JPH0679160A - Gas supply system of semiconductor device - Google Patents
Gas supply system of semiconductor deviceInfo
- Publication number
- JPH0679160A JPH0679160A JP23670592A JP23670592A JPH0679160A JP H0679160 A JPH0679160 A JP H0679160A JP 23670592 A JP23670592 A JP 23670592A JP 23670592 A JP23670592 A JP 23670592A JP H0679160 A JPH0679160 A JP H0679160A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- temperature
- supply system
- semiconductor device
- gas supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置のガス供給シ
ステムに関し、特に腐食性液化ガスを半導体製造装置へ
供給するガス供給システムに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas supply system for semiconductor devices, and more particularly to a gas supply system for supplying corrosive liquefied gas to semiconductor manufacturing equipment.
【０００２】[0002]
【従来の技術】従来の半導体装置のガス供給システム
は、図３の構成図に示すように液化ガスを充填したガス
ボンベ１と、圧力調整器２と、１次側バルブ３ａと、２
次側バルブ３ｂと、それらを供給するガス配管４とを有
している。2. Description of the Related Art A conventional gas supply system for a semiconductor device has a gas cylinder 1 filled with a liquefied gas, a pressure regulator 2, a primary valve 3a, and 2 as shown in the block diagram of FIG.
It has a secondary valve 3b and a gas pipe 4 for supplying them.
【０００３】[0003]
【発明が解決しようとする課題】従来の半導体装置のガ
ス供給システムを用いて腐食性液化ガスを供給する場
合、ガス配管の周囲の雰囲気の変化により、ガス配管の
上流側にある構成パーツの温度より下流側の構成パーツ
の温度が低くなった場合、その下流側の部位でガスが液
化し、構成パーツを腐食劣化させるという問題点があっ
た。When a corrosive liquefied gas is supplied using a conventional gas supply system for a semiconductor device, the temperature of constituent parts upstream of the gas pipe changes due to changes in the atmosphere around the gas pipe. When the temperature of the component parts on the more downstream side becomes lower, there is a problem that the gas is liquefied at the part on the downstream side and the component parts are corroded and deteriorated.
【０００４】[0004]
【課題を解決するための手段】本発明の半導体装置のガ
ス供給システムは、腐食性液化ガスを充填したガスボン
ベから半導体製造装置へ至るガス配管の途中の要所の温
度を計測できる温度センサーを有し、各要所温度のモニ
ターあるいは温度コントロールを行うシステムである。A gas supply system for a semiconductor device according to the present invention has a temperature sensor capable of measuring the temperature of a key point in the middle of a gas pipe from a gas cylinder filled with a corrosive liquefied gas to a semiconductor manufacturing device. However, it is a system that monitors the temperature of each key point or controls the temperature.
【０００５】[0005]
【実施例】次に本発明について図面を参照して説明す
る。図１は本発明の実施例１のガス供給システムの構成
図である。液化ガスはガスボンベ１内でその時点での蒸
気圧でガスとなり、ガス配管４、１次側バルブ３ａを通
り圧力調整器２で必要圧力に減圧され、ガス配管４、２
次側バルブ３ｂを通して半導体製造装置へ供給される。The present invention will be described below with reference to the drawings. 1 is a configuration diagram of a gas supply system according to a first embodiment of the present invention. The liquefied gas becomes a gas with the vapor pressure at that time in the gas cylinder 1, passes through the gas pipe 4, the primary valve 3a, and is reduced in pressure to a required pressure by the pressure regulator 2.
It is supplied to the semiconductor manufacturing apparatus through the secondary valve 3b.
【０００６】温度センサー５は、ボンベ１と、圧力調整
器２の直前の配管及び直後の配管と、２次側バルブ３ｂ
の直後の配管の４個所に取りつけ、さらに温度比較器６
に接続して入力し、各温度センサー５が上流側の温度よ
り低くならないかをモニターする。温度が下った場合は
警報を出し、その時点で温度低下となった要因の改善を
促し、ガス供給システムヘダメージを与えないようにす
る。The temperature sensor 5 includes a cylinder 1, a pipe immediately before and after the pressure regulator 2, and a pipe immediately after the secondary valve 3b.
Installed at 4 points on the pipe immediately after, and the temperature comparator 6
The temperature sensor 5 monitors whether each temperature sensor 5 becomes lower than the temperature on the upstream side. When the temperature drops, an alarm is issued to prompt improvement of the cause of the temperature drop at that point and prevent damage to the gas supply system.
【０００７】次に実施例２を図２を用いて説明する。本
実施例の構成は、実施例１のガス配管４にヒーター７を
取り付け、温度センサー５からの信号により温度制御を
行なう。ヒーター７毎に温度センサー５が接続され、さ
らに温度制御コントローラー８に接続された構成になっ
ており、それぞれ独立で制御する。設定温度は下流側よ
り上流側の温度を高く設定する事によりガスの液化を防
止する。Next, a second embodiment will be described with reference to FIG. In the configuration of this embodiment, the heater 7 is attached to the gas pipe 4 of the first embodiment, and the temperature is controlled by the signal from the temperature sensor 5. A temperature sensor 5 is connected to each heater 7, and is further connected to a temperature control controller 8, which are independently controlled. The preset temperature is set higher on the upstream side than on the downstream side to prevent liquefaction of gas.
【０００８】[0008]
【発明の効果】以上説明したように本発明は、半導体装
置のガス供給システムのガス配管経路に温度センサーを
取り付けた事により、ガス配管温度をモニターでき、腐
食性液化ガスの温度下降によるガス配管内の液化を温度
比較器等を付加する事により未然に検知できるという効
果を有する。As described above, according to the present invention, the temperature of the gas pipe can be monitored by installing the temperature sensor in the gas pipe path of the gas supply system of the semiconductor device, and the gas pipe due to the temperature decrease of the corrosive liquefied gas can be obtained. It is possible to detect the liquefaction in the interior by adding a temperature comparator or the like.
【図１】本発明の実施例１の構成図である。FIG. 1 is a configuration diagram of a first embodiment of the present invention.
【図２】本発明の実施例２の構成図である。FIG. 2 is a configuration diagram of a second embodiment of the present invention.
【図３】従来の半導体装置のガス供給システムの構成図
である。FIG. 3 is a configuration diagram of a conventional gas supply system for a semiconductor device.
１ ガスボンベ ２ 圧力調整器 ３ａ １次側バルブ ３ｂ ２次側バルブ ４ ガス配管 ５ 温度センサー ６ 温度比較器 ７ ヒーター 1 Gas cylinder 2 Pressure regulator 3a Primary valve 3b Secondary valve 4 Gas pipe 5 Temperature sensor 6 Temperature comparator 7 Heater
Claims (1)
ら半導体製造装置へ至るガス配管の途中に、圧力調整器
とバルブとを有する半導体装置のガス供給システムにお
いて、前記ガス配管途中の要所の温度を計測できる温度
センサーを有する事を特徴とする半導体装置のガス供給
システム。1. In a gas supply system for a semiconductor device, which has a pressure regulator and a valve in the middle of a gas pipe from a gas cylinder filled with a corrosive liquefied gas to a semiconductor manufacturing device, a temperature of a point in the middle of the gas pipe. A gas supply system for a semiconductor device having a temperature sensor capable of measuring the temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23670592A JPH0679160A (en) | 1992-09-04 | 1992-09-04 | Gas supply system of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23670592A JPH0679160A (en) | 1992-09-04 | 1992-09-04 | Gas supply system of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0679160A true JPH0679160A (en) | 1994-03-22 |
Family
ID=17004547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23670592A Pending JPH0679160A (en) | 1992-09-04 | 1992-09-04 | Gas supply system of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0679160A (en) |
-
1992
- 1992-09-04 JP JP23670592A patent/JPH0679160A/en active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19990525 |