JPH07134069A - Method for monitoring temperature of substrate - Google Patents
Method for monitoring temperature of substrateInfo
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- JPH07134069A JPH07134069A JP5281249A JP28124993A JPH07134069A JP H07134069 A JPH07134069 A JP H07134069A JP 5281249 A JP5281249 A JP 5281249A JP 28124993 A JP28124993 A JP 28124993A JP H07134069 A JPH07134069 A JP H07134069A
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光加熱された基板（ウ
エハ）からの発光を検知する基板温度（ウエハ温度）の
モニタ方法に係り、特に、半導体製造プロセスに用いて
好適な基板温度のモニタ方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate temperature (wafer temperature) monitoring method for detecting light emission from a substrate (wafer) heated by light, and more particularly, to a substrate temperature suitable for a semiconductor manufacturing process. Regarding the monitoring method.
【０００２】[0002]
【従来の技術】半導体製造プロセスでは、ＬＳＩの高集
積化に対応して品質を管理する上で、製品の精密な温度
管理が非常に重要である。例えば、成膜プロセスにおけ
るウエハ温度は、成膜速度および膜の特性を支配する重
要な因子であり、プロセス再現性に大きく関与する。ま
た、不純物をイオン注入した後のアニール処理において
も、不純物を浅く拡散させ、浅い接合を形成するために
は、ウエハの高精度な温度制御が必要である。2. Description of the Related Art In a semiconductor manufacturing process, precise temperature control of products is very important for quality control in response to high integration of LSI. For example, the wafer temperature in the film forming process is an important factor that controls the film forming rate and the film characteristics, and has a great influence on the process reproducibility. Further, even in the annealing process after ion implantation of impurities, highly precise temperature control of the wafer is necessary in order to diffuse the impurities shallowly and form a shallow junction.
【０００３】現在、半導体製造プロセスにおけるウエハ
の温度測定には、熱電対や放射温度計が使用されてい
る。しかし熱電対は、被測定物に接触させる必要があ
り、ウエハ汚染を引き起こす可能性があってウエハの直
接計測には適さない。そこで、熱電対を用いる場合に
は、ウエハを載せるステージ等の温度を計測して管理温
度としているが、ウエハ温度を直接計測している訳では
無いので、低圧プロセス時、あるいは、ステージ上に異
物等のウエハとステージの密着性を低下させるものがあ
って、ステージとウエハの熱伝達の悪い状況では、正確
な温度計測は困難である。At present, thermocouples and radiation thermometers are used for measuring the temperature of wafers in the semiconductor manufacturing process. However, the thermocouple needs to be brought into contact with the object to be measured and may cause wafer contamination, which is not suitable for direct measurement of the wafer. Therefore, when a thermocouple is used, the temperature of the stage on which the wafer is placed is measured and used as the control temperature.However, since the wafer temperature is not directly measured, it is not possible to directly measure the wafer temperature. For example, it is difficult to accurately measure the temperature in a situation where the heat transfer between the stage and the wafer is poor because the adhesion between the wafer and the stage is deteriorated.
【０００４】一方、放射温度計は非接触に直接ウエハ温
度を計測できるという点で、優れた計測手段である。こ
の放射温度計を用いる計測手法では、ウエハ表面から放
射される赤外線の強度から、既知の表面の放射のし易さ
（放射率）を加味してウエハの温度を算出する。しかし
Ｓｉウエハの放射率は、図２に示すように波長と温度に
よって大きく変化する。すなわち同図から判るように、
Ｓｉの吸収域である１．２μｍ以下の光の放射率は、温
度に依存しないが、１．２μｍ以上でＳｉウエハの透過
波長域の放射率は、温度に大きく依存する。従って、
１．２μｍ以上の光を検知するような検知素子を用いた
場合、放射率が温度によって変化するために、正確な温
度計測が困難である。また、ウエハ裏面からの放射光を
ウエハ透過域にあたる検知波長域で測定した場合には、
ウエハ表面のパターンや膜質の違いによって検知光量が
異なり、温度表示が異なってしまうという問題点があっ
た。On the other hand, the radiation thermometer is an excellent measuring means in that it can directly measure the wafer temperature without contact. In the measurement method using this radiation thermometer, the temperature of the wafer is calculated from the intensity of infrared rays radiated from the surface of the wafer in consideration of the easiness of radiation (emissivity) of the known surface. However, the emissivity of the Si wafer greatly changes depending on the wavelength and the temperature as shown in FIG. That is, as can be seen from the figure,
The emissivity of light below 1.2 μm, which is the Si absorption region, does not depend on temperature, but the emissivity in the transmission wavelength region of the Si wafer above 1.2 μm largely depends on temperature. Therefore,
When a detection element that detects light of 1.2 μm or more is used, it is difficult to measure temperature accurately because the emissivity changes with temperature. Also, when the emitted light from the back surface of the wafer is measured in the detection wavelength range corresponding to the wafer transmission area,
There is a problem in that the amount of detected light varies depending on the pattern of the wafer surface and the film quality, and the temperature display also varies.
【０００５】上記問題点を解決するためには、ウエハ吸
収域の光（波長１．２μｍ以下の光）を検知する素子が
有用である。公知のＳｉフォトダイオード放射温度計
は、検知波長域が０．５〜１．２μｍであり測定波長と
しては適切であるが、短波長であるために、通常ＣＶＤ
（Chemical vapor deposition ）等で用いられるプロセ
ス温度３００℃〜５００℃ではその放射光量が極めて少
なく、低温の計測が困難であった。In order to solve the above problems, an element that detects light in the wafer absorption region (light having a wavelength of 1.2 μm or less) is useful. A known Si photodiode radiation thermometer has a detection wavelength range of 0.5 to 1.2 μm and is suitable as a measurement wavelength, but it is usually a CVD wavelength because it has a short wavelength.
At a process temperature of 300 ° C. to 500 ° C. used in (Chemical vapor deposition) or the like, the amount of emitted light is extremely small, and it is difficult to measure the low temperature.
【０００６】なお、この種の放射温度計を用いたウエハ
温度のモニタ手法の従来技術としては、特開平４−１３
０７４６号公報に開示された技術が挙げられ、この先願
においては、ウエハ近傍に放射光を効率良く受光し検出
素子へと伝達する導光体を設置することで、測定下限の
低下を図るようにしている。As a conventional technique of the wafer temperature monitoring method using this type of radiation thermometer, Japanese Patent Laid-Open No. 4-13 is available.
There is a technique disclosed in Japanese Patent No. 0746, and in this prior application, a light guide body that efficiently receives radiated light and transmits it to a detection element is installed in the vicinity of the wafer so that the lower limit of measurement can be reduced. ing.
【０００７】[0007]
【発明が解決しようとする課題】しかし、半導体製造プ
ロセスでウエハ裏面をランプ加熱する場合、ランプ光の
波長領域が迷光となるが、上記した先願による従来技術
では、ウエハを透過しない波長の光を用いて低温度測定
を行う際の、検知する迷光量に起因するノイズ量の低減
については配慮がなされておらず、測定時のＳ／Ｎ比が
小さいという問題があった。However, when the back surface of the wafer is lamp-heated in the semiconductor manufacturing process, the wavelength region of the lamp light becomes stray light. However, in the prior art according to the above-mentioned prior application, light having a wavelength that does not pass through the wafer is used. No consideration was given to the reduction of the amount of noise caused by the amount of stray light to be detected when low temperature measurement is performed using, and there was a problem that the S / N ratio during measurement was small.
【０００８】ここで、温度Ｔにおける黒体の放射エネル
ギ密度ρ（λ）は、次の式で表わされるPlanckの輻射
式に従い、例えば図３に示す如きものになる。Here, the radiant energy density ρ (λ) of the black body at the temperature T becomes, for example, as shown in FIG. 3 according to the Planck's radiation equation represented by the following equation.
【０００９】 ρ(λ)＝８π・ｈ・ｃ／[λ5{ｅｘｐ(ｃ・ｈ／ｋ・λ・Ｔ)}−１] ……式 なお式において、λは放射光波長、ｃは光の速度、ｈ
はPlanck定数、ｋはBoltzmann 定数である。図３から明
らかなように、放射面の温度が高いほど発光波長分布の
ピークは短波長側へシフトし、その放射エネルギ密度は
大きくなる。例えば、プロセス温度３５０℃では、発光
波長のピークは４．６７μｍでありその強度は１．５９
ｅｒｇ／ｃｍ4 であるが、測定波長０．８６μｍでの発
光量は約２×１０~6ｅｒｇ／ｃｍ4 と極めて微弱であ
る。これに対し、加熱ランプのフィラメント温度にあた
る３４００Ｋでのピーク波長は０．８６μｍ、その強度
は７８００ｅｒｇ／ｃｍ4 である。従って、ウエハを透
過しない放射光（０．８６μｍ）をモニタしようとする
とき、測定する放射エネルギ強度はシグナルとノイズと
で１０9 倍の差が生じる。なお、ランプ光を直接測定す
る訳でないので、実際に１０9 倍の差が生じるわけでは
ないが、測定に際してはノイズ対策が必要となる。Ρ (λ) = 8πhc / [λ 5 {exp (ch / kλT)}-1] ... where λ is the wavelength of the emitted light and c is the light Speed of h
Is the Planck constant and k is the Boltzmann constant. As is clear from FIG. 3, the peak of the emission wavelength distribution shifts to the short wavelength side as the temperature of the emission surface increases, and the emission energy density increases. For example, at a process temperature of 350 ° C., the emission wavelength peak is 4.67 μm and its intensity is 1.59.
erg / cm 4 , but the amount of light emission at a measurement wavelength of 0.86 μm is about 2 × 10 6 erg / cm 4 , which is extremely weak. On the other hand, the peak wavelength at 3400 K, which corresponds to the filament temperature of the heating lamp, is 0.86 μm, and its intensity is 7800 erg / cm 4 . Therefore, when the radiant light (0.86 μm) that does not pass through the wafer is to be monitored, the measured radiant energy intensity is 10 9 times different between the signal and noise. Since the lamp light is not directly measured, a difference of 10 9 times does not actually occur, but a noise countermeasure is required for the measurement.
【００１０】本発明は上記の点に鑑みなされたもので、
その目的とするところは、基板（ウエハ）からの微小な
放射光をノイズの影響なしに検知し、正確な低温度測定
を可能とすることにある。The present invention has been made in view of the above points,
The purpose thereof is to detect minute radiation light from a substrate (wafer) without the influence of noise and enable accurate low temperature measurement.
【００１１】[0011]
【課題を解決するための手段】上記目的は、基板（ウエ
ハ）に照射するランプ光から、温度を計測するために検
知する放射光の波長域を除くことによって達成される。The above object is achieved by excluding the wavelength range of the radiated light detected for measuring the temperature from the lamp light with which the substrate (wafer) is irradiated.
【００１２】またこのことは、予め検知する光を含まな
い光源を用いることのみならず、光源とウエハの間に、
検知する光を取り除くフィルタ（例えばフィルタ機能を
もつ光透過窓）を導入することによっても達成される。Further, this means that not only a light source which does not include the light to be detected in advance is used, but also between the light source and the wafer,
It is also achieved by introducing a filter (for example, a light transmitting window having a filtering function) that removes light to be detected.
【００１３】[0013]
【作用】図１に、基板（ウエハ）の温度を測定する系の
概略を示した。基板２はランプ光により加熱されてお
り、基板２からの放射光は基板２の裏面に近接して配設
された石英ロッドの導光体６によりチャンバ外に伝達さ
れ、ファイバ１２を介してフィルタ１４に入射する。こ
こで検知されるべき波長の光のみが選択され、センサ１
５がこれを検知しその光エネルギが温度に変換される。FIG. 1 shows the outline of the system for measuring the temperature of the substrate (wafer). The substrate 2 is heated by the lamp light, and the radiated light from the substrate 2 is transmitted to the outside of the chamber by the light guide 6 made of a quartz rod arranged near the back surface of the substrate 2, and is filtered via the fiber 12. It is incident on 14. Only the light of the wavelength to be detected here is selected, and the sensor 1
5 detects this, and the light energy is converted into temperature.
【００１４】図４に、４００℃と３５０℃の黒体の放射
エネルギ密度Ｉｒ（λ）の波長依存性を示す。放射温度
計でこの黒体の温度を計測しようとする時、なるべく広
範囲の波長にわたる放射光を検知素子（センサ）で受光
することが、より低温度領域までの測定を可能とする。
図５に、Ｓｉセンサ（Ｓｉフォトダイオード）１５の検
出特性Ｋ（λ）と、フィルタ１４の透過特性Ｔｆ（λ）
と、これらの積で表される上記Ｓｉセンサおよびフィル
タを用いた放射温度計の受光特性Ｋ（λ）×Ｔｆ（λ）
とを示す。図５の（ｂ）に示すフィルタ透過特性Ａ（フ
ィルタＡ）は、図４に示した放射エネルギ密度をなるべ
く広範囲にわたって透過可能なように、放射エネルギ密
度の増え始める８００ｎｍからＳｉウエハの吸収端波長
までを透過させる。これに対し、図５の（ｂ）に示すフ
ィルタ透過特性Ｂ（フィルタＢ）は、９００ｎｍから１
０００ｎｍまでの波長範囲が透過可能である。FIG. 4 shows the wavelength dependence of the radiant energy density Ir (λ) of a black body at 400 ° C. and 350 ° C. When the temperature of the black body is measured by the radiation thermometer, the radiation light having a wavelength as wide as possible is received by the detection element (sensor), which enables the measurement to a lower temperature region.
FIG. 5 shows the detection characteristic K (λ) of the Si sensor (Si photodiode) 15 and the transmission characteristic Tf (λ) of the filter 14.
And the light receiving characteristic K (λ) × Tf (λ) of the radiation thermometer using the above Si sensor and filter expressed by the product of these
And indicates. The filter transmission characteristic A (filter A) shown in FIG. 5B is such that the radiant energy density starts to increase from 800 nm to the absorption edge wavelength of the Si wafer so that the radiant energy density shown in FIG. Through. On the other hand, the filter transmission characteristic B (filter B) shown in FIG.
Wavelength range up to 000 nm can be transmitted.
【００１５】図５の（ｃ）に示したような受光特性
Ａ’，Ｂ’をそれぞれ持つＳｉ放射温度計を用いて、４
００℃と３５０℃の黒体の放射エネルギを検知した場合
のＳｉ放射温度計のＳｉセンサが検知する検知エネルギ
密度を図６に示す。検知エネルギ密度Ｉｓ（λ）は、放
射エネルギ密度Ｉｒ（λ）とＳｉ放射温度計の受光特性
Ｋ（λ）×Ｔｆ（λ）との積で表される。そして、温度
に換算される検知エネルギ強度Ｉｓは、検知エネルギ密
度Ｉｓ（λ）を波長で積分したものとなる。すなわち、 検知エネルギ強度Ｉｓ＝∫{Ｉｓ(λ)}ｄλ ＝∫{Ｉｒ(λ)・Ｋ(λ)・Ｔｆ(λ)}ｄλ ……式 で表わされる。Using a Si radiation thermometer having light receiving characteristics A'and B'as shown in FIG.
FIG. 6 shows the detected energy density detected by the Si sensor of the Si radiation thermometer when the radiant energy of the black body at 00 ° C. and 350 ° C. is detected. The detected energy density Is (λ) is represented by the product of the radiant energy density Ir (λ) and the light receiving characteristic K (λ) × Tf (λ) of the Si radiation thermometer. The detected energy intensity Is converted into temperature is the detected energy density Is (λ) integrated with the wavelength. That is, the detected energy intensity Is = ∫ {Is (λ)} dλ = ∫ {Ir (λ) · K (λ) · Tf (λ)} dλ.
【００１６】フィルタＢを用いて４００℃の黒体の放射
エネルギを検知した時の検知エネルギ強度と、フィルタ
Ａを用いて３５０℃の黒体の放射エネルギを検知した時
の検知エネルギ強度を比較すると、後者の方がその値は
大きい。温度が低い場合に於いても、検知波長域を広げ
ることで検知するエネルギ強度を高めることが可能であ
り、より低温度までの測定が可能となる。Comparing the detected energy intensity when the radiant energy of the black body at 400 ° C. is detected by using the filter B with the detected energy intensity when the radiant energy of the black body at 350 ° C. is detected by the filter A is compared. , The latter has a larger value. Even when the temperature is low, it is possible to increase the intensity of energy to be detected by widening the detection wavelength range, and it is possible to measure to a lower temperature.
【００１７】しかし一方、検知波長領域を広げるという
ことは、基板からの熱放射（シグナル）以外の余分な光
（ノイズ）をも検知素子へ取り込み易くなることを意味
する。そこで、余分な光を検知させない工夫が必要とな
る。On the other hand, widening the detection wavelength region means that it is easy to take in extra light (noise) other than heat radiation (signal) from the substrate into the detection element. Therefore, it is necessary to devise a method that does not detect excess light.
【００１８】図７の（ａ）にハロゲンランプ光の照射エ
ネルギ密度Ｉｌ（λ）の波長依存性を示す。ランプ光の
照射エネルギ密度は、前述したように丁度Ｓｉセンサの
検知波長域にその極大値を持ち、しかも３５０℃の黒体
の放射エネルギ密度の１０9倍の強度で有する。このた
め、通常の石英窓を用いて全てのランプ光を透過させる
と、ランプ光が強い迷光となって正確な温度計測は困難
である。そこで、光透過窓材の透過率特性Ｔｗ（λ）
を、図５の（ｂ）で示したフィルタ透過特性Ａにおける
透過域を透過させない特性とし、図７の（ｂ）のような
特性もつものに設定する。このようにして得られるラン
プ光の入射ネルギ密度Ｉｌ（λ）×Ｔｗ（λ）は、図７
の（ｃ）に示すようになる。これを図５の（ｃ）のＡ’
に示した受光特性を持つＳｉ放射温度計で検知すると、
Ｓｉ放射温度計のＳｉセンサに入射するノイズ強度Ｉｎ
は、次の式のように表される。FIG. 7A shows the wavelength dependence of the irradiation energy density Il (λ) of the halogen lamp light. The irradiation energy density of the lamp light has its maximum value in the detection wavelength range of the Si sensor, as described above, and has an intensity 10 9 times the radiant energy density of a black body at 350 ° C. Therefore, if all the lamp light is transmitted through a normal quartz window, the lamp light becomes a strong stray light, and it is difficult to measure the temperature accurately. Therefore, the transmittance characteristic Tw (λ) of the light transmitting window material
Is a characteristic that does not allow the transmission region in the filter transmission characteristic A shown in FIG. 5B to be transmitted, and is set to have a characteristic as shown in FIG. 7B. The incident energy density Il (λ) × Tw (λ) of the lamp light thus obtained is shown in FIG.
(C) of FIG. This is A ′ in FIG.
When detected by the Si radiation thermometer having the light receiving characteristics shown in,
Noise intensity In incident on Si sensor of Si radiation thermometer In
Is represented by the following equation.
【００１９】 ノイズ強度Ｉｎ＝∫{Ｉｌ(λ)・Ｔｗ(λ)・Ｋ(λ)・Ｔｆ(λ)}ｄλ……式 ここで、光透過窓材の透過特性Ｔｗ（λ）とＳｉセンサ
前のフィルタの透過特性Ｔｆ（λ）とに重なりのないよ
うに、光透過窓材の透過特性Ｔｗ（λ）を選んでいるの
で、ノイズ強度Ｉｎ（λ）は図８に示すようになり、そ
の積分値はゼロに等しくなる。これにより、高Ｓ／Ｎ比
な測定が可能となる。Noise intensity In = ∫ {Il (λ) Tw (λ) K (λ) Tf (λ)} dλ ... Equation where the transmission characteristic Tw (λ) of the light transmitting window material and the Si sensor Since the transmission characteristic Tw (λ) of the light transmitting window material is selected so as not to overlap the transmission characteristic Tf (λ) of the previous filter, the noise intensity In (λ) becomes as shown in FIG. Its integral value is equal to zero. This enables measurement with a high S / N ratio.
【００２０】なお上述の説明では、図５の（ｂ）におけ
るフィルタ透過特性Ａと重なりを持たない光透過窓材を
用いた場合について述べたが、フィルタ透過特性Ｂを有
するフィルタ（フィルタＢ）を用いて放射エネルギを検
知しようとする場合には、当然ながら、フィルタ透過特
性Ｂと重なりを持たない光透過窓材の使用がノイズレベ
ルの低減に有用である。In the above description, the case where the light transmission window material having no overlap with the filter transmission characteristic A in FIG. 5B is used, but a filter having a filter transmission characteristic B (filter B) is used. When the radiant energy is to be detected by using the radiant energy, the use of a light transmitting window material having no overlap with the filter transmission characteristic B is naturally useful for reducing the noise level.
【００２１】[0021]
【実施例】以下、本発明の各実施例を説明する。EXAMPLES Examples of the present invention will be described below.
【００２２】〈第１実施例〉本実施例は、ＣＶＤ装置に
おける基板（ウエハ）温度のモニタ方法への適用例であ
り、図１は本実施例による基板温度のモニタ方法が適用
されるＣＶＤ装置の概略構成図である。同図に示すよう
に、チャンバ内の厚み５ｍｍのＳｉＣ製のサセプタ１上
に、温度評価用の基板２を設置し、基板裏面から基板２
の径よりも大きな径を有する光透過窓３を通して、ハロ
ゲンランプ４の発光で基板２を加熱するようにした。温
度評価用の基板２は、Ｓｉベアウエハに０．０７６ｍｍ
のアルメル・クロメル熱電対をセラミクスボンドで貼付
けたもので、この熱電対の出力はチャンバ上部に設置し
た温度表示ユニット５に送出され、温度表示ＴA として
参考までに示されるようにした。<First Embodiment> This embodiment is an example of application to a substrate (wafer) temperature monitoring method in a CVD apparatus. FIG. 1 is a CVD apparatus to which the substrate temperature monitoring method according to the present embodiment is applied. 2 is a schematic configuration diagram of FIG. As shown in the figure, a substrate 2 for temperature evaluation is set on a susceptor 1 made of SiC having a thickness of 5 mm in the chamber, and the substrate 2 is placed from the backside of the substrate.
The substrate 2 is heated by the light emission of the halogen lamp 4 through the light transmission window 3 having a diameter larger than The substrate 2 for temperature evaluation is a Si bare wafer with 0.076 mm
The alumel and chromel thermocouples of No. 1 were attached with ceramics bonds, and the output of this thermocouple was sent to the temperature display unit 5 installed at the upper part of the chamber, and the temperature was displayed as T A for reference.
【００２３】本発明による基板（ウエハ）温度のモニタ
方法を実施するために、基板２の裏面近傍には導光体６
の受光端部８が位置付けられている。この導光体６は直
径１．５ｍｍの石英ロッドを１回曲げて略Ｌ字形に形成
され、受光端部８がＣＶＤの原料ガスや反応生成ガス
（図示せず）に接触することを防ぐために、パージＮ2
ガスの導入口９の付いたステンレス製の管状のカバー１
０により保護されている。また、この管状のカバー１０
は温度測定のノイズとなるランプ光１１が導光体６（石
英ロッド）の側面より入射することを防ぐ働きがある。
導光体６のチャンバ外へ導出された端部は、直径１ｍｍ
のファイバーケーブル１２に直接接続され、これにより
基板２からの放射光は、Ｓｉ放射温度計１３に伝送され
る。そして、Ｓｉ放射温度計１３内のフィルタ１４によ
り波長を選択された放射光は、Ｓｉフォトダイオード
（Ｓｉセンサ）１５で検出され、アンプ１６で増幅後、
温度表示ＴB として温度表示ユニット１７に示される。
なお、放射光の伝達ロスを極力抑えるために、上記した
ように導光体（石英ロッド）６の径をファイバーケーブ
ル１２よりも大きくすること、並びに、導光体６とファ
イバーケーブル１２の端面同志を直接接触させた接続構
造とすることが有用である。また、ファイバーケーブル
１２の径は、導光体６の径との兼ね合いもあるが、許容
される範囲で太くすることが放射光の伝達ロスを抑える
上で望ましく、ファイバーケーブル１２の直径は少なく
とも０．５ｍｍ以上を確保するようにされる。In order to carry out the substrate (wafer) temperature monitoring method according to the present invention, a light guide 6 is provided near the back surface of the substrate 2.
The light receiving end 8 of is positioned. The light guide 6 is formed by bending a quartz rod having a diameter of 1.5 mm once to form an approximately L shape, and prevents the light receiving end 8 from coming into contact with a CVD source gas or a reaction product gas (not shown). , Purge N 2
Stainless steel tubular cover 1 with gas inlet 9
Protected by 0. Also, this tubular cover 10
Has a function of preventing the lamp light 11 which is a noise of temperature measurement from entering from the side surface of the light guide 6 (quartz rod).
The end portion of the light guide body 6 led out of the chamber has a diameter of 1 mm.
Is directly connected to the fiber cable 12, and the radiation light from the substrate 2 is transmitted to the Si radiation thermometer 13. The radiated light whose wavelength is selected by the filter 14 in the Si radiation thermometer 13 is detected by the Si photodiode (Si sensor) 15, amplified by the amplifier 16, and
It is shown on the temperature display unit 17 as a temperature display T B.
In order to suppress the transmission loss of the emitted light as much as possible, the diameter of the light guide (quartz rod) 6 is made larger than that of the fiber cable 12 as described above, and the end faces of the light guide 6 and the fiber cable 12 are the same. It is useful to provide a connection structure in which Although the diameter of the fiber cable 12 has a trade-off with the diameter of the light guide 6, it is desirable to make the diameter thicker within an allowable range in order to suppress the transmission loss of the radiated light, and the diameter of the fiber cable 12 is at least 0. It is designed to secure at least 0.5 mm.
【００２４】また、本発明のフィルタ１４およびＳｉセ
ンサ１５を用いた放射温度計１３と比較するために、従
来から低温測定用の放射温度計として知られているＨｇ
−Ｃｄ−Ｔｅセンサを用いた放射温度計２４も設置して
ある。なお、公知のようにＣＶＤの反応原料ガス１８
は、基板２の表面にガスシャワ１９により供給される。For comparison with the radiation thermometer 13 using the filter 14 and the Si sensor 15 of the present invention, Hg which is conventionally known as a radiation thermometer for low temperature measurement.
A radiation thermometer 24 using a -Cd-Te sensor is also installed. As is well known, the CVD reaction source gas 18
Are supplied to the surface of the substrate 2 by the gas shower 19.
【００２５】本発明のポイントは、チャンバ内に導入さ
れたランプ光１１と、放射温度計１３に取り込む放射光
（図示せず）の波長のオーバーラップを無くすことにあ
る。これを実現するようにした本実施例における、光透
過窓３の透過特性と放射温度計１３のフィルタ１４の透
過特性とを図９に示した。本実施例のフィルタ１４は、
直径６ｍｍ、厚み２．４ｍｍの干渉フィルタであり、ま
た、光透過窓３は、石英基板上に多層膜をコーティング
したもので、直径２４０ｍｍ、厚み１０ｍｍである。な
お本実施例では、ランプ光１１の熱による光透過窓３の
劣化を防止するため、図１に示すように、ハロゲンラン
プ４には排風ファン７を取付けてランプハウス２０を冷
却するとともに、窓材とランプとの間に石英板２１で囲
まれた領域を作り、ここに圧空導入口２２より圧空を流
して光透過窓３の冷却を行うようにしている。The point of the present invention is to eliminate the wavelength overlap between the lamp light 11 introduced into the chamber and the radiation light (not shown) taken into the radiation thermometer 13. FIG. 9 shows the transmission characteristic of the light transmission window 3 and the transmission characteristic of the filter 14 of the radiation thermometer 13 in the present embodiment that realizes this. The filter 14 of this embodiment is
The interference filter has a diameter of 6 mm and a thickness of 2.4 mm, and the light transmission window 3 is a quartz substrate coated with a multilayer film and has a diameter of 240 mm and a thickness of 10 mm. In this embodiment, in order to prevent the deterioration of the light transmitting window 3 due to the heat of the lamp light 11, as shown in FIG. 1, an exhaust fan 7 is attached to the halogen lamp 4 to cool the lamp house 20, and A region surrounded by a quartz plate 21 is formed between the window member and the lamp, and compressed air is made to flow through the compressed air introduction port 22 to cool the light transmitting window 3.
【００２６】上記した光透過窓３を挿入した効果を、図
１０に示す。窓材を従来の石英窓材と多層膜をコーティ
ングした窓材にした場合とで、基板（ウエハ）の温度測
定性能の違いを評価した。ランプ光照射を開始し、熱電
対の読み（前記表示温度ＴA）と放射温度計１３の読み
（前記表示温度ＴB ）とを同時に記録した。従来の石英
窓材を用いた方法では、４００℃以下はノイズに埋もれ
てしまい正確な計測は不可能であったが、光カット領域
を設けた本実施例の窓材（本実施例の光透過窓３）を用
いた場合には、測定下限は３００℃まで下がり、高Ｓ／
Ｎ化の効果が確認された。なお、３００℃は本実施例の
放射温度計１３の最低表示温度であり、温度計の表示を
下げることが出来ればさらなる低温測定の可能性があ
る。The effect of inserting the above-mentioned light transmitting window 3 is shown in FIG. The difference in the temperature measurement performance of the substrate (wafer) was evaluated when the window material was a conventional quartz window material and a window material coated with a multilayer film. Lamp light irradiation was started, and the thermocouple reading (display temperature T A ) and the radiation thermometer 13 reading (display temperature T B ) were recorded at the same time. With the conventional method using a quartz window material, accurate measurement is impossible because it is buried in noise at 400 ° C. or lower, but the window material of this embodiment provided with a light cut region (light transmission of this embodiment When the window 3) is used, the lower limit of measurement drops to 300 ° C and high S /
The effect of N conversion was confirmed. It should be noted that 300 ° C. is the minimum display temperature of the radiation thermometer 13 of the present embodiment, and there is a possibility of further low temperature measurement if the display of the thermometer can be lowered.
【００２７】図１０の測定は、放射温度計１３の放射率
を一定の値０．６３に固定して行ったものである。な
お、Ｓｉの透過域の波長の光を検知波長とした場合に
は、放射率は温度に大きく依存した。いま、０．９μｍ
を検知光としたと仮定し、放射率の変化を、図１０のデ
ータに基づき計算した。Ｓｉセンサ１５で検知し表示温
度に変換される放射エネルギ密度は、真の温度での放射
エネルギ密度に真の放射率を掛け合わせたものである。
すなわち、放射温度計１３の表示温度をＴ2 とし、この
時に設定した放射率をε2 とし、実測した基板温度をＴ
1 、真の放射率をε1 とすると、次の式のように表さ
れる。The measurement of FIG. 10 is performed by fixing the emissivity of the radiation thermometer 13 to a constant value of 0.63. When light having a wavelength in the Si transmission region was used as the detection wavelength, the emissivity greatly depended on the temperature. 0.9 μm now
The change in emissivity was calculated based on the data in FIG. The radiant energy density detected by the Si sensor 15 and converted into the display temperature is the radiant energy density at the true temperature multiplied by the true emissivity.
That is, the display temperature of the radiation thermometer 13 is T 2 , the emissivity set at this time is ε 2 , and the measured substrate temperature is T 2.
1 and the true emissivity is ε 1 , it is expressed by the following equation.
【００２８】 ε2×ρ(Ｔ2)＝ε1×ρ(Ｔ1) ……式 但し、式においてρ（Ｔ）は、前述したPlanckの輻射
式（前記式）より計算される温度Ｔにおける放射エネ
ルギ密度である。Ε 2 × ρ (T 2 ) = ε 1 × ρ (T 1 ) ... Formula However, in the formula, ρ (T) is at the temperature T calculated from the above-mentioned Planck's radiation formula (the formula). Radiant energy density.
【００２９】上記したように、０．９μｍを検知光とし
て計算した結果を図１１に示した。３００℃から５００
℃の範囲において、０．９μｍの放射光は温度依存が殆
どないが、同様にＨｇ−Ｃｄ−Ｔｅ放射温度計２４を用
いて計測した値より求めた１０μｍの放射光の放射率
は、温度に大きく依存し約１．５倍の変化を示した。FIG. 11 shows the result of calculation using 0.9 μm as the detection light as described above. 300 ° C to 500
In the range of ℃, the radiant light of 0.9 μm has almost no temperature dependence, but the emissivity of the radiant light of 10 μm obtained from the value measured using the Hg-Cd-Te radiation thermometer 24 is similar to the temperature. It largely depended on the change of about 1.5 times.
【００３０】Ｓｉ放射温度計１３を用いた場合と、Ｈｇ
−Ｃｄ−Ｔｅ放射温度計２４を用いた場合との、放射温
度計の表示温度と真の値との比較を図１２に示した。図
１２の（ｂ）に示すように、Ｈｇ−Ｃｄ−Ｔｅ放射温度
計２４（検知波長１０μｍ）では、放射率の温度依存性
の影響を受けて表示が真の値からずれてしまい、広範囲
における温度計測が困難であったのに対し、図１２の
（ａ）に示すように、本実施例のＳｉ放射温度計１３
（検知波長０．９μｍ）を用いた場合には、広範囲にわ
たり正確な温度計測が可能であることが確認された。When the Si radiation thermometer 13 is used, Hg
FIG. 12 shows a comparison between the display temperature of the radiation thermometer and the true value when the -Cd-Te radiation thermometer 24 is used. As shown in FIG. 12B, in the Hg-Cd-Te radiation thermometer 24 (detection wavelength 10 μm), the display deviates from the true value due to the influence of the temperature dependence of the emissivity, and thus the display in a wide range. Although it was difficult to measure the temperature, as shown in FIG. 12A, the Si radiation thermometer 13 of the present embodiment was used.
It was confirmed that when (detection wavelength 0.9 μm) was used, accurate temperature measurement was possible over a wide range.
【００３１】次に、種々の膜を堆積したウエハの温度を
計測した結果を図１３に示す。従来より用いられている
Ｈｇ−Ｃｄ−Ｔｅ放射温度計２４（検知波長１０μｍ）
では、図１３の（ｂ）に示すように、Ｓｉウエハの透過
光の影響により、ウエハ表面の材質によって表示温度が
異なってしまうという問題点があったが、検知波長０．
９μｍの本実施例のＳｉ放射温度計１３を用いた場合、
ウエハ種によらず３００℃から５００℃の範囲において
±５℃の誤差範囲内での温度計測が可能であることが確
認された。Next, FIG. 13 shows the results of measuring the temperatures of the wafers on which various films are deposited. Conventionally used Hg-Cd-Te radiation thermometer 24 (detection wavelength: 10 μm)
Then, as shown in FIG. 13B, there is a problem that the display temperature varies depending on the material of the wafer surface due to the influence of the transmitted light of the Si wafer.
In the case of using the Si radiation thermometer 13 of the present embodiment of 9 μm,
It was confirmed that the temperature can be measured within the error range of ± 5 ° C in the range of 300 ° C to 500 ° C regardless of the wafer type.
【００３２】〈第２実施例〉次に、ランプアニール装置
への適用例を、本発明の第２実施例として説明する。図
１４は、本実施例による基板（ウエハ）温度のモニタ方
法が適用されるランプアニール装置の概略構成図であ
る。装置構成は前述した図１のＣＶＤ装置とほぼ同じで
あるので、異なる点のみを記述する。ランプアニール装
置では、基板温度の急激な昇降が必要であり、このた
め、基板（ウエハ）２はランプ光１１が直接当たるよう
にリング状の石英製サセプタ１にウエハ周辺部で支えら
れ設置される。サセプタ１には、サセプタ温度測定用に
１ｍｍφのアルメル・クロメル熱電対２５を導入し、こ
れにより温度表示ユニット２６にてサセプタ温度が温度
表示ＴC として測定表示可能となっている。ここで、ラ
ンプアニール装置では例えば室温から１２００℃までの
広範囲の温度制御を行う。このため、熱放射光は指数関
数的に増加するので、一つの温度計で全ての温度領域を
測定することは難しい。そこで、本実施例ではＳｉセン
サ１５の前にＮＤフィルタ２７を挿入し、広範囲の測定
を可能とした。<Second Embodiment> Next, an application example to a lamp annealing apparatus will be described as a second embodiment of the present invention. FIG. 14 is a schematic configuration diagram of a lamp annealing apparatus to which the substrate (wafer) temperature monitoring method according to the present embodiment is applied. Since the apparatus configuration is almost the same as the above-described CVD apparatus in FIG. 1, only different points will be described. In the lamp annealing apparatus, the substrate temperature needs to be rapidly raised and lowered. Therefore, the substrate (wafer) 2 is supported by the ring-shaped quartz susceptor 1 at the peripheral portion of the wafer so that the lamp light 11 directly hits the substrate. . A 1 mmφ alumel-chromel thermocouple 25 for measuring the susceptor temperature is introduced into the susceptor 1, whereby the temperature display unit 26 can measure and display the susceptor temperature as a temperature display T C. Here, in the lamp annealing device, temperature control is performed in a wide range from room temperature to 1200 ° C., for example. For this reason, since the thermal radiation light increases exponentially, it is difficult to measure all temperature regions with one thermometer. Therefore, in this embodiment, the ND filter 27 is inserted in front of the Si sensor 15 to enable measurement in a wide range.
【００３３】図１５に、ランプ４にて基板（ウエハ）温
度を急激に変化させた際の、放射温度計１３の読み（温
度表示ＴB ）と、サセプタ温度（温度表示ＴC ）と、基
板２上の熱電対の読み（温度表示ＴA ）とを示した。１
分でプロセス温度９００℃まで上げると、放射温度計１
３が最も応答が早く、ついで基板上熱電対の読み、サセ
プタ上熱電対の読みの順で応答性が鈍る。また、降温時
の応答性も同様の順序であった。ここで、ランプ４の温
度はランプ点灯後数秒で９００℃程度に上がり、通常、
加熱初期の放射温度計はその迷光のために表示温度が高
くなるが、本実施例においてはそのような影響は観測さ
れなかった。In FIG. 15, the reading (temperature display T B ) of the radiation thermometer 13 and the susceptor temperature (temperature display T C ) when the substrate (wafer) temperature is rapidly changed by the lamp 4 and the substrate are shown. The thermocouple readings above 2 (temperature display T A ) are shown. 1
Raising the process temperature to 900 ° C in minutes, the radiation thermometer 1
No. 3 has the fastest response, followed by slower response in the order of reading the thermocouple on the substrate and then reading the thermocouple on the susceptor. In addition, the responsiveness during cooling was in the same order. Here, the temperature of the lamp 4 rises to about 900 ° C. within a few seconds after the lamp is turned on,
The radiation thermometer in the early stage of heating has a high display temperature due to the stray light, but no such effect was observed in this example.
【００３４】〈第３実施例〉図１６に、メタルハライド
ランプの発光波長分布を示す。これを用いて基板を加熱
し、２μｍの放射光を検知するＰｂＳセンサで基板温度
を測定した。図１６に示すように、メタルハライドラン
プには２μｍの発光はないため、通常の石英窓を光透過
窓として使用した際にも、迷光の影響は無い。しかも、
検知波長が０．９μｍに比較して長いために検知する放
射光量が多くなり、８０℃までの低温測定が可能であっ
た。<Third Embodiment> FIG. 16 shows the emission wavelength distribution of a metal halide lamp. The substrate was heated using this, and the substrate temperature was measured with a PbS sensor that detects radiation of 2 μm. As shown in FIG. 16, since the metal halide lamp does not emit light of 2 μm, there is no effect of stray light when a normal quartz window is used as a light transmission window. Moreover,
Since the detection wavelength is longer than 0.9 μm, the amount of radiated light to be detected is large and low temperature measurement up to 80 ° C. is possible.
【００３５】[0035]
【発明の効果】以上詳述したように本発明によれば、放
射温度計で検知しようとする波長領域の光を、測定系内
に入れないようにしているので、検知エネルギ強度のＳ
／Ｎ比を上げることができ、正確な低温度測定が可能と
なり、半導体製造プロセスにおける高精度な温度制御に
大いに貢献する。As described above in detail, according to the present invention, the light in the wavelength region to be detected by the radiation thermometer is prevented from entering the measuring system, so that S of the detected energy intensity is detected.
The / N ratio can be increased and accurate low temperature measurement can be performed, which greatly contributes to highly accurate temperature control in the semiconductor manufacturing process.
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明の第１実施例に係る基板（ウエハ）温度
の測定方法が適用されるＣＶＤ装置の構成図である。FIG. 1 is a configuration diagram of a CVD apparatus to which a substrate (wafer) temperature measuring method according to a first embodiment of the present invention is applied.
【図２】Ｓｉ分光放射率の温度依存性を示す線図であ
る。FIG. 2 is a diagram showing temperature dependence of Si spectral emissivity.
【図３】Planckの黒体放射の式に基づいて算出される各
温度における放射エネルギ密度の波長依存性を示す線図
である。FIG. 3 is a diagram showing wavelength dependence of radiant energy density at each temperature calculated based on Planck's black body radiation formula.
【図４】４００℃と３５０℃とにおける放射エネルギ密
度の波長依存性を示す線図である。FIG. 4 is a diagram showing wavelength dependence of radiant energy density at 400 ° C. and 350 ° C.
【図５】（ａ）はＳｉセンサの検出特性を示す線図であ
り、（ｂ）はフィルタの透過特性を示す線図であり、
（ｃ）はＳｉ放射温度計の受光特性を示す線図である。5A is a diagram showing a detection characteristic of a Si sensor, FIG. 5B is a diagram showing a transmission characteristic of a filter, FIG.
(C) is a diagram showing a light receiving characteristic of a Si radiation thermometer.
【図６】図５に示す受光特性のＳｉ放射温度計による４
００℃と３５０℃の黒体の放射光の検知エネルギ密度を
示す線図である。6 is a graph of the light receiving characteristic shown in FIG.
It is a diagram which shows the detected energy density of the radiated light of a black body of 00 degreeC and 350 degreeC.
【図７】（ａ）はランプ光の照射エネルギ密度の波長依
存性を示す線図であり、（ｂ）は光透過窓材の透過率特
性を示す線図であり、（ｃ）は光透過窓材を通ったラン
プ光の入射エネルギ密度の波長依存性を示す線図であ
る。7A is a diagram showing wavelength dependence of irradiation energy density of lamp light, FIG. 7B is a diagram showing transmittance characteristics of a light transmitting window material, and FIG. 7C is light transmitting. It is a diagram which shows the wavelength dependence of the incident energy density of the lamp light which passed the window material.
【図８】ノイズ強度の図５に示したＳｉ放射温度計によ
る検知エネルギ密度を表わす線図である。8 is a diagram showing the noise energy detected energy density by the Si radiation thermometer shown in FIG.
【図９】本発明の第１実施例で用いたフィルタの透過特
性と光透過窓材の透過特性とを示す線図である。FIG. 9 is a diagram showing a transmission characteristic of a filter and a transmission characteristic of a light transmitting window material used in the first embodiment of the present invention.
【図１０】本発明の第１実施例において光透過窓材の透
過波長領域を限定した効果を示す線図である。FIG. 10 is a diagram showing the effect of limiting the transmission wavelength region of the light transmitting window material in the first embodiment of the present invention.
【図１１】本発明の第１実施例によるＳｉ放射温度計
（０．９μｍ）と従来のＨｇ−Ｃｄ−Ｔｅ放射温度計
（１０μｍ）を用いた場合の放射率の温度依存性を対比
して示す線図である。FIG. 11 compares the temperature dependence of the emissivity when the Si radiation thermometer (0.9 μm) according to the first embodiment of the present invention and the conventional Hg-Cd-Te radiation thermometer (10 μm) are used. It is a diagram showing.
【図１２】（ａ）は本発明の第１実施例によるＳｉ放射
温度計（０．９μｍ）を用いたウエハ温度の計測値と真
の値とを示す線図であり、（ｂ）は従来のＨｇ−Ｃｄ−
Ｔｅ放射温度計（１０μｍ）を用いたウエハ温度の計測
値と真の値とを示す線図である。FIG. 12A is a diagram showing a measured value and a true value of a wafer temperature using the Si radiation thermometer (0.9 μm) according to the first embodiment of the present invention, and FIG. Hg-Cd-
It is a diagram which shows the measured value and true value of the wafer temperature using a Te radiation thermometer (10 μm).
【図１３】（ａ）は本発明の第１実施例によるＳｉ放射
温度計（０．９μｍ）を用いた種々のウエハ温度の計測
値を示す線図であり、（ｂ）は従来のＨｇ−Ｃｄ−Ｔｅ
放射温度計（１０μｍ）を用いた種々のウエハ温度の計
測値を示す線図である。13 (a) is a diagram showing various wafer temperature measurement values using the Si radiation thermometer (0.9 μm) according to the first embodiment of the present invention, and FIG. 13 (b) is a conventional Hg-. Cd-Te
It is a diagram which shows the measured value of various wafer temperatures using a radiation thermometer (10 micrometers).
【図１４】本発明の第２実施例に係る基板（ウエハ）温
度の測定方法が適用されるランプアニール装置の構成図
である。FIG. 14 is a configuration diagram of a lamp annealing apparatus to which a substrate (wafer) temperature measuring method according to a second embodiment of the present invention is applied.
【図１５】本発明の第２実施例によるＳｉ放射温度計に
よるウエハ温度の測定結果と、他の手法による温度測定
結果とを対比して示す線図である。FIG. 15 is a diagram showing a wafer temperature measurement result by the Si radiation thermometer according to the second embodiment of the present invention and a temperature measurement result by another method for comparison.
【図１６】本発明の第３実施例で用いたメタルハライド
ランプの発光分布を示す線図である。FIG. 16 is a diagram showing a light emission distribution of a metal halide lamp used in a third embodiment of the present invention.
２ 基板 ３ 光透過窓 ４ ランプ ６ 導光体（石英ロッド） １０ 管状のカバー １１ ランプ光 １２ ファイバケーブル １３ Ｓｉ放射温度計 １４ フィルタ １５ Ｓｉフォトダイオード 2 substrate 3 light transmission window 4 lamp 6 light guide (quartz rod) 10 tubular cover 11 lamp light 12 fiber cable 13 Si radiation thermometer 14 filter 15 Si photodiode
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小林 秀 神奈川県横浜市戸塚区吉田町292番地 株 式会社日立製作所生産技術研究所内 (72)発明者 渡辺 智司 茨城県土浦市神立町502番地 株式会社日 立製作所機械研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hide Kobayashi 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa, Ltd. Within the Hitachi, Ltd. Institute of Industrial Science (72) Inventor Satoshi Watanabe 502, Kintate-cho, Tsuchiura-shi, Ibaraki Co., Ltd. Hiritsu Works Mechanical Research Center
Claims (20)
ランプ光により光透過窓を通して加熱し、加熱された基
板からの熱放射光を導光体で集光して外部のファイバー
ケーブルの一端に伝達させ、該ファイバーケーブルの他
端に伝送された光をフィルタにより波長を選択し、検知
素子にて検知して温度を計測する基板の温度測定方法に
おいて、 前記隔離された雰囲気内に導入される光の波長が、前記
検知素子で検知する光の波長を含まないことを特徴とす
る基板温度のモニタ方法。1. A substrate installed in an isolated atmosphere is heated by a lamp light through a light transmission window, and heat radiation light from the heated substrate is condensed by a light guide to one end of an external fiber cable. In the temperature measuring method of the substrate, the wavelength of the light transmitted to the other end of the fiber cable is selected by the filter, and the temperature is detected by the detection element to measure the temperature. The method for monitoring the substrate temperature is characterized in that the wavelength of the emitted light does not include the wavelength of the light detected by the detection element.
検知素子で検知される波長領域を含まないことを特徴と
する基板温度のモニタ方法。2. The substrate temperature monitoring method according to claim 1, wherein the wavelength region of the lamp light does not include a wavelength region detected by the detection element via the filter.
とが重ならないことを特徴とする基板温度のモニタ方
法。3. The substrate temperature monitoring method according to claim 1, wherein the transmission wavelength range of the light transmission window and the transmission wavelength range of the filter do not overlap with each other.
えるために、前記導光体の直径が前記ファイバーケーブ
ルの直径より大きいことを特徴とする基板温度のモニタ
方法。4. The substrate according to claim 1, wherein the diameter of the light guide is larger than the diameter of the fiber cable in order to suppress transmission loss of radiated light as much as possible in order to lower the measurement temperature. How to monitor temperature.
えるために、前記導光体と前記ファイバーケーブルとの
接続が別の材料を介さずに両端面を直接接触させた接続
構造とされたことを特徴とする基板温度のモニタ方法。5. The light guide according to claim 1, wherein the light guide and the fiber cable are connected at both ends without using another material in order to suppress the transmission loss of the radiated light as much as possible in order to lower the measurement temperature. A substrate temperature monitoring method, characterized in that a connection structure in which the surfaces are in direct contact is employed.
ドであることを特徴とする基板温度のモニタ方法。6. The substrate temperature monitoring method according to claim 1, wherein the detection element that detects the thermal radiation light is a Si photodiode.
たことを特徴とする基板温度のモニタ方法。7. The substrate temperature monitoring method according to claim 1, wherein a metal tubular cover is provided to protect the light guide.
えるために、前記ファイバーケーブルの直径が０．５ｍ
ｍ以上であることを特徴とする基板温度のモニタ方法8. The fiber cable according to claim 1, wherein the diameter of the fiber cable is 0.5 m in order to suppress the transmission loss of the radiated light as much as possible in order to lower the measurement temperature.
Substrate temperature monitoring method characterized by being m or more
射光量の低下を極力抑えるために、検知波長を選択する
前記フィルタの透過波長半値幅が１０１ｎｍ以上である
ことを特徴とする基板温度のモニタ方法。9. The half value width of the transmission wavelength of the filter for selecting the detection wavelength is 101 nm or more in order to suppress the decrease of the amount of radiated light incident on the detection element in order to lower the measurement temperature. A method for monitoring a substrate temperature, comprising:
大きく、前記導光体と前記ファイバーケーブルとの接続
構造が両端面の直接接続によるものであり、また、前記
ファイバーケーブルの直径が０．５ｍｍ以上であって、
検知波長を選択する前記フィルタの透過波長半値幅が１
０１ｎｍ以上であることを特徴とする基板温度のモニタ
方法。10. The diameter of the light guide according to claim 1, which is larger than the diameter of the fiber cable, and the connection structure between the light guide and the fiber cable is based on direct connection of both end surfaces, In addition, the diameter of the fiber cable is 0.5 mm or more,
The full width at half maximum of the transmission wavelength of the filter that selects the detection wavelength is 1
A method for monitoring a substrate temperature, which is 01 nm or more.
て加熱し、基板からの熱放射光を導光体で集光してファ
イバーケーブルの一端に伝達させ、該ファイバーケーブ
ルの他端に伝送された光をフィルタにより波長選択して
検知し温度を計測する基板の温度測定方法において、 前記基板に照射される光の波長が、検知する光の波長を
含まないことを特徴とする基板温度のモニタ方法。11. A substrate is heated by a lamp light through a light transmission window, and heat radiation light from the substrate is collected by a light guide and transmitted to one end of the fiber cable, and transmitted to the other end of the fiber cable. In a substrate temperature measuring method for measuring temperature by detecting light by wavelength selection with a filter, a substrate temperature monitoring method characterized in that the wavelength of light irradiated on the substrate does not include the wavelength of light to be detected. .
れて検知される前記熱放射光の波長領域を含まないこと
を特徴とする基板温度のモニタ方法。12. The method of monitoring a substrate temperature according to claim 11, wherein the wavelength distribution of the lamp light does not include a wavelength region of the thermal radiation light selected and detected by the filter.
とが重ならないことを特徴とする基板温度のモニタ方
法。13. The substrate temperature monitoring method according to claim 11, wherein the transmission wavelength range of the light transmission window and the transmission wavelength range of the filter do not overlap with each other.
えるために、前記導光体の直径が前記ファイバーケーブ
ルの直径より大きいことを特徴とする基板温度のモニタ
方法。14. The substrate according to claim 11, wherein a diameter of the light guide is larger than a diameter of the fiber cable in order to suppress transmission loss of radiated light as much as possible in order to reduce a measurement temperature. How to monitor temperature.
えるために、前記導光体と前記ファイバーケーブルとの
接続が別の材料を介さずに両端面を直接接触させた接続
構造とされたことを特徴とする基板温度のモニタ方法。15. The method according to claim 11, wherein the light guide body and the fiber cable are connected at both ends without using another material in order to suppress the transmission loss of the emitted light as much as possible in order to lower the measurement temperature. A substrate temperature monitoring method, characterized in that a connection structure in which the surfaces are in direct contact is employed.
あることを特徴とする基板温度のモニタ方法。16. The method of monitoring a substrate temperature according to claim 11, wherein the element that detects the thermal radiation light is a Si photodiode.
たことを特徴とする基板温度のモニタ方法。17. The substrate temperature monitoring method according to claim 11, further comprising a metal tubular cover provided to protect the light guide.
えるために、前記ファイバーケーブルの直径が０．５ｍ
ｍ以上であることを特徴とする基板温度のモニタ方法18. The fiber cable according to claim 11, wherein the fiber cable has a diameter of 0.5 m in order to suppress transmission loss of radiated light as much as possible in order to lower the measurement temperature.
Substrate temperature monitoring method characterized by being m or more
子に入射する放射光量の低下を極力抑えるために、検知
波長を選択する前記フィルタの透過波長半値幅が１０１
ｎｍ以上であることを特徴とする基板温度のモニタ方
法。19. The transmission wavelength of the filter for selecting a detection wavelength according to claim 11, in order to suppress a decrease in the amount of radiation light incident on a detection element that detects thermal radiation light in order to lower the measurement temperature. FWHM is 101
A substrate temperature monitoring method, wherein the substrate temperature is not less than nm.
大きく、前記導光体と前記ファイバーケーブルとの接続
構造が両端面の直接接続によるものであり、また、前記
ファイバーケーブルの直径が０．５ｍｍ以上であって、
検知波長を選択する前記フィルタの透過波長半値幅が１
０１ｎｍ以上であることを特徴とする基板温度のモニタ
方法。20. The diameter of the light guide according to claim 11, which is larger than the diameter of the fiber cable, and the connection structure between the light guide and the fiber cable is based on direct connection of both end surfaces, In addition, the diameter of the fiber cable is 0.5 mm or more,
The full width at half maximum of the transmission wavelength of the filter that selects the detection wavelength is 1
A method for monitoring a substrate temperature, which is 01 nm or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5281249A JPH07134069A (en) | 1993-11-10 | 1993-11-10 | Method for monitoring temperature of substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5281249A JPH07134069A (en) | 1993-11-10 | 1993-11-10 | Method for monitoring temperature of substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07134069A true JPH07134069A (en) | 1995-05-23 |
Family
ID=17636443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5281249A Pending JPH07134069A (en) | 1993-11-10 | 1993-11-10 | Method for monitoring temperature of substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07134069A (en) |
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| WO2000058701A1 (en) * | 1999-03-30 | 2000-10-05 | Tokyo Electron Limited | Temperature measurement system |
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- 1993-11-10 JP JP5281249A patent/JPH07134069A/en active Pending
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