JPH07153907A - Power semiconductor module - Google Patents

Power semiconductor module

Info

Publication number
JPH07153907A
JPH07153907A JP32621193A JP32621193A JPH07153907A JP H07153907 A JPH07153907 A JP H07153907A JP 32621193 A JP32621193 A JP 32621193A JP 32621193 A JP32621193 A JP 32621193A JP H07153907 A JPH07153907 A JP H07153907A
Authority
JP
Japan
Prior art keywords
power semiconductor
case
external lead
semiconductor module
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP32621193A
Other languages
Japanese (ja)
Other versions
JP2720009B2 (en
Inventor
Yukiyoshi Nakamura
行良 中村
Toyoji Yasuda
豊二 安田
Toshihide Tokuda
俊秀 徳田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sansha Electric Manufacturing Co Ltd
Original Assignee
Sansha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sansha Electric Manufacturing Co Ltd filed Critical Sansha Electric Manufacturing Co Ltd
Priority to JP32621193A priority Critical patent/JP2720009B2/en
Publication of JPH07153907A publication Critical patent/JPH07153907A/en
Application granted granted Critical
Publication of JP2720009B2 publication Critical patent/JP2720009B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To provide a semiconductor module, wherein workability is improved by rigidly fixing an external lead-out terminal to a resin case. CONSTITUTION:This module is constituted of a holding part, wherein the side wall of a resin case extends to the inside and an opening part 4d is provided at the center, and a supporting stage 4b, which is provided at the lower part of the holding part, extends to the inside and has a projection at a part of the center. Furthermore, an external lead-out terminal 10 is constituted of a notch part 10a, whose width is smaller than the opening part of the holding part, and a bent part 10c, which is provided at the lower part of the notch part, extends to the inside and has a hole or recess part that is engaged with the projection.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、内部に電力用半導体
チップとこの半導体チップを制御する制御部品を搭載
し、さらに樹脂封止して得られる電力用半導体モジュー
ルに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor module obtained by mounting a power semiconductor chip and a control component for controlling the semiconductor chip therein, and further sealing with a resin.

【0002】[0002]

【従来の技術】従来の電力用半導体モジュールとして
は、図3の断面図に示す構造のものがある。図において
2は、一方の面に絶縁板6を有する金属基板であり、こ
の絶縁板6上に銅回路(図示せず)が接着配置されてい
る。そして、金属基板2の銅回路上の必要箇所にクリー
ム半田を印刷し、クリーム半田上に電力用半導体チップ
8及び表面実装部品である抵抗、IC等の制御部品並び
に制御回路との接続ピン12及び外部引き出し端子10
を搭載し、リフロー炉で半田付けを行う。この後、電力
用半導体チップ8と必要な銅回路6とワイヤボンディン
グを行う。
2. Description of the Related Art As a conventional power semiconductor module, there is one having a structure shown in a sectional view of FIG. In the figure, 2 is a metal substrate having an insulating plate 6 on one surface, and a copper circuit (not shown) is bonded and arranged on the insulating plate 6. Then, cream solder is printed on a required portion of the copper circuit of the metal substrate 2, and the power semiconductor chip 8 and control components such as resistors and ICs which are surface mounting components, and connection pins 12 with the control circuit are printed on the cream solder. External lead terminal 10
And solder in a reflow oven. After that, wire bonding is performed with the power semiconductor chip 8 and the necessary copper circuit 6.

【0003】次に金属基板の周縁を後で述べるプリント
回路取付突部(図示せず)と一体成形した樹脂ケース2
4で覆い、側壁を金属基板にシリコンゴム等の接着剤で
接着する。そして、ケース24の上部からシリコンゴム
を充填し、120〜150℃で加熱硬化して、シリコン
ゴム層26を形成する。ついで、シリコンゴム層26の
上部にエポキシ樹脂を充填し、120〜150℃で加熱
硬化してエポキシ樹脂層28を形成する。
Next, the resin case 2 in which the peripheral edge of the metal substrate is integrally formed with a printed circuit mounting protrusion (not shown) described later.
4, and the side wall is adhered to the metal substrate with an adhesive such as silicon rubber. Then, silicone rubber is filled from the upper part of the case 24 and heated and cured at 120 to 150 ° C. to form the silicone rubber layer 26. Then, an epoxy resin is filled in the upper part of the silicone rubber layer 26 and is heated and cured at 120 to 150 ° C. to form an epoxy resin layer 28.

【0004】一方、電力用半導体チップを制御する制御
部品をプリント配線板に搭載し、半田付してプリント回
路14を構成する。このプリント回路14に設けた穴
(図示せず)をケースのプリント回路取付突起(図示せ
ず)に係合し、かつ接続ピン12をプリント回路14に
接続し、半田付けを行う。そして、ケース上部からエポ
キシ樹脂を充填し、120〜150℃で加熱硬化させ上
部のエポキシ樹脂層30を形成する。
On the other hand, a control component for controlling the power semiconductor chip is mounted on a printed wiring board and soldered to form the printed circuit 14. A hole (not shown) provided in the printed circuit 14 is engaged with a printed circuit mounting protrusion (not shown) of the case, and the connecting pin 12 is connected to the printed circuit 14 for soldering. Then, the epoxy resin is filled from the upper part of the case and heated and cured at 120 to 150 ° C. to form the upper epoxy resin layer 30.

【0005】[0005]

【発明が解決しようとする課題】上記のような電力用半
導体モジュールを得るに当たって、樹脂ケースには外部
引き出し端子10を固定するために挿通する穴24aを
設けている。この端子10は複数個設けられており、数
多くの穴24aに一端が固定された外部引き出し端子1
0を挿通するのは作業性の悪いものであった。そこで、
外部引き出し端子を銅回路6に半田付けする前に、まず
複数の外部引き出し端子10をそれぞれのケース24の
穴24aに挿通し、ケースを金属基板12に接着し、外
部引き出し端子10を銅回路6に半田付けする試みがな
されているが、外部引き出し端子10をケース24の穴
24aに挿通後、金属基板にセットするまでの搬送時に
外れることがあり、作業性の悪いものであった。また、
外部引き出し端子をケース製造時にケースと同時にモー
ルド形成することもあるが、外部引き出し端子をセット
するのに時間が掛かるなど作業性が悪いものであった。
In obtaining the above power semiconductor module, the resin case is provided with a hole 24a through which the external lead terminal 10 is fixed. A plurality of these terminals 10 are provided, and one end is fixed to a large number of holes 24a.
The workability of inserting 0 was poor. Therefore,
Before soldering the external lead terminals to the copper circuit 6, first, the plurality of external lead terminals 10 are inserted into the holes 24a of each case 24, the cases are bonded to the metal substrate 12, and the external lead terminals 10 are connected to the copper circuit 6. Although an attempt has been made to solder it, the external lead-out terminal 10 may be detached during the transportation after being inserted into the hole 24a of the case 24 until it is set on the metal substrate, and the workability is poor. Also,
The external lead terminals may be molded at the same time as the case when the case is manufactured, but the workability is poor because it takes time to set the external lead terminals.

【0006】[0006]

【課題を解決するための手段】本発明は、銅回路が配置
された絶縁板を有する金属基板と、上記銅回路上に載置
固定される電力用半導体チップと、一方端がケース上部
外方に引き出され他方端が上記銅回路に接続される外部
引き出し端子とが上部に開口部を有する樹脂ケースで覆
いケース内を樹脂封止される電力用半導体モジュールに
おいて、上記樹脂ケースの側壁に、内部に向かって伸び
中央に開放部を有する挾持部と、上記挾持部の下部に設
けられ内向して伸び一部が上部に突出する突起を有する
支持台とが設けられ、上記外部引き出し端子に上記挾持
部の開放部より小さい幅の切欠部と、上記切欠部の下部
に設けられ内向して伸び一部が上記突起に係合する穴叉
は凹部を有する折り曲げ部とが設けられたものである。
According to the present invention, there is provided a metal substrate having an insulating plate on which a copper circuit is arranged, a power semiconductor chip mounted and fixed on the copper circuit, and one end of which is outside the upper part of the case. In the power semiconductor module in which the external lead-out terminal connected to the copper circuit and the other end of which is covered with a resin case having an opening at the top is resin-sealed in the case, A holding part having an opening at the center and an inwardly extending projection part of which protrudes upward and is provided at the lower part of the holding part. A cutout portion having a width smaller than the open portion of the portion, and a bent portion provided in the lower portion of the cutout portion and having a hole or a recessed portion that extends inward and engages with the protrusion are provided.

【0007】また、上記突起が穴との係合後かしめられ
た突起である。
Further, the above-mentioned projection is a projection crimped after engaging with the hole.

【0008】また、上記樹脂ケースの側壁に、内部に向
かって伸び中央に開放部を有する挾持部と、上記挾持部
の下部に設けられ内向して伸び一部が穴叉は凹部を有す
る支持台とが設けられ、上記外部引き出し端子に上記挾
持部の開放部より小さい幅の切欠部と、上記切欠部の下
部に設けられ内向して伸び一部が上記穴叉は凹部に係合
する突起を有する折り曲げ部とが設けられたものであ
る。
[0008] Further, a support base provided on a side wall of the resin case, which has an opening portion at its center and extends toward the inside, and an inwardly extending portion provided at the lower portion of the holding portion, having a hole or a recess. And a cutout portion having a width smaller than the open portion of the sandwiching portion, and a protrusion provided in the lower portion of the cutout portion and extending inwardly and engaging with the hole or the concave portion. And a bent portion having the same.

【0009】[0009]

【作用】樹脂ケースの側壁の挾持部の開放部に外部引き
出し端子の切欠部を通し、外部引き出し端子を下げる
と、突起が穴又は凹部に係合し、かつ支持台に外部引き
出し端子の折り曲げ部が支持され、外部引き出し端子が
樹脂ケースに強固に支持される。
When the cutout portion of the external lead terminal is passed through the open portion of the holding portion of the side wall of the resin case and the external lead terminal is lowered, the protrusion engages with the hole or the recess and the bent portion of the external lead terminal on the support base. Is supported, and the external lead terminal is firmly supported by the resin case.

【0010】また、突起をかしめることによって外部引
き出し端子がケースに強固に固定される。
Further, by crimping the protrusion, the external lead terminal is firmly fixed to the case.

【0011】[0011]

【実施例】この発明による電力用半導体モジュールの一
実施例を図1及び図2に示す。なお、図3に示した従来
のものと同等部分には同一記号を付した。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a power semiconductor module according to the present invention is shown in FIGS. The same parts as those of the conventional one shown in FIG.

【0012】4は樹脂ケースで、この樹脂ケース4は内
部に向かって伸び、中央に開放部4dを有する挾持部4
aと、この挾持部4aの下部に設けられ内部に向かって
伸びる支持台4bにより構成され、さらにこの支持台4
bの中央の一部に上部に突出する突起4cが設けられて
いる。また、10は外部引き出し端子で、挾持部4aの
開放部より小さい幅の切欠部10aと、切欠部10aの
下部に設けられて内部に向かって伸びる折り曲げ部10
cとにより構成され、さらにこの折り曲げ部10cには
上記の突起4cと係合できる穴叉は凹部10bが設けら
れている。
Reference numeral 4 denotes a resin case. The resin case 4 extends inward and has a holding portion 4 having an opening 4d at the center.
a and a support base 4b provided at a lower portion of the holding portion 4a and extending inward.
A protrusion 4c protruding upward is provided at a part of the center of b. Reference numeral 10 denotes an external lead terminal, which is a cutout portion 10a having a width smaller than the open portion of the holding portion 4a, and a bent portion 10 which is provided below the cutout portion 10a and extends inward.
Further, the bent portion 10c is provided with a hole or a recess 10b capable of engaging with the protrusion 4c.

【0013】そして、樹脂ケース4の側壁の挾持部4a
の開放部4dに外部引き出し端子10の切欠部10aを
通し、外部引き出し端子10を下げると、支持台4bに
外部引き出し端子10の折り曲げ部10bが支持される
とともに、支持台4bの突起4cが外部引き出し端子1
0の穴又は凹部10bに係合し、外部引き出し端子10
が樹脂ケース4に支持される。また、突起を打ちかしめ
ると、外部引き出し端子は樹脂ケースに強固に支持され
る。
Then, the holding portion 4a on the side wall of the resin case 4
When the cutout portion 10a of the external lead-out terminal 10 is passed through the open portion 4d and the external lead-out terminal 10 is lowered, the bent portion 10b of the external lead-out terminal 10 is supported by the support base 4b and the projection 4c of the support base 4b is externally attached. Lead-out terminal 1
The external lead-out terminal 10 by engaging with the hole 0 or the recess 10b.
Are supported by the resin case 4. When the protrusions are struck, the external lead terminals are firmly supported by the resin case.

【0014】一方、一面がセラミックなどの絶縁板6上
に接着配置された銅回路(図示せず)の必要な箇所に電
力用半導体チップ8が半田付けされ、電力用半導体チッ
プ8と銅回路間にワイヤボンディングを施しスタックが
形成される。
On the other hand, a power semiconductor chip 8 is soldered to a necessary portion of a copper circuit (not shown), one surface of which is adhered on an insulating plate 6 made of ceramic or the like. Wire bonding is performed to form a stack.

【0015】そして、銅回路上の必要箇所にクリーム半
田を印刷し、さらに金属基板2の周縁をシリコンゴム等
の接着材を塗布する。このクリーム半田上に、上述した
スタックの他、表面実装部品の抵抗、半導体素子等の制
御部品及び制御回路との接続用の接続ピン12並びに接
着材上に上述した外部引き出し端子が支持された樹脂ケ
ースを載置し、リフロー炉で半田付け及び接着を行う。
なお、外部引き出し端子も銅回路に同時に半田付けされ
る。
Then, cream solder is printed on a necessary portion on the copper circuit, and an adhesive such as silicon rubber is applied to the peripheral edge of the metal substrate 2. On this cream solder, in addition to the above-mentioned stack, the resin for supporting the resistance of the surface-mounted component, the connection pin 12 for connecting to the control component such as a semiconductor element and the control circuit, and the above-mentioned external lead terminal on the adhesive material Place the case and solder and bond in a reflow oven.
The external lead terminal is also soldered to the copper circuit at the same time.

【0016】そして、ケース4の上部からシリコンゴム
を充填し、120〜150℃で加熱硬化して、シリコン
ゴム層26を形成する。ついで、シリコンゴム層26の
上部にエポキシ樹脂を充填し、120〜150℃で加熱
硬化してエポキシ樹脂層28を形成する。さらに別途電
力用半導体チップを制御する制御部品を搭載したプリン
ト回路14をその内部に設けた穴を樹脂ケース4から張
り出したプリント回路取付突起(図示せず)に係合し、
接続ピン12をプリント回路14に接続し、半田付けを
行う。そして、ケース上部からエポキシ樹脂を充填し、
加熱硬化させ上部のエポキシ樹脂層30を形成し、電力
用半導体モジュールを得る。
Then, silicone rubber is filled from the upper part of the case 4 and heat-cured at 120 to 150 ° C. to form the silicone rubber layer 26. Then, an epoxy resin is filled in the upper part of the silicone rubber layer 26 and is heated and cured at 120 to 150 ° C. to form an epoxy resin layer 28. Further, a printed circuit 14 on which a control component for separately controlling the power semiconductor chip is mounted is engaged with a printed circuit mounting protrusion (not shown) protruding from the resin case 4 in a hole provided therein.
The connection pins 12 are connected to the printed circuit 14 and soldered. Then, fill the case with epoxy resin,
It is heated and cured to form the upper epoxy resin layer 30 to obtain a power semiconductor module.

【0017】上記実施例では、ケース4の支持部4bに
突起4cを設け、外部引き出し端子10の折り曲げ部1
0cに穴又は凹部10bを設けていたが、逆に折り曲げ
部10cに突起を設け、支持部4bに上記突起に係合で
きる穴又は凹部を設けてもよい。また、上記実施例は電
力用半導体チップをシリコンゴム層26とエポキシ樹脂
層28によりモールドされているがエポキシ樹脂のみモ
ールドしてもよい。
In the above embodiment, the protrusion 4c is provided on the support portion 4b of the case 4, and the bent portion 1 of the external lead terminal 10 is provided.
Although the hole or the concave portion 10b is provided in 0c, the bent portion 10c may be provided with a projection and the supporting portion 4b may be provided with a hole or a concave portion that can be engaged with the projection. Further, in the above embodiment, the power semiconductor chip is molded by the silicon rubber layer 26 and the epoxy resin layer 28, but only the epoxy resin may be molded.

【0018】[0018]

【発明の効果】以上のように、本発明によれば樹脂ケー
スに外部引き出し端子を挾持する挾持部を設け、この挾
持部は中央が開放され、この開放部に端子の切欠部を通
して端子を挾持部内にはめ込み、端子を下げると、ケー
スの突起が端子の穴又は凹部に係合し、さらに端子の折
り曲げ部が樹脂ケースの支持台により支持され、端子が
樹脂ケースに簡単に強固に支持される。これにより搬送
作業時に端子がケースから外れるとこもなく、電力用半
導体モジュールの製造が容易となる。
As described above, according to the present invention, the resin case is provided with the holding portion for holding the external lead-out terminal, and the holding portion is opened at the center, and the terminal is held through the cutout portion of the terminal. When it is fitted into the part and the terminal is lowered, the protrusion of the case engages with the hole or recess of the terminal, and the bent part of the terminal is supported by the support base of the resin case, and the terminal is easily and firmly supported by the resin case. . As a result, the terminal does not come off from the case during the transportation work, and the manufacturing of the power semiconductor module becomes easy.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の電力用半導体モジュールの一実施例の
樹脂ケースと外部引き出し端子との係合を説明する斜視
図である。
FIG. 1 is a perspective view illustrating the engagement between a resin case and an external lead terminal of an embodiment of a power semiconductor module of the present invention.

【図2】本発明の電力用半導体モジュールの一実施例を
示す断面図である。
FIG. 2 is a sectional view showing an embodiment of a power semiconductor module of the present invention.

【図3】従来の電力用半導体モジュールの断面図であ
る。
FIG. 3 is a sectional view of a conventional power semiconductor module.

【符号の説明】[Explanation of symbols]

2 金属基板 4 樹脂ケース 4a 挾持部 4b 支持台 4c 突起 4d 開放部 6 絶縁板 8 電力用半導体チップ 10 外部引き出し端子 10a 切欠部 10b 穴又は凹部 10c 折り曲げ部 12 接続ピン 14 プリント回路 26 シリコンゴム層 28,30 エポキシ樹脂層 2 metal substrate 4 resin case 4a holding part 4b support base 4c protrusion 4d open part 6 insulating plate 8 power semiconductor chip 10 external lead terminal 10a cutout part 10b hole or recessed part 10c bent part 12 connection pin 14 printed circuit 26 silicon rubber layer 28 , 30 Epoxy resin layer

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 銅回路が配置された絶縁板を有する金属
基板と、上記銅回路上に載置固定される電力用半導体チ
ップと、一方端がケース上部外方に引き出され他方端が
上記銅回路に接続される外部引き出し端子とが上部に開
口部を有する樹脂ケースで覆いケース内を樹脂封止され
る電力用半導体モジュールにおいて、上記樹脂ケースの
側壁に、内部に向かって伸び中央に開放部を有する挾持
部と、上記挾持部の下部に設けられ内向して伸び一部が
上部に突出する突起を有する支持台とが設けられ、上記
外部引き出し端子に上記挾持部の開放部より小さい幅の
切欠部と、上記切欠部の下部に設けられ内向して伸び一
部が上記突起に係合する穴叉は凹部を有する折り曲げ部
とが設けられたことを特徴とする電力半導体モジュー
ル。
1. A metal substrate having an insulating plate on which a copper circuit is arranged, a power semiconductor chip mounted and fixed on the copper circuit, one end of which is pulled out of the upper part of the case and the other end of which is the copper. In a power semiconductor module in which an external lead terminal connected to a circuit is covered with a resin case having an opening at the top, and the inside of the case is resin-sealed, a side wall of the resin case extends inward, and an opening is formed at the center. And a support base having a protrusion that is provided in a lower portion of the holding portion and that extends inwardly and a part of which protrudes upward is provided, and the external lead terminal has a width smaller than the opening portion of the holding portion. A power semiconductor module, comprising: a cutout portion; and a bent portion that is provided in a lower portion of the cutout portion and has an inwardly extending portion that has a hole or a concave portion that engages with the protrusion.
【請求項2】 上記突起が上記穴との係合後かしめられ
た突起である請求項1の電力用半導体モジュール。
2. The power semiconductor module according to claim 1, wherein the protrusion is a protrusion crimped after engaging with the hole.
【請求項3】 銅回路が配置された絶縁板を有する金属
基板と、上記銅回路上に載置固定される電力用半導体チ
ップと、一方端がケース上部外方に引き出され他方端が
上記銅回路に接続される外部引き出し端子とが上部に開
口部を有する樹脂ケースで覆いケース内を樹脂封止され
る電力用半導体モジュールにおいて、上記樹脂ケースの
側壁に、内部に向かって伸び中央に開放部を有する挾持
部と、上記挾持部の下部に設けられ内向して伸び一部が
穴または凹部を有する支持台とが設けられ、上記外部引
き出し端子に上記挾持部の開放部より小さい幅の切欠部
と、上記切欠部の下部に設けられ内向して伸び一部が上
記穴または凹部に係合する突起を有する折り曲げ部とが
設けられたことを特徴とする電力半導体モジュール。
3. A metal substrate having an insulating plate on which a copper circuit is arranged, a power semiconductor chip mounted and fixed on the copper circuit, one end of which is pulled out of the upper part of the case, and the other end of which is the copper. In a power semiconductor module in which an external lead terminal connected to a circuit is covered with a resin case having an opening at the top, and the inside of the case is resin-sealed, a side wall of the resin case extends inward, and an opening is formed at the center. And a support base provided in a lower portion of the holding portion and extending inwardly and having a hole or a concave portion inwardly, the external lead terminal has a notch portion having a width smaller than an opening portion of the holding portion. And a bent portion provided at a lower portion of the cutout portion and having an inwardly extending projection having a part engaging with the hole or the concave portion.
JP32621193A 1993-11-29 1993-11-29 Power semiconductor module Expired - Lifetime JP2720009B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32621193A JP2720009B2 (en) 1993-11-29 1993-11-29 Power semiconductor module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32621193A JP2720009B2 (en) 1993-11-29 1993-11-29 Power semiconductor module

Publications (2)

Publication Number Publication Date
JPH07153907A true JPH07153907A (en) 1995-06-16
JP2720009B2 JP2720009B2 (en) 1998-02-25

Family

ID=18185242

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32621193A Expired - Lifetime JP2720009B2 (en) 1993-11-29 1993-11-29 Power semiconductor module

Country Status (1)

Country Link
JP (1) JP2720009B2 (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0752720A3 (en) * 1995-07-07 1998-06-03 Mitsubishi Denki Kabushiki Kaisha Lead for semiconductor device
JP2001196531A (en) * 2000-01-11 2001-07-19 Sansha Electric Mfg Co Ltd Electric power semiconductor module
JP2008252055A (en) * 2007-03-08 2008-10-16 Fuji Electric Device Technology Co Ltd Semiconductor and method for manufacturing the same
JP2009021286A (en) * 2007-07-10 2009-01-29 Mitsubishi Electric Corp Semiconductor device for electric power
US7541670B2 (en) 2006-06-29 2009-06-02 Mitsubishi Electric Corporation Semiconductor device having terminals
KR101482326B1 (en) * 2012-12-20 2015-01-13 삼성전기주식회사 Power semiconductor module having latchable lead member
JP2017092388A (en) * 2015-11-16 2017-05-25 富士電機株式会社 Semiconductor device and semiconductor device manufacturing method
JP2017208382A (en) * 2016-05-16 2017-11-24 三菱電機株式会社 Semiconductor device
WO2018100600A1 (en) * 2016-11-29 2018-06-07 三菱電機株式会社 Semiconductor device, control device, and method for manufacturing semiconductor device
JP2018107414A (en) * 2016-12-28 2018-07-05 三菱電機株式会社 Semiconductor device and method of manufacturing the same
JP2018117071A (en) * 2017-01-19 2018-07-26 三菱電機株式会社 Semiconductor device and manufacturing method of the same
CN108780792A (en) * 2016-03-30 2018-11-09 三菱电机株式会社 Power module and its manufacturing method and power electronic device and its manufacturing method
JP6472033B1 (en) * 2017-11-09 2019-02-20 株式会社三社電機製作所 Semiconductor module
JP2020141011A (en) * 2019-02-27 2020-09-03 株式会社豊田自動織機 Semiconductor module
JP2021182604A (en) * 2020-05-20 2021-11-25 三菱電機株式会社 Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7244339B2 (en) * 2019-04-19 2023-03-22 株式会社三社電機製作所 External terminals for semiconductor modules

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0752720A3 (en) * 1995-07-07 1998-06-03 Mitsubishi Denki Kabushiki Kaisha Lead for semiconductor device
JP2001196531A (en) * 2000-01-11 2001-07-19 Sansha Electric Mfg Co Ltd Electric power semiconductor module
US7541670B2 (en) 2006-06-29 2009-06-02 Mitsubishi Electric Corporation Semiconductor device having terminals
JP2008252055A (en) * 2007-03-08 2008-10-16 Fuji Electric Device Technology Co Ltd Semiconductor and method for manufacturing the same
JP2009021286A (en) * 2007-07-10 2009-01-29 Mitsubishi Electric Corp Semiconductor device for electric power
KR101482326B1 (en) * 2012-12-20 2015-01-13 삼성전기주식회사 Power semiconductor module having latchable lead member
JP2017092388A (en) * 2015-11-16 2017-05-25 富士電機株式会社 Semiconductor device and semiconductor device manufacturing method
CN108780792A (en) * 2016-03-30 2018-11-09 三菱电机株式会社 Power module and its manufacturing method and power electronic device and its manufacturing method
CN108780792B (en) * 2016-03-30 2021-07-09 三菱电机株式会社 Power module and method for manufacturing the same, and power electronic device and method for manufacturing the same
US10861756B2 (en) 2016-05-16 2020-12-08 Mitsubishi Electric Corporation Semiconductor device including sensor and driving terminals spaced away from the semiconductor device case wall
US10290555B2 (en) 2016-05-16 2019-05-14 Mitsubishi Electric Corporation Semiconductor device including sensor and driving terminals spaced away from the semiconductor device case wall
JP2017208382A (en) * 2016-05-16 2017-11-24 三菱電機株式会社 Semiconductor device
CN109997221B (en) * 2016-11-29 2024-03-12 三菱电机株式会社 Semiconductor device, control device, and method for manufacturing semiconductor device
CN109997221A (en) * 2016-11-29 2019-07-09 三菱电机株式会社 The manufacturing method of semiconductor device, control device and semiconductor device
US11063004B2 (en) 2016-11-29 2021-07-13 Mitsubishi Electric Corporation Semiconductor device, control device, and method for manufacturing semiconductor device
WO2018100600A1 (en) * 2016-11-29 2018-06-07 三菱電機株式会社 Semiconductor device, control device, and method for manufacturing semiconductor device
JPWO2018100600A1 (en) * 2016-11-29 2019-03-07 三菱電機株式会社 Semiconductor device, control device, and method of manufacturing semiconductor device
JP2018107414A (en) * 2016-12-28 2018-07-05 三菱電機株式会社 Semiconductor device and method of manufacturing the same
CN108257940B (en) * 2016-12-28 2021-07-06 三菱电机株式会社 Semiconductor device and method for manufacturing the same
CN108257940A (en) * 2016-12-28 2018-07-06 三菱电机株式会社 Semiconductor device and its manufacturing method
US10366933B2 (en) 2016-12-28 2019-07-30 Mitsubishi Electric Corporation Case having terminal insertion portion for an external connection terminal
JP2018117071A (en) * 2017-01-19 2018-07-26 三菱電機株式会社 Semiconductor device and manufacturing method of the same
DE102017221427B4 (en) 2017-01-19 2022-08-25 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing the same
JP2019087696A (en) * 2017-11-09 2019-06-06 株式会社三社電機製作所 Semiconductor module
JP6472033B1 (en) * 2017-11-09 2019-02-20 株式会社三社電機製作所 Semiconductor module
JP2020141011A (en) * 2019-02-27 2020-09-03 株式会社豊田自動織機 Semiconductor module
JP2021182604A (en) * 2020-05-20 2021-11-25 三菱電機株式会社 Semiconductor device

Also Published As

Publication number Publication date
JP2720009B2 (en) 1998-02-25

Similar Documents

Publication Publication Date Title
JP2956363B2 (en) Power semiconductor device
JPH07153907A (en) Power semiconductor module
US4970576A (en) Power semiconductor module and method for producing the module
JPS62202548A (en) Semiconductor device
JP2720008B2 (en) Power semiconductor module
EP0272390A2 (en) Packages for a semiconductor device
JP4208490B2 (en) Semiconductor power module and manufacturing method thereof
JP3656861B2 (en) Semiconductor integrated circuit device and method for manufacturing semiconductor integrated circuit device
JPH1116937A (en) Terminal structure of power semiconductor module
JPH10242385A (en) Power hybrid integrated-circuit device
JPH0661372A (en) Hybrid ic
US5470796A (en) Electronic package with lead wire connections and method of making same
JPS60157243A (en) Semiconductor device
JP2001024143A (en) Composite semiconductor device
JPH07114254B2 (en) Intelligent power module
JP2515693Y2 (en) Semiconductor module
JP2000323646A (en) Insulating material case and semiconductor device
JP2767517B2 (en) Power semiconductor module
JP2539143Y2 (en) Semiconductor module
JPH10303537A (en) Unit for mounting power circuit
JP2544272Y2 (en) Hybrid integrated circuit
JPH042478Y2 (en)
JP2539144Y2 (en) Semiconductor module
JPH0864761A (en) Hybrid ic and manufacture thereof
JP2513416B2 (en) Semiconductor device