JPH0637008A - Patterning method - Google Patents
Patterning methodInfo
- Publication number
- JPH0637008A JPH0637008A JP19079192A JP19079192A JPH0637008A JP H0637008 A JPH0637008 A JP H0637008A JP 19079192 A JP19079192 A JP 19079192A JP 19079192 A JP19079192 A JP 19079192A JP H0637008 A JPH0637008 A JP H0637008A
- Authority
- JP
- Japan
- Prior art keywords
- photosensitive material
- pattern
- positive
- thin film
- negative
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、数μm〜数十μm程度の
パターン幅を用いる薄膜デバイス、例えば、薄膜ヘッド
等の製造に用いるパターニング方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a patterning method used for manufacturing a thin film device using a pattern width of about several .mu.m to several tens .mu.m, such as a thin film head.
【０００２】[0002]
【従来の技術】図４は従来のリフトオフの工程を説明す
る要部の断面図である。基板41上(a)にレジスト42(b)で
ネガパターン43(c)を形成する。その後、最終的にパタ
ーン形成を必要とするところのメタル薄膜44(d)を全面
に形成する。次にレジスト剥離液によってレジスト42を
除去すると、メタル薄膜44のうちレジスト42上に形成さ
れた部分も除去され、所望のメタルパターン45(e)が得
られる。2. Description of the Related Art FIG. 4 is a cross-sectional view of an essential part for explaining a conventional lift-off process. A negative pattern 43 (c) is formed on the substrate 41 (a) with the resist 42 (b). After that, a metal thin film 44 (d) where pattern formation is finally required is formed on the entire surface. Next, when the resist 42 is removed with a resist remover, the portion of the metal thin film 44 formed on the resist 42 is also removed, and the desired metal pattern 45 (e) is obtained.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら前述のよ
うな方法では下記のような問題点を有する。図５はレジ
ストが剥離する前後の断面図であり、レジスト剥離前の
断面図(a)に示すようにメタル薄膜51の膜厚が大きくな
ってくると、レジスト剥離後の断面図(b)に示すように
レジスト52と共に除去されるメタル薄膜51の端部に、ば
り53やかけ54を発生し、良好なパターニングが行なえな
い。またこの対策としてレジスト52の膜厚を大きくする
ことが考えられるが、それは、パターン寸法が大きくて
精度を必要としない場合にしか使えない。However, the above-mentioned method has the following problems. FIG. 5 is a sectional view before and after the resist is stripped. As shown in the sectional view (a) before the resist is stripped, when the metal thin film 51 becomes thicker, the sectional view (b) after the resist is stripped is shown. As shown, burrs 53 and burrs 54 are generated at the ends of the metal thin film 51 that is removed together with the resist 52, and good patterning cannot be performed. As a countermeasure against this, it is conceivable to increase the film thickness of the resist 52, but this can be used only when the pattern dimension is large and accuracy is not required.
【０００４】本発明は上述したようなメタル薄膜の端部
に、ばりやかけのないパターン寸法の精度が良いパター
ニング方法の提供を目的とする。It is an object of the present invention to provide a patterning method in which the edge portion of the metal thin film as described above is free from burrs and has a high pattern size accuracy.
【０００５】[0005]
【課題を解決するための手段】本発明の第１の発明にお
いては、第１の感光材料でポジパターンを形成した後、
その上に第２の感光材料でネガパターンを形成し、その
後、前記第１の感光材料で形成したポジパターンを除去
することでリフト形成することを特徴とするものであ
る。In the first aspect of the present invention, after forming a positive pattern with the first photosensitive material,
A negative pattern is formed thereon with the second photosensitive material, and then the positive pattern formed with the first photosensitive material is removed to perform lift formation.
【０００６】本発明の第２の発明は、第１の発明におけ
るポジパターンの形成において、感度の異なる感光材料
のうち感度の悪い方の感光材料を下層に、感度の良い方
の感光材料を上層に形成した後、１回の露光でポジパタ
ーンを形成することを特徴とするものである。In the second invention of the present invention, in the formation of the positive pattern in the first invention, a photosensitive material having a lower sensitivity among photosensitive materials having different sensitivities is a lower layer and a photosensitive material having a higher sensitivity is an upper layer. After that, a positive pattern is formed by one exposure.
【０００７】本発明の第３の発明は、第１の発明におけ
るポジパターンを形成する第１の材料とネガパターンを
形成する第２の材料が互いにポジ型，ネガ型と相異なる
感光材料であることを特徴としたものである。A third invention of the present invention is a photosensitive material in which the first material for forming the positive pattern and the second material for forming the negative pattern in the first invention are different from each other in the positive type and the negative type. It is characterized by that.
【０００８】[0008]
【作用】本発明の第１の発明では、第１の感光材料で形
成したポジパターンのテーパ部分を利用して第２の感光
材料で形成するネガパターンを逆テーパに形成すること
が可能となる。それによってその上に形成する薄膜に段
切れが発生し易くなり、薄膜の膜厚が大きくても、ばり
やかけを起さず、良好なパターンニングが行なえる。In the first aspect of the present invention, the negative pattern formed of the second photosensitive material can be formed into an inverse taper by utilizing the taper portion of the positive pattern formed of the first photosensitive material. . As a result, the thin film formed on the thin film is likely to have step breakage, and even if the thin film has a large film thickness, good patterning can be performed without causing burrs or chips.
【０００９】本発明の第２の発明では、感度の悪い感光
材料が大きなテーパ部分、感度の良い感光材料が小さな
テーパ部分を形成するので、ネガパターンはオーバーハ
ング型の２段のテーパ部分を有する。それによって薄膜
の段切れがさらに起こり易くなり、第１の発明よりも良
好なパターニングが行なえる。In the second aspect of the present invention, since the photosensitive material having a poor sensitivity forms a large taper portion and the photosensitive material having a high sensitivity forms a small taper portion, the negative pattern has an overhang type two-step taper portion. . As a result, the step breakage of the thin film is more likely to occur, and better patterning than the first invention can be performed.
【００１０】本発明の第３の発明では、ポジパターンと
ネガパターンを形成する材料をポジ型，ネガ型と相異な
る感光材料とすることで一枚のマスクで加工を可能と
し、第１の発明が従来法に比べてマスク数が増えるとい
う欠点を補なうことができる。According to a third aspect of the present invention, the material for forming the positive pattern and the negative pattern is a photosensitive material different from that of the positive type and the negative type, which enables processing with a single mask. However, the disadvantage that the number of masks increases compared to the conventional method can be compensated.
【００１１】[0011]
【実施例】図１は本発明の第１の発明の実施例を示す工
程の要部断面図である。基板11(a)に例えばレジストの
ような第１の感光材料12(b)を塗布し、露光・現像して
ポジパターン13(c)を形成する。この時、ポジパターン1
3にはテーパ部分12aが形成される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a sectional view of the essential parts of a step showing the first embodiment of the present invention. A first photosensitive material 12 (b) such as a resist is applied to the substrate 11 (a), exposed and developed to form a positive pattern 13 (c). At this time, positive pattern 1
A taper portion 12a is formed on 3.
【００１２】次に第２の感光材料14(d)を塗布し、露光
・現像してネガパターン15(e)を形成する。次に第１の
感光材料12だけが溶ける溶剤に浸漬させると、基板11は
上には第２の感光材料14(f)だけが残る。この時、第２
の感光材料14の形状は、第１の感光材料12のテーパ部分
12aがそのまま逆転して転写された逆テーパ部分12bとな
っている。Next, a second photosensitive material 14 (d) is applied, exposed and developed to form a negative pattern 15 (e). Next, when the substrate 11 is immersed in a solvent in which only the first photosensitive material 12 is dissolved, only the second photosensitive material 14 (f) remains on the substrate 11. At this time, the second
The shape of the photosensitive material 14 is the tapered portion of the first photosensitive material 12.
12a is the reverse taper portion 12b which is directly transferred in reverse.
【００１３】次にメタル薄膜16(g)を形成すると、第２
の感光材料14の逆テーパ部分12bにより断切れを起こ
し、所望のメタルパターン17(h)が、ばりもかけもなく
精度良く形成できる。Next, when a metal thin film 16 (g) is formed, the second
The reverse taper portion 12b of the photosensitive material 14 causes breakage, and the desired metal pattern 17 (h) can be accurately formed without burring.
【００１４】なお、第１の感光材料12の感度及び露光・
現像条件を変えることによって第２の感光材料14の逆テ
ーパ部分12bが制御でき、メタル薄膜16の膜厚、必要寸
法精度に合った最適のリフトオフが行なえる。The sensitivity and exposure of the first photosensitive material 12
The reverse taper portion 12b of the second photosensitive material 14 can be controlled by changing the developing condition, and the optimum lift-off can be performed according to the film thickness of the metal thin film 16 and the required dimensional accuracy.
【００１５】図２は本発明の第２の発明の実施例を示す
工程の要部断面図である。基板21(a)に感度の悪い感光
材料23を塗布してプリベークした後、感度の良い感光材
料22を塗布してプリベークし、露光する(b)。この時、
感度の悪い感光材料23には大きなテーパ部分23aが形成
され、感度の良い感光材料22には、小さなテーパ部分22
aが形成されたポジパターン24(c)が形成できる。FIG. 2 is a sectional view of an essential part of a step showing the second embodiment of the present invention. A substrate 21 (a) is coated with a photosensitive material 23 having low sensitivity and prebaked, and then a photosensitive material 22 having high sensitivity is coated, prebaked, and exposed (b). At this time,
A large taper portion 23a is formed on the photosensitive material 23 having low sensitivity, and a small taper portion 22a is formed on the photosensitive material 22 having high sensitivity.
A positive pattern 24 (c) having a formed thereon can be formed.
【００１６】次に第３の感光材料25(d)を塗布して、露
光・現像しネガパターン26(e)を形成する。この時、第
３の感光材料25の形状は、小さなテーパ部分22aと大き
なテーパ部分23aとが逆転写されたオーバーハング状の
夫々のテーパ形状22b，23b(f)となる。次に第３の感光
材料25だけが溶けない溶剤でポジパターン24も溶解す
る。次にメタル薄膜27(g)を形成すると、大きな逆テー
パ部分23bで完全に断切れを起こし、第１の発明の例よ
りも高精度のメタルパターン28(h)が得られる。Next, a third photosensitive material 25 (d) is applied, exposed and developed to form a negative pattern 26 (e). At this time, the shape of the third photosensitive material 25 becomes the respective overhang-shaped tapered shapes 22b and 23b (f) in which the small tapered portion 22a and the large tapered portion 23a are reversely transferred. Next, the positive pattern 24 is also dissolved with a solvent in which only the third photosensitive material 25 is insoluble. Next, when the metal thin film 27 (g) is formed, the large reverse taper portion 23b is completely broken, and the metal pattern 28 (h) having a higher precision than that of the example of the first invention is obtained.
【００１７】図３は本発明の第３の発明の実施例を示す
工程の要部断面図である。基板31(a)にポジレジスト32
(b)を塗布し、ポジマスク33(c)で露光し現像するとポジ
パターン34(d)が形成できる。FIG. 3 is a sectional view of an essential part of a step showing the third embodiment of the present invention. Positive resist 32 on substrate 31 (a)
A positive pattern 34 (d) can be formed by applying (b), exposing with a positive mask 33 (c) and developing.
【００１８】次にネガレジスト35(e)を塗布し、前記ポ
ジマスク33で露光現像(f)するとネガパターン36(g)が形
成できる。ポジレジスト32もネガレジスト35もテーパ部
分32a，35aを有しているので、第１の発明と同様に逆テ
ーパ型のネガパターン36(h)を形成することができる。
市販のポジレジスト用剥離液はネガレジスト35を溶解し
ないネガパターン36の形成に問題はない。以下の工程
は、第１の発明と同様である。Next, a negative resist 35 (e) is applied and exposed and developed (f) with the positive mask 33 to form a negative pattern 36 (g). Since both the positive resist 32 and the negative resist 35 have the tapered portions 32a and 35a, it is possible to form the negative taper type negative pattern 36 (h) as in the first invention.
The commercially available positive resist stripper has no problem in forming the negative pattern 36 that does not dissolve the negative resist 35. The following steps are the same as in the first invention.
【００１９】[0019]
【発明の効果】以上説明したように本発明の第１の発明
は、第１の感光材料でポジパターンを形成した後、その
上に第２の感光材料でネガパターンを形成し、その後、
第１の感光材料を除去することで、逆テーパ型のリフト
形成が可能となり、対象膜が大きな膜厚であっても、ば
りやかけのない寸法精度の良好なリフトオフが可能とな
る。As described above, according to the first invention of the present invention, after the positive pattern is formed by the first photosensitive material, the negative pattern is formed thereon by the second photosensitive material, and thereafter,
By removing the first photosensitive material, an inverse taper type lift can be formed, and even if the target film has a large film thickness, lift-off with good dimensional accuracy without burrs or chips can be achieved.
【００２０】本発明の第２の発明は、ポジパターンの形
成において感度の悪い感光材料を下層に、感度の良い感
光材料をも上層に形成し、１回の露光でポジパターンを
形成することによって、第１の発明よりも切断れを起こ
しやすいオーバーハング型のリフト形成が可能となり、
さらに大きな膜厚の対象に対しても、ばりやかけのない
寸法精度がさらに良好なリフトオフが可能となる。In the second invention of the present invention, a light-sensitive material having a low sensitivity in forming a positive pattern is formed in a lower layer and a light-sensitive material having a high sensitivity is formed in an upper layer, and a positive pattern is formed by one exposure. It becomes possible to form an overhang type lift that is more susceptible to breakage than the first invention,
Even for an object having a larger film thickness, it is possible to perform lift-off with further excellent dimensional accuracy without burrs or chips.
【００２１】本発明の第３の発明は、ポジパターンをポ
ジレジストで、ネガパターンをネガレジストで、夫々形
成することでマスクが共用でき従来法と同様の１枚マス
クで良好なリフトオフが行なえることである。According to a third aspect of the present invention, a positive pattern is formed by using a positive resist and a negative pattern is formed by using a negative resist, so that a mask can be shared and good lift-off can be performed with a single mask similar to the conventional method. That is.
【図１】本発明の第１の発明の実施例を示す工程の要部
断面図である。FIG. 1 is a sectional view of a main part of a step showing an embodiment of the first invention of the present invention.
【図２】本発明の第２の発明の実施例を示す工程の要部
断面図である。FIG. 2 is a cross-sectional view of a main part of a step showing the second embodiment of the present invention.
【図３】本発明の第３の発明の実施例を示す工程の要部
断面図である。FIG. 3 is a cross-sectional view of a main part of a step showing the third embodiment of the present invention.
【図４】従来のリフトオフの工程を説明する要部の断面
図である。FIG. 4 is a cross-sectional view of a main part for explaining a conventional lift-off process.
【図５】図４におけるレジストが剥離する前後の断面図
である。5 is a cross-sectional view before and after the resist in FIG. 4 is peeled off.
11，21，31，41，50…基板、 12…第１の感光材料、
13，24，34…ポジパターン、 14…第２の感光材料、
15，26，36，43…ネガパターン、 16，27，44，51…メ
タル薄膜、 17，28，45…メタルパターン、 22…感度
の良い感光材料、23…感度の悪い感光材料、 25…第３
の感光材料、 33…ポジマスク、 42，52…レジスト、
53…ばり、 54…かけ。11, 21, 31, 41, 50 ... Substrate, 12 ... First photosensitive material,
13, 24, 34 ... Positive pattern, 14 ... Second photosensitive material,
15, 26, 36, 43 ... Negative pattern, 16, 27, 44, 51 ... Metal thin film, 17, 28, 45 ... Metal pattern, 22 ... Photosensitive material with high sensitivity, 23 ... Photosensitive material with low sensitivity, 25 ... No. Three
Photosensitive material, 33 ... Positive mask, 42, 52 ... Resist,
53 ... Burr, 54 ...
フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/302 Ｋ 8518−4Ｍ Continuation of the front page (51) Int.Cl. 5 Identification number Office reference number FI technical display location H01L 21/302 K 8518-4M
Claims (3)
の感光材料でポジパターンを形成した後、その上に第２
の感光材料でネガパターンを形成し、その後、前第１の
感光材料で形成したポジパターンを除去することにより
リフト形成することを特徴とするパターニング方法。1. A lift-off method for thin and thick films, comprising:
After forming a positive pattern with the photosensitive material of
Forming a negative pattern from the photosensitive material of 1), and then removing the positive pattern formed from the first photosensitive material to form a lift pattern.
の異なる感光材料のうち感度の悪い方の感光材料を下層
に、感度の良い方の感光材料を上層に形成した後、１回
の露光でポジパターンを形成することを特徴とする請求
項１記載のパターニング方法。2. In the formation of the positive pattern, a photosensitive material having a lower sensitivity among photosensitive materials having different sensitivities is formed as a lower layer and a photosensitive material having a higher sensitivity is formed as an upper layer, and then positive exposure is performed once. The patterning method according to claim 1, wherein a pattern is formed.
材料と、ネガパターンを形成する第２の感光材料が、互
いにポジ型，ネガ型と相異なる感光材料であることを特
徴とする請求項１記載のパターニング方法。3. The first photosensitive material forming the positive pattern and the second photosensitive material forming the negative pattern are photosensitive materials different from each other in the positive type and the negative type. 1. The patterning method according to 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19079192A JPH0637008A (en) | 1992-07-17 | 1992-07-17 | Patterning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19079192A JPH0637008A (en) | 1992-07-17 | 1992-07-17 | Patterning method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0637008A true JPH0637008A (en) | 1994-02-10 |
Family
ID=16263801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19079192A Pending JPH0637008A (en) | 1992-07-17 | 1992-07-17 | Patterning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0637008A (en) |
-
1992
- 1992-07-17 JP JP19079192A patent/JPH0637008A/en active Pending
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