JPH0677669B2 - Exhaust gas treatment method and apparatus - Google Patents
Exhaust gas treatment method and apparatusInfo
- Publication number
- JPH0677669B2 JPH0677669B2 JP2252762A JP25276290A JPH0677669B2 JP H0677669 B2 JPH0677669 B2 JP H0677669B2 JP 2252762 A JP2252762 A JP 2252762A JP 25276290 A JP25276290 A JP 25276290A JP H0677669 B2 JPH0677669 B2 JP H0677669B2
- Authority
- JP
- Japan
- Prior art keywords
- exhaust gas
- cleaning liquid
- cleaning
- pipe
- jet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Separation Of Particles Using Liquids (AREA)
- Treating Waste Gases (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は、SiH2Cl2,SiCl4,SiF4,SiH4などハロゲンを含
む珪素化合物やHCl,HF,Cl2などの酸分を含む排ガスをト
ラブルなく高効率で処理するための排ガスの処理方法と
その装置の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention includes a halogen-containing silicon compound such as SiH 2 Cl 2 , SiCl 4 , SiF 4 and SiH 4 and an acid component such as HCl, HF and Cl 2. The present invention relates to an exhaust gas treatment method and an apparatus therefor for treating exhaust gas with high efficiency and without trouble.
(従来技術とその問題点) 現在、排ガス処理装置には充填式スクラバや多孔板式ス
クラバなどが用いられていたが、SiH2Cl2,SiCl4,SiF4,S
iH4など珪素化合物を含む排ガスを処理した場合大量の
粉塵が発生し、且つ、洗浄液と排ガスが気−液接触して
化学反応による粘稠物を生成して装置を目詰りさせ、洗
浄回数を増やしたり複数の装置を設置してバッチ式に使
用しなければならないなど、保守に非常に手間と費用が
かかるという欠点があった。そこで、第5図のようなジ
ェット式スクラバを採用して前記排ガスの処理を行わせ
たのであるが、目詰まりの問題は解消したものの排ガス
導入管(14′)の内周や洗浄液噴射ノズル(16′)に粉
塵や粘稠物質が堆積して排ガス導入口(3′)や洗浄液
噴射ノズル(16′)を閉塞するという問題が新たに発生
した。これは、天井部の高圧噴出ノズル(2′)からの
高速高圧洗浄液の噴射により洗浄室(4′)の内部が負
圧になり、前記高速高圧洗浄液(1′)の飛まつと洗浄
液噴出ノズル(16′)から噴射された洗浄水(C′)と
が導入された排ガスと接触して反応を起こし、それが前
記突出箇所に堆積したためである。(Prior art and its problems) At present, a filling type scrubber or a perforated plate type scrubber is used for an exhaust gas treatment device, but SiH 2 Cl 2 , SiCl 4 , SiF 4 , S
When exhaust gas containing silicon compounds such as iH 4 is treated, a large amount of dust is generated, and the cleaning liquid and exhaust gas come into gas-liquid contact to form a viscous substance due to a chemical reaction that clogs the equipment and reduces the number of cleanings. There is a drawback in that maintenance is very troublesome and expensive, such as increasing the number or installing a plurality of devices for batch use. Therefore, a jet type scrubber as shown in FIG. 5 was adopted to treat the exhaust gas, but although the problem of clogging was solved, the inner circumference of the exhaust gas introduction pipe (14 ') and the cleaning liquid injection nozzle ( A new problem has arisen that dust and viscous substances are deposited on 16 ') and block the exhaust gas inlet (3') and the cleaning liquid injection nozzle (16 '). This is because the inside of the cleaning chamber (4 ') becomes a negative pressure due to the injection of the high-speed high-pressure cleaning liquid from the high-pressure ejection nozzle (2') on the ceiling, and the spray of the high-speed high-pressure cleaning liquid (1 ') and the cleaning liquid ejection nozzle. This is because the cleaning water (C ') injected from (16') comes into contact with the introduced exhaust gas to cause a reaction, and it is deposited on the protruding portion.
(発明の目的) 本発明はかかる従来例に鑑みて為されたもので、その目
的とするところは、SiH2Cl2,SiCl4,SiF4,SiH4などハロ
ゲンを含む珪素化合物やHCl,HF,Cl2などの酸分を含み、
アルカリ洗浄液にて処理を行うと大量の粉塵や粘稠物を
生成して処理装置に目詰りを生ずるような排ガスの処理
を連続に処理出来る排ガス処理方法とその装置を提供す
るにある。(Object of the Invention) The present invention has been made in view of the above-mentioned conventional examples, and an object thereof is to provide a halogen-containing silicon compound such as SiH 2 Cl 2 , SiCl 4 , SiF 4 , SiH 4 or HCl, HF. , Including acid such as Cl 2
It is an object of the present invention to provide an exhaust gas treatment method and apparatus capable of continuously treating exhaust gas such that a large amount of dust or a viscous substance is generated when the treatment is performed with an alkaline cleaning liquid and the treatment apparatus is clogged.
(問題点を解決するための手段) 本発明方法の第1は、上記問題点を解決するために、請
求項(1)に示すように、 高圧でアルカリ洗浄液(C)を噴出させて細かい水滴
の高速ジェット噴霧(1)を形成する高圧噴出ノズル
(2)を天井部に有し、 SiH2Cl2,SiCl4,SiF4,SiH4などハロゲンを含む珪素化
合物やHCl,HF,Cl2などの酸分を含む未処理排ガスの排ガ
ス導入口(3)を側面に有するジェットスクラバ型の排
ガス処理装置の洗浄室(4)において、 前記排ガス導入口(3)に下り傾斜に接続された排ガ
ス導入管(20)に洗浄液(C)が螺旋流となって流下さ
せるようにした。(Means for Solving Problems) In order to solve the above-mentioned problems, the first method of the present invention, as described in claim (1), ejects an alkaline cleaning liquid (C) at high pressure to form fine water droplets. Has a high-pressure jet nozzle (2) that forms a high-speed jet spray of (1) in the ceiling, and silicon compounds containing halogen such as SiH 2 Cl 2 , SiCl 4 , SiF 4 , SiH 4 and HCl, HF, Cl 2 etc. In a cleaning room (4) of a jet scrubber type exhaust gas treatment device having on its side an exhaust gas introduction port (3) of untreated exhaust gas containing acid content of the exhaust gas, the exhaust gas introduction connected to the exhaust gas introduction port (3) in a downward slope The washing liquid (C) was made to flow down into the pipe (20) in a spiral flow.
;と言う技術的手段を採用しており、 第2の方法は請求項(2)に示すように、 洗浄液(C)が間欠的にその方向を変えて排ガス導入
管(3)内を螺旋流となって流下させるようにしたもの
である。The second method is, as described in claim (2), that the cleaning liquid (C) changes its direction intermittently and spirally flows in the exhaust gas introducing pipe (3). It was made to flow down.
又、前記第1の方法を達成するために、請求項(3)に
いて、 高圧でアルカリ洗浄液(C)を噴出させて細かい水滴
の高速ジェット噴霧を形成する高圧噴出ノズル(2)を
天井部に有し、 SiH2Cl2,SiCl4,SiF4,SiH4などハロゲンを含む珪素化
合物やHCl,HF,Cl2などの酸分を含む未処理排ガスの排ガ
ス導入口(3)を側面に有するジェットスクラバ型の排
ガス処理装置の洗浄室(4)において、 前記排ガス導入口(3)に接続された排ガス導入管
(3)を前記洗浄室(4)に向けて下り傾斜に配設する
と共に排ガス導入管(14)の側面に洗浄液噴出管(20)
を周方向に接続する。Further, in order to achieve the first method, according to claim (3), the high pressure jet nozzle (2) for jetting the alkaline cleaning liquid (C) at a high pressure to form a high speed jet spray of fine water droplets is provided at the ceiling part. And has an exhaust gas inlet (3) on the side of untreated exhaust gas containing halogenated silicon compounds such as SiH 2 Cl 2 , SiCl 4 , SiF 4 and SiH 4 and acid components such as HCl, HF and Cl 2. In a cleaning chamber (4) of a jet scrubber type exhaust gas treatment device, an exhaust gas introducing pipe (3) connected to the exhaust gas introducing port (3) is arranged in a downward slope toward the cleaning chamber (4) and the exhaust gas is discharged. Cleaning liquid jet pipe (20) on the side of the introduction pipe (14)
Are connected in the circumferential direction.
:と言う技術的手段を採用しており、 第2の方法を達成するために請求項(4)で、 請求項(3)の排ガス処理装置(A)において、 排ガス導入管(14)の側面に、その接続方向が周方向
において互いに逆となるように洗浄液噴出管(20a)(2
0b)を接続する。In order to achieve the second method, the side surface of the exhaust gas introduction pipe (14) in the exhaust gas treatment device (A) according to claim (3) is adopted. In addition, the cleaning liquid ejection pipes (20a) (2
0b) is connected.
:と言う技術的手段を採用している。: The technical means is adopted.
(作用) 以上のような構成であるので、本発明の第1方法では、
排ガス導入管(14)の内周面が螺旋洗浄液(C)で洗い
流される事になり、排ガス導入管(14)の内周面に粉塵
が堆積するような事がない。(Operation) Since the configuration is as described above, in the first method of the present invention,
The inner peripheral surface of the exhaust gas introducing pipe (14) will be washed away by the spiral cleaning liquid (C), and dust will not be accumulated on the inner peripheral surface of the exhaust gas introducing pipe (14).
又、本発明の第2方法では、洗浄液(C)が間欠的にそ
の方向を変えて螺旋流となって流下するので、一方向の
螺旋流では取れにくい堆積粉塵も逆方向の螺旋流によっ
て洗い流される事になり、より高い洗浄効果を得る事が
出来るものである。Further, in the second method of the present invention, since the cleaning liquid (C) intermittently changes its direction and flows down as a spiral flow, accumulated dust that is difficult to be removed by the spiral flow in one direction is also washed away by the spiral flow in the opposite direction. Therefore, it is possible to obtain a higher cleaning effect.
又、本発明装置(A)では、洗浄室(4)に向けて下り
傾斜に配設された排ガス導入管(14)の側面に洗浄液噴
出管(20)を周方向に接続してあるので、排ガス導入管
(14)の内周面に粉塵の堆積原因となる洗浄液噴出ノズ
ル(16′)のような突起物がなく、排ガス導入管(14)
の内周面に付着しようとする粉塵が螺旋流によって洗い
流されてしまうものであり、排ガス導入管(14)の側面
に、その接続方向が周方向において互いに逆となるよう
に洗浄液噴出管(20a)(20b)を接続した場合には、互
いに逆方向の螺旋流を流下させる事が出来るものであ
る。Further, in the device (A) of the present invention, since the cleaning liquid ejection pipe (20) is connected in the circumferential direction to the side surface of the exhaust gas introduction pipe (14) arranged in a downward slope toward the cleaning chamber (4), There is no protrusion such as the cleaning liquid jet nozzle (16 ') that causes dust accumulation on the inner peripheral surface of the exhaust gas introduction pipe (14), and the exhaust gas introduction pipe (14)
The dust that tends to adhere to the inner peripheral surface of the exhaust pipe is washed away by the spiral flow, and the cleaning liquid ejection pipe (20a) is provided on the side surface of the exhaust gas introduction pipe (14) so that the connection directions thereof are opposite to each other in the peripheral direction. ) (20b) is connected, it is possible to flow down the spiral flow in opposite directions.
(実施例) 以下、本発明を図示実施例に従って詳述する。(Examples) Hereinafter, the present invention will be described in detail with reference to illustrated examples.
ジェットスクラバ本体(A)は最上段の洗浄室(4)と
それに続くスロート部(5)並びにスロート部(5)に
続くスカート部(6)とで構成されている。洗浄室
(4)は円筒状でその天井面には高圧で洗浄液(C)を
噴出させて細かい水滴の高速ジェット噴霧(1)を形成
する高圧噴出ノズル(2)が垂設されており、洗浄室
(4)の側面には未処理排ガス導入口(3)が開設され
ている。高圧噴出ノズル(2)のスプレー圧力は1〜5k
g/cm2(3kg/cm2が最適である。)程度とし、高圧噴出ノ
ズル(2)から噴射された高速ジェット噴霧によって形
成される排ガス導入孔の入り口で吸引力−30mmAq〜−50
mmAq程度となる。又、その液ガス比=L/Gは3〜100kg/k
gである。The jet scrubber body (A) is composed of an uppermost washing chamber (4), a throat portion (5) following the washing chamber (4), and a skirt portion (6) following the throat portion (5). The washing chamber (4) has a cylindrical shape, and a high-pressure jet nozzle (2) for jetting the washing liquid (C) at a high pressure to form a high-speed jet spray of fine water droplets (1) is vertically installed on the ceiling surface of the washing chamber (4). An untreated exhaust gas inlet (3) is opened on the side surface of the chamber (4). High pressure jet nozzle (2) spray pressure is 1-5k
g / cm 2 (3 kg / cm 2 is most suitable), and suction force at the entrance of the exhaust gas introduction hole formed by the high-speed jet spray injected from the high-pressure jet nozzle (2) −30 mmAq to −50
It is about mmAq. Also, the liquid gas ratio = L / G is 3 to 100 kg / k
It is g.
未処理排ガス導入口(3)には排ガス導入管(14)が下
り傾斜に接続されており、更にその排ガス導入管(14)
には洗浄ノズル(16)が設置されている。洗浄液噴出管
(20)は、第2図に示すように排ガス導入管(14)の周
方向に1本だけ設置されている場合と、第3,4図に示す
ように排ガス導入管(14)の周方向に対称に2本設置さ
れている場合とがある。後者の洗浄液噴出管の番号は、
枝番を付して(20a)(20b)とする。いずれの場合でも
洗浄液(C)が螺旋流となって排ガス導入管(14)内を
洗浄しながら流下する。ただし、第3,4図の場合は、第
2図の場合と異なり、洗浄液噴出管(20a)(20b)は間
欠的に切替わり、一定時間が経過すると螺旋洗浄液
(C)の流れが逆転して洗浄室(4)に流れ込む。An exhaust gas introducing pipe (14) is connected to the untreated exhaust gas introducing port (3) in a downward slope, and further the exhaust gas introducing pipe (14)
A washing nozzle (16) is installed in the. As shown in FIG. 2, only one cleaning liquid jet pipe (20) is installed in the circumferential direction of the exhaust gas introduction pipe (14), and as shown in FIGS. 3 and 4, the exhaust gas introduction pipe (14). In some cases, two of them are installed symmetrically in the circumferential direction. The number of the latter cleaning liquid ejection pipe is
Add branch numbers (20a) and (20b). In any case, the cleaning liquid (C) becomes a spiral flow and flows down while cleaning the inside of the exhaust gas introduction pipe (14). However, in the case of FIGS. 3 and 4, unlike the case of FIG. 2, the cleaning liquid ejection pipes (20a) (20b) are switched intermittently, and the flow of the spiral cleaning liquid (C) is reversed after a certain period of time. Flow into the washing room (4).
洗浄室(4)の下面開口に続けて設けられているスロー
ト部(5)は、洗浄室(4)より小断面積となってい
る。尚、洗浄室(4)の下部はスロート部(5)に円滑
に流れ込むように朝顔状に形成されている。スロート部
(5)に続けて次第にその断面積を増加するスカート部
(6)が設けられている。ジェットスクラバ本体(A)
の下方にはスカート部(6)に接続せる液受槽(B)が
設置されており、洗浄液(C)が入っている。ジェット
スクラバ本体(A)の反対側にて液受槽(B)の上方に
ミスト除去装置(7)が設置されている。ミスト除去装
置(7)の内部には排ガスの流れに有効な角度で折り曲
げられた邪魔板層(17)が設置されており、天井面には
大気放出口(18)が開設されている。液受槽(B)には
その他洗浄液供給管(19)や循環ポンプ(8)が設置さ
れており、循環ポンプ(8)は高圧噴出ノズル(2)や
ミスト除去装置(7)の洗浄装置(9)に接続されてい
る。更に、液受槽(B)には内部に溜った洗浄液(C)
を適宜オーバーフローさせ、オーバーフローした洗浄液
(C)を瀘過する瀘過装置(図示せず。)も設置されて
いる。The throat portion (5) provided following the opening of the lower surface of the cleaning chamber (4) has a smaller cross-sectional area than the cleaning chamber (4). The lower portion of the cleaning chamber (4) is formed in a morning glory shape so as to smoothly flow into the throat portion (5). Following the throat portion (5), there is provided a skirt portion (6) whose cross-sectional area gradually increases. Jet scrubber body (A)
A liquid receiving tank (B) that can be connected to the skirt portion (6) is installed below, and contains a cleaning liquid (C). A mist removing device (7) is installed above the liquid receiving tank (B) on the opposite side of the jet scrubber body (A). Inside the mist removing device (7), a baffle layer (17) bent at an angle effective for the flow of exhaust gas is installed, and an air outlet (18) is opened on the ceiling surface. The cleaning liquid supply pipe (19) and the circulation pump (8) are installed in the liquid receiving tank (B), and the circulation pump (8) is a cleaning device (9) for the high pressure jet nozzle (2) and the mist removing device (7). )It is connected to the. Furthermore, the cleaning liquid (C) accumulated inside the liquid receiving tank (B)
A filtration device (not shown) for appropriately overflowing the cleaning liquid (C) that has overflowed is also installed.
製造装置から排出され、本発明で処理される排ガスは、
SiH2Cl2,SiCl4,SiF4,SiH4などハロゲンを含む珪素化合
物やHCl,HF,Cl2などの酸分を含む半導体排ガスやガラス
溶解工程からの排ガスなどがあり、更にその他、例え
ば、高炉排ガス、キュポラ排ガス、焼却炉排ガス、キル
ン排ガスなど粉塵(10)を大量に含むものも対象とされ
る。The exhaust gas discharged from the manufacturing equipment and treated by the present invention is
SiH 2 Cl 2, SiCl 4, SiF 4, SiH 4 silicon compound containing halogen or the like HCl, HF, include exhaust gas from the semiconductor exhaust gas or glass melting processes, including acid content, such as Cl 2, further other, for example, Blast furnace exhaust gas, cupola exhaust gas, incinerator exhaust gas, kiln exhaust gas, and other substances that contain a large amount of dust (10) are also targeted.
排ガス処理用の洗浄液(C)は、水酸化カリウムや水酸
化ナトリウムなどのアルカリ成分を含む水溶液である。
このアルカリ洗浄液(C)はアルカリ濃度0.1%〜15%
でpH9〜14のものを使用するものである。アルカリ濃度
は未処理排ガスの種類によって適宜選定される。The cleaning liquid (C) for treating exhaust gas is an aqueous solution containing an alkaline component such as potassium hydroxide or sodium hydroxide.
This alkaline cleaning liquid (C) has an alkali concentration of 0.1% to 15%
It uses a pH of 9 to 14. The alkali concentration is appropriately selected depending on the type of untreated exhaust gas.
しかして、製造工程から送り出されて来た未処理排ガス
は、未処理排ガス導入口(3)を通ってジェットスクラ
バ本体(A)の洗浄室(4)に導かれる。この時、排ガ
スと洗浄液(C)とが反応して排ガス導入管(14)の内
部又は未処理排ガス導入口(3)に粉塵(10)が次第に
溜ろうとするが、洗浄液噴出管(20)から洗浄液(C)
が螺旋流となって排ガス導入管(14)内を流下し、排ガ
ス導入管(14)の内面が洗浄されて粉塵(10)が洗い流
される。又、第3,4図の場合は、洗浄液噴出管(20a)
(20b)を間欠的に切り替えて一定時間が経過すると螺
旋洗浄液(C)の流れが逆転するようにしておき、洗浄
効果を高めるようになっている。この場合には、洗浄液
噴出管(20a)又は(20b)の開口部近傍(M)の洗浄効
果が高いものである。Then, the untreated exhaust gas sent from the manufacturing process is guided to the cleaning chamber (4) of the jet scrubber body (A) through the untreated exhaust gas introduction port (3). At this time, the exhaust gas reacts with the cleaning liquid (C) to gradually collect dust (10) inside the exhaust gas introduction pipe (14) or in the untreated exhaust gas introduction port (3), but from the cleaning liquid jet pipe (20) Cleaning liquid (C)
Becomes a spiral flow and flows down in the exhaust gas introducing pipe (14), and the inner surface of the exhaust gas introducing pipe (14) is washed and the dust (10) is washed away. In addition, in the case of Figs. 3 and 4, the cleaning liquid jet pipe (20a)
(20b) is intermittently switched and the flow of the spiral cleaning liquid (C) is reversed after a lapse of a certain time to enhance the cleaning effect. In this case, the effect of cleaning the vicinity (M) of the opening of the cleaning liquid jet pipe (20a) or (20b) is high.
洗浄室(4)では高圧噴出ノズル(2)から高圧で洗浄
液(C)が噴き出され、細かい水滴の高速ジェット噴霧
(1)となってスロート部(5)に吹き込まれ、スロー
ト部(5)で絞られて流速を増し、スカート部(6)で
次第にその流速を落とし、液受槽(B)に注ぎ込むよう
うになっている。この間洗浄室(4)内の空気は高速ジ
ェット噴霧(1)に巻き込まれて負圧になっており、前
述の排ガスは吸い込まれるようにして高速ジェット噴霧
(1)に巻き込まれ、高効率で気−液接触が図られ、以
下の反応式に従って除害される。In the cleaning chamber (4), the cleaning liquid (C) is ejected from the high-pressure ejection nozzle (2) at high pressure and becomes high-speed jet spray (1) of fine water droplets, which is blown into the throat part (5), and the throat part (5). The flow rate is increased by squeezing with, and the flow rate is gradually reduced at the skirt portion (6) and poured into the liquid receiving tank (B). During this time, the air in the cleaning chamber (4) is entrained in the high-speed jet spray (1) to be a negative pressure, and the above-mentioned exhaust gas is sucked into the high-speed jet spray (1) and is highly efficient. -Liquid contact is achieved and harm is done according to the following reaction formula.
《化学反応式》 …加水分解反応式… nSiH2Cl2+H2O→(SiOH2)n+2nHCl ここで(SiOH2)nはポリシロキ酸である。<< Chemical reaction formula >> Hydrolysis reaction formula ... nSiH 2 Cl 2 + H 2 O → (SiOH 2 ) n + 2nHCl (SiOH 2 ) n is polysiloxy acid.
3SiF4+H2O→2H2SiF6+SiO2 ここでH2SiF6はヘキサフルオロケイ酸である。3SiF 4 + H 2 O → 2H 2 SiF 6 + SiO 2 Here, H 2 SiF 6 is hexafluorosilicic acid.
SiF4+2H2O→SiO2+4HF これらの化学反応により発生した酸分は、アルカリ洗浄
液(4)で中和処理される。SiF 4 + 2H 2 O → SiO 2 + 4HF The acid content generated by these chemical reactions is neutralized with an alkaline cleaning solution (4).
又、前述の化学反応により生成した排ガス中の細かい粉
塵(10)や生産工程から運ばれて来た粉塵(10)は非常
に高い効率で高速ジェット噴霧(1)の水滴と接触して
極めて高率良く捕集される事になる。粉塵(10)を捕集
した水滴はスカート部(6)を落下する内に次第に大き
な水滴に成長し、前述のように液受槽(B)に注ぎ込
む。尚、シランのようなものを含む半導体排ガスの場合
は、爆発下限界まで不活性ガスが希釈されて洗浄室
(4)に導入される。この場合、半導体排ガスは洗浄液
(C)と接触すると加水分解して大量の粉塵(10)が生
成されるが前述の方法で捕集除去される。In addition, the fine dust (10) in the exhaust gas generated by the aforementioned chemical reaction and the dust (10) carried from the production process have extremely high efficiency and come into contact with the water droplets of the high-speed jet spray (1), resulting in extremely high It will be collected efficiently. The water droplets that have collected the dust (10) gradually grow into large water droplets while falling on the skirt portion (6), and are poured into the liquid receiving tank (B) as described above. In the case of a semiconductor exhaust gas containing a substance such as silane, the inert gas is diluted to the lower explosion limit and introduced into the cleaning chamber (4). In this case, the semiconductor exhaust gas is hydrolyzed when it comes into contact with the cleaning liquid (C) to generate a large amount of dust (10), which is collected and removed by the method described above.
又、HCl,HF,Cl2などの酸を含む排ガスも洗浄液(C)を
アルカリ液とする事により前述同様気−液接触にて中和
し、液受槽(B)に回収する事になる。Exhaust gas containing an acid such as HCl, HF, Cl 2 is also neutralized by vapor-liquid contact as described above by using the cleaning liquid (C) as an alkaline liquid, and then recovered in the liquid receiving tank (B).
…中和反応式… HF+NaOH→NaF+H2O HCl+NaOH→NaCl+H2O このようにして浄化された排ガスは液受槽(B)の上部
を通ってミスト除去装置(7)に入る。次いでミスト除
去装置(7)中を上昇している間に邪魔板層(17)を通
過し、排ガス中のミストを分離した後大気放出される。
一方、液受槽(B)に設置された循環ポンプ(8)は液
受槽(B)の洗浄液(C)をくみ上げ、高圧噴出ノズル
(2)に供給し、洗浄液(C)を循環させる。液受槽
(B)の洗浄液(C)の一部はオーバーフローにて液受
槽(B)外に取り出され、瀘過、中和、希釈され、水質
基準値以下になったところで河川に放流される。オーバ
ーフローした洗浄液(C)と等量の新しい洗浄液(C)
が液受槽(B)に供給され、液受槽(B)内の洗浄液
(C)の濃度が一定に保たれる。又、ミスト除去装置
(7)ではミストの除去が連続的になされるが、浄化さ
れた排ガス中にわずかながら粉塵(10)が残っており、
これが邪魔板層(17)の表面に付着するため、洗浄装置
(9)で付着粉塵(10)を自動的に洗い落とす。洗浄装
置(9)へは循環ポンプ(8)から洗浄液(C)が供給
される事になる。Neutralization reaction formula: HF + NaOH → NaF + H 2 O HCl + NaOH → NaCl + H 2 O The exhaust gas purified in this way passes through the upper part of the liquid receiving tank (B) and enters the mist removing device (7). Then, while passing through the baffle plate layer (17) while rising in the mist removing device (7), mist in the exhaust gas is separated and then released into the atmosphere.
On the other hand, the circulation pump (8) installed in the liquid receiving tank (B) draws up the cleaning liquid (C) in the liquid receiving tank (B) and supplies it to the high-pressure jet nozzle (2) to circulate the cleaning liquid (C). A part of the cleaning liquid (C) in the liquid receiving tank (B) is taken out of the liquid receiving tank (B) due to overflow, filtered, neutralized, diluted, and discharged to the river when the water quality falls below the standard value. The same amount of new cleaning liquid (C) as the overflowed cleaning liquid (C)
Is supplied to the liquid receiving tank (B), and the concentration of the cleaning liquid (C) in the liquid receiving tank (B) is kept constant. Also, the mist removal device (7) continuously removes the mist, but a small amount of dust (10) remains in the purified exhaust gas,
Since this adheres to the surface of the baffle layer (17), the adhering dust (10) is automatically washed off by the cleaning device (9). The cleaning liquid (C) is supplied from the circulation pump (8) to the cleaning device (9).
(効果) 本発明の第1方法は、高圧でアルカリ洗浄液を噴出させ
て細かい水滴の高速ジェット噴霧を形成する高圧噴出ノ
ズルを天井部に有し、SiH2Cl2,SiCl4,SiF4,SiH4などハ
ロゲンを含む珪素化合物やHCl,HF,Cl2などの酸分を含む
未処理排ガスの排ガス導入口を側面に有するジェットス
クラバ型の排ガス処理装置の洗浄室において、前記排ガ
ス導入口に下り傾斜に接続された排ガス導入管に洗浄液
が螺旋流となって流下させるようにしたので、排ガス導
入管の内周面が螺旋洗浄液で洗い流される事になり、排
ガス導入管の内周面に粉塵が堆積する事がない。(Effect) The first method of the present invention has a high-pressure jet nozzle in the ceiling portion for jetting an alkaline cleaning liquid at high pressure to form a high-speed jet spray of fine water droplets, and SiH 2 Cl 2 , SiCl 4 , SiF 4 , SiH 4 etc.In the washing room of the jet scrubber type exhaust gas treatment equipment which has the exhaust gas inlet of untreated exhaust gas containing acid such as HCl, HF, Cl 2 etc. on the side, it slopes down to the exhaust gas inlet Since the cleaning liquid is made to flow down in a spiral flow to the exhaust gas introduction pipe connected to, the inner peripheral surface of the exhaust gas introduction pipe is washed away by the spiral cleaning liquid, and dust is accumulated on the inner peripheral surface of the exhaust gas introduction pipe. There is nothing to do.
又、本発明の第2方法では、洗浄液が間欠的にその方向
を変えて排ガス導入管内を螺旋流となって流下させるよ
うにしたので、一方向の螺旋流では取れにくい堆積粉塵
も逆方向の螺旋流によって洗い流される事になり、より
高い洗浄効果を得る事が出来るものである。Further, in the second method of the present invention, the cleaning liquid intermittently changes its direction so as to flow downward in the exhaust gas introducing pipe as a spiral flow. It will be washed away by the spiral flow, and a higher cleaning effect can be obtained.
又、本発明装置では、洗浄室に向けて下り傾斜に配設さ
れた排ガス導入管の側面に洗浄液噴出管を周方向に接続
してあるので、排ガス導入管の内周面に粉塵の堆積原因
となる洗浄ノズルのような突起物がなく、排ガス導入管
の内周面が螺旋流によって洗い流されて粉塵が堆積する
というような事がない。Further, in the device of the present invention, since the cleaning liquid jetting pipe is connected in the circumferential direction to the side surface of the exhaust gas introducing pipe which is arranged in a downward slope toward the cleaning chamber, the cause of dust accumulation on the inner peripheral surface of the exhaust gas introducing pipe. There is no projection such as a cleaning nozzle, and the inner peripheral surface of the exhaust gas introducing pipe is not washed away by the spiral flow and dust is not accumulated.
又、排ガス導入管の側面に、その接続方向が周方向にお
いて互いに逆となるように洗浄液噴出管を接続した場合
には、一方向では洗浄されにくいような堆積粉塵に対し
て逆方向の螺旋流を流下させる事により、これを洗い落
とし、洗浄効果を高める事が出来るという利点がある。Also, when the cleaning liquid ejection pipe is connected to the side surface of the exhaust gas introduction pipe so that the connection directions are opposite to each other in the circumferential direction, the spiral flow in the opposite direction against the accumulated dust that is difficult to clean in one direction. By flowing down, there is an advantage that this can be washed off and the cleaning effect can be enhanced.
第1図……本発明のフロー図、 第2図……本発明の洗浄室の第1実施例の断面図、 第3図……本発明の洗浄室の第2実施例の断面図、 第4図……第3図の洗浄液噴出管を含む排ガス導入管の
断面図 第5図……従来例の洗浄室の断面図。 (A)……ジェットスクラバ本体、 (B)……液受槽、(C)……洗浄液、 (1)……高速ジェット噴霧、 (2)……高圧噴出ノズル、 (3)……未処理排ガス導入口、 (4)……洗浄室、(5)……スロート部、 (6)……スカート部、(7)……ミスト除去装置、 (8)……循環ポンプ、(9)……洗浄装置、 (10)……粉塵、(11)……多孔板、 (12)……オーバーフロー筒、 (13)……給水ノズル、(14)……排ガス導入管、 (15)……通孔、(16)……洗浄ノズル、 (17)……邪魔板層、(18)……大気放出口、 (19)……洗浄液供給管、(20)……洗浄液噴出管FIG. 1 ... Flow chart of the present invention, FIG. 2 ... Cross-sectional view of first embodiment of cleaning chamber of the present invention, FIG. 3 ... Cross-sectional view of second embodiment of cleaning chamber of the present invention, FIG. 4 ... Cross-sectional view of the exhaust gas introducing pipe including the cleaning liquid jet pipe of FIG. 3 FIG. 5 ... Cross-sectional view of the conventional cleaning chamber. (A) …… Jet scrubber body, (B) …… Liquid receiving tank, (C) …… Cleaning liquid, (1) …… High speed jet spraying, (2) …… High pressure jet nozzle, (3) …… Untreated exhaust gas Inlet, (4) …… washing room, (5) …… throat part, (6) …… skirt part, (7) …… mist removing device, (8) …… circulation pump, (9) …… washing Device, (10) …… Dust, (11) …… Perforated plate, (12) …… Overflow tube, (13) …… Water supply nozzle, (14) …… Exhaust gas introduction pipe, (15) …… Velet hole, (16) …… Cleaning nozzle, (17) …… Baffle layer, (18) …… Air outlet, (19) …… Cleaning liquid supply pipe, (20) …… Cleaning liquid spouting pipe
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 B01D 53/34 D ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI technical display location B01D 53/34 D
Claims (4)
水滴の高速ジェット噴霧を形成する高圧噴出ノズルを天
井部に有し、SiH2Cl2,SiCl4,SiF4,SiH4などハロゲンを
含む珪素化合物やHCl,HF,Cl2などの酸分を含む未処理排
ガスの排ガス導入口を側面に有するジェットスクラバ型
の排ガス処理装置の洗浄室において、前記排ガス導入口
に下り傾斜に接続された排ガス導入管に洗浄液が螺旋流
となって流下させるようにした事を特徴とする排ガスの
処理方法。1. A silicon containing halogen, such as SiH 2 Cl 2 , SiCl 4 , SiF 4 and SiH 4 , which has a high-pressure jet nozzle in the ceiling portion for jetting an alkaline cleaning liquid at high pressure to form a high-speed jet spray of fine water droplets. In the cleaning room of the jet scrubber type exhaust gas treatment equipment that has the exhaust gas inlet of the untreated exhaust gas containing compounds and acid components such as HCl, HF, Cl 2 on the side, the exhaust gas inlet connected to the exhaust gas inlet in a downward slope A method for treating exhaust gas, characterized in that the cleaning liquid is caused to flow down into the pipe in a spiral flow.
洗浄液が間欠的にその方向を変えて排ガス導入管内を螺
旋流となって流下させるようにした事を特徴とする排ガ
ス処理方法。2. The exhaust gas treatment device according to claim 1,
An exhaust gas treatment method characterized in that the cleaning liquid intermittently changes its direction to flow downward in a spiral flow in the exhaust gas introduction pipe.
水滴の高速ジェット噴霧を形成する高圧噴出ノズルを天
井部に有し、SiH2Cl2,SiCl4,SiF4,SiH4などハロゲンを
含む珪素化合物やHCl,HF,Cl2などの酸分を含む未処理排
ガスの排ガス導入口を側面に有するジェットスクラバ型
の排ガス処理装置の洗浄室において、前記排ガス導入口
に接続された排ガス導入管を前記洗浄室に向けて下り傾
斜に配設すると共に排ガス導入管の側面に洗浄噴出管を
周方向に接続して成る事を特徴とする排ガスの処理装
置。3. A silicon containing halogen, such as SiH 2 Cl 2 , SiCl 4 , SiF 4 , SiH 4 , which has a high-pressure jet nozzle in a ceiling portion for jetting an alkaline cleaning liquid at high pressure to form a high-speed jet spray of fine water droplets. In a cleaning room of a jet scrubber type exhaust gas treatment device having an exhaust gas introduction port of untreated exhaust gas containing acid components such as compounds, HCl, HF, Cl 2, etc., the exhaust gas introduction pipe connected to the exhaust gas introduction port is An exhaust gas treatment device, characterized in that it is arranged at a downward slope toward a cleaning chamber and that a cleaning jet pipe is circumferentially connected to a side surface of an exhaust gas introduction pipe.
排ガス導入管の側面に、その接続方向が周方向において
互いに逆となるように洗浄液噴出管を接続して成る事を
特徴とする排ガス処理装置。4. The exhaust gas treatment device according to claim 3,
An exhaust gas treatment device, characterized in that a cleaning liquid jet pipe is connected to the side surface of the exhaust gas introduction pipe so that the connection directions thereof are opposite to each other in the circumferential direction.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2252762A JPH0677669B2 (en) | 1990-09-20 | 1990-09-20 | Exhaust gas treatment method and apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2252762A JPH0677669B2 (en) | 1990-09-20 | 1990-09-20 | Exhaust gas treatment method and apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04131121A JPH04131121A (en) | 1992-05-01 |
JPH0677669B2 true JPH0677669B2 (en) | 1994-10-05 |
Family
ID=17241941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2252762A Expired - Lifetime JPH0677669B2 (en) | 1990-09-20 | 1990-09-20 | Exhaust gas treatment method and apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0677669B2 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4805463B2 (en) * | 2001-01-26 | 2011-11-02 | 株式会社東設 | Toxic gas abatement equipment |
JP4850350B2 (en) * | 2001-05-28 | 2012-01-11 | 株式会社東設 | Toxic gas removal method and apparatus |
JP4154219B2 (en) | 2001-12-25 | 2008-09-24 | キヤノン株式会社 | Wet gas treatment method |
FR2938448B1 (en) * | 2008-11-20 | 2014-09-26 | Total Raffinage Marketing | DEVICE AND METHOD FOR GAS TREATMENT AND COMPRESSION |
JP6082339B2 (en) * | 2013-11-21 | 2017-02-15 | 信越化学工業株式会社 | Etching reaction gas removal method and scrubber apparatus |
JP6188033B2 (en) * | 2015-03-13 | 2017-08-30 | 三菱重工業株式会社 | Scrubber, exhaust gas treatment device, ship |
CN114345106B (en) * | 2021-12-30 | 2023-12-12 | 湖北瓮福蓝天化工有限公司 | Method and system for removing chlorine element in anhydrous hydrogen fluoride production process |
-
1990
- 1990-09-20 JP JP2252762A patent/JPH0677669B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH04131121A (en) | 1992-05-01 |
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