JPH06273803A - Active matrix liquid crystal display device - Google Patents
Active matrix liquid crystal display deviceInfo
- Publication number
- JPH06273803A JPH06273803A JP437894A JP437894A JPH06273803A JP H06273803 A JPH06273803 A JP H06273803A JP 437894 A JP437894 A JP 437894A JP 437894 A JP437894 A JP 437894A JP H06273803 A JPH06273803 A JP H06273803A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- display device
- crystal display
- pair
- active matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、量産性が良好で低コス
トかつ高画質のアクティブマトリクス型液晶表示装置に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix type liquid crystal display device having good mass productivity, low cost and high image quality.
【０００２】[0002]
【従来の技術】従来のアクティブマトリクス型液晶表示
装置では、液晶組成物層を駆動する電極として２枚の基
板界面上に形成し相対向させた透明電極を用いていた。
これは、液晶組成物層に印加する電界の方向を基板界面
にほぼ垂直な方向とすることで動作する、ツイステッド
ネマチック（ＴＮ）表示方式に代表される表示方式を採
用していることによる。以下、この液晶組成物層に印加
する主たる電界方向が基板界面にほぼ垂直な方向である
表示方式を縦電界方式と称する。2. Description of the Related Art In a conventional active matrix type liquid crystal display device, transparent electrodes, which are formed on the interface between two substrates and face each other, are used as electrodes for driving a liquid crystal composition layer.
This is because a display system typified by a twisted nematic (TN) display system, which operates by making the direction of the electric field applied to the liquid crystal composition layer substantially perpendicular to the substrate interface, is adopted. Hereinafter, a display system in which the main electric field direction applied to the liquid crystal composition layer is a direction substantially perpendicular to the substrate interface is referred to as a vertical electric field system.
【０００３】また、一方の基板上に形成した櫛歯状電極
対を用いて液晶組成物層に電界を印加する方式が、例え
ば特公昭63−21907 号により提案されている。ここで言
う櫛歯状電極対は、図５中の１，２で示すような櫛の歯
のような形状を有する２つの電極を互いの歯の部分が重
ならずに噛み合うように配置したものである。この場
合、液晶組成物層を駆動する電極は透明である必要はな
く、導電性が高く不透明な金属電極を用いることができ
る。また、液晶組成物分子の配向は、電極間に電圧を印
加しない状態において、ホモジニアス配向，９０°ツイ
スト配向あるいはホメオトロピック配向を取ることがで
き、ＴＮモード，ゲストホスト（ＧＨ）モードあるいは
電界制御複屈折（ＥＣＢ）モードなどの電圧効果型表示
方式や、電流効果型の動的散乱（ＤＳ）モード表示方式
を用いることができる。以下、この液晶組成物層に印加
する主たる電界方向が基板界面にほぼ平行な方向である
表示方式を横電界方式と称する。Further, a method of applying an electric field to a liquid crystal composition layer using a comb-teeth-shaped electrode pair formed on one substrate has been proposed, for example, in Japanese Patent Publication No. 63-21907. The comb-tooth-shaped electrode pair referred to here is one in which two electrodes having a comb-tooth-like shape as shown by 1 and 2 in FIG. 5 are arranged so that their teeth do not overlap and mesh with each other. Is. In this case, the electrode that drives the liquid crystal composition layer does not need to be transparent, and a metal electrode having high conductivity and opacity can be used. In addition, the orientation of the liquid crystal composition molecules can be a homogeneous orientation, a 90 ° twist orientation, or a homeotropic orientation in a state in which a voltage is not applied between the electrodes. A voltage effect type display method such as a refraction (ECB) mode or a current effect type dynamic scattering (DS) mode display method can be used. Hereinafter, the display method in which the main electric field direction applied to the liquid crystal composition layer is substantially parallel to the substrate interface is referred to as a lateral electric field method.
【０００４】横電界方式の動作原理を図２および図３を
用いて説明する。The operating principle of the horizontal electric field system will be described with reference to FIGS. 2 and 3.
【０００５】図２（ａ),（ｂ）は液晶表示装置内での液
晶の動作を示す断面図を、図２(ｃ)，（ｄ）はその平面
図を表す。図２ではアクティブ素子を省略し、また、画
素内での櫛歯状電極対の一部分を示した。2 (a) and 2 (b) are sectional views showing the operation of the liquid crystal in the liquid crystal display device, and FIGS. 2 (c) and 2 (d) are plan views thereof. In FIG. 2, the active element is omitted, and a part of the comb-teeth electrode pair in the pixel is shown.
【０００６】電圧無印加時の断面図を図２（ａ）に、そ
の時の平面図を図２（ｃ）に示す。少なくとも一方が透
明な一対の基板３の向き合った表面に櫛歯状の形状をし
た対をなす画素電極１，２が形成され、その上に配向膜
４が塗布および配向処理されている。間には液晶組成物
が挟持されている。棒状の液晶分子５は、画素電極１，
２間に電圧が印加されない時には櫛歯状画素電極対１，
２の長辺方向に対して若干の角度を持つように配向され
ている。上下界面上での液晶分子５の配向方向はここで
は平行である場合を例に説明する。また、液晶組成物の
誘電率異方性は正を想定している。FIG. 2A shows a sectional view when no voltage is applied, and FIG. 2C shows a plan view at that time. Pixel electrodes 1 and 2 each having a comb-like shape are formed on opposite surfaces of a pair of substrates 3 of which at least one is transparent, and an alignment film 4 is applied and alignment-treated thereon. A liquid crystal composition is sandwiched between them. The rod-shaped liquid crystal molecules 5 are the pixel electrodes 1,
When no voltage is applied between the two, the comb-teeth-shaped pixel electrode pair 1,
2 is oriented to have a slight angle with respect to the long side direction. Here, the case where the alignment directions of the liquid crystal molecules 5 on the upper and lower interfaces are parallel will be described as an example. In addition, the dielectric anisotropy of the liquid crystal composition is assumed to be positive.
【０００７】次に、櫛歯状画素電極対１，２間に電圧を
与えて液晶組成物層に電界７を印加すると図２（ｃ),
（ｄ）に示したように電界７の方向に液晶分子５がその
向きを変える。偏光板６を所定の角度に配置することで
電界印加によって光透過率を変えることが可能になる。
図３に示すように、印加電圧の実効値を増大させると相
対的な光透過率が変化する。このように、横電界方式に
よれば透明電極を使用せずにコントラストを与える表示
が可能になる。Next, when a voltage is applied between the pair of comb-teeth-shaped pixel electrodes 1 and 2 to apply an electric field 7 to the liquid crystal composition layer, as shown in FIG.
As shown in (d), the liquid crystal molecules 5 change their directions in the direction of the electric field 7. By arranging the polarizing plate 6 at a predetermined angle, it becomes possible to change the light transmittance by applying an electric field.
As shown in FIG. 3, when the effective value of the applied voltage is increased, the relative light transmittance changes. As described above, according to the horizontal electric field method, it is possible to perform display with contrast without using a transparent electrode.
【０００８】なお、図２では櫛歯状画素電極対１，２を
一方の基板表面に形成したが、一対の基板両方に分けて
も何ら効果は変わるものではない。ただし、配線を微細
化する場合や熱，外力等による種々の変形などを鑑みる
と、一方の基板に備えたほうがより高精度なアライメン
トが可能になり、望ましい。また、液晶組成物の誘電率
異方性は正を想定したが、負であっても構わない。その
場合には初期配向状態を画素電極の長辺方向に垂直な方
向から若干の角度を持つように配向させる。さらに、偏
光板６を配置する角度を変えれば、図３とは逆の傾きを
有する特性を得ることもできる。Although the pair of comb-teeth-shaped pixel electrodes 1 and 2 are formed on the surface of one substrate in FIG. 2, the effect does not change even if they are divided into a pair of substrates. However, in the case of miniaturizing the wiring and in consideration of various deformations due to heat, external force, etc., it is preferable to provide the substrate on one side because more accurate alignment becomes possible. Although the dielectric anisotropy of the liquid crystal composition is assumed to be positive, it may be negative. In that case, the initial alignment state is aligned so as to have a slight angle from the direction perpendicular to the long side direction of the pixel electrode. Further, by changing the angle at which the polarizing plate 6 is arranged, it is possible to obtain a characteristic having an inclination opposite to that in FIG.
【０００９】[0009]
【発明が解決しようとする課題】従来の縦電界方式のア
クティブマトリクス型液晶表示装置では、透明電極の電
圧変動を防止するために、透明電極に電荷蓄積用の容量
素子を接続していた。しかしながら、前記の縦電界方式
では、可能な限り光の利用効率を向上させるために容量
素子の大きさを縮小すると、前記の透明電極に蓄積され
た電荷を保持するためには約１０12Ωcm以上の極めて高
い比抵抗の液晶組成物を使用する必要が生じる。このた
め、低い光学しきい値電圧や適切な大きさの複屈折等を
有し、かつ不純物によって汚染されにくい液晶組成物の
選択の自由度が大幅に限定されていた。さらに、液晶組
成物層の比抵抗は基板界面上の液晶組成物分子を所定方
向に配向制御する配向膜材料にも依存するため、液晶組
成物層の比抵抗を高く保つ配向膜材料を用いる必要があ
る。このため、適切なプレチルト角（基板界面上の液晶
組成物分子の傾き角）を発現し、かつ直流電荷の残留し
にくい配向膜として実用可能な材料は限定されていた。
これらのため、表示むらや残像などの画質劣化が発生し
やすかった。In the conventional vertical electric field type active matrix type liquid crystal display device, in order to prevent the voltage fluctuation of the transparent electrode, the transparent electrode is connected to the capacitance element for storing charges. However, in the vertical electric field method, if the size of the capacitive element is reduced in order to improve the light utilization efficiency as much as possible, in order to retain the charge accumulated in the transparent electrode, it is about 10 12 Ωcm or more. Therefore, it is necessary to use a liquid crystal composition having an extremely high specific resistance. For this reason, the degree of freedom in selecting a liquid crystal composition having a low optical threshold voltage, birefringence of an appropriate size, etc. and being less likely to be contaminated by impurities has been greatly limited. Further, since the specific resistance of the liquid crystal composition layer also depends on the alignment film material that controls the alignment of the liquid crystal composition molecules on the substrate interface in a predetermined direction, it is necessary to use an alignment film material that keeps the specific resistance of the liquid crystal composition layer high. There is. For this reason, materials that can produce a suitable pretilt angle (tilt angle of liquid crystal composition molecules on the substrate interface) and are practically usable as an alignment film in which a DC charge hardly remains are limited.
For these reasons, image quality deterioration such as display unevenness and afterimage is likely to occur.
【００１０】また、前記の従来の横電界方式では、電荷
蓄積用の容量素子を接続していなかったため櫛歯状電極
対の電圧変動を抑えることが不可能であり、表示むらが
発生しやすかった。さらに、櫛歯状電極対を用いるため
光の利用効率は著しく低下し、液晶表示装置の明るさを
向上させることが困難になっていた。Further, in the above-described conventional lateral electric field method, since the capacitance element for storing charge is not connected, it is impossible to suppress the voltage fluctuation of the comb-teeth-shaped electrode pair, and display unevenness is likely to occur. . Furthermore, since the comb-teeth-shaped electrode pair is used, the light utilization efficiency is significantly reduced, and it has been difficult to improve the brightness of the liquid crystal display device.
【００１１】さらに、前記の従来の横電界方式において
も画素電極近傍では基板界面に垂直な方向の電界成分が
発生し、この部分における光漏れによって斜め方向から
見たコントラスト比が低下するという問題があった。Further, even in the above-mentioned conventional lateral electric field system, an electric field component in the direction perpendicular to the substrate interface is generated in the vicinity of the pixel electrode, and light leakage in this part causes a decrease in the contrast ratio when viewed from an oblique direction. there were.
【００１２】本発明はこれらの課題を同時に解決するも
ので、その第１の目的は、使用可能な液晶組成物および
配向膜材料の選択の自由度を広げ、画質劣化を防止する
ことにある。The present invention solves these problems at the same time, and a first object thereof is to expand the degree of freedom in selection of usable liquid crystal compositions and alignment film materials and prevent image quality deterioration.
【００１３】第２の目的は、液晶表示装置の明るさを向
上させることにある。A second object is to improve the brightness of the liquid crystal display device.
【００１４】第３の目的は、斜め方向から見たコントラ
スト比が高い横電界方式を実現する方法を提供すること
にある。A third object is to provide a method for realizing a lateral electric field system having a high contrast ratio when viewed from an oblique direction.
【００１５】[0015]
【課題を解決するための手段】前記の目的を達成するた
めに以下の手段を用いる。The following means are used to achieve the above-mentioned object.
【００１６】少なくとも一方が透明な一対の基板と、前
記基板間に挟持された液晶組成物層と、前記基板のいず
れか一方の基板の向き合った表面にマトリクス状に配置
された複数の走査配線および信号配線と、対をなす画素
電極と、前記画素電極および前記走査配線および信号配
線に接続されたアクティブ素子と、前記各走査配線に接
続された走査配線駆動手段と、前記各信号配線に接続さ
れた信号配線駆動手段とを備えた液晶表示装置におい
て、 ［手段１］前記対をなす画素電極を短冊状の形状とし、
その一方の電極の長辺方向を他方の電極の長辺方向とほ
ぼ平行とし、さらに、対をなす画素電極のうちの少なく
とも一方の電極と、前記走査配線との間に絶縁物を介し
て容量素子を形成する。あるいは、対をなす画素電極の
うちの一方の電極を、隣接する画素における対をなす画
素電極のうちの一方の電極と接続し、対をなす画素電極
のうちの他方の電極との間に絶縁物を介して容量素子を
形成する。特に、前記容量素子を比抵抗が１０10Ωcm以
上の絶縁物を介して形成する。A pair of substrates, at least one of which is transparent, a liquid crystal composition layer sandwiched between the substrates, and a plurality of scanning wirings arranged in a matrix on the facing surfaces of one of the substrates, A signal wire, a pixel electrode forming a pair, an active element connected to the pixel electrode, the scan wire and the signal wire, a scan wire drive unit connected to each scan wire, and a signal wire connected to each signal wire. In the liquid crystal display device including the signal wiring driving means, [Means 1] the paired pixel electrodes have a strip shape,
The long side direction of the one electrode is made substantially parallel to the long side direction of the other electrode, and a capacitor is provided between at least one electrode of the pair of pixel electrodes and the scanning wiring via an insulator. Form an element. Alternatively, one of the paired pixel electrodes is connected to one of the paired pixel electrodes of the adjacent pixel and is insulated from the other of the paired pixel electrodes. A capacitor is formed through the object. Particularly, the capacitance element is formed through an insulator having a specific resistance of 10 10 Ωcm or more.
【００１７】［手段２］前記液晶組成物の比抵抗を１０
10Ωcm以上とする。望ましくは、前記容量素子を構成す
る絶縁物の比抵抗と誘電率の積が、液晶組成物の比抵抗
と誘電率の積の値以上である部材を用いる。さらに、前
記走査配線駆動手段から出力される駆動信号における１
垂直走査期間を、前記容量素子を構成する絶縁物の比抵
抗と誘電率の積で表わされる時定数よりも小さく設定す
ることが望ましい。[Means 2] The liquid crystal composition has a specific resistance of 10
It should be 10 Ωcm or more. Desirably, a member is used in which the product of the specific resistance and the dielectric constant of the insulator forming the capacitive element is equal to or larger than the product of the specific resistance and the dielectric constant of the liquid crystal composition. Further, 1 in the drive signal output from the scanning wiring drive means.
It is desirable that the vertical scanning period is set to be smaller than the time constant represented by the product of the specific resistance and the dielectric constant of the insulator forming the capacitive element.
【００１８】［手段３］前記対をなす画素電極の短辺の
長さを、対をなす画素電極間の距離より短くする。ま
た、二つ以上の非導電性構成部材を有し、かつそれらの
うちの少なくとも一つの部材の誘電率が前記液晶組成物
の誘電率よりも小さい部材を用いる。望ましくは、前記
液晶組成物層に接する部材として、その誘電率が前記液
晶組成物の誘電率よりも小さい部材を用いる。[Means 3] The short sides of the pair of pixel electrodes are made shorter than the distance between the pair of pixel electrodes. Further, a member having two or more non-conductive constituent members and at least one member of them having a dielectric constant smaller than that of the liquid crystal composition is used. Desirably, a member having a dielectric constant smaller than that of the liquid crystal composition is used as the member in contact with the liquid crystal composition layer.
【００１９】[0019]
【作用】前記第１の手段によれば、対をなす画素電極は
液晶組成物層に対して主として基板界面に平行な電界を
印加する構造を有しており、電極間の距離は従来の縦電
界方式のアクティブマトリクス型液晶表示装置における
相対向させた透明電極間の距離に比べて大きくとること
ができる。また、等価的な断面積は従来のものより小さ
く抑えることができる。したがって、本発明による対を
なす画素電極間の電気抵抗は従来のアクティブマトリク
ス型液晶表示装置における相対向させた透明電極間の電
気抵抗は桁違いに大きくすることができる。さらに、本
発明による対をなす画素電極間の静電容量は容量素子と
並列接続になり、電気抵抗も十分高い容量素子を実現で
きる。これにより、画素電極に蓄積された電荷を保持す
ることが容易になり、従来より低い比抵抗の液晶組成物
を用いることが可能になる。また、画素電極は櫛歯状電
極対に比べて単純な形状であるため、光の利用効率を向
上させる。さらに、画素電極近傍において発生する基板
界面に垂直な方向の電界成分を横電界成分に比べて小さ
く抑えることが可能になる。また、対をなす画素電極の
うちの一方の電極を、隣接する画素における対をなす画
素電極のうちの一方の電極と接続した場合には、従来の
アクティブマトリクス型液晶表示装置における共通電極
とほぼ同等の作用をする。According to the first means, the paired pixel electrodes have a structure for applying an electric field mainly to the liquid crystal composition layer in parallel to the substrate interface, and the distance between the electrodes is the same as in the conventional vertical direction. The distance can be made larger than the distance between the transparent electrodes facing each other in the electric field type active matrix liquid crystal display device. Also, the equivalent cross-sectional area can be suppressed smaller than that of the conventional one. Therefore, the electric resistance between the pair of pixel electrodes according to the present invention can be increased by an order of magnitude higher than the electric resistance between the transparent electrodes facing each other in the conventional active matrix liquid crystal display device. Furthermore, the capacitance between the pair of pixel electrodes according to the present invention is connected in parallel with the capacitance element, and a capacitance element having a sufficiently high electric resistance can be realized. As a result, it becomes easy to hold the charge accumulated in the pixel electrode, and it becomes possible to use a liquid crystal composition having a specific resistance lower than that of a conventional one. Moreover, since the pixel electrode has a simpler shape than the comb-teeth-shaped electrode pair, the light utilization efficiency is improved. Further, the electric field component generated in the vicinity of the pixel electrode in the direction perpendicular to the substrate interface can be suppressed to be smaller than the lateral electric field component. Further, when one of the paired pixel electrodes is connected to one of the paired pixel electrodes of the adjacent pixels, it is almost the same as the common electrode in the conventional active matrix liquid crystal display device. Has the same effect.
【００２０】前記第２の手段によれば、従来より低い比
抵抗の液晶組成物を用いても画素電極に蓄積された電荷
を保持するのに十分な電気抵抗を有する液晶組成物層を
構成することが可能になり、さらに、１垂直走査期間内
に画素電極に蓄積された電荷が漏れていくのを抑制する
ことが可能になるため、画素電極の電圧変動を十分小さ
く抑えることが容易になる。According to the second means, even if a liquid crystal composition having a lower specific resistance than the conventional one is used, a liquid crystal composition layer having an electric resistance sufficient to retain the charges accumulated in the pixel electrode is formed. In addition, it is possible to prevent the charge accumulated in the pixel electrode from leaking within one vertical scanning period, and thus it becomes easy to suppress the voltage fluctuation of the pixel electrode to a sufficiently small level. .
【００２１】前記第３の手段によれば、液晶組成物層に
電界が集中しやすくなるため、液晶組成物層に横電界を
効率良く印加でき、画素電極近傍において発生する基板
界面に垂直な方向の電界成分を横電界成分に比べて小さ
く抑えることが可能になる。According to the third means, since the electric field is easily concentrated in the liquid crystal composition layer, the lateral electric field can be efficiently applied to the liquid crystal composition layer, and the direction perpendicular to the substrate interface generated in the vicinity of the pixel electrode. It becomes possible to suppress the electric field component of (3) smaller than the horizontal electric field component.
【００２２】[0022]
【実施例】以下、本発明の実施例を図面を用いて詳細に
説明する。Embodiments of the present invention will now be described in detail with reference to the drawings.
【００２３】［実施例１］図１（ａ）は本実施例におけ
るアクティブマトリクス型液晶表示装置の平面図の一部
である。図１（ｂ）は図１（ａ）のＡ−Ａ′における断
面図、図１（ｃ）は図１（ａ）のＢ−Ｂ′における断面
図である。基板として表面を研磨したガラス基板を２枚
用いた。図１（ａ）に示すように、一方の基板３１上に
走査配線１０を互いに平行に配置し、膜厚約３００ｎｍ
の窒化シリコンからなるゲート絶縁膜１３，アモルファ
スシリコンからなるチャネル層１６を形成し、短冊状の
第１の画素電極１および信号配線１１をいずれも走査配
線１０と交差するような方向に配置した。これにより、
走査配線１０と信号配線１１の各交点付近にアクティブ
素子である薄膜トランジスタが形成される。第１の画素
電極１と対をなすべき他方の画素電極は隣接する画素ど
うしで接続し、ストライプ状の第２の画素電極２として
図１（ｂ）に示すように他方の基板３２上に形成した。
この第２の画素電極は従来のアクティブマトリクス型液
晶表示装置における共通電極とほぼ同等の作用をする。
これにより、第１の画素電極１と第２の画素電極２の間
で液晶組成物層５０に対して電界７が印加され、かつそ
の方向が基板界面にほぼ平行な横電界方式が実現でき
る。対をなす画素電極１，２は従来の櫛歯状電極対に比
べて単純な形状であるため、光の利用効率は以下のよう
になる。画素ピッチは水平方向（すなわち共通電極２の
間隔）が８０μｍ、垂直方向（すなわち走査配線１０の
間隔）が２４０μｍである場合、各部の寸法を、第１の
画素電極１の幅（短辺の長さ）は４μｍ、共通電極２の
幅（短辺の長さ）は１２μｍ、第１の画素電極１と第２
の画素電極２の間の距離は２３μｍとして、第１の画素
電極１および第２の画素電極２の短辺の長さをそれらの
間の距離よりも短くすることができた。この時、光の利
用効率を画素面積に占める有効表示面積と定義すると、
５０.３％になる。したがって、本実施例によるアクテ
ィブマトリクス型液晶表示装置の透過率は８.４％ にな
った。容量素子１２は、図１（ｃ）に示すように、第１
の画素電極１を走査配線１０の上に２７μｍだけ伸ばし
てゲート絶縁膜１３を挟む構造として形成した。よっ
て、この容量素子１２の静電容量は約21.4ｆＦになっ
た。[Embodiment 1] FIG. 1A is a part of a plan view of an active matrix type liquid crystal display device in this embodiment. 1B is a sectional view taken along the line AA ′ in FIG. 1A, and FIG. 1C is a sectional view taken along the line BB ′ in FIG. Two glass substrates whose surfaces were polished were used as the substrates. As shown in FIG. 1A, the scanning wirings 10 are arranged parallel to each other on one of the substrates 31, and the film thickness is about 300 nm.
The gate insulating film 13 made of silicon nitride and the channel layer 16 made of amorphous silicon were formed, and the strip-shaped first pixel electrodes 1 and the signal lines 11 were arranged in a direction intersecting the scanning lines 10. This allows
A thin film transistor, which is an active element, is formed near each intersection of the scanning wiring 10 and the signal wiring 11. The other pixel electrode that should form a pair with the first pixel electrode 1 is connected to adjacent pixels, and is formed as a stripe-shaped second pixel electrode 2 on the other substrate 32 as shown in FIG. 1B. did.
The second pixel electrode has almost the same function as the common electrode in the conventional active matrix type liquid crystal display device.
Accordingly, an electric field 7 is applied to the liquid crystal composition layer 50 between the first pixel electrode 1 and the second pixel electrode 2, and a lateral electric field method in which the direction is substantially parallel to the substrate interface can be realized. Since the pair of pixel electrodes 1 and 2 has a simpler shape than the conventional comb-teeth-shaped electrode pair, the light use efficiency is as follows. When the pixel pitch is 80 μm in the horizontal direction (that is, the spacing between the common electrodes 2) and 240 μm in the vertical direction (that is, the spacing between the scanning wirings 10), the dimensions of each part are set to the width of the first pixel electrode 1 (the length of the short side Is 4 μm, the width of the common electrode 2 (length of the short side) is 12 μm, and the first pixel electrode 1 and the second pixel electrode
The distance between the pixel electrodes 2 was 23 μm, and the length of the short sides of the first pixel electrode 1 and the second pixel electrode 2 could be shorter than the distance between them. At this time, if the light use efficiency is defined as the effective display area occupying the pixel area,
It will be 50.3%. Therefore, the transmittance of the active matrix type liquid crystal display device according to this example was 8.4%. As shown in FIG. 1C, the capacitive element 12 has a first
The pixel electrode 1 was extended by 27 μm on the scanning wiring 10 to form a structure sandwiching the gate insulating film 13. Therefore, the capacitance of the capacitive element 12 was about 21.4 fF.
【００２４】さらに、この表面に保護膜としてエポキシ
系の樹脂からなる透明な有機ポリマ１４，１５を積層
し、ポリイミド系の樹脂からなる配向膜４を積層した。
各基板上の配向膜４を、プレチルト角が約０.５度 、両
基板界面上のラビング方向８が互いにほぼ反平行で、か
つ印加電界方向７とのなす角度が８５度になるようにラ
ビング処理を施した。両基板間に誘電率異方性が正でそ
の値が４.５ であり、複屈折が０.０７２(５８９ｎｍ，
２０℃）のネマチック液晶組成物５０を挟んだ。ギャッ
プは液晶封入状態で４.５μｍ とした。これにより、第
１の画素電極１と第２の画素電極２の間の静電容量は約
２.１４ｆＦ になった。一方の基板の外側には偏光板６
をその偏光透過軸がラビング方向８にほぼ平行になるよ
うに配置し、他方の基板の外側には偏光板６をそれに直
交するように配置した。これによりノーマリクローズ特
性を得る。各走査配線１０および各信号配線１１にはそ
れぞれ走査配線駆動用ＬＳＩおよび信号配線駆動用ＬＳ
Ｉ（図示せず）を接続した。第１の画素電極１に蓄積さ
れた電荷は、第１の画素電極１と第２の画素電極２の間
の静電容量と容量素子１２を並列接続した容量である約
２３.５ｆＦ に蓄積されることになり、液晶組成物５０
の比抵抗が５×１０10Ωcmであっても第１の画素電極１
の電圧変動を抑制することができる。このため、画質劣
化を防止することができた。Further, transparent organic polymers 14 and 15 made of an epoxy resin were laminated on this surface as a protective film, and an alignment film 4 made of a polyimide resin was laminated.
The alignment film 4 on each substrate is rubbed so that the pretilt angle is about 0.5 degrees, the rubbing directions 8 on the interfaces of both substrates are substantially antiparallel to each other, and the angle formed with the applied electric field direction 7 is 85 degrees. Treated. The dielectric anisotropy between both substrates is positive and its value is 4.5, and the birefringence is 0.072 (589 nm,
The nematic liquid crystal composition 50 at 20 ° C. was sandwiched. The gap was 4.5 μm with the liquid crystal enclosed. As a result, the electrostatic capacitance between the first pixel electrode 1 and the second pixel electrode 2 became about 2.14 fF. A polarizing plate 6 is provided outside one of the substrates.
Was arranged so that its polarization transmission axis was substantially parallel to the rubbing direction 8, and the polarizing plate 6 was arranged outside the other substrate so as to be orthogonal thereto. As a result, normally closed characteristics are obtained. Each scanning wiring 10 and each signal wiring 11 has a scanning wiring driving LSI and a signal wiring driving LS, respectively.
I (not shown) was connected. The electric charge accumulated in the first pixel electrode 1 is accumulated in about 23.5 fF which is the capacitance between the electrostatic capacitance between the first pixel electrode 1 and the second pixel electrode 2 and the capacitance element 12 connected in parallel. Therefore, the liquid crystal composition 50
Even if the specific resistance of the first pixel electrode is 5 × 10 10 Ωcm,
The voltage fluctuation can be suppressed. Therefore, it is possible to prevent the deterioration of image quality.
【００２５】本実施例で用いた液晶組成物５０は比誘電
率６.７ ，比抵抗５×１０10Ωcmなる値を有し、また、
容量素子１２を構成する絶縁物として用いた窒化シリコ
ンは比誘電率６.７ ，比抵抗５×１０16Ωcmなる値を有
する。すなわち、液晶組成物５０，容量素子１２を構成
する絶縁物ともその比抵抗は１０10Ωcm以上であり、窒
化シリコンの誘電率と比抵抗の積は約３×１０4 秒と液
晶組成物５０の誘電率と比抵抗の積約０.０３ 秒より大
きい。また、走査配線駆動用ＬＳＩから出力される駆動
信号における１垂直走査期間は通常の液晶表示装置にお
いては約16.6msであって、約３×１０4 秒よりはるかに
小さいことを満たしている。このため、第１の画素電極
１に蓄積された電荷が漏れていく時定数を十分大きくと
ることが可能になり、第１の画素電極１の電圧変動を十
分小さく抑えることが容易になる。本実施例で用いた液
晶組成物５０は不純物によって汚染されにくい特性を有
し、また、本実施例で用いた配向膜４は直流電荷が全く
残留しない特性を有する。したがって、表示むらや残像
などの画質劣化を防止することができた。The liquid crystal composition 50 used in this example has a relative dielectric constant of 6.7 and a specific resistance of 5 × 10 10 Ωcm.
Silicon nitride used as an insulator forming the capacitor 12 has a relative dielectric constant of 6.7 and a specific resistance of 5 × 10 16 Ωcm. That is, the specific resistance of both the liquid crystal composition 50 and the insulator forming the capacitive element 12 is 10 10 Ωcm or more, and the product of the dielectric constant of silicon nitride and the specific resistance is about 3 × 10 4 seconds, which is equal to that of the liquid crystal composition 50. The product of the dielectric constant and the specific resistance is greater than about 0.03 seconds. Further, one vertical scanning period in the drive signal output from the scan wiring driving LSI is about 16.6 ms in a normal liquid crystal display device, which satisfies far less than about 3 × 10 4 seconds. For this reason, it is possible to set a sufficiently large time constant for the charges accumulated in the first pixel electrode 1 to leak, and it becomes easy to suppress the voltage fluctuation of the first pixel electrode 1 to be sufficiently small. The liquid crystal composition 50 used in this example has a characteristic that it is unlikely to be contaminated by impurities, and the alignment film 4 used in this example has a characteristic that no DC charge remains. Therefore, it is possible to prevent image quality deterioration such as display unevenness and afterimage.
【００２６】さらに、本実施例で用いた配向膜４は比誘
電率３.４ なる値を有する。すなわち、液晶組成物層５
０と接する非導電性部材である配向膜４は液晶組成物層
５０の比誘電率６.７ より小さい比誘電率を有する。電
磁気学の理論によれば電界は誘電率の高い部分に集中し
やすい性質を有するため、配向膜４よりも液晶組成物層
５０に電界が集中しやすくなる。また、電界は電極表面
に対して垂直な方向に出入りする性質を有するため、第
１の画素電極１および第２の画素電極２の表面近傍では
基板界面に垂直な方向の縦電界成分が発生する。しか
し、第１の画素電極１と第２の画素電極２の間では電界
はその連続性を保つように曲がって横電界を形成する。
本実施例では、第１の画素電極１および第２の画素電極
２の短辺の長さを第１の画素電極１と第２の画素電極２
の間の距離よりも短くしたことにより、縦電界成分の領
域よりも横電界成分の領域を大きくとることができる。
これらのため、液晶組成物層５０に電界が集中しやすく
なって、液晶組成物層５０に横電界を効率良く印加で
き、第１の画素電極１および第２の画素電極２の近傍に
おいて発生する基板界面に垂直な方向の電界成分を横電
界成分７に比べて小さく抑えることが可能になる。した
がって、第１の画素電極１および第２の画素電極２の近
傍において液晶分子が立ち上がることが抑えられるた
め、これによる光漏れを防止することができ、斜め方向
から見たコントラスト比は１００以上になった。Further, the alignment film 4 used in this embodiment has a value of relative permittivity of 3.4. That is, the liquid crystal composition layer 5
The orientation film 4, which is a non-conductive member in contact with 0, has a relative dielectric constant smaller than the relative dielectric constant 6.7 of the liquid crystal composition layer 50. According to the theory of electromagnetics, the electric field tends to be concentrated in the portion having a high dielectric constant, so that the electric field is more likely to be concentrated in the liquid crystal composition layer 50 than in the alignment film 4. Further, since the electric field has a property of entering and leaving in a direction perpendicular to the electrode surface, a vertical electric field component in a direction perpendicular to the substrate interface is generated in the vicinity of the surfaces of the first pixel electrode 1 and the second pixel electrode 2. . However, between the first pixel electrode 1 and the second pixel electrode 2, the electric field bends so as to maintain its continuity and forms a lateral electric field.
In this embodiment, the lengths of the short sides of the first pixel electrode 1 and the second pixel electrode 2 are set to the first pixel electrode 1 and the second pixel electrode 2.
By making the distance shorter than the distance between them, the region of the horizontal electric field component can be made larger than the region of the vertical electric field component.
For these reasons, the electric field is likely to be concentrated in the liquid crystal composition layer 50, the lateral electric field can be efficiently applied to the liquid crystal composition layer 50, and the lateral electric field is generated in the vicinity of the first pixel electrode 1 and the second pixel electrode 2. The electric field component in the direction perpendicular to the substrate interface can be suppressed smaller than the lateral electric field component 7. Therefore, rising of the liquid crystal molecules in the vicinity of the first pixel electrode 1 and the second pixel electrode 2 is suppressed, light leakage due to this can be prevented, and the contrast ratio seen from an oblique direction becomes 100 or more. became.
【００２７】なお、本実施例ではガラス基板を用いた
が、透明なプラスチック基板のようなものでもよく、ま
た、どちらか一方の基板はシリコン基板のような不透明
なものでも構わない。また、各配線の形状は図２に示す
形状に限られる訳ではない。また、ゲート絶縁膜として
は窒化シリコンだけでなく、酸化シリコンや酸化アル
ミ，酸化タンタル，酸化チタンなどの絶縁物を用いても
よく、それらの積層物でも構わない。さらにその場合、
使用した部材の誘電率や比抵抗は本実施例記載の数値で
なくても本発明の要件を満たしていればよい。また、チ
ャネル層としてはアモルファスシリコンだけでなく、多
結晶シリコンやセレン化カドミウムなどの半導体を用い
てもよく、アクティブ素子である薄膜トランジスタの個
数は複数であっても構わない。また、各電極の寸法や距
離は必ずしも本実施例の値を採用する必要はなく、アク
ティブマトリクス型液晶表示装置の画素ピッチや画面サ
イズに応じて寸法や距離を変えても構わない。また、保
護膜は必ずしもエポキシ系の樹脂からなる透明な有機ポ
リマである必要はなく、配向膜も必ずしもポリイミド系
の樹脂である必要はなく、これらの部材の誘電率や特性
が本発明の要件を満たしていればよい。また、配向膜の
プレチルト角やラビング角度も本実施例記載の数値でな
くてもよく、部材によっては保護膜が配向膜を兼ねるこ
とも可能である。また、液晶組成物は本実施例記載の誘
電率異方性や複屈折，比抵抗，比誘電率を有していなく
ても、比抵抗や誘電率が本発明の要件を満たしていれば
よい。さらに、液晶組成物分子の配向は、ホモジニアス
配向，９０°ツイスト配向あるいはホメオトロピック配
向であってもよく、ＴＮモード，ＧＨモード，ＥＣＢモ
ードなどの方式であっても構わない。また、ギャップも
所望の特性が得られるように変えてよい。また、偏光板
を配置する角度もラビング角度や液晶組成物分子の配向
に応じて変えることができる。また、１垂直走査期間は
約１６.６ｍｓ に限らず、本発明の要件を満たす範囲で
変えても構わない。このように、本実施例は本発明を完
全に制限するものではない。Although the glass substrate is used in the present embodiment, it may be a transparent plastic substrate or one of the substrates may be an opaque substrate such as a silicon substrate. The shape of each wiring is not limited to the shape shown in FIG. Further, as the gate insulating film, not only silicon nitride but also an insulating material such as silicon oxide, aluminum oxide, tantalum oxide, titanium oxide, or the like may be used, or a laminated body thereof may be used. And in that case,
The dielectric constant and the specific resistance of the members used are not limited to the numerical values described in this embodiment as long as they satisfy the requirements of the present invention. Further, not only amorphous silicon but also a semiconductor such as polycrystalline silicon or cadmium selenide may be used for the channel layer, and the number of thin film transistors which are active elements may be plural. Further, the size and distance of each electrode do not necessarily have to adopt the values of this embodiment, and the size and distance may be changed according to the pixel pitch and screen size of the active matrix liquid crystal display device. Further, the protective film does not necessarily have to be a transparent organic polymer made of an epoxy resin, and the alignment film does not necessarily have to be a polyimide resin, and the dielectric constant and characteristics of these members meet the requirements of the present invention. It only has to meet. Further, the pretilt angle and the rubbing angle of the alignment film do not have to be the values described in this embodiment, and the protective film may also serve as the alignment film depending on the member. Further, the liquid crystal composition does not need to have the dielectric anisotropy, birefringence, specific resistance, or specific dielectric constant described in this example, as long as the specific resistance or dielectric constant satisfies the requirements of the present invention. . Further, the orientation of the liquid crystal composition molecules may be homogeneous orientation, 90 ° twist orientation or homeotropic orientation, and may be TN mode, GH mode, ECB mode or the like. Also, the gap may be changed to obtain desired characteristics. The angle at which the polarizing plate is arranged can also be changed according to the rubbing angle and the orientation of the liquid crystal composition molecules. Further, one vertical scanning period is not limited to about 16.6 ms, and may be changed within a range satisfying the requirements of the present invention. As described above, the present embodiment does not completely limit the present invention.
【００２８】［比較例１］従来の縦電界方式であるツイ
ステッドネマチック（ＴＮ）方式を用いたアクティブマ
トリクス型液晶表示装置を第１の比較例とする。図４に
示すように、この方式では、アクティブ素子を形成した
基板３１側に透明な画素電極１をマトリクス状に配置
し、これに対向する基板３２の表面に表示領域全面にわ
たる共通電極２′を形成している。ネマチック液晶組成
物５０および配向膜４の材料としては実施例１と同一の
部材を用い、ギャップは７.３μｍ 、液晶分子のツイス
ト角は９０度とした。Comparative Example 1 An active matrix type liquid crystal display device using the conventional twisted nematic (TN) system, which is a vertical electric field system, will be referred to as a first comparative example. As shown in FIG. 4, in this method, the transparent pixel electrodes 1 are arranged in a matrix on the side of the substrate 31 on which the active elements are formed, and a common electrode 2'that covers the entire display area is formed on the surface of the substrate 32 facing the transparent pixel electrodes 1. Is forming. The same members as in Example 1 were used as the materials for the nematic liquid crystal composition 50 and the alignment film 4, the gap was 7.3 μm, and the twist angle of liquid crystal molecules was 90 °.
【００２９】本比較例で用いた液晶組成物５０の比抵抗
は５×１０10Ωcmであるため、縦電界方式のアクティブ
マトリクス型液晶表示装置に用いるには比抵抗が低い。
このため、画素電極１に蓄積された電荷が漏れやすくな
り、画素電極１の電圧変動を小さく抑えることが不可能
になって、画質劣化が発生した。また、本比較例で用い
た配向膜４のプレチルト角は約０.５ 度であるため、基
板３１および３２の表面の断差構造のある部分で液晶分
子の逆チルトや逆ツイストなどの配向不良ドメインが発
生した。これによる光漏れによって斜め方向だけでなく
正面から見たコントラスト比も１０以下に低下した。Since the liquid crystal composition 50 used in this comparative example has a specific resistance of 5 × 10 10 Ωcm, it has a low specific resistance for use in a vertical electric field type active matrix liquid crystal display device.
For this reason, the charge accumulated in the pixel electrode 1 easily leaks, and it becomes impossible to suppress the voltage fluctuation of the pixel electrode 1 to a small extent, resulting in deterioration of image quality. In addition, since the pretilt angle of the alignment film 4 used in this comparative example is about 0.5 degree, alignment defects such as reverse tilt and reverse twist of the liquid crystal molecules are generated at the portions of the surfaces of the substrates 31 and 32 having the differential structure. Domain occurred. Due to light leakage due to this, the contrast ratio when viewed from the front as well as in the oblique direction was reduced to 10 or less.
【００３０】以上のように、従来のＴＮ方式のアクティ
ブマトリクス型液晶表示装置では使用不可能な液晶組成
物や配向膜材料も、本発明による実施例１では十分使用
可能であり、液晶組成物や配向膜材料の選択の自由度が
拡大する。As described above, the liquid crystal composition and the alignment film material, which cannot be used in the conventional active matrix type liquid crystal display device of the TN system, can be sufficiently used in Example 1 according to the present invention. The degree of freedom in selecting the alignment film material is expanded.
【００３１】［比較例２］図５に示すような、従来の櫛
歯状電極対を用いた横電界方式のアクティブマトリクス
型液晶表示装置を第２の比較例とする。本比較例は、画
素電極が櫛歯状電極対であることおよび容量素子を形成
していないことを除いて実施例１と同一である。本方式
では、電極の加工精度の点から最小寸法を４μｍ以下に
することが不可能であった。このため櫛歯状画素電極
１，２の櫛歯に相当する部分の幅（短辺の長さ）を櫛歯
どうしが噛み合う間隔（対をなす電極間の距離）と等し
くとると、光の利用効率は１５.２％ と低下してしま
い、本比較例のアクティブマトリクス型液晶表示装置の
透過率は２.５％ になった。また、櫛歯状画素電極１，
２の近傍において発生する基板界面に垂直な方向の電界
成分を横電界成分に比べて小さく抑えることが不可能に
なった。このため、斜め方向から見たコントラスト比が
１０以下に低下した。また、櫛歯状画素電極１，２に並
列に容量素子を有しないため、櫛歯状画素電極１，２の
電圧変動を抑えることが不可能であり、表示むらが発生
した。[Comparative Example 2] An active matrix type liquid crystal display device of the horizontal electric field type using a conventional comb-teeth electrode pair as shown in FIG. 5 is used as a second comparative example. This comparative example is the same as Example 1 except that the pixel electrode is a comb-teeth-shaped electrode pair and that no capacitive element is formed. In this method, it was impossible to set the minimum dimension to 4 μm or less in terms of the processing accuracy of the electrode. Therefore, if the width of the portion corresponding to the comb teeth of the comb-teeth-shaped pixel electrodes 1 and 2 (the length of the short side) is made equal to the interval at which the comb teeth mesh with each other (the distance between the pair of electrodes), the light utilization The efficiency was reduced to 15.2%, and the transmittance of the active matrix type liquid crystal display device of this comparative example was 2.5%. Also, the comb-shaped pixel electrodes 1,
It becomes impossible to suppress the electric field component generated in the vicinity of 2 in the direction perpendicular to the substrate interface to be smaller than the lateral electric field component. For this reason, the contrast ratio when viewed from an oblique direction was reduced to 10 or less. Further, since no capacitive element is provided in parallel with the comb-teeth-shaped pixel electrodes 1 and 2, it is impossible to suppress the voltage variation of the comb-teeth-shaped pixel electrodes 1 and 2, and display unevenness occurs.
【００３２】以上のように、従来の櫛歯状電極対を用い
た場合には、本発明による実施例１に比べて、光の利用
効率が低下して明るさが低下し、画素電極の電圧変動に
よって表示むらが発生し、斜め方向から見たコントラス
ト比が低下した。As described above, when the conventional comb-teeth-shaped electrode pair is used, the light utilization efficiency is lowered and the brightness is lowered, and the voltage of the pixel electrode is reduced, as compared with the first embodiment according to the present invention. The fluctuation caused display unevenness and lowered the contrast ratio when viewed from an oblique direction.
【００３３】［比較例３］本比較例は容量素子を構成す
る絶縁物の比抵抗が５×１０9Ωcm と低いこと以外は実
施例１と同一である。この場合、容量素子１２を構成す
る絶縁物の比抵抗と誘電率の積は約０.００３秒(＝３ｍ
ｓ）であり、液晶組成物層５０の比抵抗と誘電率の積
０.０３ 秒より小さい。通常の液晶表示装置においては
走査配線駆動用ＬＳＩから出力される駆動信号における
１垂直走査期間は約１６.６ｍｓ であって、この１垂直
走査期間を約３ｍｓより小さく設定すると走査配線駆動
用LSIおよび信号配線駆動用ＬＳＩを通常の５倍以上の
高速で動作するようにする必要があり、非常に高価なＬ
ＳＩを用いなければならないという問題が生じる。逆
に、走査配線駆動用ＬＳＩから出力される駆動信号にお
ける１垂直走査期間を約１６.６ｍｓ のままに設定する
と、本比較例では、第１の画素電極１に並列に容量素子
１２を有していても、第１の画素電極１に蓄積された電
荷が漏れていく時定数を十分大きくとることが不可能に
なる。このため、第１の画素電極１の電圧変動を十分小
さく抑えることが不可能であり、表示むらが発生した。[Comparative Example 3] This comparative example is the same as Example 1 except that the specific resistance of the insulator constituting the capacitor is as low as 5 × 10 9 Ωcm. In this case, the product of the specific resistance and the dielectric constant of the insulating material forming the capacitive element 12 is about 0.003 seconds (= 3 m
s), which is smaller than the product of the specific resistance and the dielectric constant of the liquid crystal composition layer 50, which is 0.03 seconds. In a normal liquid crystal display device, one vertical scanning period in the drive signal output from the scanning wiring driving LSI is about 16.6 ms. If this one vertical scanning period is set to be less than about 3 ms, the scanning wiring driving LSI and It is necessary to operate the signal wiring drive LSI at a speed five times or more higher than usual, which is very expensive.
The problem arises that SI must be used. On the contrary, if one vertical scanning period in the drive signal output from the scanning wiring driving LSI is set to be about 16.6 ms, this comparative example has the capacitive element 12 in parallel with the first pixel electrode 1. However, it becomes impossible to set a sufficiently large time constant for leakage of charges accumulated in the first pixel electrode 1. Therefore, it is impossible to suppress the voltage fluctuation of the first pixel electrode 1 to a sufficiently small value, and display unevenness occurs.
【００３４】［比較例４］本比較例は液晶組成物層の比
抵抗が５×１０9Ωcm と低いこと以外は実施例１と同一
である。この場合、第１の画素電極１に並列に容量素子
１２を有していても、液晶層の抵抗が小さいため、第１
の画素電極１に蓄積された電荷が漏れていく時定数を十
分大きくとることが不可能になる。このため、第１の画
素電極１の電圧変動を十分小さく抑えることが不可能で
あり、表示むらが発生した。Comparative Example 4 This comparative example is the same as Example 1 except that the specific resistance of the liquid crystal composition layer is as low as 5 × 10 9 Ωcm. In this case, even if the capacitor 12 is provided in parallel with the first pixel electrode 1, since the resistance of the liquid crystal layer is small,
It becomes impossible to take a sufficiently large time constant for the charges accumulated in the pixel electrode 1 to leak. Therefore, it is impossible to suppress the voltage fluctuation of the first pixel electrode 1 to a sufficiently small value, and display unevenness occurs.
【００３５】［実施例２］本実施例の構成は下記の要件
を除けば実施例１と同一である。[Embodiment 2] The configuration of this embodiment is the same as that of Embodiment 1 except for the following requirements.
【００３６】図６（ａ）は本実施例におけるアクティブ
マトリクス型液晶表示装置の平面図の一部である。図６
（ｂ）は図６（ａ）のＡ−Ａ′における断面図、図６
（ｃ）は図６（ａ）のＢ−Ｂ′における断面図である。
実施例１において画素電極１と走査配線１０で窒化シリ
コンからなるゲート絶縁膜１３を挟む構造であった容量
素子１２を、図６（ｃ）に示すように、第１の画素電極
１と第２の画素電極２で液晶組成物層５０を挟む構造に
変えた。本実施例では、容量素子１２の静電容量を第１
の画素電極１と第２の画素電極２の間の静電容量と完全
に並列接続することが可能になるため、信号配線１０の
電圧変動の影響は第１の画素電極１に及ばなくなる。こ
のため、第１の画素電極１の電圧変動をさらに抑えるこ
とができ、表示むらは発生しなかった。FIG. 6A is a part of a plan view of the active matrix type liquid crystal display device in this embodiment. Figure 6
6B is a sectional view taken along the line AA ′ in FIG.
6C is a sectional view taken along line BB ′ of FIG.
As shown in FIG. 6C, the capacitive element 12 having the structure in which the gate insulating film 13 made of silicon nitride is sandwiched between the pixel electrode 1 and the scanning wiring 10 in the first embodiment is The liquid crystal composition layer 50 is sandwiched between the pixel electrodes 2 of FIG. In this embodiment, the capacitance of the capacitive element 12 is set to the first value.
Since the electrostatic capacitance between the pixel electrode 1 and the second pixel electrode 2 can be completely connected in parallel, the influence of the voltage fluctuation of the signal line 10 does not reach the first pixel electrode 1. Therefore, the voltage fluctuation of the first pixel electrode 1 can be further suppressed, and the display unevenness does not occur.
【００３７】本実施例におけるアクティブマトリクス型
液晶表示装置でも画質劣化は発生せず、実施例１と同様
の効果が得られた。Even in the active matrix type liquid crystal display device of this embodiment, the image quality is not deteriorated and the same effect as that of the embodiment 1 is obtained.
【００３８】［実施例３］本実施例の構成は下記の要件
を除けば実施例１と同一である。[Third Embodiment] The configuration of this embodiment is the same as that of the first embodiment except for the following requirements.
【００３９】一対の基板両方にそれぞれ配置していた電
極群をすべて一方の基板上に形成した。図７（ａ）は本
実施例におけるアクティブマトリクス型液晶表示装置の
平面図の一部である。図７（ｂ）は図７（ａ）のＡ−
Ａ′における断面図、図７(ｃ)は図７（ａ）のＢ−Ｂ′
における断面図である。アクティブ素子を形成した基板
３１上に第２の画素電極２を形成した。一般にホトマス
クのアライメント精度は相対向する２枚の基板間のアラ
イメント精度に比べて著しく高い。本実施例では４種の
電極群のいずれをも一方の基板３１上に形成することか
ら、第１の画素電極１と第２の画素電極２の間のアライ
メントがホトマスクのみで行われるため、実施例１，２
の場合に比べて両電極間のアライメントずれが小さく抑
制される。これにより本実施例では、１枚のアクティブ
マトリクス型液晶表示装置内における第１の画素電極１
と第２の画素電極２の間の静電容量のバラツキを抑える
ことができ、表示むらは全く発生しなかったまた、対向
する基板３２上には一切導電性部材は設けていない。し
たがって、本実施例の構成においては仮にアクティブマ
トリクス型液晶表示装置の製造工程中に導電性の異物が
混入したとしても一方の基板上の電極と他方の基板上の
電極の間の短絡の可能性がなく、これによる不良が発生
しなかった。The electrode groups respectively arranged on both of the pair of substrates were formed on one of the substrates. FIG. 7A is a part of a plan view of the active matrix type liquid crystal display device in this embodiment. FIG. 7B is A- of FIG.
FIG. 7C is a sectional view taken along the line A ', and FIG.
FIG. The second pixel electrode 2 was formed on the substrate 31 on which the active element was formed. Generally, the alignment accuracy of a photomask is significantly higher than the alignment accuracy between two substrates facing each other. In this embodiment, since all of the four kinds of electrode groups are formed on the one substrate 31, the alignment between the first pixel electrode 1 and the second pixel electrode 2 is performed only by the photomask. Examples 1 and 2
The misalignment between the two electrodes is suppressed to be smaller than that in the above case. Thus, in this embodiment, the first pixel electrode 1 in one active matrix type liquid crystal display device is
The variation in electrostatic capacitance between the second pixel electrode 2 and the second pixel electrode 2 can be suppressed, display unevenness does not occur at all, and no conductive member is provided on the opposing substrate 32. Therefore, in the structure of this embodiment, even if a conductive foreign substance is mixed in during the manufacturing process of the active matrix type liquid crystal display device, there is a possibility of short circuit between the electrode on one substrate and the electrode on the other substrate. And there was no defect due to this.
【００４０】本実施例においても画質劣化は発生せず、
実施例１と同様の効果が得られた。 ［実施例４］本実施例の構成は下記の要件を除けば実施
例３と同一である。Also in this embodiment, image quality deterioration does not occur,
The same effect as in Example 1 was obtained. [Embodiment 4] The configuration of this embodiment is the same as that of the embodiment 3 except for the following requirements.
【００４１】図８（ａ）は本実施例におけるアクティブ
マトリクス型液晶表示装置の平面図の一部である。図８
（ｂ）は図８（ａ）のＡ−Ａ′における断面図、図８
（ｃ）は図８（ａ）のＢ−Ｂ′における断面図である。
実施例３における第２の画素電極に、アモルファスシリ
コンからなるチャネル層１６および共通配線２２を設け
てアクティブ素子を形成して接続し、第１の画素電極１
と第２の画素電極２との間で電界７が印加される構成と
した。すなわち、本実施例においては従来のアクティブ
マトリクス型液晶表示装置における共通電極に相当する
電極は設けていない。対をなす画素電極１，２はそれぞ
れアクティブ素子に接続しているが、共通の走査配線１
０によって駆動されるため、第１の画素電極１と信号配
線１１間および第２の画素電極２と共通配線２２間はそ
れぞれ同じにオン−オフのスイチング動作をする。した
がって、実質的に第１の画素電極１と第２の画素電極
２，信号配線１１と共通配線２２はそれぞれ等価であ
り、画像信号は信号配線１１を通しても、共通配線２２
を通しても、あるいは信号配線１１と共通配線２２に振
り分けても供給することができる。FIG. 8A is a part of a plan view of the active matrix type liquid crystal display device in this embodiment. Figure 8
8B is a sectional view taken along line AA ′ in FIG.
8C is a sectional view taken along line BB ′ of FIG.
The channel layer 16 made of amorphous silicon and the common wiring 22 are provided on the second pixel electrode in the third embodiment to form and connect the active element, and the first pixel electrode 1
The electric field 7 is applied between the first pixel electrode 2 and the second pixel electrode 2. That is, in this embodiment, no electrode corresponding to the common electrode in the conventional active matrix type liquid crystal display device is provided. The pair of pixel electrodes 1 and 2 are connected to the active elements, respectively, but the common scanning wiring 1
Since the first pixel electrode 1 and the signal line 11 and between the second pixel electrode 2 and the common line 22 are driven by 0, the same on / off switching operation is performed. Therefore, the first pixel electrode 1, the second pixel electrode 2, the signal wiring 11 and the common wiring 22 are substantially equivalent to each other, and the image signal passes through the signal wiring 11 and the common wiring 22.
It can be supplied through the signal line 11 or the common line 22.
【００４２】本実施例では、液晶組成物層から見て第１
の画素電極１と第２の画素電極２は全く等価であるた
め、図８（ｃ）に示すように、第２の画素電極２につい
ても走査配線１０でゲート絶縁膜１３を挟む構造として
容量素子１２を並列接続になるように形成した。このた
め容量素子１２のサイズは実施例１，３に比べて１／２
にすることができた。したがって、光の利用効率は５
５.１％ と実施例３に比べてさらに向上することがで
き、本実施例によるアクティブマトリクス型液晶表示装
置の透過率は９.２％ になった。In this embodiment, the first liquid crystal composition layer
Since the pixel electrode 1 and the second pixel electrode 2 are completely equivalent to each other, as shown in FIG. 8C, the second pixel electrode 2 also has a structure in which the gate insulating film 13 is sandwiched between the scanning lines 10. 12 were formed in parallel. Therefore, the size of the capacitive element 12 is 1/2 that of the first and third embodiments.
I was able to Therefore, the light utilization efficiency is 5
This is 5.1%, which is an improvement over that of the third embodiment, and the transmittance of the active matrix type liquid crystal display device according to the present embodiment is 9.2%.
【００４３】本実施例においても画質劣化は発生せず、
実施例３と同様の効果が得られた。In this embodiment also, the image quality is not deteriorated,
The same effect as in Example 3 was obtained.
【００４４】[0044]
【発明の効果】以上説明したように、本発明によれば、
従来よりも液晶組成物の比抵抗が低くてもよいため、液
晶組成物や配向膜材料の選択の自由度が広がる。よっ
て、画素電極に蓄積された電荷を保持するのに十分な比
抵抗を有していれば、低い光学しきい値電圧や適切な大
きさの複屈折等を有し、かつ不純物によって汚染されに
くい液晶組成物が使用可能になる。また、液晶組成物層
の比抵抗を低下させやすい配向膜材料でも、適切なプレ
チルト角を発現し、かつ直流電荷の残留しにくい配向膜
が使用可能になる。このため、表示むらや残像などの画
質劣化を防止することができる。As described above, according to the present invention,
Since the specific resistance of the liquid crystal composition may be lower than before, the degree of freedom in selecting the liquid crystal composition and the alignment film material is expanded. Therefore, as long as it has a specific resistance sufficient to hold the charges accumulated in the pixel electrode, it has a low optical threshold voltage, birefringence of an appropriate size, etc., and is not easily contaminated by impurities. The liquid crystal composition becomes usable. Further, even with an alignment film material that easily lowers the specific resistance of the liquid crystal composition layer, it is possible to use an alignment film that exhibits an appropriate pretilt angle and is hard to retain a DC charge. Therefore, it is possible to prevent image quality deterioration such as display unevenness and afterimage.
【００４５】また、電極間の距離が大きい短冊状の画素
電極は櫛歯状電極対に比べて単純な形状であるため、光
の利用効率を向上することが可能になる。このため、液
晶表示装置の明るさを向上することができる。Further, since the strip-shaped pixel electrode having a large distance between the electrodes has a simpler shape than the comb-teeth-shaped electrode pair, the light utilization efficiency can be improved. Therefore, the brightness of the liquid crystal display device can be improved.
【００４６】さらに、液晶組成物層に横電界を効率良く
印加できるため、画素電極近傍において発生する基板界
面に垂直な方向の電界成分を横電界成分に比べて小さく
抑えることが可能になる。このため、この部分での液晶
分子の立上りによる光漏れが減少し、斜め方向から見た
コントラスト比を向上することができる。Further, since the lateral electric field can be efficiently applied to the liquid crystal composition layer, the electric field component generated in the vicinity of the pixel electrode in the direction perpendicular to the substrate interface can be suppressed smaller than the lateral electric field component. For this reason, light leakage due to rising of the liquid crystal molecules in this portion is reduced, and the contrast ratio seen from an oblique direction can be improved.
【図１】本発明の実施例１のアクティブマトリクス型液
晶表示装置の説明図。FIG. 1 is an explanatory diagram of an active matrix type liquid crystal display device according to a first embodiment of the present invention.
【図２】横電界方式の液晶表示装置における液晶分子の
動作を示す図。FIG. 2 is a diagram showing an operation of liquid crystal molecules in a horizontal electric field type liquid crystal display device.
【図３】横電界方式の液晶表示装置における電気光学特
性を示す図。FIG. 3 is a diagram showing electro-optical characteristics in a horizontal electric field type liquid crystal display device.
【図４】比較例１のアクティブマトリクス型液晶表示装
置の説明図。FIG. 4 is an explanatory diagram of an active matrix type liquid crystal display device of Comparative Example 1.
【図５】比較例２のアクティブマトリクス型液晶表示装
置の説明図。5 is an explanatory diagram of an active matrix liquid crystal display device of Comparative Example 2. FIG.
【図６】本発明の実施例２のアクティブマトリクス型液
晶表示装置の説明図。FIG. 6 is an explanatory diagram of an active matrix type liquid crystal display device according to a second embodiment of the present invention.
【図７】本発明の実施例３のアクティブマトリクス型液
晶表示装置の説明図。FIG. 7 is an explanatory diagram of an active matrix liquid crystal display device according to a third embodiment of the present invention.
【図８】本発明の実施例４のアクティブマトリクス型液
晶表示装置の説明図。FIG. 8 is an explanatory diagram of an active matrix type liquid crystal display device according to a fourth embodiment of the present invention.
１…第１の画素電極、２…第２の画素電極、２′…共通
電極、３…基板、４…配向膜、５…液晶分子、６…偏光
板、７…印加電界の方向、８…界面上の液晶分子長軸配
向方向（ラビング方向）、１０…走査配線、１１…信号
配線、１２…容量素子、１３…ゲート絶縁膜、１４，１
５…保護膜となる有機ポリマ、１６…チャネル層、１７
…カラーフィルタ、１８…遮光層、２２…共通配線、３
１，３２…基板、５０…液晶組成物層。DESCRIPTION OF SYMBOLS 1 ... 1st pixel electrode, 2 ... 2nd pixel electrode, 2 '... Common electrode, 3 ... Substrate, 4 ... Alignment film, 5 ... Liquid crystal molecule, 6 ... Polarizing plate, 7 ... Direction of applied electric field, 8 ... Liquid crystal molecule major axis orientation direction (rubbing direction) on the interface, 10 ... Scan wiring, 11 ... Signal wiring, 12 ... Capacitance element, 13 ... Gate insulating film, 14, 1.
5 ... Organic polymer serving as protective film, 16 ... Channel layer, 17
... color filter, 18 ... light-shielding layer, 22 ... common wiring, 3
1, 32 ... Substrate, 50 ... Liquid crystal composition layer.
Claims (9)
記基板間に挟持された液晶組成物層と、前記基板のいず
れか一方の基板の向き合った表面にマトリクス状に配置
された複数の走査配線および信号配線と、対をなす画素
電極と、前記画素電極および前記走査配線および信号配
線に接続されたアクティブ素子と、前記各走査配線に接
続された走査配線駆動手段と、前記各信号配線に接続さ
れた信号配線駆動手段とを備えた液晶表示装置におい
て、 前記対をなす画素電極が短冊状の形状であり、その一方
の電極の長辺方向が他方の電極の長辺方向とほぼ平行で
あって、 前記対をなす画素電極のうちの少なくとも一方の電極
と、前記走査配線との間に絶縁物を介して容量素子を形
成したことを特徴とするアクティブマトリクス型液晶表
示装置。1. A pair of substrates, at least one of which is transparent, a liquid crystal composition layer sandwiched between the substrates, and a plurality of scans arranged in a matrix on facing surfaces of one of the substrates. Wirings and signal wirings, paired pixel electrodes, active elements connected to the pixel electrodes and the scanning wirings and signal wirings, scanning wiring driving means connected to the scanning wirings, and the signal wirings. In a liquid crystal display device including a connected signal line driving unit, the pair of pixel electrodes has a strip shape, and the long side direction of one of the electrodes is substantially parallel to the long side direction of the other electrode. An active matrix type liquid crystal display device, wherein a capacitive element is formed between at least one electrode of the pair of pixel electrodes and the scanning wiring with an insulator interposed therebetween.
記基板間に挟持された液晶組成物層と、前記基板のいず
れか一方の基板の向き合った表面にマトリクス状に配置
された複数の走査配線および信号配線と、対をなす画素
電極と、前記画素電極および前記走査配線および信号配
線に接続されたアクティブ素子と、前記各走査配線に接
続された走査配線駆動手段と、前記各信号配線に接続さ
れた信号配線駆動手段とを備えた液晶表示装置におい
て、 前記対をなす画素電極が短冊状の形状であり、その一方
の電極の長辺方向が他方の電極の長辺方向とほぼ平行で
あって、 前記対をなす画素電極のうちの一方の電極を、隣接する
画素における対をなす画素電極のうちの一方の電極と接
続し、前記対をなす画素電極のうちの他方の電極との間
に絶縁物を介して容量素子を形成したことを特徴とする
アクティブマトリクス型液晶表示装置。2. A pair of substrates, at least one of which is transparent, a liquid crystal composition layer sandwiched between the substrates, and a plurality of scans arranged in a matrix on facing surfaces of one of the substrates. Wirings and signal wirings, paired pixel electrodes, active elements connected to the pixel electrodes and the scanning wirings and signal wirings, scanning wiring driving means connected to the scanning wirings, and the signal wirings. In a liquid crystal display device including a connected signal line driving unit, the pair of pixel electrodes has a strip shape, and the long side direction of one of the electrodes is substantially parallel to the long side direction of the other electrode. And connecting one electrode of the pixel electrodes forming the pair to one electrode of the pixel electrodes forming a pair in an adjacent pixel and connecting the other electrode of the pixel electrodes forming the pair. In between Active matrix liquid crystal display device characterized by the formation of the capacitor element through the object.
絶縁物を介して形成したことを特徴とする請求項１，２
記載のアクティブマトリクス型液晶表示装置。3. The capacitance element is formed through an insulator having a specific resistance of 10 10 Ωcm or more.
The active matrix liquid crystal display device described.
であることを特徴とする請求項１，２記載のアクティブ
マトリクス型液晶表示装置。4. The active matrix liquid crystal display device according to claim 1, wherein the liquid crystal composition has a specific resistance of 10 10 Ωcm or more.
誘電率の積が、前記液晶組成物の比抵抗と誘電率の積の
値以上であることを特徴とする請求項１，２記載のアク
ティブマトリクス型液晶表示装置。5. The product of the specific resistance and the dielectric constant of the insulator forming the capacitive element is equal to or larger than the product of the specific resistance and the dielectric constant of the liquid crystal composition. The active matrix liquid crystal display device described.
信号における１垂直走査期間を、前記容量素子を構成す
る絶縁物の比抵抗と誘電率の積で表わされる時定数より
も小さく設定したことを特徴とする請求項１，２記載の
アクティブマトリクス型液晶表示装置。6. A vertical scanning period in a drive signal output from the scanning wiring drive means is set to be smaller than a time constant represented by a product of a specific resistance and a dielectric constant of an insulator forming the capacitive element. The active matrix type liquid crystal display device according to claim 1 or 2.
記対をなす画素電極間の距離より短いことを特徴とする
請求項１，２記載のアクティブマトリクス型液晶表示装
置。7. The active matrix type liquid crystal display device according to claim 1, wherein the length of the short side of the pair of pixel electrodes is shorter than the distance between the pair of pixel electrodes.
れらのうちの少なくとも一つの部材の誘電率が前記液晶
組成物の誘電率よりも小さいことを特徴とする請求項
１，２記載のアクティブマトリクス型液晶表示装置。8. A non-conductive constituent member is provided in two or more, and the dielectric constant of at least one member is smaller than that of the liquid crystal composition. The active matrix liquid crystal display device described.
前記液晶組成物の誘電率よりも小さいことを特徴とする
請求項１，２記載のアクティブマトリクス型液晶表示装
置。9. The active matrix liquid crystal display device according to claim 1, wherein the dielectric constant of the member in contact with the liquid crystal composition layer is smaller than the dielectric constant of the liquid crystal composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP437894A JP3296913B2 (en) | 1993-01-20 | 1994-01-20 | Active matrix type liquid crystal display |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP735593 | 1993-01-20 | ||
| JP5-7355 | 1993-01-20 | ||
| JP437894A JP3296913B2 (en) | 1993-01-20 | 1994-01-20 | Active matrix type liquid crystal display |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002025053A Division JP3915529B2 (en) | 1993-01-20 | 2002-02-01 | Active matrix liquid crystal display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06273803A true JPH06273803A (en) | 1994-09-30 |
| JP3296913B2 JP3296913B2 (en) | 2002-07-02 |
Family
ID=26338128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP437894A Expired - Lifetime JP3296913B2 (en) | 1993-01-20 | 1994-01-20 | Active matrix type liquid crystal display |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3296913B2 (en) |
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| JP2009025834A (en) * | 1998-06-23 | 2009-02-05 | Sharp Corp | Liquid crystal display apparatus |
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