JPH07169990A - Optical receiver - Google Patents
Optical receiverInfo
- Publication number
- JPH07169990A JPH07169990A JP5313175A JP31317593A JPH07169990A JP H07169990 A JPH07169990 A JP H07169990A JP 5313175 A JP5313175 A JP 5313175A JP 31317593 A JP31317593 A JP 31317593A JP H07169990 A JPH07169990 A JP H07169990A
- Authority
- JP
- Japan
- Prior art keywords
- photodiode
- receiving
- substrate
- pad
- reception
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、赤外線リモコン信号
などの光信号を電気信号に変換する光受信装置に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical receiver for converting an optical signal such as an infrared remote control signal into an electric signal.
【０００２】[0002]
【従来の技術】電子回路は、外来ノイズで誤動作しない
ことが求められており、特に高い耐ノイズ性が求められ
るときには、金属ケースをかぶせてシールドを施すこと
が一般的に行われている。しかしながら、光受信装置に
おいては、少なくとも受光部は開口でなければならず、
金属で覆うことができないため、シールド効果が不完全
であった。2. Description of the Related Art Electronic circuits are required not to malfunction due to external noise, and in general, when high noise resistance is required, a metal case is generally covered to provide a shield. However, in the light receiving device, at least the light receiving portion must be an opening,
The shielding effect was imperfect because it could not be covered with metal.
【０００３】これを顧みて、図９に示すものが提案され
た（特開昭６３−１３６８３８号公報）。同図におい
て、パッケージ１内に、受信ＩＣ３、フォトダイオード
（以下「ＰＤ」という）１６および両者をマウントした
リードフレーム４があり、ＰＤ１６の出力パッド８と受
信ＩＣ３の入力パッド９をパッケージ１内でボンディン
グワイヤ２で接続している。受信ＩＣ３の出力パッドは
ワイヤを介して出力リード５から出力ピン１０に接続し
ている。さらに、接地ピン７がワイヤを介してＰＤ１６
と受信ＩＣ３のパッドに接続されている。この従来の光
受信装置によれば、信号線が短いので、外来ノイズを受
けにくいという特徴があった。In consideration of this, the one shown in FIG. 9 has been proposed (Japanese Patent Laid-Open No. 63-136838). In FIG. 1, there is a receiving IC 3, a photodiode (hereinafter referred to as “PD”) 16 and a lead frame 4 mounting both of them in a package 1, and an output pad 8 of the PD 16 and an input pad 9 of the receiving IC 3 are provided in the package 1. It is connected by the bonding wire 2. The output pad of the reception IC 3 is connected from the output lead 5 to the output pin 10 via a wire. Further, the ground pin 7 is connected to the PD 16 via a wire.
And to the pad of the receiving IC3. According to this conventional optical receiving device, the signal line is short, so that it is difficult to receive external noise.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、リモコ
ン信号の到達距離を延ばしたりするために、さらに増幅
器ゲインを上げることが求められており、さらに耐ノイ
ズ性を向上することが必要になってきている。この発明
は上記課題を解決するもので、耐外来ノイズ性に優れた
光受信装置を提供することを目的としている。However, in order to extend the reaching distance of the remote control signal, it is required to further increase the amplifier gain, and it is necessary to further improve the noise resistance. . The present invention solves the above problems, and an object thereof is to provide an optical receiver having excellent resistance to external noise.
【０００５】[0005]
【課題を解決するための手段】請求項１記載の光受信装
置は、フォトダイオードの基板を受信ＩＣの基板と同一
導電型としたことを特徴とする。請求項２記載の光受信
装置は、請求項１記載の光受信装置において、フォトダ
イオードの表面に、フォトダイオードの基板と同一導電
型の拡散層によるシールド層を設けている。An optical receiving device according to a first aspect of the present invention is characterized in that the substrate of the photodiode is of the same conductivity type as the substrate of the receiving IC. According to a second aspect of the present invention, there is provided the optical receiver of the first aspect, wherein the surface of the photodiode is provided with a shield layer made of a diffusion layer having the same conductivity type as that of the substrate of the photodiode.
【０００６】請求項３記載の光受信装置は、請求項１記
載の光受信装置において、光受信装置の出力ピンとフォ
トダイオードの間に受信ＩＣを配置している。請求項４
記載の光受信装置は、請求項１記載の光受信装置におい
て、フォトダイオードの前面のパッケージ上にレンズを
設けるとともに、フォトダイオードの厚みを受信ＩＣの
厚みより薄くしている。According to a third aspect of the present invention, in the optical receiver of the first aspect, a receiving IC is arranged between the output pin of the optical receiver and the photodiode. Claim 4
The described optical receiving device is the optical receiving device according to claim 1, in which a lens is provided on the front package of the photodiode and the thickness of the photodiode is smaller than the thickness of the receiving IC.
【０００７】請求項５記載の光受信装置は、請求項１記
載の光受信装置において、フォトダイオードの出力パッ
ドおよび受信ＩＣの入力パッドのうち少なくとも一方を
ワイヤボンダのキャピラリ径より大きくし、キャピラリ
径より大きいパッドを２次側とし、他方のパッドを１次
側として、両パッドをボンディングワイヤで接続してい
る。According to a fifth aspect of the present invention, there is provided the optical receiver according to the first aspect, wherein at least one of the output pad of the photodiode and the input pad of the reception IC is larger than the capillary diameter of the wire bonder. Both pads are connected by bonding wires with the large pad serving as the secondary side and the other pad serving as the primary side.
【０００８】[0008]
【作用】請求項１記載の構成によれば、プラス電源で動
作させる場合、受信ＩＣはＰ型基板を用いるので、フォ
トダイオードもＰ型基板となり、リードフレームをグラ
ンドに接続したとき、Ｐ型基板が０Ｖになる。よって、
フォトダイオードのＮ層・基板間は逆バイアスとなり、
Ｎ層とグランドは絶縁される。マイナス電源で動作させ
る場合には、受信ＩＣはＮ型基板を用いるので、フォト
ダイオードもＮ型基板になり、プラス電源のときと同じ
考え方により、Ｐ層とグランドは絶縁される。いずれの
場合でも、リードフレームをグランドに接続してシール
ド効果を持たせることができる。According to the structure described in claim 1, since the receiving IC uses the P-type substrate when operating with a positive power source, the photodiode also serves as the P-type substrate, and when the lead frame is connected to the ground, the P-type substrate is used. Becomes 0V. Therefore,
There is a reverse bias between the N layer of the photodiode and the substrate,
The N layer and the ground are insulated. When operating with a negative power source, the receiving IC uses an N-type substrate, so the photodiode also becomes an N-type substrate, and the P layer and the ground are insulated by the same idea as when the positive power source is used. In either case, the lead frame can be connected to the ground to provide a shielding effect.
【０００９】さらに請求項２記載の構成によれば、フォ
トダイオードの表面に設けたシールド層をリードフレー
ムとともにグランド電位にすることにより、フォトダイ
オードの受光部はグランドで取り囲まれることになり、
フォトダイオード内部に到達する外来ノイズをより低減
することができる。また請求項３記載の構成によれば、
光受信装置の出力ピンとフォトダイオードの間に受信Ｉ
Ｃを配置することにより、出力ピンとフォトダイオード
を遠く離すことができるので、出力ピンからフォトダイ
オードへの帰還が減少し、フォトダイオードに入る外来
ノイズをより低減することができる。Further, according to the second aspect of the invention, by setting the shield layer provided on the surface of the photodiode to the ground potential together with the lead frame, the light receiving portion of the photodiode is surrounded by the ground.
External noise reaching the inside of the photodiode can be further reduced. According to the configuration of claim 3,
Receive I between the output pin of the optical receiver and the photodiode
By disposing C, the output pin and the photodiode can be separated from each other, so that feedback from the output pin to the photodiode is reduced, and external noise entering the photodiode can be further reduced.
【００１０】また請求項４記載の構成によれば、フォト
ダイオードの厚みを受信ＩＣの厚みより薄くすることに
より、レンズの焦点距離を長く設定でき、レンズの集光
効率を向上させてフォトダイオードに入射する信号光量
を増すことができるので、信号・ノイズ比（ＳＮＲ）を
改善することができ、相対的にノイズを低減することが
できる。According to the fourth aspect of the present invention, by making the thickness of the photodiode thinner than the thickness of the receiving IC, the focal length of the lens can be set longer, and the light collection efficiency of the lens can be improved to form the photodiode. Since the amount of incident signal light can be increased, the signal / noise ratio (SNR) can be improved, and noise can be relatively reduced.
【００１１】また請求項５記載の構成によれば、ワイヤ
ボンダのキャピラリ径より大きいパッドを２次側とし、
他方のパッドを１次側とすることにより、ワイヤボンデ
ィングの２次側において、パッドの方が圧着されたワイ
ヤ端より大きいため、２次側ワイヤ端がアルミ配線等の
他の回路部と接触することがなくなり、信頼性の高い組
立が実現できる。According to a fifth aspect of the present invention, the pad having a diameter larger than the capillary diameter of the wire bonder is used as the secondary side,
By making the other pad the primary side, the pad on the secondary side of the wire bonding is larger than the crimped wire end, so the secondary side wire end comes into contact with other circuit parts such as aluminum wiring. It is possible to realize highly reliable assembly.
【００１２】[0012]
【実施例】以下、この発明の実施例について、図面を参
照しながら説明する。なお、ＩＣ基板はＰ型、電源はプ
ラス電源であるのが一般的なので、この場合について説
明する。 〔第１の実施例〕図１はこの発明の第１の実施例の光受
信装置の構成を示す断面図、図２は受信回路に用いる増
幅回路例を示す回路図である。Embodiments of the present invention will be described below with reference to the drawings. Since the IC substrate is generally a P type and the power source is a positive power source, this case will be described. [First Embodiment] FIG. 1 is a sectional view showing the arrangement of an optical receiving apparatus according to the first embodiment of the present invention, and FIG. 2 is a circuit diagram showing an example of an amplifier circuit used in a receiving circuit.
【００１３】この光受信装置は、受信ＩＣ３およびＰＤ
（フォトダイオード）６ａを近接してリードフレーム４
上にマウントし、ＰＤ６ａの出力パッド８と受信ＩＣ３
の入力パッド９をワイヤ２で接続し、樹脂パッケージ
（図示せず）で全体をモールドしている。ＰＤ６ａと受
信ＩＣ３を近接して設置することにより、ワイヤ２すな
わち受信ＩＣ入力につながる配線の長さを短くでき、ノ
イズを受信しにくくしたものである。This optical receiver comprises a receiving IC 3 and a PD.
(Photodiode) 6a close to the lead frame 4
Mounted on top, PD6a output pad 8 and receiver IC3
Input pad 9 is connected by a wire 2, and the whole is molded with a resin package (not shown). By disposing the PD 6a and the receiving IC 3 in close proximity to each other, the length of the wire 2, that is, the wiring connected to the input of the receiving IC can be shortened to make it difficult to receive noise.
【００１４】この実施例の特徴は、図１に示すように、
ＰＤ６ａの基板１２を、受信ＩＣ３の基板１１と同一導
電型のＰ型としたことである。ＰＤ６ａは、Ｐ型基板１
２上にＮ層１３を設け、Ｐ型基板１２をアノード、Ｎ層
１３をカソードとしている。ＰＮ接合部１４が受光機能
をもち、ここに光が入射すると電流が発生する。なお、
ＩＣの断面構造については多くの文献（例えば、アナロ
グ集積回路、近代科学社）で解説されているので、ここ
では省略する。また、簡単のためアルミ配線は省略し、
トランジスタはＱ1 だけ例示した。The feature of this embodiment is that, as shown in FIG.
The substrate 12 of the PD 6a is of the same conductivity type as the substrate 11 of the receiving IC 3 and is of P type. PD 6a is a P-type substrate 1
An N layer 13 is provided on the second layer 2, and the P-type substrate 12 serves as an anode and the N layer 13 serves as a cathode. The PN junction portion 14 has a light receiving function, and when light is incident on this portion, a current is generated. In addition,
Since the cross-sectional structure of the IC is explained in many documents (for example, analog integrated circuit, Modern Science Co., Ltd.), it is omitted here. Also, for simplicity, omit aluminum wiring,
For the transistor, only Q 1 is illustrated.
【００１５】図２において、ＰＤ６ａのアノードをグラ
ンド側として、増幅回路２１とグランド間に接続してい
る。ＰＤ６ａに光が入射したとき、光電流は帰還抵抗Ｒ
f を介して供給されるので、増幅回路出力２２のレベル
は上昇する。なお、Ｒ1 ，Ｒ 2 は抵抗、Ｑ2 はトランジ
スタであり、増幅回路２１の構成は特開昭５７−１４１
１６０号公報で紹介されたものと同一であるので、詳細
な説明は省略する。In FIG. 2, the anode of PD6a is shown as a graph.
It is connected between the amplifier circuit 21 and the ground on the ground side.
It When light is incident on the PD 6a, the photocurrent is returned to the feedback resistor R
fSince it is supplied via the
Rises. In addition, R1, R 2Is resistance, Q2Is a transition
And the structure of the amplifier circuit 21 is disclosed in JP-A-57-141.
Since it is the same as that introduced in Japanese Patent No. 160, the details
Detailed description is omitted.
【００１６】この実施例では、プラス電源を用い、リー
ドフレーム４をグランドに接続してＰＤ６ａのＰ型基板
１２を０Ｖにしたとき、Ｐ型基板１２・Ｎ層１３間は逆
バイアス状態になり、Ｎ層１３とグランドは絶縁され
る。したがって、リードフレーム４をグランドに接続
し、電磁シールドとして利用できるため、ＰＤ６ａや受
信ＩＣ３に飛び込む外来ノイズを低減することができ
る。In this embodiment, when the lead frame 4 is connected to the ground and the P-type substrate 12 of the PD 6a is set to 0 V, a reverse bias is applied between the P-type substrate 12 and the N layer 13 in this embodiment. The N layer 13 and the ground are insulated. Therefore, since the lead frame 4 can be connected to the ground and used as an electromagnetic shield, it is possible to reduce external noise that jumps into the PD 6a and the reception IC 3.
【００１７】〔第２の実施例〕図３，図４はそれぞれこ
の発明の第２の実施例の光受信装置に用いるＰＤの断面
図および平面図である。この実施例の光受信装置は、第
１の実施例と同様、ＰＤ６ｂの基板１２を、受信ＩＣ３
の基板１１（図１参照）と同じＰ型としてあり、さら
に、ＰＤ６ｂの表面に基板１２と同じＰ型の導電性をも
つシールド層３１を設けている。すなわち、ＰＤ６ｂは
Ｐ型基板１２にＮ層１３を拡散した後、さらにＰ型の導
電性をもつシールド層３１が拡散されている。このシー
ルド層３１はアルミ配線３２を介して図４のシールドパ
ッド４１と接続されている。[Second Embodiment] FIGS. 3 and 4 are a sectional view and a plan view of a PD used in an optical receiver according to a second embodiment of the present invention. In the optical receiver of this embodiment, the substrate 12 of the PD 6b is connected to the receiving IC 3 as in the first embodiment.
Of the substrate 11 (see FIG. 1), and a shield layer 31 having the same P-type conductivity as the substrate 12 is provided on the surface of the PD 6b. That is, in the PD 6b, after the N layer 13 is diffused in the P type substrate 12, the shield layer 31 having P type conductivity is further diffused. The shield layer 31 is connected to the shield pad 41 of FIG. 4 via the aluminum wiring 32.
【００１８】パッド４１をワイヤボンディングで接地ピ
ン７（図９参照）と接続することによりシールド層３１
を０Ｖに固定することができる。また、特にグランドリ
ードと接続しなくても、基板１２とシールド層３１が電
気的に接触しており、基板１２が０Ｖであるから、シー
ルド層３１も０Ｖになる。この実施例によれば、ＰＮ接
合部１４がグランド電位で取り囲まれているので、ＰＤ
６ｂの内部に到達する外来ノイズをより低減することが
できる。The shield layer 31 is formed by connecting the pad 41 to the ground pin 7 (see FIG. 9) by wire bonding.
Can be fixed at 0V. Further, the substrate 12 and the shield layer 31 are in electrical contact with each other even if they are not connected to the ground lead, and the substrate 12 is at 0V, so that the shield layer 31 is also at 0V. According to this embodiment, since the PN junction 14 is surrounded by the ground potential, the PD
External noise reaching the inside of 6b can be further reduced.
【００１９】〔第３の実施例〕図５はこの発明の第３の
実施例の光受信装置の構成を示す平面図である。図５に
おいて、図１および図９と対応する部分には同一符号を
付している。この実施例の光受信装置は、ＰＤ６ａと出
力ピン（Ｖout ）１０の間に受信ＩＣ３を配置してい
る。ＰＤ６ａは図１に示す第１の実施例の構成と同様で
あり、受信ＩＣ３およびＰＤ６ａをリードフレーム４上
にマウントしている。なお、簡単のため、リードフレー
ム４と接地ピン７は共通とした。[Third Embodiment] FIG. 5 is a plan view showing the structure of an optical receiving apparatus according to the third embodiment of the present invention. 5, parts corresponding to those in FIGS. 1 and 9 are designated by the same reference numerals. In the optical receiver of this embodiment, the receiving IC 3 is arranged between the PD 6a and the output pin (V out ) 10. The PD 6a has the same configuration as that of the first embodiment shown in FIG. 1, and the receiving IC 3 and the PD 6a are mounted on the lead frame 4. For simplicity, the lead frame 4 and the ground pin 7 are common.
【００２０】赤外線リモコンでは、一般的に、１０ｍ程
度以上の長い到達距離が必要とされており、ＰＤ６ａか
ら得られる電流は１ｎＡ程度しかない。一方、出力ピン
１０には通常１ｍＡ程度の電流が流れるので、ＰＤ出力
電流からみれば、１００万倍の大電流である。したがっ
て、ＰＤ６ａと出力ピン１０が近接していると、出力ピ
ン１０からの誘導を受けて、ＰＤ６ａの出力のノイズが
多くなる。The infrared remote controller generally requires a long reach of about 10 m or more, and the current obtained from the PD 6a is only about 1 nA. On the other hand, since a current of about 1 mA normally flows through the output pin 10, the current is 1 million times as large as the PD output current. Therefore, when the PD 6a and the output pin 10 are close to each other, the noise from the output of the PD 6a increases due to the induction from the output pin 10.
【００２１】この実施例によれば、ＰＤ６ａと出力ピン
１０の間隔を図１のものより大きくとることができる。
しかも、受信ＩＣ３の入力パッド９をＰＤ６ａの近くに
設けるようにすれば、ワイヤ２の長さが長くなることも
ない。すなわち、ＰＤ６ａと出力ピン１０の間に受信Ｉ
Ｃ３を配置することにより、ＰＤ６ａと出力ピン１０と
の間隔を広げることができ、出力ピン１０からのＰＤ６
ａへの帰還が減少し、ＰＤ６ａに入る外来ノイズを、第
１の実施例に比べ、より低減することができる。According to this embodiment, the distance between the PD 6a and the output pin 10 can be made larger than that shown in FIG.
Moreover, if the input pad 9 of the reception IC 3 is provided near the PD 6a, the length of the wire 2 will not be long. That is, the reception I is between the PD 6a and the output pin 10.
By arranging C3, the distance between the PD 6a and the output pin 10 can be increased, and the PD 6 from the output pin 10 can be extended.
The feedback to a is reduced, and the external noise entering the PD 6a can be further reduced as compared with the first embodiment.
【００２２】〔第４の実施例〕図６はこの発明の第４の
実施例の光受信装置の構成を示す断面図である。この実
施例の受信装置は、パッケージ１のＰＤ前面部に半円状
のレンズ６１を設けるとともに、ＰＤ６ａのチップ厚み
ｔ1 を受信ＩＣ３のチップ厚みｔ2 より薄くしている。
その他の構成は、図１に示す第１の実施例と同様であ
る。[Fourth Embodiment] FIG. 6 is a sectional view showing the arrangement of an optical receiving apparatus according to the fourth embodiment of the present invention. In the receiver of this embodiment, a semicircular lens 61 is provided on the front surface of the PD of the package 1, and the chip thickness t 1 of the PD 6a is smaller than the chip thickness t 2 of the receiving IC 3.
Other configurations are similar to those of the first embodiment shown in FIG.
【００２３】この実施例によれば、ＰＤ６ａのチップ厚
みｔ1 を受信ＩＣ３のチップ厚みｔ 2 より小さくしたこ
とにより、レンズ６１の焦点距離を長く設定することが
でき、レンズ径を大きくとることができる。レンズ６１
が大きくなることにより、レンズ６１への入光量が増
え、ＰＤ６ａに入射する信号光量が増える。これによ
り、ＰＤ出力のＳＮＲが改善され、耐ノイズ性がより向
上する。According to this embodiment, the chip thickness of the PD 6a is
Only t1 Receiving IC3 chip thickness t 2 Smaller
With, the focal length of the lens 61 can be set longer.
Therefore, the lens diameter can be increased. Lens 61
Becomes larger, the amount of light entering the lens 61 increases.
However, the amount of signal light incident on the PD 6a increases. By this
The PD output SNR is improved, and noise resistance is improved.
Go up.
【００２４】また、第１ないし第４の実施例において、
図７の平面図に示すように、ＰＤ出力パッド８を受信Ｉ
Ｃ入力パッド９より大きくし、図８の断面図に示すよう
に、受信ＩＣ３を１次側、ＰＤ６（ＰＤ６ａまたはＰＤ
６ｂ）を２次側としてワイヤ２をボンディングしてもよ
い。すなわち、金ボール８１を受信ＩＣ入力パッド９に
熱圧着してワイヤ２の１次側の結線を行ない、ワイヤ２
の他端をＰＤ出力パッド８にキャピラリのエッジで圧着
して結線したものである。金ボール径は７０μｍ程度で
あるから受信ＩＣ入力パッド９のサイズは１００μｍ角
とし、ＰＤ出力パッド８のサイズは、ワイヤボンダのキ
ャピラリ径１５０μｍより大きい２００μｍ角としてい
る。In the first to fourth embodiments,
As shown in the plan view of FIG.
The input IC 3 is made larger than the C input pad 9, and as shown in the cross-sectional view of FIG.
The wire 2 may be bonded with 6b) as the secondary side. That is, the gold ball 81 is thermocompression-bonded to the reception IC input pad 9 to connect the primary side of the wire 2,
The other end is connected to the PD output pad 8 by crimping with the edge of the capillary. Since the gold ball diameter is about 70 μm, the size of the receiving IC input pad 9 is 100 μm square, and the size of the PD output pad 8 is 200 μm square, which is larger than the wire bonder capillary diameter of 150 μm.
【００２５】このように、キャピラリ径より大きいＰＤ
出力パッド８を２次側とし、他方の受信ＩＣ入力パッド
９を１次側として、ボンディングすることにより、ＰＤ
出力パッド８の方が圧着されたワイヤ端より大きいの
で、他のアルミ配線等の回路部と接触することが無くな
り、信頼性の高いワイヤボンディングが実現できる。な
お、受信ＩＣ３を２次側、ＰＤ６を１次側とし、受信Ｉ
Ｃ入力パッド９をキャピラリ径より大きくしてもよい。As described above, the PD larger than the capillary diameter is used.
By bonding the output pad 8 as the secondary side and the other receiving IC input pad 9 as the primary side, the PD
Since the output pad 8 is larger than the crimped wire end, it does not come into contact with other circuit parts such as aluminum wiring, so that highly reliable wire bonding can be realized. Note that the receiving IC 3 is the secondary side and the PD 6 is the primary side, and the receiving I
The C input pad 9 may be larger than the capillary diameter.
【００２６】なお、上記実施例ではプラス電源を用いた
場合について説明したが、マイナス電源を用いる場合に
は、受信ＩＣはＮ型基板を用いるので、ＰＤにもＮ型基
板を用いる。この場合も、プラス電源を用いた場合と同
様、ＰＤのＮ型基板に形成したＰ層とグランドは絶縁さ
れる。In the above embodiment, the case where the positive power source is used has been described. However, when the negative power source is used, since the receiving IC uses the N type substrate, the PD also uses the N type substrate. Also in this case, the P layer formed on the N-type substrate of the PD and the ground are insulated as in the case of using the positive power source.
【００２７】[0027]
【発明の効果】請求項１記載の光受信装置は、フォトダ
イオードおよび受信ＩＣをマウントしたリードフレーム
をグランドに接続することにより、リードフレームがシ
ールドとして働き、フォトダイオードや受信ＩＣに飛び
込む外来ノイズを低減することができる。According to the first aspect of the present invention, by connecting the lead frame mounting the photodiode and the receiving IC to the ground, the lead frame acts as a shield, and the external noise that jumps into the photodiode and the receiving IC is prevented. It can be reduced.
【００２８】さらに請求項２記載の構成によれば、フォ
トダイオードの表面に設けたシールド層をリードフレー
ムとともにグランド電位にすることにより、フォトダイ
オードの受光部はグランドで取り囲まれることになり、
フォトダイオード内部に到達する外来ノイズをより低減
することができる。また請求項３記載の光受信装置は、
光受信装置の出力ピンとフォトダイオードの間に受信Ｉ
Ｃを配置することにより、出力ピンとフォトダイオード
を遠く離すことができるので、出力ピンからフォトダイ
オードへの帰還が減少し、フォトダイオードに入る外来
ノイズをより低減することができる。Further, according to the second aspect of the invention, by setting the shield layer provided on the surface of the photodiode to the ground potential together with the lead frame, the light receiving portion of the photodiode is surrounded by the ground.
External noise reaching the inside of the photodiode can be further reduced. The optical receiver according to claim 3 is
Receive I between the output pin of the optical receiver and the photodiode
By disposing C, the output pin and the photodiode can be separated from each other, so that feedback from the output pin to the photodiode is reduced, and external noise entering the photodiode can be further reduced.
【００２９】また請求項４記載の光受信装置は、フォト
ダイオードの厚みを受信ＩＣの厚みより薄くすることに
より、レンズの焦点距離を長く設定でき、レンズの集光
効率を向上させてフォトダイオードに入射する信号光量
を増すことができるので、信号・ノイズ比（ＳＮＲ）を
改善することができ、相対的にノイズを低減することが
できる。Further, in the optical receiving device according to the fourth aspect, the focal length of the lens can be set longer by making the thickness of the photodiode thinner than the thickness of the receiving IC, and the light collecting efficiency of the lens can be improved to form the photodiode. Since the amount of incident signal light can be increased, the signal / noise ratio (SNR) can be improved, and noise can be relatively reduced.
【００３０】また請求項５記載の光受信装置は、ワイヤ
ボンダのキャピラリ径より大きいパッドを２次側とし、
他方のパッドを１次側とすることにより、ワイヤボンデ
ィングの２次側において、パッドの方が圧着されたワイ
ヤ端より大きいため、２次側ワイヤ端がアルミ配線等の
他の回路部と接触することがなくなり、信頼性の高い組
立が実現できる。According to a fifth aspect of the present invention, in the optical receiver, a pad having a larger diameter than the capillary diameter of the wire bonder is used as the secondary side,
By making the other pad the primary side, the pad on the secondary side of the wire bonding is larger than the crimped wire end, so the secondary side wire end comes into contact with other circuit parts such as aluminum wiring. It is possible to realize highly reliable assembly.
【図１】この発明の第１の実施例の光受信装置の構成を
示す断面図である。FIG. 1 is a sectional view showing a configuration of an optical receiving apparatus according to a first embodiment of the present invention.
【図２】図１で使用している増幅回路例を示す回路図で
ある。FIG. 2 is a circuit diagram showing an example of an amplifier circuit used in FIG.
【図３】この発明の第２の実施例の光受信装置で用いる
フォトダイオードの構成を示す断面図である。FIG. 3 is a cross-sectional view showing the structure of a photodiode used in the optical receiving device according to the second embodiment of the present invention.
【図４】図３のフォトダイオードの構成を示す平面図で
ある。FIG. 4 is a plan view showing the configuration of the photodiode shown in FIG.
【図５】この発明の第３の実施例の光受信装置の構成を
示す平面図である。FIG. 5 is a plan view showing the configuration of an optical receiving device according to a third embodiment of the present invention.
【図６】この発明の第４の実施例の光受信装置の構成を
示す断面図である。FIG. 6 is a sectional view showing a configuration of an optical receiving device according to a fourth embodiment of the present invention.
【図７】この発明の実施例におけるフォトダイオードの
出力パッドと受信ＩＣの入力パッドのワイヤボンディン
グを示す平面図である。FIG. 7 is a plan view showing wire bonding of the output pad of the photodiode and the input pad of the reception IC in the embodiment of the present invention.
【図８】この発明の実施例におけるフォトダイオードの
出力パッドと受信ＩＣの入力パッドのワイヤボンディン
グを示す断面図である。FIG. 8 is a cross-sectional view showing wire bonding of the output pad of the photodiode and the input pad of the reception IC in the embodiment of the present invention.
【図９】従来の光受信装置の構成を示す回路ブロック図
である。FIG. 9 is a circuit block diagram showing a configuration of a conventional optical receiver.
１ パッケージ ２ ボンディングワイヤ ３ 受信ＩＣ ４ リードフレーム ６，６ａ，６ｂ フォトダイオード ８ フォトダイオードの出力パッド ９ 受信ＩＣの入力パッド １０ 出力ピン １１ 受信ＩＣのＰ型基板 １２ フォトダイオードのＰ型基板 ３１ シールド層 ６１ レンズ 1 Package 2 Bonding Wire 3 Receiving IC 4 Lead Frame 6, 6a, 6b Photodiode 8 Photodiode Output Pad 9 Receiving IC Input Pad 10 Output Pin 11 Receiving IC P-type Substrate 12 Photodiode P-type Substrate 31 Shield Layer 61 lens
───────────────────────────────────────────────────── フロントページの続き (72)発明者 薄窪 秀昭 大阪府高槻市幸町１番１号 松下電子工業 株式会社内 (72)発明者 西川路 保 大阪府高槻市幸町１番１号 松下電子工業 株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Hideaki Ukubo, 1-1 Sachimachi, Takatsuki-shi, Osaka Prefecture Matsushita Electronics Industrial Co., Ltd. (72) Hosho Nishikawa, 1-1, Sachimachi, Takatsuki, Osaka Electronic Industry Co., Ltd.
Claims (5)
ードの出力を増幅する受信ＩＣと、前記フォトダイオー
ドおよび前記受信ＩＣをマウントしたリードフレームと
をパッケージに内蔵し、前記フォトダイオードの出力パ
ッドと前記受信ＩＣの入力パッドを前記パッケージ内で
接続した光受信装置であって、 前記フォトダイオードの基板は前記受信ＩＣの基板と同
一導電型としたことを特徴とする光受信装置。1. A photodiode, a receiving IC for amplifying the output of the photodiode, and a lead frame mounting the photodiode and the receiving IC are built in a package, and an output pad of the photodiode and the receiving IC. The optical receiving device in which the input pad of 1. is connected in the package, wherein the substrate of the photodiode has the same conductivity type as the substrate of the receiving IC.
ダイオードの基板と同一導電型の拡散層によるシールド
層を設けた請求項１記載の光受信装置。2. The optical receiving device according to claim 1, wherein a shield layer made of a diffusion layer having the same conductivity type as that of the substrate of the photodiode is provided on the surface of the photodiode.
ドの間に受信ＩＣを配置した請求項１記載の光受信装
置。3. The optical receiving device according to claim 1, wherein a receiving IC is arranged between the output pin of the optical receiving device and the photodiode.
にレンズを設けるとともに、前記フォトダイオードの厚
みを受信ＩＣの厚みより薄くした請求項１記載の光受信
装置。4. The optical receiver according to claim 1, wherein a lens is provided on the package in front of the photodiode, and the thickness of the photodiode is smaller than the thickness of the receiving IC.
信ＩＣの入力パッドのうち少なくとも一方をワイヤボン
ダのキャピラリ径より大きくし、前記キャピラリ径より
大きいパッドを２次側とし、他方のパッドを１次側とし
て、前記両パッドをボンディングワイヤで接続した請求
項１記載の光受信装置。5. The output pad of the photodiode and at least one of the input pads of the receiving IC are made larger than the capillary diameter of the wire bonder, the pad larger than the capillary diameter is made the secondary side, and the other pad is made the primary side. The optical receiving device according to claim 1, wherein the both pads are connected by a bonding wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5313175A JPH07169990A (en) | 1993-12-14 | 1993-12-14 | Optical receiver |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5313175A JPH07169990A (en) | 1993-12-14 | 1993-12-14 | Optical receiver |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07169990A true JPH07169990A (en) | 1995-07-04 |
Family
ID=18038014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5313175A Pending JPH07169990A (en) | 1993-12-14 | 1993-12-14 | Optical receiver |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07169990A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6160253A (en) * | 1997-10-01 | 2000-12-12 | Matsushita Electronics Corporation | Photo detector having a plurality of semiconductor layers |
| US6208447B1 (en) | 1997-02-25 | 2001-03-27 | Matsushita Electric Industrial Co., Ltd. | Optical receiver |
-
1993
- 1993-12-14 JP JP5313175A patent/JPH07169990A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6208447B1 (en) | 1997-02-25 | 2001-03-27 | Matsushita Electric Industrial Co., Ltd. | Optical receiver |
| US6160253A (en) * | 1997-10-01 | 2000-12-12 | Matsushita Electronics Corporation | Photo detector having a plurality of semiconductor layers |
| KR100575098B1 (en) * | 1997-10-01 | 2006-08-11 | 마츠시타 덴끼 산교 가부시키가이샤 | Receiver |
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