JPH07142388A - Crystal growth device - Google Patents
Crystal growth deviceInfo
- Publication number
- JPH07142388A JPH07142388A JP28796093A JP28796093A JPH07142388A JP H07142388 A JPH07142388 A JP H07142388A JP 28796093 A JP28796093 A JP 28796093A JP 28796093 A JP28796093 A JP 28796093A JP H07142388 A JPH07142388 A JP H07142388A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- gas
- crystal growth
- flow rate
- control device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、液体または固体の原料
の蒸気をガス原料に変えて結晶成長室に供給する結晶成
長装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystal growth apparatus for converting a vapor of a liquid or solid raw material into a gas raw material and supplying it to a crystal growth chamber.
【０００２】[0002]
【従来の技術】従来の有機金属気相結晶成長装置は、例
えばIII−Ｖ族半導体混晶（コロナ社，東京，１９８８
年）の第１３８頁に記載されているように、流量制御装
置を通した高純度の輸送ガスを原料容器内に導入して液
体または固体の有機金属の蒸気を輸送ガスに混合してこ
れを原料ガス（液体または固体の原料の蒸気と輸送ガス
の混合したものを以下原料ガスと呼ぶ）として使用して
いる。2. Description of the Related Art A conventional metal-organic vapor phase crystal growth apparatus is, for example, a III-V group semiconductor mixed crystal (Corona Corp., Tokyo, 1988).
, Pp. 138), a high-purity transport gas that has passed through a flow control device is introduced into the raw material container, and liquid or solid organometallic vapor is mixed with the transport gas. A raw material gas (a mixture of liquid or solid raw material vapor and a transport gas is hereinafter referred to as a raw material gas) is used.
【０００３】このような有機金属気相結晶成長装置にお
いて微量な原料ガスを供給する場合、輸送ガスの流量を
微量にしなければならないので流速、すなわち、原料ガ
スが配管内を進む速さが非常に遅くなる。原料ガスは特
に原料容器を出てから流速の速い結晶成長室へ接続する
管（ラン管）と排ガス処理装置へ接続する管（ベント
管）との切替装置（ベント／ラン切替装置）に達するま
でに時間がかかる。原料ガス供給の遅れは、成長する結
晶の組成制御性を低下させるので問題となる。When a small amount of raw material gas is supplied in such a metal-organic vapor phase crystal growth apparatus, the flow rate of the transport gas must be very small, so that the flow velocity, that is, the speed at which the raw material gas travels in the pipe is very high. Become slow. The raw material gas reaches the switching device (vent / run switching device) between the pipe (run pipe) connected to the crystal growth chamber with a high flow velocity and the pipe (vent pipe) connected to the exhaust gas treatment device after leaving the raw material container. Takes time. The delay in the supply of the source gas is a problem because it lowers the composition controllability of the growing crystal.
【０００４】従来技術では、この問題に対して原料容器
出口付近に希釈ガスを導入して原料ガスに混合してベン
ト／ラン切替装置に到るまでの配管での流速を上げるこ
とにより対処していた。In the prior art, this problem is dealt with by introducing a diluent gas near the outlet of the raw material container, mixing it with the raw material gas, and increasing the flow velocity in the pipe to reach the vent / run switching device. It was
【０００５】[0005]
【発明が解決しようとする課題】上記希釈ガスを導入す
る方法では原料容器出口と希釈ガス混合部との間には原
料容器の継ぎ手や原料容器をバイパスする配管との接続
部等が存在するので構造的に数十cmの距離がどうしても
できる。原料ガスの流量が数sccm程度の極微量の場合に
は上記原料容器出口から希釈ガス混合部までの短い配管
でも原料ガス供給の遅れが生じ、結晶界面急峻性が悪く
なるという問題があった。In the above method of introducing the diluent gas, since there is a joint between the material container outlet and the diluent gas mixing section and a connection portion with a pipe bypassing the material container, etc. A distance of several tens of centimeters is structurally possible. When the flow rate of the raw material gas is a very small amount of about several sccm, there is a problem that the raw material gas supply is delayed even in the short pipe from the raw material container outlet to the dilution gas mixing section, and the steepness of the crystal interface is deteriorated.
【０００６】本発明の目的は、極微量な原料ガスを供給
する際に遅れを生じない気相結晶成長装置を提供するこ
とにある。An object of the present invention is to provide a vapor phase crystal growth apparatus which does not cause a delay when supplying an extremely small amount of raw material gas.
【０００７】[0007]
【課題を解決するための手段】上記目的は、原料容器内
の圧力を一定に保つ手段を設け、かつ結晶成長室へ供給
する原料ガスの流量を制御する装置をベント／ラン切替
装置に直近に接続することにより達成できる。その距離
は１０cm以下であれば効果が有り、直接に接続するとな
お効果が大きい。The above object is to provide a device for maintaining a constant pressure in a raw material container and a device for controlling the flow rate of a raw material gas supplied to a crystal growth chamber in the vicinity of a vent / run switching device. It can be achieved by connecting. If the distance is 10 cm or less, it is effective, and if it is directly connected, the effect is still large.
【０００８】[0008]
【作用】原料容器内の圧力を一定に保つ手段を設けてい
るので、原料ガスの濃度、すなわち、容器内圧力に対す
る原料の蒸気圧の比は一定に保たれる。濃度が一定に保
たれた原料ガスは、絶えず結晶成長室へ供給する流量を
制御する装置入口まで供給される。この流量制御装置
は、原料ガスの流出先を高速に流れるベント管とラン管
とのうちどちらか一方にきり替えるベント／ラン切替装
置に直近に接続されるので、流速の遅い部分は短くな
る。その距離は１０cm以下であれば結晶界面の急峻性改
善に効果が有り、直接に接続すると流速の遅い部分は存
在しなくなるのでなお効果が大きい。従って、極微量な
原料ガスを遅れを生じることなく安定に供給できる。切
替装置を集積し、全ての異なる種類の原料ガスを同時に
制御することにより、結晶界面における組成の揺らぎが
さらに小さくなる。また、従来用いていた希釈ガスの配
管部が不要となるので従来法よりも部品数を減らすこと
ができ、安価で小型で信頼性の高い結晶成長装置を提供
できる。Since the means for keeping the pressure inside the raw material container constant is provided, the concentration of the raw material gas, that is, the ratio of the vapor pressure of the raw material to the pressure inside the container is kept constant. The source gas whose concentration is kept constant is continuously supplied up to the apparatus inlet which controls the flow rate of the gas supplied to the crystal growth chamber. Since this flow rate control device is connected immediately to the vent / run switching device that switches the outflow destination of the raw material gas to either the vent pipe or the run pipe that flows at high speed, the portion where the flow velocity is slow becomes short. If the distance is 10 cm or less, it is effective in improving the steepness of the crystal interface, and if it is directly connected, there is no portion where the flow velocity is slow, so the effect is still large. Therefore, an extremely small amount of source gas can be stably supplied without delay. By integrating the switching device and controlling all the different kinds of source gases at the same time, the composition fluctuation at the crystal interface is further reduced. Further, since the dilution gas piping used conventionally is not required, the number of parts can be reduced as compared with the conventional method, and an inexpensive, small-sized and highly reliable crystal growth apparatus can be provided.
【０００９】[0009]
【実施例】（実施例１）図１は本発明を適用したＡｌＧ
ａＡｓ／ＧａＡｓ系半導体結晶成長用の有機金属気相成
長装置の構成を示す系統図である。本装置は、有機金属
供給系１０，ボンベガス供給系２０，純化輸送ガス供給
器３０，反応室４０，ＲＦコイル４１，フィルタ５０，
真空ポンプ６０，排ガス処理装置７０より成っており、
反応室４０中にはサセプタ４２を有し、反応室を通るラ
ン管６及び１６と反応室４０を通らないベント管７及び
１７を有する。有機金属供給系１０の原料はそれぞれ純
化輸送ガス供給器３０より導入された輸送ガスと混合し
て、ボンベガス供給系２０より導入された原料ととも
に、ベント／ラン切替装置５及び１５により、結晶成長
に必要なものだけがラン管６及び１６を通して反応室４
０に送られ、残りはベント管７及び１７を通してフイル
タ５０，真空ポンプ６０を経て排ガス処理装置７０へ送
られる。有機金属供給系１０の流量制御装置４とベント
／ラン切替装置５とは配管を介せずに直接接続されてい
る。有機金属供給系１０はトリメチルガリウム（ＴＭ
Ｇ），トリメチルアルミニウム（ＴＭＡ）及びジメチル
亜鉛（ＤＭＺ）の三つのバブラを有している。ボンベガ
ス供給系２０はアルシン，セレン化水素及びジメチル亜
鉛の三種類のガスを有している。本装置の有機金属供給
系１０以外の部分は通常の有機金属気相成長装置のもの
と同等であるので詳細な説明は省略する。EXAMPLES Example 1 FIG. 1 shows AlG to which the present invention is applied.
It is a system diagram which shows the structure of the metal organic chemical vapor deposition apparatus for aAs / GaAs type | system | group semiconductor crystal growth. This apparatus includes an organic metal supply system 10, a cylinder gas supply system 20, a purified transport gas supply device 30, a reaction chamber 40, an RF coil 41, a filter 50,
It consists of a vacuum pump 60 and an exhaust gas treatment device 70,
The reaction chamber 40 has a susceptor 42, run pipes 6 and 16 passing through the reaction chamber, and vent pipes 7 and 17 not passing through the reaction chamber 40. The raw materials of the organometallic supply system 10 are mixed with the transport gas introduced from the purified transport gas supply device 30, respectively, and together with the raw material introduced from the cylinder gas supply system 20, the vent / run switching devices 5 and 15 are used for crystal growth. Only what is needed is passed through the run tubes 6 and 16 into the reaction chamber 4
0, and the rest is sent to the exhaust gas processing device 70 through the vent pipes 7 and 17 through the filter 50 and the vacuum pump 60. The flow rate control device 4 of the organometallic supply system 10 and the vent / run switching device 5 are directly connected without a pipe. The organic metal supply system 10 is trimethylgallium (TM
G), trimethylaluminum (TMA) and dimethylzinc (DMZ). The cylinder gas supply system 20 has three kinds of gas, arsine, hydrogen selenide, and dimethylzinc. The parts other than the metal-organic supply system 10 of this apparatus are the same as those of a normal metal-organic vapor phase epitaxy apparatus, and detailed description thereof will be omitted.
【００１０】図２は図１のうち有機金属供給系１０内の
有機金属原料容器周辺の構成を詳細に示す図である。恒
温槽１１中で一定温度に保たれた有機金属原料容器１内
で液体または固体原料である有機金属に高純度の輸送ガ
スを配管２より導入することにより輸送ガスと混合して
原料ガスとし、原料ガスを供給する管３にはガス流量制
御装置４を設け、原料ガスを所望の流量に調節する。ガ
ス流量制御装置４はベント／ラン切替装置５と配管を介
せずに直接接続する。従って、流量制御装置とベント／
ラン切替装置との距離はそれぞれの装置に含まれる長さ
分だけとなりその距離は１０cm以下になるので、極微量
な原料ガスがラン管に供給されるまでの流速の遅い部分
は短くなる。圧力制御装置８により圧力計９の値が一定
となるように制御することによって、供給されるガス中
の有機金属の濃度が一定になるようにしている。FIG. 2 is a diagram showing in detail the structure around the organic metal raw material container in the organic metal supply system 10 in FIG. A high-purity transport gas is introduced into the organometallic liquid or solid raw material from the pipe 2 in the organometallic raw material container 1 kept at a constant temperature in the constant temperature bath 11 to mix with the transport gas to obtain the raw material gas, A gas flow rate control device 4 is provided in the pipe 3 for supplying the raw material gas to adjust the raw material gas to a desired flow rate. The gas flow rate control device 4 is directly connected to the vent / run switching device 5 without a pipe. Therefore, the flow controller and vent /
The distance to the run switching device is only the length included in each device, and the distance is 10 cm or less. Therefore, the portion where the flow velocity is slow until a very small amount of raw material gas is supplied to the run pipe becomes short. The pressure controller 8 controls the value of the pressure gauge 9 to be constant, so that the concentration of the organic metal in the supplied gas is constant.
【００１１】不純物ドーピングに用いるジメチル亜鉛は
結晶成長に必要な流量が１sccm程度と微量なので、その
配管にこの装置を用いれば、極微量な原料ガスを遅れを
生じることなく安定に供給できるという効果がある。切
替装置を集積し、全ての異なる種類の原料ガスを同時に
制御することにより、結晶界面における組成の揺らぎが
さらに小さくなる。Since dimethyl zinc used for impurity doping has a very small flow rate of about 1 sccm for crystal growth, the use of this device in the pipe has the effect that a very small amount of raw material gas can be stably supplied without delay. is there. By integrating the switching device and controlling all the different kinds of source gases at the same time, the composition fluctuation at the crystal interface is further reduced.
【００１２】（実施例２）本実施例の有機金属気相成長
装置の構成は基本的に実施例１と同じであるが、有機金
属原料容器周辺の構成が異なる。その部分の構成を図３
に示す。ＴＭＡ及びＴＭＧを供給する管３の構造を途中
で二本に分岐した構造とし、分岐管の一つ１３にはガス
流量制御装置４を設け、ガスを所望の流量に調節する。
ガス流量制御装置４はベント／ラン切替装置５と配管を
介せずに直接接続する。分岐管の他の一つ２３にもガス
流量制御装置２４を設け、ガスを所望の流量に調節す
る。ガス流量制御装置２４はベント／ラン切替装置２５
と直接接続する。圧力制御装置８により圧力計９の値が
一定となるように制御することによって、供給されるガ
ス中の有機金属の濃度が一定になるようにしている。(Embodiment 2) The structure of the metal-organic vapor phase epitaxy apparatus of this embodiment is basically the same as that of Embodiment 1, but the structure around the metal-organic raw material container is different. The structure of that part is shown in FIG.
Shown in. The structure of the pipe 3 for supplying TMA and TMG is divided into two in the middle, and one of the branch pipes 13 is provided with a gas flow rate control device 4 to adjust the gas to a desired flow rate.
The gas flow rate control device 4 is directly connected to the vent / run switching device 5 without a pipe. The other one of the branch pipes 23 is also provided with a gas flow controller 24 to adjust the gas to a desired flow rate. The gas flow rate control device 24 is a vent / run switching device 25.
Connect directly with. The pressure controller 8 controls the value of the pressure gauge 9 to be constant, so that the concentration of the organic metal in the supplied gas is constant.
【００１３】本実施例によれば分岐管のそれぞれに異な
る流量の原料を導入することにより、混晶組成の異なる
層を流量安定化時間を設けずに続けて成長することがで
きるという効果がある。切替装置を集積し、全ての異な
る種類の原料ガスを同時に制御することにより、結晶界
面における組成の揺らぎがさらに小さくなる。なお、分
岐の数を多くすることにより異なる混晶組成の多層構造
をさらに正確に作製できるようになる。According to the present embodiment, by introducing raw materials at different flow rates into the branch pipes, it is possible to continuously grow layers having different mixed crystal compositions without providing a time period for stabilizing the flow rate. . By integrating the switching device and controlling all the different kinds of source gases at the same time, the composition fluctuation at the crystal interface is further reduced. By increasing the number of branches, it becomes possible to more accurately manufacture a multilayer structure having different mixed crystal compositions.
【００１４】（実施例３）図４は本発明を適用したｐ−
ＧａＡｓ結晶成長を行う化学線エピタキシ装置を示す図
である。本装置は、ガス原料供給系１０，固体原料供給
系，反応室４０，真空ポンプ６０，６１，排ガス処理装
置７０より成っており、ガス原料供給系１０は反応室４
０を通るラン管６と反応室４０を通らないベント管７を
有する。固体原料供給系は分子線セル４５の中に固体ソ
ース４９として金属ガリウム及び金属砒素を有してい
る。その他に、反応室４０中にはサセプタ４２，真空計
４３，質量分析器４４，熱分解セル４６，分子線を遮る
シャッタ４７，液体窒素シュラウド４８を有する。(Embodiment 3) FIG. 4 shows the p-type to which the present invention is applied.
It is a figure which shows the actinic-beam epitaxy apparatus which performs GaAs crystal growth. This apparatus comprises a gas raw material supply system 10, a solid raw material supply system, a reaction chamber 40, vacuum pumps 60, 61, and an exhaust gas treatment device 70. The gas raw material supply system 10 is a reaction chamber 4
It has a run pipe 6 passing through 0 and a vent pipe 7 not passing through the reaction chamber 40. The solid raw material supply system has metallic gallium and metallic arsenic as the solid source 49 in the molecular beam cell 45. In addition, the reaction chamber 40 has a susceptor 42, a vacuum gauge 43, a mass analyzer 44, a pyrolysis cell 46, a shutter 47 for blocking molecular beams, and a liquid nitrogen shroud 48.
【００１５】ガス原料供給系１０はｐ型不純物ドーピン
グに用いる液体のネオペンタン（Ｃ(ＣＨ3)4）を有して
いる。原料容器からネオペンタン蒸気を供給する管には
ガス流量制御装置４を設け、ガスを所望の流量に調節す
る。ガス流量制御装置４はベント／ラン切替装置５と配
管を介せずに直接接続する。従って、流量制御装置とベ
ント／ラン切替装置との距離はそれぞれの装置に含まれ
る長さ分だけとなりその距離は１０cm以下になる。ネオ
ペンタンは結晶成長に必要な流量が１sccm程度と極微量
なので、本発明により遅れを生じることなく安定に供給
できる。The gas source supply system 10 has liquid neopentane (C (CH 3 ) 4 ) used for p-type impurity doping. A gas flow rate control device 4 is provided in a pipe for supplying neopentane vapor from the raw material container to adjust the gas to a desired flow rate. The gas flow rate control device 4 is directly connected to the vent / run switching device 5 without a pipe. Therefore, the distance between the flow control device and the vent / run switching device is only the length included in each device, and the distance is 10 cm or less. Since neopentane requires a very small flow rate of about 1 sccm for crystal growth, it can be stably supplied according to the present invention without delay.
【００１６】[0016]
【発明の効果】本発明によれば、極微量の原料ガスを遅
れを生じることなく安定に供給できるので、結晶界面に
おける組成の揺らぎが小さくなる。また、混晶組成の異
なる層の間に流量安定化時間を設けずに続けて成長する
ことができる。また、従来用いていた希釈ガスの配管が
不要となるので従来法よりも部品数を減らすことができ
る。According to the present invention, a very small amount of raw material gas can be stably supplied without causing a delay, so that fluctuation in composition at the crystal interface becomes small. Further, it is possible to grow continuously without providing a flow rate stabilizing time between layers having different mixed crystal compositions. Further, since the diluent gas pipe used conventionally is unnecessary, the number of parts can be reduced as compared with the conventional method.
【図１】実施例１における結晶成長装置の系統図。FIG. 1 is a system diagram of a crystal growth apparatus in Example 1.
【図２】実施例１における有機金属供給系統の系統図。FIG. 2 is a system diagram of an organometallic supply system in Example 1.
【図３】実施例２における有機金属供給系統の系統図。FIG. 3 is a system diagram of an organometallic supply system in Example 2.
【図４】実施例３における結晶成長装置の系統図。FIG. 4 is a system diagram of a crystal growth apparatus in Example 3.
１…有機金属等原料容器、２…純化輸送ガス供給管、３
…有機金属供給管、４…流量制御装置、５…ベント／ラ
ン切替装置、６…ラン管、７…ベント管、８…圧力制御
装置、９…圧力計、１１…恒温槽。1 ... Container for raw material such as organic metal, 2 ... Purified transport gas supply pipe, 3
... organic metal supply pipe, 4 ... flow rate control device, 5 ... vent / run switching device, 6 ... run pipe, 7 ... vent pipe, 8 ... pressure control device, 9 ... pressure gauge, 11 ... thermostat.
Claims (7)
料に変え、前記ガス原料を反応室に供給して結晶成長を
行う結晶成長装置において、少なくとも一つの前記原料
容器において前記ガス原料を供給するための管にはガス
流量制御装置が設けられており、前記管は切替装置によ
り前記反応室または排ガス処理装置に接続しており、前
記ガス流量制御装置が前記切替装置と前記原料容器との
間に有り、前記ガス流量制御装置が前記切替装置に１０
cm以内で接続する構造となっていることを特徴とする結
晶成長装置。1. A crystal growth apparatus in which a liquid or solid raw material is changed into a gas raw material in a raw material container and the gas raw material is supplied to a reaction chamber for crystal growth, and the gas raw material is supplied in at least one of the raw material containers. A gas flow rate control device is provided in the pipe for doing, the pipe is connected to the reaction chamber or the exhaust gas treatment device by a switching device, the gas flow rate control device of the switching device and the raw material container In between, the gas flow rate control device is connected to the switching device.
A crystal growth device characterized by having a structure of connecting within cm.
が前記切替装置に直接に接続する構造となっている結晶
成長装置。2. The crystal growth apparatus according to claim 1, wherein the gas flow rate control device is directly connected to the switching device.
料に変え、前記ガス原料を反応室に供給して結晶成長を
行う結晶成長装置において、少なくとも一つの原料容器
において前記ガス原料を供給するための管の構造は途中
で複数の分岐管に分岐し、前記分岐管の少なくとも一つ
にはガス流量制御装置が設けられ、前記分岐管は切替装
置により前記反応室または排ガス処理装置に接続してお
り、前記ガス流量制御装置が前記切替装置と前記原料容
器との間に有り、前記ガス流量制御装置が前記切替装置
に１０cm以内で接続する構造となっていることを特徴と
する結晶成長装置。3. A crystal growth apparatus in which a liquid or solid raw material is changed into a gas raw material in a raw material container and the gas raw material is supplied to a reaction chamber for crystal growth, and the gas raw material is supplied in at least one raw material container. The structure of the pipe for branch into a plurality of branch pipes on the way, at least one of the branch pipes is provided with a gas flow control device, the branch pipe is connected to the reaction chamber or the exhaust gas treatment device by a switching device. The crystal growth apparatus is characterized in that the gas flow rate control device is between the switching device and the raw material container, and the gas flow rate control device is connected to the switching device within 10 cm. .
が前記切替装置に直接に接続する構造となっている結晶
成長装置。4. The crystal growth apparatus according to claim 3, wherein the gas flow rate control device is directly connected to the switching device.
原料容器内の圧力を一定に保つ手段を設けた結晶成長装
置。5. A crystal growth apparatus according to claim 1, 2, 3 or 4, which is provided with means for keeping the pressure in the raw material container constant.
前記結晶成長装置が有機金属気相結晶成長装置である結
晶成長装置。6. The method according to claim 1, 2, 3, 4 or 5.
A crystal growth apparatus in which the crystal growth apparatus is an organometallic vapor phase crystal growth apparatus.
前記結晶成長装置が化学線エピタキシ装置である結晶成
長装置。7. The method according to claim 1, 2, 3, 4 or 5,
A crystal growth apparatus in which the crystal growth apparatus is an actinic radiation epitaxy apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28796093A JPH07142388A (en) | 1993-11-17 | 1993-11-17 | Crystal growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28796093A JPH07142388A (en) | 1993-11-17 | 1993-11-17 | Crystal growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07142388A true JPH07142388A (en) | 1995-06-02 |
Family
ID=17723979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28796093A Pending JPH07142388A (en) | 1993-11-17 | 1993-11-17 | Crystal growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07142388A (en) |
-
1993
- 1993-11-17 JP JP28796093A patent/JPH07142388A/en active Pending
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