JPH0676276B2 - Chemical vapor deposition equipment - Google Patents
Chemical vapor deposition equipmentInfo
- Publication number
- JPH0676276B2 JPH0676276B2 JP10665289A JP10665289A JPH0676276B2 JP H0676276 B2 JPH0676276 B2 JP H0676276B2 JP 10665289 A JP10665289 A JP 10665289A JP 10665289 A JP10665289 A JP 10665289A JP H0676276 B2 JPH0676276 B2 JP H0676276B2
- Authority
- JP
- Japan
- Prior art keywords
- stage
- gas
- semiconductor wafer
- exhaust
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、被処理物としての半導体ウエハに薄膜を形成
する場合に使用して好適な化学気相成長装置に関する。TECHNICAL FIELD The present invention relates to a chemical vapor deposition apparatus suitable for use in forming a thin film on a semiconductor wafer as an object to be processed.
従来、この種の化学気相成長装置は第４図に示すように
構成されている。図において、（２）は反応生成膜（図
示せず）が形成される半導体ウエハ（１）を保持する加
熱用のステージ、（３）はこのステージ（２）を加熱す
るためのヒーター、（４）は反応室、（５）はステージ
（２）と間隔をもって設けられ、反応ガスＢを供給する
ための多数のガス吹出口（6a），（6b）を有するガスヘ
ッド、（７）は反応室（４）を囲む反応室側壁、（10）
は反応室側壁（７）に設けられ排気Ａを導出するための
排気口、（14）はステージ（２）の熱が伝導により外部
に逃げるのを防ぐためと、ステージを回転させるための
ステージすきまである。Conventionally, this type of chemical vapor deposition apparatus is constructed as shown in FIG. In the figure, (2) is a heating stage for holding the semiconductor wafer (1) on which a reaction product film (not shown) is formed, (3) is a heater for heating this stage (2), and (4) ) Is a reaction chamber, (5) is a gas head having a large number of gas outlets (6a), (6b) for supplying the reaction gas B, which is provided at a distance from the stage (2), and (7) is a reaction chamber. Reaction chamber side wall surrounding (4), (10)
Is an exhaust port provided on the side wall (7) of the reaction chamber for leading out the exhaust gas A, and (14) is a stage clearance for preventing the heat of the stage (2) from escaping to the outside by conduction and for rotating the stage. Up to.
このように構成された従来の化学気相成長装置において
は予めステージ（２）上で加熱された半導体ウエハ
（１）に対して、ガス吹出口（６）から吹き出された反
応ガスＢを供給することにより、半導体ウエハ（１）上
に反応生成膜を形成することができる。In the conventional chemical vapor deposition apparatus configured as described above, the reaction gas B blown out from the gas outlet (6) is supplied to the semiconductor wafer (1) heated on the stage (2) in advance. As a result, a reaction product film can be formed on the semiconductor wafer (1).
ところで、この種の化学気相成長装置においては反応生
成膜の成長速度がガスヘッド（５）より半導体ウエハ
（１）に供給されるガス濃度に依存することから、反応
生成膜の膜厚を均一にする場合に、半導体ウエハ（１）
上の任意の部位で反応ガスＢの濃度を安定かつ均一にす
るために反応ガスＢの流れを安定かつ均一にする必要が
ある。By the way, in this type of chemical vapor deposition apparatus, since the growth rate of the reaction product film depends on the concentration of the gas supplied from the gas head (5) to the semiconductor wafer (1), the film thickness of the reaction product film is uniform. Semiconductor wafer (1)
It is necessary to make the flow of the reaction gas B stable and uniform in order to make the concentration of the reaction gas B stable and uniform at any of the above positions.
また、反応ガスＢは気相反応により反応生成物Ｄを生
じ、これが反応室内壁各部に付着し、そののち内壁部よ
りはがれ落ちて、半導体ウエハ上に付着するので、製品
の歩留り低下の原因となっている。このため反応生成物
Ｄを排気Ａとともに反応室（４）から外へ出す必要があ
る。Further, the reaction gas B produces a reaction product D by a gas phase reaction, which adheres to various parts of the inner wall of the reaction chamber, and then peels off from the inner wall part and adheres to the semiconductor wafer, which causes a decrease in product yield. Has become. Therefore, it is necessary to discharge the reaction product D together with the exhaust gas A from the reaction chamber (4).
ところが、従来の化学気相成長装置においてはステージ
（２）によって加熱されることによって比重が軽くな
り、反応室（４）の上方に移動しようとする反応ガスＢ
と、反応室側壁（７）に設けられた排気口（10）での排
気Ａとの方向が一致していないため、反応室（４）内で
の反応ガスＢの流れを乱していた。この結果、半導体ウ
エハ（１）表面での反応ガスＢの流れが不均一となり、
反応ガス濃度が不均一となるため、均一な膜厚を持つ反
応生成膜を得ることができないという問題があった。However, in the conventional chemical vapor deposition apparatus, the specific gravity is reduced by being heated by the stage (2), and the reaction gas B which is trying to move above the reaction chamber (4).
And the direction of the exhaust gas A at the exhaust port (10) provided on the side wall (7) of the reaction chamber did not match, the flow of the reaction gas B in the reaction chamber (4) was disturbed. As a result, the flow of the reaction gas B on the surface of the semiconductor wafer (1) becomes non-uniform,
Since the reaction gas concentration becomes non-uniform, there is a problem that a reaction product film having a uniform film thickness cannot be obtained.
また、反応室（４）内において、反応ガスＢの流れが乱
れて、反応室（４）内各部に接するため、気相反応によ
って生じた反応生成物Ｄが反応室（４）内部に多く付着
するという問題があった。Further, in the reaction chamber (4), the flow of the reaction gas B is disturbed and comes into contact with each part in the reaction chamber (4), so that a large amount of the reaction product D generated by the gas phase reaction adheres inside the reaction chamber (4). There was a problem of doing.
本発明は、このような事情に鑑みてなされたもので、反
応室内の反応ガスの流れを安定かつ均一化することがで
き、もって均一の膜厚をもつ反応生成膜を得ることがで
き、また反応室内部への異物の付着を減少させることの
できる化学気相成長装置を提供するものである。The present invention has been made in view of such circumstances, and it is possible to stabilize and uniformize the flow of the reaction gas in the reaction chamber, and thus to obtain a reaction product film having a uniform film thickness. Provided is a chemical vapor deposition apparatus capable of reducing the adhesion of foreign matter to the inside of a reaction chamber.
本発明に係る化学気相成長装置は、反応ガスによって生
成膜が形成される半導体ウエハを保持するステージと、
このステージと対向し間隔をもって設けられ、反応ガス
を供給するガス吹出口を有するガスヘッドと、前記ステ
ージと同一面かそれ以上の部所でステージを囲む全周
に、同ステージに対して外側斜め上方向の排気口を設け
たものである。A chemical vapor deposition apparatus according to the present invention includes a stage for holding a semiconductor wafer on which a product film is formed by a reaction gas,
A gas head having a gas outlet for supplying a reaction gas, which is provided facing the stage with a space, and the entire circumference of the stage surrounding the stage on the same plane as the stage or above, and obliquely outward to the stage. It is provided with an upward exhaust port.
また、排気口の先に前記排気口の開口部の断面積に比べ
て十分大きな断面積を有する排気室を設け、かつ排気室
より排気が出ていく排気排出口と前記排気口との間に抵
抗板を設けたものである。Further, an exhaust chamber having a cross-sectional area that is sufficiently larger than the cross-sectional area of the opening of the exhaust port is provided at the end of the exhaust port, and the exhaust chamber discharges exhaust gas from the exhaust port and the exhaust port. A resistance plate is provided.
また、ステージと前記排気口との間のステージ外縁部全
周より外側ななめ下方向に不活性ガスを均一に吹き出す
手段を設けたものである。Further, there is provided a means for uniformly blowing out the inert gas in the downward licking direction outside the entire outer periphery of the stage between the stage and the exhaust port.
本発明においては、ステージに対して全外周に設けられ
た外側斜め上方向の排気口によって、ガスヘッドより半
導体ウエハに供給された反応ガスの流れる方向を乱すこ
となく排気することがきる。さらに、排気室内に抵抗板
を設けたことにより排気室内での排気の流速が均一とな
り、排気口での排気の流れを均一にできるので、半導体
ウエハ上における反応ガス濃度を均一にでき、均一な膜
厚の生成膜を得ることができる。According to the present invention, the exhaust gas is provided obliquely upward and outward on the entire outer circumference of the stage, so that the reaction gas supplied from the gas head to the semiconductor wafer can be exhausted without disturbing the flowing direction. Further, since the resistance plate is provided in the exhaust chamber, the flow velocity of the exhaust gas in the exhaust chamber becomes uniform and the flow of the exhaust gas in the exhaust port can be made uniform, so that the reaction gas concentration on the semiconductor wafer can be made uniform and uniform. It is possible to obtain a generated film having a film thickness.
さらに、ステージ外縁部全周より外側ななめ下方向に不
活性ガスを均一に吹き出すことにより、ステージ外縁部
の反応ガスの流れを排気口方向にのみ導くことができる
ので、反応室内壁に付着する異物を減少させることがで
きる。Furthermore, since the inert gas is blown out evenly downward from the entire circumference of the outer edge of the stage, the flow of the reaction gas at the outer edge of the stage can be guided only toward the exhaust port. Can be reduced.
以下、本発明を図に示す実施例によって詳細に説明す
る。Hereinafter, the present invention will be described in detail with reference to the embodiments shown in the drawings.
第１図は本発明の一実施例の化学気相成長装置を示す断
面図、第２図は第１図の化学気相成長装置の排気部の断
面を表わす平面図、第３図は第１図のステージ端部と排
気口部を示す拡大図である。FIG. 1 is a sectional view showing a chemical vapor deposition apparatus according to an embodiment of the present invention, FIG. 2 is a plan view showing a sectional view of an exhaust portion of the chemical vapor deposition apparatus of FIG. 1, and FIG. It is an enlarged view which shows the stage edge part and exhaust port part of a figure.
図中、第４図と同一の部材については同一の符号を付
し、説明は省略する。第１図、第２図、第３図におい
て、（８）は内部に排気室（９）を有し、ステージ
（２）の全外周を囲むように設けられた排気リング、
（10）は排気リング（８）下面の内側端部に全周ステー
ジより外側斜め上方向に設けられ、排気室（９）に通じ
る排気口、（11）は排気室（９）より排気Ａを排気フラ
ンジ（12）を通して排出する排気排出口、（13）は排気
室（９）内で排気口（10）と排気排出口（11）との間に
設けられて、排気Ａを均一とするための排気抵抗板であ
り、Ｃはステージすきま（14）からステージより外側な
なめ下方向に吹き出し、反応ガスＢが排気リング（８）
に当たらずに排気口（10）へ流れ、排気Ａの方向と一致
させるためのN2ガス、（16）はN2ガスＣを均一に吹き出
すために、内側に複数のN2ガス吹出口（15）を有する中
空のN2ガス吹出リングである。In the figure, the same members as those in FIG. 4 are designated by the same reference numerals, and the description thereof will be omitted. In FIG. 1, FIG. 2, and FIG. 3, (8) has an exhaust chamber (9) inside, and an exhaust ring provided so as to surround the entire outer circumference of the stage (2),
(10) is provided at an inner end portion of the lower surface of the exhaust ring (8) obliquely upward from the entire circumference stage, and is an exhaust port communicating with the exhaust chamber (9), and (11) is for exhaust A from the exhaust chamber (9). The exhaust outlet (13) for exhausting through the exhaust flange (12) is provided in the exhaust chamber (9) between the exhaust outlet (10) and the exhaust outlet (11) to make the exhaust A uniform. Is an exhaust resistance plate of C, and C is blown out from the stage clearance (14) to the outside of the stage and licks downward, and the reaction gas B is discharged to the exhaust ring (8).
N 2 gas that flows to the exhaust port (10) without hitting the N 2 gas to match the direction of the exhaust A, and (16) blows N 2 gas C uniformly, so that multiple N 2 gas outlets ( 15) A hollow N 2 gas blowing ring having 15).
このように構成された化学気相成長装置においては、反
応ガスＢは、ガスヘッド（５）のガス吹出口（６）か
ら、ステージ（２）に保持、加熱された半導体ウエハ
（１）に供給され、半導体ウエハ（１）上に反応生成膜
を形成する。反応生成膜形成後の反応ガスＢは加熱され
たことにより比重が軽くなっているのでステージ（２）
外縁部より外側ななめ上方向へ移動しようとするが、排
気口（10）をステージ（２）外周部全周に外側ななめ上
方向に開口して設けたので、反応ガスＢの自然な流れを
乱すことなく排気することが出来る。その結果、反応ガ
スＢに含まれている気相反応による反応生成物Ｄを反応
室内壁（４）に付着させることもない。In the chemical vapor deposition apparatus configured as described above, the reaction gas B is supplied from the gas outlet (6) of the gas head (5) to the semiconductor wafer (1) which is held and heated on the stage (2). Then, a reaction product film is formed on the semiconductor wafer (1). Since the reaction gas B after the formation of the reaction product film has a lower specific gravity due to being heated, the stage (2)
Although it tries to move upward from the outer edge of the outer rim, the exhaust port (10) is provided so as to open upward toward the outer lick over the entire outer circumference of the stage (2), which disturbs the natural flow of the reaction gas B. You can exhaust without. As a result, the reaction product D contained in the reaction gas B due to the gas phase reaction is not attached to the inner wall (4) of the reaction chamber.
また、第２図に示すように、排気口（10）と排気排出口
（11）の間の排気室（９）内に排気抵抗板（13）を設け
ることにより、排気排出口（11）の近傍部における排気
Ａの流速を弱め排気室（９）内での流速を一定にし、排
気口（10）での排気Ａを均一とすることができる。その
結果、ステージ（２）下での反応ガスＢの流れを均一に
でき、半導体ウエハ（１）における反応生成膜の膜厚を
均一にできる。Further, as shown in FIG. 2, by providing an exhaust resistance plate (13) in the exhaust chamber (9) between the exhaust port (10) and the exhaust exhaust port (11), The flow velocity of the exhaust gas A in the vicinity can be weakened to keep the flow velocity in the exhaust chamber (9) constant, and the exhaust gas A at the exhaust port (10) can be made uniform. As a result, the flow of the reaction gas B under the stage (2) can be made uniform, and the film thickness of the reaction product film on the semiconductor wafer (1) can be made uniform.
また、第１図に示す様にステージ（２）と排気リング
（８）との間のステージすきま（14）の上方に、内側に
複数のN2ガス吹出口（15）を有する中空のN2ガス吹出リ
ング（16）を設け、ステージすきま（14）にN2ガスＣを
吹き出す構造としたので、第３図に示すように、ステー
ジすきま（14）より外側のななめ下向きにN2ガスＣが均
一に吹き出し、反応ガスＢの流れの方向を、排気口（1
0）の位置での排気Ａとの方向と一致させるようにした
ので、反応ガスＢの排気はより良好となり反応ガスＢ中
に含まれる反応生成物Ｄを反応室内壁（７）、排気リン
グ（８）に付着させることなく排気することができる。Moreover, as shown in FIG. 1, a hollow N 2 having a plurality of N 2 gas outlets (15) inside is provided above the stage clearance (14) between the stage (2) and the exhaust ring (8). Since the gas blow-out ring (16) is provided and the N 2 gas C is blown out into the stage clearance (14), as shown in FIG. 3, the N 2 gas C is downwardly licked outside the stage clearance (14). Evenly blow the reaction gas B in the direction of the exhaust port (1
Since the direction of the exhaust gas A coincides with that of the exhaust gas A at the position (0), the exhaust of the reaction gas B becomes better, and the reaction product D contained in the reaction gas B is transferred to the reaction chamber inner wall (7) and the exhaust ring ( It can be exhausted without adhering to 8).
なお、本実施例においては、ステージすきま（14）よ
り、N2ガスＣを吹き出したが、本発明はこれに限定され
るものではなく、成膜反応に関与しない別の不活性ガス
であってもよく、このガスの吹出部をステージすきま
（14）とせずに、別に吹出口を排気リング（８）のステ
ージ近傍部に設けてもよい。In addition, in the present embodiment, the N 2 gas C was blown out from the stage clearance (14), but the present invention is not limited to this, and another inert gas that does not participate in the film formation reaction may be used. Alternatively, the gas outlet may be provided separately in the vicinity of the stage of the exhaust ring (8) instead of forming the stage clearance (14).
また、本実施例においては、第２図に排気排出口（11）
が２箇所の例を示したが、排気排出口は２箇所以上であ
ってもよく、それに対して排気抵抗板（13）を各々設け
てもよい。また排気抵抗板（13）の形状は任意の形状と
する。In addition, in this embodiment, the exhaust outlet (11) is shown in FIG.
However, the number of exhaust outlets may be two or more, and an exhaust resistance plate (13) may be provided for each. The shape of the exhaust resistance plate (13) is arbitrary.
以上説明したように本発明によれば、反応室上部に反応
ガスによって生成膜が形成される半導体ウエハを保持す
る加熱用のステージと、このステージに対向する反応室
下部に多数のガス吹出口を有するガスヘッドを備え、こ
のステージのウエハ保持面と同じ高さ以上の位置で、同
ステージを囲む全外周部に同ステージに対して外側斜め
上方向の排気口を設け、全周に均一な排気を導出するよ
うにしたので、ガスヘッドより半導体ウエハに供給され
た反応ガスによる自然な流れの方向と排気との方向が一
致し、反応ガスの流れを乱すことなく、反応室の内壁等
に当てることなく排気することができるから、半導体ウ
エハ上のガス流れを安定かつ均一化することができ、均
一の膜厚をもつ反応生成膜を得ることと、気相反応によ
って生じた反応生成物の反応室内への付着を減少させる
ことができる。As described above, according to the present invention, a heating stage for holding a semiconductor wafer on which a product film is formed by a reaction gas is held in the upper part of the reaction chamber, and a large number of gas outlets are provided in the lower part of the reaction chamber facing the stage. Equipped with a gas head, and at the same height or higher as the wafer holding surface of this stage, an exhaust port diagonally outward and upward with respect to the stage is provided in the entire outer peripheral portion surrounding the stage, and uniform exhaust is provided over the entire periphery. Since the natural flow direction of the reaction gas supplied to the semiconductor wafer from the gas head and the exhaust direction are the same, the reaction gas is applied to the inner wall of the reaction chamber without disturbing the flow of the reaction gas. The gas flow on the semiconductor wafer can be made stable and uniform because the gas can be exhausted without any action, and a reaction product film with a uniform film thickness and the reaction product generated by the gas phase reaction can be obtained. It is possible to reduce the adhesion to the reaction chamber of the object.
また、排気口の先に排気口の開口部の断面積に比べて十
分大きな断面積を有する排気室を設け、その排気室の排
気排出口の近傍に抵抗板を設けたので、排出口附近での
み反応ガスの流速が速かったのを緩和することができ、
排気室内での流速が均一となり、排気口における排気の
流れを均一にできる。その結果、半導体ウエハ上におけ
る反応ガス濃度が均一となり、均一な膜厚の生成膜が得
られる。In addition, an exhaust chamber with a cross-sectional area that is sufficiently larger than the cross-sectional area of the opening of the exhaust port was provided at the tip of the exhaust port, and a resistance plate was provided near the exhaust outlet of the exhaust chamber, so near the exhaust port. Only the flow velocity of the reaction gas can be eased,
The flow velocity in the exhaust chamber becomes uniform, and the flow of exhaust gas at the exhaust port can be made uniform. As a result, the reaction gas concentration on the semiconductor wafer becomes uniform, and a formed film having a uniform film thickness can be obtained.
また、ステージ外縁部全周より外側ななめ下方向に不活
性ガスを均一に吹き出す様にしたので、ステージ外縁部
の反応ガスを排気口にのみ導くことが出来、反応室内壁
への反応生成物の付着を減少させることが出来る。In addition, since the inert gas is blown out uniformly in the downward licking direction outside the entire outer edge of the stage, the reaction gas at the outer edge of the stage can be introduced only to the exhaust port, and the reaction product on the inner wall of the reaction chamber Adhesion can be reduced.
第１図は、本発明の一実施例の化学気相成長装置を示す
断面図、第２図は第１図の化学気相成長装置の排気部の
断面を表わす平面図、第３図は第１図におけるステージ
端部と排気口部を示す拡大図、第４図は従来の化学気相
成長装置を示す断面図である。 １……半導体ウエハ、２……ステージ、３……ヒータ
ー、４……反応室、５……ガスヘッド、6a、6b……ガス
吹出口、７……反応室側壁、８……排気リング、９……
排気室、10……排気口、11……排気排出口、12……排気
フランジ、13……排気抵抗板、14……ステージすきま、
15……N2吹出口、16……N2吹出リング、Ａ……排気、、
Ｂ……反応ガス、Ｃ……N2ガス、Ｄ……反応生成物 図中、同一符号は同一または相当部分である。FIG. 1 is a cross-sectional view showing a chemical vapor deposition apparatus according to an embodiment of the present invention, FIG. 2 is a plan view showing a cross section of an exhaust portion of the chemical vapor deposition apparatus of FIG. 1, and FIG. FIG. 1 is an enlarged view showing a stage end portion and an exhaust port portion in FIG. 1, and FIG. 4 is a sectional view showing a conventional chemical vapor deposition apparatus. 1 ... Semiconductor wafer, 2 ... Stage, 3 ... Heater, 4 ... Reaction chamber, 5 ... Gas head, 6a, 6b ... Gas outlet, 7 ... Reaction chamber side wall, 8 ... Exhaust ring, 9 ……
Exhaust chamber, 10 ... Exhaust port, 11 ... Exhaust outlet port, 12 ... Exhaust flange, 13 ... Exhaust resistance plate, 14 ... Stage clearance,
15 …… N 2 outlet, 16 …… N 2 outlet ring, A …… exhaust,
B ... Reactant gas, C ... N 2 gas, D ... Reaction product In the figures, the same symbols are the same or corresponding parts.
Claims (3)
体ウエハを、枚葉で処理する反応室と、前記反応室の下
方に、半導体ウエハに反応ガスを供給するガスヘッド
と、前記反応室の上方に、前記ガスヘッドに半導体ウエ
ハの主面を対向するように保持、加熱するステージと、
前記ステージの半導体ウエハ保持面と同じ高さ以上の位
置で、同ステージを囲む全外周部に、同ステージに対し
て外側斜め上方向の排気口を設けたことを特徴とする化
学気相成長装置。1. A reaction chamber for processing a semiconductor wafer, in which a film formed by a reaction gas is formed, in a single wafer, a gas head for supplying the reaction gas to the semiconductor wafer below the reaction chamber, and a reaction chamber for the reaction chamber. A stage for holding and heating the semiconductor head so that the main surface of the semiconductor wafer is opposed to the gas head,
A chemical vapor deposition apparatus characterized in that an exhaust port obliquely outward and upward with respect to the stage is provided at the same height or higher as the semiconductor wafer holding surface of the stage and at the entire outer peripheral portion surrounding the stage. .
体ウエハを、枚葉で処理する反応室と、前記反応室の下
方に半導体ウエハに反応ガスを供給するガスヘッドと、
前記反応室の上方に前記ガスヘッドに半導体ウエハの主
面を対向するように保持、加熱するステージと、前記ス
テージの半導体ウエハ保持面と同じ高さ以上の位置で、
同ステージを囲む全外周部に、同ステージに対して外側
斜め上方向の排気口を設け、前期排気口より排気される
排気の先方向に、前記排気口の開口部の断面積に比べて
大きな容積を有する排気室を設け、さらに前記排気室よ
り外部に排気する排気排出口と前記排気口との間に抵抗
板を設けたことを特徴とする化学気相成長装置。2. A reaction chamber for processing a semiconductor wafer, in which a film formed by the reaction gas is formed, in a single wafer, and a gas head for supplying the reaction gas to the semiconductor wafer below the reaction chamber.
A stage for holding and heating the main surface of the semiconductor wafer so as to face the gas head above the reaction chamber, and a position at the same height or higher as the semiconductor wafer holding surface of the stage,
An exhaust port that is diagonally outward and upward with respect to the stage is provided on the entire outer peripheral part surrounding the stage, and is larger than the cross-sectional area of the opening of the exhaust port in the forward direction of the exhaust gas exhausted from the exhaust port in the previous period. A chemical vapor deposition apparatus characterized in that an exhaust chamber having a volume is provided, and a resistance plate is provided between the exhaust outlet for exhausting air from the exhaust chamber and the exhaust port.
導体ウエハを、枚葉で処理する反応室と、前記反応室の
下方に、半導体ウエハに反応ガスを供給するガスヘッド
と、前記反応室の上方に、前記ガスヘッドに半導体ウエ
ハの主面を対向するように保持、加熱するステージと、
前記ステージの半導体ウエハ保持面と同じ高さ以上の位
置で、同ステージを囲む全外周部に、同ステージに対し
て外側斜め上方向の排気口を設け、ステージと前記排気
口との間のステージ外縁部全周より外側ななめ下方向に
不活性ガスを均一に吹き出すための不活性ガス供給手段
を設けたことを特徴とする化学気相成長装置。3. A reaction chamber in which a semiconductor wafer on which a product film is formed by a reaction gas is processed by a single wafer, a gas head below the reaction chamber for supplying the reaction gas to the semiconductor wafer, and the reaction chamber. A stage for holding and heating the main surface of the semiconductor wafer facing the gas head so as to face the gas head,
An exhaust port that is obliquely outward and upward with respect to the stage is provided at the same height or higher as the semiconductor wafer holding surface of the stage, at the entire outer peripheral portion surrounding the stage, and the stage between the stage and the exhaust port is provided. A chemical vapor deposition apparatus comprising an inert gas supply means for uniformly blowing out an inert gas in a downward licking direction outside the entire circumference of the outer edge portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10665289A JPH0676276B2 (en) | 1989-04-25 | 1989-04-25 | Chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10665289A JPH0676276B2 (en) | 1989-04-25 | 1989-04-25 | Chemical vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02283696A JPH02283696A (en) | 1990-11-21 |
| JPH0676276B2 true JPH0676276B2 (en) | 1994-09-28 |
Family
ID=14439045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10665289A Expired - Fee Related JPH0676276B2 (en) | 1989-04-25 | 1989-04-25 | Chemical vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0676276B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04348031A (en) * | 1990-12-28 | 1992-12-03 | Mitsubishi Electric Corp | Chemical vapor growth equipment |
| JP2763222B2 (en) * | 1991-12-13 | 1998-06-11 | 三菱電機株式会社 | Chemical vapor deposition method, chemical vapor deposition processing system and chemical vapor deposition apparatus therefor |
| JPH0697080A (en) * | 1992-09-10 | 1994-04-08 | Mitsubishi Electric Corp | Reaction chamber for chemical, vapor growth apparatus and chemical vapor growth apparatus using the same |
| JP2934565B2 (en) * | 1993-05-21 | 1999-08-16 | 三菱電機株式会社 | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
-
1989
- 1989-04-25 JP JP10665289A patent/JPH0676276B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02283696A (en) | 1990-11-21 |
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