JPH0698300B2 - Low temperature plasma processing equipment - Google Patents

Low temperature plasma processing equipment

Info

Publication number
JPH0698300B2
JPH0698300B2 JP61138922A JP13892286A JPH0698300B2 JP H0698300 B2 JPH0698300 B2 JP H0698300B2 JP 61138922 A JP61138922 A JP 61138922A JP 13892286 A JP13892286 A JP 13892286A JP H0698300 B2 JPH0698300 B2 JP H0698300B2
Authority
JP
Japan
Prior art keywords
temperature plasma
low temperature
plasma processing
sheet
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61138922A
Other languages
Japanese (ja)
Other versions
JPS62294436A (en
Inventor
正克 高橋
逸雄 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SANDO TECH, INC.
Original Assignee
SANDO TECH, INC.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SANDO TECH, INC. filed Critical SANDO TECH, INC.
Priority to JP61138922A priority Critical patent/JPH0698300B2/en
Publication of JPS62294436A publication Critical patent/JPS62294436A/en
Publication of JPH0698300B2 publication Critical patent/JPH0698300B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J15/00Chemical processes in general for reacting gaseous media with non-particulate solids, e.g. sheet material; Apparatus specially adapted therefor

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、布帛あるいはフイルム等のごとき、シート状
の高分子樹脂成型物(以下、シート状物という。)の低
温プラズマ処理装置に関するものである。
TECHNICAL FIELD The present invention relates to a low-temperature plasma treatment apparatus for a sheet-shaped polymer resin molded article (hereinafter referred to as a sheet-shaped article) such as a cloth or a film.

従来の技術 従来、工業的に織物、編物、不織布などの布帛を連続的
に加工する工程、たとえば染色加工における準備工程に
は、その布帛に付着している撥水性夾雑物を除去あるい
は親水化し、布帛に染料が容易に浸透しうるようにする
ための精練工程があり、染色後には柔軟、撥水、静電防
止、防汚、吸水などの特性を付与する仕上工程がある
が、いずれの工程も水系で処理を行なつている。このた
め従来のこの種の処理工程においては、多量の熱量を必
要とすること、さらには精練工程の場合、処理された布
帛に含まれる残液あるいは夾雑物、および/または付着
物を除去するための多数の水洗機、およびこれらの各水
洗機内に供給すべき多量の水が必要であること、さらに
水洗の排液を廃棄処理するための装置が必要であること
などから、布帛を処理するには、多量の水資源、熱エネ
ルギ、設備費等を要するのが現状である。
2. Description of the Related Art Conventionally, a step of industrially continuously processing a fabric such as a woven fabric, a knitted fabric, and a non-woven fabric, for example, a preparatory step in a dyeing process, removes or hydrophilizes water-repellent contaminants attached to the fabric There is a scouring step to allow the dye to easily penetrate into the fabric, and after dyeing there is a finishing step that imparts properties such as softness, water repellency, antistatic, antifouling and water absorption. Is also treated in the water system. Therefore, in the conventional treatment process of this kind, a large amount of heat is required, and further, in the case of the scouring process, in order to remove residual liquid or contaminants and / or adhering substances contained in the treated fabric. It requires a large number of washing machines, and a large amount of water to be supplied into each of these washing machines, and a device for discarding the waste water of the washing process. Currently requires a large amount of water resources, heat energy, equipment costs, and the like.

上記のごとき点から、最近では、布帛等のシート状物を
低温プラズマ雰囲気で処理して、布帛の糊抜、精練効果
あるいは仕上加工効果を得ることが提案されている。シ
ート状物を処理する従来の内部電極型の低温プラズマ処
理装置は、第2図にその一例を示すごとく、真空を保持
し得るようにした処理室(1)内に、高電圧印加電極板
(2)とそれに平行に一定の間隔をおいて対向する接地
電極板(3)とを配設し、前記高電圧印加電極板(2)
のほぼ中央に給電点(4)を設け、接地電極板(3)の
ほぼ中央に接地点(5)を設け、両電極(2),(3)
間に高周波電源装置(6)により高周波高電圧を印加す
る。真空シールされた入口(8a)から被処理シート状物
(7)を、供給ローラ(9a)により送込み、前記両電極
(2),(3)間で処理し、出口(8b)から巻取ローラ
(9b)により巻取る。なお処理室(1)内は、排気口
(10a)から排気した後、空気,酸素,窒素,等の所定
の気体を、給気口(10b)から所定圧力となるよう供給
する。
From the above points, it has recently been proposed to treat a sheet-like material such as cloth in a low-temperature plasma atmosphere to obtain desizing, scouring effect or finishing effect of cloth. A conventional internal electrode type low temperature plasma processing apparatus for processing a sheet-like material has a high voltage applying electrode plate (a) in a processing chamber (1) capable of holding a vacuum as shown in an example of FIG. 2) and a ground electrode plate (3) facing each other in parallel with a certain distance, and the high voltage applying electrode plate (2)
The feeding point (4) is provided substantially at the center, and the grounding point (5) is provided substantially at the center of the ground electrode plate (3).
A high frequency high voltage is applied between them by the high frequency power supply device (6). The sheet-like material (7) to be treated is fed from the vacuum sealed inlet (8a) by the supply roller (9a), processed between the electrodes (2) and (3), and wound from the outlet (8b). Take up with roller (9b). After exhausting from the exhaust port (10a), the processing chamber (1) is supplied with a predetermined gas such as air, oxygen, and nitrogen so as to have a predetermined pressure from the air supply port (10b).

発明が解決しようとする問題点 上記のシート状物の低温プラズマ処理において、処理室
(1)内でシート状物(7)が処理される際の低温プラ
ズマ雰囲気、すなわち低温プラズマ密度が不均一である
と、シート状物に対する処理が不均一となることは当然
のことである。しかしながら、従来の低温プラズマ処理
装置においては、上記のごとく高電圧印加電極板(2)
と接地電極板(3)とが平行に隔設されているが、平行
に隔設された電極の場合、どのような位置に給電点
(4)を移動させても電極間に均一なプラズマを発生さ
せることは困難であつた。すなわち、高電圧印加電極板
(2)の給電点(4)付近は、電位が高いため、生成す
るプラズマは強くなり、給電点(4)を離れるにしたが
つて電位が下がり、プラズマも弱くなる。上記のごとく
給電点を中心として同心円状に形成されるプラズマの斑
は、そのまま処理効果の斑となる。上記のプラズマの生
成斑を無くすために、電極板面上の電位を均等化するこ
とが考えられるが、その対策として給電点の数を増して
も効果はない。なぜならば、給電点を増すためには、給
電部の長さが必然的に長くなり、長くなればなる程、給
電部と処理室内壁や他の金属類との異常放電が多く発生
する。この放電は単なるエネルギ損にとどまらず、局所
過熱による劣化や錆の発生などを促し、設備の寿命を縮
める結果となる。
DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention In the above-mentioned low temperature plasma treatment of the sheet-like material, the low-temperature plasma atmosphere when the sheet-like material (7) is treated in the processing chamber (1), that is, the low-temperature plasma density is nonuniform. If so, it goes without saying that the processing on the sheet-like material becomes uneven. However, in the conventional low temperature plasma processing apparatus, as described above, the high voltage applying electrode plate (2)
The ground electrode plate (3) and the ground electrode plate (3) are separated in parallel. However, in the case of electrodes separated in parallel, a uniform plasma can be generated between the electrodes no matter what position the feed point (4) is moved. It was difficult to generate. That is, since the electric potential is high in the vicinity of the feeding point (4) of the high voltage applying electrode plate (2), the generated plasma becomes strong, and the potential decreases as the feeding point (4) is separated, and the plasma also weakens. . As described above, the plasma spots concentrically formed around the feeding point directly become the spots of the processing effect. Although it is conceivable to equalize the potentials on the electrode plate surface in order to eliminate the above-mentioned plasma generation spots, increasing the number of power supply points has no effect as a countermeasure. This is because, in order to increase the number of power feeding points, the length of the power feeding unit is inevitably long, and the longer the length, the more abnormal discharge occurs between the power feeding unit and the inner wall of the processing chamber or other metals. This discharge is not only energy loss but also promotes deterioration due to local overheating and generation of rust, resulting in shortening the life of the equipment.

本発明は、シート状物を処理する低温プラズマ処理装置
における、上記のごとき問題点を解決し、均一な処理効
果を得ることができる低温プラズマ処理装置を提供しよ
うとするものである。
The present invention is intended to provide a low temperature plasma processing apparatus capable of solving the above-mentioned problems in a low temperature plasma processing apparatus for processing a sheet-like material and obtaining a uniform processing effect.

問題点を解決するための手段 本発明の低温プラズマ処理装置は、シート状物を処理す
る内部電極型の低温プラズマ処理装置において、高電圧
印加電極のシート状物の幅方向に対応する一側端部に給
電点を設け、対向する接地電極の他方の側端部に接地点
を設け、かつ前記両電極間の間隔を給電点から接地点方
向へ漸減させたことを特徴とするものである。
Means for Solving the Problems A low temperature plasma processing apparatus of the present invention is an internal electrode type low temperature plasma processing apparatus for processing a sheet-like object, wherein one side end of the high voltage applying electrode corresponding to the width direction of the sheet-like object. A feeding point is provided in the portion, a grounding point is provided at the other side end of the opposing grounding electrode, and the distance between the two electrodes is gradually reduced from the feeding point toward the grounding point.

作用 本発明の低温プラズマ処理装置においては、高電圧印加
電極の給電点と、接地電極の接地点間に物理的に距離を
もたせたことにより、両電極間に積極的に高周波電位に
傾きが与えられ、また両電極間の間隔を、給電点から接
地点方向へ向つて漸減させたことにより、両電極間の静
電容量は対向する電極間の距離に反比例して増加するた
め、給電点から接地点方向に向つて漸増する。したがつ
て両電極の各部分の電位と、その部分の静電容量とがバ
ランスして、すなわち静電容量の小さい部分は電位が高
く、逆に静電容量の大きい部分は電位が低い状態でそれ
ぞれ放電して、電極の給電点からの距離にかかわらず、
均一なプラズマが発生し、シート状物の均一な低温プラ
ズマ処理が可能となる。
Action In the low temperature plasma processing apparatus of the present invention, a physical distance is provided between the feeding point of the high voltage applying electrode and the grounding point of the grounding electrode, so that the high frequency potential is positively inclined between both electrodes. In addition, by gradually reducing the distance between both electrodes from the feeding point toward the grounding point, the capacitance between both electrodes increases in inverse proportion to the distance between the opposing electrodes. Gradually increase toward the grounding point. Therefore, the potential of each part of both electrodes and the capacitance of that part are balanced, that is, the part with a small capacitance has a high potential, and the part with a large capacitance has a low potential. Discharge each, regardless of the distance from the feeding point of the electrode,
Uniform plasma is generated, and uniform low-temperature plasma treatment of the sheet-like material becomes possible.

実施例 本発明の一実施例を第1図に基づいて説明する。低温プ
ラズマ処理装置(11)として、真空を保持し得るように
した処理室(12)内に、水平板状の高電圧印加電極(1
3)とそれに対向する板状の接地電極(14)とを配設
し、被処理シート状物(15)を真空シールされた入口
(16a)から供給ローラ(17a)により送込み、両電極
(13),(14)間を通過させて、出口(16b)から巻取
ローラ(17b)により引出して巻取るよう配備する。前
記高電圧印加電極(13)の、被処理シート状物(15)の
幅方向に対応する、一側端部(13a)に給電点(18)を
設けて、対向する接地電極(14)の他方の側端部(14
b)に接地点(19)を設け、給電点(18)に高周波電圧
印加用の高周波電源装置(20)を接続する。さらに、水
平に設置した高電圧印加電極(13)に対し接地電極(1
4)を、給電点(18)を設けた高電圧印加電極(13)の
側端部(13a)と対向する該接地電極(14)の側端部(1
4a)から、接地点(19)を設けた他方の側端部(14b)
側を調節自在に上向きに傾斜させて、両電極(13),
(14)間の間隔を、給電点(18)を設けた側端部(13
a),(14a)間から接地点(19)を設けた側端部(13
b),(14b)間に向つて、各部分の電位と静電容量とが
バランスして均一なプラズマが発生するよう、漸減させ
て設置している。なお両電極(13)(14)の配置におい
て、高電圧印加電極(13)を傾斜させ、接地電極(14)
を水平としてもよく、また両電極(13),(14)を傾斜
させるようにしてもよい。処理室(12)内には、排気口
(21a)から排気した後、空気,酸素,窒素等の所定の
気体を給気口(21b)から所定圧力となるよう供給す
る。
Embodiment An embodiment of the present invention will be described with reference to FIG. As a low-temperature plasma processing device (11), a horizontal plate-shaped high-voltage applying electrode (1) is placed in a processing chamber (12) capable of holding a vacuum.
3) and a plate-like ground electrode (14) facing it are arranged, and the sheet-like object (15) to be treated is fed from a vacuum-sealed inlet (16a) by a supply roller (17a), and both electrodes ( After passing between 13) and (14), the take-up roller (17b) pulls out from the outlet (16b) and winds it. A feeding point (18) is provided at one end (13a) of the high voltage applying electrode (13) corresponding to the width direction of the sheet-like object (15) to be processed, and the grounding electrode (14) facing the electrode is provided. The other side end (14
A grounding point (19) is provided at b), and a high frequency power supply device (20) for applying a high frequency voltage is connected to the feeding point (18). In addition, the ground electrode (1
4) the side end (1) of the ground electrode (14) facing the side end (13a) of the high voltage applying electrode (13) provided with the feeding point (18).
4a) to the other side end (14b) provided with the grounding point (19)
Both sides (13), with the side adjustable and tilted upward
The distance between the (14) and the side end (13
The side end (13) where the grounding point (19) is provided between a) and (14a)
It is installed gradually toward b) and (14b) so that the potential of each part and the capacitance are balanced and uniform plasma is generated. In the arrangement of both electrodes (13) and (14), the high voltage applying electrode (13) is tilted, and the ground electrode (14)
May be horizontal, or both electrodes (13) and (14) may be inclined. After being exhausted from the exhaust port (21a), a predetermined gas such as air, oxygen, and nitrogen is supplied into the processing chamber (12) from the air supply port (21b) to a predetermined pressure.

上記の低温プラズマ処理装置(11)を使用して、ポリエ
ステル加工糸織物を下記の条件で低温プラズマ処理し
た。
Using the above-mentioned low temperature plasma treatment apparatus (11), the polyester processed yarn fabric was subjected to low temperature plasma treatment under the following conditions.

(条件)被処理布帛…ポリエステル加工糸織物(経15
0D,110本/吋;緯150D×2,55本/吋) 処理ガス…酸素 処理ガス流量…4/min 真空度…0.5Torr 処理速度…100cm/min 高周波電源装置周波数…13.46MHz 〃 出力…5Kw 電極寸法…長さ900mm,幅180mm 電極間隔…100〜800mm また比較例として、第2図に示す装置を使用し、電極間
隔を90mmとして、上記実施例と同一布帛を同一プラズマ
発生条件で処理した。
(Conditions) Treated fabric: Polyester processed yarn fabric (War 15
0 D , 110 lines / inch; Weft 150 D x 2,55 lines / inch) Processing gas… Oxygen Processing gas flow rate… 4 / min Vacuum degree… 0.5 Torr Processing speed… 100 cm / min High frequency power supply frequency… 13.46 MHz 〃 Output … 5Kw Electrode dimensions… Length 900mm, width 180mm Electrode spacing… 100 to 800mm As a comparative example, the device shown in FIG. 2 was used, the electrode spacing was 90mm, and the same cloth as the above example under the same plasma generation conditions. Processed.

上記実施例および比較例で得た処理織物の吸水性を、JI
S−1096(バイレツク法)により、織物の幅方向に測定
した。その結果は第3図に示すとおりであり、第1図の
実施例の装置を使用した場合、織物の幅方向に均一で、
かつすぐれた吸水性能が付与された。これに対し、電極
間が平行な第2図の装置を使用した場合、吸水性能は、
織物の幅方向に不均一で、両側端(耳)側ほど低く、好
ましくなかつた。これらの結果からも明らかなごとく、
上記実施例の低温プラズマ処理装置(11)は、プラズマ
発生状態が極めて高効率かつ均一であり、均一な処理を
行なうことができる。
The water absorption of the treated fabrics obtained in the above Examples and Comparative Examples was measured by JI
It was measured in the width direction of the woven fabric by S-1096 (Bayrec method). The results are shown in FIG. 3, and when the apparatus of the embodiment of FIG. 1 was used, the width of the fabric was uniform and
It also has excellent water absorption performance. On the other hand, when the device of FIG. 2 in which the electrodes are parallel to each other is used, the water absorption performance is
It was not uniform in the width direction of the woven fabric, and was lower on both sides (ear) side, which was not preferable. As is clear from these results,
The low-temperature plasma processing apparatus (11) of the above-mentioned embodiment has an extremely high efficiency and uniform plasma generation state, and can perform uniform processing.

発明の効果 本発明の低温プラズマ処理装置は、プラズマ発生状態が
極めて均一かつ効率的であり、シート状物に対して極め
て均一な処理効果を与えることができる。
EFFECTS OF THE INVENTION The low-temperature plasma processing apparatus of the present invention has an extremely uniform and efficient plasma generation state, and can give a very uniform processing effect to a sheet-like material.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の一実施例を示し、(A)は概略側面
図、(B)は概略正面図、(C)は概略平面図、第2図
は従来装置の一例を示し、(A)は概略側面図、(B)
は概略正面図、(C)は概略平面図、第3図は処理織物
の幅方向における吸水性能値を示す線図である。 (11)……低温プラズマ処理装置、(12)……処理室、
(13)……高電圧印加電極、(14)……接地電極、(1
5)……被処理シート状物、(18)……給電点、(19)
……接地点、(20)……高周波電源装置。
FIG. 1 shows an embodiment of the present invention, (A) is a schematic side view, (B) is a schematic front view, (C) is a schematic plan view, and FIG. 2 shows an example of a conventional device. ) Is a schematic side view, (B)
Is a schematic front view, (C) is a schematic plan view, and FIG. 3 is a diagram showing water absorption performance values in the width direction of the treated fabric. (11) …… Low temperature plasma processing equipment, (12) …… Processing room,
(13) …… High voltage application electrode, (14) …… Ground electrode, (1
5) …… Sheet to be processed, (18) …… Feeding point, (19)
…… Grounding point, (20) …… High frequency power supply.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】シート状物を処理する内部電極型の低温プ
ラズマ処理装置において、高電圧印加電極のシート状物
の幅方向に対応する一側端部に給電点を設け、対向する
接地電極の他方の側端部に接地点を設け、かつ前記両電
極間の間隔を給電点から接地点方向へ漸減させたことを
特徴とする低温プラズマ処理装置。
1. An internal electrode type low temperature plasma processing apparatus for processing a sheet-like material, wherein a feeding point is provided at one side end of the high-voltage applying electrode corresponding to the width direction of the sheet-like material, and the opposing grounding electrode is provided. A low temperature plasma processing apparatus, wherein a grounding point is provided on the other side end portion, and a distance between the both electrodes is gradually reduced from a feeding point toward a grounding point.
JP61138922A 1986-06-13 1986-06-13 Low temperature plasma processing equipment Expired - Lifetime JPH0698300B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61138922A JPH0698300B2 (en) 1986-06-13 1986-06-13 Low temperature plasma processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61138922A JPH0698300B2 (en) 1986-06-13 1986-06-13 Low temperature plasma processing equipment

Publications (2)

Publication Number Publication Date
JPS62294436A JPS62294436A (en) 1987-12-21
JPH0698300B2 true JPH0698300B2 (en) 1994-12-07

Family

ID=15233268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61138922A Expired - Lifetime JPH0698300B2 (en) 1986-06-13 1986-06-13 Low temperature plasma processing equipment

Country Status (1)

Country Link
JP (1) JPH0698300B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021256826A1 (en) * 2020-06-17 2021-12-23 주식회사 엠나노 Method for manufacturing functional fiber

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021256826A1 (en) * 2020-06-17 2021-12-23 주식회사 엠나노 Method for manufacturing functional fiber

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