JPH0684144A - Magnetoresistance-effect type magnetic head - Google Patents
Magnetoresistance-effect type magnetic headInfo
- Publication number
- JPH0684144A JPH0684144A JP25586592A JP25586592A JPH0684144A JP H0684144 A JPH0684144 A JP H0684144A JP 25586592 A JP25586592 A JP 25586592A JP 25586592 A JP25586592 A JP 25586592A JP H0684144 A JPH0684144 A JP H0684144A
- Authority
- JP
- Japan
- Prior art keywords
- film
- films
- anisotropy
- shield
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、磁気記録媒体に記録さ
れた磁化情報を再生する磁気抵抗効果型磁気ヘッドに関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect magnetic head for reproducing magnetization information recorded on a magnetic recording medium.
【０００２】[0002]
【従来の技術】従来より、磁気テープ、磁気ディスク等
の磁気記録媒体の情報を再生するためのヘッドとして磁
気抵抗効果型磁気ヘッド（以下「ＭＲヘッド」とい
う。）が知られている。ＭＲヘッドは、磁界に対する感
度が高いため高密度記録における再生用ヘッドとして注
目されている。ＭＲヘッドが良好な再生特性を得るため
には、ＭＲ素子を磁気的にシールドすることが有効であ
る。図１にシールドタイプのＭＲヘッドの概略図を示
す。同図において、符号１はセラミック基板、符号２は
ＭＲ素子膜、符号３はバイアス導体膜、符号４ａは下シ
ールド膜、符号４ｂは上シールド膜、符号５は絶縁体で
あり、符号６は記録媒体である。同図に示したようにＭ
Ｒ素子膜２を上下シールド膜４ｂ，４ａで挟むことによ
り、記録媒体６からの不要な磁界を遮蔽し、再生分解能
を向上することができる。一般に、磁気シールド膜には
高透磁率の軟磁性薄膜が用いられる。また、この磁気シ
ールド膜４ａ，４ｂには、図２中矢印Ａで示すように、
磁化容易軸が記録媒体６と平行になるように一軸異方性
が付与される。一軸異方性を付与することにより、シー
ルド膜４ａ，４ｂ内では磁化容易軸と垂直に記録媒体６
の信号磁束が導かれることになり、高周波における磁化
過程が回転モードになる。従って、磁区の急激な変化に
よるバルクハウゼンノイズや再生波形の乱れ等を抑える
ことができる。軟磁性シールド膜に異方性を付与する方
法としては、蒸着、スパッタリング等で薄膜を形成する
際に、均一磁界中で成膜を行う方法、また成膜後、均一
磁界中でアニール処理を行うことにより所定の方向に異
方性をつける方法がある。また、特開昭６２−３３４１
３では、シールドに信号磁束と直交する方向に溝を形成
し、その後、アニール処理によって異方性をつける方法
が開示されている。2. Description of the Related Art Conventionally, a magnetoresistive head (hereinafter referred to as "MR head") is known as a head for reproducing information from a magnetic recording medium such as a magnetic tape or a magnetic disk. Since the MR head has high sensitivity to a magnetic field, it has been attracting attention as a reproducing head for high density recording. In order for the MR head to obtain good reproduction characteristics, it is effective to magnetically shield the MR element. FIG. 1 shows a schematic view of a shield type MR head. In the figure, reference numeral 1 is a ceramic substrate, reference numeral 2 is an MR element film, reference numeral 3 is a bias conductor film, reference numeral 4a is a lower shield film, reference numeral 4b is an upper shield film, reference numeral 5 is an insulator, and reference numeral 6 is recording. It is a medium. As shown in the figure, M
By sandwiching the R element film 2 between the upper and lower shield films 4b and 4a, it is possible to shield an unnecessary magnetic field from the recording medium 6 and improve the reproduction resolution. Generally, a soft magnetic thin film having a high magnetic permeability is used for the magnetic shield film. Further, as shown by the arrow A in FIG.
Uniaxial anisotropy is imparted so that the easy axis of magnetization is parallel to the recording medium 6. By imparting uniaxial anisotropy, the recording medium 6 is perpendicular to the easy axis of magnetization in the shield films 4a and 4b.
The signal magnetic flux of will be guided, and the magnetization process at high frequency will be in the rotation mode. Therefore, it is possible to suppress Barkhausen noise, disturbance of reproduced waveform, and the like due to abrupt changes of magnetic domains. As a method for imparting anisotropy to the soft magnetic shield film, when forming a thin film by vapor deposition, sputtering, etc., a method of forming a film in a uniform magnetic field, or an annealing treatment in a uniform magnetic field after film formation Therefore, there is a method of giving anisotropy in a predetermined direction. Also, JP-A-62-3341
3 discloses a method in which a groove is formed in a shield in a direction orthogonal to a signal magnetic flux, and then anisotropy is given by an annealing treatment.
【０００３】[0003]
【発明が解決しようとする課題】シールド膜に異方性を
付与するために従来行われている上記した磁場中成膜や
成膜後の磁場中アニールでは、製造上バラツキを生じる
可能性がある。これは、印加される磁場の分布が基板面
内で不均一なことに由来しており、結果としてヘッドの
バラツキとして現れる。また、特開昭６２−３３４１３
に開示された方法では、バラツキは改善されるものの工
程数が増える点や、今後のヘッドの微小化に対応するの
が困難である等の問題があった。The above-mentioned film formation in a magnetic field or annealing in a magnetic field after the film formation that has been conventionally performed to impart anisotropy to a shield film may cause variations in manufacturing. . This is because the distribution of the applied magnetic field is non-uniform in the plane of the substrate, and as a result, it appears as variations in the head. Also, JP-A-62-33413
However, the method disclosed in (1) has problems that the number of steps is increased, but it is difficult to cope with future miniaturization of the head, although the variation is improved.
【０００４】[0004]
【課題を解決するための手段】本発明は、上記問題点に
鑑みなされたものであり、「磁気抵抗効果素子の両側に
シールドが配置された構造の磁気抵抗効果型磁気ヘッド
において、該シールドが軟磁性膜と反強磁性膜の２層
膜、又は該２層膜の積層膜よりなることを特徴とする磁
気抵抗効果型磁気ヘッド。」を提供するものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems. In a magnetoresistive head having a structure in which shields are arranged on both sides of a magnetoresistive element, the shield is A magnetoresistive effect magnetic head comprising a two-layer film of a soft magnetic film and an antiferromagnetic film, or a laminated film of the two-layer film. "
【０００５】[0005]
【作用】本発明の磁気抵抗効果型磁気ヘッドは、磁気抵
抗効果素子の両側に配置されるシールド膜が軟磁性膜と
反強磁性膜の２層によって構成されるか、又はこれらの
２層膜を更に積層して構成されるものであるため軟磁性
膜と反強磁性膜が磁気的結合をする事により、シールド
膜に一軸異方性が付与されて良好な特性を有する磁気抵
抗効果型磁気ヘッドを得ることができるものである。反
強磁性膜は、それ自体強い磁性を示さないが、反強磁性
膜の最表面層のスピンと軟磁性膜のスピンとの交換相互
作用により、異方性を制御することができる。この方法
の利点は形状的な効果を利用せず、成膜時の条件だけで
異方性を制御でき、作製が容易な点にある。 また、反
強磁性膜で異方性を制御するため、成膜時の磁界のバラ
ツキも大きな影響を与えない。但し、その磁気的結合は
軟磁性膜の膜厚に依存し、膜厚が１００ｎｍを超えると
効果が小さくなってしまう。従って、シールド膜の膜厚
がそれ以上必要な場合は、軟磁性膜／反強磁性膜を積層
して軟磁性膜が必要な厚さになるようにする必要があ
る。In the magnetoresistive effect type magnetic head of the present invention, the shield film disposed on both sides of the magnetoresistive effect element is composed of two layers of a soft magnetic film and an antiferromagnetic film, or these two layer films. Since the soft magnetic film and the antiferromagnetic film are magnetically coupled to each other, the uniaxial anisotropy is imparted to the shield film and the magnetoresistive effect type magnetic film having good characteristics is formed. The head can be obtained. The antiferromagnetic film itself does not exhibit strong magnetism, but the anisotropy can be controlled by the exchange interaction between the spin of the outermost surface layer of the antiferromagnetic film and the spin of the soft magnetic film. The advantage of this method is that the anisotropy can be controlled only by the conditions at the time of film formation, without utilizing the shape effect, and the manufacturing is easy. Moreover, since the anisotropy is controlled by the antiferromagnetic film, variations in the magnetic field during film formation do not have a great influence. However, the magnetic coupling depends on the film thickness of the soft magnetic film, and if the film thickness exceeds 100 nm, the effect becomes small. Therefore, when the shield film needs to have a larger film thickness, it is necessary to stack the soft magnetic film / antiferromagnetic film so that the soft magnetic film has the required thickness.
【０００６】[0006]
【実施例】以下、図面を参照して本発明の実施例につい
て説明する。図３は、本発明の第１実施例である磁気抵
抗効果型磁気ヘッドの断面を示す図である。ヘッドの基
本構成は図１で示したものとほぼ同様であり、対応する
部分には同一の符号を付して説明する。本実施例の構成
が図１の従来例のＭＲヘッドの構成と異なる点は、下シ
ールド膜４ａ、上シールド膜４ｂがそれぞれ軟磁性膜４
ｃと反強磁性膜４ｄとからなる２層膜を積層して構成さ
れている点である。このヘッドの作製方法は、以下の工
程により行う。 セラミック基板１上に絶縁膜（ＴｉＯ2 又はＳｉＯ
2 ）５を成膜する。 絶縁膜５上に下シールド膜４ａを形成する。下シール
ド膜４ａの形成方法は、まず、磁場中で高透磁率の軟磁
性材料（例えばパーマロイ）４ｃをスパッタリング又は
真空蒸着で５０ｎｍ成膜する。このときの磁場の強さ
は、８〜１６×１０3 Ａ／ｍ、その方向は一軸異方性を
付与したい方向に向ける。その後、同一装置内で反強磁
性膜（例えばＦｅＭｎ）４ｄを２０ｎｍ成膜する。この
工程を繰り返し、軟磁性膜／反強磁性膜の積層構造を作
り、軟磁性膜の合計膜厚が５００ｎｍの厚さになるよう
にシールド膜厚を設定する。 下シールド膜４ａ上に絶縁膜（ＴｉＯ2 又はＳｉ
Ｏ2）５を成膜する。 絶縁膜５上にパターンニングされたＭＲ素子膜（パー
マロイ）２を成膜する。 ＭＲ素子膜２上に更に絶縁膜（ＴｉＯ2 又はＳｉ
Ｏ2）５を成膜する。 絶縁膜５上にパターンニングされたバイアス導体膜３
を成膜する。 導体膜３上に更に絶縁膜（ＴｉＯ2 又はＳｉＯ2）５
を成膜する。 絶縁膜５上にと同様の方法で上シールド膜４ｂを形
成する。 以上の各薄膜の成膜は、上下のシールド膜４ａ，４ｂと
同様にスパッタリング又は真空蒸着によって行うことが
できる。Embodiments of the present invention will be described below with reference to the drawings. FIG. 3 is a diagram showing a cross section of the magnetoresistive effect magnetic head according to the first embodiment of the present invention. The basic structure of the head is almost the same as that shown in FIG. 1, and corresponding parts will be described with the same reference numerals. The structure of this embodiment is different from the structure of the MR head of the conventional example shown in FIG. 1 in that the lower shield film 4a and the upper shield film 4b are respectively formed of the soft magnetic film 4.
It is a point that it is configured by laminating a two-layer film composed of c and the antiferromagnetic film 4d. This head is manufactured by the following steps. An insulating film (TiO 2 or SiO 2) is formed on the ceramic substrate 1.
2 ) Form 5 The lower shield film 4a is formed on the insulating film 5. In the method of forming the lower shield film 4a, first, a soft magnetic material (for example, permalloy) 4c having a high magnetic permeability in a magnetic field is formed to a thickness of 50 nm by sputtering or vacuum evaporation. The strength of the magnetic field at this time is 8 to 16 × 10 3 A / m, and the direction is directed to the direction in which uniaxial anisotropy is desired. After that, an antiferromagnetic film (for example, FeMn) 4d having a thickness of 20 nm is formed in the same apparatus. This process is repeated to form a laminated structure of the soft magnetic film / antiferromagnetic film, and the shield film thickness is set so that the total film thickness of the soft magnetic film is 500 nm. An insulating film (TiO 2 or Si) is formed on the lower shield film 4a.
O 2 ) 5 is deposited. A patterned MR element film (permalloy) 2 is formed on the insulating film 5. An insulating film (TiO 2 or Si) is further formed on the MR element film 2.
O 2 ) 5 is deposited. Bias conductor film 3 patterned on insulating film 5
To form a film. An insulating film (TiO 2 or SiO 2 ) 5 is further formed on the conductor film 3.
To form a film. The upper shield film 4b is formed on the insulating film 5 by the same method. The above-mentioned thin films can be formed by sputtering or vacuum evaporation similarly to the upper and lower shield films 4a and 4b.
【０００７】図４は、本願発明の第２実施例であり、本
願出願人が先に特願平２−３２７１８９において提案し
たＭＲヘッドに適用した例である。このＭＲヘッドの上
下シールド膜４ｂ，４ａは、ＭＲ素子膜２の中間部に対
向する部分においてＭＲ素子膜２との間隔が広く設定さ
れ、媒体対向面においてＭＲ素子膜２に近接し、更に媒
体対向面から離れたＭＲ素子膜２の後方部分においてＭ
Ｒ素子膜２に近接するように構成されている。このよう
な形状に構成されたＭＲヘッドでは、ＭＲ素子膜２に効
果的に磁束を導入できるため、シールド膜の磁気的な特
性はより重要となる。同図のように、軟磁性膜４ｃと反
強磁性膜４ｄからなる２層膜を積層して下シールド膜４
ａ、上シールド膜４ｂを構成することにより、バラツキ
が少なく一軸異方性をシールド膜に付与することができ
る。このようにして作製されたＭＲヘッドで磁気記録媒
体の再生を行うと、歪みが少なく、分解能の高い再生波
形を得ることができる。FIG. 4 shows a second embodiment of the present invention, which is an example applied to the MR head proposed by the applicant of the present invention in Japanese Patent Application No. 2-327189. The upper and lower shield films 4b and 4a of the MR head are set to have a large distance from the MR element film 2 in a portion facing the middle portion of the MR element film 2, and are close to the MR element film 2 on the medium facing surface, and In the rear part of the MR element film 2 away from the facing surface, M
It is configured to be close to the R element film 2. In the MR head having such a shape, the magnetic flux can be effectively introduced into the MR element film 2, so that the magnetic characteristics of the shield film become more important. As shown in the figure, the two layers of the soft magnetic film 4c and the antiferromagnetic film 4d are stacked to form the lower shield film 4
By configuring the a and the upper shield film 4b, it is possible to impart uniaxial anisotropy to the shield film with little variation. When the magnetic recording medium is reproduced with the MR head manufactured in this way, a reproduced waveform with little distortion and high resolution can be obtained.
【０００８】[0008]
【発明の効果】本発明の磁気抵抗効果型磁気ヘッドはシ
ールド膜に磁気的な結合で異方性が付与されるため、作
製工程が比較的簡易であり、しかも一軸異方性のバラツ
キが少ないＭＲヘッドを得ることができるものである。In the magnetoresistive head of the present invention, the shield film is provided with anisotropy by magnetic coupling, so that the manufacturing process is relatively simple and the uniaxial anisotropy has little variation. The MR head can be obtained.
【図１】従来のシールド付きＭＲヘッドの構成を示す概
略断面図。FIG. 1 is a schematic sectional view showing the structure of a conventional shielded MR head.
【図２】媒体とシールド膜に付与される一軸異方性の関
係を示す説明図。FIG. 2 is an explanatory view showing a relationship of uniaxial anisotropy given to a medium and a shield film.
【図３】本発明の第１の実施例のＭＲヘッドの構成を示
す断面図。FIG. 3 is a sectional view showing the structure of the MR head of the first embodiment of the present invention.
【図４】本発明の第２の実施例のＭＲヘッドの構成を示
す断面図。FIG. 4 is a sectional view showing the structure of an MR head according to a second embodiment of the present invention.
１ セラミック基板 ２ ＭＲ素子膜 ３ バイアス導体膜 ４ａ 下シールド膜 ４ｂ 上シールド膜 ４ｃ 軟磁性膜 ４ｄ 反強磁性膜 ５ 絶縁体 ６ 記録媒体 1 Ceramic Substrate 2 MR Element Film 3 Bias Conductor Film 4a Lower Shield Film 4b Upper Shield Film 4c Soft Magnetic Film 4d Antiferromagnetic Film 5 Insulator 6 Recording Medium
Claims (1)
された構造の磁気抵抗効果型磁気ヘッドにおいて、 該シールドが軟磁性膜と反強磁性膜の２層膜、又は該２
層膜の積層膜よりなることを特徴とする磁気抵抗効果型
磁気ヘッド。1. A magnetoresistive effect magnetic head having a structure in which shields are arranged on both sides of a magnetoresistive effect element, wherein the shield comprises a two-layer film of a soft magnetic film and an antiferromagnetic film, or
A magnetoresistive effect magnetic head comprising a laminated film of layer films.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25586592A JPH0684144A (en) | 1992-08-31 | 1992-08-31 | Magnetoresistance-effect type magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25586592A JPH0684144A (en) | 1992-08-31 | 1992-08-31 | Magnetoresistance-effect type magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0684144A true JPH0684144A (en) | 1994-03-25 |
Family
ID=17284659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25586592A Pending JPH0684144A (en) | 1992-08-31 | 1992-08-31 | Magnetoresistance-effect type magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0684144A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6275360B1 (en) * | 1997-09-29 | 2001-08-14 | Hitachi, Ltd. | Read-write head |
| US6731474B2 (en) * | 2000-11-27 | 2004-05-04 | Tdk Corporation | Thin film magnetic head and method of manufacturing the same |
| US6801409B2 (en) * | 2000-09-19 | 2004-10-05 | Seagate Technology Llc | Read head shield having improved stability |
| US7606007B2 (en) | 2006-02-17 | 2009-10-20 | Hitachi Global Storage Technologies Netherlands B.V. | Shield stabilization for magnetoresistive sensors |
| US20120087045A1 (en) * | 2010-10-08 | 2012-04-12 | Tdk Corporation | Thin film magnetic head including spin-valve film with free layer magnetically connected with shield |
| US20120087046A1 (en) * | 2010-10-08 | 2012-04-12 | Tdk Corporation | Thin film magnetic head including soft layer magnetically connected with shield |
-
1992
- 1992-08-31 JP JP25586592A patent/JPH0684144A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6275360B1 (en) * | 1997-09-29 | 2001-08-14 | Hitachi, Ltd. | Read-write head |
| US6801409B2 (en) * | 2000-09-19 | 2004-10-05 | Seagate Technology Llc | Read head shield having improved stability |
| US6731474B2 (en) * | 2000-11-27 | 2004-05-04 | Tdk Corporation | Thin film magnetic head and method of manufacturing the same |
| US7606007B2 (en) | 2006-02-17 | 2009-10-20 | Hitachi Global Storage Technologies Netherlands B.V. | Shield stabilization for magnetoresistive sensors |
| US20120087045A1 (en) * | 2010-10-08 | 2012-04-12 | Tdk Corporation | Thin film magnetic head including spin-valve film with free layer magnetically connected with shield |
| US20120087046A1 (en) * | 2010-10-08 | 2012-04-12 | Tdk Corporation | Thin film magnetic head including soft layer magnetically connected with shield |
| US8437106B2 (en) * | 2010-10-08 | 2013-05-07 | Tdk Corporation | Thin film magnetic head including spin-valve film with free layer magnetically connected with shield |
| US8462467B2 (en) * | 2010-10-08 | 2013-06-11 | Tdk Corporation | Thin film magnetic head including soft layer magnetically connected with shield |
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