JPH06316786A - Water-soluble iridium plating bath and plating method using the same - Google Patents

Water-soluble iridium plating bath and plating method using the same

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Publication number
JPH06316786A
JPH06316786A JP12467293A JP12467293A JPH06316786A JP H06316786 A JPH06316786 A JP H06316786A JP 12467293 A JP12467293 A JP 12467293A JP 12467293 A JP12467293 A JP 12467293A JP H06316786 A JPH06316786 A JP H06316786A
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JP
Japan
Prior art keywords
iridium
plating
plating bath
water
acid
Prior art date
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Granted
Application number
JP12467293A
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Japanese (ja)
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JP3256912B2 (en
Inventor
Yumiko Saito
由美子 斉藤
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EEJA Ltd
Original Assignee
Electroplating Engineers of Japan Ltd
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Priority to JP12467293A priority Critical patent/JP3256912B2/en
Publication of JPH06316786A publication Critical patent/JPH06316786A/en
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Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To provide a stable water-soluble iridium plating bath having a long service life, high current efficiency and a high plating rate and a plating method using the plating bath. CONSTITUTION:This water-soluble iridium plating bath contains an iridium compd. obtd. by adding one or more kinds of compds. selected from among satd. monocarboxylic acid, its salt, said. dicarboxylic acid, its salt, satd. hydroxycarboxylic acid, its salt, prim. amide and urea to an iridium (III) complex salt whose anionic component is halogen and stirring them. When this plating bath is used, a surface coating film of alumite can be made dense.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は水溶性イリジウムめっ
き浴及びそのめっき方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a water-soluble iridium plating bath and its plating method.

【0002】[0002]

【従来の技術】イリジウムは、高い硬度を有するととも
に、高濃度の酸や王水、もしくはハロゲン類に対しても
優れた耐腐食性を示す金属であるが、その希少性と加工
の困難性のため工業用としてあまり使われておらず、そ
の応用範囲は所定の金属の硬化剤や触媒等に限られてい
た。しかし、近年のめっき技術の発展に伴い、イリジウ
ムめっきを装飾品のみならず防腐食材及び電気接点等の
材料として工業的に広く利用する技術が開発されてきて
いる。
2. Description of the Related Art Iridium is a metal having high hardness and excellent corrosion resistance to high concentrations of acid, aqua regia, and halogens, but its rarity and the difficulty of processing it. Therefore, it has not been used for industrial use so much, and its application range was limited to hardeners and catalysts for specified metals. However, with the development of plating technology in recent years, a technology for industrially widely using iridium plating as a material for not only ornaments but also anticorrosion materials and electrical contacts has been developed.

【0003】従来の水溶性イリジウムめっき浴の例とし
ては、イリジウム化合物としてヘキサクロロイリジウム
(III )酸塩、ヘキサクロロイリジウム(IV)酸塩、塩
化イリジウム(III )酸塩、硫酸イリジウム(III )酸
塩、硫酸イリジウム(IV)酸塩、その他イリジウムの硝
酸塩や亜硝酸塩を用いたものが知られている。
Examples of conventional water-soluble iridium plating baths include hexachloroiridium (III) salts, hexachloroiridium (IV) salts, iridium chloride (III) salts, and iridium sulfate (III) salts as iridium compounds. It is known to use iridium (IV) sulfate and other iridium nitrates and nitrites.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、このよ
うな従来の水溶性イリジウムめっき浴にあっては、陽極
側で酸化物が発生したり、めっき液が不安定で分解した
りしやすいという問題があった。加えて、電流効率も最
大で65パーセント程度しかなく、更にまた非常に低い
電流密度でしか最大析出効率が得られないため、めっき
速度が非常に小さいという問題もあった。また、この従
来の水溶性イリジウムめっき浴は、めっき速度が一定で
ないという問題もあり、これは実用的な膜厚が安定して
得られないということにつながるものである。このよう
に、従来の水溶性イリジウムめっき浴はあまり実用的で
はなく、この点が、工業用としてイリジウムめっきがあ
まり広く利用されていない一因となっていた。
However, in such a conventional water-soluble iridium plating bath, there are problems that oxides are generated on the anode side and the plating solution is unstable and easily decomposed. there were. In addition, the current efficiency is only about 65% at maximum, and the maximum deposition efficiency can be obtained only at a very low current density, so that there is a problem that the plating rate is very low. Further, this conventional water-soluble iridium plating bath also has a problem that the plating rate is not constant, which leads to the fact that a practical film thickness cannot be obtained stably. As described above, the conventional water-soluble iridium plating bath is not very practical, which is one reason why iridium plating is not widely used for industrial purposes.

【0005】本発明は、このような従来の技術に着目し
てなされたものであり、安定で分解しにくく、高い電流
効率と速いめっき速度を有する実用的な水溶性イリジウ
ムめっき浴を提供するものである。
The present invention has been made by paying attention to such a conventional technique, and provides a practical water-soluble iridium plating bath which is stable and difficult to decompose, has a high current efficiency and a high plating rate. Is.

【0006】[0006]

【課題を解決するための手段】この発明に係る水溶性イ
リジウムめっき浴は、イリジウム化合物として、アニオ
ン成分がハロゲンであるイリジウム(III )錯塩に、飽
和モノカルボン酸、飽和モノカルボン酸塩、飽和ジカル
ボン酸、飽和ジカルボン酸塩、飽和ヒドロキシカルボン
酸、飽和ヒドロキシカルボン酸塩、第1アミド、尿素か
らなる群より選ばれた一種以上の化合物を加え攪拌した
ものを使用するものとしている。
The water-soluble iridium plating bath according to the present invention comprises, as an iridium compound, an iridium (III) complex salt whose anion component is halogen, a saturated monocarboxylic acid, a saturated monocarboxylic acid salt and a saturated dicarboxylic acid salt. It is assumed that one or more compounds selected from the group consisting of an acid, a saturated dicarboxylic acid salt, a saturated hydroxycarboxylic acid, a saturated hydroxycarboxylic acid salt, a primary amide, and urea are added and stirred.

【0007】そして、イリジウムは金属イリジウム濃度
で1〜200g/l含有するものとし、好ましくは10
〜20g/l存在させることができる。イリジウム濃度
が1g/lより少ないと電流密度の上限が小さくなって
実用に供することが難しくなり、200g/lより多い
と飽和してイリジウムが溶解できなくなるとともにコス
トが高価になり実用上不適となる。イリジウム(III )
錯塩としては、ヘキサクロロイリジウム(III )酸塩、
ヘキサブロモイリジウム(III )酸塩、ヘキサフルオロ
イリジウム(III )酸塩〔好ましくはヘキサブロモイリ
ジウム(III )酸ナトリウム、ヘキサクロロイリジウム
(III )酸ナトリウム〕等を採用できる。
Iridium is contained in a metal iridium concentration of 1 to 200 g / l, preferably 10
~ 20 g / l can be present. If the iridium concentration is less than 1 g / l, the upper limit of the current density becomes small, making it difficult to put into practical use. If the iridium concentration is more than 200 g / l, it becomes saturated and iridium cannot be dissolved, and the cost becomes high, making it unsuitable for practical use. . Iridium (III)
As the complex salt, hexachloroiridium (III) salt,
Hexabromoiridium (III) acid salt, hexafluoroiridium (III) acid salt [preferably sodium hexabromoiridium (III) acid, sodium hexachloroiridium (III) acid] and the like can be employed.

【0008】更に、飽和モノカルボン酸、飽和モノカル
ボン酸塩、飽和ジカルボン酸、飽和ジカルボン酸塩、飽
和ヒドロキシカルボン酸、飽和ヒドロキシカルボン酸
塩、第1アミド、尿素からなる群より選ばれた一種以上
の化合物は、0.001〜1.0mol/l添加するも
のとし、好ましくは0.01〜0.2mol/l添加す
るようにしている。そして、この化合物としては例えば
マロン酸二ナトリウム、酢酸、シュウ酸等を採用でき
(好ましくはマロン酸二ナトリウム)、その添加量を
0.001〜1.0mol/lとしたのは、0.001
mol/lより少ないと添加による効果がほとんど現れ
ないためであり、1.0mol/lより多いと析出が妨
げられるためである。
Further, one or more selected from the group consisting of saturated monocarboxylic acid, saturated monocarboxylic acid salt, saturated dicarboxylic acid, saturated dicarboxylic acid salt, saturated hydroxycarboxylic acid, saturated hydroxycarboxylic acid salt, primary amide, and urea. The compound (1) is added in an amount of 0.001 to 1.0 mol / l, preferably 0.01 to 0.2 mol / l. And, as this compound, for example, disodium malonate, acetic acid, oxalic acid, etc. can be adopted (preferably disodium malonate), and the addition amount thereof is 0.001-1.0 mol / l is 0.001
This is because if it is less than mol / l, the effect of the addition hardly appears, and if it is more than 1.0 mol / l, precipitation is prevented.

【0009】更にまた、本発明に係る水溶性イリジウム
めっき方法は、操作条件をpH1〜8、温度50〜98
℃、電流密度0.01〜3.0A/dm2 とし、好まし
くはPH4〜5、温度80〜90℃、電流密度0.1〜
0.2A/dm2 の操作条件で用いる。PH1〜8とし
たのは、PHが1より小さいと電流密度の上限が小さく
なって実用的でなくなるためであり、PHが8より大き
いと水酸化物を生成し沈殿が生ずるからである。そして
温度が50℃より低いと極端に析出が起こりにくくな
り、温度が98℃より高いと水の蒸発が激しくなり実用
上好ましくなくなる。そしてまた、電流密度が0・01
A/dm2 より低い場合は析出速度が極端に小さくな
り、3・0A/dm2 より高い電流密度の場合は水素の
発生が起こり、析出物が析出しなくなる。
Furthermore, in the water-soluble iridium plating method according to the present invention, the operating conditions are pH 1-8 and temperature 50-98.
C, current density 0.01 to 3.0 A / dm 2 , preferably PH 4 to 5, temperature 80 to 90 ° C., current density 0.1.
Used under operating conditions of 0.2 A / dm 2 . The reason why the pH is set to 1 to 8 is that if the PH is less than 1, the upper limit of the current density becomes small and it becomes unpractical, and if the PH is more than 8, hydroxide is generated and precipitation occurs. When the temperature is lower than 50 ° C., precipitation hardly occurs, and when the temperature is higher than 98 ° C., water is vigorously evaporated, which is not preferable for practical use. And again, the current density is 0.01
When it is lower than A / dm 2, the deposition rate becomes extremely small, and when the current density is higher than 3.0 A / dm 2 , hydrogen is generated and the deposit does not deposit.

【0010】[0010]

【実施例】次に実施例によってこの発明を更に詳細に説
明する。実施例1 ヘキサブロモイリジウム(III )酸ナトリウム(メタル濃度で)10g/l ホウ酸 40g/l マロン酸二ナトリウム 0.02mol/l pH 5.0 温度 85℃ 電流密度 0.15A/dm2 本実施例では、イリジウム化合物として、上記ヘキサブ
ロモイリジウム(III)酸ナトリウムに、「ジカルボン
酸塩」としてのマロン酸二ナトリウムを加え、ホットバ
スで85℃に保ちながらマグネチックスターラで1時間
攪拌したものを用いた。そして、予め真鍮片に金ストラ
イクめっきを施し、更にその上に1μmの金めっきを施
した試験片に、上記の条件でめっきを行なったところ、
膜厚が8μmの光沢ある析出物が得られた。そしてこの
析出物は硬度、密着性、耐熱性、ボンディング性等にお
いて実用上十分な特性を備えていることが確認できた。
また、電流効率は100%であり、めっき速度は1.5
μm/hであった。
The present invention will be described in more detail with reference to the following examples. Example 1 Sodium hexabromoiridium (III) (at metal concentration) 10 g / l Boric acid 40 g / l Disodium malonate 0.02 mol / l pH 5.0 Temperature 85 ° C. Current density 0.15 A / dm 2 Conducted In the example, as an iridium compound, disodium malonate as a “dicarboxylate” was added to the above sodium hexabromoiridium (III), and the mixture was stirred with a magnetic stirrer for 1 hour while maintaining the temperature at 85 ° C. in a hot bath. Using. Then, a brass piece was subjected to gold strike plating in advance, and a test piece having 1 μm of gold plated thereon was plated under the above conditions,
A glossy precipitate with a film thickness of 8 μm was obtained. It was confirmed that this precipitate has practically sufficient characteristics in terms of hardness, adhesion, heat resistance, bondability, and the like.
The current efficiency is 100% and the plating rate is 1.5.
It was μm / h.

【0011】なお、上記と同様の組成及び条件におい
て、マロン酸二ナトリウムを以下の化合物に代えてそれ
ぞれめっきを行なったところ、次のような結果が得られ
た。即ち「モノカルボン酸」としての酢酸0.2mol
/lを用いた場合は電流効率81%、膜厚1.9 μ
m、めっき速度1.2μm/hとなり、「ジカルボン
酸」としてのシュウ酸0.02mol/lを用いた場合
は電流効率93%、膜厚2.6μm、めっき速度1.4
μm/hとなった。そしてまた「ヒドロキシカルボン
酸」としての酒石酸0.2mol/lを用いた場合は電
流効率74%、膜厚1.1μm、めっき速度1.1μm
/hとなり、「ヒドロキシカルボン酸塩」としてのクエ
ン酸二ナトリウム0.2mol/lを用いた場合は電流
効率87%、膜厚2.8μm、めっき速度1.3μm/
hとなった。外観等の他の特性に関してはそれぞれ上記
マロン酸ニナトリウムを用いた場合と同様の効果が得ら
れた。
The following results were obtained when plating was performed under the same composition and conditions as described above, substituting the following compounds for disodium malonate. That is, 0.2 mol of acetic acid as "monocarboxylic acid"
/ L used current efficiency 81%, film thickness 1.9μ
m, plating rate 1.2 μm / h, when using oxalic acid 0.02 mol / l as “dicarboxylic acid”, current efficiency 93%, film thickness 2.6 μm, plating rate 1.4
μm / h. And when tartaric acid 0.2 mol / l as "hydroxycarboxylic acid" is used, current efficiency is 74%, film thickness is 1.1 μm, plating rate is 1.1 μm.
/ H, and when using 0.2 mol / l of disodium citrate as the “hydroxycarboxylic acid salt”, current efficiency was 87%, film thickness was 2.8 μm, plating rate was 1.3 μm /
It became h. With respect to other characteristics such as appearance, the same effects as in the case of using the above disodium malonate were obtained.

【0012】実施例2 ヘキサクロロイリジウム(III )酸ナトリウム(メタル濃度で)10g/l ホウ酸 40g/l マロン酸二ナトリウム 0.02mol/l pH 5 温度 85℃ 電流密度 0.15A/dm2 本実施例では、イリジウム化合物として、上記ヘキサク
ロロイリジウム(III)酸ナトリウムに、マロン酸二ナ
トリウムを加え、ホットバスで85℃に保ちながらマグ
ネチックスターラで30分攪拌したものを用いた。そし
て、予め真鍮片に金ストライクめっきを施し、更にその
上に1μmの金めっきを施した試験片に、上記の条件で
めっきを行なったところ、膜厚が3μmの光沢ある析出
物が得られた。そしてこの析出物は硬度、密着性、耐熱
性、ボンディング性等において実用上十分な特性を備え
ていることが確認できた。また、電流効率は98%であ
り、めっき速度は1.5μm/hであった。
Example 2 Sodium hexachloroiridium (III) (at metal concentration) 10 g / l Boric acid 40 g / l Disodium malonate 0.02 mol / l pH 5 Temperature 85 ° C. Current density 0.15 A / dm 2 Implementation In the example, as the iridium compound, there was used one obtained by adding disodium malonate to the above sodium hexachloroiridium (III) and stirring the mixture with a magnetic stirrer for 30 minutes while maintaining the temperature at 85 ° C. in a hot bath. Then, a brass piece was gold-strike plated in advance, and a test piece having 1 μm of gold plated thereon was plated under the above conditions, and a glossy precipitate having a film thickness of 3 μm was obtained. . It was confirmed that this precipitate has practically sufficient characteristics in terms of hardness, adhesion, heat resistance, bondability, and the like. The current efficiency was 98%, and the plating rate was 1.5 μm / h.

【0013】なお、上記と同様の組成及び条件におい
て、マロン酸二ナトリウムに代えて「モノカルボン酸
塩」としてのプロピオン酸ナトリウム0.2mol/l
を用いたところ、電流効率60%、膜厚0.1μm、め
っき速度0.9μm/hとなり、外観等の他の特性に関
しては上記マロン酸ニナトリウムを用いた場合と同様の
効果が得られた。
Under the same composition and conditions as described above, sodium propionate 0.2 mol / l as "monocarboxylate" was used instead of disodium malonate.
The current efficiency was 60%, the film thickness was 0.1 μm, and the plating rate was 0.9 μm / h. With respect to other characteristics such as appearance, the same effects as those obtained by using the disodium malonate were obtained. .

【0014】実施例3 ヘキサブロモイリジウム(III )酸ナトリウム(メタル濃度で)10g/l ホウ酸 40g/l マロン酸二ナトリウム 0.02mol/l pH 5 温度 85℃ 電流密度 0.5A/dm2 本実施例では、イリジウム化合物として、上記ヘキサブ
ロモイリジウム(III)酸ナトリウムに、マロン酸二ナ
トリウムを加え、ホットバスで85℃に保ちながらマグ
ネチックスターラで1時間攪拌したものを用いた。そし
て、予め真鍮片に金ストライクめっきを施し、更にその
上に1μmの金めっきを施した試験片に、上記の条件で
めっきを行なったところ、膜厚が5μmの光沢ある析出
物が得られた。そしてこの析出物は硬度、密着性、耐熱
性、ボンディング性等において実用上十分な特性を備え
ていることが確認できた。また、電流効率は90%であ
り、めっき速度は5μm/hであった。
Example 3 Sodium hexabromoiridium (III) (at metal concentration) 10 g / l Boric acid 40 g / l Disodium malonate 0.02 mol / l pH 5 Temperature 85 ° C. Current density 0.5 A / dm 2 pieces In the examples, as the iridium compound, the one obtained by adding disodium malonate to the above-mentioned sodium hexabromoiridium (III) and stirring the mixture for 1 hour with a magnetic stirrer while keeping it at 85 ° C. in a hot bath was used. A brass piece was gold-strike plated in advance, and a test piece having 1 μm of gold plated thereon was plated under the above conditions. As a result, a glossy precipitate having a film thickness of 5 μm was obtained. . It was confirmed that this precipitate has practically sufficient characteristics in terms of hardness, adhesion, heat resistance, bondability, and the like. The current efficiency was 90%, and the plating rate was 5 μm / h.

【0015】実施例4 ヘキサブロモイリジウム(III )酸ナトリウム(メタル濃度で)10g/l ホウ酸 40g/l マロンアミド 0.2mol/l pH 5 温度 85℃ 電流密度 0.15A/dm2 本実施例では、イリジウム化合物として、上記ヘキサブ
ロモイリジウム(III)酸ナトリウムに、マロンアミド
を加え、ホットバスで85℃に保ちながらマグネチック
スターラで1時間攪拌したものを用いた。そして、予め
真鍮片に金ストライクめっきを施し、更にその上に1μ
mの金めっきを施した試験片に、上記の条件でめっきを
行なったところ、膜厚が3μmの光沢ある析出物が得ら
れた。そしてこの析出物は硬度、密着性、耐熱性、ボン
ディング性等、実用上十分な特性を備えていることが確
認できた。また、電流効率は84%であり、めっき速度
は1.2μm/hであった。
Example 4 Sodium hexabromoiridium (III) (at metal concentration) 10 g / l Boric acid 40 g / l Malonamide 0.2 mol / l pH 5 Temperature 85 ° C. Current density 0.15 A / dm 2 In this example As the iridium compound, the one obtained by adding malonamide to the above sodium hexabromoiridium (III) and stirring the mixture with a magnetic stirrer for 1 hour while maintaining the temperature at 85 ° C. in a hot bath was used. Then, gold strike plating is applied to the brass piece in advance, and 1 μm is further applied on it.
When a m-plated test piece was plated under the above conditions, a glossy precipitate having a film thickness of 3 μm was obtained. It was confirmed that this precipitate had practically sufficient characteristics such as hardness, adhesion, heat resistance, and bondability. The current efficiency was 84%, and the plating rate was 1.2 μm / h.

【0016】なお、上記と同様の組成及び条件におい
て、マロンアミドに代えてプロピオンアミド0.2mo
l/lを用いてめっきを行なったところ、電流効率77
%、膜厚0.1μm、めっき速度1.2μm/hとな
り、同じくマロンアミドに代えて尿素0.2mol/l
を用いたところ、電流効率85%、膜厚2.8μm、め
っき速度1.3μm/hとなった。外観等の他の特性に
関しては上記マロンアミドを用いた場合と同様の効果が
得られた。
Under the same composition and conditions as described above, propionamide 0.2 mo was used instead of malonamide.
When plating was performed using 1 / l, the current efficiency was 77
%, Film thickness 0.1 μm, plating rate 1.2 μm / h, and urea 0.2 mol / l instead of malonamide.
Was used, the current efficiency was 85%, the film thickness was 2.8 μm, and the plating rate was 1.3 μm / h. With respect to other characteristics such as appearance, the same effects as those obtained when the above malonamide was used were obtained.

【0017】比較例 実施例1と同様の組成及び条件において、マロン酸二ナ
トリウムを下記化合物に代えてそれぞれめっきを行なっ
たところ、次のような結果が得られた。即ち不飽和カル
ボン酸としてアクリル酸0.2mol/lを用いた場合
は電流効率0%、同じくマレイン酸を用いた場合も電流
効率0%となった。更に、第2アミド(酸イミド)とし
てスクシンイミド0.2mol/lを用いた場合は電流
効率0%であった。更にまた、アミノ酸としてグリシン
0.2mol/lを用いた場合は電流効率59%、L−
アスパラギン酸0.2mol/lを用いた場合は電流効
率0%、L−アルギニン0.2mol/lを用いた場合
は電流効率0%であった。
Comparative Example Under the same composition and conditions as in Example 1, plating was carried out by replacing disodium malonate with the following compound, and the following results were obtained. That is, the current efficiency was 0% when 0.2 mol / l of acrylic acid was used as the unsaturated carboxylic acid, and the current efficiency was 0% when maleic acid was also used. Furthermore, when succinimide 0.2 mol / l was used as the second amide (acid imide), the current efficiency was 0%. Furthermore, when glycine 0.2 mol / l was used as the amino acid, the current efficiency was 59%, L-
The current efficiency was 0% when aspartic acid 0.2 mol / l was used, and the current efficiency was 0% when L-arginine 0.2 mol / l was used.

【0018】[0018]

【発明の効果】以上説明したように、本発明にかかる水
溶性イリジウムめっき浴及びそのめっき方法は、飽和モ
ノカルボン酸、飽和モノカルボン酸塩、飽和ジカルボン
酸、飽和ジカルボン酸塩、飽和ヒドロキシカルボン酸、
飽和ヒドロキシカルボン酸塩、第1アミド、尿素からな
る群より選ばれた一種以上の化合物を加えて反応させた
イリジウム(III )錯塩を用いることによって、めっき
浴が分解しにくくなり、浴の安定性が増すという効果が
ある。そしてまた、本発明にかかるめっき浴及びそのめ
っき方法は、電流効率の減少の割合を非常に小さく抑え
ることができるため実用的なめっき速度が得られるとと
もに、最大100%の電流効率が得られるという効果が
ある。
As described above, the water-soluble iridium plating bath according to the present invention and the plating method therefor are a saturated monocarboxylic acid, a saturated monocarboxylic acid salt, a saturated dicarboxylic acid, a saturated dicarboxylic acid salt, and a saturated hydroxycarboxylic acid. ,
By using an iridium (III) complex salt obtained by reacting with one or more compounds selected from the group consisting of saturated hydroxycarboxylic acid salt, primary amide and urea, the plating bath is less likely to decompose and the stability of the bath is improved. The effect is to increase. Further, the plating bath and the plating method thereof according to the present invention can suppress the reduction rate of the current efficiency to a very small level, so that a practical plating speed can be obtained and a current efficiency of up to 100% can be obtained. effective.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 アニオン成分がハロゲンであるイリジウ
ム(III )錯塩に、飽和モノカルボン酸、飽和モノカル
ボン酸塩、飽和ジカルボン酸、飽和ジカルボン酸塩、飽
和ヒドロキシカルボン酸、飽和ヒドロキシカルボン酸
塩、第1アミド、尿素からなる群より選ばれた一種以上
の化合物を加えて撹拌したものを、イリジウム化合物と
して用いる水溶性イリジウムめっき浴。
1. An iridium (III) complex salt whose anion component is halogen is added to a saturated monocarboxylic acid, saturated monocarboxylic acid salt, saturated dicarboxylic acid, saturated dicarboxylic acid salt, saturated hydroxycarboxylic acid, saturated hydroxycarboxylic acid salt, A water-soluble iridium plating bath in which one or more compounds selected from the group consisting of 1 amide and urea are added and stirred and used as an iridium compound.
【請求項2】 金属イリジウム濃度が1〜200g/l
である、請求項1記載の水溶性イリジウムめっき浴。
2. A metal iridium concentration of 1 to 200 g / l
The water-soluble iridium plating bath according to claim 1, which is
【請求項3】 モノカルボン酸、モノカルボン酸塩、ジ
カルボン酸、ジカルボン酸塩、ヒドロキシカルボン酸、
ヒドロキシカルボン酸塩、第1アミド、尿素からなる群
より選ばれた一種以上の化合物の濃度が0.001〜
1.0mol/lである、請求項1又は2記載の水溶性
イリジウムめっき浴。
3. A monocarboxylic acid, a monocarboxylic acid salt, a dicarboxylic acid, a dicarboxylic acid salt, a hydroxycarboxylic acid,
The concentration of one or more compounds selected from the group consisting of hydroxycarboxylic acid salts, primary amides, and urea is 0.001-
The water-soluble iridium plating bath according to claim 1 or 2, which has a concentration of 1.0 mol / l.
【請求項4】 請求項1〜3のいずれかに記載のめっき
浴を使用し、pH1〜8、温度50〜98℃、電流密度
0.01〜3.0A/dm2 の操作条件でめっきする水
溶性イリジウムめっき方法。
4. Using the plating bath according to any one of claims 1 to 3, plating is performed under operating conditions of pH 1 to 8, temperature of 50 to 98 ° C. and current density of 0.01 to 3.0 A / dm 2. Water-soluble iridium plating method.
JP12467293A 1993-04-30 1993-04-30 Water-soluble iridium plating bath and plating method Expired - Lifetime JP3256912B2 (en)

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Application Number Priority Date Filing Date Title
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JPH06316786A true JPH06316786A (en) 1994-11-15
JP3256912B2 JP3256912B2 (en) 2002-02-18

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JP2007039778A (en) * 2005-08-05 2007-02-15 Nisshin Kasei Kk Iridium plating solution and iridium plating method
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JP2008088519A (en) * 2006-10-03 2008-04-17 Nisshin Kasei Kk Solution for plating iridium-cobalt alloy
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CN101892498B (en) * 2010-06-24 2011-12-07 北京航空航天大学 Method for preparing iridium layer in ionic liquid electro-deposition solution through electro-deposition
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007039778A (en) * 2005-08-05 2007-02-15 Nisshin Kasei Kk Iridium plating solution and iridium plating method
JP4751126B2 (en) * 2005-08-05 2011-08-17 日進化成株式会社 Iridium plating solution and iridium plating method
JP2008088520A (en) * 2006-10-03 2008-04-17 Nisshin Kasei Kk Plating method
JP2008088519A (en) * 2006-10-03 2008-04-17 Nisshin Kasei Kk Solution for plating iridium-cobalt alloy
JP2010248552A (en) * 2009-04-14 2010-11-04 Electroplating Eng Of Japan Co Iridium plating solution and plating method thereof
CN102400190A (en) * 2010-09-17 2012-04-04 日本电镀工程股份有限公司 Iridium plating solution and electroplate method thereof
CN104195604A (en) * 2014-09-17 2014-12-10 朱忠良 Iridium plating solution for inhibiting crack generation and plating method thereof, and coated substance
CN105506685A (en) * 2016-01-25 2016-04-20 东莞联桥电子有限公司 Novel rhodanizing process for PCBs

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