JPH0650782B2 - Tandem structure solar cell - Google Patents
Tandem structure solar cellInfo
- Publication number
- JPH0650782B2 JPH0650782B2 JP61141565A JP14156586A JPH0650782B2 JP H0650782 B2 JPH0650782 B2 JP H0650782B2 JP 61141565 A JP61141565 A JP 61141565A JP 14156586 A JP14156586 A JP 14156586A JP H0650782 B2 JPH0650782 B2 JP H0650782B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- solar cell
- tandem structure
- structure solar
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000007547 defect Effects 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910017817 a-Ge Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は太陽光エネルギーの光変換効率を高めたタンデ
ム構造太陽電池に関する。TECHNICAL FIELD The present invention relates to a tandem structure solar cell having an improved light conversion efficiency of solar energy.
太陽電池としては、半導体材料として結晶シリコン、ア
モルフアスシリコン（a-Si）、GaAsのような化合物半導
体を使用したもの等が各分野で実用化されており、中で
も安価で大面積のものが製造できるa-Si太陽電池が注目
され多くの研究がなされている。As solar cells, crystalline silicon, amorphous silicon (a-Si), and those that use compound semiconductors such as GaAs have been put to practical use in various fields, among others. The a-Si solar cells that can be produced have received much attention and many studies have been made.
かかる太陽電池の半導体層はpin単位セルが最小構造で
あり、更に光変換効率を高めるためにpin単位セルを２
個以上有するタンデム構造が知られている。例えば、２
個のpin単位セルを有するタンデム構造太陽電池は、第
３図に示すように、ガラス１上に設けた透明電極２と金
属電極３との間にｐ１ｉ１ｎ１単位セル４及びｐ２ｉ２
ｎ２単位セル５を挿入し、単位セル４、５間の接合がｎ
１ｐ１となるように構成してある。The semiconductor layer of such a solar cell has a minimum pin unit cell structure.
Tandem structures having more than one tandem structure are known. For example, 2
As shown in FIG. 3, the tandem structure solar cell having pin unit cells has p 1 i 1 n 1 unit cells 4 and p 2 between the transparent electrode 2 and the metal electrode 3 provided on the glass 1. i 2
n 2 unit cell 5 is inserted, and the junction between unit cells 4 and 5 is n
It is configured to be 1 p 1 .
ところが、タンデム構造太陽電池においては、上記の如
く２個のpin単位セル間にpn接合が存在するために、こ
のpn接合面で整流作用が生じ、各単位セルで発生した電
流の流れが妨げられるので、第４図に曲線(I)で示すよ
うに電圧の上昇に伴つて得られる電流が急激に低下して
しまい理想的な電流−電圧曲線(III)に比較して極めて
特性が悪く、最大出力点における出力が低いという欠点
があつた。However, in the tandem structure solar cell, since the pn junction exists between the two pin unit cells as described above, a rectifying action occurs at this pn junction surface, and the flow of current generated in each unit cell is blocked. Therefore, as shown by the curve (I) in Fig. 4, the current obtained with the increase of the voltage drops sharply and the characteristics are extremely poor compared to the ideal current-voltage curve (III). There was a drawback that the output at the output point was low.
この欠点を解決する一手段として、本発明者等は特願昭
60−241817号（昭和60年10月28日出願）でpn接合面を改
良したタンデム構造太陽電池を提案した。As a means for solving this drawback, the present inventors
We proposed a tandem structure solar cell with an improved pn junction surface in No. 60-241817 (filed on October 28, 1985).
第３図で説明すれば、このタンデム構造太陽電池は、pn
接合を形成するｎ１層及びｐ２層を高出力で形成したり
高濃度の不純物をドープすることによりｎ１層及びｐ２
層の内部欠陥準位並びにｎ１ｐ２接合面の界面欠陥準位
を高め、ｎ１ｐ２接合面の抵抗を低下させて電流の流れ
をスムーズにしたものである。ひの結果、電流−電圧曲
線は第４図の(II)の如く改善されたが、同時にｉ１ｎ１
接合面及びｐ２ｉ２接合面にも界面欠陥準位が形成され
るので、ｉ１層及びｉ２層で生成したキヤリヤがトラツ
プされて電極に有効に収集されず、第４図の(III)に示
す理想的な電流−電圧曲線に比べてまだ効率が低いとい
う問題があつた。Referring to FIG. 3, this tandem structure solar cell is
By forming the n 1 layer and the p 2 layer forming the junction with high output or by doping with a high concentration of impurities, the n 1 layer and the p 2 layer
Increase the interface defect level of an internal defect level and n 1 p 2 bonding surface of the layer is obtained by the current flow smoothly by reducing the resistance of the n 1 p 2 joint surfaces. As a result, the current-voltage curve was improved as shown in (II) of FIG. 4, but at the same time i 1 n 1
Since interfacial defect levels are also formed on the joint surface and the p 2 i 2 joint surface, the carriers generated in the i 1 layer and the i 2 layer are trapped and are not effectively collected in the electrode, and thus (III in FIG. There is a problem that the efficiency is still lower than the ideal current-voltage curve shown in FIG.
本発明は上記特願昭60−241817号発明を更に改良し、ｎ
１層及びｐ２層のキヤリヤ収集電極としての機能を損な
うことなくｎ１ｐ２接合面の抵抗を小さくしてキヤリヤ
の再結合をスムースにすることにより、光変換効率の高
いタンデム構造太陽電池を提供することを目的とする。The present invention is a further improvement of the invention of Japanese Patent Application No. 60-241817 mentioned above.
A tandem structure solar cell with high light conversion efficiency can be obtained by smoothing the recombination of carriers by reducing the resistance of the n 1 p 2 junction surface without impairing the function of the 1- layer and p 2 -layers as the carrier collecting electrode. The purpose is to provide.
この目的を達成するために、本発明のタンデム構造太陽
電池においては、第１図に示すように各pin単位セル４
と５の間にｉ型のアモルフアス層６を挿入して単位セル
４、５間の接合をｎ１−ｉ型アモルフアス−ｐ２とす
る。In order to achieve this object, in the tandem structure solar cell of the present invention, as shown in FIG.
The i-type amorphous layer 6 is inserted between the first and the second cells 5 to make the junction between the unit cells 4 and 5 n1-i-type amorphous-p2.
各pin単位セル間に挿入するｉ型アモルフアス層は、特
にａ−Ｇｅ：Ｈが好ましく、ｎ１−アモルフアス−ｐ２
接合での電流−電圧特性が第２図に示すように直線的で
且つ傾きが急な方が好ましい。The i-type amorphous layer inserted between each pin unit cell is preferably a-Ge: H, and n 1 -amorphous-p 2
It is preferable that the current-voltage characteristics at the junction be linear and have a steep slope as shown in FIG.
本発明において各pin単位セル間に挿入されるｉ型ａ−
Ｇｅ：Ｈ膜は内部欠陥準位が高く、しかも挿入された層
と接合するｎ１層及びｐ２層との接合面での界面欠陥準
位が高くなるので、ｎ１ｐ２接合間の抵抗が小さくなつ
てキヤリヤの再結合がスムースになる。In the present invention, an i-type a-inserted between each pin unit cell
The Ge: H film has a high internal defect level, and also has a high interface defect level at the interface between the inserted layer and the n 1 layer and the p 2 layer, so that the resistance between the n 1 p 2 junctions is high. As the size becomes smaller, the rejoining of the carrier becomes smoother.
しかも、ｉ型ａ−Ｇｅ：Ｈ膜は不純物を含まないｉ型の
水素化されたアモルフアスゲルマニウムであるから、内
部欠陥準位が適度であって高すぎないので両側のｎ１層
及びｐ２層に悪影響を与えず、ｉ１ｎ１接合面及びｐ２
ｉ２接合面にキヤリアをトラツプする余分な界面欠陥準
位が形成されることがない。Moreover, i-type a-Ge: H film because it is Amorufu Ass Germanium hydrogenation of i-type containing no impurities, internal defect level since too high a modest sides n 1 layer of and p 2 I 1 n 1 interface and p 2 without adversely affecting the layers
No extra interface defect level for trapping a carrier is formed on the i 2 bonding surface.
かゝる作用はタンデム構造セルに共通であるから、タン
デム構造太陽電池以外のタンデム構造を有するイメージ
センサーや感光体にも応用することが可能である。Since such an operation is common to the tandem structure cell, it can be applied to an image sensor or a photoconductor having a tandem structure other than the tandem structure solar cell.
第１図に示す２つのpin単位セル４、５を有するa-Siの
タンデム構造太陽電池を通常の方法で製造したが、ｎ１
層とｐ２層は高周波出力0.05w/cm2及び基板温度250℃で
形成し、他方アモルフアス層は同じ高周波出力であるが
基板温度150℃でｉ型a-Ge:H膜を20Å形成した。The tandem structure solar cell of the a-Si having a two pin unit cells 4 and 5 shown in FIG. 1 were produced in the usual way, n 1
The p-layer and the p 2 layer were formed with a high-frequency output of 0.05 w / cm 2 and a substrate temperature of 250 ° C., while the amorphous layer has the same high-frequency output but a substrate temperature of 150 ° C. and an i-type a-Ge: H film of 20 liters was formed.
比較のために、第３図に示す特願昭60−241817号による
従来のタンデム構造太陽電池を製造したが、内部欠陥準
位を高めるためｎ１層とｐ２層は高周波出力0.5w/cm2及
び基板温度250℃で形成した。尚、単位セル４及び５の
各層の膜厚は上記本発明の実施例と同一に形成した。For comparison, a conventional tandem structure solar cell according to Japanese Patent Application No. 60-241817 shown in FIG. 3 was manufactured. The n 1 layer and the p 2 layer had a high-frequency output of 0.5 w / cm 2 to increase the internal defect level. 2 and a substrate temperature of 250 ° C. The film thickness of each layer of the unit cells 4 and 5 was formed to be the same as that of the above-mentioned embodiment of the present invention.
これら二つのタンデム構造太陽電池の太陽光線照射下で
の電流−電圧特性は下記第１表の通りであつた。The current-voltage characteristics of these two tandem structure solar cells under the irradiation of sunlight are shown in Table 1 below.
本発明の実施例では、ｎ１層とｐ２層との間で電流がス
ムースに流れると共にｉ１ｎ１接合面及びｉ２ｐ２接合
面での電力損失がないので、短絡電流（Jsc）は6.9mA/c
m2を示し、曲線因子（FF）は49％であつた。 In the example of the present invention, since the current smoothly flows between the n 1 layer and the p 2 layer and there is no power loss at the i 1 n 1 junction surface and the i 2 p 2 junction surface, the short circuit current (Jsc) Is 6.9 mA / c
m 2 and the fill factor (FF) was 49%.
これに対し従来例においては、ｎ１ｐ２接合面では電流
がスムースに流れるが、ｉ１ｎ１接合面及びｉ２ｐ２接
合面で電力損失が生じるので、短絡電流は6.5mA/cm2、
曲線因子は43％にすぎなかつた。In the conventional example contrast, n 1 p 2 current flows smoothly in the bonding surface, so the power losses in the i 1 n 1 joint surfaces and i 2 p 2 bonding surface, the short-circuit current is 6.5 mA / cm 2 ,
The fill factor was only 43%.
本発明によれば、pin単位セル間で対向しているｎ層及
びｐ層のキヤリヤ収集電極としての機能を損なわずに該
ｎ層とｐ層との間の抵抗を小さくしてキヤリヤの再結合
をスムースにすることができるので、第４図の理想的な
電流−電圧曲線(III)に近い特性を有し光変換効率の高
いタンデム構造太陽電池を提供することができる。According to the present invention, the recombination of carriers is reduced by reducing the resistance between the n layer and the p layer without impairing the function of the n layer and the p layer facing each other between the pin unit cells as the carrier collecting electrodes. Therefore, it is possible to provide a tandem structure solar cell having characteristics close to the ideal current-voltage curve (III) of FIG. 4 and high light conversion efficiency.
第１図は本発明のタンデム構造太陽電池の一例を示す断
面図であり、第２図は本発明のタンデム構造太陽電池の
ｎ−アモルフアス−ｐ接合面での電流−電圧特性であ
り、第３図は従来のタンデム構造太陽電池の断面図であ
り、第４図はタンデム構造太陽電池の出力特性を示すグ
ラフである。 １…ガラス基板、２…透明電極、３…金属電極、４、５
…単位セル、６…アモルフアス層、７…ｎ′１層、８…
ｐ′２層FIG. 1 is a cross-sectional view showing an example of the tandem structure solar cell of the present invention, and FIG. 2 is a current-voltage characteristic at the n-amorphous-p junction surface of the tandem structure solar cell of the present invention. The figure is a cross-sectional view of a conventional tandem structure solar cell, and FIG. 4 is a graph showing the output characteristics of the tandem structure solar cell. 1 ... Glass substrate, 2 ... Transparent electrode, 3 ... Metal electrode, 4, 5
... unit cell, 6 ... Amorufuasu layer, 7 ... n '1 layer, 8 ...
p '2-layer
Claims (1)
ム構造太陽電池において、各単位セル間にｉ型ａ−Ｇ
ｅ：Ｈ膜を挿入し、単位セル間の接合をｎ−ｉ型アモル
ファス−ｐ接合としたことを特徴とするタンデム構造太
陽電池。1. In a tandem structure solar cell having two or more pin unit cells, an i-type a-G is provided between each unit cell.
An e: H film is inserted, and a tandem structure solar cell is characterized in that a junction between unit cells is an ni-type amorphous-p junction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61141565A JPH0650782B2 (en) | 1986-06-17 | 1986-06-17 | Tandem structure solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61141565A JPH0650782B2 (en) | 1986-06-17 | 1986-06-17 | Tandem structure solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62296569A JPS62296569A (en) | 1987-12-23 |
| JPH0650782B2 true JPH0650782B2 (en) | 1994-06-29 |
Family
ID=15294930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61141565A Expired - Lifetime JPH0650782B2 (en) | 1986-06-17 | 1986-06-17 | Tandem structure solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0650782B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6459966A (en) * | 1987-08-31 | 1989-03-07 | Sharp Kk | Laminated multilayer amorphous solar cell |
| US5246506A (en) * | 1991-07-16 | 1993-09-21 | Solarex Corporation | Multijunction photovoltaic device and fabrication method |
| JP4674780B2 (en) * | 2001-02-08 | 2011-04-20 | 株式会社カネカ | Method for manufacturing tandem thin film solar cell |
| JP4618694B2 (en) * | 2000-10-04 | 2011-01-26 | 株式会社カネカ | Method for manufacturing tandem thin film solar cell |
| WO2010087312A1 (en) * | 2009-01-28 | 2010-08-05 | 三菱電機株式会社 | Thin film photoelectric conversion device and method for manufacturing same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0153043A3 (en) * | 1984-02-15 | 1986-09-24 | Energy Conversion Devices, Inc. | Ohmic contact layer |
-
1986
- 1986-06-17 JP JP61141565A patent/JPH0650782B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62296569A (en) | 1987-12-23 |
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