JPH069013Y2 - Vacuum deposition equipment - Google Patents

Description

【考案の詳細な説明】 （産業上の利用分野） この考案は、反転式の基板ホルダを備えている真空蒸着
装置に関し、蒸着対象の膜厚を均一化するための膜厚補
正手段の改良を図ったものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) The present invention relates to a vacuum vapor deposition apparatus provided with an inversion type substrate holder, and an improvement of a film thickness correction means for making the film thickness of a vapor deposition target uniform. It is intended.

（従来の技術） 板状の基板ホルダに一群の蒸着対象を支持し、基板ホル
ダを表裏反転させて、蒸着対象の表裏両面に蒸着を行う
形態の蒸着装置は、例えば特開昭６３−３０７２６０号
公報に公知である。この種の蒸着装置は、蒸着対象の基
板ホルダに対する装着位置の違いによって、蒸着膜厚に
若干の差が生じてしまう。例えば、基板ホルダの長手方
向の中央付近では膜厚が厚く、長手方向の両端付近では
膜厚が薄くなる。(Prior Art) A vapor deposition apparatus in which a group of vapor deposition targets is supported on a plate-shaped substrate holder and the substrate holders are turned upside down to perform vapor deposition on both front and back sides of the vapor deposition target is disclosed in, for example, Japanese Patent Laid-Open No. 63-307260. It is known in the official gazette. In this type of vapor deposition apparatus, a slight difference occurs in the vapor deposition film thickness due to the difference in the mounting position of the vapor deposition target substrate holder. For example, the film thickness is large near the center of the substrate holder in the longitudinal direction and thin near both ends in the longitudinal direction.

こうした膜厚のばらつきを解消するために、従来は、蒸
発源と基板ホルダとの間に膜厚補正手段を設け、この補
正手段で膜厚が厚くなる領域に向って飛翔する蒸着物質
を遮り、膜厚の均一化を図っていた。In order to eliminate such a variation in the film thickness, conventionally, a film thickness correction means is provided between the evaporation source and the substrate holder, and the evaporation material flying toward the region where the film thickness is increased is blocked by this correction means, The film thickness was made uniform.

（考案が解決しようとする課題） 膜厚のばらつきは、蒸着対象の表裏の表面形状の違いに
よっても生じる。例えば、光学レンズのように表裏が凸
弧面と凹弧面であったり、表裏で曲率が異なるような場
合等に、個々の蒸着対象で膜厚にばらつきを生じるので
ある。そのため、従来は、片面側の蒸着が終了した後膜
厚補正手段を交換し、残る片面側の蒸着を行っていた。(Problems to be solved by the invention) Variations in film thickness also occur due to differences in the surface shapes of the front and back surfaces of vapor deposition targets. For example, when the front and back surfaces are convex arc surfaces and concave arc surfaces such as an optical lens, or when the front and back surfaces have different curvatures, the film thickness varies among individual vapor deposition targets. Therefore, conventionally, after the vapor deposition on one side is completed, the film thickness correcting means is exchanged, and the vapor deposition on the remaining one side is performed.

しかし、膜厚補正手段の交換を行うには、真空室を開放
してその着脱等を行わねばならず、交換時に真空室内に
入り込む塵埃によって蒸着対象が汚損される不具合があ
った。また、膜厚補正手段の交換を行う間、蒸着対象を
停止しなければならず、その分だけ蒸着処理に要する時
間が長びく不利もあった。However, in order to replace the film thickness correction means, it is necessary to open the vacuum chamber and attach / detach the vacuum chamber, which causes a problem that the vapor deposition target is contaminated by dust entering the vacuum chamber at the time of replacement. In addition, the evaporation target must be stopped while the film thickness correcting means is replaced, which is disadvantageous in that the time required for the evaporation process is extended correspondingly.

この考案は上記に鑑み提案されたものであって、蒸着対
象の表裏の表面形状が異なる場合でも、表裏の蒸着処理
を膜厚にばらつきを生じることなく連続的に行えるよう
にし、塵埃の付着による膜品質の低下を解消するととも
に、蒸着装置の生産性を向上することを目的とする。This invention has been proposed in view of the above, and even if the surface shapes of the front and back of the vapor deposition target are different, it is possible to perform the vapor deposition processing on the front and back continuously without causing a variation in film thickness, and to prevent dust adhesion. It is an object to solve the deterioration of film quality and improve the productivity of the vapor deposition apparatus.

（課題を解決するための手段） この考案では、蒸発源と基板ホルダとの間の蒸発物質の
飛翔経路中に、基板ホルダにおける面方向の膜厚不整を
補正する第１膜厚補正手段と、蒸着対象の表裏の表面形
状の違いに基づく膜厚不整を補正する第２膜厚補正手段
とをそれぞれ配置し、両膜厚補正手段のそれぞれを、蒸
着物質の飛翔経路の一部を遮る使用姿勢と、蒸着物質の
飛翔を防げない不使用姿勢とに、姿勢切換自在に構成
し、蒸着対象の表裏の成膜を連続して行えるようにす
る。(Means for Solving the Problem) In the present invention, a first film thickness correcting means for correcting a film thickness irregularity in a surface direction of the substrate holder in a flight path of the evaporated material between the evaporation source and the substrate holder, Second film thickness correction means for correcting film thickness irregularity based on the difference in surface shape of the front and back surfaces of the vapor deposition target are arranged respectively, and both of the film thickness correction means are used to intercept a part of the flight path of the vapor deposition material. And a non-use posture in which the vapor deposition material cannot be prevented from flying, the posture can be switched so that the film formation on the front and back sides of the vapor deposition target can be continuously performed.

（作用） 第１膜厚補正手段で蒸発物質の飛翔経路の一部を遮って
蒸着を行うことにより、蒸着対象の例えば表面側の基板
ホルダを反転し、さらに、第２膜厚補正手段を使用姿勢
に切換えて蒸着を行うことにより、個々の蒸着対象にお
ける膜厚を均一化することができる。つまり、基板ホル
ダの反転姿勢に応じて、第１，第２の各膜厚補正手段を
択一的に使い分けることにより、蒸着対象の表裏の蒸着
を、膜厚にばらつきを生じることなく連続して行うこと
ができる。(Operation) The first film thickness correcting means blocks part of the flight path of the vaporized material to perform vapor deposition, thereby reversing the substrate holder, for example, on the front side of the vapor deposition target, and using the second film thickness correcting means. By changing the posture and performing vapor deposition, the film thickness of each vapor deposition target can be made uniform. That is, by selectively using each of the first and second film thickness correction means depending on the inverted posture of the substrate holder, the vapor deposition on the front and back of the vapor deposition target can be continuously performed without variations in the film thickness. It can be carried out.

（実施例） 第１図ないし第４図はこの考案の実施例を示す。(Embodiment) FIGS. 1 to 4 show an embodiment of the present invention.

第１図において、真空蒸着装置は電子ビーム蒸着方式に
よって蒸着を行うものであって、隔壁１で区画された真
空室２の内部に、反転式の基板ホルダ３の一群を配置
し、その下方に蒸発源４やシャッタ５を設けている。基
板ホルダの上方に設けられるヒータパネル、及び真空室
２内の空気を排出する掃気手段等の付帯設備は図示して
いない。In FIG. 1, the vacuum vapor deposition apparatus performs vapor deposition by an electron beam vapor deposition method, and a group of reversible substrate holders 3 is arranged inside a vacuum chamber 2 partitioned by a partition wall 1 and below the vacuum chamber 2. An evaporation source 4 and a shutter 5 are provided. The heater panel provided above the substrate holder and auxiliary equipment such as scavenging means for discharging the air in the vacuum chamber 2 are not shown.

一群の基板ホルダ３を周回駆動するためにベッド６を設
け、これをリングギヤ７を介して基台８で支持してい
る。基台８はリング状に形成されており、その周側面の
複数個所に設けた旋回ローラ９と、その上面の複数個所
に設けた規制ローラ１０を介して、リングギヤ７を回転
自在に支持している。リングギヤ７は、隔壁１の外面に
設けたモータ１１で、一組の伝動ギヤ１２，１３を介し
て回転駆動される。A bed 6 is provided for orbitally driving a group of substrate holders 3, and this is supported by a base 8 via a ring gear 7. The base 8 is formed in a ring shape, and rotatably supports the ring gear 7 via swiveling rollers 9 provided at a plurality of positions on the peripheral side surface thereof and regulating rollers 10 provided at a plurality of positions on the upper surface thereof. There is. The ring gear 7 is a motor 11 provided on the outer surface of the partition wall 1 and is rotationally driven via a pair of transmission gears 12 and 13.

ベッド６は、リングギヤ７に固定される下枠１５と、上
部中央の上枠１６とを有し、両枠１５，１６間に一群の
基板ホルダ３が上下反転自在に支持されている。基板ホ
ルダ３は、上枠１６に向って緩やかな上り傾斜姿勢で支
持されており、ベッド６が回転駆動されるとき、偏平な
円錐面に沿って周回移動する。この周回動作を利用して
基板ホルダ３を反転操作するために、基板ホルダ３の下
枠１５側の軸端に十文字状のアーム１７を固定し、さら
に、このアーム１７と対向する壁面にアーム操作具１８
を設けている。アーム操作具１８は、ソレノイドの先端
にロッド１９を固定したものであり、ロッド１９をアー
ム１７の周回軌跡内に突出することにより、第１図に示
すように基板ホルダ３を９０度ずつ回転変位させる。つ
まり、ロッド１９を突出した状態で、リングギヤ７を２
回転させると、基板ホルダ３を１８０度反転操作でき
る。The bed 6 has a lower frame 15 fixed to the ring gear 7, and an upper frame 16 at the upper center, and a group of substrate holders 3 are supported between the frames 15 and 16 so as to be vertically inverted. The substrate holder 3 is supported in a gentle upward inclination posture toward the upper frame 16, and when the bed 6 is rotationally driven, it moves circularly along a flat conical surface. In order to invert the substrate holder 3 using this orbiting operation, a cross-shaped arm 17 is fixed to the shaft end on the lower frame 15 side of the substrate holder 3, and the arm operation is performed on the wall surface facing the arm 17. Tool 18
Is provided. The arm operation tool 18 has a rod 19 fixed to the tip of a solenoid. By projecting the rod 19 into the orbit of the arm 17, the substrate holder 3 is rotationally displaced by 90 degrees as shown in FIG. Let That is, with the rod 19 protruding, the ring gear 7
When rotated, the substrate holder 3 can be inverted by 180 degrees.

基板ホルダ３は花弁形の板状体からなり、第３図に示す
ように、その板面に形成した装着穴２１に蒸着対象２２
を嵌め込み、押え板２３で挟み固定して、一群の蒸着対
象２２を保持している。蒸着対象２２は、表裏両面に蒸
着膜が形成される部材、例えば光学レンズや理科学用鏡
であるが、半導体ウェーハのように、片面に限って蒸着
を行うものであってもよい。但し、この場合は、基板ホ
ルダ３の表裏のそれぞれに蒸着対象２２を装着する。The substrate holder 3 is made of a petal-shaped plate, and as shown in FIG. 3, a vapor deposition target 22 is placed in a mounting hole 21 formed in the plate surface.
, And is clamped and fixed by a holding plate 23 to hold a group of vapor deposition targets 22. The vapor deposition target 22 is a member on which vapor deposition films are formed on both front and back surfaces, for example, an optical lens or a mirror for science and science, but the vapor deposition target 22 may be one on which vapor deposition is performed only on one surface. However, in this case, the vapor deposition target 22 is attached to each of the front and back of the substrate holder 3.

この考案は、上記のような真空蒸着装置において、膜厚
のばらつきを補正する第１・第２の膜厚補正手段２５，
２６を、蒸発物質の飛翔経路中に設ける点に特徴を有す
る。The present invention is directed to the first and second film thickness correction means 25 for correcting variations in film thickness in the above vacuum vapor deposition apparatus.
The feature is that 26 is provided in the flight path of the evaporation material.

既に説明したように、基板ホルダ３は偏平な円錐面に沿
って、緩やかに傾斜した姿勢で周回移動し、この間に成
膜が行われる。しかし、各蒸着対象２２における膜厚
は、基板ホルダ３にどの部分に蒸着対象２２が装着され
ているかでばらつきを生じる。こうした、基板ホルダ３
における面方向の膜厚不整を補正するために、第１膜厚
補正手段２５が設けられている。As described above, the substrate holder 3 orbits along the flat conical surface in a gently inclined posture, during which film formation is performed. However, the film thickness of each vapor deposition target 22 varies depending on where the vapor deposition target 22 is attached to the substrate holder 3. Such a substrate holder 3
A first film thickness correction unit 25 is provided to correct the film thickness irregularity in the plane direction of the.

また、第２膜厚補正手段２６は、第３図及び第４図に示
すように、基板ホルダ３を反転操作したときの、蒸着対
象２２の表裏の表面形状の違いに基づく膜厚不整を補正
するために設けられている。Further, the second film thickness correcting means 26, as shown in FIGS. 3 and 4, corrects the film thickness irregularity due to the difference in surface shape between the front surface and the back surface of the vapor deposition target 22 when the substrate holder 3 is inverted. It is provided to do so.

両補正手段２５，２６は、それぞれ隔壁１を内外に貫通
するケース２７と、このケース２７に回転自在に支持さ
れる軸２８と、軸２８の内突端に固定される補正体２
９、及びケース２９の外端に設けられる操作部材３０な
どで構成されており、それぞれの補正体２９，２９が蒸
着物質の飛翔経路を遮る傾斜姿勢で、正対状に配置され
ている。第２図に示すように、両補正手段２５，２６
は、蒸発源４に対して左右対称位置に設けられている。Each of the correction means 25 and 26 includes a case 27 that penetrates the partition wall 1 in and out, a shaft 28 rotatably supported by the case 27, and a correction body 2 fixed to an inner projecting end of the shaft 28.
9 and an operation member 30 provided on the outer end of the case 29, and the respective correctors 29, 29 are arranged in a face-to-face manner in an inclined posture that obstructs the flight path of the vapor deposition material. As shown in FIG. 2, both correction means 25, 26
Are provided symmetrically with respect to the evaporation source 4.

各補正手段２５，２６の補正体２９，２９は、スタンレ
ス板材を細長い木の葉形状に形成したものであるが、そ
れぞれの補正目的に対応して外形形状が異ならせてあ
る。場合によっては、板面に通口を開口し、あるいは網
体を付加するなどの微調整が施される。The correction bodies 29, 29 of the correction means 25, 26 are made of stanless plate material in the shape of an elongated tree leaf, but have different outer shapes according to the respective correction purposes. Depending on the case, fine adjustment such as opening a through hole in the plate surface or adding a net body is performed.

両補正体２９を基板ホルダ３の反転姿勢に対応して、使
用姿勢と不使用姿勢に切換え操作するために操作部材３
０が設けられている。操作部材３０は、手動用のハンド
ル、あるいは軸２８を９０度ずつ回転操作するモータ等
のアクチュエータのいずれであってもよく、双方を備え
ていてもよい。The operation member 3 is provided to switch both the correction bodies 29 between the use posture and the non-use posture corresponding to the inverted posture of the substrate holder 3.
0 is provided. The operating member 30 may be either a manual handle or an actuator such as a motor that rotates the shaft 28 by 90 degrees, or may include both.

次に両膜厚補正手段２５，２６の使用態様を説明する。Next, a usage mode of the both film thickness correcting means 25 and 26 will be described.

例えば、第３図に示すように蒸着対象２２の凹弧面側を
蒸着するとき、第１膜厚補正手段２５の補正体２９を使
用姿勢に切換えて、その板面が蒸着物質の飛翔経路の一
部を遮るようにする。このとき、第２膜厚補正手段２６
は、第１図に示すようにその補正体２９が飛翔方向と平
行となって蒸着物質の飛翔を防げない不使用に切換えて
おく。この状態で、一群の基板ホルダ３を周回させなが
ら成膜を行う。For example, as shown in FIG. 3, when the concave arc surface side of the vapor deposition target 22 is vapor-deposited, the correction body 29 of the first film thickness correction means 25 is switched to the use posture, and the plate surface is the flight path of the vapor deposition material. Try to block some. At this time, the second film thickness correction means 26
As shown in FIG. 1, the correction body 29 is switched to the non-use state in which the correction body 29 becomes parallel to the flight direction and the flight of the vapor deposition material cannot be prevented. In this state, film formation is performed while rotating a group of substrate holders 3.

凹弧面側の膜厚が所定値に達したら、シャッタ５を水平
回動させて蒸発源４の上方を覆い、蒸発物質の供給を一
時停止する。次いでアーム操作具１８によって基板ホル
ダ３を反転操作し、同時に第１膜厚補正手段２５を不使
用姿勢に切換え操作するとともに、第２膜厚補正手段２
６を使用姿勢に切換える。この状態でシャッタ５を元の
待機位置に戻し、再び蒸着物質を供給して、凸弧面側の
成膜を行う。When the film thickness on the concave arc surface side reaches a predetermined value, the shutter 5 is horizontally rotated to cover the upper side of the evaporation source 4, and the supply of the evaporated substance is temporarily stopped. Next, the arm operation tool 18 is used to invert the substrate holder 3, and at the same time, the first film thickness correcting means 25 is switched to the non-use posture and the second film thickness correcting means 2 is operated.
Switch 6 to use position. In this state, the shutter 5 is returned to the original standby position, the vapor deposition material is supplied again, and film formation on the convex arc surface side is performed.

以上のようにした真空蒸着装置によれば、蒸着対象２２
の表裏両面に均一厚みの蒸着膜を形成できる。また、第
１，第２の各膜厚補正手段２５，２６を切換えて表裏に
応じた膜厚補正を行うことにより、表裏の成膜を連続し
て行うことができる。また、成膜開始から成膜終了ま
で、真空室２内を密閉状態のまま維持できるので、塵埃
等による膜面の汚損等も解消できる。According to the vacuum vapor deposition apparatus as described above, the vapor deposition target 22
A vapor-deposited film having a uniform thickness can be formed on both the front and back surfaces of. Further, by switching between the first and second film thickness correcting means 25 and 26 and performing film thickness correction according to the front and back, film formation on the front and back can be performed continuously. Further, since the inside of the vacuum chamber 2 can be maintained in a hermetically closed state from the start of film formation to the end of film formation, the film surface can be prevented from being contaminated by dust or the like.

（変形例） 上記の実施例では、補正体２９が軸２８の回りに回転す
ることで姿勢切換えを行うようにしたが、その必要はな
い。例えば、軸２８の軸中心に沿って補正体２９を進退
移動させ、その姿勢切換えを行うこともできる。また、
シャッタ５と同様に、不使用姿勢において補正体２９が
蒸着物質の飛翔領域から完全に退避するようにすること
もできる。(Modification) In the above embodiment, the posture change is performed by rotating the correction body 29 around the shaft 28, but this is not necessary. For example, the posture can be switched by moving the correction body 29 forward and backward along the axis of the shaft 28. Also,
Similar to the shutter 5, the correction body 29 may be completely retracted from the flight area of the vapor deposition material in the non-use posture.

補正体２９の形状は、蒸着物質の飛翔特性や蒸着対象の
表面形状、あるいは基板ホルダ３の傾斜度合等に応じて
決定すべきであるので、その外形形状は実施例で説明し
た形状には限定しない。また、補正体２９はルーバー構
造や格子構造等の板状以外の構造とすることもできる。Since the shape of the correction body 29 should be determined according to the flight characteristics of the vapor deposition material, the surface shape of the vapor deposition target, the degree of inclination of the substrate holder 3, etc., its outer shape is limited to the shape described in the embodiment. do not do. Further, the correction body 29 may have a structure other than a plate shape such as a louver structure or a lattice structure.

（考案の効果） 以上説明したように、この考案では、蒸着物質の飛翔経
路中に第１，第２の膜厚補正手段を設け、両補正手段を
基板ホルダの反転姿勢に応じて使用姿勢と不使用姿勢と
に切換え使用できるようにしたので、蒸着物質の表裏に
ばらつきのない均一厚みの蒸着膜を形成でき、しかも表
裏の成膜を連続して行うことができる。これにより、従
来装置において不可欠であった膜厚補正手段の交換作業
を省略することができ、その分だけ蒸着装置の稼動率を
向上し、生産性を向上できることとなった。また、前記
交換作業時に、外部から空気と共に入り込んだ塵埃で蒸
着対象が汚損されることを解消して、膜品質を高品位に
保つことができ、表裏の膜厚を均一化できることと相俟
って、蒸着対象の品質を向上できる点で有利である。(Effects of the Invention) As described above, in the present invention, the first and second film thickness correcting means are provided in the flight path of the vapor deposition material, and both correcting means are used depending on the inversion attitude of the substrate holder. Since it can be used by switching to a non-use posture, it is possible to form a vapor deposition film having a uniform thickness on the front and back of the vapor deposition material and to continuously form the front and back. As a result, the work of replacing the film thickness correcting means, which is indispensable in the conventional apparatus, can be omitted, and the operating rate of the vapor deposition apparatus can be improved and the productivity can be improved accordingly. In addition, it is possible to prevent the deposition target from being contaminated by dust that has entered together with air from the outside during the replacement work, keep the film quality high, and make the front and back film thickness uniform. Therefore, it is advantageous in that the quality of the vapor deposition target can be improved.

【図面の簡単な説明】[Brief description of drawings]

第１図ないし第４図はこの考案の実施例を示し、第１図
は真空蒸着装置の概略縦断面図、第２図は第１図におけ
るＢ−Ｂ線断面図、第３図は蒸着対象とその取付構造を
示す断面図、第４図は基板ホルダを反転した状態の第３
図と同等の断面図である。 ２……真空室、３……基板ホルダ、４……蒸発源、２２
……蒸着対象、２５……第１膜厚補正手段、２６……第
２膜厚補正手段。1 to 4 show an embodiment of the present invention, FIG. 1 is a schematic vertical sectional view of a vacuum vapor deposition apparatus, FIG. 2 is a sectional view taken along the line BB in FIG. 1, and FIG. FIG. 4 is a sectional view showing the mounting structure and the mounting structure, and FIG.
It is a sectional view equivalent to a figure. 2 ... vacuum chamber, 3 ... substrate holder, 4 ... evaporation source, 22
...... Evaporation target, 25 ...... First film thickness correcting means, 26 ...... Second film thickness correcting means

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項１】真空室の内部に蒸発源と、蒸着対象を保持
する一群の基板ホルダとを有し、基板ホルダを偏平な円
錘面に沿って回転駆動し、かつ基板ホルダの表裏を反転
して蒸着対象の表裏に蒸着膜を形成する反転式の真空蒸
着装置であって、 蒸発源と基板ホルダとの間の蒸発物質の飛翔経路中に、 基板ホルダにおける面方向の膜厚不整を補正する第１膜
厚補正手段と、 蒸着対象の表裏の表面形状の違いに基づく膜厚不整を補
正する第２膜厚補正手段とをそれぞれ配置し、 両膜厚補正手段のそれぞれが、蒸着物質の飛翔経路の一
部を遮る使用姿勢と、蒸着物質の飛翔を妨げない不使用
姿勢とに、姿勢切換自在に構成されている真空蒸着装
置。1. A vacuum chamber having an evaporation source and a group of substrate holders for holding an object to be vapor-deposited, the substrate holders being rotationally driven along a flat conical surface, and the front and back sides of the substrate holders being reversed. This is a reversal type vacuum evaporation system that forms evaporation films on the front and back sides of the evaporation target, and corrects the film thickness irregularity in the surface direction of the substrate holder during the flight path of the evaporation material between the evaporation source and the substrate holder. And a second film thickness correcting means for correcting film thickness irregularity due to a difference in surface shape between the front surface and the back surface of the vapor deposition target, respectively. A vacuum vapor deposition device that is configured so that it can be switched between a use posture that blocks a part of the flight path and a non-use posture that does not hinder the flight of the vapor deposition material.