JPH0669785U - Temperature measurement structure of silicon wafer etc. by thermocouple - Google Patents
Temperature measurement structure of silicon wafer etc. by thermocoupleInfo
- Publication number
- JPH0669785U JPH0669785U JP1784393U JP1784393U JPH0669785U JP H0669785 U JPH0669785 U JP H0669785U JP 1784393 U JP1784393 U JP 1784393U JP 1784393 U JP1784393 U JP 1784393U JP H0669785 U JPH0669785 U JP H0669785U
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- Prior art keywords
- silicon wafer
- thermocouple
- temperature
- glass
- mounting hole
- Prior art date
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Abstract
(57)【要約】
【目的】 計測中にシリコンウェハーから熱電対素線が
外れることがなく、しかも減圧下においても正確な温度
測定を行うことができるものである。
【構成】 シリコンウェハー４等の表面に有底の取付穴
５を設け、この取付穴５内に熱電対素線２の先端を位置
させた状態で、接着部材６で固定したことを特徴とする
ものである。
(57) [Summary] [Purpose] The thermocouple wire does not come off from the silicon wafer during measurement, and moreover, accurate temperature measurement can be performed even under reduced pressure. [Structure] A bottomed mounting hole 5 is provided on the surface of a silicon wafer 4 or the like, and the tip of the thermocouple wire 2 is positioned in the mounting hole 5 and fixed with an adhesive member 6. It is a thing.
Description
【０００１】[0001]
本考案は、半導体の各種処理装置、例えば減圧プラズマスパッタリング装置で 処理するシリコンウェハーの加熱温度分布を予め調査するために使用される熱電 対によるシリコンウェハー等の温度計測構造に関する。 The present invention relates to a temperature measurement structure for a silicon wafer or the like by a thermocouple used for previously investigating a heating temperature distribution of a silicon wafer processed by various semiconductor processing apparatuses, for example, a low pressure plasma sputtering apparatus.
【０００２】[0002]
従来、シリコンウェハーの加熱温度分布を計測する場合、図２に示すように例 えばＫ熱電対又はＫＰ−ＫＮ熱電対等の熱電対ａにおける熱電対素線ｂの先端を シリコンウェハーｃ表面に当接させてセラミックセメントｄ等でシリコンウェハ ーｃに接着し、素線間の絶縁のためにセラミック製の絶縁碍子又はガラススリー ブ等の絶縁材ｅを熱電対素線ｂに外被させたものが用いられている。 Conventionally, when measuring the heating temperature distribution of a silicon wafer, as shown in FIG. 2, the tip of a thermocouple wire b in a thermocouple a such as a K thermocouple or a KP-KN thermocouple is brought into contact with the surface of the silicon wafer c. Then, it is adhered to the silicon wafer c with ceramic cement d or the like, and an insulating material e such as a ceramic insulator or a glass sleeve is coated on the thermocouple wire b for insulation between the wires. It is used.
【０００３】[0003]
しかし、従来の方法では、熱電対素線ｂの先端をシリコンウェハーｃ表面に 当接させて接着性の悪いセラミックセメントｄ等でシリコンウェハーｃに接着し ているだけであるので、計測中に熱電対素線ｂが外れて大きな計測誤差が生じ、 信頼性が低く、また接着剤として用いるセラミックセメントは、本質的にポー ラスな材料であるため、大気圧の温度計測の場合には、気体の熱伝導で比較的測 定された温度の信頼性は高いが、減圧下においては気体の熱伝導がなくなり、物 体間の熱伝導と輻射だけでシリコンウェハーｃの温度計測を行うこことなるため 、測定される温度は実際のシリコンウェハーｃの温度よりも低い温度が指示され 、更に熱電対素線ｂの熱容量に比較して大きな熱容量をもつセラミック製の絶 縁碍子又はガラススリーブ等の絶縁材ｅを熱電対素線ｂに外被させているため、 この絶縁材ｅへの熱伝導による冷却により低い温度が指示されるという問題点が あった。 However, in the conventional method, since the tip of the thermocouple wire b is only brought into contact with the surface of the silicon wafer c and adhered to the silicon wafer c with the ceramic cement d or the like having poor adhesiveness, the thermoelectric power is not applied during measurement. Since the pair of wires b is dislocated and a large measurement error occurs, the reliability is low, and the ceramic cement used as an adhesive is essentially a porous material. The reliability of the temperature measured by heat conduction is relatively high, but the heat conduction of gas disappears under reduced pressure, and the temperature of the silicon wafer c is measured only by heat conduction and radiation between substances. The measured temperature is lower than the actual temperature of the silicon wafer c, and has a large heat capacity compared with the heat capacity of the thermocouple wire b. Since the insulation material e of the probe such as to envelope the thermocouple element b, a lower temperature by the cooling due to heat conduction to the insulation material e is a problem that is indicated.
【０００４】 そこで、本考案は、計測中にシリコンウェハーから熱電対素線が外れることが なく、しかも減圧下においても正確な温度測定を行うことができる熱電対による シリコンウェハー等の温度計測構造を提供しようとするものである。Therefore, the present invention provides a temperature measurement structure for a silicon wafer or the like by a thermocouple, which does not cause the thermocouple wire to come off from the silicon wafer during measurement and can perform accurate temperature measurement even under reduced pressure. It is the one we are trying to provide.
【０００５】[0005]
上記目的を達成するために、シリコンウェハー等の表面に有底の取付穴を設け 、この取付穴内に熱電対素線の先端を位置させた状態で、接着部材で固定したこ とを特徴とするものである。 In order to achieve the above object, a bottomed mounting hole is provided on the surface of a silicon wafer or the like, and the tip of the thermocouple wire is positioned in the mounting hole and fixed with an adhesive member. It is a thing.
【０００６】 また、後述する効果により、接着部材として、ガラスを用いてなるものが好ま しい。Further, it is preferable that the adhesive member is made of glass because of the effects described later.
【０００７】 更に、熱電対素線表面にシリカ等のセラミックコーティングを施してなるもの であってもよい。Further, the surface of the thermocouple wire may be coated with a ceramic such as silica.
【０００８】[0008]
以上の如く本考案の熱電対によるシリコンウェハー等の温度計測構造によれば 、熱電対の熱電対素線先端をシリコンウェハー等の表面に設けた有底の取付穴内 に位置させた状態で、減圧下のシリコンウェハーの複数箇所の温度を測定し、シ リコンウェハーの加熱温度分布の調査を行うことができる。 As described above, according to the temperature measurement structure for a silicon wafer or the like by the thermocouple of the present invention, decompression is performed with the tip of the thermocouple wire of the thermocouple positioned inside the bottomed mounting hole provided on the surface of the silicon wafer or the like. It is possible to investigate the heating temperature distribution of the silicon wafer by measuring the temperature at multiple points on the lower silicon wafer.
【０００９】 次に、接着部材として、ガラスを用いた場合には、シリコンウェハーの取付穴 内に熱電対における熱電対素線の先端部を挿入し、この取付穴の周囲に粉末ガラ スを盛り、シリコンウェハー全体を高温加熱炉中で加熱処理を行うと、盛り付け たガラスは取付穴内に気泡を残さずに充填され、熱電対素線の先端の温接点とシ リコンウェハーはガラスを介して一体化されるのである。Next, when glass is used as the adhesive member, the tip of the thermocouple wire of the thermocouple is inserted into the mounting hole of the silicon wafer, and the powder glass is spread around the mounting hole. When the entire silicon wafer is heated in a high-temperature heating furnace, the glass is filled without leaving bubbles in the mounting holes, and the hot junction at the tip of the thermocouple wire and the silicon wafer are integrated via the glass. Will be converted.
【００１０】 また、熱電対素線表面にシリカ等のセラミックコーティングを施してなるもの を用いた場合には、熱電対の熱電対素線表面に施されたシリカ等のセラミックコ ーティングされた表面コート層そのものが熱電対の熱起電力測定に必要な絶縁層 として作用し、且つシリカ等のセラミックコーティングとガラスの濡れ性が良い ので、シリコンウェハーと熱電対素線の接着性が非常に強固なものとなるのであ る。When a thermocouple wire whose surface is coated with a ceramic such as silica is used, the surface of the thermocouple wire coated with a ceramic such as silica is coated on the surface of the thermocouple wire. The layer itself acts as an insulating layer necessary for thermoelectric force measurement of the thermocouple, and the ceramic coating such as silica and the glass have good wettability, so the adhesion between the silicon wafer and the thermocouple wire is extremely strong. Will be.
【００１１】[0011]
本考案の詳細を更に図示した実施例により説明する。 図１に示したものは、半導体の各種処理装置、例えば減圧プラズマスパッタリ ング装置で処理するシリコンウェハーの加熱温度分布を予め調査するために使用 される熱電対によるシリコンウェハーの温度計測構造Ａ（以下、単に温度計測構 造Ａと称する。）である。 The details of the present invention will be described with reference to further illustrated embodiments. The structure shown in FIG. 1 is a temperature measurement structure A for a silicon wafer by a thermocouple used to investigate beforehand the heating temperature distribution of a silicon wafer processed by various semiconductor processing equipment, for example, a low pressure plasma sputtering equipment. Hereinafter, this is simply referred to as the temperature measurement structure A).
【００１２】 まず、熱電対１は、Ｋ熱電対等を用い、先端にできるだけ小さな溶接をして温 接点を形成した略Ｕ字形状とした直径が0.1mm の熱電対素線２の表面に、予め緻 密で非常に膜厚の薄いシリカ等のセラミックコーティング３を施したものである 。First, as the thermocouple 1, a K thermocouple or the like was used. A ceramic coating 3 such as silica, which is dense and has a very thin film thickness, is applied.
【００１３】 シリコンウェハー４には厚みが0.65mmのものを用い、図１に示すようにシリコ ンウェハー４表面に超音波加工機を用いて前記熱電対素線２の先端部が挿入可能 な大きさの例えば直径0.3mm 、深さ0.3mm の有底の取付穴５を複数個穿設するの である。A silicon wafer 4 having a thickness of 0.65 mm is used. As shown in FIG. 1, the tip of the thermocouple wire 2 can be inserted into the surface of the silicon wafer 4 by using an ultrasonic processing machine. For example, a plurality of bottomed mounting holes 5 having a diameter of 0.3 mm and a depth of 0.3 mm are formed.
【００１４】 そして、温度計測構造Ａは、図１のようにシリコンウェハー４の取付穴５内に 熱電対１における熱電対素線２の先端部を挿入し、この取付穴５の周囲に粉末ガ ラスを盛り、シリコンウェハー４全体を高温加熱炉中で加熱処理を行う。最適な 作業温度と時間で加熱を行うと盛り付けたガラス６は取付穴５内に気泡を残さず に充填され、熱電対素線２の先端の温接点とシリコンウェハー４はガラス６を介 して一体化されるのである。In the temperature measuring structure A, as shown in FIG. 1, the tip end of the thermocouple wire 2 in the thermocouple 1 is inserted into the mounting hole 5 of the silicon wafer 4, and the powder gas is surrounded by the mounting hole 5. Lath is piled up, and the entire silicon wafer 4 is heat-treated in a high temperature heating furnace. When heated at the optimum working temperature and time, the glass 6 is filled into the mounting hole 5 without leaving air bubbles, and the hot junction at the tip of the thermocouple wire 2 and the silicon wafer 4 pass through the glass 6. It will be integrated.
【００１５】 尚、上述した温度計測構造Ａでは、シリコンウェハー４を温度計測の対象とし ているが、特に限定されずガラス板、合成樹脂板等の板状のものや、その他さま ざまな物体表面の温度を計測するのに広く応用させることができる。 また、上述した温度計測構造Ａでは、シリコンウェハー４と熱電対１の熱電対 素線２を固定する接着部材としてガラスを用いているが、ガラスを主成分とする 接着部材又はその他にさまざまな高温に耐えることができる公知の接着剤を用い ることも可能である。In the temperature measurement structure A described above, the temperature of the silicon wafer 4 is measured, but the temperature is not particularly limited, and a plate-shaped object such as a glass plate or a synthetic resin plate, or other various object surfaces. It can be widely applied to measure the temperature of. Further, in the above-mentioned temperature measurement structure A, glass is used as an adhesive member for fixing the silicon wafer 4 and the thermocouple element 2 of the thermocouple 1, but an adhesive member containing glass as a main component or other various high temperatures. It is also possible to use a known adhesive capable of withstanding the above.
【００１６】 而して、本考案に係る代表的実施例の温度計測構造Ａによれば、減圧下で熱電 対１の熱電対素線２より、シリコンウェハー４の複数箇所の温度を測定し、シリ コンウェハー４の加熱温度分布の調査を行うことができる。Thus, according to the temperature measuring structure A of the typical embodiment according to the present invention, the temperature of the silicon wafer 4 at a plurality of points is measured from the thermocouple wire 2 of the thermocouple 1 under reduced pressure, The heating temperature distribution of the silicon wafer 4 can be investigated.
【００１７】 このように本考案に係る代表的実施例の温度計測構造Ａによれば、図１のよう にシリコンウェハー４の取付穴５内に熱電対１における熱電対素線２の先端部を 挿入し、この取付穴５の周囲に粉末ガラスを盛り、シリコンウェハー４全体を高 温加熱炉中で加熱処理を行うと盛り付けたガラス６は取付穴５内に気泡を残さず に充填され、熱電対素線２の先端の温接点とシリコンウェハー４はガラス６を介 して一体化されるのである。従って、シリコンウェハー４の取付穴５内に熱電対 １における熱電対素線２の先端部を位置させるとともに、この固定するガラス６ はシリコンウェハー４表面と熱電対素線２表面のシリカ膜に対して濡れ性が高い ので、強固に接着されるのである。また、シリコンウェハー４の取付穴５内に熱 電対１における熱電対素線２の先端部を位置させるとともに、内部に気泡を残さ ずに熱電対素線２の先端の温接点とシリコンウェハー４はガラス６を介して一体 化されるので、従来のようにセラミックセメントの粒子間の気体を介しての熱伝 達をなくすことができ、減圧下であってもシリコンウェハー４の正確な温度を測 定することができるのである。更に、熱電対１の熱電対素線２表面に予め施した 非常に膜厚の薄いシリカ等のセラミックコーティング３された表面コート層その ものが熱電対１の熱起電力測定に必要な絶縁層として作用するため、従来のよう にセラミック製の絶縁碍子又はガラススリーブ等の絶縁材からの熱伝導冷却がな いので、よりシリコンウェハー４表面の正確な温度測定を行うことができる。As described above, according to the temperature measuring structure A of the representative embodiment of the present invention, the tip end of the thermocouple wire 2 of the thermocouple 1 is inserted into the mounting hole 5 of the silicon wafer 4 as shown in FIG. Inserted, powder glass is placed around the mounting hole 5, and the whole silicon wafer 4 is heat-treated in a high-temperature heating furnace. The mounted glass 6 is filled in the mounting hole 5 without leaving bubbles, and the thermoelectric The hot junction at the tip of the pair of wires 2 and the silicon wafer 4 are integrated via the glass 6. Therefore, the tip of the thermocouple wire 2 of the thermocouple 1 is positioned in the mounting hole 5 of the silicon wafer 4, and the glass 6 to be fixed is fixed to the surface of the silicon wafer 4 and the silica film on the surface of the thermocouple wire 2. Since it has high wettability, it is firmly bonded. In addition, the tip of the thermocouple wire 2 of the thermocouple 1 is located in the mounting hole 5 of the silicon wafer 4, and the silicon wafer 4 and the hot junction at the tip of the thermocouple wire 2 are left without leaving bubbles inside. Since the glass is integrated via the glass 6, it is possible to eliminate the heat transfer through the gas between the particles of the ceramic cement as in the conventional case, and the accurate temperature of the silicon wafer 4 can be maintained even under reduced pressure. It can be measured. Furthermore, the surface coating layer, which was previously applied to the surface of the thermocouple element 2 of the thermocouple 1 and has a ceramic coating 3 of a very thin film such as silica, is used as an insulating layer necessary for thermoelectromotive force measurement of the thermocouple 1. Since it operates, there is no heat conduction cooling from an insulating material such as a ceramic insulator or a glass sleeve as in the conventional case, so that the temperature of the surface of the silicon wafer 4 can be measured more accurately.
【００１８】[0018]
本考案は、上述のとおり構成されているので、次に記載する効果を奏する。 請求項１の熱電対によるシリコンウェハー等の温度計測構造によれば、シリコ ンウェハーの取付穴内に熱電対における熱電対素線の先端部を位置させて、接着 部材により固定することにより、強固に固定することができるとともに、シリコ ンウェハー等の表面の正確な温度を測定することができるのである。 Since the present invention is configured as described above, it has the following effects. According to the temperature measurement structure for a silicon wafer or the like by the thermocouple according to claim 1, the tip of the thermocouple wire of the thermocouple is positioned in the mounting hole of the silicon wafer, and is fixed by the adhesive member to firmly fix the thermocouple wire. In addition to being able to do so, it is possible to measure the accurate temperature of the surface of a silicon wafer or the like.
【００１９】 請求項２の熱電対によるシリコンウェハー等の温度計測構造によれば、接着部 材として用いたガラスはシリコンウェハー表面と熱電対素線表面のシリカ膜に対 して濡れ性が高いので、強固に接着されるのであり、また、内部に気泡を残さず に熱電対素線の先端の温接点とシリコンウェハーはガラスを介して一体化される ので、従来のようにセラミックセメントの粒子間の気体を介しての熱伝達をなく すことができ、減圧下であってもシリコンウェハー等の表面の正確な温度を測定 することができるのである。According to the temperature measurement structure for a silicon wafer or the like by the thermocouple according to claim 2, since the glass used as the adhesive material has high wettability with respect to the silica film on the surface of the silicon wafer and the surface of the thermocouple wire. Since it is firmly adhered, and the hot junction at the tip of the thermocouple wire and the silicon wafer are integrated via glass without leaving any bubbles inside, the particles between the ceramic cement particles can be It is possible to eliminate the heat transfer through the gas, and it is possible to measure the accurate temperature of the surface of a silicon wafer or the like even under reduced pressure.
【００２０】 請求項３の熱電対によるシリコンウェハー等の温度計測構造によれば、熱電対 の熱電対素線表面に施されたシリカ等のセラミックコーティングされた表面コー ト層そのものが熱電対の熱起電力測定に必要な絶縁層として作用するため、従来 のようにセラミック製の絶縁碍子又はガラススリーブ等の絶縁材からの熱伝導冷 却がないので、正確な温度の測定を行うことができるのである。According to the temperature measurement structure for a silicon wafer or the like by the thermocouple according to claim 3, the surface coating layer itself, which is ceramic-coated with silica or the like and is applied to the surface of the thermocouple wire of the thermocouple, is the heat of the thermocouple. Since it acts as an insulating layer required for electromotive force measurement, there is no heat conduction cooling from insulating materials such as ceramic insulators or glass sleeves as in the past, so accurate temperature can be measured. is there.
【図面の簡単な説明】[Brief description of drawings]
【図１】代表的実施例の熱電対によるシリコンウェハー
等の温度計測構造の要部を示す縦断面側面図FIG. 1 is a vertical cross-sectional side view showing a main part of a temperature measurement structure for a silicon wafer or the like using a thermocouple according to a representative embodiment.
【図２】従来の熱電対によるシリコンウェハー等の温度
計測構造の要部を示す縦断面側面図FIG. 2 is a vertical cross-sectional side view showing a main part of a conventional temperature measurement structure for a silicon wafer or the like using a thermocouple.
Ａ 熱電対によるシリコンウェハーの温度計測構造 １ 熱電対 ２ 熱電対素線 ３ セラミックコーティング ４ シリコンウェハー ５ 取付穴 ６ ガラス A Temperature measurement structure of silicon wafer by thermocouple 1 Thermocouple 2 Thermocouple element wire 3 Ceramic coating 4 Silicon wafer 5 Mounting hole 6 Glass
Claims (3)
穴を設け、この取付穴内に熱電対素線の先端を位置させ
た状態で、接着部材で固定したことを特徴とする熱電対
によるシリコンウェハー等の温度計測構造。1. A silicon by thermocouple, characterized in that a bottomed mounting hole is provided on the surface of a silicon wafer or the like, and the tip of the thermocouple wire is positioned in the mounting hole and fixed with an adhesive member. Temperature measurement structure for wafers.
求項１記載の熱電対によるシリコンウェハー等の温度計
測構造。2. The temperature measuring structure for a silicon wafer or the like by a thermocouple according to claim 1, wherein glass is used as the adhesive member.
コーティングを施してなる請求項１又は請求項２記載の
熱電対によるシリコンウェハー等の温度計測構造。3. A temperature measuring structure such as a silicon wafer using a thermocouple according to claim 1, wherein the surface of the thermocouple wire is coated with a ceramic such as silica.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1784393U JPH0669785U (en) | 1993-03-16 | 1993-03-16 | Temperature measurement structure of silicon wafer etc. by thermocouple |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1784393U JPH0669785U (en) | 1993-03-16 | 1993-03-16 | Temperature measurement structure of silicon wafer etc. by thermocouple |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0669785U true JPH0669785U (en) | 1994-09-30 |
Family
ID=11954960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1784393U Pending JPH0669785U (en) | 1993-03-16 | 1993-03-16 | Temperature measurement structure of silicon wafer etc. by thermocouple |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0669785U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015059833A (en) * | 2013-09-19 | 2015-03-30 | 株式会社アンベエスエムティ | Thermocouple for surface temperature measurement and surface temperature measurement device |
| CN113811205A (en) * | 2019-03-11 | 2021-12-17 | 尼科创业贸易有限公司 | Aerosol supply device |
-
1993
- 1993-03-16 JP JP1784393U patent/JPH0669785U/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015059833A (en) * | 2013-09-19 | 2015-03-30 | 株式会社アンベエスエムティ | Thermocouple for surface temperature measurement and surface temperature measurement device |
| CN113811205A (en) * | 2019-03-11 | 2021-12-17 | 尼科创业贸易有限公司 | Aerosol supply device |
| JP2022524800A (en) * | 2019-03-11 | 2022-05-10 | ニコベンチャーズ トレーディング リミテッド | Aerosol supply device |
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