JPH06334205A - Solar cell - Google Patents

Solar cell

Info

Publication number
JPH06334205A
JPH06334205A JP5146910A JP14691093A JPH06334205A JP H06334205 A JPH06334205 A JP H06334205A JP 5146910 A JP5146910 A JP 5146910A JP 14691093 A JP14691093 A JP 14691093A JP H06334205 A JPH06334205 A JP H06334205A
Authority
JP
Japan
Prior art keywords
layer
glass
photovoltaic
photovoltaic layer
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5146910A
Other languages
Japanese (ja)
Inventor
Akihiko Yoshida
昭彦 吉田
Masaki Ikeda
正樹 池田
Atsushi Nishino
西野　　敦
Takeshi Ishihara
健 石原
Yasuo Mizuno
康男 水野
Masahiro Hiraga
将浩 平賀
Haruhiko Handa
晴彦 半田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5146910A priority Critical patent/JPH06334205A/en
Publication of JPH06334205A publication Critical patent/JPH06334205A/en
Pending legal-status Critical Current

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Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a low price solar cell excellent in mechanical strength and weatherability by forming a glass layer directly onto a photovoltaic layer by printing or firing using a metal core substrate. CONSTITUTION:SiO2-B2O3-MgO-CaO based glass particle layers are formed on the opposite sides of SUS 430 plate and fired to produce a metal core board 3 of a metal substrate 1 and a glass ceramic layer 2 onto which a photovoltaic layer 4 of poly-Si and a pair of conductive electrodes 5, 6 are formed. A past composed of borosilicate based glass powder, methyl Cellosolve and terpineol is then printed at a part from the photovoltaic layer 4 to the glass ceramic layer 2 and dried and then it is fired at 600 deg.C to form a glass layer 7 for surface protection. This structure enhances mechanical strength, flexibility, and heat resistance while extemely limiting deterioration of transmittance of the protective layer due to dust at the time of outdoor use thus sustaining high photoelectric conversion efficiency for a long term.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、太陽電池に関するもの
であり、特にその基板および受光面側の保護層の改良に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell, and more particularly to improvement of a protective layer on a substrate and a light receiving surface of the solar cell.

【０００２】[0002]

【従来の技術】太陽電池は、電卓、腕時計などの電子機
器のエネルギー電源として広く用いられてきているが、
近年さらに、地球環境浄化や省エネルギーの観点から太
陽エネルギーの有効利用が望まれ、高効率、高強度、低
価格の新しい太陽電池の開発が求められている。従来の
太陽電池は、シリコンまたは化合物半導体を用いるもの
が主であり、ガラスのような絶縁性基板やステンレス鋼
基板に光電変換材料と導電性電極などを担持したもの
と、単結晶ウエハを処理した基板を用いないものに分類
される。単結晶Ｓｉを用いるものは、光電変換効率が２
０％近くあり、信頼性も高い。多結晶Ｓｉを用いるもの
は、変換効率は１６％程度で、単結晶を用いるものより
も低コストである。これに対しアモルファスＳｉを用い
るものは、変換効率は１５％程度であり、低コストで容
易に製造できるが、屋外で連続使用する場合耐候性の点
で改善の余地がある。ＧａＡｓのような化合物半導体を
用いるものは、変換効率は高いが、コスト、公害等の点
で改善の余地がある。2. Description of the Related Art Solar cells have been widely used as an energy source for electronic devices such as calculators and wristwatches.
Further, in recent years, effective use of solar energy is desired from the viewpoints of global environment purification and energy saving, and development of new solar cells with high efficiency, high strength and low cost is required. Conventional solar cells are mainly those using silicon or compound semiconductors, in which a photoelectric conversion material and a conductive electrode are carried on an insulating substrate such as glass or a stainless steel substrate, and a single crystal wafer is processed. It is classified as one that does not use a substrate. A photoelectric conversion efficiency of 2 using single crystal Si is
It is close to 0% and highly reliable. The one using polycrystalline Si has a conversion efficiency of about 16%, which is lower in cost than the one using single crystal. On the other hand, the one using amorphous Si has a conversion efficiency of about 15% and can be easily manufactured at low cost, but there is room for improvement in weather resistance when continuously used outdoors. The one using a compound semiconductor such as GaAs has a high conversion efficiency, but there is room for improvement in terms of cost, pollution and the like.

【０００３】これらの太陽電池は、特に屋外で使用され
るとき、光起電層がむき出しの状態であると、太陽光、
温度、湿度、塵挨などによる機能劣化が大きくなる。そ
こで、これを防止するために従来は、樹脂やガラスで光
起電層を被覆している。When these photovoltaic cells are used outdoors, if the photovoltaic layer is exposed, sunlight,
Functional deterioration due to temperature, humidity, dust, etc. increases. Therefore, in order to prevent this, conventionally, the photovoltaic layer is coated with resin or glass.

【０００４】[0004]

【発明が解決しようとする課題】光起電層の受光面側に
設ける保護層に樹脂を用いる場合は、塗布法などで容易
に形成できるが、例えば砂漠での砂などにより表面が粗
面化され、太陽光の透過率が大きく減少するという欠点
がある。また、ガラス板を光起電層上に配置する場合
は、ガラスの機械強度を保つために厚さ１ｍｍ以上のガ
ラスを用いる必要があり、素子全体が大きくなってしま
う。さらに、ガラス板の機械的破損は免れない。これら
の問題は、基板のサイズが大きくなるほど顕在化してく
る。本発明は、機械的な強度に優れ、低価格で、なおか
つ耐候性に優れた太陽電池を提供することを目的とす
る。When a resin is used for the protective layer provided on the light-receiving surface side of the photovoltaic layer, it can be easily formed by a coating method or the like, but the surface is roughened by sand in the desert, for example. However, there is a drawback in that the transmittance of sunlight is greatly reduced. Further, when the glass plate is arranged on the photovoltaic layer, it is necessary to use glass having a thickness of 1 mm or more in order to maintain the mechanical strength of the glass, and the size of the entire device becomes large. Moreover, mechanical damage to the glass plate is unavoidable. These problems become more serious as the size of the substrate increases. It is an object of the present invention to provide a solar cell which has excellent mechanical strength, low cost, and excellent weather resistance.

【０００５】[0005]

【課題を解決するための手段】本発明は、上記目的を達
成するため、表面にガラスセラミック層を形成した金属
基体、前記ガラスセラミック層上に設けた光起電層、前
記光起電層の少なくとも一部に接触して形成された一対
の導電性電極、および前記光起電層を被覆するガラスフ
リットの焼成物からなるガラス層により太陽電池を構成
するものである。ここにおいて、前記ガラス層の熱膨張
係数は光起電層のそれとほぼ同じであることが望まし
い。In order to achieve the above object, the present invention provides a metal substrate having a glass ceramic layer formed on the surface thereof, a photovoltaic layer provided on the glass ceramic layer, and a photovoltaic layer. A solar cell is constituted by a pair of conductive electrodes formed in contact with at least a part of the conductive layer, and a glass layer made of a fired product of a glass frit covering the photovoltaic layer. Here, the coefficient of thermal expansion of the glass layer is preferably substantially the same as that of the photovoltaic layer.

【０００６】また、本発明の太陽電池は、前記の構成に
光起電層の外周部を保護するガラス枠層を付加する。こ
の構成においては、ガラス枠層の熱膨張係数は、光起電
層のそれとガラス層のそれとの間の値であることが好ま
しい。前記のガラス層およびガラス枠層は、ガラスフリ
ット材料を印刷、塗布、ディップ、電気泳動電着のいず
れかの方法で所定の位置に担持させた後、焼成すること
によって形成することができる。In addition, in the solar cell of the present invention, a glass frame layer for protecting the outer peripheral portion of the photovoltaic layer is added to the above structure. In this configuration, the thermal expansion coefficient of the glass frame layer is preferably a value between that of the photovoltaic layer and that of the glass layer. The glass layer and the glass frame layer can be formed by supporting the glass frit material at a predetermined position by any method of printing, coating, dipping, and electrophoretic electrodeposition, and then firing.

【０００７】ガラス層の熱膨張係数は、（５０〜７０）
×１０-7／℃であることが好ましく、またガラス層の厚
さは２０〜１００μｍが好ましい。前記ガラスセラミッ
ク層の熱膨張係数は、（１００〜１５０）×１０-7／℃
であることが好ましい。また、ガラスセラミックは、Ｓ
ｉ、Ｂの酸化物をマトリクスとし、少なくともＣａ、Ｂ
ａ、Ｍｇと酸素とからなる複合酸化物の結晶層を有する
部分結晶化ガラスであることが好ましい。The coefficient of thermal expansion of the glass layer is (50 to 70).
It is preferably × 10 −7 / ° C., and the thickness of the glass layer is preferably 20 to 100 μm. The coefficient of thermal expansion of the glass ceramic layer is (100 to 150) × 10 −7 / ° C.
Is preferred. In addition, glass ceramic is S
i, B oxide as a matrix, at least Ca, B
It is preferably a partially crystallized glass having a crystal layer of a complex oxide composed of a, Mg and oxygen.

【０００８】[0008]

【作用】本発明によると、特に前記ガラス層を前記光起
電層上に印刷、焼成等の方法で直接形成されるため、耐
候性に優れ、屋外使用時においても砂などによる破損や
光透過率の低下が非常に少なくなる。また、基板にメタ
ルコア基板を用いているため、電池そのものが可撓性、
耐熱性、耐湿性に優れ、機械的強度が高く、種々の形状
にすることができる。さらに、ガラスセラミック層が高
耐熱性であるため、ＣＶＤなどの方法による光起電層の
製膜時にも基板にダメージを与えることなく安定した膜
を形成することができる。また、ガラス基板に較べると
メタルコア基板は非常に低価格である。According to the present invention, since the glass layer is directly formed on the photovoltaic layer by a method such as printing or firing, it has excellent weather resistance and is not damaged by sand or light transmission even when used outdoors. The rate drop is very small. Also, since the metal core substrate is used as the substrate, the battery itself is flexible,
It has excellent heat resistance and moisture resistance, high mechanical strength, and can be formed into various shapes. Furthermore, since the glass ceramic layer has high heat resistance, a stable film can be formed without damaging the substrate even when the photovoltaic layer is formed by a method such as CVD. Further, the metal core substrate is very low in price as compared with the glass substrate.

【０００９】[0009]

【実施例】以下に、本発明の実施例を詳細に説明する。 ［実施例１］厚さ５０μｍのステンレス鋼ＳＵＳ４３０
の板の両面に電気泳動電着法によってＳｉＯ2−Ｂ2Ｏ3
−ＭｇＯ−ＣａＯ系のガラス粒層を形成する。これを９
００℃で焼成し結晶化ガラス層とする。このガラス層
は、厚さが１００μｍ、表面粗さ（Ｒａ）が０．０５μ
ｍであり、耐熱性は８５０℃以上である。図１に示すよ
うに、このようにして得られた金属基体１とガラスセラ
ミック層２からなるメタルコア基板３の上に、多結晶Ｓ
ｉの光起電層４と一対の導電性電極５、６を形成する。
次に、光起電層４からその周縁部のガラスセラミック層
２にわたる部分に、ホウ珪酸鉛系ガラス（熱膨張係数が
７０×１０-7／℃）粉末、メチルセロソルブおよびテル
ピネオールから構成されるペーストを印刷して乾燥後、
６００℃で焼成し表面保護層のガラス層７を形成する。
ガラス層７の厚さは５０μｍである。EXAMPLES Examples of the present invention will be described in detail below. [Example 1] Stainless steel SUS430 having a thickness of 50 µm
Of SiO 2 -B 2 O 3 on both sides of the plate by the electrophoretic electrodeposition method.
-A MgO-CaO-based glass particle layer is formed. This is 9
It is fired at 00 ° C. to form a crystallized glass layer. This glass layer has a thickness of 100 μm and a surface roughness (Ra) of 0.05 μm.
m, and the heat resistance is 850 ° C. or higher. As shown in FIG. 1, polycrystalline S is formed on the metal core substrate 3 composed of the metal substrate 1 and the glass ceramic layer 2 thus obtained.
A photovoltaic layer 4 of i and a pair of conductive electrodes 5, 6 are formed.
Next, a paste composed of lead borosilicate glass (coefficient of thermal expansion of 70 × 10 −7 / ° C.) powder, methyl cellosolve and terpineol was applied to the portion extending from the photovoltaic layer 4 to the glass ceramic layer 2 at the periphery thereof. After printing and drying,
The glass layer 7 of the surface protective layer is formed by firing at 600 ° C.
The glass layer 7 has a thickness of 50 μm.

【００１０】［実施例２］実施例１と同じメタルコア基
板３の上に、図２に示すように、単結晶Ｓｉの光起電層
１４と導電性電極１５、１６を形成する。次に、光起電
層１４とその周縁部のガラスセラミック層２を覆うよう
に、電気泳動電着法によりホウ珪酸鉛系ガラス（熱膨張
係数が１００×１０-7／℃）粉末層を析出させ、乾燥
後、６００℃で焼成しガラス層１７を形成する。ガラス
層１７の厚さは７０μｍである。[Embodiment 2] On the same metal core substrate 3 as in Embodiment 1, as shown in FIG. 2, a photovoltaic layer 14 of single crystal Si and conductive electrodes 15 and 16 are formed. Next, a lead borosilicate glass (coefficient of thermal expansion: 100 × 10 −7 / ° C.) powder layer is deposited by an electrophoretic electrodeposition method so as to cover the photovoltaic layer 14 and the glass ceramic layer 2 around the photovoltaic layer 14. Then, after drying, the glass layer 17 is formed by baking at 600 ° C. The glass layer 17 has a thickness of 70 μm.

【００１１】［実施例３］実施例１と同じメタルコア基
板１の上に、図３に示すように、単結晶Ｓｉの光起電層
３４と導電性電極３５、３６を形成する。次に、光起電
層３４の外周部のガラスセラミック層２の上に、ホウ珪
酸鉛系ガラス（熱膨張係数が１００×１０-7／℃）粉
末、メチルセロソルブおよびテルピネオールよりなるペ
ーストを印刷し、乾燥後６００℃で焼成しガラス枠層３
８を形成する。ガラス枠層３８の厚さは１００μｍであ
る。さらに、ガラス枠層３８と光起電層３４の上に印
刷、焼成によりガラス層３７を形成する。ガラス層３７
の厚さは７０μｍであり、その熱膨張係数は１００×１
０-7／℃である。[Embodiment 3] On the same metal core substrate 1 as in Embodiment 1, as shown in FIG. 3, a photovoltaic layer 34 of single crystal Si and conductive electrodes 35, 36 are formed. Then, on the glass ceramic layer 2 of the outer peripheral portion of the photovoltaic layer 34, lead borosilicate based glass (thermal expansion coefficient of 100 × 10 - 7 / ℃) powder, and printing a paste consisting of methyl cellosolve and terpineol After drying, the glass frame layer 3 is fired at 600 ° C.
8 is formed. The thickness of the glass frame layer 38 is 100 μm. Further, the glass layer 37 is formed on the glass frame layer 38 and the photovoltaic layer 34 by printing and firing. Glass layer 37
Has a thickness of 70 μm and its thermal expansion coefficient is 100 × 1
It is 0 -7 / ° C.

【００１２】［実施例４］図４に示すように、実施例１
と同じ基板３に銀ペイント電極４５を複数個形成し、さ
らにＣＶＤ法によってＳｉの光起電層４４を複数個形成
する。次に、硝酸インジウム、シュウ酸第１スズ、アセ
チルアセトン、グリセリンおよびアセトンを出発原料と
して還流して得られた溶液に、前記の基板をディップ
し、５分間室温で放置し、１００℃で５分間乾燥した
後、室温から３０℃／分の速度で５００℃まで加熱昇温
し、５００℃で１時間保持する。この結果、基板の上に
厚さ８０ｎｍのＩＴＯ膜４６が形成される。さらに、ホ
ウ珪酸鉛系ガラス（熱膨張係数が７０×１０-7／℃）粉
末、メチルセロソルブおよびテルピネオールから構成さ
れるペーストを印刷し、乾燥後６００℃で焼成しガラス
層４７を形成する。ガラス層４７の厚さは５０μｍであ
る。[Embodiment 4] As shown in FIG.
A plurality of silver paint electrodes 45 are formed on the same substrate 3, and a plurality of Si photovoltaic layers 44 are further formed by the CVD method. Next, the substrate is dipped in a solution obtained by refluxing indium nitrate, stannous oxalate, acetylacetone, glycerin and acetone as starting materials, left at room temperature for 5 minutes, and dried at 100 ° C. for 5 minutes. After that, the temperature is raised from room temperature to 500 ° C. at a rate of 30 ° C./min, and the temperature is maintained at 500 ° C. for 1 hour. As a result, the ITO film 46 having a thickness of 80 nm is formed on the substrate. Further, a paste composed of lead borosilicate glass (coefficient of thermal expansion: 70 × 10 −7 / ° C.) powder, methyl cellosolve and terpineol is printed, dried and baked at 600 ° C. to form a glass layer 47. The glass layer 47 has a thickness of 50 μm.

【００１３】上記実施例の太陽電池は、それぞれ用いた
太陽電池素子のもつ変換効率を示し、しかも機械的強度
が大きく、耐候性に優れている。実施例は、基板として
ステンレス鋼板の両面にＳｉＯ2ーＢ2Ｏ3ーＭｇＯーＣ
ａＯ系の部分結晶化ガラス層を形成したものを用いた
が、金属基体の種類やガラスの種類などこの範囲に限定
されるものではない。また、ガラスセラミック層を金属
基体の片面に形成したものも有効である。The solar cells of the above examples show the conversion efficiency of the solar cell elements used, have high mechanical strength, and are excellent in weather resistance. In the example, SiO 2 —B 2 O 3 —MgO—C was formed on both sides of a stainless steel plate as a substrate.
Although an aO-based partially crystallized glass layer is used, the type of metal substrate and the type of glass are not limited to this range. Further, a glass ceramic layer formed on one side of a metal substrate is also effective.

【００１４】[0014]

【発明の効果】本発明の太陽電池は、金属基体にガラス
セラミック層を形成したいわゆるメタルコア基板を用
い、表面保護層に光起電層上に印刷焼成法などにより直
接形成したガラス層を用いているため、機械的強度、可
撓性、耐熱性などに優れ、屋外使用時の砂ほこりなどに
よる保護層の光透過率減少も非常に小さく、長期間にわ
たって高い光電変換効率を維持できる。INDUSTRIAL APPLICABILITY The solar cell of the present invention uses a so-called metal core substrate in which a glass ceramic layer is formed on a metal substrate, and uses a glass layer directly formed on the photovoltaic layer as a surface protection layer by a printing firing method or the like. Therefore, it has excellent mechanical strength, flexibility, heat resistance, and the like, and the decrease in light transmittance of the protective layer due to sand dust during outdoor use is very small, and high photoelectric conversion efficiency can be maintained for a long period of time.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の太陽電池の一実施例の構成を示す縦断
面図である。FIG. 1 is a vertical sectional view showing a configuration of an embodiment of a solar cell of the present invention.

【図２】本発明の太陽電池の他の実施例の構成を示す縦
断面図である。FIG. 2 is a vertical cross-sectional view showing the configuration of another embodiment of the solar cell of the present invention.

【図３】本発明の太陽電池の他の実施例の構成を示す縦
断面図である。FIG. 3 is a vertical cross-sectional view showing the configuration of another embodiment of the solar cell of the present invention.

【図４】本発明の太陽電池の他の実施例の構成を示す縦
断面図である。FIG. 4 is a vertical cross-sectional view showing the configuration of another embodiment of the solar cell of the present invention.

【符号の説明】[Explanation of symbols]

１ 金属基体 ２ ガラスセラミック層 ３ 基板 ４ 光起電層 ５、６ 導電性電極 ７ ガラス層 1 Metal Substrate 2 Glass Ceramic Layer 3 Substrate 4 Photovoltaic Layer 5, 6 Conductive Electrode 7 Glass Layer

───────────────────────────────────────────────────── フロントページの続き (72)発明者 石原 健 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 水野 康男 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 平賀 将浩 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 半田 晴彦 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Ken Ishihara Ken 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Inventor Yasuo Mizuno 1006 Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd. 72) Inventor Masahiro Hiraga 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Haruhiko Handa 1006 Kadoma, Kadoma City Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】 表面にガラスセラミック層を形成した金
属基体、前記ガラスセラミック層上に設けた光起電層、
前記光起電層の少なくとも一部に接触して形成された一
対の導電性電極、および前記光起電層を被覆するガラス
フリットの焼成物からなるガラス層を具備する太陽電
池。1. A metal substrate having a glass ceramic layer formed on the surface thereof, a photovoltaic layer provided on the glass ceramic layer,
A solar cell comprising a pair of conductive electrodes formed in contact with at least a part of the photovoltaic layer, and a glass layer made of a fired product of a glass frit covering the photovoltaic layer. 【請求項２】 表面にガラスセラミック層を形成した金
属基体、前記ガラスセラミック層上に設けた光起電層、
前記光起電層の少なくとも一部に接触して形成された一
対の導電性電極、前記光起電層の外周部において前記ガ
ラスセラミック層上に設けたガラスフリットの焼成物か
らなるガラス枠層、および前記光起電層を被覆するとと
もに光起電層から前記ガラス枠層にまたがって形成した
ガラスフリットの焼成物からなるガラス層を具備する太
陽電池。2. A metal substrate having a glass ceramic layer formed on the surface thereof, a photovoltaic layer provided on the glass ceramic layer,
A pair of conductive electrodes formed in contact with at least a portion of the photovoltaic layer, a glass frame layer made of a fired product of a glass frit provided on the glass ceramic layer in the outer peripheral portion of the photovoltaic layer, And a solar cell comprising a glass layer formed of a fired product of a glass frit which covers the photovoltaic layer and extends from the photovoltaic layer to the glass frame layer. 【請求項３】 前記ガラス層の熱膨張係数が、光起電層
のそれとほぼ同じである請求項１記載の太陽電池。3. The solar cell according to claim 1, wherein the glass layer has a coefficient of thermal expansion substantially the same as that of the photovoltaic layer. 【請求項４】 前記ガラス枠層の熱膨張係数が、前記光
起電層のそれと前記ガラスセラミック層のそれとの間の
値である請求項２記載の太陽電池。4. The solar cell according to claim 2, wherein the coefficient of thermal expansion of the glass frame layer is a value between that of the photovoltaic layer and that of the glass ceramic layer.
JP5146910A 1993-05-25 1993-05-25 Solar cell Pending JPH06334205A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5146910A JPH06334205A (en) 1993-05-25 1993-05-25 Solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5146910A JPH06334205A (en) 1993-05-25 1993-05-25 Solar cell

Publications (1)

Publication Number Publication Date
JPH06334205A true JPH06334205A (en) 1994-12-02

Family

ID=15418336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5146910A Pending JPH06334205A (en) 1993-05-25 1993-05-25 Solar cell

Country Status (1)

Country Link
JP (1) JPH06334205A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2374139A (en) * 2001-02-01 2002-10-09 Kuldip Singh Virk Solar energy system suitable for use on a pitched roof
US7253355B2 (en) 2001-12-20 2007-08-07 Rwe Schott Solar Gmbh Method for constructing a layer structure on a substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2374139A (en) * 2001-02-01 2002-10-09 Kuldip Singh Virk Solar energy system suitable for use on a pitched roof
GB2374139B (en) * 2001-02-01 2004-08-25 Kuldip Singh Virk Solar energy systems
US7253355B2 (en) 2001-12-20 2007-08-07 Rwe Schott Solar Gmbh Method for constructing a layer structure on a substrate

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