JPH0676771A - Scanning type image pickup device, image pickup method, and image pickup plate used therefor - Google Patents

Scanning type image pickup device, image pickup method, and image pickup plate used therefor

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Publication number
JPH0676771A
JPH0676771A JP5146311A JP14631193A JPH0676771A JP H0676771 A JPH0676771 A JP H0676771A JP 5146311 A JP5146311 A JP 5146311A JP 14631193 A JP14631193 A JP 14631193A JP H0676771 A JPH0676771 A JP H0676771A
Authority
JP
Japan
Prior art keywords
image pickup
probe
plate
storage layer
image pick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5146311A
Other languages
Japanese (ja)
Inventor
Nobuyuki Nakagiri
伸行 中桐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP5146311A priority Critical patent/JPH0676771A/en
Publication of JPH0676771A publication Critical patent/JPH0676771A/en
Priority to US08/359,473 priority patent/US5464977A/en
Pending legal-status Critical Current

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  • Conversion Of X-Rays Into Visible Images (AREA)
  • Radiography Using Non-Light Waves (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)

Abstract

PURPOSE:To provide a practical image pick-up device and image pickup method with which an image of an object by radiation of electromagnetic waves of an X-ray or the like can be detected at an extremely high resolution in spite of a relatively simple constitution. CONSTITUTION:An image pick-up device comprises an image pick-up plate 1 which generates change of electric properties in accordance with radiation of electromagnetic waves, a probe 10 disposed in contact with the image pick-up plate 1, a scan means 40 to scan the probe 10 and the image pick-up plate 1 relative to each other, an energization means 20 to get the probe 10 in contact with the image pick-up plate 1 by a specified weak force, a detection means 30 to detect the change of electric properties generated in the image pick-up plate by the probe, and a display means 80 to display electromagnetic wave distribution information on the image pick-up plate 1 based on outputs of the scan means 40 and outputs of the detection means 30. An image pick-up method comprises a step of getting the probe in contact with the image pick-up plate 1 by a specified energization force, a step of detecting the change of the electric properties generated in the image pick-up plate 1 by the probe 10 while scanning the probe 10 and the image pick-up plate 1 relative to each other, and a step of displaying the electromagnetic wave distribution information on the image pick-up plate 1 based on the outputs of the scan means 40 and outputs of the detection means 30.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、高分解能が得られる光
学検出装置、特にＸ線等の電磁波の照射による像を検出
するための装置、及びその方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical detection device capable of obtaining high resolution, and more particularly to a device for detecting an image by irradiation of electromagnetic waves such as X-rays, and a method thereof.

【０００２】[0002]

【従来の技術】通常の可視光よりも分解能が高い撮像方
法としてＸ線を用いる方法があり、Ｘ線顕微鏡やＸ線望
遠鏡などが知られている。例えば、波長が２〜５nmの軟
Ｘ線を用いるＸ線顕微鏡は、可視光（波長が約 400〜80
0nm ）を用いるよりも分解能が高く、また生物試料を水
中で生きたまま観察できるため医学や生物光学の分野で
有用である。2. Description of the Related Art There is a method of using X-rays as an imaging method having a higher resolution than ordinary visible light, and X-ray microscopes and X-ray telescopes are known. For example, an X-ray microscope that uses soft X-rays with a wavelength of 2 to 5 nm has a visible light (wavelength of about 400 to 80
It has a higher resolution than that of 0 nm) and is useful in the fields of medicine and bio-optics because it can observe biological samples alive in water.

【０００３】このようなＸ線顕微鏡の場合、その基本的
な構成は、Ｘ線発生器、このＸ線発生器から出射したＸ
線を集光して試料を照明する集光用光学系、試料を透過
したＸ線を結像させる結像用光学系、結像用光学系の結
像位置に配置された撮像装置、Ｘ線発生器から撮像装置
までの光路を真空にするための真空容器、および該真空
容器内を真空に排気するための排気系からなる。そし
て、前記撮像装置としては、主に写真、レジスト、 MCP
（マイクロチャンネルプレート）に蛍光板を組み合わせ
たもの、CCD 等が用いられていた。In the case of such an X-ray microscope, the basic structure thereof is an X-ray generator and an X-ray emitted from this X-ray generator.
Condensing optical system for condensing rays to illuminate the sample, imaging optical system for focusing X-rays transmitted through the sample, imaging device arranged at the imaging position of the imaging optical system, X-ray It comprises a vacuum container for evacuating the optical path from the generator to the imaging device, and an exhaust system for evacuating the inside of the vacuum container to a vacuum. The imaging device is mainly used for photography, resist, MCP.
A combination of (microchannel plate) with a fluorescent plate, CCD, etc. were used.

【０００４】[0004]

【発明が解決しようとする課題】ところで、Ｘ線の分解
能に対応した光学検出装置（例えばＸ線顕微鏡）を得る
ためには、この装置の光学系（結像系）または撮像装置
（受光手段）の両者の分解能を高める必要がある。しか
し、従来撮像装置として使用していた CCDの１画素のサ
イズは約10μｍであり、その撮像装置としての分解能は
Ｘ線の波長によって得られる分解能よりも低い。同様
に、 MCPと蛍光板とを組み合わせた場合も撮像装置とし
ての分解能はＸ線よりも低く、光学検出装置としての分
解能は撮像装置の分解能に制約されてしまう。そこで、
光学系の倍率を高くすることが考えられるが、その場
合、Ｘ線光学素子の製作が難しいうえに、光学系の構成
が大型化して装置自体も大型化してしまう。By the way, in order to obtain an optical detection device (for example, an X-ray microscope) corresponding to the resolution of X-rays, an optical system (imaging system) or an image pickup device (light receiving means) of this device is obtained. It is necessary to increase the resolution of both. However, the size of one pixel of the CCD used as an image pickup device is about 10 μm, and the resolution of the image pickup device is lower than that obtained by the wavelength of X-rays. Similarly, when the MCP and the fluorescent screen are combined, the resolution of the image pickup device is lower than that of the X-ray, and the resolution of the optical detection device is limited by the resolution of the image pickup device. Therefore,
It is conceivable to increase the magnification of the optical system, but in that case, it is difficult to manufacture the X-ray optical element, and the size of the optical system becomes large, so that the apparatus itself becomes large.

【０００５】一方、撮像装置として写真やレジストを用
いる方法は、分解能はある程度得ることができるが、撮
像する度に真空容器から取り出して現像する必要があり
作業が煩雑な上に時間を要する。このような問題を解決
する方法として、Ｘ線照射により生ずる光電子を導伝性
探針によりトンネル現象を利用して検出し、探針を２次
元走査することによって、Ｘ線による２次元像を得る手
法が、例えば特開平４−１５２２８９号公報により提案
されている。この装置では、Ｘ線照射量に比例して増大
する光電子の分布を、トンネル現象により探針を流れる
電流量として検出することにより、Ｘ線照射量の分布を
検出する。このため、理論的には極めて高い分解能でＸ
線像を画像化し、２次元Ｘ線検出器を構成することがで
きる。On the other hand, the method of using a photograph or a resist as the image pickup device can obtain a certain degree of resolution, but it needs to be taken out of the vacuum container and developed each time an image is picked up, and the work is complicated and time-consuming. As a method of solving such a problem, photoelectrons generated by X-ray irradiation are detected by a conducting phenomenon using a tunnel phenomenon, and the probe is two-dimensionally scanned to obtain a two-dimensional image by X-rays. A method is proposed, for example, by Japanese Patent Laid-Open No. 4-152289. In this device, the distribution of the X-ray irradiation amount is detected by detecting the distribution of photoelectrons that increases in proportion to the X-ray irradiation amount as the amount of current flowing through the probe due to the tunnel phenomenon. Therefore, theoretically, X with an extremely high resolution
A two-dimensional X-ray detector can be constructed by imaging a line image.

【０００６】しかしながら、この装置においては探針を
被検面に対して近接距離で走査することが必要であり、
検出情報としての電流量が、探針と光電面との距離にも
依存するため、検出される電流量の変化がＸ線照射量の
分布によるものか、探針と光電面との距離変化によるも
のかを分離することができない。従って、探針と光電面
との距離の変動がそのまま測定の誤差を生ずるため、実
用上において高い分解能を保つことは困難であった。However, in this apparatus, it is necessary to scan the probe with a close distance to the surface to be inspected,
Since the amount of current as detection information also depends on the distance between the probe and the photocathode, whether the change in the detected current amount is due to the distribution of the X-ray irradiation amount or the change in the distance between the probe and the photocathode. You can't separate things. Therefore, the variation in the distance between the probe and the photocathode causes a measurement error as it is, and it is difficult to maintain a high resolution in practical use.

【０００７】そこで本発明の目的は、上述の如き問題点
を解決し、Ｘ線等の電磁波の照射による物体像を、比較
的簡単な構成でありながら、ナノメータオーダーでの極
めて高い分解能にて検出し得る実用的な走査型撮像装置
及び撮像方法を提供することにある。Therefore, an object of the present invention is to solve the above-mentioned problems, and detect an object image by irradiation of electromagnetic waves such as X-rays with an extremely high resolution on the order of nanometers, while having a relatively simple structure. It is an object of the present invention to provide a practical scanning type image pickup apparatus and an image pickup method that can be used.

【０００８】[0008]

【課題を解決するための手段】本発明による走査型撮像
装置は、図１の概略構成図に示す如く、電磁波の照射に
応じて電気的特性の変化を生ずる撮像板１と、該撮像板
に接触して配置される探針10と、該探針と前記撮像板と
を相対的に走査する走査手段40と、前記探針を前記撮像
板に対して所定の微弱力によって接触させる付勢手段20
と、前記探針により前記撮像板に生ずる電気的特性の変
化を検出する検出手段30と、前記走査手段の出力と前記
検出手段の出力とから前記撮像板上の電磁波分布情報を
表示する表示手段80とを有するものである。As shown in the schematic configuration diagram of FIG. 1, a scanning type image pickup apparatus according to the present invention includes an image pickup plate 1 which causes a change in electrical characteristics in response to irradiation of an electromagnetic wave, and an image pickup plate which is provided in the image pickup plate. A probe 10 arranged in contact with the scanning unit, a scanning unit 40 for relatively scanning the probe and the image pickup plate, and a biasing unit for bringing the probe into contact with the image pickup plate with a predetermined weak force. 20
A detection means 30 for detecting a change in electrical characteristics of the image pickup plate caused by the probe, and a display means for displaying electromagnetic wave distribution information on the image pickup plate from the output of the scanning means and the output of the detection means. With 80.

【０００９】そして、本発明による撮像方法は、電磁波
の照射に応じて電気的特性の変化を生ずる撮像板上に、
探針を所定の付勢力によって接触させるステップと、該
探針と該撮像板とを相対的に走査しつつ前記探針により
前記撮像板に生ずる電気的特性の変化を検出するステッ
プと、前記走査手段の出力と前記検出手段の出力とから
前記撮像板上の電磁波分布情報を表示するステップとを
有するものである。Then, the image pickup method according to the present invention comprises:
A step of bringing the probe into contact with a predetermined biasing force; a step of relatively scanning the probe and the imaging plate while detecting a change in electrical characteristics generated on the imaging plate by the probe; And a step of displaying electromagnetic wave distribution information on the image pickup plate from the output of the means and the output of the detection means.

【００１０】[0010]

【作用】上記のごとき構成により、探針は撮像面に対し
て常に一定の付勢力によって接触しつつ走査されるた
め、従来の如き探針の撮像面との距離の変動による検出
情報の変動をきたす恐れがなく、常に安定した検出を行
うことができる。図１に示すとおり、電磁波としてのＸ
線源100 からのＸ線により被検試料101が照射され、試
料101 を透過したＸ線が撮像板１に到達し、撮像板上に
電気的特性の変化を生ずる。撮像板１上に形成された電
磁波としてのＸ線照射により得られる像が、撮像板に接
触して設けられた探針10を通して電気的特性検出手段30
により電気特性の変化として検出される。探針10は付勢
手段20により所定の微弱な付勢力によって撮像板１の表
面上に接触されつつ、走査手段40により撮像板１上を２
次元的に走査し、電気的特性変化の検出手段30からの信
号に基づいて撮像板１上のＸ線像が表示手段80上に二次
元像として表示される。With the above-described structure, the probe is scanned while always contacting the image pickup surface with a constant urging force, so that there is no change in the detected information due to the change in the distance between the probe and the image pickup surface as in the conventional case. There is no fear of causing damage, and stable detection can always be performed. As shown in FIG. 1, X as an electromagnetic wave
The sample 101 to be inspected is irradiated with X-rays from the radiation source 100, and the X-rays transmitted through the sample 101 reach the image pickup plate 1 to cause a change in electrical characteristics on the image pickup plate. An image obtained by X-ray irradiation as an electromagnetic wave formed on the image pickup plate 1 passes through a probe 10 provided in contact with the image pickup plate 1 to detect an electrical characteristic 30.
Is detected as a change in electrical characteristics. The probe 10 is brought into contact with the surface of the image pickup plate 1 by a predetermined weak urging force by the urging device 20, and the probe 10 moves over the image pickup plate 1 by the scanning device 40.
The X-ray image on the image pickup plate 1 is displayed as a two-dimensional image on the display unit 80 based on the signal from the detection unit 30 of the change in the electrical characteristics.

【００１１】これら装置全体は制御手段70によって統括
制御され、撮像板１上の像の２次元検出とＸ線源100 に
よる試料101 の照射との連動関係も制御手段70によって
制御される。そして、被検試料101 を載置するステージ
102 の走査手段110 の駆動制御も制御手段70によって行
うことが好ましい。撮像板としては、電磁波が照射され
ると光電子を放出する変換層、前記光電子を蓄積する非
電導性物質からなる電荷蓄積層、および前記変換層と電
荷蓄積層との間に設けられた絶縁層とを有する構成が有
効である。電磁波が照射されると光電子を放出する変換
層に負の電圧をかけ、該放出された光電子を蓄積する非
電導性物質からなる蓄積層を正に帯電させた状態で前記
変換層に所望の画像の情報を含んだ電磁波を照射し、該
電磁波の照射によって放出された前記光電子を蓄積層に
蓄積させて電荷分布を形成させ、前記蓄積層に形成され
た電荷分布を測定することで前記画像の情報を読み出す
ことが可能である。The control unit 70 controls the entire apparatus as a whole, and the control unit 70 also controls the interlocking relationship between the two-dimensional detection of the image on the imaging plate 1 and the irradiation of the sample 101 by the X-ray source 100. Then, the stage on which the test sample 101 is placed
The drive control of the scanning means 110 of 102 is also preferably performed by the control means 70. As the imaging plate, a conversion layer that emits photoelectrons when irradiated with electromagnetic waves, a charge storage layer made of a non-conductive material that stores the photoelectrons, and an insulating layer provided between the conversion layer and the charge storage layer A configuration having and is effective. A negative voltage is applied to the conversion layer that emits photoelectrons when irradiated with electromagnetic waves, and a desired image is formed on the conversion layer in a state where the storage layer made of a non-conductive material that stores the emitted photoelectrons is positively charged. Of the image by irradiating an electromagnetic wave containing the information of (1), accumulating the photoelectrons emitted by the irradiation of the electromagnetic wave in an accumulation layer to form a charge distribution, and measuring the charge distribution formed in the accumulation layer. It is possible to read information.

【００１２】具体的検出においては、Ｘ線（電磁波）の
強度分布を撮像板の電荷蓄積層の電荷分布に変換し、こ
の電荷分布を読み出すことにより画像を得るものであ
る。前記Ｘ線顕微鏡等においては、試料を透過したＸ線
は該試料を透過した部分により透過後の強度が異なる。
従って、試料透過後のＸ線を変換層に照射すると、この
変換層は照射されたＸ線の電磁波量（強度）に応じた量
の光電子を放出し、放出された光電子は電荷蓄積層に捕
捉されてこの蓄積層に蓄積する。その結果、蓄積層には
蓄積された光電子によってＸ線の電磁波量に応じた電荷
が２次元に分布することになる。従って、この電荷分布
を読み出すことで、この分布をＸ線により得られた画像
とすることができる。In specific detection, the intensity distribution of X-rays (electromagnetic waves) is converted into the charge distribution of the charge storage layer of the image pickup plate, and this charge distribution is read to obtain an image. In the X-ray microscope and the like, the intensity of X-rays transmitted through the sample varies depending on the portion transmitted through the sample.
Therefore, when the conversion layer is irradiated with X-rays after passing through the sample, the conversion layer emits photoelectrons in an amount corresponding to the electromagnetic wave amount (intensity) of the irradiated X-rays, and the emitted photoelectrons are trapped in the charge storage layer. It is stored in this storage layer. As a result, the charges corresponding to the amount of electromagnetic waves of X-rays are two-dimensionally distributed by the accumulated photoelectrons in the accumulation layer. Therefore, by reading out this charge distribution, this distribution can be used as an image obtained by X-rays.

【００１３】電荷分布による測定原理は次のとおりであ
る。探針に正、変換層に負の所定の電圧をかけると、変
換層の蓄積層側において探針付近に空乏層を生ずる。こ
の空乏層の厚みは、蓄積層の探針近傍のホールの量に依
存する。この空乏層の厚みが異なると、探針と変換層間
の静電容量が異なる。この特性を利用して、蓄積層の電
荷分布を間接的に測定することができるのである。この
ような測定原理に基づき、電荷分布測定手段と前記撮像
板とを相対移動させつつ、測定手段により撮像板の蓄積
層を走査してその電荷分布を測定していく。撮像板の変
換層としては、半導体層（Ｐ型シリコンなど）を用いる
ことができる。なお、電荷を安定した状態で蓄積させる
ため、電荷蓄積層は電荷の拡散が小さい非電導性物質か
らなる物質（例えばSiN ：シリコンナイトライド）で形
成することが望ましい。The principle of measurement by charge distribution is as follows. When a predetermined positive voltage is applied to the probe and a negative predetermined voltage is applied to the conversion layer, a depletion layer is generated near the probe on the storage layer side of the conversion layer. The thickness of this depletion layer depends on the amount of holes near the probe of the accumulation layer. When the thickness of the depletion layer is different, the capacitance between the probe and the conversion layer is different. This characteristic can be used to indirectly measure the charge distribution in the storage layer. Based on such a measurement principle, the charge distribution measuring means and the image pickup plate are relatively moved while the measuring means scans the storage layer of the image pickup plate to measure the charge distribution. A semiconductor layer (P-type silicon or the like) can be used as the conversion layer of the imaging plate. In order to store charges in a stable state, it is desirable that the charge storage layer be formed of a substance (for example, SiN: silicon nitride) made of a non-conductive substance with a small diffusion of charges.

【００１４】上記のごとき本発明の撮像板は、画像情報
（電荷分布）を消去することで何回も使用することがで
きる他、真空中での撮像および読出が可能である。その
ため、高分解能で操作性の優れた撮像装置を提供するこ
とができる。以下、本発明を実施例を用いて詳細に説明
するが、本発明はこれに限定されるものではない。The image pickup plate of the present invention as described above can be used many times by erasing the image information (charge distribution), and can also perform image pickup and reading in a vacuum. Therefore, it is possible to provide an imaging device having high resolution and excellent operability. Hereinafter, the present invention will be described in detail with reference to examples, but the present invention is not limited thereto.

【００１５】[0015]

【実施例】図２は、本発明の撮像板の概略断面を示す図
である。撮像板１は、SiN （シリコンナイトライド）か
らなる電荷蓄積層２、SiO （シリコンオキサイド）から
なる絶縁層３、およびｐ型Si（シリコン）からなる変換
層４とで形成されている。蓄積層２の厚さは、 100〜 5
00Å、絶縁層３の厚さは、30〜50Åとした。また、変換
層４の厚さは、使用するＸ線の変換層４での吸収を考慮
して、例えば 0.1μm 以下に設定するようにした。FIG. 2 is a diagram showing a schematic cross section of an image pickup plate of the present invention. The image pickup plate 1 is formed of a charge storage layer 2 made of SiN (silicon nitride), an insulating layer 3 made of SiO 2 (silicon oxide), and a conversion layer 4 made of p-type Si (silicon). The thickness of the storage layer 2 is 100 to 5
The thickness of 00 Å and the insulating layer 3 was 30 to 50 Å. The thickness of the conversion layer 4 is set to, for example, 0.1 μm or less in consideration of absorption of X-rays used by the conversion layer 4.

【００１６】以下、撮像の過程について説明する。ま
ず、図２に示すように、撮像前に電荷蓄積層２の電子を
変換層４に移して蓄積層２にホール（空孔）を形成して
おく。この作業（以下、初期化という）は、蓄積層２上
に導電性の探針５を所定の付勢力で接触させ、この探針
５と変換層４との間に印加手段６により電圧（例えば約
40Ｖ）を印加しながら蓄積層２の面上を走査することで
行われる。これにより、蓄積層２から変換層４に電子が
移動し、蓄積層２は正に、変換層４は負に帯電した状態
となる。絶縁層３は、電圧が印加されていない時に変換
層４から蓄積層２へ、あるいは蓄積層２から変換層４へ
電子が移動するのを防ぐ役目を果たす。変換層４での負
の電荷は絶縁層３との境界付近にたまる。なお、探針５
は、一旦撮像を行った撮像板の像を消去する時や電荷分
布（静電容量）を測定する時にも使用することができ
る。The image pickup process will be described below. First, as shown in FIG. 2, electrons in the charge storage layer 2 are transferred to the conversion layer 4 to form holes (holes) in the storage layer 2 before imaging. In this operation (hereinafter referred to as initialization), a conductive probe 5 is brought into contact with the storage layer 2 with a predetermined urging force, and a voltage (for example, a voltage is applied between the probe 5 and the conversion layer 4 by an applying unit 6). about
It is performed by scanning the surface of the storage layer 2 while applying 40 V). As a result, electrons move from the storage layer 2 to the conversion layer 4, so that the storage layer 2 is positively charged and the conversion layer 4 is negatively charged. The insulating layer 3 serves to prevent electrons from moving from the conversion layer 4 to the storage layer 2 or from the storage layer 2 to the conversion layer 4 when no voltage is applied. Negative charges in the conversion layer 4 accumulate near the boundary with the insulating layer 3. In addition, the probe 5
Can also be used when erasing the image of the imaging plate that has been once imaged and when measuring the charge distribution (capacitance).

【００１７】次に、図３に示すように、変換層４にＸ線
を照射する。このＸ線は、例えばＸ線顕微鏡において
は、試料を透過して結像用光学系により結像されたもの
である。変換層４は、Ｘ線が照射されると光電効果によ
り光電子を放出し、図３に示すように、絶縁層３との境
界付近に電荷がたまる。その際、放出する光電子の量
は、照射されたＸ線の量（強度）に依存する。放出され
た光電子は、正に帯電している蓄積層２に引き寄せられ
るため、分散を抑えられた状態で前記ホールに捕捉され
てこの蓄積層に蓄積される。従って、光電子の蓄積によ
り形成される蓄積層２の電荷分布（つまり、前記ホール
の分布を意味する）は、変換層４に照射されたＸ線の強
度分布に応じた分布状態となる。つまり、変換層４と蓄
積層２で互いに対応する箇所においては、変換層４のＸ
線量が多いと蓄積層２においてはホールの数の減少の度
合が大きくなる。一方、変換層４のＸ線量が少ないと蓄
積層２においてもホールの減少の度合は小さい。その結
果、撮像板１においては、Ｘ線の光量が多い箇所ほど蓄
積された電荷が少なくなる。こうして、Ｘ線による試料
の像はこのホールの分布に対応した状態で蓄積層２に形
成される。Next, as shown in FIG. 3, the conversion layer 4 is irradiated with X-rays. In an X-ray microscope, for example, the X-rays pass through the sample and are imaged by the imaging optical system. When the conversion layer 4 is irradiated with X-rays, it emits photoelectrons by the photoelectric effect, and as shown in FIG. 3, electric charges are accumulated near the boundary with the insulating layer 3. At that time, the amount of photoelectrons emitted depends on the amount (intensity) of the irradiated X-rays. Since the emitted photoelectrons are attracted to the positively charged storage layer 2, they are trapped in the holes and are stored in the storage layer while being suppressed in dispersion. Therefore, the charge distribution of the storage layer 2 formed by the storage of photoelectrons (that is, the distribution of the holes) becomes a distribution state according to the intensity distribution of the X-rays irradiated on the conversion layer 4. That is, in the portions of the conversion layer 4 and the storage layer 2 that correspond to each other, X of the conversion layer 4
When the dose is high, the number of holes in the storage layer 2 decreases to a large extent. On the other hand, if the X-ray dose of the conversion layer 4 is small, the degree of reduction of holes is small even in the storage layer 2. As a result, in the image pickup plate 1, the accumulated charges are reduced as the amount of X-ray light increases. Thus, an image of the sample by X-rays is formed on the storage layer 2 in a state corresponding to the distribution of the holes.

【００１８】像（画像）の読み出しは、図４に示すよう
に蓄積層２の電荷分布を測定することで行われる。この
測定には、蓄積層２の電荷量（静電容量）を局所的に測
定する電荷分布測定手段としての探針10と容量測定器11
とを用い、探針10と撮像板１とを相対的に移動させて、
撮像板１上の二次元像を検出する。図５は、本発明の走
査型撮像装置の一実施例を示す概略構成図である。本実
施例の撮像装置は、板バネ状のカンチレバー21、このレ
バー21の先端に設置された曲率半径の小さな（例えば、
数10nm）先端を有する導電性の探針10、探針10を用いて
撮像板１の蓄積層２における電荷分布を測定する電気特
性検出手段、レバー21の曲がり具合により探針10と撮像
板１（蓄積層２）との接触圧を付加する付勢手段、およ
び撮像板１を載置してＸＹＺ方向に移動可能な移動手段
（ＸＹＺステージ）12とで構成されている。カンチレバ
ー21は、探針10と蓄積層２との間に所定の微弱な力（斥
力：10-8〜10-9N 程度）で付勢するように構成されてい
る。The image is read out by measuring the charge distribution of the storage layer 2 as shown in FIG. For this measurement, the probe 10 and the capacitance measuring device 11 as the charge distribution measuring means for locally measuring the charge amount (electrostatic capacitance) of the storage layer 2 are used.
And are used to move the probe 10 and the imaging plate 1 relatively,
A two-dimensional image on the image pickup plate 1 is detected. FIG. 5 is a schematic configuration diagram showing an embodiment of the scanning image pickup apparatus of the present invention. The image pickup apparatus according to the present embodiment includes a leaf spring-shaped cantilever 21 and a small radius of curvature installed at the tip of the lever 21 (for example,
Conductive probe 10 having a tip, electric characteristic detecting means for measuring the charge distribution in the storage layer 2 of the imaging plate 1 using the probe 10, the probe 10 and the imaging plate 1 depending on how the lever 21 is bent. It comprises an urging means for applying a contact pressure to the (accumulation layer 2), and a moving means (XYZ stage) 12 on which the image pickup plate 1 is placed and which can move in the XYZ directions. The cantilever 21 is configured to apply a predetermined weak force (repulsive force: 10 −8 to 10 −9 N) between the probe 10 and the storage layer 2.

【００１９】前記電気特性検出手段は、蓄積層２の電荷
量を検出するための容量測定器（キャパシティセンサ）
11で構成されている。移動手段12を所望の方向に駆動制
御すると共に蓄積層２上での探針10の位置（測定箇所）
とその位置での容量測定器11による測定結果とを対応さ
せて蓄積層２の電荷分布を求める制御手段70、および制
御手段70で求めた蓄積層２の電荷分布を試料の像として
表示する表示手段80、とを備えている。容量測定器11
は、撮像板１とは変換層４において接続され、また、探
針10とはレバー21を介して接続されている。さらに、本
実施例では、蓄積層２にホールを形成するために電圧を
印加する初期化電圧印加手段15が設けられており、これ
により撮像前に蓄積層２の電子を変換層４に移して蓄積
層２にホールを形成するようにしている。The electrical characteristic detecting means is a capacitance measuring device (capacity sensor) for detecting the charge amount of the storage layer 2.
It is composed of 11. The moving means 12 is driven and controlled in a desired direction, and the position of the probe 10 on the storage layer 2 (measurement point)
And a control means 70 for obtaining the charge distribution of the storage layer 2 by associating the measurement result by the capacitance measuring device 11 at that position, and a display for displaying the charge distribution of the storage layer 2 obtained by the control means 70 as an image of the sample. Means 80, and. Capacity measuring device 11
Are connected to the image pickup plate 1 in the conversion layer 4, and are connected to the probe 10 via a lever 21. Further, in this embodiment, an initialization voltage applying means 15 for applying a voltage to form holes in the storage layer 2 is provided, whereby electrons in the storage layer 2 are transferred to the conversion layer 4 before imaging. A hole is formed in the storage layer 2.

【００２０】前記付勢手段は、探針10が一定の付勢力で
蓄積層２の表面に接触しつつ、走査できるように制御す
るものである。この付勢手段は、探針10の近傍に設けら
れたカンチレバー21の反射面21ａに測定光（レーザ光）
22を照射する光源（図示せず）と、反射面21ａで反射し
た測定光22を検出するための光検出手段（例えば、２分
割光検出器）23と、この光検出手段23の出力によりカン
チレバー21のたわみ量を検出してこのたわみ量が一定に
なるよう（光検出器23の出力が一定となるよう）に制御
手段70を介して移動手段12をＺ方向に駆動させるＺ方向
制御手段２４と、で構成されている。この付勢手段にお
ける探針変位測定にはサブナノメートルの分解能を有す
ることが望ましい。このような探針の変位測定系として
は、本実施例で用いたレバー21の反射面21ａに測定光22
を照射する構成の他に、反射面21ａへの照射光とその反
射光とを干渉させて探針の変位を測定する構成や、レバ
ー21の背面にＳＴＭ（走査型トンネル顕微鏡）の探針を
配置してこのＳＴＭの探針とレバー21との間のトンネル
電流を測定して変位を測定する構成等を用いることもで
きる。The urging means controls the probe 10 so that it can scan while contacting the surface of the storage layer 2 with a constant urging force. This urging means serves to measure the measuring light (laser light) on the reflecting surface 21a of the cantilever 21 provided near the probe 10.
A light source (not shown) for irradiating 22 and a light detecting means (for example, a two-divided photodetector) 23 for detecting the measuring light 22 reflected by the reflecting surface 21a, and a cantilever by the output of this light detecting means 23. The Z direction control means 24 that drives the moving means 12 in the Z direction via the control means 70 so that the deflection amount of 21 is detected and the deflection amount becomes constant (the output of the photodetector 23 becomes constant). It consists of and. It is desirable to have a resolution of sub-nanometer for the probe displacement measurement in this urging means. As such a probe displacement measuring system, a measuring light beam 22 is applied to the reflecting surface 21a of the lever 21 used in this embodiment.
In addition to the structure for irradiating the light, the structure for measuring the displacement of the probe by interfering the light irradiated on the reflecting surface 21a and the reflected light, or the STM (scanning tunneling microscope) probe on the back surface of the lever 21. It is also possible to use a configuration in which the displacement is measured by arranging and measuring the tunnel current between the STM probe and the lever 21.

【００２１】電荷分布の測定は、制御手段70により移動
手段12を駆動して蓄積層２の表面を探針10でＸＹ方向に
走査することで行われる。測定中は、前記探針変位測定
系によってレバー21のたわみ量が一定になるよう制御さ
れており、探針10は常に一定圧力で蓄積層２の表面に接
触しつつ走査する。容量測定器11は、各測定箇所におけ
る電荷量の大きさの違いを探針10と変換層４との間の静
電容量の違いとして検出し、その結果を制御手段70に出
力する。制御手段70は、容量測定器11から入力した静電
容量の値と、この値が検出された蓄積層２の位置から蓄
積層２の電荷の分布状態を求め表示手段80に出力する。
表示手段80は、制御手段70から送られた電荷分布を前記
Ｘ線による試料の像（画像）として表示する。The charge distribution is measured by driving the moving means 12 by the control means 70 and scanning the surface of the storage layer 2 with the probe 10 in the XY directions. During the measurement, the deflection of the lever 21 is controlled to be constant by the probe displacement measuring system, and the probe 10 always scans while contacting the surface of the storage layer 2 with a constant pressure. The capacitance measuring device 11 detects the difference in the amount of charge at each measurement location as the difference in electrostatic capacitance between the probe 10 and the conversion layer 4, and outputs the result to the control means 70. The control means 70 obtains the value of the electrostatic capacitance input from the capacitance measuring device 11 and the distribution state of the charge of the storage layer 2 from the position of the storage layer 2 where this value is detected, and outputs it to the display means 80.
The display unit 80 displays the charge distribution sent from the control unit 70 as an image of the sample by the X-ray.

【００２２】本実施例で用いた撮像装置は分解能が高い
ため、Ｘ線の分解能を損なうことなく撮像できるという
利点がある。この撮像装置は、前述のような蓄積層２に
ホールを形成して撮像板１を初期化したり、撮像板１に
記録された像を消去する際にも使用することができる。
図６は、撮像装置を備えたＸ線顕微鏡の一例を示す概略
構成図である。図６において、図５と同一機能を有する
構成要件については、同一記号を付してその説明を省略
する。このＸ線顕微鏡は、Ｘ線源51、Ｘ線源51から出射
したＸ線を集光して試料54を照明する集光用光学素子52
と絞り53からなる集光用光学系、試料54を透過したＸ線
を結像させる結像用光学素子55、および結像用光学素子
55の結像位置に配置された撮像板１とで構成されるＸ線
光学系と、Ｘ線源51から撮像板１までの光路を真空にす
るための真空容器56、および該真空容器56内を真空に排
気するための排気系57とを有している。Since the image pickup apparatus used in this embodiment has a high resolution, there is an advantage that an image can be picked up without impairing the X-ray resolution. This imaging device can be used also when forming a hole in the storage layer 2 as described above to initialize the imaging plate 1 or when erasing an image recorded on the imaging plate 1.
FIG. 6 is a schematic configuration diagram showing an example of an X-ray microscope equipped with an imaging device. 6, constituent elements having the same functions as those in FIG. 5 are designated by the same reference numerals and the description thereof will be omitted. This X-ray microscope includes an X-ray source 51 and a condensing optical element 52 for condensing X-rays emitted from the X-ray source 51 and illuminating a sample 54.
And a diaphragm 53 for focusing, an imaging optical element 55 for imaging the X-rays transmitted through the sample 54, and an imaging optical element.
An X-ray optical system composed of the image pickup plate 1 arranged at the image forming position of 55, a vacuum container 56 for making the optical path from the X-ray source 51 to the image pickup plate 1 a vacuum, and the inside of the vacuum container 56. And an exhaust system 57 for evacuating

【００２３】さらに、撮像板１に記録された試料54の像
を読み出す手段として、撮像板１をＸＹＺ方向に移動さ
せるための移動手段12、先端部に探針10が設置されたカ
ンチレバー21、容量測定手段60、カンチレバー21の反射
面に測定光22を照射する光源61、および探針変位測定手
段62とを備えている。容量測定手段60は、撮像板１の蓄
積層の電荷量を検出するための容量測定器と、前記蓄積
層上での探針10の位置とその位置での前記測定器による
測定結果とを対応させて、蓄積層の電荷分布を試料の像
として表示する表示手段とで構成されている。光源61と
探針変位測定手段62は、探針変位測定系を構成してお
り、探針変位測定手段62はカンチレバー21の反射面で反
射した測定光22を検出するための光検出手段とこの光検
出手段の出力によりカンチレバー21のたわみ量が一定に
なるように移動手段12を駆動するＺ方向制御手段とを有
している。Further, as a means for reading out the image of the sample 54 recorded on the image pickup plate 1, a moving means 12 for moving the image pickup plate 1 in the XYZ directions, a cantilever 21 having a probe 10 at the tip thereof, a capacitance A measuring means 60, a light source 61 for irradiating the reflecting surface of the cantilever 21 with the measuring light 22, and a probe displacement measuring means 62 are provided. The capacitance measuring means 60 corresponds the capacitance measuring device for detecting the charge amount of the accumulation layer of the imaging plate 1, the position of the probe 10 on the accumulation layer and the measurement result by the measuring device at that position. And a display unit for displaying the charge distribution of the storage layer as an image of the sample. The light source 61 and the probe displacement measuring means 62 constitute a probe displacement measuring system, and the probe displacement measuring means 62 and a light detecting means for detecting the measurement light 22 reflected by the reflecting surface of the cantilever 21. Z direction control means for driving the moving means 12 so that the deflection amount of the cantilever 21 becomes constant by the output of the light detecting means.

【００２４】このような構成のＸ線顕微鏡において、撮
像板１を初期化した状態で前記Ｘ線光学系により試料54
にＸ線を照射し、この試料54を透過したＸ線を撮像板１
上に照射する。試料54の像は、撮像板１に電荷分布とし
て記録されるので、前述のようにこの電荷分布を測定す
ることで試料54の像を観察できる。その際、図６に示す
如く、容量測定手段60を真空容器56の外部に設置して撮
像板１を真空容器56から取り出さずに試料の像を観察す
ることができるが、容量測定手段60を真空容器56内に設
置して、この容器56の外部へ信号を導くようにした方が
容量測定の精度を高めることができる。いずれの場合
も、像の観察のために真空容器56内の真空を解除した
り、容器56内を真空に排気するという作業が不要にな
る。また、撮像板１を容器56に入れたまま記録された像
を消去することができるので、何回も撮像することがで
きる。例えば、試料54を移動させる機構を真空容器56内
に設けることで、試料54の異なる部分を１枚の撮像板で
観察することもできる。ただし、容量測定手段60が有す
る容量測定器は、カンチレバー21から離れた距離に設置
すると測定精度が低下するため、カンチレバー21の近く
に設置することが望ましい。In the X-ray microscope having such a structure, the sample 54 is taken by the X-ray optical system with the image pickup plate 1 initialized.
The sample plate 54 is irradiated with X-rays, and the X-rays transmitted through the sample 54 are picked up by the imaging plate 1.
Irradiate on. Since the image of the sample 54 is recorded as the charge distribution on the image pickup plate 1, the image of the sample 54 can be observed by measuring the charge distribution as described above. At that time, as shown in FIG. 6, the capacity measuring means 60 can be installed outside the vacuum container 56 to observe the image of the sample without taking out the imaging plate 1 from the vacuum container 56. The accuracy of the capacitance measurement can be improved by installing it in the vacuum container 56 and guiding the signal to the outside of the container 56. In either case, the work of releasing the vacuum in the vacuum container 56 and evacuating the inside of the container 56 to observe the image becomes unnecessary. Further, since the image recorded while the image pickup plate 1 is kept in the container 56 can be erased, the image can be picked up many times. For example, by providing a mechanism for moving the sample 54 inside the vacuum container 56, different portions of the sample 54 can be observed with one imaging plate. However, the capacity measuring device of the capacity measuring means 60 is preferably installed near the cantilever 21 because the accuracy of the measurement decreases when installed at a distance from the cantilever 21.

【００２５】ところで、実施例で電荷蓄積層として使用
したSiN のホール密度は、１平方nm当たり10個程度であ
るため、原理的には 256階調を26平方nmで実現できるこ
ととなり１画素を５×５nmとすることが可能となる。ま
た、撮像装置の分解能は探針の形状に依存し、数10nm程
度の分解能を達成することができる。この値は、従来使
用していた CCDや MCPよりも高い値である。By the way, since the hole density of SiN used as the charge storage layer in the embodiment is about 10 holes per square nm, it is possible to realize 256 gradations in 26 square nm in principle, and 5 pixels per pixel. It becomes possible to set it to × 5 nm. Further, the resolution of the image pickup device depends on the shape of the probe, and a resolution of several tens of nm can be achieved. This value is higher than the CCD and MCP used in the past.

【００２６】尚、上記実施例においては、撮像板上のＸ
線像がＸ線照射により生ずる光電子の分布として記録さ
れ、これを静電容量により検出する例であったが、本発
明においてはこれに限られるものではなく、Ｘ線照射に
よっ撮像板に生ずる物理的、化学的変化を、撮像板に所
定の微弱な力で接触させた探針を走査させながら、電流
や電圧あるいは誘電率や起電力として計測することによ
り、検出することも可能である。In the above embodiment, X on the image pickup plate is used.
A line image is recorded as a distribution of photoelectrons generated by X-ray irradiation, and this is an example of detecting this by electrostatic capacitance. However, the present invention is not limited to this, and it is generated on the imaging plate by X-ray irradiation. It is also possible to detect a physical or chemical change by measuring as a current, a voltage, a dielectric constant, or an electromotive force while scanning a probe brought into contact with the imaging plate with a predetermined weak force.

【００２７】[0027]

【発明の効果】以上のように本発明によれば、Ｘ線等の
電磁波の照射による物体像を、比較的簡単な構成であり
ながら、Ｘ線の分解能に対応したナノメータオーダーで
の極めて高分解能にて検出し得る実用的な走査型撮像装
置及び撮像方法が達成できる。また、上記実施例に示し
た如く、本発明による撮像のための操作はすべて真空中
で行うことができ、必要があれば撮像板を大気中に取り
出して保存することや、大気中で撮像装置により電荷分
布を測定することも可能である。さらに、一度使用した
撮像板に記録された像を消去することでこの撮像板を繰
り返し使用することができるため、コスト低減の効果も
奏するものである。As described above, according to the present invention, an object image produced by irradiation of electromagnetic waves such as X-rays has an extremely high resolution on the order of nanometers, which corresponds to the resolution of X-rays, while having a relatively simple structure. It is possible to achieve a practical scanning type image pickup apparatus and an image pickup method that can be detected by. Further, as shown in the above embodiment, all the operations for imaging according to the present invention can be performed in a vacuum, and if necessary, the imaging plate can be taken out and stored in the atmosphere, or the imaging device in the atmosphere. It is also possible to measure the charge distribution by. Furthermore, by erasing the image recorded on the image pickup plate that has been used once, the image pickup plate can be repeatedly used, and therefore, the effect of cost reduction can be obtained.

【００２８】尚、本発明の撮像板は、画像を記録するた
めの時間が短いため１秒間に何枚も撮像でき、動画を記
録する手段として使用することも可能である。Since the image pickup plate of the present invention takes a short time to record an image, it can take many images per second, and can be used as a means for recording a moving image.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の走査型撮像装置の概略構成図。FIG. 1 is a schematic configuration diagram of a scanning image pickup apparatus of the present invention.

【図２】本発明の撮像板の一実施例を示す概略断面図で
あり、探針の配置およびSiN からSiへの電子の移動を示
す説明図。FIG. 2 is a schematic cross-sectional view showing an embodiment of the image pickup plate of the present invention, and an explanatory view showing the arrangement of the probe and the movement of electrons from SiN 3 to Si.

【図３】撮像板でのＸ線の照射による光電子変換と光電
子のSiからSiN への電子の動きを示す説明図。FIG. 3 is an explanatory diagram showing photoelectron conversion by irradiation of X-rays on an image pickup plate and movement of photoelectrons from Si to SiN.

【図４】探針による電荷分布状態の測定状態とこれによ
り得られるパターンを示す概略説明図。FIG. 4 is a schematic explanatory view showing a measurement state of a charge distribution state by a probe and a pattern obtained thereby.

【図５】本発明による撮像装置の一実施例を示す概略構
成図。FIG. 5 is a schematic configuration diagram showing an embodiment of an image pickup apparatus according to the present invention.

【図６】本発明による撮像装置を備えたＸ線顕微鏡を示
す概略構成図。FIG. 6 is a schematic configuration diagram showing an X-ray microscope equipped with an imaging device according to the present invention.

【主要部分の符号の説明】[Explanation of symbols for main parts]

１ 撮像板 ２ 電荷蓄積層 ３ 絶縁層 ４ 変換層 １０ 探針 １１ 容量測定器（キャパシティセンサ） １２ 移動手段（ＸＹＺステージ） １５ 初期化電圧印加手段 ２０ 付勢手段 ２１ カンチレバー ２２ 測定光（レーザ光） ２３ 光検出手段 ２４ Ｚ方向制御手段 ３０ 電気特性検出手段 ４０ 走査手段 ６０ 容量測定手段 ６２ 探針変位測定手段 ７０ 制御手段 ８０ 表示手段 1 Imaging Plate 2 Charge Storage Layer 3 Insulating Layer 4 Conversion Layer 10 Probe 11 Capacitance Measuring Device (Capacity Sensor) 12 Moving Means (XYZ Stage) 15 Initializing Voltage Applying Means 20 Energizing Means 21 Cantilever 22 Measuring Light (Laser Light) ) 23 light detecting means 24 Z direction controlling means 30 electrical characteristic detecting means 40 scanning means 60 capacitance measuring means 62 probe displacement measuring means 70 control means 80 display means

Claims (5)

【特許請求の範囲】[Claims] 【請求項１】電磁波の照射に応じて電気的特性の変化を
生ずる撮像板と、該撮像板に接触して配置される探針
と、該探針と前記撮像板とを相対的に走査する走査手段
と、前記探針を前記撮像板に対して所定の付勢力によっ
て接触させる付勢手段と、前記探針により前記撮像板に
生ずる電気的特性の変化を検出する検出手段と、前記走
査手段の出力と前記検出手段の出力とから前記撮像板上
の電磁波分布情報を表示する表示手段とを有する走査型
撮像装置。1. An imaging plate that changes its electrical characteristics in response to electromagnetic wave irradiation, a probe arranged in contact with the imaging plate, and the probe and the imaging plate are relatively scanned. Scanning means, biasing means for bringing the probe into contact with the image pickup plate by a predetermined biasing force, detection means for detecting a change in electrical characteristics of the image pickup plate caused by the probe, and scanning means And a display unit for displaying electromagnetic wave distribution information on the image pickup plate from the output of the detection unit and the output of the detection unit. 【請求項２】前記撮像板は、電磁波が照射されると光電
子を放出する変換層、前記光電子を蓄積する非電導性物
質からなる電荷蓄積層、および前記変換層と電荷蓄積層
との間に設けられた絶縁層とを有することを特徴とする
請求項１記載の走査型撮像装置。2. The image pickup plate comprises a conversion layer that emits photoelectrons when irradiated with electromagnetic waves, a charge storage layer made of a non-conductive material that stores the photoelectrons, and between the conversion layer and the charge storage layer. The scanning image pickup apparatus according to claim 1, further comprising an insulating layer provided. 【請求項３】電磁波の照射に応じて電気的特性の変化を
生ずる撮像板上に、探針を所定の付勢力によって接触さ
せるステップと、該探針と該撮像板とを相対的に走査し
つつ前記探針により前記撮像板に生ずる電気的特性の変
化を検出するステップと、前記走査手段の出力と前記検
出手段の出力とから前記撮像板上の電磁波分布情報を表
示するステップとを有することを特徴とする撮像方法。3. A step of bringing a probe into contact with an imaging plate, which changes its electrical characteristics in response to the irradiation of electromagnetic waves, with a predetermined urging force, and relatively scanning the probe and the imaging plate. At the same time, the method further includes the step of detecting a change in electrical characteristics of the image pickup plate caused by the probe, and the step of displaying electromagnetic wave distribution information on the image pickup plate from the output of the scanning unit and the output of the detection unit. And an imaging method. 【請求項４】前記撮像板は、電磁波が照射されると光電
子を放出する変換層、前記光電子を蓄積する非電導性物
質からなる電荷蓄積層、および前記変換層と電荷蓄積層
との間に設けられた絶縁層とを有し、前記電気的特性の
変化を検出するステップは、電磁波が照射されると光電
子を放出する変換層を負に帯電させるステップと、該放
出された光電子を蓄積する非電導性物質からなる蓄積層
を正に帯電させた状態で前記変換層に所望の画像の情報
を含んだ電磁波を照射するステップと、該電磁波の照射
によって放出された前記光電子を蓄積層に蓄積させて電
荷分布を形成させるステップと、前記蓄積層に形成され
た電荷分布を測定するステップとを有することを特徴と
する撮像方法。4. The image pickup plate comprises a conversion layer which emits photoelectrons when irradiated with an electromagnetic wave, a charge storage layer made of a non-conductive material which stores the photoelectrons, and a space between the conversion layer and the charge storage layer. And a step of detecting a change in the electrical characteristics, the conversion layer emitting a photoelectron when irradiated with an electromagnetic wave is negatively charged, and the emitted photoelectron is accumulated. Irradiating the conversion layer with an electromagnetic wave containing desired image information in a state where the storage layer made of a non-conductive material is positively charged, and storing the photoelectrons emitted by the irradiation of the electromagnetic wave in the storage layer. And a step of measuring the charge distribution formed in the storage layer. 【請求項５】電磁波が照射されると光電子を放出する変
換層、前記光電子を蓄積する非電導性物質からなる電荷
蓄積層、および前記変換層と電荷蓄積層との間に設けら
れた絶縁層とを有することを特徴とする撮像板。5. A conversion layer that emits photoelectrons when irradiated with electromagnetic waves, a charge storage layer made of a non-conductive material that stores the photoelectrons, and an insulating layer provided between the conversion layer and the charge storage layer. And an image pickup plate.
JP5146311A 1992-06-19 1993-06-17 Scanning type image pickup device, image pickup method, and image pickup plate used therefor Pending JPH0676771A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP5146311A JPH0676771A (en) 1992-06-19 1993-06-17 Scanning type image pickup device, image pickup method, and image pickup plate used therefor
US08/359,473 US5464977A (en) 1993-03-10 1994-12-20 Scanning optical detection apparatus and method, and photoelectric conversion medium applied thereto

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4-160530 1992-06-19
JP16053092 1992-06-19
JP5146311A JPH0676771A (en) 1992-06-19 1993-06-17 Scanning type image pickup device, image pickup method, and image pickup plate used therefor

Publications (1)

Publication Number Publication Date
JPH0676771A true JPH0676771A (en) 1994-03-18

Family

ID=26477206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5146311A Pending JPH0676771A (en) 1992-06-19 1993-06-17 Scanning type image pickup device, image pickup method, and image pickup plate used therefor

Country Status (1)

Country Link
JP (1) JPH0676771A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008077978A (en) * 2006-09-21 2008-04-03 Hitachi Medical Corp X-ray bulb, x-ray camera, and electrostatic charge measuring device of vacuum insulation equipment
US8441474B2 (en) 2008-06-25 2013-05-14 Aristocrat Technologies Australia Pty Limited Method and system for setting display resolution

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008077978A (en) * 2006-09-21 2008-04-03 Hitachi Medical Corp X-ray bulb, x-ray camera, and electrostatic charge measuring device of vacuum insulation equipment
US8441474B2 (en) 2008-06-25 2013-05-14 Aristocrat Technologies Australia Pty Limited Method and system for setting display resolution

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