JPH07130829A - Manufacture of semiconductor - Google Patents
Manufacture of semiconductorInfo
- Publication number
- JPH07130829A JPH07130829A JP30096993A JP30096993A JPH07130829A JP H07130829 A JPH07130829 A JP H07130829A JP 30096993 A JP30096993 A JP 30096993A JP 30096993 A JP30096993 A JP 30096993A JP H07130829 A JPH07130829 A JP H07130829A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- liquid
- mounting table
- space
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、載置台に静電吸着され
ウエハに、ドライエッチングやプラズマＣＶＤ(Chemica
l Vapor Deposition) 等の処理が施した後、該ウエハを
前記載置台から取り外す半導体製造方法に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to dry etching or plasma CVD (Chemica) on a wafer electrostatically attracted to a mounting table.
The present invention relates to a semiconductor manufacturing method in which the wafer is removed from the mounting table after being subjected to processing such as Vapor Deposition).
【０００２】[0002]
【従来の技術】従来の半導体製造装置においては、ウエ
ハを載置する載置台として、ウエハとの密着性が良い、
静電吸着を利用した所謂静電チャックを用いた載置台が
広く使用されている。2. Description of the Related Art In a conventional semiconductor manufacturing apparatus, as a mounting table on which a wafer is mounted, the adhesion to the wafer is good.
A mounting table using a so-called electrostatic chuck utilizing electrostatic attraction is widely used.
【０００３】図６は従来の静電チャックを用いた載置台
の一例を示した模式図である。図示したように載置台４
０は、所定の間隔で並設された静電吸着用の２つの電極
４１ａ、４１ｂ全体を絶縁体４２で被覆してなる。つま
り載置台４０自体が静電チャックとして構成されてい
る。また２つの電極４１ａ、４１ｂはそれぞれ、直流電
源４３の負側、正側に接続されており、したがってこの
載置台４０は双極型の静電チャックとなっている。FIG. 6 is a schematic view showing an example of a mounting table using a conventional electrostatic chuck. Mounting table 4 as shown
In the case of 0, the two electrodes 41a and 41b for electrostatic attraction arranged in parallel at a predetermined interval are entirely covered with an insulator 42. That is, the mounting table 40 itself is configured as an electrostatic chuck. Further, the two electrodes 41a and 41b are respectively connected to the negative side and the positive side of the DC power source 43, so that the mounting table 40 is a bipolar electrostatic chuck.
【０００４】上記静電チャックからなる載置台４０にお
いては、電源４３より電極４１ａ、４１ｂにそれぞれ負
の電圧、正の電圧が印加されると、それによって生じる
電位差によって絶縁体４２に誘電分極現象が起こる。そ
して、電極４１ａ、４１ｂ上と異符号の電荷が絶縁体４
２の上面にそれぞれ励起され、絶縁体４２の上面に載置
されたウエハＳとの間で静電気力が生じてウエハＳが吸
着保持される。In the mounting table 40 including the electrostatic chuck, when a negative voltage and a positive voltage are applied to the electrodes 41a and 41b from the power source 43, a dielectric polarization phenomenon occurs in the insulator 42 due to the potential difference caused by the applied voltage. Occur. Then, a charge having a sign different from that on the electrodes 41a and 41b is applied to the insulator 4
The wafer S is excited on each of the upper surfaces of the two, and electrostatic force is generated between the wafer S and the wafer S placed on the upper surface of the insulator 42, and the wafer S is attracted and held.
【０００５】[0005]
【発明が解決しようとする課題】上記したように静電チ
ャックは、電極４１ａ、４１ｂ全体を絶縁体４２で被覆
してなるので、絶縁体４２内の特に電極４１ａ、４１ｂ
付近に電荷が溜まって帯電状態となってしまう。そのた
め、ウエハＳの処理が終了した際に電源４３を切って
も、その残留電荷によって即座に吸着力が弱まらず、残
留電荷が少なくなるまで一定時間待たなければウエハＳ
を載置台４０から取り外すことができないという問題が
あった。本発明は上記課題に鑑みてなされたものであ
り、載置台に静電吸着されたウエハを載置台から短時間
で取り外すことができる半導体製造方法を提供すること
を目的としている。As described above, in the electrostatic chuck, since the electrodes 41a and 41b are entirely covered with the insulator 42, the electrodes 41a and 41b in the insulator 42 are particularly covered.
The electric charge accumulates in the vicinity and becomes charged. Therefore, even if the power supply 43 is turned off when the processing of the wafer S is completed, the attraction force does not immediately weaken due to the residual charge, and the wafer S must be waited for a fixed time until the residual charge decreases.
There is a problem in that it cannot be removed from the mounting table 40. The present invention has been made in view of the above problems, and an object of the present invention is to provide a semiconductor manufacturing method capable of removing a wafer electrostatically attracted to a mounting table from the mounting table in a short time.
【０００６】[0006]
【課題を解決するための手段】上記課題を解決するため
に第１の発明は、電極が絶縁体で被覆されてなる載置台
にウエハを静電吸着させて該ウエハに処理を施した後、
そのウエハを前記載置台から取り外す半導体製造方法に
おいて、前記ウエハを前記載置台から取り外すに際し、
前記絶縁体内でかつ前記電極の近傍に設けられた空間内
を常時循環する液体に、該液体の比抵抗を下げるための
媒体を投入して、前記空間内に前記媒体が投入された液
体を通過させ、この後、前記載置台から前記ウエハを取
り外すようにしたものである。In order to solve the above-mentioned problems, a first invention is that after a wafer is electrostatically adsorbed on a mounting table having electrodes covered with an insulator, the wafer is processed.
In the semiconductor manufacturing method of removing the wafer from the mounting table, in removing the wafer from the mounting table,
A medium for lowering the specific resistance of the liquid is introduced into a liquid that constantly circulates in the space provided in the insulator and in the vicinity of the electrode, and the liquid in which the medium is introduced passes through the space. After that, the wafer is removed from the mounting table.
【０００７】また第２の発明は、電極が絶縁体で被覆さ
れてなる載置台にウエハを静電吸着させて該ウエハに処
理を施した後、そのウエハを前記載置台から取り外す半
導体製造方法において、前記ウエハを前記載置台から取
り外すに際し、前記絶縁体内でかつ前記電極の近傍に設
けられた空間内に予め供給された高誘電性の液体を前記
空間内から抜き、この後、前記載置台から前記ウエハを
取り外すようにしたものである。A second aspect of the present invention is a semiconductor manufacturing method, wherein a wafer is electrostatically adsorbed on a mounting table having electrodes covered with an insulator to process the wafer, and then the wafer is removed from the mounting table. When removing the wafer from the mounting table, the high-dielectric liquid previously supplied into the space provided in the insulator and in the vicinity of the electrode is drained from the space, and thereafter, from the mounting table. The wafer is removed.
【０００８】[0008]
【作用】第１の発明によれば、媒体が投入されて導電性
が上がった液体を空間内を通過させることで、電極近傍
に溜まった電荷がその液体に移行して該液体と共に前記
空間外に移動する。その結果、電極の近傍の帯電状態が
速やかに解消されてウエハに対する吸着力が短時間で弱
められ、ウエハが取り外し易くなる。また第２の発明に
よれば、電荷は高誘電性の液体に吸着した状態で電極近
傍に溜まるので、その液体を空間内から抜くことで溜ま
った電荷が前記空間外へと移動する。その結果、電極の
近傍の帯電状態が速やかに解消されてウエハに対する吸
着力が短時間で弱められ、ウエハが取り外し易くなる。According to the first aspect of the present invention, the liquid charged with the medium and having increased conductivity is passed through the space, whereby the charges accumulated in the vicinity of the electrodes are transferred to the liquid and the space outside the space together with the liquid. Move to. As a result, the charged state in the vicinity of the electrodes is promptly eliminated, the attraction force for the wafer is weakened in a short time, and the wafer can be easily removed. Further, according to the second aspect of the present invention, the electric charge is accumulated in the vicinity of the electrode in a state of being adsorbed to the highly dielectric liquid, so that the electric charge accumulated by moving the liquid out of the space moves to the outside of the space. As a result, the charged state in the vicinity of the electrodes is promptly eliminated, the attraction force for the wafer is weakened in a short time, and the wafer can be easily removed.
【０００９】[0009]
【実施例】以下、本発明に係る半導体製造方法の実施例
を図面に基づいて説明する。図１は第１の発明の半導体
製造方法を示した工程図である。本発明方法は、電極が
絶縁体で被覆されてなる載置台に静電吸着されてドライ
エッチング等の処理が施されたウエハを、載置台から取
り外す際に実施される。その実施にあたっては、載置台
の絶縁体内で、かつウエハの静電吸着時に電荷が溜まっ
て帯電状態となる電極の近傍に空間を設ける。そして、
この空間内に液体を常時循環させておく。ここで液体と
しては抵抗率の高い液体、例えば超純水が用いられる。Embodiments of a semiconductor manufacturing method according to the present invention will be described below with reference to the drawings. FIG. 1 is a process diagram showing a semiconductor manufacturing method of the first invention. The method of the present invention is carried out when a wafer, which is electrostatically adsorbed on a mounting table having electrodes covered with an insulator and which has been subjected to a treatment such as dry etching, is removed from the mounting table. In carrying out this, a space is provided in the insulator of the mounting table and near the electrode that is charged when the wafer is electrostatically attracted and becomes charged. And
The liquid is constantly circulated in this space. Here, a liquid having a high resistivity, for example, ultrapure water is used as the liquid.
【００１０】この実施例方法では、まず載置台に吸着保
持されたウエハを載置台から取り外す際に、電源を切っ
て電極への電圧の印加を停止すると共に、空間内を循環
する液体に、その液体の比抵抗を下げる媒体を投入す
る。液体として例えば超純水を用いた場合、超純水の比
抵抗を下げる媒体としては例えばＣＯ2 が使用され、Ｃ
Ｏ2 の投入によって超純水の導電性が上がる。そして、
この超純水にＣＯ2 が投入された液体を空間内を通過さ
せ、この後載置台からウエハを取り外す。In the method of this embodiment, first, when the wafer sucked and held on the mounting table is removed from the mounting table, the power supply is turned off to stop the voltage application to the electrodes, and the liquid circulating in the space A medium for lowering the specific resistance of the liquid is added. When, for example, ultrapure water is used as the liquid, CO 2 is used as a medium for reducing the specific resistance of the ultrapure water, and C
The conductivity of ultrapure water is increased by adding O 2 . And
The liquid in which CO 2 is added to this ultrapure water is passed through the space, and then the wafer is removed from the mounting table.
【００１１】上記したように空間は、載置台の絶縁体内
で、かつウエハの静電吸着時に帯電状態となる電極の近
傍に設けられている。したがって、導電性が上がった液
体を空間内を通過させることで、電極近傍に溜まった電
荷がその空間内の液体に移行して液体と共に空間外へと
移動する。その結果、電極の近傍の帯電状態が速やかに
解消されて吸着力が短時間で弱められ、ウエハが載置台
から取り外し易くなる。つまり、この実施例によればウ
エハを載置台から短時間で取り外すことができる。As described above, the space is provided in the insulator of the mounting table and in the vicinity of the electrode which is charged when the wafer is electrostatically attracted. Therefore, when the liquid having the increased conductivity is passed through the space, the charges accumulated in the vicinity of the electrode are transferred to the liquid in the space and move out of the space together with the liquid. As a result, the charged state in the vicinity of the electrode is promptly eliminated, the suction force is weakened in a short time, and the wafer is easily removed from the mounting table. That is, according to this embodiment, the wafer can be removed from the mounting table in a short time.
【００１２】なお、この実施例では空間内を循環させる
液体として例えば超純水を用い、また媒体としてＣＯ2
を用いた場合を述べたが、これに限定されないのは言う
までもない。また液体は冷媒を兼ねることも可能であ
り、その場合には空間内を循環している液体が冷却機能
を発揮する。In this embodiment, for example, ultrapure water is used as the liquid circulating in the space, and CO 2 is used as the medium.
However, it is needless to say that the present invention is not limited to this. The liquid can also serve as a refrigerant, in which case the liquid circulating in the space exerts a cooling function.
【００１３】図２は第２の発明の半導体製造方法を示し
た工程図である。この実施例においても、載置台の絶縁
体内で、かつウエハの静電吸着時に帯電状態となる電極
の近傍に空間を設ける。そして、載置台に吸着保持され
たウエハを載置台から取り外す前に、予めこの空間内に
高誘電性の液体を供給しておく。ここで高誘電性の液体
としては、例えば純フッ素系の不活性液体やシアノ基を
有する化合物からなる液体等が用いられる。FIG. 2 is a process diagram showing a semiconductor manufacturing method of the second invention. Also in this embodiment, a space is provided in the insulator of the mounting table and in the vicinity of the electrode that is charged when the wafer is electrostatically attracted. Then, before removing the wafer sucked and held on the mounting table from the mounting table, a high dielectric liquid is supplied in advance into this space. Here, as the high dielectric liquid, for example, a pure fluorine-based inert liquid, a liquid including a compound having a cyano group, or the like is used.
【００１４】ウエハを載置台から取り外す際には、電源
を切って電極への電圧の印加を停止すると共に、空間内
に供給されている高誘電性の液体を抜く。その後、載置
台からウエハを取り外す。When the wafer is removed from the mounting table, the power is turned off to stop the voltage application to the electrodes, and the high dielectric liquid supplied into the space is drained. After that, the wafer is removed from the mounting table.
【００１５】この実施例では、電極近傍の空間内に供給
された液体が高誘電性のため、電荷は液体に吸着した状
態で電極近傍に溜まる。したがって、その液体を空間内
から抜くことで、液体と共に溜まった電荷が空間外へと
移動する。その結果、電極の近傍の帯電状態が速やかに
解消されて吸着力が短時間で弱められ、ウエハが載置台
から取り外し易くなる。つまり、この実施例において
も、ウエハを載置台から短時間で取り外すことができ
る。In this embodiment, since the liquid supplied into the space near the electrodes has a high dielectric constant, electric charges are accumulated near the electrodes in a state of being adsorbed by the liquid. Therefore, when the liquid is removed from the space, the electric charge accumulated together with the liquid moves to the outside of the space. As a result, the charged state in the vicinity of the electrode is promptly eliminated, the suction force is weakened in a short time, and the wafer is easily removed from the mounting table. That is, also in this embodiment, the wafer can be removed from the mounting table in a short time.
【００１６】なお、この実施例で使用される液体として
使用可能な例えば純フッ素系の不活性液体やシアノ基を
有する化合物は、冷媒としても用いることができる。し
たがって、空間内に供給される液体を冷媒としても使用
することで、ウエハを所定の温度に制御することも可能
である。The pure liquid inert liquid or the compound having a cyano group that can be used as the liquid used in this embodiment can also be used as the refrigerant. Therefore, it is possible to control the wafer to a predetermined temperature by using the liquid supplied into the space as a coolant.
【００１７】次に、第１、第２の発明の半導体製造方法
に用いる装置について説明する。図３は本発明に用いる
装置の第１の例を示した模式図であり、載置台を示した
ものである。図示したように載置台１０は、静電吸着用
の電極１１全体を絶縁体１２で被覆してなり、載置台１
０自体が静電チャックとして構成されている。Next, an apparatus used in the semiconductor manufacturing methods of the first and second inventions will be described. FIG. 3 is a schematic diagram showing a first example of an apparatus used in the present invention, showing a mounting table. As shown in the figure, the mounting table 10 is formed by covering the entire electrode 11 for electrostatic attraction with an insulator 12.
0 itself is configured as an electrostatic chuck.
【００１８】上記電極１１は例えば平板状をなし、載置
台１０の上面に対して略平行に配置されている。また電
極１１には電源１３が接続されており、電源１３からの
電圧の印加によって後述するように電極１１と載置台１
０に吸着保持されるウエハＳとの間に電位差が与えられ
るように構成されている。つまり、載置台１０は単極型
の静電チャックとなっている。The electrode 11 has, for example, a flat plate shape and is arranged substantially parallel to the upper surface of the mounting table 10. A power source 13 is connected to the electrode 11, and a voltage is applied from the power source 13 to the electrode 11 and the mounting table 1 as described later.
It is configured so that a potential difference is applied to the wafer S which is adsorbed and held at 0. That is, the mounting table 10 is a monopolar electrostatic chuck.
【００１９】このような電極１１の上面近傍でかつ絶縁
体１２内には、上記した液体が供給される空間１４が設
けられている。単極型の静電チャックにおいては、電荷
は特に電位差が生じる箇所、つまりウエハＳに対向する
電極１１の上面付近に溜まりやすく、したがって空間１
４は例えば電極１１の上面全体に亘って形成される。ま
た空間１４には液体の供給管１６と排出管１７とが接続
され、供給管１６と排出管１７は液体制御部１５に接続
されている。そして、液体制御部１５から供給管１６を
介して空間１４に液体が供給され、空間１４内の液体が
排出管１７を介して液体制御部１５へと排出されるよう
になっている。A space 14 to which the above-mentioned liquid is supplied is provided near the upper surface of the electrode 11 and inside the insulator 12. In the unipolar type electrostatic chuck, the electric charge is likely to be accumulated particularly at a position where a potential difference is generated, that is, near the upper surface of the electrode 11 facing the wafer S, and thus the space 1
4 is formed over the entire upper surface of the electrode 11, for example. A liquid supply pipe 16 and a liquid discharge pipe 17 are connected to the space 14, and the liquid supply pipe 16 and the liquid discharge pipe 17 are connected to a liquid control unit 15. Then, the liquid is supplied from the liquid control unit 15 to the space 14 via the supply pipe 16, and the liquid in the space 14 is discharged to the liquid control unit 15 via the discharge pipe 17.
【００２０】上記静電チャックからなる載置台１０にお
いては、電源１３より電極１１に電圧が印加されると、
それによって生じる電位差によって絶縁体１２に誘電分
極現象が起こる。そして、電極１１上と異符号の電荷が
絶縁体１２の上面にそれぞれ励起され、絶縁体１２の上
面に載置されたウエハＳとの間で静電気力が生じてウエ
ハＳが吸着保持される。In the mounting table 10 composed of the electrostatic chuck, when a voltage is applied to the electrode 11 from the power source 13,
A dielectric polarization phenomenon occurs in the insulator 12 due to the potential difference caused thereby. Then, electric charges having a different sign from that on the electrodes 11 are excited on the upper surface of the insulator 12, and electrostatic force is generated between the electrode 11 and the wafer S placed on the upper surface of the insulator 12 to attract and hold the wafer S.
【００２１】なお、半導体製造装置においてこのような
載置台１０には、例えばプラズマを励起するための図示
しない下部電極が設けられ、また載置台１０の上方に
は、下部電極に対向して図示しない上部電極が配置され
る。したがって下部電極に高周波電圧が印加されると、
載置台１０に吸着保持されたウエハＳ上でプラズマ放電
が起こり、ウエハＳがドライエッチングされる。In the semiconductor manufacturing apparatus, such a mounting table 10 is provided with a lower electrode (not shown) for exciting plasma, for example, and above the mounting table 10 is opposed to the lower electrode (not shown). The upper electrode is arranged. Therefore, when a high frequency voltage is applied to the lower electrode,
Plasma discharge occurs on the wafer S sucked and held on the mounting table 10, and the wafer S is dry-etched.
【００２２】このように構成されている載置台１０を用
いて、上記した第１の発明の実施例方法を実施する場
合、液体制御部１５から供給管１６、空間１４及び排出
管１７を介して液体を常時循環させ、空間１４に常時液
体を供給しておく。そして、載置台１０に静電吸着され
たウエハＳを取り外す際に、電源１３を切ると共に、液
体制御部１５にて空間１４を循環する液体に液体の比抵
抗を下げるための媒体を投入する。When carrying out the above-described method according to the first embodiment of the invention using the mounting table 10 thus constructed, the liquid control section 15 passes through the supply pipe 16, the space 14 and the discharge pipe 17. The liquid is constantly circulated, and the liquid is constantly supplied to the space 14. Then, when the wafer S electrostatically adsorbed on the mounting table 10 is removed, the power supply 13 is turned off, and a medium for lowering the specific resistance of the liquid is introduced into the liquid circulating in the space 14 by the liquid controller 15.
【００２３】液体の比抵抗を下げるための媒体を投入す
ることでその液体の導電性が上がり、液体は液体制御部
１５から供給管１６、空間１４、排出管１７を循環す
る。その結果、上記したように電極１１近傍に溜まった
電荷が液体と共に空間１４外へと移動し、電極１１の近
傍の帯電状態が速やかに解消される。したがって、ウエ
ハＳを載置台１０から短時間で取り外すことができる。
なお、上記したように液体を冷媒として用いることも可
能であり、この場合には空間１４はウエハＳの温度制御
用空間も兼ねることとなる。By introducing a medium for reducing the specific resistance of the liquid, the conductivity of the liquid is increased, and the liquid circulates from the liquid control section 15 through the supply pipe 16, the space 14 and the discharge pipe 17. As a result, as described above, the charges accumulated near the electrode 11 move to the outside of the space 14 together with the liquid, and the charged state near the electrode 11 is promptly eliminated. Therefore, the wafer S can be removed from the mounting table 10 in a short time.
It is also possible to use the liquid as the coolant as described above, and in this case, the space 14 also serves as the temperature control space for the wafer S.
【００２４】また、上記のように構成されている載置台
１０を用いて、上記した第２の発明の実施例方法を実施
する場合には、載置台１０に吸着保持されたウエハＳを
載置台１０から取り外す前に、予め液体制御部１５から
供給管１６を介して空間１４に高誘電性の液体を供給し
ておく。そしてウエハを載置台から取り外す際には、電
源１３を切ると共に液体制御部１５から高誘電性の液体
の代わりに空気を空間１４へと送り、空間１４内の高誘
電性の液体を排出管１７を介して抜く。When the mounting table 10 configured as described above is used to carry out the method of the above-described second embodiment of the present invention, the wafer S sucked and held on the mounting table 10 is mounted on the mounting table. Before being removed from 10, the high-dielectric liquid is previously supplied from the liquid control unit 15 to the space 14 via the supply pipe 16. When the wafer is removed from the mounting table, the power supply 13 is turned off, air is sent from the liquid control unit 15 to the space 14 instead of the high-dielectric liquid, and the high-dielectric liquid in the space 14 is discharged from the discharge pipe 17. Pull out through.
【００２５】その結果、ウエハＳの静電吸着時に液体に
吸着した状態で電極近傍に溜まった電荷は、液体と共に
空間１４外と移動し、電極１１の近傍の帯電状態が速や
かに解消される。したがって、ウエハＳを載置台１０か
ら短時間で取り外すことができる。As a result, the charges accumulated in the vicinity of the electrodes in the state of being adsorbed to the liquid when the wafer S is electrostatically adsorbed move to the outside of the space 14 together with the liquid, and the charged state in the vicinity of the electrodes 11 is quickly eliminated. Therefore, the wafer S can be removed from the mounting table 10 in a short time.
【００２６】図４は本発明に用いる装置の第２の例を示
した模式図である。この実施例において、図３に示した
載置台１０と相異するのは、載置台２０が双極型の静電
チャックで構成されている点である。すなわち、図３に
おける電極１１がこの実施例では例えば２つに分割され
ている。そしてこれら２つの電極２１ａ、２１ｂには互
いに異符号の電圧が電源２３より印加され、電極２１ａ
と電極２１ｂ間に電位差が与えられるようになってい
る。FIG. 4 is a schematic diagram showing a second example of the apparatus used in the present invention. In this embodiment, what is different from the mounting table 10 shown in FIG. 3 is that the mounting table 20 is composed of a bipolar electrostatic chuck. That is, the electrode 11 in FIG. 3 is divided into, for example, two in this embodiment. Then, voltages having mutually different signs are applied from the power source 23 to the two electrodes 21a and 21b,
And an electrode 21b is provided with a potential difference.
【００２７】この実施例においても、電極２１ａ、２１
ｂの上面近傍でかつ絶縁体１２内に、液体が供給される
空間１４が設けられている。双極型の静電チャックにお
いては、電荷は特に電位差が生じる箇所、つまり電極２
１ａ、２１ｂ間付近に溜まりやすい。したがって、空間
１４を上記実施例と同様に、例えば電極２１ａ、２１ｂ
に亘ってそれらの上面全体に形成し、上記した実施例方
法のいずれかを実施することにより、載置台２０に静電
吸着されたウエハＳを載置台２０から短時間で取り外す
ことができる。Also in this embodiment, the electrodes 21a, 21
A space 14 to which the liquid is supplied is provided near the upper surface of b and inside the insulator 12. In the bipolar electrostatic chuck, the electric charge is generated particularly at a portion where a potential difference occurs, that is, the electrode 2
It is easy to accumulate near 1a and 21b. Therefore, the space 14 is formed in the same manner as in the above embodiment, for example, the electrodes 21a and 21b.
The wafer S electrostatically adsorbed on the mounting table 20 can be removed from the mounting table 20 in a short time by forming the wafer S over the entire upper surface thereof and carrying out any of the above-described embodiment methods.
【００２８】図５は本発明に用いる装置の第３の例を示
した模式図である。この実施例において、図４の載置台
２０と相異するのは、液体が電極２１ａ、２１ｂ間を通
過するように、空間３４が絶縁体１２内でかつ電極２１
ａ、２１ｂ間に形成されている点である。また図５
（ａ）では、電極２１ａ、２１ｂはいずれも電源１３の
負側に接続されており、載置台３０は単極型の静電チャ
ックからなっている。FIG. 5 is a schematic diagram showing a third example of the apparatus used in the present invention. In this embodiment, what is different from the mounting table 20 in FIG. 4 is that the space 34 is in the insulator 12 and the electrode 21 is so that the liquid passes between the electrodes 21a and 21b.
It is a point formed between a and 21b. Also in FIG.
In (a), the electrodes 21a and 21b are both connected to the negative side of the power supply 13, and the mounting table 30 is composed of a monopolar electrostatic chuck.
【００２９】すなわち、空間３４は例えば電極２１ａ、
２１ｂ間と、それら電極２１ａ、２１ｂの周りに連続し
て形成され、空間３４には液体の供給管１６と排出管１
７が接続されている。また供給管１６と排出管１７との
間には、液体制御部１５が介装されている。この実施例
においても、上記した２つの実施例方法を実施すること
ができ、その方法を実施することで電極２１ａ、２１ｂ
付近の帯電状態と短時間で解消することができる。した
がって、載置台３０に静電吸着されたウエハＳを載置台
３０から短時間で取り外すことができる。That is, the space 34 is, for example, the electrode 21a,
21b and continuously around the electrodes 21a and 21b, and in the space 34, a liquid supply pipe 16 and a discharge pipe 1 are formed.
7 is connected. A liquid control unit 15 is interposed between the supply pipe 16 and the discharge pipe 17. Also in this embodiment, the methods of the above-described two embodiments can be carried out, and by carrying out the method, the electrodes 21a and 21b can be obtained.
It can be eliminated in a short time with the nearby charged state. Therefore, the wafer S electrostatically attracted to the mounting table 30 can be removed from the mounting table 30 in a short time.
【００３０】また図５（ｂ）に示したように、電極２１
ａ、２１ｂ間に電源２３を介在させて、載置台３０を双
極型の静電チャックとして構成した場合には、特に電荷
が溜まる電極２１ａ、２１ｂ間に残留電荷を除去するた
めの液体が供給される。したがって、空間３４を電極２
１ａ、２１ｂ間に形成したこの実施例は、双極型の静電
チャックからなる載置台３０からウエハＳを速やかに取
り外すのに特に有効なものとなる。Further, as shown in FIG.
When the mounting table 30 is configured as a bipolar electrostatic chuck with the power source 23 interposed between a and 21b, a liquid for removing the residual charges is supplied between the electrodes 21a and 21b where the charges are accumulated. It Therefore, the space 34 is connected to the electrode 2
This embodiment, which is formed between 1a and 21b, is particularly effective for quickly removing the wafer S from the mounting table 30 composed of a bipolar electrostatic chuck.
【００３１】[0031]
【発明の効果】以上説明したように第１の発明では、ウ
エハを載置台から取り外す際に、空間内を循環する液体
の導電性を上げて、電極近傍に溜まった電荷を前記液体
と共に前記空間外へと移動させるので、電極の近傍の帯
電状態を速やかに解消することができる。また第２の発
明では、電荷が吸着した高誘電性の液体を空間内から抜
くことで、液体と共に電極付近に溜まった電荷を前記空
間外へと移動させるので、電極の近傍の帯電状態を速や
かに解消することができる。したがって、本発明によれ
ば静電吸着されたウエハを載置台から短時間で取り外す
ことができ、タクトタイムを縮めることが可能となる。As described above, according to the first aspect of the invention, when the wafer is removed from the mounting table, the conductivity of the liquid circulating in the space is increased so that the electric charge accumulated near the electrode is stored together with the liquid in the space. Since it is moved to the outside, the charged state near the electrode can be quickly eliminated. Further, in the second aspect of the present invention, the high dielectric constant liquid with the adsorbed electric charges is removed from the space to move the electric charges accumulated in the vicinity of the electrodes together with the liquid to the outside of the space. Can be resolved. Therefore, according to the present invention, the electrostatically adsorbed wafer can be removed from the mounting table in a short time, and the tact time can be shortened.
【図１】第１の半導体製造方法を示した工程図である。FIG. 1 is a process drawing showing a first semiconductor manufacturing method.
【図２】第２の半導体製造方法を示した工程図である。FIG. 2 is a process drawing showing a second semiconductor manufacturing method.
【図３】本発明に用いる装置の第１の例を示した模式図
である。FIG. 3 is a schematic diagram showing a first example of an apparatus used in the present invention.
【図４】本発明に用いる装置の第２の例を示した模式図
である。FIG. 4 is a schematic diagram showing a second example of the apparatus used in the present invention.
【図５】本発明に用いる装置の第３の例を示した模式図
である。FIG. 5 is a schematic diagram showing a third example of the apparatus used in the present invention.
【図６】従来の載置台の一例を示した模式図である。FIG. 6 is a schematic view showing an example of a conventional mounting table.
１０、２０、３０ 載置台 １１、２１ａ、２１ｂ 電極 １２ 絶縁体 １４、３４ 空間 Ｓ ウエハ 10, 20, 30 Mounting table 11, 21a, 21b Electrode 12 Insulator 14, 34 Space S Wafer
Claims (2)
ウエハを静電吸着させて該ウエハに処理を施した後、そ
のウエハを前記載置台から取り外す半導体製造方法にお
いて、 前記ウエハを前記載置台から取り外すに際し、前記絶縁
体内でかつ前記電極の近傍に設けられた空間内を常時循
環する液体に、該液体の比抵抗を下げるための媒体を投
入して、前記空間内に前記媒体が投入された液体を通過
させ、 この後、前記載置台から前記ウエハを取り外すことを特
徴とする半導体製造方法。1. A semiconductor manufacturing method in which a wafer is electrostatically adsorbed on a mounting table having electrodes covered with an insulator, the wafer is processed, and then the wafer is removed from the mounting table. Upon removal from the mounting table, a medium for lowering the specific resistance of the liquid is added to the liquid that constantly circulates in the space provided in the insulator and in the vicinity of the electrode, and the medium is introduced into the space. A semiconductor manufacturing method, characterized in that the introduced liquid is allowed to pass through and then the wafer is removed from the mounting table.
ウエハを静電吸着させて該ウエハに処理を施した後、そ
のウエハを前記載置台から取り外す半導体製造方法にお
いて、 前記ウエハを前記載置台から取り外すに際し、前記絶縁
体内でかつ前記電極の近傍に設けられた空間内に予め供
給された高誘電性の液体を前記空間内から抜き、 この後、前記載置台から前記ウエハを取り外すことを特
徴とする半導体製造方法。2. A semiconductor manufacturing method, wherein a wafer is electrostatically adsorbed on a mounting table having electrodes covered with an insulator to process the wafer, and then the wafer is removed from the mounting table. Upon removal from the mounting table, the high-dielectric liquid previously supplied into the space provided in the insulator and in the vicinity of the electrode is drained from the space, and then the wafer is removed from the mounting table. A method for manufacturing a semiconductor, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30096993A JPH07130829A (en) | 1993-11-05 | 1993-11-05 | Manufacture of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30096993A JPH07130829A (en) | 1993-11-05 | 1993-11-05 | Manufacture of semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07130829A true JPH07130829A (en) | 1995-05-19 |
Family
ID=17891262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30096993A Pending JPH07130829A (en) | 1993-11-05 | 1993-11-05 | Manufacture of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07130829A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009032432A (en) * | 2007-07-25 | 2009-02-12 | Shibaura Mechatronics Corp | Self-bias control device and plasma processing device |
-
1993
- 1993-11-05 JP JP30096993A patent/JPH07130829A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009032432A (en) * | 2007-07-25 | 2009-02-12 | Shibaura Mechatronics Corp | Self-bias control device and plasma processing device |
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