JPH07161673A - Method and device for cleaning - Google Patents
Method and device for cleaningInfo
- Publication number
- JPH07161673A JPH07161673A JP5340634A JP34063493A JPH07161673A JP H07161673 A JPH07161673 A JP H07161673A JP 5340634 A JP5340634 A JP 5340634A JP 34063493 A JP34063493 A JP 34063493A JP H07161673 A JPH07161673 A JP H07161673A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- liquid
- processed
- semiconductor wafer
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、洗浄方法及び洗浄装置
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning method and a cleaning device.
【０００２】[0002]
【従来の技術】従来のウェット洗浄方法及び洗浄装置は
ＲＣＡ洗浄を基本にしている。ＲＣＡ洗浄では、硫酸／
過酸化水素水、アンモニア／過酸化水素水、フッ酸及び
塩酸／過酸化水素水の３種類の洗浄処理液で被処理体例
えば半導体ウエハを順次洗浄して被処理体表面に付着し
た有機物及び無機物を溶解するなどして除去するように
している。この際、硫酸／過酸化水素水は有機物やメタ
ルなど無機物の除去に用いられ、アンモニア／過酸化水
素水はシリコン系化合物のエッチングによるパーティク
ルやエッチング残渣などの除去に用いられる。また、フ
ッ酸などは半導体ウエハ表面に形成された自然酸化膜の
除去などに用いられ、また塩酸／過酸化水素水は硫酸／
過酸化水素水と同様無機物の除去などに用いられる。そ
して、異なる３種類の洗浄処理液を個別に貯留した洗浄
槽を準備し、これらの洗浄槽内洗浄処理液中に半導体ウ
エハを順次浸漬し、それぞれの洗浄処理液と半導体ウエ
ハの有機物や無機物からなる付着物との化学反応により
徐々に付着物を除去している。2. Description of the Related Art Conventional wet cleaning methods and cleaning apparatuses are based on RCA cleaning. Sulfuric acid /
Organic substances and inorganic substances attached to the surface of the object to be processed by sequentially cleaning the object to be processed, for example, semiconductor wafers with three kinds of cleaning treatment liquids of hydrogen peroxide solution, ammonia / hydrogen peroxide solution, hydrofluoric acid and hydrochloric acid / hydrogen peroxide solution. Are removed by dissolving. At this time, the sulfuric acid / hydrogen peroxide solution is used to remove inorganic substances such as organic substances and metals, and the ammonia / hydrogen peroxide solution is used to remove particles and etching residues by etching the silicon-based compound. Hydrofluoric acid is used to remove the natural oxide film formed on the surface of the semiconductor wafer.
It is used for removing inorganic substances as well as hydrogen peroxide. Then, a cleaning tank in which three different types of cleaning treatment liquids are individually stored is prepared, and semiconductor wafers are sequentially immersed in the cleaning treatment liquids in these cleaning treatment tanks. The attached substance is gradually removed by a chemical reaction with the attached substance.
【０００３】また、洗浄の際には、例えば搬送具を用い
て複数枚例えば２５枚の半導体ウエハを一括して大気中
を各洗浄槽上方へ搬送した後半導体ウエハを搬送具から
例えば洗浄槽の保持具へ引き渡し、保持具で保持した状
態で洗浄処理液中に浸漬し、洗浄後には再び大気中へ引
き上げ、半導体ウエハの受け渡しを行なった後同様にし
て次の洗浄槽へ搬送し、同様の洗浄処理を各洗浄槽にお
いて行ない、洗浄終了後には半導体ウエハを乾燥し、次
工程へ搬送するようにしている。In cleaning, a plurality of semiconductor wafers, for example, 25 semiconductor wafers are collectively transported to the upper atmosphere of each cleaning tank by using, for example, a transfer tool, and then the semiconductor wafers are transferred from the transfer tool to, for example, a cleaning tank. It is delivered to a holder, immersed in a cleaning treatment liquid while being held by the holder, pulled up to the atmosphere again after cleaning, and handed over to the next cleaning wafer after the semiconductor wafer is transferred in the same manner. The cleaning process is performed in each cleaning tank, and after the cleaning is completed, the semiconductor wafer is dried and transferred to the next step.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来の
洗浄方法及び洗浄装置の場合には、半導体ウエハを搬送
具を用いて大気中で搬送するようにしているため、大気
中に浮遊するパーティクルを巻き込み、半導体ウエハ表
面に大気中のパーティクルが付着するという課題があっ
た。また、搬送具によって半導体ウエハを搬送するよう
にしているため、搬送具を介してパーティクル等の塵埃
が半導体ウエハに付着することがあり、しかも搬送具と
洗浄槽の保持具間で半導体ウエハを受け渡す際に半導体
ウエハを損傷させる虞があるという課題があった。However, in the case of the conventional cleaning method and cleaning apparatus, since the semiconductor wafer is transferred in the air by using the transfer tool, particles floating in the air are trapped. However, there is a problem that particles in the atmosphere adhere to the surface of the semiconductor wafer. Further, since the semiconductor wafer is transferred by the transfer tool, dust such as particles may adhere to the semiconductor wafer through the transfer tool, and the semiconductor wafer is not received between the transfer tool and the holder of the cleaning tank. There is a problem that the semiconductor wafer may be damaged when it is delivered.
【０００５】また、従来は化学反応による洗浄を行なっ
ているため、洗浄時間は洗浄処理液の反応時間及び反応
温度に大きく左右され、また、洗浄処理液の使用量も洗
浄処理槽に満たした状態で洗浄を行なうようにしている
ため、スループットを高めるには限界があり、洗浄処理
液の使用量も多く洗浄コストの低減にも限界があるとい
う課題があった。Further, conventionally, since cleaning is performed by a chemical reaction, the cleaning time greatly depends on the reaction time and reaction temperature of the cleaning treatment liquid, and the amount of the cleaning treatment liquid used is filled in the cleaning treatment tank. Since the cleaning is performed in step 1, there is a limit in increasing the throughput, and there is a problem that the amount of the cleaning treatment liquid used is large and there is a limit in reducing the cleaning cost.
【０００６】本発明は、上記課題を解決するためになさ
れたもので、被処理体を洗浄する際に、被処理体への外
気からのパーティクルの付着を防止すると共に被処理体
の損傷を防止することができる洗浄方法及び洗浄装置を
提供することを目的としている。The present invention has been made to solve the above problems, and prevents particles from being adsorbed to the object to be processed from the outside air when cleaning the object to be processed and prevents damage to the object to be processed. It is an object of the present invention to provide a cleaning method and a cleaning device that can be used.
【０００７】また、本発明は、洗浄時間を短縮してスル
ープットを高めることができる洗浄方法を提供すること
を目的としている。Another object of the present invention is to provide a cleaning method capable of shortening the cleaning time and increasing the throughput.
【０００８】[0008]
【課題を解決するための手段】本発明の請求項１に記載
の洗浄方法は、被処理体を液体の中で浮揚させ、この液
体に所定方向への液流を付与して被処理体をその液流の
下流側にある洗浄部へ搬送し、この洗浄部では上記被処
理体を上記液体から隔離して密閉した後、この洗浄部内
の上記液体を洗浄処理液で置換した後、この洗浄処理液
を連続的に供給しながら被処理体を洗浄し、その後上記
洗浄部の密閉を解除した後必要に応じて次の洗浄部へ被
処理体を同様に液中搬送し、同様の手順により洗浄を繰
り返すものである。According to the cleaning method of the first aspect of the present invention, the object to be processed is levitated in the liquid, and a liquid flow in a predetermined direction is applied to the liquid to clean the object to be processed. The liquid is conveyed to a cleaning unit on the downstream side of the liquid flow, and in the cleaning unit, the object to be processed is isolated from the liquid and hermetically sealed, and then the liquid in the cleaning unit is replaced with the cleaning treatment liquid, and then the cleaning is performed. The object to be treated is washed while continuously supplying the treatment liquid, and then the sealing of the washing section is released, and then the object to be treated is similarly conveyed in the liquid to the next washing section, and the same procedure is followed. The cleaning is repeated.
【０００９】また、本発明の請求項２に記載の洗浄方法
は、被処理体をこれよりやや大きい洗浄空間を有する洗
浄部内に配置した後、粒子を混入した洗浄処理液を上記
洗浄部内の被処理体に向けて連続的に供給して洗浄処理
液の液流を作り、粒子を含む液流により被処理体を洗浄
するものである。Further, in the cleaning method according to the second aspect of the present invention, the object to be processed is placed in a cleaning section having a cleaning space slightly larger than this, and then a cleaning solution containing particles is applied to the cleaning section in the cleaning section. The cleaning treatment liquid is continuously supplied to the treatment object to form a liquid flow of the cleaning treatment liquid, and the treatment object is cleaned with the liquid flow containing particles.
【００１０】また、本発明の請求項３に記載の洗浄方法
は、請求項２に記載の発明において、粒径が０.０１〜
１００μｍの粒子を用いるものである。The cleaning method according to claim 3 of the present invention is the same as the cleaning method according to claim 2, wherein the particle size is 0.01 to
It uses particles of 100 μm.
【００１１】また、本発明の請求項４に記載の洗浄装置
は、被処理体を搬入する搬入手段と、この搬入手段によ
り液体の中へ搬入された被処理体に液中での揚力及び液
流を付与する液流搬送手段と、この液流搬送手段により
搬送された被処理体を液体から隔離、密閉して洗浄する
少なくとも一つの洗浄手段と、この洗浄手段により洗浄
された被処理体を次工程へ搬出する搬出手段とを備えて
構成されたものである。According to a fourth aspect of the present invention, there is provided a cleaning apparatus in which the object to be processed is carried in and the object to be processed brought into the liquid by the carrying-in means is lifted in liquid and liquid. A liquid flow transfer means for applying a flow, at least one cleaning means for separating and sealing the object to be processed transferred by the liquid flow transfer means from the liquid, and an object to be processed cleaned by the cleaning means. And a carrying-out means for carrying out to the next step.
【００１２】また、本発明の請求項５に記載の洗浄装置
は、請求項４に記載の発明において、上記洗浄手段は、
被処理体を保持する保持手段と、この保持手段により保
持された被処理体を上記液体から密閉隔離する密閉手段
と、この密閉手段により密閉された被処理体に向けて洗
浄処理液を連続的に供給し、被処理体を浮揚させた状態
で洗浄する洗浄処理液供給手段とを備えて構成されたも
のである。According to a fifth aspect of the present invention, there is provided the cleaning device according to the fourth aspect, wherein the cleaning means is
Holding means for holding the object to be processed, sealing means for hermetically separating the object to be processed held by the holding means from the liquid, and the cleaning treatment liquid is continuously directed toward the object to be processed sealed by the sealing means. And a cleaning treatment liquid supply means for cleaning the object to be treated in a floating state.
【００１３】[0013]
【作用】本発明の請求項１に記載の発明によれば、被処
理体を液体の中で浮揚させ、この液体に所定方向への液
流を付与すると、被処理体を浮揚した状態のまま液流に
よって下流側の洗浄部へ搬送し、被処理体が洗浄部に到
達すると、この洗浄部では被処理体を液体から隔離して
密閉し、引き続き洗浄部内の液体を洗浄処理液で置換し
た後、この洗浄処理液を連続的に供給しながら被処理体
を洗浄し、洗浄後には洗浄部の密閉を解除し、必要に応
じて次の洗浄部へ被処理体を同様に液中搬送し、同様の
手順により洗浄を繰り返すが、この間に被処理体は搬送
具などと一切接触せず、しかも外気に触れないため、パ
ーティクル等の塵埃による汚染を防止することができ
る。また、洗浄後の被処理体を乾燥することなく次の洗
浄部へ搬送することができ、アンモニア、フッ化水素等
のエッチング処理液で処理した被処理体であっても、被
処理体を液体中で搬送することにより被処理体に残存す
るエッチング処理液を液体により希釈除去することがで
き、残存エッチング処理液による被処理体の不均一なエ
ッチングを防止することができる。According to the first aspect of the present invention, when the object to be processed is levitated in the liquid and a liquid flow in a predetermined direction is applied to the liquid, the object to be processed remains levitated. When the object to be processed reaches the cleaning section by being conveyed by the liquid flow to the cleaning section, the object to be processed is separated from the liquid and sealed in this cleaning section, and then the liquid in the cleaning section is replaced with the cleaning treatment liquid. After that, the object to be treated is washed while continuously supplying this cleaning treatment liquid, and after the washing, the sealing of the washing part is released, and the object to be treated is similarly conveyed in the liquid to the next washing part. Although the cleaning is repeated by the same procedure, the object to be processed does not come into contact with the transport tool or the like at all during this period and does not come into contact with the outside air. Further, the object to be processed after cleaning can be conveyed to the next cleaning unit without being dried, and even if the object to be processed is treated with an etching treatment liquid such as ammonia or hydrogen fluoride, By carrying it inside, the etching treatment liquid remaining on the object to be treated can be diluted and removed with a liquid, and uneven etching of the object to be treated by the remaining etching treatment liquid can be prevented.
【００１４】また、本発明の請求項２に記載の発明によ
れば、被処理体よりやや大きい洗浄空間を有する洗浄部
内に配置した後、粒子を混入した洗浄処理液を洗浄部内
の被処理体に向けて連続的に供給して洗浄処理液の液流
を作ると、この液流に随伴する粒子が被処理体に衝突な
どし、被処理体表面の付着物を剥離するなどして洗浄処
理液による被処理体の洗浄作用を促進することができ
る。According to the second aspect of the present invention, after the object to be treated is placed in the washing section having a washing space slightly larger than the object to be treated, the washing treatment liquid containing particles is treated in the object to be treated in the washing section. When a liquid stream of the cleaning liquid is created by continuously supplying the liquid to the target, particles accompanying this liquid collide with the object to be processed, and the adhered substances on the surface of the object are removed to perform the cleaning process. It is possible to promote the cleaning action of the object to be treated by the liquid.
【００１５】また、本発明の請求項３に記載の発明によ
れば、請求項２に記載の発明において、粒径が０.０１
〜１００μｍの粒子を用いるため、被処理体の洗浄後に
は粒子を被処理体から容易に除去することができる。According to the invention of claim 3 of the present invention, in the invention of claim 2, the particle size is 0.01.
Since particles having a particle size of up to 100 μm are used, the particles can be easily removed from the object to be processed after washing the object to be processed.
【００１６】また、本発明の請求項４に記載の発明によ
れば、搬入手段により被処理体を液体の中へ搬入した
後、液流搬送手段により液中の被処理体に揚力を付与し
て被処理体を液中に浮揚させ、その液流に被処理体を乗
せて所定方向にある少なくとも一つの洗浄手段へ搬送す
ると、洗浄手段では被処理体を液体から隔離、密閉して
洗浄処理液により被処理体を洗浄し、洗浄後には搬出手
段により被処理体を搬出することができ、この間に被処
理体は搬送具などと一切接触せず、しかも外気に触れな
いため、パーティクル等の塵埃による汚染を防止するこ
とができる。また、洗浄後の被処理体を乾燥することな
く次の洗浄部へ搬送することができ、アンモニア、フッ
化水素等のエッチング処理液で処理した被処理体であっ
ても、被処理体を液体中で搬送することにより被処理体
に残存するエッチング処理液を液体により希釈除去する
ことができ、残存エッチング処理液による被処理体の不
均一なエッチングを防止することができる。According to the fourth aspect of the present invention, after the object to be processed is carried into the liquid by the carrying-in means, a lift force is applied to the object to be processed in the liquid by the liquid flow carrying means. When the object to be processed is levitated in the liquid and the object to be processed is placed on the liquid flow and conveyed to at least one cleaning means in a predetermined direction, the cleaning means separates and seals the object to be processed in the cleaning process. The object to be processed can be washed with the liquid, and after the cleaning, the object to be processed can be carried out by the carrying-out means. During this time, the object to be processed does not come into contact with the carrier at all and does not come into contact with the outside air. It is possible to prevent contamination by dust. Further, the object to be processed after cleaning can be conveyed to the next cleaning unit without being dried, and even if the object to be processed is treated with an etching treatment liquid such as ammonia or hydrogen fluoride, By carrying it inside, the etching treatment liquid remaining on the object to be treated can be diluted and removed with a liquid, and uneven etching of the object to be treated by the remaining etching treatment liquid can be prevented.
【００１７】また、本発明の請求項５に記載の発明によ
れば、請求項４に記載の発明において、上記洗浄手段で
は、保持手段により被処理体を保持すると、密閉手段に
より被処理体を液体から密閉隔離し、その後、洗浄処理
液供給手段により被処理体に向けて洗浄処理液を連続的
に供給すると、被処理体を液中で浮揚した状態で洗浄す
ることができる。According to a fifth aspect of the present invention, in the invention according to the fourth aspect, when the cleaning means holds the object to be processed by the holding means, the object to be processed is held by the sealing means. When the cleaning treatment liquid supply means continuously supplies the cleaning treatment liquid toward the object to be treated after the liquid is hermetically sealed from the liquid, the object to be treated can be washed while being suspended in the liquid.
【００１８】[0018]
【実施例】以下、図１〜図９に示す実施例に基づいて本
発明を説明する。本実施例の洗浄装置は、耐薬品性に優
れた塩化ビニル等の合成樹脂によって全体が扁平な矩形
状に形成されたハウジング１を備えている。このハウジ
ング２内では被処理体例えば半導体ウエハ２を液体例え
ば超純水３の液流によって搬送できるように超純水３が
満たされている。また、このハウジング１内には、前工
程から半導体ウエハ２をハウジング１内に搬入する搬入
機構４と、半導体ウエハ２を洗浄する第１、第２、第３
洗浄機構５Ａ、５Ｂ、５Ｃと、半導体ウエハ２の搬送方
向を転換する第１、第２、第３方向転換機構６Ａ、６
Ｂ、６Ｃと、洗浄後の半導体ウエハ２を濯ぐ第１、第
２、第３リンス機構７Ａ、７Ｂと、半導体ウエハ２を搬
出する搬出機構８とが収納され、超純水３の液流により
半導体ウエハ２を１枚ずつ各機構へ搬送するように構成
されている。そして、超純水３の液流は後述のように作
るようにしている。EXAMPLES The present invention will be described below based on the examples shown in FIGS. The cleaning apparatus of this embodiment includes a housing 1 which is made of a synthetic resin having excellent chemical resistance, such as vinyl chloride, and is formed into a flat rectangular shape as a whole. The housing 2 is filled with ultrapure water 3 so that an object to be processed, for example, a semiconductor wafer 2 can be transported by a liquid flow of liquid, for example, ultrapure water 3. Further, in the housing 1, a carrying-in mechanism 4 for carrying in the semiconductor wafer 2 into the housing 1 from the previous step, and first, second and third cleaning of the semiconductor wafer 2.
The cleaning mechanisms 5A, 5B, 5C and the first, second and third direction changing mechanisms 6A, 6 for changing the carrying direction of the semiconductor wafer 2.
B and 6C, the first, second and third rinse mechanisms 7A and 7B for rinsing the semiconductor wafer 2 after cleaning, and the carry-out mechanism 8 for carrying out the semiconductor wafer 2 are housed, and the liquid flow of the ultrapure water 3 is stored. Thus, the semiconductor wafers 2 are conveyed one by one to each mechanism. The liquid flow of the ultrapure water 3 is made as described later.
【００１９】そして、搬入機構４は図１に示すようにハ
ウジング１の一端に長手方向の一側面に寄せて配設され
ている。そして、この搬入機構４は、図２に示すよう
に、半導体ウエハ２を水平に支持した状態のカセット９
を収納できるウエハ収納溝１０と、このウエハ収納溝１
０の底面に昇降可能に配設されたウエハ受け１１と、こ
のウエハ受け１１の一側面上端近傍からエアーシリンダ
などの駆動機構１２により水平方向で出没可能に配設さ
れ且つプラスチックあるいは石英などの耐薬品性の材料
によって中空状に形成されたウエハ浮揚プレート１３と
を備えている。このウエハ浮揚プレート１３はその進出
端位置でカセット９内に収納された半導体ウエハ２の裏
面に接近し、あるいは接触してその上面の噴出孔１４か
ら噴出する超純水３によって半導体ウエハ２を浮揚させ
ながら下流側へ搬送できるように構成されている。ま
た、このウエハ浮揚プレート１３とハウジング１は配管
１５を介して互いに接続され、この配管１５に配設され
た循環ポンプ１６の駆動力によりハウジング１内の超純
水３をウエハ浮揚プレート１３内へ供給し、この超純水
３を噴出孔１４から噴出させて半導体ウエハ２を搬送す
ると共にハウジング１内へ超純水３を還流するようにし
てある。As shown in FIG. 1, the carry-in mechanism 4 is arranged at one end of the housing 1 so as to be close to one side surface in the longitudinal direction. Then, as shown in FIG. 2, the loading mechanism 4 includes a cassette 9 in a state in which the semiconductor wafer 2 is horizontally supported.
Wafer storing groove 10 for storing a wafer and this wafer storing groove 1
The wafer receiver 11 is arranged on the bottom surface of the wafer 0 so as to be able to move up and down, and is arranged so as to be able to project and retract in the horizontal direction from the vicinity of the upper end of one side surface of the wafer receiver 11 by a driving mechanism 12 such as an air cylinder and is made of plastic or quartz. The wafer floating plate 13 is made of a chemical material and has a hollow shape. The wafer floating plate 13 approaches the back surface of the semiconductor wafer 2 housed in the cassette 9 at the advanced end position thereof, or floats the semiconductor wafer 2 by the ultrapure water 3 ejected from the ejection holes 14 on the upper surface of the wafer floating plate 13 by coming into contact therewith or coming into contact therewith. It is configured so that it can be conveyed to the downstream side while being carried out. Further, the wafer floating plate 13 and the housing 1 are connected to each other via a pipe 15, and the ultrapure water 3 in the housing 1 is moved into the wafer floating plate 13 by the driving force of a circulation pump 16 arranged in the pipe 15. The ultrapure water 3 is supplied and ejected from the ejection holes 14 to convey the semiconductor wafer 2 and to recirculate the ultrapure water 3 into the housing 1.
【００２０】従って、ウエハ浮揚プレート１３が駆動機
構１２の駆動力でウエハ収納溝１０内へ進出して半導体
ウエハ２の裏面を部分的に被い、この時点で循環ポンプ
１６が駆動してウエハ浮揚プレート１３から超純水３を
半導体ウエハ２に向けて噴出してカセット９内の半導体
ウエハ２を１枚ずつ下流側へ送り出すと、ウエハ浮揚プ
レート１３が駆動機構１２によりウエハ収納溝１０から
退没すると共にウエハ受け１１が昇降して次の半導体ウ
エハ２を所定位置にセットし、上述の動作を繰り返して
カセット９内の半導体ウエハ２を１枚ずつ搬送するよう
にしてある。Therefore, the wafer levitation plate 13 advances into the wafer housing groove 10 by the driving force of the driving mechanism 12 and partially covers the back surface of the semiconductor wafer 2, and at this time, the circulation pump 16 drives to levitation the wafer. When the ultrapure water 3 is ejected from the plate 13 toward the semiconductor wafer 2 and the semiconductor wafers 2 in the cassette 9 are sent out one by one to the downstream side, the wafer floating plate 13 is retracted from the wafer storage groove 10 by the drive mechanism 12. At the same time, the wafer receiver 11 moves up and down to set the next semiconductor wafer 2 at a predetermined position, and the above-described operation is repeated to convey the semiconductor wafers 2 in the cassette 9 one by one.
【００２１】搬入機構４から搬送されて来る半導体ウエ
ハ２は第１洗浄機構５Ａにおいて最初の洗浄を行なうよ
うに構成されている。この第１洗浄機構５Ａは、図４に
示すように、搬入機構４から搬送されて来る半導体ウエ
ハ２を受け止める、例えば３個の出没可能なストッパー
ピン１７と、これらのストッパーピン１７によって停止
した半導体ウエハ２をハウジング１の底面から離した状
態で支持する例えば３個の支持ピン１８と、これらの支
持ピン１８で支持された半導体ウエハ２を被って内部を
密閉する石英などの耐食性材料からなる扁平なチャンバ
ー１９とを備えている。そして、３個のストッパーピン
１７は半導体ウエハ２のやや外側の周方向に等間隔を空
けて配置され、また３個の支持ピン１８は半導体ウエハ
２の外周縁部を周方向等間隔を空けて半導体ウエハ２を
裏面から支持するように配置され、また、チャンバー１
９は昇降可能に構成されている。The semiconductor wafer 2 carried from the carry-in mechanism 4 is configured to be first cleaned by the first cleaning mechanism 5A. As shown in FIG. 4, the first cleaning mechanism 5A receives the semiconductor wafer 2 conveyed from the carry-in mechanism 4, for example, three retractable stopper pins 17 and semiconductors stopped by these stopper pins 17. For example, three support pins 18 that support the wafer 2 in a state of being separated from the bottom surface of the housing 1, and a flat plate made of a corrosion-resistant material such as quartz that covers the semiconductor wafer 2 supported by these support pins 18 and seals the inside. The chamber 19 is provided. The three stopper pins 17 are arranged at equal intervals in the circumferential direction slightly outside the semiconductor wafer 2, and the three support pins 18 are provided at equal intervals in the circumferential direction on the outer peripheral edge of the semiconductor wafer 2. The chamber 1 is arranged so as to support the semiconductor wafer 2 from the back side.
9 is configured to be able to move up and down.
【００２２】更に、チャンバー１９には硫酸／過酸化水
素水かなる第１薬液を内部へ供給するリング状の液体供
給部２０が外方へ突出して形成され、この液体供給部２
０からチャンバー１９内に供給された第１薬液をチャン
バー１９の中央に形成された排出部２１から排出し、こ
の間に半導体ウエハ２の上面を第１薬液で洗浄するよう
に構成されている。この液体供給部２０の径方向内側に
は周方向で等間隔に複数の孔が形成され、これらの孔か
ら第１薬液を半導体ウエハ２の表面に向けて噴出するよ
うにしてある。そして、液体供給部２０には後述の新薬
液槽、薬液槽及び純水槽が接続され（図示せず）、ま
た、排出部２１には薬液槽に接続されている。また、ハ
ウジング１の裏面側にはリング状の液体供給部２２が下
方へ突出して形成され、この液体供給部２２には第１薬
液の新薬液を貯留する新薬液槽２３及び使用中の第１薬
液を貯留する薬液槽２４及び超純水を貯留する純水槽２
５がそれぞれ接続されている。そして、この液体供給部
２２の内側にも周方向等間隔に複数の孔が形成され、こ
れらの孔から第１薬液を半導体ウエハ２の裏面に向けて
噴出するようにしてある。そして、液体供給部２２内の
中央には排出部２６が形成され、また、液体供給部２２
の外側には複数の排出部２７が周方向等間隔を空けて形
成され、各排出部２６、２７からチャンバー１９内の超
純水３あるいは第１薬液を薬液槽２４へあるいは外部へ
排出し、この間に半導体ウエハ２の裏面を第１薬液で洗
浄するように構成されている。Further, in the chamber 19, a ring-shaped liquid supply portion 20 for supplying the first chemical liquid consisting of sulfuric acid / hydrogen peroxide water to the inside is formed so as to project outward, and this liquid supply portion 2
The first chemical liquid supplied into the chamber 19 from 0 is discharged from the discharge portion 21 formed in the center of the chamber 19, and the upper surface of the semiconductor wafer 2 is cleaned with the first chemical liquid during this period. A plurality of holes are formed on the inner side in the radial direction of the liquid supply unit 20 at equal intervals in the circumferential direction, and the first chemical liquid is ejected toward the surface of the semiconductor wafer 2 from these holes. Then, a new chemical solution tank, a chemical solution tank, and a pure water tank, which will be described later, are connected to the liquid supply section 20 (not shown), and the discharge section 21 is connected to the chemical solution tank. Further, a ring-shaped liquid supply portion 22 is formed so as to project downward on the rear surface side of the housing 1, and the liquid supply portion 22 stores a new chemical liquid tank 23 for storing a new chemical liquid of the first chemical liquid and a first chemical liquid in use. Chemical liquid tank 24 for storing chemical liquid and pure water tank 2 for storing ultrapure water
5 are connected to each other. A plurality of holes are formed inside the liquid supply portion 22 at equal intervals in the circumferential direction, and the first chemical liquid is ejected toward the back surface of the semiconductor wafer 2 from these holes. A discharge portion 26 is formed in the center of the liquid supply portion 22, and the liquid supply portion 22
A plurality of discharge parts 27 are formed at equal intervals in the circumferential direction on the outer side of, and discharge the ultrapure water 3 or the first chemical liquid in the chamber 19 from the respective discharge parts 26 and 27 to the chemical liquid tank 24 or to the outside, During this period, the back surface of the semiconductor wafer 2 is configured to be washed with the first chemical liquid.
【００２３】この洗浄時には、裏面から供給される第１
薬液の供給圧はチャンバー１９側から供給される第１薬
液の供給圧より低く、半導体ウエハ２を支持ピン１８に
軽く接触させあるいは支持ピン１７から若干浮かせた状
態で半導体ウエハ２を洗浄することが好ましい。また、
例えば集積回路が形成された面が半導体ウエハ２の上面
であれば、チャンバー１９から供給する第１薬液を下面
から供給する薬液よりも新しいものを使用することが好
ましい。この場合には、上述のようにチャンバー１９側
から供給する第１薬液の供給圧を裏面側からのものより
も高くしておくことにより、半導体ウエハ２の下面側の
古い薬液の上面側への混入を抑制し、集積回路の形成さ
れた面とそうでない面とで薬液に使い分けをできるよう
になっている。尚、第１薬液は新薬液を除き疲労するま
で循環使用し、疲労した第１薬液は廃棄するようにして
ある。At the time of this cleaning, first
The supply pressure of the chemical solution is lower than the supply pressure of the first chemical solution supplied from the chamber 19 side, so that the semiconductor wafer 2 can be cleaned while the semiconductor wafer 2 is lightly brought into contact with the support pins 18 or slightly floated from the support pins 17. preferable. Also,
For example, when the surface on which the integrated circuit is formed is the upper surface of the semiconductor wafer 2, it is preferable to use a newer one than the chemical liquid supplied from the lower surface of the first chemical liquid supplied from the chamber 19. In this case, the supply pressure of the first chemical liquid supplied from the chamber 19 side is set higher than that from the rear surface side as described above, so that the old chemical liquid on the lower surface side of the semiconductor wafer 2 to the upper surface side. It is possible to suppress the mixture and selectively use the chemical liquid on the surface on which the integrated circuit is formed and the surface on which the integrated circuit is not formed. It should be noted that the first chemical liquid is reused except the new chemical liquid until exhaustion, and the exhausted first chemical liquid is discarded.
【００２４】更に、図４では省略したが第１洗浄機構５
Ａを構成するハウジング１の底面には図６に示すように
ウエハ浮揚プレート１３の噴出孔１４と同様の噴出孔２
８が多数形成され、この底面の裏側から各噴出孔２８を
介して第１洗浄機構５Ａ内へ超純水３を循環供給するこ
とにより超純水３を同図矢印で示す方向へ噴出し、半導
体ウエハ２を浮揚させながら下流側の方向転換機構６Ａ
へ搬送するようにしてある。この方向転換機構６Ａは、
第１洗浄機構５Ａと同様にストッパーピン２９及び支持
ピン３０と、ハウジング１の底面に形成された噴出孔３
１とを備え、第１洗浄機構５Ａから搬送されて来る半導
体ウエハ２をハウジング１の底面から進出したストッパ
ーピン２９により一端止めて支持ピン３０上で支持した
後、噴出孔３１から噴出する超純水３により搬送方向を
９０°転換して第１リンス機構７Ａの方向へ搬送するよ
うに構成されている。この第１リンス機構７Ａは、第１
洗浄機構５Ａに準ずるチャンバー３２を有し、ストッパ
ーピン３３及び支持ピン３４により半導体ウエハ２を拘
束した状態で底面の噴出孔３５から超純水を噴出して半
導体ウエハ２を濯ぐように構成されている。Further, although omitted in FIG. 4, the first cleaning mechanism 5
As shown in FIG. 6, on the bottom surface of the housing 1 constituting A, the ejection holes 2 similar to the ejection holes 14 of the wafer floating plate 13 are formed.
8 are formed in large numbers, and the ultrapure water 3 is circulated from the back side of the bottom surface into the first cleaning mechanism 5A through the ejection holes 28, thereby ejecting the ultrapure water 3 in the direction shown by the arrow in FIG. The direction changing mechanism 6A on the downstream side while levitating the semiconductor wafer 2
It is designed to be transported to. This direction changing mechanism 6A
Similar to the first cleaning mechanism 5A, the stopper pin 29 and the support pin 30, and the ejection hole 3 formed on the bottom surface of the housing 1
1, the semiconductor wafer 2 conveyed from the first cleaning mechanism 5A is temporarily stopped by the stopper pin 29 that has advanced from the bottom surface of the housing 1 and is supported on the support pin 30 and then ejected from the ejection hole 31. It is configured so that the water 3 changes the transport direction by 90 ° and transports it in the direction of the first rinse mechanism 7A. This first rinse mechanism 7A is
It has a chamber 32 conforming to the cleaning mechanism 5A, and is configured to spout ultrapure water from spout holes 35 on the bottom surface to rinse the semiconductor wafer 2 while the semiconductor wafer 2 is restrained by the stopper pins 33 and the support pins 34. ing.
【００２５】第１リンス機構７Ａから搬送されて来る半
導体ウエハ２は、図１に矢印で示すように、その後第２
方向転換機構６Ｂ、第２洗浄機構５Ｂ、第２方向転換機
構６Ｂ、第２リンス機構７Ｂ、第３方向転換機構６Ｃ、
第３洗浄機構５Ｃ、第３方向転換機構６Ｃ及び第２リン
ス機構７Ｂを経由して搬出機構８へ搬送するようにして
ある。これらの第２、第３洗浄機構５Ｂ、５Ｃ、第２、
第３方向転換機構６Ｂ、６Ｃ、第２リンス機構７Ｂ及び
搬出機構８は、それぞれ第１洗浄機構５Ａ、第１方向転
換機構６Ａ、第１リンス機構７Ａ及び搬入機構４と同様
に構成されている。但し、第２洗浄機構５Ｂではアンモ
ニア／過酸化水素水を第２薬液として供給し、第３洗浄
機構５Ｃではフッ酸及び塩酸／過酸化水素水を第３薬液
として使用するようにしてある。The semiconductor wafer 2 conveyed from the first rinsing mechanism 7A is then transferred to the second wafer as shown by the arrow in FIG.
Direction changing mechanism 6B, second cleaning mechanism 5B, second direction changing mechanism 6B, second rinse mechanism 7B, third direction changing mechanism 6C,
The third cleaning mechanism 5C, the third direction changing mechanism 6C, and the second rinsing mechanism 7B are conveyed to the carry-out mechanism 8. These second and third cleaning mechanisms 5B, 5C, second,
The third direction changing mechanisms 6B and 6C, the second rinse mechanism 7B, and the carry-out mechanism 8 are configured similarly to the first cleaning mechanism 5A, the first direction changing mechanism 6A, the first rinse mechanism 7A, and the carry-in mechanism 4, respectively. . However, the second cleaning mechanism 5B supplies ammonia / hydrogen peroxide solution as the second chemical solution, and the third cleaning mechanism 5C uses hydrofluoric acid and hydrochloric acid / hydrogen peroxide solution as the third chemical solution.
【００２６】次に、本発明の洗浄方法の一実施例を上記
洗浄装置の動作と共に説明する。まず、前工程から２５
枚の半導体ウエハ２をカセット単位で搬入機構４へ搬送
してハウジング１の上方へ突出したウエハ受け１１へ引
き渡すと、ウエハ受け１１がウエハ収納溝１０内の所定
位置へ下降し、半導体ウエハ２が超純水３中に沈む。こ
の位置で駆動機構１２が駆動し、ウエハ浮揚プレート１
３がウエハ収納溝１０内の超純水３中へ進出して半導体
ウエハ２の裏面に達する。次いで、循環ポンプ１６を駆
動し配管１５を介してウエハ収納溝１０の超純水３をウ
エハ浮揚プレート１３内へ循環させると、その噴出孔１
４から超純水３が下流側へ傾斜した状態で噴出し、超純
水３の液流を作りカセット９内の半導体ウエハ２を浮揚
させながら超純水３の液流によって下流側へ搬送する。
カセット９内から半導体ウエハ２が搬出されると、ウエ
ハ受け１１が下降してウエハ浮揚プレート１３に接近
し、次のウエハ搬出動作を待機する。この間、搬入機構
４から搬送された半導体ウエハ２は下流側の第１洗浄機
構５Ａの噴出孔２８から噴出する超純水３によって支持
ピン１８上へ搬入すると共に底面から突出したストッパ
ーピン１７の作用で停止する一方、退没していたストッ
パーピン１７が底面から突出し半導体ウエハ２を３本の
ストッパーピン１７により支持ピン１８上で拘束する。Next, one embodiment of the cleaning method of the present invention will be described together with the operation of the cleaning apparatus. First, 25 from the previous process
When the semiconductor wafers 2 are conveyed in cassette units to the loading mechanism 4 and delivered to the wafer receiver 11 protruding above the housing 1, the wafer receiver 11 descends to a predetermined position in the wafer storage groove 10, and the semiconductor wafer 2 is Set in ultrapure water 3. At this position, the drive mechanism 12 is driven to drive the wafer floating plate 1
3 advances into the ultrapure water 3 in the wafer storage groove 10 and reaches the back surface of the semiconductor wafer 2. Next, when the circulation pump 16 is driven to circulate the ultrapure water 3 in the wafer storage groove 10 into the wafer levitation plate 13 through the pipe 15, the ejection hole 1 is formed.
4, the ultrapure water 3 is jetted in a downwardly inclined state to create a liquid flow of the ultrapure water 3 and the semiconductor wafer 2 in the cassette 9 is levitated while being conveyed by the liquid flow of the ultrapure water 3 to the downstream side. .
When the semiconductor wafer 2 is unloaded from the cassette 9, the wafer receiver 11 descends to approach the wafer floating plate 13 and waits for the next wafer unloading operation. During this time, the semiconductor wafer 2 carried from the carry-in mechanism 4 is carried onto the support pins 18 by the ultrapure water 3 ejected from the ejection holes 28 of the first cleaning mechanism 5A on the downstream side, and the action of the stopper pins 17 protruding from the bottom surface. Meanwhile, the stopper pin 17 which has been retracted protrudes from the bottom surface and holds the semiconductor wafer 2 on the support pin 18 by the three stopper pins 17.
【００２７】第１洗浄機構５Ａのストッパーピン１７で
半導体ウエハ２を拘束した状態でチャンバー１９が下降
してハウジング１の底面に密着すると、図４に示すよう
にチャンバー１９によって半導体ウエハ２を外部から遮
断した状態で密閉する。引き続き純水槽２５の超純水を
チャンバー１９の液体供給部２０及びハウジング１底面
の液体供給部２２からチャンバー１９内へ供給すると、
この超純水でチャンバー１９内の搬送用として用いてい
る超純水を置換することができる。超純水を置換した
後、新薬液槽２３から新薬液を上下の液体供給部２０、
２２からチャンバー１９内へ供給すると、直ちに超純水
を新薬液で置換することができ、その後図４の矢印で示
すように流れる新薬液で半導体ウエハ２の表裏両面を同
時に洗浄してレジストなどの有機物及びメタルなどの無
機物を除去する。洗浄後の薬液を排出部２１、２６、２
７から排出して薬液槽２４へ戻し、薬液槽２４の薬液を
再びチャンバー１９内へ循環して半導体ウエハ２を洗浄
する。この際、薬液が疲労した場合には適宜外部へ排出
する。When the chamber 19 descends and comes into close contact with the bottom surface of the housing 1 while the semiconductor wafer 2 is restrained by the stopper pins 17 of the first cleaning mechanism 5A, the chamber 19 causes the semiconductor wafer 2 to come from outside as shown in FIG. Seal in the shut off state. Subsequently, when ultrapure water in the pure water tank 25 is supplied into the chamber 19 from the liquid supply unit 20 of the chamber 19 and the liquid supply unit 22 on the bottom surface of the housing 1,
The ultrapure water used for transportation in the chamber 19 can be replaced with this ultrapure water. After substituting the ultrapure water, the new chemical liquid is supplied from the new chemical liquid tank 23 to the upper and lower liquid supply units 20,
When supplied from 22 into the chamber 19, the ultrapure water can be immediately replaced with a new chemical solution, and then the front and back surfaces of the semiconductor wafer 2 are simultaneously washed with the new chemical solution flowing as shown by an arrow in FIG. Remove organics and inorganics such as metals. Drains 21, 26, 2 for cleaning chemicals
7 is discharged and returned to the chemical liquid tank 24, and the chemical liquid in the chemical liquid tank 24 is circulated into the chamber 19 again to clean the semiconductor wafer 2. At this time, if the chemical solution is exhausted, it is appropriately discharged to the outside.
【００２８】第１洗浄機構５Ａ内での洗浄を終了する
と、チャンバー１９が上昇すると共に第１方向転換機構
６Ａに面したストッパー１７がハウジング１の底面へ退
没し、引き続き底面の噴出孔２８から超純水３をハウジ
ング１内へ斜め方向に噴出して半導体ウエハ２を支持ピ
ン１８から浮揚させながら液流に乗せて下流側の第１方
向転換機構６Ａへ搬送する（図６参照）。半導体ウエハ
２を第１方向転換機構６Ａへ搬送するとハウジング１の
底面から突出するストッパーピン２９によって半導体ウ
エハ２の進行を停止させると共に第１洗浄機構５Ａに面
したストッパーピン２９がハウジング１内へ進出し３本
のストッパーピン２９により半導体ウエハ２を支持ピン
３０上で拘束する。次いで、第１リンス機構７Ａに面し
たストッパーピン２９が底面から退没すると共に噴出孔
３１から超純水３を斜め方向へ噴出すると９０°搬送方
向を転換して半導体ウエハ２を超純水３中で浮揚させな
がら液流に乗せて第１リンス機構７Ａへ搬送する。第１
リンス機構７Ａではそのストッパーピン３３及び支持ピ
ン３４で半導体ウエハ２を支持するとチャンバー３２が
下降して半導体ウエハ２を外部から遮断した状態で濯
ぎ、濯いだ後にはチャンバー３２が上昇すると共に、噴
出孔３５から超純水３を噴出して半導体ウエハ２を超純
水３中で浮揚させながら液流に乗せて第２洗浄機構５Ｂ
へ搬送する。When the cleaning in the first cleaning mechanism 5A is completed, the chamber 19 rises and the stopper 17 facing the first direction changing mechanism 6A retracts to the bottom surface of the housing 1 and continues from the ejection holes 28 on the bottom surface. Ultrapure water 3 is jetted into the housing 1 in an oblique direction, floats the semiconductor wafer 2 from the support pins 18, carries it on the liquid flow, and conveys it to the first direction changing mechanism 6A on the downstream side (see FIG. 6). When the semiconductor wafer 2 is transported to the first direction changing mechanism 6A, the stopper pin 29 protruding from the bottom surface of the housing 1 stops the progress of the semiconductor wafer 2 and the stopper pin 29 facing the first cleaning mechanism 5A advances into the housing 1. Then, the semiconductor wafer 2 is restrained on the support pins 30 by the three stopper pins 29. Next, when the stopper pin 29 facing the first rinsing mechanism 7A is retracted from the bottom surface and the ultrapure water 3 is jetted obliquely from the jet hole 31, the conveying direction is changed by 90 ° and the semiconductor wafer 2 is placed in the ultrapure water 3 While being floated inside, it is carried on the liquid flow and conveyed to the first rinse mechanism 7A. First
In the rinse mechanism 7A, when the semiconductor wafer 2 is supported by the stopper pins 33 and the support pins 34, the chamber 32 descends to rinse the semiconductor wafer 2 in a state of being shielded from the outside, and after the rinse, the chamber 32 ascends and jets out. The ultrapure water 3 is ejected from the hole 35, and the semiconductor wafer 2 is levitated in the ultrapure water 3 while being placed on the liquid flow, and the second cleaning mechanism 5B.
Transport to.
【００２９】その後、半導体ウエハ２を超純水３中で浮
揚させながら液流に乗せて図１に矢印で示すように第２
方向転換機構６Ｂ、第２洗浄機構５Ｂ、第２方向転換機
構６Ｂ、第２リンス機構７Ｂ、第３方向転換機構６Ｃ、
第３洗浄機構５Ｃ、第３方向転換機構６Ｃ及び第２リン
ス機構７Ｂを経由して搬出機構８へ搬送し、搬出機構８
から次工程へ引き渡す。この間、各処理機構では上述し
た洗浄、方向転換及びリンス動作を繰り返すが、第２洗
浄機構５Ｂでは第２薬液としてアンモニア／過酸化水素
水をチャンバー内へ供給して半導体ウエハ２を洗浄して
シリコン系のエッチング残渣等を除去し、第３洗浄機構
５Ｃでは第３薬液としてフッ酸及び塩酸／過酸化水素水
をチャンバー内へ供給して半導体ウエハ２を洗浄して無
機物などを除去する。Thereafter, the semiconductor wafer 2 is floated in the ultrapure water 3 and placed on the liquid flow to form a second wafer as indicated by an arrow in FIG.
Direction changing mechanism 6B, second cleaning mechanism 5B, second direction changing mechanism 6B, second rinse mechanism 7B, third direction changing mechanism 6C,
The third cleaning mechanism 5C, the third direction changing mechanism 6C, and the second rinsing mechanism 7B are used for carrying to the carry-out mechanism 8 and carrying-out mechanism 8.
To the next process. During this time, the above-mentioned cleaning, direction change, and rinse operations are repeated in each processing mechanism, but in the second cleaning mechanism 5B, ammonia / hydrogen peroxide solution is supplied into the chamber as the second chemical liquid to clean the semiconductor wafer 2 and silicon. The etching residue and the like of the system are removed, and the third cleaning mechanism 5C supplies hydrofluoric acid and hydrochloric acid / hydrogen peroxide solution as the third chemical solution into the chamber to clean the semiconductor wafer 2 and remove inorganic substances and the like.
【００３０】以上説明したように本実施例では、ウエハ
浮揚プレート１３の噴出孔１４及びハウジング１底面の
噴出孔２８、３１、３５などから噴出する超純水３によ
り半導体ウエハ２を超純水３中で浮揚させ、この液流に
乗せて下流側の第１洗浄機構５Ａなどへ搬送し、この第
１洗浄機構５Ａなどでは半導体ウエハ２をチャンバー１
９などにより搬送用の超純水３から隔離して密閉した
後、第１洗浄機構５Ａ内の超純水３を第１薬液で置換し
た後、この第１薬液を連続的に供給しながら半導体ウエ
ハ２を洗浄し、その後チャンバー１９を上昇させて密閉
を解除した後、次の第１、第２洗浄機構５Ｂ、５Ｃへ半
導体ウエハ２を順次液中搬送し、それぞれの部位で所定
の洗浄を行なうようにしたため、洗浄過程で半導体ウエ
ハ２を外気に一切触れさすことなく、しかも搬送具を用
いずに液流によって半導体ウエハ２を搬送することがで
き、パーティクル等の塵埃を外気から巻き込んで半導体
ウエハ２に付着させたり、搬送具に起因するパーティク
ルを半導体ウエハ２に付着させたりする虞がなく、更に
は搬送具による半導体ウエハ２の損傷を防止することが
できる。また、本実施例によれば、ウエハを搬送する搬
送具を用いないため、搬送具の作動空間は勿論のこと、
搬送具の駆動機構及びその作動空間が不要であるため、
従来と比較して洗浄装置を格段にコンパクト化すること
ができ、洗浄装置の設置スペースを格段に削減すること
ができ、しかも、従来のように洗浄装置上方からのクリ
ーンエアのダウンフローも不要となり、極めて安価に洗
浄装置を設置することができる。更に、本実施例によれ
ば、洗浄後の半導体ウエハ２を乾燥することなく次の洗
浄部へ搬送することができ、アンモニア、フッ化水素等
のエッチング処理液で処理した半導体ウエハ２であって
も、半導体ウエハ２を超純水３中で搬送することにより
半導体ウエハ２に残存するエッチング処理液を超純水３
により希釈除去することができ、残存エッチング処理液
による半導体ウエハ２の不均一なエッチングを防止する
ことができる。As described above, in this embodiment, the semiconductor wafer 2 is converted into the ultrapure water 3 by the ultrapure water 3 ejected from the ejection holes 14 of the wafer floating plate 13 and the ejection holes 28, 31, 35 on the bottom surface of the housing 1. It is levitated in the chamber, is carried on this liquid flow, and is transported to the downstream first cleaning mechanism 5A or the like. In the first cleaning mechanism 5A or the like, the semiconductor wafer 2 is transferred to the chamber 1
After being separated from the ultrapure water 3 for transportation by 9 or the like and hermetically sealed, the ultrapure water 3 in the first cleaning mechanism 5A is replaced with the first chemical liquid, and the semiconductor is continuously supplied while continuously supplying the first chemical liquid. After cleaning the wafer 2 and then raising the chamber 19 to release the airtightness, the semiconductor wafer 2 is sequentially transferred into the liquid to the next first and second cleaning mechanisms 5B and 5C, and predetermined cleaning is performed at each part. Since the semiconductor wafer 2 is carried out by the liquid flow without touching the semiconductor wafer 2 to the outside air during the cleaning process and without using a transfer tool, dust such as particles is trapped from the outside air to the semiconductor. There is no risk of adhering to the wafer 2 or particles due to the transfer tool to the semiconductor wafer 2, and furthermore, it is possible to prevent the semiconductor wafer 2 from being damaged by the transfer tool. Further, according to the present embodiment, since the transfer tool for transferring the wafer is not used, not only the operating space of the transfer tool,
Since the drive mechanism of the transfer tool and its operating space are unnecessary,
The cleaning device can be made much more compact than before, and the installation space for the cleaning device can be significantly reduced, and the downflow of clean air from above the cleaning device is no longer required as in the conventional system. The cleaning device can be installed at an extremely low cost. Furthermore, according to the present embodiment, the semiconductor wafer 2 after cleaning can be transported to the next cleaning unit without being dried, and the semiconductor wafer 2 is processed by an etching processing liquid such as ammonia or hydrogen fluoride. Also, when the semiconductor wafer 2 is transported in the ultrapure water 3, the etching treatment liquid remaining on the semiconductor wafer 2 is removed by the ultrapure water 3
Thus, it is possible to dilute and remove, and it is possible to prevent uneven etching of the semiconductor wafer 2 due to the residual etching treatment liquid.
【００３１】次に、本発明の他の洗浄方法の一実施例に
ついて説明する。この実施例では上述した洗浄装置を用
いる点では同一であるが、洗浄処理液としての第１薬
液、第２薬液及び第３薬液に化学的に安定な粒子を混入
し、粒子の混入した薬液を用いて半導体ウエハ２を洗浄
する点において上記実施例とは異なっている。Next, an embodiment of another cleaning method of the present invention will be described. Although this embodiment is the same in that the above-described cleaning device is used, chemically stable particles are mixed into the first chemical liquid, the second chemical liquid, and the third chemical liquid as the cleaning treatment liquid, and the chemical liquid containing the particles is mixed. It differs from the above-mentioned embodiment in that the semiconductor wafer 2 is cleaned by using it.
【００３２】例えば上記第１洗浄機構５Ａに供給する第
１薬液にシリコン、セラミック等の無機物、あるいは合
成樹脂等の有機物からなる粒子、例えば０.０１〜１０
０μｍの粒子３６を混入し、粒子３６の混入量が例えば
０〜３０重量％、好ましくは１５重量％になるようにす
る。そして、粒子が混入した第１薬液を新薬液槽２３、
薬液槽２４から液体供給部２０、２２を介して半導体ウ
エハ２を密閉したチャンバー１９内へ循環供給する。す
ると、チャンバー１９内では例えば図７に示すように半
導体ウエハ２の表面で第１薬液の液流を作り、これによ
り半導体ウエハ２を洗浄する。この洗浄に際し、第１薬
液中の、ある粒子３６は同図に示すように半導体ウエハ
２の斜め上方から表面に衝突し、その衝撃力でその表面
に付着したレジスト等の塵埃３７を除去する。また、他
のある粒子３６は半導体ウエハ２表面に極めて接近した
位置を平行に流れ、この粒子３６と表面間の隙間での粘
性流により塵埃３７を除去する。つまり、第１薬液のみ
ではその液流は半導体ウエハ２表面で層流を形成し、レ
ジストなどを物理的な作用では除去することができない
が、本実施例では粒子３６の物理的作用によりレジスト
なども積極的に除去することができる。従って、第１薬
液の単なる化学的反応以外にも粒子３６の物理的な作用
により半導体ウエハ２表面の塵埃３７の除去し、洗浄作
用を促進することができる。また、粒子３６が半導体ウ
エハ２の表面に付着したパーティクルなどに接近するこ
とにより粒子３６とパーティクル等との間で静電引力な
どが作用し、これによってもパーティクル等の除去を促
進することができる。For example, in the first chemical liquid supplied to the first cleaning mechanism 5A, particles made of an inorganic substance such as silicon or ceramic, or an organic substance such as a synthetic resin, for example, 0.01 to 10
The particles 36 of 0 μm are mixed so that the mixing amount of the particles 36 is, for example, 0 to 30% by weight, preferably 15% by weight. Then, the first chemical liquid containing particles is added to the new chemical liquid tank 23,
The semiconductor wafer 2 is circulated and supplied from the chemical liquid tank 24 through the liquid supply units 20 and 22 into the closed chamber 19. Then, in the chamber 19, for example, as shown in FIG. 7, a liquid flow of the first chemical liquid is formed on the surface of the semiconductor wafer 2, and the semiconductor wafer 2 is cleaned by this. During this cleaning, certain particles 36 in the first chemical liquid collide with the surface of the semiconductor wafer 2 obliquely from above as shown in the figure, and the impact force removes dust 37 such as resist adhering to the surface. Further, some other particles 36 flow in parallel in a position extremely close to the surface of the semiconductor wafer 2, and the dust 37 is removed by viscous flow in the gap between the particles 36 and the surface. That is, the liquid flow forms a laminar flow on the surface of the semiconductor wafer 2 only with the first chemical liquid, and the resist or the like cannot be removed by physical action, but in the present embodiment, the physical action of the particles 36 causes resist or the like. Can also be actively removed. Therefore, in addition to the simple chemical reaction of the first chemical liquid, the dust 37 on the surface of the semiconductor wafer 2 can be removed and the cleaning action can be promoted by the physical action of the particles 36. Further, when the particles 36 approach particles or the like attached to the surface of the semiconductor wafer 2, an electrostatic attractive force or the like acts between the particles 36 and the particles or the like, which also facilitates removal of the particles or the like. .
【００３３】また、例えば図８に示すように半導体ウエ
ハ２のエッチング作用などによりその表面に絶縁層３８
及びコンタクトホール３９などの凹凸を有する場合に
は、半導体ウエハ２の凹凸にシリコン系などのパーティ
クルが付着している。この場合でも本実施例の洗浄方法
により洗浄すると、第１薬液中の粒子３６は同図に示す
ように半導体ウエハ２の表面に沿って流れ、粒子３６が
コンタクトホール３９などの上を通過する際に、粒子３
６によりコンタクトホール３９内で同図に示すように第
１薬液の渦流を作り、この渦流によりコンタクトホール
３９内に付着したパーティクル４０を上方へ引き出し、
パーティクルを迅速に除去することができる。Further, for example, as shown in FIG. 8, the insulating layer 38 is formed on the surface of the semiconductor wafer 2 by the etching action of the semiconductor wafer 2.
When the semiconductor wafer 2 has irregularities such as the contact holes 39, particles such as silicon particles are attached to the irregularities of the semiconductor wafer 2. Even in this case, when the cleaning method of this embodiment is used for cleaning, the particles 36 in the first chemical liquid flow along the surface of the semiconductor wafer 2 as shown in the figure, and when the particles 36 pass over the contact hole 39 or the like. On the particle 3
6, a vortex flow of the first chemical liquid is generated in the contact hole 39 as shown in the figure, and the vortex flow causes the particles 40 adhering in the contact hole 39 to be drawn upward,
Particles can be removed quickly.
【００３４】また、例えば図９に示すように半導体ウエ
ハ２の表面に絶縁層３８、コンタクトホール３９及び配
線層４０などの凹凸を有する場合に、本実施例の洗浄方
法で半導体ウエハ２を洗浄すると、配線層４０やコンタ
クトホール３８の角に粒子３６が衝突し、同図に破線、
実線で示すように角に丸みを付けてその後の成膜を付き
易くすることができる。If the surface of the semiconductor wafer 2 has irregularities such as the insulating layer 38, the contact hole 39, and the wiring layer 40 as shown in FIG. 9, the semiconductor wafer 2 is cleaned by the cleaning method of this embodiment. , The particles 36 collide with the corners of the wiring layer 40 and the contact hole 38, and the broken line in FIG.
As shown by the solid line, the corners can be rounded to facilitate subsequent film formation.
【００３５】以上説明したように本実施例によれば、第
１薬液中に粒子３６を混入することにより、第１薬液の
化学的な洗浄作用の他に、粒子３６の物理的な作用によ
り洗浄作用を促進し、半導体ウエハ２の洗浄時間を短縮
してスループットを高めることができる。また、他の第
２、第３洗浄機構５Ｂ、５Ｃにおいてもそれぞれの薬液
に粒子３６を混入することにより全体の洗浄時間を従来
と比較して格段に短縮することができ、スループットを
格段に短縮することができる。As described above, according to the present embodiment, by mixing the particles 36 in the first chemical liquid, the chemical cleaning action of the first chemical liquid and the physical action of the particles 36 clean the particles. The action can be promoted, the cleaning time of the semiconductor wafer 2 can be shortened, and the throughput can be increased. Further, also in the other second and third cleaning mechanisms 5B and 5C, by mixing the particles 36 in the respective chemicals, the entire cleaning time can be markedly shortened as compared with the conventional one, and the throughput is markedly shortened. can do.
【００３６】また、本発明の洗浄装置は図１０に示すよ
うに第１方向転換機構６Ａ、第２方向転換機構６Ｂ、第
３方向転換機構６Ｃを省略し、半導体ウエハ２を超純水
により各洗浄機構５Ａ、５Ｂ、５Ｃから各リンス機構７
Ａ、７Ｂ、７Ｃへ直接搬送するように構成したものであ
っても良い。Further, in the cleaning apparatus of the present invention, as shown in FIG. 10, the first direction changing mechanism 6A, the second direction changing mechanism 6B, and the third direction changing mechanism 6C are omitted, and the semiconductor wafer 2 is made of ultrapure water. Cleaning mechanism 5A, 5B, 5C to each rinsing mechanism 7
It may be configured to be directly conveyed to A, 7B, 7C.
【００３７】尚、本発明は、上記各実施例に何等制限さ
れるものではなく、洗浄機構の種類、設置場所などは必
要に応じて適宜設計変更することができる。また、搬送
用の液体も超純水に制限されるものではない。It should be noted that the present invention is not limited to the above-mentioned embodiments, and the type of the cleaning mechanism, the installation location, etc. can be appropriately changed in design as necessary. Further, the liquid for transportation is not limited to ultrapure water.
【００３８】[0038]
【発明の効果】本発明の請求項１に記載の発明によれ
ば、被処理体の搬送及び洗浄を全て超純水等の液体中で
行なうようにしたため、被処理体を洗浄する際に、被処
理体を搬送具や外気に触れることなく洗浄箇所へ搬送し
て搬送具や外気に基づくパーティクル等の塵埃による汚
染を防止することができる洗浄方法を提供することがで
きる。According to the invention described in claim 1 of the present invention, since the object to be processed and the cleaning are all carried out in a liquid such as ultrapure water, when cleaning the object to be processed, It is possible to provide a cleaning method capable of transporting an object to be cleaned to a cleaning location without touching the transport tool or the outside air and preventing contamination by dust such as particles due to the transport tool or the outside air.
【００３９】また、本発明の請求項２に記載の発明によ
れば、洗浄処理液に混入する粒子を洗浄処理液と共に被
処理体へ衝突させて被処理体を洗浄するようにしたた
め、洗浄処理液の化学的作用による洗浄以外にも、粒子
の衝突などの物理的作用によって洗浄時間を短縮してス
ループットを高めることができる洗浄方法を提供するこ
とができる。According to the second aspect of the present invention, since the particles mixed in the cleaning treatment liquid are made to collide with the object to be treated together with the cleaning treatment liquid to clean the object to be treated, the cleaning treatment is performed. It is possible to provide a cleaning method capable of shortening the cleaning time and increasing the throughput by a physical action such as collision of particles in addition to the washing by the chemical action of the liquid.
【００４０】また、本発明の請求項３に記載の発明によ
れば、請求項２に記載の発明において、粒径が０.０１
〜１００μｍの粒子を用いるようにしたため、被処理体
の洗浄後には粒子を被処理体から確実に除去できる洗浄
方法を提供することができる。According to the invention of claim 3 of the present invention, in the invention of claim 2, the particle size is 0.01.
Since the particles having a particle size of ˜100 μm are used, it is possible to provide a cleaning method capable of reliably removing the particles from the object to be processed after cleaning the object to be processed.
【００４１】また、本発明の請求項４に記載の発明によ
れば、被処理体を搬入する搬入手段と、この搬入手段に
より液体の中へ搬入された被処理体に液中での揚力及び
液流を付与する液流搬送手段と、この液流搬送手段によ
り搬送された被処理体を液体から隔離、密閉して洗浄す
る少なくとも一つの洗浄手段と、この洗浄手段により洗
浄された被処理体を次工程へ搬出する搬出手段とを設け
たため、被処理体を洗浄する際に、被処理体を搬送具や
外気に触れることなく洗浄箇所へ搬送して搬送具や外気
に基づくパーティクル等の塵埃による汚染を防止するこ
とができる洗浄装置を提供することができる。According to the fourth aspect of the present invention, the carrying-in means for carrying in the object to be processed, and the lift in the liquid to the object to be processed carried into the liquid by the carrying-in means and Liquid flow transfer means for applying a liquid flow, at least one cleaning means for separating and sealing the object to be processed transferred by the liquid flow transfer means from the liquid, and the object to be processed cleaned by this cleaning means Since it is provided with a carry-out means for carrying out the object to the next step, when cleaning the object to be processed, the object to be processed is transferred to the cleaning location without touching the object or the outside air and dust such as particles due to the object or the outside air is conveyed. It is possible to provide a cleaning device capable of preventing contamination due to.
【００４２】また、本発明の請求項５に記載の発明によ
れば、請求項４に記載の発明において、上記洗浄手段
は、被処理体を保持する保持手段と、この保持手段によ
り保持された被処理体を上記液体から密閉隔離する密閉
手段と、この密閉手段により密閉された被処理体に向け
て洗浄処理液を連続的に供給し、被処理体を浮揚させた
状態で洗浄する洗浄処理液供給手段とを備えたものとし
て構成したため、搬送用液体中で搬送されて来る被処理
体をその液体から確実に遮断した状態で被処理体を洗浄
できる洗浄装置を提供することができる。According to a fifth aspect of the present invention, in the invention according to the fourth aspect, the cleaning means is holding means for holding an object to be processed, and the holding means holds the cleaning means. A sealing means for hermetically separating the object to be processed from the liquid, and a cleaning treatment for continuously supplying the cleaning solution to the object sealed by the sealing means and cleaning the object in a levitated state. Since it is configured to include the liquid supply means, it is possible to provide a cleaning device capable of cleaning the target object conveyed in the transfer liquid while the target object is reliably shielded from the liquid.
【図１】本発明の洗浄装置の一実施例を示す平面図であ
る。FIG. 1 is a plan view showing an embodiment of a cleaning apparatus of the present invention.
【図２】図１に示す洗浄装置の半導体ウエハの搬入機構
を示す断面図である。FIG. 2 is a cross-sectional view showing a semiconductor wafer loading mechanism of the cleaning apparatus shown in FIG.
【図３】図２に示す搬入機構の平面図である。3 is a plan view of the carry-in mechanism shown in FIG. 2. FIG.
【図４】図１に示す洗浄装置の洗浄機構を示す斜視図で
ある。FIG. 4 is a perspective view showing a cleaning mechanism of the cleaning apparatus shown in FIG.
【図５】図４に示す洗浄機構を示す断面図である。5 is a cross-sectional view showing the cleaning mechanism shown in FIG.
【図６】図１に示す洗浄装置をＶＩ−ＶＩに沿って切断
した断面での本発明の洗浄方法の一実施例の洗浄動作を
説明するための動作説明図である。FIG. 6 is an operation explanatory view for explaining the cleaning operation of the embodiment of the cleaning method of the present invention in a cross section of the cleaning apparatus shown in FIG. 1 taken along line VI-VI.
【図７】本発明の他の洗浄方法の一実施例における洗浄
動作を説明するための動作説明図である。FIG. 7 is an operation explanatory view for explaining a cleaning operation in another embodiment of the cleaning method of the present invention.
【図８】本発明の他の洗浄方法の一実施例における他の
洗浄動作を説明するための動作説明図である。FIG. 8 is an operation explanatory view for explaining another cleaning operation in the embodiment of the other cleaning method of the present invention.
【図９】本発明の他の洗浄方法の一実施例における更に
他の洗浄動作を説明するための動作説明図である。FIG. 9 is an operation explanatory view for explaining still another cleaning operation in the embodiment of the other cleaning method of the present invention.
【図１０】本発明の洗浄装置の他の実施例を示す平面図
である。FIG. 10 is a plan view showing another embodiment of the cleaning apparatus of the present invention.
２ 半導体ウエハ（被処理体） ３ 超純水（液体） ４ 搬入機構（搬入手段） ５Ａ 第１洗浄機構（洗浄手段） ５Ｂ 第２洗浄機構（洗浄手段） ５Ｃ 第３洗浄機構（洗浄手段） ８ 搬出機構（搬出手段） １３ ウエハ浮揚プレート（液流搬送手段） １９ チャンバー（密閉手段） １７ ストッパーピン（保持手段） １８ 支持ピン（保持手段） ２０ 液体供給部（洗浄処理液供給手段） ２２ 液体供給部（洗浄処理液供給手段） ２３ 新薬液槽（洗浄処理液供給手段） ２４ 薬液槽（洗浄処理液供給手段） ２５ 純水槽 ２８ 噴出孔（液流搬送手段） ３１ 噴出孔（液流搬送手段） ３５ 噴出孔（液流搬送手段） 2 semiconductor wafer (object to be processed) 3 ultrapure water (liquid) 4 loading mechanism (loading means) 5A first cleaning mechanism (cleaning means) 5B second cleaning mechanism (cleaning means) 5C third cleaning mechanism (cleaning means) 8 Unloading Mechanism (Unloading Means) 13 Wafer Floating Plate (Liquid Flow Transfer Means) 19 Chamber (Sealing Means) 17 Stopper Pins (Holding Means) 18 Support Pins (Holding Means) 20 Liquid Supply Section (Cleaning Solution Supply Means) 22 Liquid Supply Part (cleaning treatment liquid supply means) 23 New chemical liquid tank (cleaning treatment liquid supply means) 24 Chemical liquid tank (cleaning treatment liquid supply means) 25 Pure water tank 28 Jet holes (liquid flow transfer means) 31 Jet holes (liquid flow transfer means) 35 ejection holes (liquid flow transfer means)
Claims (5)
体に所定方向への液流を付与して被処理体をその液流の
下流側にある洗浄部へ搬送し、この洗浄部では上記被処
理体を上記液体から隔離して密閉した後、この洗浄部内
の上記液体を洗浄処理液で置換した後、この洗浄処理液
を連続的に供給しながら被処理体を洗浄し、その後上記
洗浄部の密閉を解除した後必要に応じて次の洗浄部へ被
処理体を同様に液中搬送し、同様の手順により洗浄を繰
り返すことを特徴とする洗浄方法。1. An object to be processed is levitated in a liquid, a liquid flow in a predetermined direction is applied to the liquid, and the object to be processed is conveyed to a cleaning unit on the downstream side of the liquid flow. Then, after separating the object to be treated from the liquid and sealing it, after replacing the liquid in the cleaning section with a cleaning treatment liquid, the object to be treated is washed while continuously supplying the cleaning treatment liquid, and then A cleaning method characterized in that after the sealing of the cleaning section is released, the object to be processed is similarly conveyed in the liquid to the next cleaning section and the cleaning is repeated by the same procedure.
を有する洗浄部内に配置した後、粒子を混入した洗浄処
理液を上記洗浄部内の被処理体に向けて連続的に供給し
て洗浄処理液の液流を作り、粒子を含む液流により被処
理体を洗浄することを特徴とする洗浄方法。2. The object to be processed is placed in a cleaning section having a cleaning space which is slightly larger than the object to be processed, and a cleaning solution containing particles is continuously supplied toward the object to be processed in the cleaning section. A cleaning method comprising forming a liquid flow of a liquid and cleaning the object to be processed with the liquid flow containing particles.
いることを特徴とする請求項２に記載の洗浄方法。3. The cleaning method according to claim 2, wherein particles having a particle size of 0.01 to 100 μm are used.
入手段により液体の中へ搬入された被処理体に液中での
揚力及び液流を付与する液流搬送手段と、この液流搬送
手段により搬送された被処理体を液体から隔離、密閉し
て洗浄する少なくとも一つの洗浄手段と、この洗浄手段
により洗浄された被処理体を次工程へ搬出する搬出手段
とを備えたことを特徴とする洗浄装置。4. A carrying-in means for carrying in an object to be processed, a liquid flow carrying means for giving a lift and a liquid flow in the liquid to the object carried into the liquid by the carrying-in means, and the liquid flow. It is provided with at least one cleaning means for separating and sealing the object to be processed conveyed by the conveying means from the liquid, and for carrying out the object to be processed cleaned by the cleaning means to the next step. A characteristic cleaning device.
持手段と、この保持手段により保持された被処理体を上
記液体から密閉隔離する密閉手段と、この密閉手段によ
り密閉された被処理体に向けて洗浄処理液を連続的に供
給し、被処理体を浮揚させた状態で洗浄する洗浄処理液
供給手段とを備えたことを特徴とする請求項４に記載の
洗浄装置。5. The cleaning means comprises a holding means for holding an object to be processed, a sealing means for hermetically separating the object to be processed held by the holding means from the liquid, and a processing object hermetically sealed by the sealing means. The cleaning apparatus according to claim 4, further comprising a cleaning processing solution supply unit that continuously supplies the cleaning processing solution toward the body and cleans the object to be processed in a floating state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5340634A JP3057163B2 (en) | 1993-12-08 | 1993-12-08 | Cleaning method and cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5340634A JP3057163B2 (en) | 1993-12-08 | 1993-12-08 | Cleaning method and cleaning device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07161673A true JPH07161673A (en) | 1995-06-23 |
| JP3057163B2 JP3057163B2 (en) | 2000-06-26 |
Family
ID=18338855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5340634A Expired - Fee Related JP3057163B2 (en) | 1993-12-08 | 1993-12-08 | Cleaning method and cleaning device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3057163B2 (en) |
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|---|---|---|---|---|
| JP2007208246A (en) * | 2005-12-30 | 2007-08-16 | Lam Res Corp | Method and material for cleaning substrate |
| JP2007293090A (en) * | 2006-04-26 | 2007-11-08 | Toppan Printing Co Ltd | Method for manufacturing color filter, and the color filter |
| JP2008047842A (en) * | 2006-08-21 | 2008-02-28 | Jsr Corp | Composition for cleaning, cleaning method, and manufacturing method of semiconductor device |
| JP2008270824A (en) * | 2008-05-09 | 2008-11-06 | Renesas Technology Corp | Method for manufacturing semiconductor device |
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| US8716210B2 (en) | 2005-12-30 | 2014-05-06 | Lam Research Corporation | Material for cleaning a substrate |
| KR101414429B1 (en) * | 2005-12-30 | 2014-07-01 | 램 리써치 코포레이션 | Method and material for cleaning a substrate |
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| JP2008270824A (en) * | 2008-05-09 | 2008-11-06 | Renesas Technology Corp | Method for manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3057163B2 (en) | 2000-06-26 |
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