JPH06283270A - Organic light resonator element made in high vacuum - Google Patents
Organic light resonator element made in high vacuumInfo
- Publication number
- JPH06283270A JPH06283270A JP5067865A JP6786593A JPH06283270A JP H06283270 A JPH06283270 A JP H06283270A JP 5067865 A JP5067865 A JP 5067865A JP 6786593 A JP6786593 A JP 6786593A JP H06283270 A JPH06283270 A JP H06283270A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light
- film
- layer
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims description 10
- 238000005401 electroluminescence Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 19
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 239000002184 metal Substances 0.000 abstract description 10
- 239000011521 glass Substances 0.000 abstract description 5
- 238000002347 injection Methods 0.000 abstract description 5
- 239000007924 injection Substances 0.000 abstract description 5
- 239000013522 chelant Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 150000004985 diamines Chemical class 0.000 abstract description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009499 grossing Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 230000026683 transduction Effects 0.000 abstract 1
- 238000010361 transduction Methods 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 4
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical class C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
Landscapes
- Optical Filters (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、電気−光変換を実現
し、情報通信分野において、表示素子，通信用発光デバ
イス，情報ファイル用読／書ヘッド，印刷装置などに利
用される。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention realizes electro-optical conversion and is used in the field of information and communication such as a display device, a light emitting device for communication, a read / write head for information files, and a printer.
【０００２】[0002]
【従来の技術】従来の有機電界発光素子の蒸着による製
造において、蒸着時の圧力は、一般的には１０-7torrよ
り高く共振器構造を十分実現するには至っていなかっ
た。即ち、有機光共振器素子の特性と蒸着時に用いる圧
力の関係について詳細な検討はなされていなかった。2. Description of the Related Art In the conventional production of organic electroluminescent devices by vapor deposition, the pressure during vapor deposition is generally higher than 10 -7 torr, and a resonator structure has not been sufficiently realized. That is, no detailed study has been made on the relationship between the characteristics of the organic optical resonator element and the pressure used during vapor deposition.
【０００３】[0003]
【発明が解決しようとする課題】本発明は、有機電界発
光素子の共振器効果による発光特性の改善を図るもの
で、特に共振器構造を達成するに要する製造工程を改良
した素子にある。DISCLOSURE OF THE INVENTION The present invention is intended to improve the light emission characteristics of an organic electroluminescent device due to the resonator effect, and more particularly to a device having an improved manufacturing process required to achieve a resonator structure.
【０００４】[0004]
【課題を解決するための手段】前記課題を解決する本発
明の要旨は次の通りである。The gist of the present invention for solving the above problems is as follows.
【０００５】透明基体上に半透明反射層を有し、該半透
明反射層上に透明導電層が配置され、該半透明導電層上
に有機薄膜の発光層が設けられ、その上に電極を備えた
有機電界発光素子であって、前記半透明反射層は素子層
での発光の一部を透明基体側に透過し、発光の１部を発
光層側に反射する機能を有し、該半透明反射層と発光層
の背面の電極との間が光共振器として作用するよう構成
されていることを特徴とする有機電界発光素子におい
て、有機薄膜の形成時に、１０-8torrよりガス圧の低い
雰囲気を用いる素子。A semi-transparent reflective layer is provided on a transparent substrate, a transparent conductive layer is disposed on the semi-transparent reflective layer, an organic thin film light emitting layer is provided on the semi-transparent conductive layer, and an electrode is provided thereon. In the organic electroluminescent device, the semitransparent reflective layer has a function of transmitting a part of light emitted from the device layer to the transparent substrate side and reflecting a part of the emitted light to the light emitting layer side. In an organic electroluminescent device, characterized in that the transparent reflective layer and the electrode on the back surface of the light emitting layer are configured to act as an optical resonator, an organic thin film having a gas pressure of more than 10 -8 torr is formed when the organic thin film is formed. Devices that use a low atmosphere.
【０００６】前記半透明反射層と背面の電極との間の光
学的距離が、取り出す光のピーク波長の０.９〜１.１倍
の長さまたはその整数倍の長さである前記有機電界発光
素子。The organic electric field having an optical distance between the semitransparent reflective layer and the back electrode is 0.9 to 1.1 times the peak wavelength of the extracted light or an integral multiple thereof. Light emitting element.
【０００７】前記半透明反射鏡が誘電体を積層した多層
膜である前記有機電界発光素子。The organic electroluminescent device, wherein the semitransparent reflecting mirror is a multilayer film in which dielectrics are laminated.
【０００８】前記透明導電層，ホール注入層，発光層及
び電子注入層の各層の厚さと屈折率との積の光学的距離
の和が発光のピーク波長と同じかもしくは近似している
前記有機電界発光素子。The organic electric field in which the sum of the optical distances of the products of the thickness of each of the transparent conductive layer, the hole injection layer, the light emitting layer and the electron injection layer and the refractive index is the same as or close to the peak wavelength of light emission. Light emitting element.
【０００９】前記半透明反射層がパターニングにより発
光取り出し窓を有する金属製全反射膜である前記有機電
界発光素子。The organic electroluminescent device, wherein the semitransparent reflection layer is a metallic total reflection film having a light emission window through patterning.
【００１０】前記半透明反射層が、反射率５０〜９９.
９％または透過率が５０〜０.１％である前記有機電界
発光素子。The semitransparent reflective layer has a reflectance of 50 to 99.
The organic electroluminescent device as set forth above, which has a transmittance of 9% or 50 to 0.1%.
【００１１】なお、前記透明基体としては、透明な石
英，ガラスまたはプラスチックから選ばれる透明基板が
望ましい。The transparent substrate is preferably a transparent substrate selected from transparent quartz, glass or plastic.
【００１２】本発明においては、透明電極と基板との間
に半透明反射膜を設置し、該反射膜と背面電極との間の
光学的距離を発光波長のそれと同じか、またはその整数
倍としたことにより、素子内部を光の微小共振器とする
ことができる。それによって、発光スペクトルの半値幅
が縮小される。In the present invention, a semitransparent reflective film is provided between the transparent electrode and the substrate, and the optical distance between the reflective film and the back electrode is equal to that of the emission wavelength or an integral multiple thereof. As a result, the inside of the device can be made into a micro resonator of light. Thereby, the full width at half maximum of the emission spectrum is reduced.
【００１３】また、発光効率が向上し、可干渉光が発生
するなど、発光特性を向上できる。Further, the luminous efficiency is improved and the coherent light is generated, so that the luminous characteristics can be improved.
【００１４】[0014]
【作用】蒸着時に１０-8torrよりガス圧の低い雰囲気を
用いることにより、有機薄膜の表面平滑性向上と膜欠陥
低減ができ、その結果、散乱光を低減し、共振器効果に
よる発光の効率の改善を図ることができる。[Operation] By using an atmosphere having a gas pressure lower than 10 -8 torr during vapor deposition, the surface smoothness of the organic thin film can be improved and the film defects can be reduced. As a result, the scattered light can be reduced and the light emission efficiency by the resonator effect can be improved. Can be improved.
【００１５】[0015]
【実施例】図１に、光共振器構造の有機発光素子の断面
図を示す。硝子基板１０１上に、ＴｉＯ2 膜とＳｉＯ2
膜を積層した半透明反射膜１０２を形成している。その
上に、透明導電膜（ＩＴＯ）１０３，トリフェニルジア
ミン誘導体（ＴＡＤ）のホール注入層１０４，アルミキ
レート（Ａｌｑ３）の発光層１０５，Ｉｎ金属電極１０
６を、順に形成している。１０３，１０４，１０５のそ
れぞれの膜厚と屈折率の積から得られる光学的距離の和
は、Ａｌｑ３のＥＬ発光のピーク波長の530ｎｍと一致
させた。EXAMPLE FIG. 1 shows a cross-sectional view of an organic light emitting device having an optical resonator structure. On the glass substrate 101, the TiO 2 film and the SiO 2 film are formed.
A semitransparent reflective film 102 is formed by laminating films. A transparent conductive film (ITO) 103, a hole injection layer 104 of a triphenyldiamine derivative (TAD), a light emitting layer 105 of an aluminum chelate (Alq3), and an In metal electrode 10 are formed thereon.
6 are sequentially formed. The sum of the optical distances obtained from the product of the film thickness and the refractive index of each of 103, 104 and 105 was made to coincide with the peak wavelength of EL emission of 530 nm of Alq3.
【００１６】この共振器の特性は、金属電極表面で生じ
る反射光の品質に大きく影響を受ける。よりよい共振条
件を達成するには、反射光の波面には良質の平面性が必
要であり、平面性から外れた散乱光は共振器の特性にマ
イナスの寄与をする。これを防ぐためには、金属電極を
形成する下地である有機薄膜の表面形状の平坦性が重要
となるが、これは、有機薄膜の形成時に、１０-8torrよ
りガス圧の低い雰囲気を用いることにより達成できた。The characteristics of this resonator are greatly affected by the quality of the reflected light generated on the surface of the metal electrode. In order to achieve better resonance conditions, the wavefront of the reflected light needs to have good flatness, and scattered light that is out of flatness makes a negative contribution to the characteristics of the resonator. In order to prevent this, the flatness of the surface shape of the organic thin film, which is the base for forming the metal electrode, is important. This is to use an atmosphere having a gas pressure lower than 10 -8 torr when forming the organic thin film. Was achieved by
【００１７】図２の構造の試料を作製し、図３の方法で
散乱光強度を観測した。試料の有機薄膜作製時に、１×
１０-9torrを用いた試料と、４×１０-6torrを用いた試
料とで、散乱光のスペクトルを比較した結果を図４に示
す。試料＃４０１は１×10-9torrを用いた試料の測定結
果であり、試料＃４０２は４×１０-6torrを用いた試料
の測定結果である。試料＃４０１の方が１桁以上散乱光
が少ない。A sample having the structure of FIG. 2 was prepared and the scattered light intensity was observed by the method of FIG. 1x when preparing organic thin film of sample
FIG. 4 shows the result of comparing the spectra of scattered light between the sample using 10 −9 torr and the sample using 4 × 10 −6 torr. Sample # 401 is the measurement result of the sample using 1 × 10 −9 torr, and sample # 402 is the measurement result of the sample using 4 × 10 −6 torr. Sample # 401 had less than one digit of scattered light.
【００１８】図５に、蒸着時のガス圧と、散乱光のピー
ク強度の関係を示す。散乱光の強度の減少は、特に１×
１０-8torrのオーダーのガス圧で顕著であり、それより
低いガス圧では変化は小さい。これは、１×１０-8torr
以上の雰囲気で蒸着した時には、クラスター状で蒸発し
た蒸着分子が付着，成長するのに対し、１×１０-8torr
以下の雰囲気で蒸着した時には、分子ごとに分解して蒸
発した蒸着分子が付着，成長するために、表面平滑性の
差が生じたと理解できる。FIG. 5 shows the relationship between the gas pressure during vapor deposition and the peak intensity of scattered light. The decrease in scattered light intensity is especially 1 ×
It is remarkable at a gas pressure of the order of 10 −8 torr, and the change is small at a gas pressure lower than that. This is 1 × 10 -8 torr
When vapor deposition is performed in the above atmosphere, vaporized vapor deposition molecules in cluster form adhere and grow, whereas 1 × 10 -8 torr
It can be understood that when vapor-deposited in the following atmosphere, the vapor-deposited molecules decomposed and vaporized for each molecule adhere and grow, resulting in a difference in surface smoothness.
【００１９】[0019]
【発明の効果】本発明によれば、分子ごとに分解して蒸
発した有機分子の蒸着をすることによって表面平滑性の
高い有機薄膜を形成し、金属電極で生じる散乱光を低減
することにより高い光共振器効果を有した発光素子を作
製できる。According to the present invention, an organic thin film having high surface smoothness is formed by vapor-depositing organic molecules that are decomposed and evaporated for each molecule, and it is improved by reducing scattered light generated at a metal electrode. A light emitting element having an optical resonator effect can be manufactured.
【図１】光共振器構造を有した有機発光素子の断面構造
である。FIG. 1 is a cross-sectional structure of an organic light emitting device having an optical resonator structure.
【図２】金属電極の反射により生じる散乱光強度を比較
するための試料の断面構造である。FIG. 2 is a cross-sectional structure of a sample for comparing scattered light intensity generated by reflection of a metal electrode.
【図３】金属電極の反射により生じる散乱光強度を比較
するための測定方法である。FIG. 3 is a measuring method for comparing scattered light intensities generated by reflection of a metal electrode.
【図４】試料の有機薄膜作製時に、１×１０-9torrを用
いた試料と、４×１０-6torrを用いた試料とで、散乱光
のスペクトルを比較した結果の比較である。FIG. 4 is a comparison of the results of comparing the spectra of scattered light between a sample using 1 × 10 −9 torr and a sample using 4 × 10 −6 torr when forming an organic thin film of the sample.
【図５】蒸着時のガス圧と、散乱光のピーク強度の関係
である。FIG. 5 shows the relationship between the gas pressure during vapor deposition and the peak intensity of scattered light.
１０１…硝子基板、１０２…ＴｉＯ2 膜とＳｉＯ2 膜を
積層した半透明反射膜、１０３…透明伝導膜（ＩＴ
Ｏ）、１０４…ジアミン誘導体（ＴＡＤ）のホール注入
層、１０５…アルミキレート（Ａｌｑ３）の発光層、１
０６…Ｉｎ金属電極、２０１…硝子基板、２０２…アル
ミキレート（Ａｌｑ３）の発光層、２０３…Ｉｎ金属電
極、４０１…１×１０-9torrを用いた試料の散乱光のピ
ーク強度測定結果、４０２…４×１０-6torrを用いた試
料の測定結果。101 ... Glass substrate, 102 ... Semi-transparent reflective film in which TiO 2 film and SiO 2 film are laminated, 103 ... Transparent conductive film (IT
O), 104 ... Diamine derivative (TAD) hole injection layer, 105 ... Aluminum chelate (Alq3) light emitting layer, 1
06 ... In metal electrode, 201 ... Glass substrate, 202 ... Aluminum chelate (Alq3) light emitting layer, 203 ... In metal electrode, 401 ... 1 × 10 −9 torr peak scattered light peak intensity measurement result of sample, 402 … Results of measurement of samples using 4 × 10 −6 torr.
Claims (1)
明反射層上に透明導電層が配置され、該半透明導電層上
に有機薄膜の発光層が設けられ、その上に電極を備えた
有機電界発光素子であって、前記半透明反射層は素子層
での発光の一部を透明基体側に透過し、発光の１部を発
光層側に反射する機能を有し、該半透明反射層と発光層
の背面の電極との間が光共振器として作用するよう構成
されており、有機薄膜の形成時に、１０-8torrよりガス
圧の低い雰囲気を用いる素子。1. A transparent substrate having a semi-transparent reflective layer, a transparent conductive layer disposed on the semi-transparent reflective layer, and an organic thin film emitting layer provided on the semi-transparent conductive layer. An organic electroluminescence device having an electrode, wherein the semitransparent reflection layer has a function of transmitting a part of light emitted from the device layer to a transparent substrate side and reflecting a part of the light emission to a light emitting layer side, An element having a structure in which the semitransparent reflective layer and an electrode on the back surface of the light emitting layer act as an optical resonator, and uses an atmosphere having a gas pressure lower than 10 −8 torr when forming the organic thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5067865A JPH06283270A (en) | 1993-03-26 | 1993-03-26 | Organic light resonator element made in high vacuum |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5067865A JPH06283270A (en) | 1993-03-26 | 1993-03-26 | Organic light resonator element made in high vacuum |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06283270A true JPH06283270A (en) | 1994-10-07 |
Family
ID=13357255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5067865A Pending JPH06283270A (en) | 1993-03-26 | 1993-03-26 | Organic light resonator element made in high vacuum |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06283270A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10172766A (en) * | 1996-12-04 | 1998-06-26 | Hitachi Ltd | Organic electroluminscent element and manufacture thereof |
| US5780174A (en) * | 1995-10-27 | 1998-07-14 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Micro-optical resonator type organic electroluminescent device |
| US6406801B1 (en) | 1998-02-04 | 2002-06-18 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Optical resonator type organic electroluminescent element |
| JP2007052971A (en) * | 2005-08-17 | 2007-03-01 | Seiko Epson Corp | Light emitting device, its design method and electronic apparatus |
| CN102983285A (en) * | 2012-12-10 | 2013-03-20 | 南京邮电大学 | High-efficiency organic light-emitting diode and fabrication method thereof |
-
1993
- 1993-03-26 JP JP5067865A patent/JPH06283270A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5780174A (en) * | 1995-10-27 | 1998-07-14 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Micro-optical resonator type organic electroluminescent device |
| JPH10172766A (en) * | 1996-12-04 | 1998-06-26 | Hitachi Ltd | Organic electroluminscent element and manufacture thereof |
| US6406801B1 (en) | 1998-02-04 | 2002-06-18 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Optical resonator type organic electroluminescent element |
| JP2007052971A (en) * | 2005-08-17 | 2007-03-01 | Seiko Epson Corp | Light emitting device, its design method and electronic apparatus |
| CN102983285A (en) * | 2012-12-10 | 2013-03-20 | 南京邮电大学 | High-efficiency organic light-emitting diode and fabrication method thereof |
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