JPH0629821B2 - Multi-function differential pressure sensor - Google Patents
Multi-function differential pressure sensorInfo
- Publication number
- JPH0629821B2 JPH0629821B2 JP58169198A JP16919883A JPH0629821B2 JP H0629821 B2 JPH0629821 B2 JP H0629821B2 JP 58169198 A JP58169198 A JP 58169198A JP 16919883 A JP16919883 A JP 16919883A JP H0629821 B2 JPH0629821 B2 JP H0629821B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- chamber
- thin portion
- pressure chamber
- housing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0092—Pressure sensor associated with other sensors, e.g. for measuring acceleration or temperature
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L13/00—Devices or apparatus for measuring differences of two or more fluid pressure values
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は複合機能形差圧センサに係り、特に静圧影響が
ない温度補正された差圧信号を得るのに好適な複合機能
形差圧センサに関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multi-function differential pressure sensor, and more particularly to a multi-function differential pressure sensor suitable for obtaining a temperature-compensated differential pressure signal that is not affected by static pressure. It is about.
差圧と温度とを検出するようにした差圧センサには多く
の例が見られる。第１図は現在用いられている差圧伝送
器の原理構造の一例を示す縦断面図である。筐体２には
内部に部屋が形成され、出力信号を外部に取りだすため
のリード線群４を設けた耐圧気密端子が取り付けられて
いる。筐体の対称な位置には連通孔が形成され、この連
通孔を覆うように対称的にシールダイアフラム６，６′
が設けられている。この分野では周知のように、連通孔
を遮断するようにしてシリコン基板１がシリコンに近い
熱膨張係数を持つ、例えばパイレックスガラスなどの固
定板を介してステンレスである筐体本体に溶着される。
室５，５′には封入液が封入され、それぞれ低圧側の静
圧Ｐ及び高圧側の静圧Ｐ＋ΔＰが印加され、シリコン基
板１に圧力を伝達する。なお、室５，５′をそれぞれ低
圧室、高圧室と呼ぶ。There are many examples of differential pressure sensors that detect differential pressure and temperature. FIG. 1 is a vertical sectional view showing an example of the principle structure of a differential pressure transmitter currently used. A chamber is formed inside the housing 2, and a pressure-proof airtight terminal provided with a lead wire group 4 for taking out an output signal to the outside is attached. A communication hole is formed at a symmetrical position of the housing, and the sealing diaphragms 6, 6'are symmetrically covered so as to cover the communication hole.
Is provided. As is well known in this field, the silicon substrate 1 is welded to a casing body made of stainless steel through a fixing plate such as Pyrex glass having a thermal expansion coefficient close to that of silicon so as to block the communication hole.
A filling liquid is filled in the chambers 5 and 5 ', and a static pressure P on the low pressure side and a static pressure P + ΔP on the high pressure side are applied to the chambers 5 and 5', and the pressure is transmitted to the silicon substrate 1. The chambers 5 and 5'are referred to as a low pressure chamber and a high pressure chamber, respectively.
シリコン基板１の薄肉部１１上には差圧ΔＰに感応する
半導体ゲージ抵抗群１１１が、また、固定厚肉部１２に
は温度に感応する半導体ゲージ抵抗１２１がそれぞれ拡
散法で形成してある。これらのゲージ抵抗は高い静圧Ｐ
には不感応に作られており、それぞれ筐体２に設けた耐
圧気密端子３からリード線群４を介して外部回路に接続
してある。したがって、半導体ゲージ抵抗群１１１から
差圧ΔＰ、また、半導体ゲージ抵抗１２１から温度Ｔに
比例する信号を得て、外部回路からは温度補償された差
圧信号を得ることができる。A semiconductor gauge resistor group 111 sensitive to the differential pressure ΔP is formed on the thin portion 11 of the silicon substrate 1, and a semiconductor gauge resistor 121 sensitive to the temperature is formed on the fixed thick portion 12 by a diffusion method. These gauge resistances have high static pressure P
Are made insensitive, and are connected to an external circuit from the pressure-proof airtight terminals 3 provided on the housing 2 via the lead wire group 4. Therefore, it is possible to obtain a differential pressure ΔP from the semiconductor gauge resistance group 111, a signal proportional to the temperature T from the semiconductor gauge resistance 121, and a temperature-compensated differential pressure signal from the external circuit.
しかし、差圧伝送器の薄肉部１１の両側に加わる静圧Ｐ
は、通常１００気圧以上と高いため、両側の低圧室５、
高圧室５′内の封入液の収縮量の不整や筐体２の変形が
シリコン基板１を変形させるので、それにともない半導
体ゲージ抵抗群１１１の抵抗値が変化する。したがっ
て、差圧による信号に静圧影響による信号が重畳され、
正確な差圧信号が得られなくなる。すなわち、静圧影響
を受け、誤差を生ずる結果となる。この静圧誤差を防止
するためには、低圧室５、高圧室５′の封入液の液量を
厳密に一致させたり、筐体２を静圧Ｐによって変形しな
いように剛性の大きいものとしなければならず、設計、
製作上の大きな制約となり、差圧伝送器の小形化、低コ
スト化の障害となっていた。However, the static pressure P applied to both sides of the thin portion 11 of the differential pressure transmitter
Is usually higher than 100 atm, so the low pressure chambers 5 on both sides are
The irregularity of the contraction amount of the enclosed liquid in the high-pressure chamber 5'and the deformation of the housing 2 deform the silicon substrate 1, so that the resistance value of the semiconductor gauge resistor group 111 changes accordingly. Therefore, the signal due to the static pressure is superimposed on the signal due to the differential pressure,
An accurate differential pressure signal cannot be obtained. That is, the static pressure influences the result, resulting in an error. In order to prevent this static pressure error, the amounts of the filled liquids in the low pressure chamber 5 and the high pressure chamber 5'must be exactly equal to each other, or the housing 2 should have a high rigidity so as not to be deformed by the static pressure P. Design,
This has become a major limitation in manufacturing, and has been an obstacle to downsizing and cost reduction of the differential pressure transmitter.
これに対し、静圧影響を補償するため、筐体外部の大気
圧を基準圧力とする相対圧形の静圧センサを設けた例が
ある。On the other hand, there is an example in which a relative pressure type static pressure sensor that uses the atmospheric pressure outside the housing as a reference pressure is provided in order to compensate for the influence of static pressure.
しかしながら、相対圧形の静圧センサでは、センサ部に
筐体外部の大気を導入するため、筐体内部のセンサ部と
外部とを接続するための導通管を設けることが必要とな
る。そのため構造が複雑となり、導通管と筐体との接続
部などに１００気圧以上の高圧が長時間加わると信頼性
が低下したり、圧力による導通管の変形がセンサ部に影
響を及ぼし測定精度が低下するなどの問題がある。However, in the relative pressure type static pressure sensor, since the atmosphere outside the housing is introduced into the sensor portion, it is necessary to provide a conducting tube for connecting the sensor portion inside the housing and the outside. Therefore, the structure becomes complicated, reliability deteriorates when a high pressure of 100 atm or more is applied to a connecting portion between the conducting tube and the housing for a long time, and deformation of the conducting tube due to pressure affects the sensor unit, resulting in measurement accuracy. There are problems such as deterioration.
本発明は上記に鑑みてなされたもので、その目的とする
ところは、通常１００気圧という高い静圧のかかる流体
の圧力の測定に使用される複合機能形差圧センサにおい
て、小形化をはかることができ、しかも静圧検出特性に
優れ、かつ、温度補償された高精度な差圧信号ばかりで
なく、静圧信号をも得ることのできるディジタル化され
た複合機能形センサを提供することにある。The present invention has been made in view of the above, and an object thereof is to miniaturize a multi-function differential pressure sensor used for measuring the pressure of a fluid to which a high static pressure of 100 atm is normally applied. It is an object of the present invention to provide a digital compound function sensor capable of obtaining a static pressure signal as well as a temperature-compensated high-precision differential pressure signal which is excellent in static pressure detection characteristics. .
本発明の１つの特徴は、内部に部屋が形成され、出力信
号を取り出すための気密端子が取り付けられた筐体、該
筐体の対称的な位置に設けられ、前記部屋と連通して筐
体に設けられた連通孔を覆うシールダイアフラム、該シ
ールダイアフラムと前記筐体との間及び前記筐体の内部
の前記部屋に封入された封入液、前記連通孔を遮断する
ようにして前記筐体に固着された基板及び該基板の一部
に設けたセンサ素子を有して、通常１００気圧のような
高静圧がかかる流体の圧力の測定に使用される複合機能
形差圧センサにおいて、 前記基板の断面を一体形のＥ形形状となし、その二つの
固定厚肉部と一つの薄肉部と筐体の一部により一つの測
定圧力室を形成して前記連通孔を介して前記ダイアフラ
ムによって密封し、前記二つの固定厚肉部の一つと他の
別の固定厚肉部と他の薄肉部と前記筐体の他の一部とで
基準圧力室を形成し、該基準圧力室は、その薄肉部の厚
さを前記測定圧力の前記薄肉部の厚さとほぼ同一に、し
かも該薄肉部の平面に前記高静圧が前記封入液を介して
作用するのに耐えるように前記測定圧力室に比較して小
さな密封室にして前記部屋に形成されるものであり、 前記基板の同一平面で前記基準圧力室の前記薄肉部の平
面に静圧センサ素子を、前記測定圧力室の前記薄肉部の
平面に差圧センサ素子を設け、かつ前記高静圧が前記封
入液を介して作用する、前記基板の平面であって、前記
平面と同一平面をなす面に温度センサ素子を設け、 前記同一平面に設置された前記３つのセンサ素子からの
アナログ信号をディジタル信号に変換するＡ−Ｄ変換器
と、該Ａ−Ｄ変換器からの出力信号を入力し、静圧と温
度の影響を取り除いた、差圧に依存した出力信号と静圧
に比例した出力信号とを演算するディジタル演算手段と
を備えた ことを特徴とする複合機能形差圧センサにある。One of features of the present invention is that a room is formed inside and a case to which an airtight terminal for taking out an output signal is attached, a case provided at a symmetrical position of the case, and a case communicating with the room is provided. A seal diaphragm covering the communication hole provided in the housing, a sealed liquid sealed in the chamber between the seal diaphragm and the housing and inside the housing, and in the housing so as to block the communication hole. A multi-function differential pressure sensor having a fixed substrate and a sensor element provided on a part of the substrate, which is used for measuring the pressure of a fluid to which a high static pressure such as 100 atmospheric pressure is normally applied. Has an integral E-shaped cross section, and one fixed pressure portion is formed by the two fixed thick portions, one thin portion and a part of the housing, and is sealed by the diaphragm through the communication hole. And one of the two fixed thick parts And another fixed thick wall portion, another thin wall portion, and another portion of the housing to form a reference pressure chamber, and the reference pressure chamber has a thickness of the thin wall portion as the measured pressure. The thickness of the thin portion is approximately the same as the thickness of the thin portion, and a sealed chamber smaller than the measurement pressure chamber is formed so as to withstand the high static pressure acting on the flat surface of the thin portion through the filled liquid. Is formed, the static pressure sensor element on the plane of the thin portion of the reference pressure chamber in the same plane of the substrate, the differential pressure sensor element is provided on the plane of the thin portion of the measurement pressure chamber, and A temperature sensor element is provided on a surface of the substrate on which a high static pressure acts via the enclosed liquid and which is coplanar with the surface, and the temperature sensor element is provided on the same plane. An AD converter for converting an analog signal into a digital signal, and the AD converter. And a digital operation means for calculating an output signal dependent on the differential pressure and an output signal proportional to the static pressure by removing the effects of the static pressure and temperature from the output signal from the device. It is a multi-function differential pressure sensor.
本発明の他の特徴は、三つの厚肉部と二つの薄肉部を有
する半導体基板と、該半導体基板を二つの外方厚肉部に
おいて両側から保持する固定板とによって一つの薄肉部
の両側に圧力室を形成し、該圧力室に封入液を封入し、
かつ該薄肉部には前記固定板に設けたそれぞれの導通孔
を介して高圧低圧の二つの圧力が作用するものであり、 該圧力室にはそれぞれ固定電極が設けられ、該薄肉部の
両側に作用する圧力の差を該薄肉部と前記固定電極との
間の静電容量の差によって検出する通常１００気圧のよ
うな高静圧がかかる流体の圧力の測定に使用される複合
機能形差圧センサにおいて、 前記基板の片側断面を一体形のＥ形形状となし、前記二
つの外方厚肉部の一つと中央厚肉部と前記一つの薄肉部
と前記固定板の一方とによって、圧力室を一方の測定圧
力室となし、 前記二つの外方厚肉部の他方と前記中央厚肉部と他の別
の薄肉部と前記一方の固定板とで基準圧力室を形成し、
該基準圧力室は、該薄肉部の平面に前記高静圧が前記封
入液を介して作用するのに耐えるように前記測定圧力室
に比較して小さな密封室に前記基板と一方の固定板との
間に形成されるものであり、 該基準圧力室に対向して、前記圧力室の他方と連通し、
ここに封入した封入液の作用を受ける、前記二つの外方
厚肉部の他方と前記基準圧力室を形成する前記薄肉部と
他方の固定板とで形成される導圧室を設け、 前記基準圧力室に別の固定電極を配設し、 これらの固定電極と前記基板とから取り出されるアナロ
グ信号と封入液温度に対応する温度信号とをディジタル
信号に変換するＡ−Ｄ変換器と、該Ａ−Ｄ変換器からの
出力信号を入力し、静圧と温度の影響を取り除いた、差
圧に依存した出力信号と静圧に比例した信号とを演算す
るディジタル演算手段とを備えた ことを特徴とする複合機能形差圧センサにある。Another feature of the present invention is that both sides of one thin portion are formed by a semiconductor substrate having three thick portions and two thin portions, and a fixing plate that holds the semiconductor substrate from both sides at the two outer thick portions. To form a pressure chamber, and fill the pressure chamber with a fill liquid,
In addition, two pressures of high pressure and low pressure act on the thin portion through the respective through holes provided in the fixed plate, and fixed electrodes are provided in the pressure chambers, respectively, and both sides of the thin portion are provided. A multi-function differential pressure used to measure the pressure of a fluid to which a high static pressure such as 100 atm is detected by detecting the difference in acting pressure by the difference in capacitance between the thin portion and the fixed electrode. In the sensor, one side cross section of the substrate is formed into an integral E shape, and the pressure chamber is formed by one of the two outer thick portions, the central thick portion, the one thin portion, and one of the fixing plates. With one of the measurement pressure chamber, the other of the two outer thick parts, the central thick part and another thin part and the one fixing plate to form a reference pressure chamber,
The reference pressure chamber is a sealing chamber that is smaller than the measurement pressure chamber so as to withstand the high static pressure acting on the flat surface of the thin portion through the filled liquid. Between the pressure chamber and the other of the pressure chambers, facing the reference pressure chamber,
A pressure guide chamber formed by the other of the two outer thick portions and the thin portion forming the reference pressure chamber and the other fixing plate, which is subjected to the action of the enclosed liquid enclosed here, is provided. Another fixed electrode is arranged in the pressure chamber, and an A-D converter for converting an analog signal taken out from the fixed electrode and the substrate and a temperature signal corresponding to the temperature of the enclosed liquid into a digital signal, and the A-D converter. The output signal from the -D converter is input, and a digital calculation means for calculating an output signal dependent on the differential pressure and a signal proportional to the static pressure, in which influences of static pressure and temperature are removed, are provided. And a multi-function differential pressure sensor.
以下本発明を第２図〜第４図に示した実施例を用いて詳
細に説明する。The present invention will be described in detail below with reference to the embodiments shown in FIGS.
第２図は本発明の複合機能形差圧センサの原理構造の一
実施例を示す縦断面図で、半導体ゲージ形差圧伝送器の
場合を示してあり、第１図について説明した対応構成に
ついては詳細な説明を省略して、説明を進める。第２図
において、１０はシリコン単結晶で作ったセンサ基板
（シリコンダイアフラム）で、センサ基板１０の固定厚
肉部１２は、筐体２に図示のように気密固定してある。
３は筐体２に設けたガラス耐圧気密端子で、センサ基板
１０に設けた後述するそれぞれのゲージ抵抗からの信号
をリード線４を通して外部へ取り出すものである。筐体
２の両側には、該筐体の対称な位置で、部屋に連通する
連通孔１５，１５′を覆うシールダイアフラム６，６′
が気密に固着してあり、センサ基板１０で２分された低
圧室５、高圧室５′内にはシリコン油などの封入液１６
が封入してある。７，７′はセンサ基板１０に差圧Δ
Ｐ，静圧Ｐを加えるための筐体２を挟むフランジであ
る。FIG. 2 is a vertical cross-sectional view showing one embodiment of the principle structure of the multi-function differential pressure sensor of the present invention, showing the case of a semiconductor gauge type differential pressure transmitter. Regarding the corresponding configuration described in FIG. Omits the detailed description and proceeds with the description. In FIG. 2, 10 is a sensor substrate (silicon diaphragm) made of silicon single crystal, and the fixed thick portion 12 of the sensor substrate 10 is airtightly fixed to the housing 2 as shown in the figure.
Reference numeral 3 denotes a glass pressure-proof airtight terminal provided on the housing 2 for taking out signals from respective gauge resistors, which will be described later, provided on the sensor substrate 10 through lead wires 4 to the outside. Sealing diaphragms 6, 6'on both sides of the housing 2 cover the communication holes 15, 15 'communicating with the room at symmetrical positions of the housing.
Is airtightly adhered, and a low pressure chamber 5 and a high pressure chamber 5'divided by the sensor substrate 10 are filled with a filling liquid 16 such as silicon oil.
Is enclosed. 7, 7'is the differential pressure Δ on the sensor substrate 10.
P is a flange sandwiching the housing 2 for applying static pressure P.
センサ基板１０の中央部は薄肉部１１としてあり、両側
の低圧室５、高圧室５′内の封入液の圧力差、すなわ
ち、差圧ΔＰに応じて変形するようにしてあり、薄肉部
１１上には、その変形を電気信号に変換する差圧検出用
半導体ゲージ抵抗群１１１を拡散により形成し、さら
に、薄膜リード端子１１１ａを蒸着してある。また、セ
ンサ基板１０の外方固定厚肉部１２の一部分を図示のよ
うに固定側から凹状に加工して薄肉部１３を形成してあ
り、薄肉部１３の上面に静圧（絶対圧）検出用半導体ゲ
ージ抵抗１３１を拡散により形成し、さらに、薄膜リー
ド端子１３１ａを蒸着してある。この場合、空間１３２
は外方固定厚肉部１２と中央厚肉部１２′と薄肉部１３
と筐体の一部とで密封され、真空または大気圧の空気が
封入されて前記低圧室に比べて小さな基準圧力室として
構成される。この中には封入液が侵入しないようにして
あるから、ゲージ抵抗１３１は、基準圧力室の基準圧力
に体する高圧室５′内の封入液の圧力（ΔＰ≪Ｐである
ため、Ｐ≒Ｐ＋ΔＰ）を測定することになる。第２図か
らわかるように、センサ基板１０の断面は全体としてＥ
形の形状をなし、薄肉部１１と薄肉部１３を同意にエッ
チングして形成するので、これらの部分の厚みはほぼ等
しい。両薄肉部の厚みを等しくすることにより、量産的
な加工が容易になり、センサを小型化でき、前述のよう
に基準圧力室１３２を小さな密封室に構成するのに役立
つ。従って、静圧検出特性に優れた静圧センサが構成さ
れる。また、センサ基板１０の外方固定厚肉部１２″の
他の一部分を図示のように外周から加工して薄肉部１４
を形成し、薄肉部１４の上面に温度検出用半導体ゲージ
抵抗１４１を拡散により形成し、更に、薄膜リード端子
１４１ａを蒸着してある。薄肉部１４としたのは、熱容
量を小さくするためと、筐体２の静圧による変形の影響
を受けないようにするためであり、しかも、空間１４２
は高圧室５′に連通させてあるから薄肉部１４が静圧
Ｐ，差圧ΔＰによる曲げ変形を生ずることがない。５′
を低圧室、５を高圧室としても同じ効果が得られる。総
称して「測定圧力室」として呼ぶ。The central portion of the sensor substrate 10 is a thin portion 11, which is deformed according to the pressure difference between the low pressure chamber 5 and the high pressure chamber 5 ′ on both sides, that is, the pressure difference ΔP. A differential pressure detecting semiconductor gauge resistance group 111 for converting the deformation into an electric signal is formed by diffusion, and a thin film lead terminal 111a is further vapor-deposited. Further, a part of the outer fixed thick portion 12 of the sensor substrate 10 is processed into a concave shape from the fixed side as shown in the figure to form a thin portion 13, and a static pressure (absolute pressure) is detected on the upper surface of the thin portion 13. A semiconductor gauge resistor 131 for use is formed by diffusion, and a thin film lead terminal 131a is further vapor-deposited. In this case, the space 132
Is an outer fixed thick wall portion 12, a central thick wall portion 12 ', and a thin wall portion 13.
And a part of the housing are sealed, and air of vacuum or atmospheric pressure is enclosed to form a reference pressure chamber smaller than the low pressure chamber. Since the filled liquid is prevented from entering the inside, the gauge resistance 131 has the pressure of the filled liquid in the high-pressure chamber 5'corresponding to the reference pressure of the reference pressure chamber (since ΔP << P, P≈P + ΔP). ) Will be measured. As can be seen from FIG. 2, the cross section of the sensor substrate 10 is E as a whole.
Since the thin-walled portion 11 and the thin-walled portion 13 are formed by etching in agreement, the thicknesses of these portions are substantially equal. By making the thicknesses of both thin portions equal, mass-production processing becomes easy, the sensor can be downsized, and it is useful for forming the reference pressure chamber 132 into a small sealed chamber as described above. Therefore, a static pressure sensor having excellent static pressure detection characteristics is constructed. Also, another portion of the outer fixed thick portion 12 ″ of the sensor substrate 10 is processed from the outer periphery as shown in the drawing to form a thin portion 14
Is formed, the temperature detecting semiconductor gauge resistor 141 is formed on the upper surface of the thin portion 14 by diffusion, and the thin film lead terminal 141a is vapor-deposited. The thin portion 14 is provided to reduce the heat capacity and to prevent the housing 2 from being affected by the deformation of the housing 2 due to the static pressure.
Is communicated with the high pressure chamber 5 ', the thin-walled portion 14 will not be bent and deformed by the static pressure P and the differential pressure ΔP. 5 '
The same effect can be obtained by using the low pressure chamber and the high pressure chamber. Collectively referred to as "measurement pressure chamber".
なお、（１００）面のシリコン単結晶板にｐ形の不純物
であるボロンを拡散してゲージ抵抗を形成する場合に
は、ピエゾ抵抗係数がほぼ零となる〈１００〉軸に沿っ
てゲージ抵抗を配列するようにすれば、わずかな変形が
伝達されたときに、それらは電気信号としてあらわれな
いようになるので、温度検出用半導体ゲージ抵抗１４１
は、このようにして形成してある。When a gauge resistance is formed by diffusing boron, which is a p-type impurity, into a silicon single crystal plate having a (100) plane, the gauge resistance is set along the <100> axis where the piezoresistance coefficient is almost zero. By arranging them, when slight deformations are transmitted, they do not appear as an electric signal, so that the semiconductor gauge resistor 141 for temperature detection is used.
Are formed in this way.
センサ基板１０は、従来同様、シリコンに近い熱膨張係
数を持つパイレックスガラスなどの固定板を介して筐体
本体に溶着される。The sensor substrate 10 is welded to the housing body via a fixing plate such as Pyrex glass having a thermal expansion coefficient similar to that of silicon as in the conventional case.
第３図は本発明の複合機能形差圧センサの検出信号処理
フローの一実施例を示す構成図である。センサ基板１０
の薄肉部１１の両側にそれぞれ圧力Ｐ，Ｐ＋ΔＰが加わ
ると、差圧検出用半導体ゲージ抵抗群１１１は差圧ΔＰ
を検出し、その信号はリード端子１１１ａ、リード線４
ａを経てＡ−Ｄ変換器２０に入力される。一方、薄肉部
１３の静圧検出用半導体ゲージ抵抗１３１は静圧Ｐを検
出し、また、薄肉部１４の温度検出用半導体ゲージ抵抗
１４１は温度Ｔを検出し、それぞれの信号は、リード端
子１３１ａ，リード線４ａおよびリード端子１４１ａ，
リード線４ｃを経てそれぞれＡ−Ｄ変換器２０に入力さ
れる。Ａ−Ｄ変換器は、これらの信号をＡ−Ｄ変換して
ＣＰＵ３０に与える。ＣＰＵ３０で所要の演算を行い、
静圧Ｐの影響を除去し、かつ、温度Ｔによる影響を補正
した差圧ΔＰに正確に比例した差圧信号を作る。４０は
ＣＰＵ３０での演算に必要なデータや演算プログラムを
記憶させてあるメモリである。上記差圧信号は表示装置
５０に表示され、また、Ｄ−Ａ変換器６０でＤ−Ａ変換
される。それらの信号は、切替装置７０を設けることに
より、差圧ΔＰのみに正確に比例した差圧信号として表
示７１されるほか、静圧Ｐや温度Ｔに比例した信号とし
て表示７２、７３、又は伝送される。FIG. 3 is a block diagram showing an embodiment of a detection signal processing flow of the multi-function differential pressure sensor of the present invention. Sensor board 10
When pressures P and P + ΔP are applied to both sides of the thin-walled portion 11, the differential pressure detecting semiconductor gauge resistor group 111 is applied to the differential pressure ΔP.
Is detected, and the signal is the lead terminal 111a and the lead wire 4
It is input to the AD converter 20 via a. On the other hand, the static pressure detecting semiconductor gauge resistor 131 of the thin portion 13 detects the static pressure P, and the temperature detecting semiconductor gauge resistor 141 of the thin portion 14 detects the temperature T. Each signal is a lead terminal 131a. , Lead wire 4a and lead terminal 141a,
It is input to the AD converter 20 via the lead wires 4c. The A-D converter A-D converts these signals and gives them to the CPU 30. CPU30 performs the required calculation,
The effect of static pressure P is eliminated and the effect of temperature T is corrected to create a differential pressure signal that is exactly proportional to differential pressure ΔP. Reference numeral 40 is a memory in which data and calculation programs necessary for calculation in the CPU 30 are stored. The differential pressure signal is displayed on the display device 50 and is D / A converted by the D / A converter 60. By providing the switching device 70, these signals are displayed 71 as a differential pressure signal that is exactly proportional to only the differential pressure ΔP, and also displayed as signals proportional to the static pressure P and the temperature T 72, 73, or transmitted. To be done.
上記した本発明の実施例は、次のような効果を有する。The above-described embodiment of the present invention has the following effects.
（１）固定厚肉部１２と他の固定厚肉部１２′と薄肉部
１３と筐体２の一部とで基準圧力室１３２を形成し、該
基準圧力室は、その薄肉部１３の厚さを測定圧力室、例
えば低圧室５の薄肉部１１の厚さとほぼ同一に、しかも
該薄肉部の平面に通常１００気圧というような高静圧が
封入液１６を介して作用するのに耐えるように前記測定
圧力室に比較して小さな密封室に形成するものであるか
ら、相対圧形の静圧センサのようにセンサ部と筐体外部
とをつなぐ導通管などを設ける必要がなく、構造が簡単
で、前述した高静圧にも耐えて信頼性が高く、静圧検出
特性に優れた静圧センサを構成できる。(1) The fixed thick wall portion 12, the other fixed thick wall portion 12 ′, the thin wall portion 13 and a part of the housing 2 form a reference pressure chamber 132, and the reference pressure chamber has the thickness of the thin wall portion 13. The thickness is approximately the same as the thickness of the thin-walled portion 11 of the measurement pressure chamber, for example, the low-pressure chamber 5, and yet a high static pressure of 100 atm is usually applied to the plane of the thin-walled portion through the filled liquid 16. Since it is formed in a sealed chamber that is smaller than the measurement pressure chamber, it is not necessary to provide a conducting pipe or the like that connects the sensor unit and the outside of the housing like a relative pressure type static pressure sensor, and the structure is It is possible to construct a static pressure sensor that is simple, has high reliability withstanding the above-mentioned high static pressure, and has excellent static pressure detection characteristics.
（２）上記のように静圧検出特性に優れた静圧センサを
用いるため、１００気圧以上という高圧においても筐体
２の静圧Ｐによる変形などに起因する静圧影響が補正さ
れた差圧ΔＰに比例した出力を得ることができる。(2) Since the static pressure sensor having excellent static pressure detection characteristics is used as described above, the differential pressure in which the influence of static pressure caused by deformation of the housing 2 due to the static pressure P is corrected even at a high pressure of 100 atmospheric pressure or more. An output proportional to ΔP can be obtained.
（３）周囲温度Ｔが変化すると、差圧ΔＰや静圧Ｐを検
出するゲージ抵抗１１１や１３１の特性が変化するが、
温度検出用半導体ゲージ抵抗１４１の出力を用いて温度
補償できるので、温度影響のない差圧ΔＰに正確に比例
した出力のほか、静圧Ｐに正確に比例した出力をも得る
ことができる。(3) When the ambient temperature T changes, the characteristics of the gauge resistors 111 and 131 that detect the differential pressure ΔP and the static pressure P change.
Since temperature compensation can be performed by using the output of the semiconductor gauge resistor 141 for temperature detection, not only an output that is accurately proportional to the differential pressure ΔP without temperature influence but also an output that is accurately proportional to the static pressure P can be obtained.
（４）各半導体ゲージ抵抗１１１、１３１、１４１は同
一半導体プロセスによって形成でき、また、センサ基板
１０の薄肉加工は、半導体微細加工技術を用いれば一度
に容易に行うことができ、かつ、センサの小形化が可能
であり、基準圧力室１３２を低圧室５に比べて小さな密
封室に構成するのに有効である。(4) The semiconductor gauge resistors 111, 131, 141 can be formed by the same semiconductor process, and the thin processing of the sensor substrate 10 can be easily performed at one time by using the semiconductor fine processing technology, and the sensor The size can be reduced, and it is effective to form the reference pressure chamber 132 into a sealed chamber smaller than the low pressure chamber 5.
第４図は本発明の他の実施例を示し、第２図に示す実施
例に対応した要部を断面図として示す。第２図において
は、差圧ΔＰ、静圧Ｐ、温度Ｔを検出するのに半導体ゲ
ージ抵抗を用いるようにしてあるが、第４図において
は、これらを静電容量センサに代えてある。第４図にお
いて、１００はシリコン単結晶などの弾性体よりなり、
外方厚肉部１１２、１１２″、中央厚肉部１１２′と薄
肉部１００１、１００２とを形成したセンサ基板、１０
１、１０２は筐体の一部をなし、センサ基板１００を挾
持するシリコンの熱膨張係数に近い熱膨張係数のパイレ
ックスガラスよりなる固定板であり、固定板１０１、１
０２には、それぞれセンサ基板１００の差圧検出用薄肉
部１００１の両側に対向する位置に薄膜蒸着の固定電極
１０１１、１０２１とこれらからのリード線１０１２、
１０２２とが埋め込んである。薄肉部１００１と固定電
極１０１１および１０２１との間に形成した圧力室１０
１５、１０２５には封入液１０１６を封入し、固定板１
０１、１０２にそれぞれ設けた導圧口１０１３、１０２
３より導通孔１０１４、１０１４′を通じて圧力Ｐ，Ｐ
＋ΔＰを導いてある。なお、圧力室１０１５と１０２５
の断面形状は薄肉部１００１に関して対称であるため、
どちらが、高圧室あるは低圧室でもよく、両者を総称し
て「測定圧力室」と呼ぶ。また、センサ基板１００の右
側には静圧（絶対圧）検出用薄肉部１００２が形成てあ
り、第４図からわかるようにセンサ基板１００の断面の
下側はＥ形形状をなしている。薄肉部１００２の片側に
設けた導圧室１０３はその左側で圧力室１０１５と連通
しているため、薄肉部１００２には導圧口１０１３より
導入された圧力が封入液１０１６を介してかかる。他方
の片側は２つの厚肉部１１２、１１２′と静圧検出用の
薄肉部１００２と固定板１０２で囲まれた基準圧力室１
０４とし、ここを真空（または大気圧）の密封室として
ある。第２図に示す第１の実施例と同様に基準圧力室１
０４は圧力室１０２５に比べて小さく形成されている。
基準圧力室１０４の中には固定板１０２の薄肉部１００
２に対向する部分に薄膜蒸着の固定電極１０２４とこれ
からのリード線１０３２とが埋め込んである。１００３
はセンサ基板１００に接続したリード線である。したが
って、リード線１００３と１０１２および１０２２との
間では差圧ΔＰに応動して静電容量変化が起こり、リー
ド線１００３と１０３２との間では静圧Ｐに応動して静
電容量変化が起こる。また、電極１０１１および１０２
１と薄肉部１００１との間に封入された封入液１０１６
の誘電率が温度によって変化するので、これを利用して
封入液温度に対応する温度信号を得ることができる。FIG. 4 shows another embodiment of the present invention, and shows a main part corresponding to the embodiment shown in FIG. 2 as a sectional view. In FIG. 2, a semiconductor gauge resistor is used to detect the differential pressure ΔP, the static pressure P, and the temperature T, but in FIG. 4, these are replaced with capacitance sensors. In FIG. 4, 100 is an elastic body such as silicon single crystal,
A sensor substrate having an outer thick portion 112, 112 ″, a central thick portion 112 ′, and thin portions 1001, 1002.
Reference numerals 1 and 102 denote fixing plates 101, 1 that form a part of the housing and are made of Pyrex glass having a coefficient of thermal expansion close to that of silicon that holds the sensor substrate 100.
02, fixed electrodes 1011 and 1021 for thin film deposition and lead wires 1012 from these electrodes are provided at positions facing both sides of the differential pressure detecting thin portion 1001 of the sensor substrate 100, respectively.
1022 is embedded. Pressure chamber 10 formed between thin portion 1001 and fixed electrodes 1011 and 1021
15 and 1025 are filled with a filling liquid 1016, and the fixing plate 1
01, 102 pressure guide ports 1013, 102 respectively provided
3 through the through holes 1014, 1014 ', pressure P, P
It leads to + ΔP. The pressure chambers 1015 and 1025
Since the cross-sectional shape of is symmetric with respect to the thin portion 1001,
Either of them may be a high pressure chamber or a low pressure chamber, and both are collectively referred to as a "measurement pressure chamber". Further, a thin portion 1002 for detecting static pressure (absolute pressure) is formed on the right side of the sensor substrate 100, and as shown in FIG. 4, the lower side of the cross section of the sensor substrate 100 has an E shape. Since the pressure guiding chamber 103 provided on one side of the thin portion 1002 communicates with the pressure chamber 1015 on the left side, the pressure introduced from the pressure guiding port 1013 is applied to the thin portion 1002 via the enclosed liquid 1016. The other side is a reference pressure chamber 1 surrounded by two thick-walled portions 112, 112 ', a thin-walled portion 1002 for static pressure detection, and a fixed plate 102.
04, which is a vacuum (or atmospheric pressure) sealed chamber. Similar to the first embodiment shown in FIG. 2, the reference pressure chamber 1
04 is formed smaller than the pressure chamber 1025.
In the reference pressure chamber 104, the thin portion 100 of the fixed plate 102 is provided.
A fixed electrode 1024 for thin film deposition and a lead wire 1032 to be formed in the future are embedded in a portion opposed to 2. 1003
Is a lead wire connected to the sensor substrate 100. Therefore, a capacitance change occurs between the lead wires 1003 and 1012 and 1022 in response to the pressure difference ΔP, and a capacitance change occurs between the lead wires 1003 and 1032 in response to the static pressure P. Also, the electrodes 1011 and 102
1 and a thin liquid 1001 enclosed liquid 1016
Since the permittivity of is changed with temperature, this can be used to obtain a temperature signal corresponding to the temperature of the filled liquid.
本実施例によれば、静圧センサを静電容量方式の絶対圧
形としたため、第２図の半導体ゲージ抵抗を用いた圧力
検出方式の場合と同様、センサ部と筐体外部とをつなぐ
導通管などを設ける必要がなく、構造が簡単で、１００
気圧以上という高圧においても信頼性および静圧検出特
性に優れた静圧センサを構成できる効果がある。また、
第２図の場合と同様、センサ基板１００の薄肉加工は、
半導体微細加工技術を用いれば容易に行うことができ、
かつ、差圧検出装置の小形化が可能であり、基準圧力室
１０４を圧力室１０２５に比べて小さな密封室に構成す
るのに有効である。According to the present embodiment, since the static pressure sensor is the capacitance type absolute pressure type, as in the case of the pressure detection system using the semiconductor gauge resistance of FIG. 2, there is continuity between the sensor unit and the outside of the housing. No need to install pipes, simple structure, 100
There is an effect that a static pressure sensor having excellent reliability and static pressure detection characteristics can be configured even at a high pressure of atmospheric pressure or more. Also,
As in the case of FIG. 2, thinning the sensor substrate 100
This can be easily done using semiconductor microfabrication technology,
In addition, the differential pressure detecting device can be downsized, and it is effective to configure the reference pressure chamber 104 as a sealed chamber smaller than the pressure chamber 1025.
以上説明したように、本発明によれば、構造が簡単で、
基準圧力室を測定圧力室に比較して小さな、かつ密封室
にしたことによって信頼性及び静圧検出特性に優れた静
圧センサを用いて、差圧センサの静圧影響を補償でき、
１００気圧以上という高圧においても静圧影響がなく、
かつ、温度補償された高精度な差圧信号及び静圧信号を
も得ることのできるディジタル化された複合機能形セン
サを提供することができる。As described above, according to the present invention, the structure is simple,
By using a static pressure sensor that is smaller than the measurement pressure chamber and has a sealed chamber that is smaller than the measurement pressure chamber, the static pressure sensor with excellent reliability and static pressure detection characteristics can be used to compensate for the static pressure effect of the differential pressure sensor.
There is no static pressure effect even at high pressure of 100 atm or more,
Further, it is possible to provide a digitized compound function sensor capable of obtaining a highly accurate temperature-compensated differential pressure signal and static pressure signal.
第１図は従来の差圧伝送器の原理構造の一例を示す縦断
面図、第２図は、本発明の複合機能形差圧センサの原理
構造の一実施例を示す縦断面図、第３図は本発明の複合
機能形差圧センサの検出信号処理フローの一実施例を示
す構成図、第４図は本発明の他の実施例を示し、第２図
に示す実施例の要部断面図である。 ２……筐体、５……低圧室、５′……高圧室、６，６′
……シールダイアフラム、７，７′……フランジ、１０
……センサ基板、１１，１３，１４……薄肉部、１２…
…固定厚肉部、１１１……差圧検出用半導体ゲージ抵抗
群、１３１……静圧検出用半導体ゲージ、１４１……温
度検出用半導体ゲージ抵抗、２０……Ａ−Ｄ変換器、３
０……ＣＰＵ、７０……切換装置、７１……差圧ΔＰに
比例した差圧信号表示、７２……静圧Ｐに比例した信号
表示、７３……温度Ｔに比例した信号表示。FIG. 1 is a vertical sectional view showing an example of the principle structure of a conventional differential pressure transmitter, and FIG. 2 is a vertical sectional view showing an example of the principle structure of a multi-function differential pressure sensor of the present invention. FIG. 4 is a block diagram showing an embodiment of a detection signal processing flow of the multi-function differential pressure sensor of the present invention, FIG. 4 shows another embodiment of the present invention, and a cross section of the essential part of the embodiment shown in FIG. It is a figure. 2 ... Casing, 5 ... Low-pressure chamber, 5 '... High-pressure chamber, 6, 6'
... Seal diaphragm, 7,7 '... Flange, 10
...... Sensor substrate, 11, 13, 14 ...... Thin-walled part, 12 ...
... fixed thick portion, 111 ... differential pressure detection semiconductor gauge resistance group, 131 ... static pressure detection semiconductor gauge, 141 ... temperature detection semiconductor gauge resistance, 20 ... A-D converter, 3
0 ... CPU, 70 ... Switching device, 71 ... Differential pressure signal display proportional to differential pressure ΔP, 72 ... Signal display proportional to static pressure P, 73 ... Signal display proportional to temperature T.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 川上 寛治 茨城県日立市幸町３丁目１番１号 株式会 社日立製作所日立研究所内 (72)発明者 高橋 幸夫 茨城県勝田市市毛882番地 株式会社日立 製作所那珂工場内 (56)参考文献 特開 昭56−137238（ＪＰ，Ａ) 特開 昭56−40735（ＪＰ，Ａ) 特開 昭57−91431（ＪＰ，Ａ) 特開 昭53−58279（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kanji Kawakami 3-1-1, Saiwaicho, Hitachi-shi, Ibaraki Hitachi Ltd. Hitachi Research Laboratory (72) Inventor Yukio Takahashi 882, Ichige Ichika, Katsuta-shi, Ibaraki Stock Hitachi, Ltd. Naka factory (56) Reference JP-A-56-137238 (JP, A) JP-A-56-40735 (JP, A) JP-A-57-91431 (JP, A) JP-A-53-58279 (JP, A)
Claims (3)
すための気密端子が取り付けられた筐体、該筐体の対称
的な位置に設けられ、前記部屋と連通して筐体に設けら
れた連通孔を覆うシールダイアフラム、該シールダイア
フラムと前記筐体との間及び前記筐体の内部の前記部屋
に封入された封入液、前記連通孔を遮断するようにして
前記筐体に固着された基板及び該基板の一部に設けたセ
ンサ素子を有して、通常１００気圧のような高静圧がか
かる流体の圧力の測定に使用される複合機能形差圧セン
サにおいて、 前記基板の断面を一体形のＥ形形状となし、その二つの
固定厚肉部と一つの薄肉部と筐体の一部により一つの測
定圧力室を形成して前記連通孔を介して前記ダイアフラ
ムによって密封し、前記二つの固定厚肉部の一つと他の
別の固定厚肉部と他の薄肉部と前記筐体の他の一部とで
基準圧力室を形成し、該基準圧力室は、その薄肉部の厚
さを前記測定圧力の前記薄肉部の厚さとほぼ同一に、し
かも該薄肉部の平面に前記高静圧が前記封入液を介して
作用するのに耐えるように前記測定圧力室に比較して小
さな密封室にして前記部屋に形成されるものであり、 前記基板の同一平面で前記基準圧力室の前記薄肉部の平
面に静圧センサ素子を、前記測定圧力室の前記薄肉部の
平面に差圧センサ素子を設け、かつ前記高静圧が前記封
入液を介して作用する、前記基板の平面であって、前記
平面と同一平面をなす面に温度センサ素子を設け、 前記同一平面に設置された前記３つのセンサ素子からの
アナログ信号をディジタル信号に変換するＡ−Ｄ変換器
と、該Ａ−Ｄ変換器からの出力信号を入力し、静圧と温
度の影響を取り除いた、差圧に依存した出力信号と静圧
に比例した出力信号とを演算するディジタル演算手段と
を備えた ことを特徴とする複合機能形差圧センサ。1. A housing having a room formed therein, to which an airtight terminal for extracting an output signal is attached, provided at a symmetrical position of the housing, and provided in the housing in communication with the room. A sealing diaphragm covering the communication hole, a sealed liquid sealed between the seal diaphragm and the housing and in the chamber inside the housing, and fixed to the housing so as to block the communication hole. A multi-function differential pressure sensor, which has a substrate and a sensor element provided on a part of the substrate and is used for measuring the pressure of a fluid to which a high static pressure such as 100 atm is usually applied, An integral E-shape, one fixed pressure portion is formed by the two fixed thick portions, one thin portion and a part of the housing, and the measurement pressure chamber is sealed by the diaphragm through the communication hole, One of the two fixed thick parts and another of the other A fixed thick portion, another thin portion, and another part of the casing form a reference pressure chamber, and the reference pressure chamber has a thickness of the thin portion and a thickness of the thin portion of the measurement pressure. Almost the same, and in order to withstand the high static pressure acting on the flat surface of the thin portion through the filled liquid, a sealed chamber smaller than the measurement pressure chamber is formed in the chamber. There is a static pressure sensor element on the flat surface of the thin portion of the reference pressure chamber on the same plane of the substrate, a differential pressure sensor element is provided on the flat surface of the thin portion of the measurement pressure chamber, and the high static pressure is A temperature sensor element is provided on the plane of the substrate that acts through the filled liquid and is flush with the plane, and analog signals from the three sensor elements placed on the same plane are converted into digital signals. From the A-D converter and the A-D converter A multi-function type characterized by including a digital operation means for inputting a force signal and removing an effect of static pressure and temperature, and calculating an output signal dependent on the differential pressure and an output signal proportional to the static pressure. Differential pressure sensor.
形差圧センサにおいて、 前記ディジタル演算手段は、温度に比例した出力信号を
も演算する ことを特徴とする複合機能形差圧センサ。2. A multi-function differential pressure sensor according to claim 1, wherein the digital computing means also computes an output signal proportional to temperature. .
体基板と、該半導体基板を二つの外方厚肉部において両
側から保持する固定板とによって一つの薄肉部の両側に
圧力室を形成し、該圧力室に封入液を封入し、かつ該薄
肉部には前記固定板に設けたそれぞれの導通孔を介して
高圧低圧の二つの圧力が作用するものであり、 該圧力室にはそれぞれ固定電極が設けられ、該薄肉部の
両側に作用する圧力の差を該薄肉部と前記固定電極との
間の静電容量の差によって検出する通常１００気圧のよ
うな高静圧がかかる流体の圧力の測定に使用される複合
機能形差圧センサにおいて、 前記基板の片側断面を一体形のＥ形形状となし、前記二
つの外方厚肉部の一つと中央厚肉部と前記一つの薄肉部
と前記固定板の一方とによって、圧力室を一方の測定圧
力室となし、 前記二つの外方厚肉部の他方と前記中央厚肉部と他の別
の薄肉部と前記一方の固定板とで基準圧力室を形成し、
該基準圧力室は、該薄肉部の平面に前記高静圧が前記封
入液を介して作用するのに耐えるように前記測定圧力室
に比較して小さな密封室に前記基板と一方の固定板との
間に形成されるものであり、 該基準圧力室に対向して、前記圧力室の他方と連通し、
ここに封入した封入液の作用を受ける、前記二つの外方
厚肉部の他方と前記基準圧力室を形成する前記薄肉部と
他方の固定板とで形成される導圧室を設け、 前記基準圧力室に別の固定電極を配設し、 これらの固定電極と前記基板とから取り出されるアナロ
グ信号と封入液温度に対応する温度信号とをディジタル
信号に変換するＡ−Ｄ変換器と、該Ａ−Ｄ変換器からの
出力信号を入力し、静圧と温度の影響を取り除いた、差
圧に依存した出力信号と静圧に比例した信号とを演算す
るディジタル演算手段とを備えた ことを特徴とする複合機能形差圧センサ。3. Pressure chambers on both sides of one thin portion by means of a semiconductor substrate having three thick portions and two thin portions, and a fixing plate for holding the semiconductor substrate from both sides at the two outer thick portions. Is formed, and an enclosed liquid is enclosed in the pressure chamber, and two pressures of high pressure and low pressure act on the thin portion through the respective through holes provided in the fixing plate. Are provided with fixed electrodes, respectively, and a high static pressure such as 100 atm is usually applied to detect a difference in pressure acting on both sides of the thin portion by a difference in capacitance between the thin portion and the fixed electrode. In a multi-function differential pressure sensor used for measuring fluid pressure, one side cross-section of the substrate is formed into an integral E-shape, and one of the two outer thick parts, a central thick part and the one One thin chamber and one of the fixing plates The pressure chamber and without, to form a reference pressure chamber between the two other with the central thick portion of the outer thick portion and another separate thin portion and said one of the fixed plate,
The reference pressure chamber is a sealing chamber that is smaller than the measurement pressure chamber so as to withstand the high static pressure acting on the flat surface of the thin portion through the filled liquid. Between the pressure chamber and the other of the pressure chambers, facing the reference pressure chamber,
A pressure guide chamber formed by the other of the two outer thick portions and the thin portion forming the reference pressure chamber and the other fixing plate, which is subjected to the action of the enclosed liquid enclosed here, is provided. Another fixed electrode is arranged in the pressure chamber, and an A-D converter for converting an analog signal taken out from the fixed electrode and the substrate and a temperature signal corresponding to the temperature of the enclosed liquid into a digital signal, and the A-D converter. The output signal from the -D converter is input, and a digital calculation means for calculating an output signal dependent on the differential pressure and a signal proportional to the static pressure, in which influences of static pressure and temperature are removed, are provided. Multi-function differential pressure sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58169198A JPH0629821B2 (en) | 1983-09-16 | 1983-09-16 | Multi-function differential pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58169198A JPH0629821B2 (en) | 1983-09-16 | 1983-09-16 | Multi-function differential pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6061637A JPS6061637A (en) | 1985-04-09 |
| JPH0629821B2 true JPH0629821B2 (en) | 1994-04-20 |
Family
ID=15882024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58169198A Expired - Lifetime JPH0629821B2 (en) | 1983-09-16 | 1983-09-16 | Multi-function differential pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0629821B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008542717A (en) * | 2005-05-26 | 2008-11-27 | ローズマウント インコーポレイテッド | Pressure sensor using a compressible sensor body |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01141328A (en) * | 1987-11-27 | 1989-06-02 | Hitachi Ltd | Differential pressure transmitter |
| EP0331772A1 (en) * | 1988-03-08 | 1989-09-13 | Dräger Nederland B.V. | Differential pressure meter for bidirectional flows of gas |
| JPH027539U (en) * | 1988-06-29 | 1990-01-18 | ||
| JPH0288921A (en) * | 1988-09-27 | 1990-03-29 | Yamatake Honeywell Co Ltd | Pressure correcting type differential pressure transmitter |
| JP2689744B2 (en) * | 1990-03-19 | 1997-12-10 | 株式会社日立製作所 | Compound sensor, compound transmitter and plant system using the same |
| KR100411476B1 (en) * | 2001-09-24 | 2003-12-18 | 주식회사코닉스 | Method for manufacturing capacitance type vacuum sensor and vacuum detecting device by using the same |
| JP2003315193A (en) * | 2002-04-24 | 2003-11-06 | Denso Corp | Pressure sensor |
| US7047811B2 (en) * | 2003-02-18 | 2006-05-23 | Ashcroft Inc. | Pressure measurement |
| JP2005291946A (en) * | 2004-03-31 | 2005-10-20 | Masaki Esashi | Optical fiber sensor |
| US7267011B2 (en) * | 2005-10-03 | 2007-09-11 | Delphi Technologies, Inc. | Device for invasively measuring fluid pressure |
| JP5965165B2 (en) * | 2012-03-14 | 2016-08-03 | アズビル株式会社 | Differential pressure transmitter |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5640735A (en) * | 1979-09-10 | 1981-04-17 | Toshiba Corp | Transmitter for differential pressure |
| JPS56137238A (en) * | 1980-03-31 | 1981-10-27 | Toshiba Corp | Differential pressure transmitter |
-
1983
- 1983-09-16 JP JP58169198A patent/JPH0629821B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008542717A (en) * | 2005-05-26 | 2008-11-27 | ローズマウント インコーポレイテッド | Pressure sensor using a compressible sensor body |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6061637A (en) | 1985-04-09 |
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