槽でのバブリングが弱くなったとしても、他の原料液体槽を通るう ちに原料液体の濃度が飽和に達する。気相空間の圧力は少しずつ減少してゆくが 。最後の原料液体槽を出たあとの圧力を一定にするために、最後の原料液体槽の あとに圧力計を設けてモニタするようにしてもよい。これにより原料が減少して も、最終的なキャリヤガスは飽和蒸気圧に等しい蒸気圧の原料を含むようになる 。キャリヤガス中の原料の濃度が一定し、これを気相成長装置へ導いて原料ガス として吹き込むようにすれば成長薄膜の膜厚や組成に関して再現性が良くなる。 Since multiple raw material liquid tanks are connected in series, the same carrier gas passes through the raw material liquid many times and bubbles this. Even if the raw material liquid in one raw material liquid tank decreases and bubbling in this raw material liquid tank becomes weaker, the concentration of the raw material liquid reaches a saturation level after passing through the other raw material liquid tanks. Although the pressure in the vapor phase space gradually decreases. A pressure gauge may be provided after the last raw material liquid tank to monitor the pressure so that the pressure after the last raw material liquid tank is kept constant. As a result, even if the raw material is reduced, the final carrier gas contains the raw material having a vapor pressure equal to the saturated vapor pressure. If the concentration of the raw material in the carrier gas is constant and this is introduced into the vapor phase growth apparatus and blown as the raw material gas, the reproducibility of the thickness and composition of the grown thin film is improved.
【０００９】[0009]
本考案の気化装置は図２に例を示すように、複数の原料液体槽を設けて、キャ リヤガスをこれらの原料液体槽に順に通すようにする。図２は原料液体槽の数が ２つの場合を示している。この例では原料液体４を収容したひとつの容器２の内 部を隔壁１１で仕切っている。第１槽ｗ1 と第２槽Ｗ2 が出来る。隔壁１１は両 方の空間を完全に仕切っており、上方の気相空間８も別異のものであり、液面の 高さも異なる。容器２は蓋３で被蓋されており、隔壁１１があるので、第１槽Ｗ 1 と第２槽Ｗ2 は独立の空間である。 As shown in FIG. 2, the vaporizer of the present invention is provided with a plurality of raw material liquid tanks, and carrier gas is passed through these raw material liquid tanks in order. FIG. 2 shows a case where the number of raw material liquid tanks is two. In this example, the inside of one container 2 containing the raw material liquid 4 is partitioned by a partition wall 11. First tank w1 And the second tank W2 Can be done. The partition wall 11 completely partitions both spaces, the upper vapor phase space 8 is also different, and the height of the liquid surface is also different. Since the container 2 is covered by the lid 3 and has the partition wall 11, the first tank W 1 And the second tank W2 Is an independent space.
【００１０】 キャリヤガス導入管５が、第１槽Ｗ1 の原料液Ｅ2 の中に挿入されている。こ れは外部のボンベに連結しておりキャリヤガスを導入するためのものである。キ ャリヤガス導入管５の下端は、液面より下にある。Ｊ字型の上に彎曲した連結管 １０が、第１槽Ｗ1 と第２槽Ｗ2 を連結するために設けられる。連結管１０の入 口は第１槽Ｗ2 の気相空間に開口する。連結管１０の出口は第２槽Ｗ2 の原料液 体Ｅ2 の中に開口している。ガス流出管６は第２槽Ｗ2 の気相空間８に開口して いる。ここから気相成長装置の方へと原料を飽和濃度まで含む原料ガスを送給す ることになる。The carrier gas introducing pipe 5 is inserted into the raw material liquid E 2 in the first tank W 1 . This is connected to an external cylinder and is for introducing a carrier gas. The lower end of the carrier gas introduction pipe 5 is below the liquid level. A J-shaped curved connecting pipe 10 is provided to connect the first tank W 1 and the second tank W 2 . The inlet of the connecting pipe 10 opens into the gas phase space of the first tank W 2 . The outlet of the connecting pipe 10 opens into the raw material liquid E 2 in the second tank W 2 . The gas outflow pipe 6 is open to the gas phase space 8 of the second tank W 2 . From here, the source gas containing the source up to the saturated concentration is sent to the vapor phase growth apparatus.
【００１１】 第１槽Ｗ1 の気相空間の圧力Ｐ1 は第２槽Ｗ2 の圧力Ｐ2 よりも高い（Ｐ1 ＞ Ｐ2 ）。連結管１０の第２槽Ｗ2 の液中Ｅ2 に漬かっている深さ分以上、圧力が 高くなければ第１槽Ｗ1 から第２槽Ｗ2 へキャリヤガスが流れないからである。 圧力計１３をガス流出管６に設けておくと、Ｐ2 をモニタすることができる。こ れを所定の値にするようにガスボンベからのガスの圧力や流速を調整すれば、気 相成長装置には一定圧力、一定濃度の原料ガスを送り込むことができる。The pressure P 1 in the vapor phase space of the first tank W 1 is higher than the pressure P 2 of the second tank W 2 (P 1 > P 2 ). This is because the carrier gas does not flow from the first tank W 1 to the second tank W 2 unless the pressure is higher than the depth of immersion in the liquid E 2 of the second tank W 2 of the connecting pipe 10. If the pressure gauge 13 is provided in the gas outflow pipe 6, P 2 can be monitored. If the pressure and flow velocity of the gas from the gas cylinder are adjusted so that this is a predetermined value, it is possible to feed a source gas of constant pressure and constant concentration into the vapor phase growth apparatus.
【００１２】 第１槽Ｗ1 で飽和に達しなくても、第２槽Ｗ2 でバブリングした時には飽和に 到達する。連絡管１０でも原料の濃度をＭ1 とし、ガス流出管６の原料濃度をＭ 2 とする。当然Ｍ1 ＜Ｍ2 である。しかし第１槽Ｗ1 での原料液体の蒸発の方が 、第２槽Ｗ2 での原料液体の蒸発よりも勢いがあるので、第１槽Ｗ1 の原料液体 の減少の方が第２槽Ｗ2 の原料液体の減少よりも速いであろう。この場合は、第 １槽Ｗ1 をより広くすれば良い。First tank W1 Even if it does not reach saturation in the second tank W2 When bubbling at, it reaches saturation. Even in the connecting pipe 10, the concentration of the raw material is M1 And the raw material concentration of the gas outflow pipe 6 is M 2 And Naturally M1 <M2 Is. But the first tank W1 The evaporation of the raw material liquid in the second tank W2 Since it has more momentum than the evaporation of the raw material liquid in1 The decrease in the raw material liquid of the second tank W2 It will be faster than the reduction of the raw material liquid. In this case, the first tank W1 Should be wider.
【００１３】 ここでは槽の数が２であるが、槽は適当な複数個（Ｎ個）設ければ良い。ここ ではひとつの容器を隔壁で分割しているが、そうではなくて容器ごと分離してい ても差し支えない。前段の槽の気相空間に連結管１０の入口があり、次段の原料 液体中に連結管１０の出口がある。濃度は、Ｍ1 ＜Ｍ2 ＜…＜ＭN 、というよう に増大してゆく。原料液体の量が少なくなってきても、必ず飽和濃度に達するよ うにできる。Although the number of tanks is two here, it is sufficient to provide an appropriate plurality (N) of tanks. Here, one container is divided by a partition wall, but it is also possible to separate each container instead. The inlet of the connecting pipe 10 is in the vapor phase space of the tank in the previous stage, and the outlet of the connecting pipe 10 is in the raw material liquid in the next stage. The concentration increases as M 1 <M 2 <... <M N. Even if the amount of raw material liquid becomes small, it is possible to always reach the saturated concentration.
【００１４】[0014]
本考案の気化装置は、複数の閉じられた原料液体槽を連結管により直列に接続 する。キャリヤガスは第１段から順に原料液体槽をバブリングしながら進行して ゆく、１回のバブリングでかなりの原料蒸気を含むようになる。複数個の原料液 体槽を通すので、キャリヤガス中の原料の密度が１段ずつ高まってゆく。やがて 飽和濃度に達する。飽和濃度の原料液体を含むキャリヤガスが薄膜気相成長装置 に供給されるので、薄膜形成を行なう場合に膜圧や組成が変動しない。一定の膜 圧、品質の薄膜を再現性よく製造することができる。 The vaporizer of the present invention connects a plurality of closed raw material liquid tanks in series by connecting pipes. The carrier gas progresses while bubbling the raw material liquid tank in order from the first stage, and a considerable amount of raw material vapor is contained in one bubbling. Since a plurality of raw material liquid tanks are passed through, the density of the raw material in the carrier gas increases step by step. Saturation concentration is reached soon. Since the carrier gas containing the raw material liquid with a saturated concentration is supplied to the thin film vapor deposition apparatus, the film pressure and composition do not change when forming a thin film. It is possible to manufacture a thin film with constant film pressure and quality with good reproducibility.
【図１】従来例に係るバブラの縦断面図。FIG. 1 is a vertical cross-sectional view of a bubbler according to a conventional example.
【図２】本考案の実施例に係るバブラの縦断面図。FIG. 2 is a vertical sectional view of a bubbler according to an embodiment of the present invention.
１ バブラ ２ 容器 ３ 蓋 ４ 原料液体 ５ キャリヤガス導入管 ６ ガス流出管 ８ 気相空間 ９ 気泡 １０ 連結管 １１ 隔壁 １３ 圧力計 1 Bubbler 2 Container 3 Lid 4 Raw Material Liquid 5 Carrier Gas Introducing Pipe 6 Gas Outflow Pipe 8 Gas Phase Space 9 Bubble 10 Connecting Pipe 11 Partition Wall 13 Pressure Gauge
Claims (2)
スを吹き込むことにより蒸気としてキャリヤガスに含ま
せて輸送するための気化装置であって、原料液体を収容
する容器と、容器を気密に被蓋し上方に気相空間を形成
する蓋と、容器を複数の領域に分割するひとつ以上の隔
壁と、隔壁で仕切られた原料液体槽同士を直列に連結す
る連結管と、第１の原料液体槽にキャリヤガスを吹き込
むキャリヤガス導入管と、最終の原料液体槽からガスを
取り出すガス流出管とを含み、連絡管は前段の原料液体
槽の気相空間と次段の原料液体を連絡するようにしてあ
り、キャリヤガスはすべての原料液体槽を順次通過し、
原料液体濃度を高めるようにしたことを特徴とする揮発
性原料の気化装置。1. A vaporizer for transporting a raw material liquid, which is liquid at room temperature, by injecting a carrier gas so that the raw material liquid is contained in the carrier gas as a vapor, and the container holds the raw material liquid and the container is hermetically sealed. A lid that covers and forms a vapor phase space above, one or more partition walls that divide the container into a plurality of regions, a connecting pipe that connects the source liquid tanks partitioned by the partition walls in series, and the first source liquid It includes a carrier gas inlet pipe for blowing carrier gas into the tank and a gas outflow pipe for taking out gas from the final raw material liquid tank.The connecting pipe connects the vapor phase space of the raw material liquid tank of the previous stage and the raw material liquid of the next stage. And the carrier gas sequentially passes through all the raw material liquid tanks,
A vaporizer for volatile raw materials, characterized in that the raw material liquid concentration is increased.
スを吹き込むことにより蒸気としてキャリヤガスに含ま
せて輸送するための気化装置であって、原料液体を収容
する容器と、容器を気密に被蓋し上方に気相空間を形成
する蓋とよりなる複数の原料液体槽と、複数の原料液体
槽を直列に連結するための連絡管と、第１の原料液体槽
にキャリヤガスを吹き込むキャリヤガス導入管と、最終
の原料液体槽からガスを取り出すガス流出管とを含み、
連絡管は前段の原料液体槽の気相空間と次段の原料液体
を連絡するようにしてあり、キャリヤガスはすべての原
料液体槽を順次通過し、原料液体濃度を高めるようにし
たことを特徴とする揮発性原料の気化装置。2. A vaporizer for transporting a raw material liquid which is a liquid at room temperature by injecting a carrier gas so as to be contained in the carrier gas as vapor and transporting the raw material liquid, and a container for hermetically sealing the container. A plurality of raw material liquid tanks each having a lid and forming a vapor phase space above, a connecting pipe for connecting the plurality of raw material liquid tanks in series, and a carrier gas for blowing a carrier gas into the first raw material liquid tank Including an introduction pipe and a gas outflow pipe for extracting gas from the final raw material liquid tank,
The connecting pipe is designed to connect the vapor phase space of the raw material liquid tank in the previous stage and the raw material liquid in the next stage, and the carrier gas passes through all the raw material liquid tanks in order to increase the concentration of the raw material liquid. Vaporizer for volatile raw materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5362093U JPH0717333U (en) | 1993-09-07 | 1993-09-07 | Vaporizer for volatile raw materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5362093U JPH0717333U (en) | 1993-09-07 | 1993-09-07 | Vaporizer for volatile raw materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0717333U true JPH0717333U (en) | 1995-03-28 |
Family
ID=12947956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5362093U Pending JPH0717333U (en) | 1993-09-07 | 1993-09-07 | Vaporizer for volatile raw materials |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0717333U (en) |
-
1993
- 1993-09-07 JP JP5362093U patent/JPH0717333U/en active Pending
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