JPH0689691A - Ion implanting device - Google Patents
Ion implanting deviceInfo
- Publication number
- JPH0689691A JPH0689691A JP23967992A JP23967992A JPH0689691A JP H0689691 A JPH0689691 A JP H0689691A JP 23967992 A JP23967992 A JP 23967992A JP 23967992 A JP23967992 A JP 23967992A JP H0689691 A JPH0689691 A JP H0689691A
- Authority
- JP
- Japan
- Prior art keywords
- power source
- voltage
- electrode
- voltage power
- ion implanting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electron Sources, Ion Sources (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、イオン打ち込み装置の
加速電圧電源構成に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an acceleration voltage power supply structure for an ion implantation device.
【０００２】[0002]
【従来の技術】従来、イオン打ち込み装置の加速電圧電
源は整流器で構成されて成るのが通例であった。図２は
従来技術の一例を示すイオン打ち込み装置のブロック図
である。すなわち、石英などから成る反応容器２１には
ボロンや燐などのイオン打ち込み種を結合したジボラン
やホスフィンなどのガス導入口２２および真空引き口２
３が設けられると共に、電極を兼ねた支持基板２４が設
けられ、該支持基板２４上にはシリコンウエーハなどの
試料２５が設置されるように成っている。さらに、前記
反応容器２１には外部から高周波電極２６が設けられて
成り、該高周波電極２６には高周波電源２７と結線され
て成り、前記ボロンや燐などのイオン打ち込み種を結合
したジボランやホスフィンなどのガスのプラズマ２８を
形成すると共に、前記反応容器２１内に設けた白金など
から成る電極２９と電極を兼ねた支持基板２４との間
に、バッテリーを直列に結線した数キロボルトから数メ
ガボルトの直流高電圧電源３０とイオン打ち込み量を検
知するための電流計３２とを直列に結線されて成ると共
に加速電圧を検知するための電圧計２４が並列に結線さ
れて成る。なお、磁石３１は所要の質量数のイオン種の
みを選別する為に設けられている。さすれば、前記プラ
ズマ２８のイオン３３には直流高電圧電源１０からの加
速電圧の印加により前記試料２５の表面から０．１ミク
ロンから数ミクロンの深さまでイオン打ち込みが数１０
分でドーズ量１０15／ｃｍ2程度まで行うことができ
る。2. Description of the Related Art Conventionally, an accelerating voltage power source for an ion implantation apparatus has usually been composed of a rectifier. FIG. 2 is a block diagram of an ion implantation apparatus showing an example of a conventional technique. That is, a reaction vessel 21 made of quartz or the like is provided with a gas introduction port 22 such as diborane or phosphine or the like and an evacuation port 2 to which an ion implantation species such as boron or phosphorus is bonded.
3, a support substrate 24 also serving as an electrode is provided, and a sample 25 such as a silicon wafer is placed on the support substrate 24. Further, the reaction vessel 21 is provided with a high-frequency electrode 26 from the outside, and the high-frequency electrode 26 is connected to a high-frequency power source 27, such as diborane or phosphine having an ion-implanted species such as boron or phosphorus bonded thereto. DC gas of several kilovolts to several megavolts in which a battery is connected in series between the electrode 29 made of platinum or the like provided in the reaction vessel 21 and the supporting substrate 24 also serving as the electrode while forming the plasma 28 of the gas. A high voltage power supply 30 and an ammeter 32 for detecting the ion implantation amount are connected in series, and a voltmeter 24 for detecting an acceleration voltage is connected in parallel. The magnet 31 is provided to select only ion species having a required mass number. Then, the ions 33 of the plasma 28 are ion-implanted from the surface of the sample 25 to a depth of 0.1 to several microns by applying an accelerating voltage from the DC high voltage power source 10 to several tens.
The dose can be up to about 10 15 / cm 2 in minutes.
【０００３】[0003]
【発明が解決しようとする課題】しかし、上記従来技術
によると、イオン打ち込み装置の加速電圧電源が大型と
なり、コストもかさむという課題があった。However, according to the above-mentioned conventional technique, there is a problem that the accelerating voltage power source of the ion implantation device becomes large and the cost is high.
【０００４】本発明は、かかる従来技術の課題を解決
し、小型で低コストのイオン打ち込み装置の加速電圧電
源を提供することを目的とする。An object of the present invention is to solve the problems of the prior art and to provide a compact and low-cost accelerating voltage power source for an ion implantation apparatus.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決し、上記
目的を達成するために、本発明はイオン打ち込み装置に
関し、（１）プラズマに、直流高電圧上に交流低電圧を
のせた電圧を印加する手段をとること、および（２）前
記直流高電圧電源をエレクトレットで構成する手段をと
ること、などの手段をとる。In order to solve the above problems and to achieve the above objects, the present invention relates to an ion implantation apparatus, which comprises: (1) a voltage obtained by applying an AC low voltage on a DC high voltage The means for applying the voltage and (2) the means for configuring the DC high-voltage power supply with an electret are used.
【０００６】[0006]
【実施例】以下、実施例により本発明を詳述する。EXAMPLES The present invention will be described in detail below with reference to examples.
【０００７】図１は本発明の一実施例を示すイオン打ち
込み装置のブロック図である。すなわち、石英などから
成る反応容器１にはボロンや燐などのイオン打ち込み種
を結合したジボランやホスフィンなどのガス導入口２お
よび真空引き口３が設けられると共に、電極を兼ねた支
持基板４が設けられ、該支持基板４上にはシリコンウエ
ーハなどの試料５が設置されるように成っている。さら
に、前記反応容器１には外部から高周波電極６が設けら
れて成り、該高周波電極６には高周波電源７と結線され
て成り、前記ボロンや燐などのイオン打ち込み種を結合
したジボランやホスフィンなどのガスのプラズマ８を形
成すると共に、前記反応容器１内に設けた白金などから
成る電極９と電極を兼ねた支持基板４との間に、エレク
トレットやバッテリーを直列に結線した１０キロボルト
から数メガボルトの直流高電圧電源１０と１キロヘルツ
から２キロヘルツで１キロボルト程度のパルスを発生す
る交流低電圧電源１１およびイオン打ち込み量を検知す
るための電流計１２とを直列に結線されて成り、直流高
電圧上に交流低電圧をのせた電圧を印加する。なお、オ
ッシロスコープ１４は電極９と電極を兼ねた支持基板４
との間の印加電圧波形を検知するべく設けられて成る。
さすれば、前記プラズマ８のイオン１３には交流低電圧
電源１１からのエネルギー供給と直流高電圧電源１０か
らの加速電圧の印加により前記試料５の表面から０．１
ミクロンから数ミクロンの深さまでイオン打ち込みが１
分でドーズ量１０15／ｃｍ2程度まで容易に行うことが
できる。本発明の直流高電圧電源１０と交流低電圧電源
１１とは、従来の整流器による高電圧直流加速電源に比
較して、桁ちがいに小型化できると共に、格段のコスト
ダウンを図ることができる。FIG. 1 is a block diagram of an ion implantation apparatus showing an embodiment of the present invention. That is, a reaction vessel 1 made of quartz or the like is provided with a gas inlet 2 and a vacuum outlet 3 such as diborane or phosphine to which an ion-implanting species such as boron or phosphorus is bonded, and a supporting substrate 4 also serving as an electrode. A sample 5 such as a silicon wafer is placed on the supporting substrate 4. Further, the reaction vessel 1 is provided with a high-frequency electrode 6 from the outside, and the high-frequency electrode 6 is connected to a high-frequency power source 7. The ion-implanted species such as boron or phosphorus is combined with diborane or phosphine. Gas plasma 8 is formed, and an electret or battery is connected in series between the electrode 9 made of platinum or the like provided in the reaction vessel 1 and the supporting substrate 4 which also serves as an electrode. DC high voltage power supply 10 and an AC low voltage power supply 11 for generating a pulse of about 1 kilovolt from 1 kHz to 2 kHz and an ammeter 12 for detecting the amount of ion implantation are connected in series. Apply a voltage with an AC low voltage on top. The oscilloscope 14 is a support substrate 4 that also serves as an electrode 9 and an electrode.
It is provided to detect the waveform of the applied voltage between and.
Then, by supplying energy from the AC low voltage power source 11 and applying an acceleration voltage from the DC high voltage power source 10 to the ions 13 of the plasma 8, 0.1 from the surface of the sample 5 is obtained.
1 ion implantation from micron to several microns deep
The dose can be easily increased to about 10 15 / cm 2 in minutes. The DC high-voltage power supply 10 and the AC low-voltage power supply 11 of the present invention can be significantly reduced in size as compared with the conventional high-voltage DC acceleration power supply using the rectifier, and the cost can be significantly reduced.
【０００８】なお、通常のイオン打ち込み装置の電源の
みを本発明の直流高電圧上に交流低電圧をのせた電圧を
印加する電源に取り替えてもよく、この場合でも電源の
小型化と低コスト化によりイオン打ち込み装置の小型化
と低コスト化を図ることができることは云うまでもな
い。It should be noted that only the power source of the ordinary ion implantation apparatus may be replaced with the power source for applying a voltage obtained by placing an AC low voltage on the DC high voltage of the present invention. Even in this case, the power source is downsized and the cost is reduced. It goes without saying that the ion implantation apparatus can be downsized and the cost can be reduced.
【０００９】さらに、エレクトレットとしてはカルナバ
ワックスの他ポリ弗化ピリニデンなどの他、正または負
の単極性エレクトレットの積層板や、セラミック系無機
質エレクトレット等を用いても良い事は言うまでもな
い。Further, as the electret, it is needless to say that in addition to carnauba wax, polypyridinyl fluoride, etc., a laminated plate of positive or negative unipolar electret, a ceramic inorganic electret, etc. may be used.
【００１０】さらに、イオン打ち込み種ガスとして、ジ
ボランやホスフィンの他、アルシンやスチベン等を用い
ても良く、水素化合物の他ハロゲン化物であっても良
く、半導体の導電型決定不純物の化合物ガスのみなら
ず、表面処理としてイオン打ち込みを施す場合には弗化
タングステンや塩化チタニュウム等その他の金属化合物
ガスを用いる事ができる事も言うまでもない。Further, as the ion-implanting seed gas, diborane, phosphine, arsine, stibene, etc. may be used, and halogen compounds as well as hydrogen compounds may be used. Of course, when ion implantation is performed as the surface treatment, it is needless to say that other metal compound gas such as tungsten fluoride or titanium chloride can be used.
【００１１】[0011]
【発明の効果】本発明により、小型で低コストのイオン
打ち込み装置を提供することができる効果があると共に
高速で大量のイオン打ち込みが可能となる効果もある。According to the present invention, there is an effect that it is possible to provide a small-sized and low-cost ion implanting apparatus and an effect that a large amount of ion implantation can be performed at high speed.
【図１】本発明の一実施例を示すイオン打ち込み装置の
ブロック図である。FIG. 1 is a block diagram of an ion implantation apparatus showing an embodiment of the present invention.
【図２】従来技術の一例を示すイオン打ち込み装置のブ
ロック図である。FIG. 2 is a block diagram of an ion implantation apparatus showing an example of a conventional technique.
１，２１・・・反応容器 ２，２２・・・ガス導入口 ３，２３・・・真空引き口 ４，２４・・・支持基板 ５，２５・・・試料 ６，２６・・・高周波電極 ７，２７・・・高周波電源 ８，２８・・・プラズマ ９，２９・・・電極 １０，３０・・・直流高電圧電源 １１・・・交流低電圧電源 １２，３２・・・電流計 １３，３３・・・イオン １４・・・オッシロスコープ ３１・・・磁石 ３４・・・電圧計 1, 21 ... Reaction container 2, 22 ... Gas inlet 3, 23 ... Vacuum outlet 4, 24 ... Support substrate 5, 25 ... Sample 6, 26 ... High frequency electrode 7 , 27 ... High frequency power source 8, 28 ... Plasma 9, 29 ... Electrode 10, 30 ... DC high voltage power source 11 ... AC low voltage power source 12, 32 ... Ammeter 13, 33 ... ion 14 ... oscilloscope 31 ... magnet 34 ... voltmeter
Claims (2)
のせた電圧を印加することを特徴とするイオン打ち込み
装置。1. An ion implanting device characterized in that a voltage obtained by applying a low AC voltage on a high DC voltage is applied to plasma.
たことを特徴とする請求項１記載のイオン打ち込み装
置。2. The ion implanter according to claim 1, wherein the DC high-voltage power supply is composed of an electret.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23967992A JPH0689691A (en) | 1992-09-08 | 1992-09-08 | Ion implanting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23967992A JPH0689691A (en) | 1992-09-08 | 1992-09-08 | Ion implanting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0689691A true JPH0689691A (en) | 1994-03-29 |
Family
ID=17048301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23967992A Pending JPH0689691A (en) | 1992-09-08 | 1992-09-08 | Ion implanting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0689691A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1987006686A1 (en) * | 1986-04-25 | 1987-11-05 | Sumitomo Heavy Industries, Ltd. | Counterflow heat exchanger with floating plate |
| JPH09115836A (en) * | 1995-09-29 | 1997-05-02 | Hyundai Electron Ind Co Ltd | Thin film vapor deposition apparatus |
| KR101026161B1 (en) * | 2008-12-17 | 2011-04-05 | 한국원자력연구원 | A power supply for an ion implanter |
-
1992
- 1992-09-08 JP JP23967992A patent/JPH0689691A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1987006686A1 (en) * | 1986-04-25 | 1987-11-05 | Sumitomo Heavy Industries, Ltd. | Counterflow heat exchanger with floating plate |
| JPH09115836A (en) * | 1995-09-29 | 1997-05-02 | Hyundai Electron Ind Co Ltd | Thin film vapor deposition apparatus |
| US5948167A (en) * | 1995-09-29 | 1999-09-07 | Hyundai Electronics Industries Co., Ltd. | Thin film deposition apparatus |
| KR101026161B1 (en) * | 2008-12-17 | 2011-04-05 | 한국원자력연구원 | A power supply for an ion implanter |
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