JPH0642333Y2 - Processing tank for semiconductor materials - Google Patents
Processing tank for semiconductor materialsInfo
- Publication number
- JPH0642333Y2 JPH0642333Y2 JP1985107856U JP10785685U JPH0642333Y2 JP H0642333 Y2 JPH0642333 Y2 JP H0642333Y2 JP 1985107856 U JP1985107856 U JP 1985107856U JP 10785685 U JP10785685 U JP 10785685U JP H0642333 Y2 JPH0642333 Y2 JP H0642333Y2
- Authority
- JP
- Japan
- Prior art keywords
- tank
- holes
- passage
- processing
- row
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C3/00—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material
- B05C3/02—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material
- B05C3/09—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material for treating separate articles
- B05C3/109—Passing liquids or other fluent materials into or through chambers containing stationary articles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【考案の詳細な説明】 （産業上の利用分野） 本考案はシリコンウェハーやガラスフォトマスクなどの
半導体材料の処理装置に関し、とくにキャリヤ内に収め
られた半導体材料にエッチングまたは現像もしくはメッ
キ．さらには洗浄等の処理を施こすための４角形の処理
槽に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) The present invention relates to an apparatus for processing semiconductor materials such as silicon wafers and glass photomasks, and particularly to etching or developing or plating semiconductor materials contained in a carrier. Further, the present invention relates to a quadrangular processing tank for performing processing such as cleaning.
（従来の技術） 従来、この種の処理槽は概して直方体状のキャリヤを受
入れるため４角形に構成され、且つその底部に処理液導
入用の通路が設けられ、および槽の周囲にはオーバーフ
ローした処理液を受ける樋が備えられている。そして、
底部の通路から槽内に導入された処理液は槽の頂部をオ
ーバーフローし、樋に流れおちて、ポンプを含む循環路
を通り、再び導入通路に送られ、循環する。槽内におけ
るキャリヤに収められた半導体材料はそのように循環す
る処理液との接触によって処理される。(Prior Art) Conventionally, a processing tank of this type is generally formed in a quadrangular shape for receiving a rectangular parallelepiped carrier, a passage for introducing a processing liquid is provided at the bottom of the processing tank, and an overflow processing is formed around the tank. There is a gutter to receive the liquid. And
The processing liquid introduced into the tank from the passage at the bottom overflows the top of the tank, flows into the gutter, passes through the circulation passage including the pump, is sent again to the introduction passage, and is circulated. The semiconductor material contained in the carrier in the bath is processed by contact with the processing liquid thus circulated.
（考案が解決しようとする問題点） 上記のように従来技術では底部から導入した処理液を上
昇して、槽の周囲からオーバーフローするため、槽内の
中央部および上方では処理液は活発に流れるが、周囲お
よび下部では流れが弱く且つ局部的には淀むところもあ
り、従って、半導体材料と処理液との接触が不均一にな
る。そのため半導体材料の処理が不均一になるという問
題点があった。(Problems to be Solved by the Invention) As described above, in the conventional technique, the processing liquid introduced from the bottom rises and overflows from the periphery of the tank, so that the processing liquid actively flows in the central portion and the upper portion of the tank. However, the flow is weak in the surroundings and the lower part, and there is also a part that locally stagnates, so that the contact between the semiconductor material and the processing liquid becomes uneven. Therefore, there is a problem that the treatment of the semiconductor material becomes non-uniform.
本考案の目的は上記従来技術の問題点を解決することで
あって、それ故、槽内の全体にわたって処理液の流れを
生じさせて、半導体材料の処理を均一になし得るように
した半導体材料の処理槽を提供することである。An object of the present invention is to solve the above-mentioned problems of the prior art. Therefore, a semiconductor material can be uniformly processed by causing a flow of a processing liquid throughout the bath. Is to provide a treatment tank of.
（問題点を解決するための手段） 本考案による処理槽は、直方体状のキャリヤを受入れる
ため４角形状の槽からなり、その底部に処理液導入用の
通路が在るほか、前記槽の底部には２列の孔が形成さ
れ、前記導入用の通路は槽の底部の中央に設けられ且つ
前記孔の列は該通路の両側に対称に設けられ、各列の孔
は内側に向って上方に傾斜し且つ等間隔に設けられ、さ
らに各列の孔は直径0.5〜2.0mmの円形孔であって、一方
の列の孔は他方の列の孔に対しくい違い関係で設けられ
ている。(Means for Solving the Problems) The processing tank according to the present invention comprises a rectangular tank for receiving a rectangular parallelepiped carrier, and has a passage for introducing a processing liquid at the bottom thereof, and the bottom of the tank. Two rows of holes are formed in each of the holes, the introduction passage is provided at the center of the bottom of the tank, and the rows of holes are provided symmetrically on both sides of the passage. The holes in each row are circular holes having a diameter of 0.5 to 2.0 mm, and the holes in one row are provided in a staggered relationship with the holes in the other row.
（前記手段の作用） 槽の底部に設けられた各列の各孔から放射された処理液
は槽内の内側を上昇し、液面上で折返して槽の内壁に沿
って下降し、底部に沿って内側に流れて再び上昇する循
環流を生じる。これらの孔の列が２つ在るためこのよう
な循環流は両側にでき、槽内全体に流れを生じ、従って
攪拌し、半導体材料の全面に対する処理液の接触を均一
にする。(Operation of the means) The processing liquid radiated from each hole of each row provided at the bottom of the tank rises inside the tank, turns back on the liquid surface, and descends along the inner wall of the tank to reach the bottom. This creates a circulating flow that flows inward along and rises again. Due to the two rows of these holes, such a circulating flow can be on both sides, creating a flow throughout the vessel and thus agitating and evenly contacting the processing liquid with the entire surface of the semiconductor material.
（実施例） 次に図面を参照のもとに本考案の実施例に関し説明す
る。この処理槽はほぼ直方体のキャリヤ（Ａ）を受入れ
るため図示のように４角形の槽（１）から成り、槽
（１）の外周に樋（２）が備えられる。図示の実施例で
は槽（１）の上部が２重に構成され、その間が樋（２）
になっている。樋（２）の適当な位置には排出路（３）
があり、樋（２）は排出路（３）の位置に向って下降す
るのが好ましい。槽（１）の底面の適当な位置に処理液
導入用の通路（４）があり、好ましくは底面は中央部に
向って下降し且つその中央部に該通路（４）が設置され
る。このような槽（１）は樹脂等で作られ、好ましくは
テフロンで作られる。(Embodiment) Next, an embodiment of the present invention will be described with reference to the drawings. This processing tank is composed of a rectangular tank (1) for receiving a substantially rectangular parallelepiped carrier (A), and a trough (2) is provided on the outer periphery of the tank (1). In the illustrated embodiment, the upper part of the tank (1) is composed of two layers, and the space between them is the gutter (2).
It has become. At the proper position of the gutter (2), the discharge path (3)
Preferably, the gutter (2) descends towards the position of the discharge channel (3). There is a passage (4) for introducing the treatment liquid at an appropriate position on the bottom surface of the tank (1), and preferably the bottom surface descends toward the center and the passage (4) is installed at the center. Such a tank (1) is made of resin or the like, preferably Teflon.
さらに槽（１）の内部を通して処理液を循環するため、
第１図に示すようにポンプ（５）、温度コントローラ
（６）およびフィルター（７）が装着される。なお、こ
の処理液には洗浄用の水も含まれる。（８）はキャリヤ
支持用の部材である。Furthermore, since the processing liquid is circulated through the inside of the tank (1),
A pump (5), a temperature controller (6) and a filter (7) are mounted as shown in FIG. The treatment liquid also contains water for cleaning. (8) is a member for supporting the carrier.
この処理槽の特徴は第３図に明瞭に示すように槽の底部
に２列の孔（10）を設けたことである。これらの孔（1
0）はそれぞれ単純な孔であって、円形孔であればその
直径が約0.5〜2mmである。また、各孔（10）は第１図に
示すように内側に向って上方に傾斜し、従ってそれらの
孔（10）を通して処理液を斜め上方内側に放射するよう
になっている。孔の列は通路（４）を挾んで両側に設け
られ、且つ好ましくは中央部に関し対称に設けられる。
また孔の２つの列は直線であって、且つ互に平行である
のが好ましく、且つ第３図に見られるように孔（10）は
等間隔に設けられ、さらに好ましくは一方の列の孔は他
の列の孔に対しくい違い関係で設けられる。The feature of this treatment tank is that two rows of holes (10) are provided at the bottom of the tank as clearly shown in FIG. These holes (1
Each of 0) is a simple hole, and if it is a circular hole, its diameter is about 0.5 to 2 mm. Further, each hole (10) is inclined upward toward the inside as shown in FIG. 1, so that the processing liquid is radiated obliquely upward inside through the hole (10). Rows of holes are provided on either side of the passage (4) and are preferably symmetrical about the center.
Also, the two rows of holes are preferably straight and parallel to each other, and as seen in FIG. 3, the holes (10) are evenly spaced, more preferably the holes in one row. Are provided in a staggered relationship to the holes in the other rows.
各列の孔（10）に沿って槽（１）の底部に通路（12）が
設けられ、第１図に示すように各通路（12）はその列の
各孔（10）に連通している。また各通路（12）は孔（1
0）の列に沿って設けられることは言うまでもなく、従
って好ましくは処理液導入用の通路（４）の両側に設け
られる。そして、各通路（12）は第１図に示すように槽
（１）の底壁内に形成してもよく、且つフィルタ（７）
および温度コントローラ（６）を介してポンプ（５）の
吐出口に連通される。第４図に示すように、この実施例
では各通路（12）の一端（12a）は開いており、そこに
管またはパイプが接続され、且つ他端（12b）は閉じて
いるが、槽（１）が大形になれば、該他端も開いて管を
接続し、両側から処理液を導入してもよい。なお、場合
によっては通路（12）は第５図に示すように槽（１）の
底部の下面に一体に、または接着などにより備えられた
ほぼ半割状の筒体（13）によって形成してもよい。A passage (12) is provided at the bottom of the tank (1) along the hole (10) of each row, and each passage (12) communicates with each hole (10) of that row as shown in FIG. There is. Each passage (12) has a hole (1
It goes without saying that they are provided along the line (0), and therefore they are preferably provided on both sides of the passage (4) for introducing the processing liquid. And each passage (12) may be formed in the bottom wall of the tank (1) as shown in FIG. 1, and the filter (7)
And to the discharge port of the pump (5) via the temperature controller (6). As shown in FIG. 4, in this embodiment, one end (12a) of each passage (12) is open, a pipe or pipe is connected thereto, and the other end (12b) is closed, but a tank ( When the size of 1) becomes large, the other end may be opened to connect a pipe and the treatment liquid may be introduced from both sides. Depending on the case, the passage (12) is formed integrally with the bottom surface of the bottom of the tank (1) as shown in FIG. 5, or is formed by a substantially half-divided cylindrical body (13) provided by adhesion or the like. Good.
従って、この処理槽では半導体材料を収めたキャリヤ
（15）を槽内に装着すると、ポンプ（５）により通路
（４）および各孔（10）から処理液を下方より槽内に導
入し、槽内を上昇してオーバーフローし、樋（２）およ
び排出路（３）を通ってポンプ（５）に流れて循環す
る。その場合、各孔（10）から放射された処理液は第１
図に示すように、槽内の内側をキャリヤの底部を通って
上昇し且つ液面上で折返して槽の内壁に沿って下降する
循環流を生じ、このような循環流が両側にでき、槽内の
全体に流れを生じる。好適な循環流を生じるためには、
ポンプ（５）の吐出圧力1kg/cm2、流量10l/分であれば
孔（10）の直径は1.0〜1.6mm、ポンプ（５）が0.4kg/cm
2、5l/分であれば孔（10）の直径は0.5〜1.0mmにするの
が好ましい。Therefore, in this treatment tank, when the carrier (15) containing the semiconductor material is mounted in the tank, the treatment liquid is introduced into the tank from below through the passage (4) and each hole (10) by the pump (5). It rises up and overflows, and flows through the gutter (2) and the discharge passage (3) to the pump (5) for circulation. In that case, the treatment liquid emitted from each hole (10) is the first
As shown in the figure, a circulation flow that rises inside the tank through the bottom of the carrier and folds back on the liquid surface to descend along the inner wall of the tank, such a circulation flow is formed on both sides, A flow is generated throughout. In order to create a suitable circulating flow,
If the discharge pressure of the pump (5) is 1 kg / cm 2 and the flow rate is 10 l / min, the diameter of the hole (10) is 1.0 to 1.6 mm, and the pump (5) is 0.4 kg / cm.
If it is 2 , 5 l / min, the diameter of the hole (10) is preferably 0.5 to 1.0 mm.
（考案の効果） 上記のように、本考案によれば、槽内全体に循環流を生
じさせるので、適切に攪拌され且つコーナで溜ることも
ないので、処理液と半導体材料の接触が均一になされ、
従って半導体材料を均一に処理することができる。(Effect of the Invention) As described above, according to the present invention, since the circulating flow is generated in the entire tank, it is appropriately stirred and does not collect at the corner, so that the contact between the processing liquid and the semiconductor material is uniform. Made,
Therefore, the semiconductor material can be uniformly processed.
第１図は本考案の一実施例を示すものであって、第３図
の線Ａ−Ａに沿って取った断面図、第２図は本考案の一
例による処理槽の斜視図、第３図はその平面図、第４図
は第３図の線Ｂ−Ｂに沿って取った断面図、そして第５
図は他の実施例を示す第１図に類似の断面図である。 図中、１…処理槽、４…処理液導入用の通路、10…孔、
15…キャリヤFIG. 1 shows an embodiment of the present invention, and is a sectional view taken along the line AA in FIG. 3, and FIG. 2 is a perspective view of a processing tank according to an example of the present invention. FIG. 4 is a plan view thereof, FIG. 4 is a sectional view taken along line BB in FIG. 3, and FIG.
The drawing is a sectional view similar to FIG. 1 showing another embodiment. In the figure, 1 ... Treatment tank, 4 ... Passage for introducing treatment liquid, 10 ... Hole,
15 ... Carrier
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/027 21/306 Ｊ 9272−4Ｍ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H01L 21/027 21/306 J 9272-4M
Claims (1)
チング、現像、メッキ、洗浄等の処理を施こすための４
角形の槽であって、前記槽内に前記キャリヤを受入れた
状態で前記槽の底部より処理液を導入し且つオーバーフ
ローさせるようになっている処理槽において、前記槽の
底部には処理液導入用の通路のほか処理液を放射する２
列の孔が形成され、前記導入用の通路は前記槽の底部の
中央に設けられ且つ前記孔の列は前記通路の両側に対称
に設けられ、各列の前記孔は該孔から放射された処理液
が前記キャリヤの底部を通って上昇するように内側に向
って上方に傾斜し且つ各前記孔は直径0.5〜2.0mmの円形
孔であり、さらに各列の前記孔は等間隔に設けられて一
方の列の前記孔は他方の列の前記孔に対しくい違い関係
で設けられていることを特徴とする半導体材料の処理
槽。1. A semiconductor material contained in a carrier, which is used for subjecting semiconductor material to treatments such as etching, development, plating and cleaning.
A processing tank for introducing a processing liquid into the bottom of the tank, the processing tank being a prismatic tank configured to introduce and overflow the processing liquid from the bottom of the tank while the carrier is received in the tank. In addition to the passage of 2
Rows of holes are formed, the introduction passage is provided in the center of the bottom of the tank and the rows of holes are provided symmetrically on either side of the passage, the holes in each row being emitted from the holes. The treatment liquid is inclined upwards inward so that it rises through the bottom of the carrier and each said hole is a circular hole with a diameter of 0.5-2.0 mm, and the holes in each row are equally spaced. The processing tank for semiconductor material is characterized in that the holes in one row are provided in a staggered relationship with the holes in the other row.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985107856U JPH0642333Y2 (en) | 1985-07-15 | 1985-07-15 | Processing tank for semiconductor materials |
| DE19863623233 DE3623233A1 (en) | 1985-07-15 | 1986-07-10 | Basin for treating semiconductor materials |
| KR1019860005591A KR870001648A (en) | 1985-07-15 | 1986-07-11 | Processing tank of semiconductor material |
| KR2019900012096U KR910001932Y1 (en) | 1985-07-15 | 1990-08-10 | The processing vessel of semiconductor material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985107856U JPH0642333Y2 (en) | 1985-07-15 | 1985-07-15 | Processing tank for semiconductor materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6217122U JPS6217122U (en) | 1987-02-02 |
| JPH0642333Y2 true JPH0642333Y2 (en) | 1994-11-02 |
Family
ID=14469797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985107856U Expired - Lifetime JPH0642333Y2 (en) | 1985-07-15 | 1985-07-15 | Processing tank for semiconductor materials |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH0642333Y2 (en) |
| KR (2) | KR870001648A (en) |
| DE (1) | DE3623233A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050196519A1 (en) * | 2004-03-08 | 2005-09-08 | Depuy Products, Inc. | Apparatus for producing a biomimetic coating on a medical implant |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1067657B (en) * | 1955-08-03 | 1959-10-22 | Schilde Maschb Ag | Immersion tank for surface treatment |
| DE1577685B2 (en) * | 1965-08-13 | 1974-07-04 | Duerr, Otto, 7000 Stuttgart | Immersion basins for the surface treatment of workpieces, in particular for painting |
| JPS5452985A (en) * | 1977-10-04 | 1979-04-25 | Kyushu Nippon Electric | Etching device |
-
1985
- 1985-07-15 JP JP1985107856U patent/JPH0642333Y2/en not_active Expired - Lifetime
-
1986
- 1986-07-10 DE DE19863623233 patent/DE3623233A1/en not_active Ceased
- 1986-07-11 KR KR1019860005591A patent/KR870001648A/en not_active Application Discontinuation
-
1990
- 1990-08-10 KR KR2019900012096U patent/KR910001932Y1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6217122U (en) | 1987-02-02 |
| DE3623233A1 (en) | 1987-01-15 |
| KR910001932Y1 (en) | 1991-03-30 |
| KR870001648A (en) | 1987-03-17 |
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