JPH0626807A - Cantilever with thin-film type displacement sensor - Google Patents
Cantilever with thin-film type displacement sensorInfo
- Publication number
- JPH0626807A JPH0626807A JP4180786A JP18078692A JPH0626807A JP H0626807 A JPH0626807 A JP H0626807A JP 4180786 A JP4180786 A JP 4180786A JP 18078692 A JP18078692 A JP 18078692A JP H0626807 A JPH0626807 A JP H0626807A
- Authority
- JP
- Japan
- Prior art keywords
- cantilever
- intermediate layer
- displacement sensor
- displacement
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006073 displacement reaction Methods 0.000 title claims abstract description 46
- 239000010409 thin film Substances 0.000 title claims abstract description 26
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 239000006104 solid solution Substances 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- 229910002113 barium titanate Inorganic materials 0.000 claims description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical group [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 28
- 239000000523 sample Substances 0.000 abstract description 21
- 230000010287 polarization Effects 0.000 abstract description 8
- 238000001514 detection method Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R17/00—Piezoelectric transducers; Electrostrictive transducers
- H04R17/04—Gramophone pick-ups using a stylus; Recorders using a stylus
- H04R17/08—Gramophone pick-ups using a stylus; Recorders using a stylus signals being recorded or played back by vibration of a stylus in two orthogonal directions simultaneously
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、カンチレバーに関する
ものであり、特に原子間力顕微鏡のカンチレバーに関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cantilever, and more particularly to an atomic force microscope cantilever.
【０００２】[0002]
【従来の技術】走査型顕微鏡のひとつである原子間力顕
微鏡（Ａtomic Ｆorce Ｍicroscope :ＡＦＭ）は、物質
間に働く力により表面の２次的な観察像を形成するもの
である。ＡＦＭは、電気伝導性のない材料表面や有機分
子をナノメートルスケールで観察できることから、広範
な応用が期待されている（山田、応用物理 第59巻第２
号 P191〜192 ）。2. Description of the Related Art An atomic force microscope (AFM), which is one of scanning microscopes, forms a secondary observation image of a surface by a force acting between substances. AFM is expected to have a wide range of applications because it can observe material surfaces without electrical conductivity and organic molecules on the nanometer scale (Yamada, Applied Physics Vol. 59, Vol. 2).
No. P191-192).
【０００３】図２に、従来のＡＦＭの原理の概念図を示
す。ＡＦＭは、先端曲率半径の小さな針状チップと可撓
性プレートとからなるカンチレバーと、可撓性プレート
のたわみ（曲がり）を測定する変位検出系から構成され
る。カンチレバーの先端の針状チップをサンプルに近づ
ける（10ｎｍ程度）と、サンプル原子と針状チップとの
間には静電気、磁気及びファンデルワールス力などが働
いて可撓性プレートがたわむ。このたわみの変位量を変
位検出系により検出することによって測定が行われる。FIG. 2 shows a conceptual diagram of the principle of a conventional AFM. The AFM is composed of a cantilever composed of a needle-shaped tip having a small tip radius of curvature and a flexible plate, and a displacement detection system for measuring the deflection (bending) of the flexible plate. When the needle tip at the tip of the cantilever is brought close to the sample (about 10 nm), static electricity, magnetism, van der Waals force, etc. act between the sample atom and the needle tip, and the flexible plate bends. The measurement is performed by detecting the displacement amount of this deflection by a displacement detection system.
【０００４】そして、サンプルを走査することによりサ
ンプル表面の力の２次元的情報が得られる。また、可撓
性プレートのたわみを一定にするように試料の位置を制
御しながらサンプルを走査することにより表面の微視的
形状を知ることができる。例えば、特開平３−218998に
は、シリコン基板およびこれと一体化した尖鋭なシリコ
ンチップとからなるカンチレバー、あるいは窒化珪素基
板と尖鋭なシリコンチップとからなるカンチレバーが記
載されている。Then, by scanning the sample, two-dimensional information on the force on the sample surface can be obtained. Further, the microscopic shape of the surface can be known by scanning the sample while controlling the position of the sample so as to keep the deflection of the flexible plate constant. For example, Japanese Patent Laid-Open No. 3-218998 describes a cantilever composed of a silicon substrate and a sharp silicon chip integrated with the silicon substrate, or a cantilever composed of a silicon nitride substrate and a sharp silicon chip.
【０００５】また、特開平１−262403には、上記のカン
チレバーの他、シリコンからなるプレートが回転する構
造のカンチレバーが記載されている。これらのカンチレ
バーのサンプル原子から受ける力によって生ずる変位を
検出する変位検出系には、トンネル検出方式、光波干渉
方式、光てこ方式が用いられていた。In addition to the above cantilever, Japanese Patent Laid-Open No. 1-262403 discloses a cantilever having a structure in which a plate made of silicon rotates. A tunnel detection method, a light wave interference method, and an optical lever method have been used as a displacement detection system for detecting the displacement caused by the force received from the sample atoms of these cantilevers.
【０００６】いずれの方法においても、カンチレバーと
変位検出系との相対変位によって針状チップの動きを測
定するため、カンチレバーに対して変位検出系が固定さ
れないと変位の読み取り誤差が大きくなる。そのため、
従来、カンチレバー、変位検出系を固定し、試料を走査
していた。しかしながら、この方式では、試料が大きく
なると機械的特性が劣化するため試料を薄く小さく加工
する必要があった。それゆえ、大型試料を観察するとき
にはカンチレバーを走査したいが、従来のＡＦＭでは、
上述のようにカンチレバーと重い変位検出系を一体にし
て走査する必要があり、特性を劣化させてしまうことか
ら逃れられなかった。In either method, since the movement of the needle-shaped tip is measured by the relative displacement between the cantilever and the displacement detection system, the displacement reading error becomes large unless the displacement detection system is fixed to the cantilever. for that reason,
Conventionally, the cantilever and the displacement detection system are fixed and the sample is scanned. However, in this method, it is necessary to process the sample thin and small because the mechanical characteristics deteriorate as the sample becomes larger. Therefore, we want to scan the cantilever when observing a large sample, but with the conventional AFM,
As described above, it is necessary to scan the cantilever and the heavy displacement detection system as one body, and this cannot be avoided because the characteristics are deteriorated.
【０００７】また、ＡＦＭは、〜 100μｍの視野しか持
たず、かつその範囲においては１フレーム数分かかり、
光学顕微鏡や電子顕微鏡のようにスムーズなファインダ
ー機能を持っていない。そして、大きな変位検出系のた
めに、上部からＮ.Ａの大きい光学顕微鏡でカンチレバ
ー、サンプルの位置合わせができないこともＡＦＭの操
作性を悪くしていた。Further, the AFM has a field of view of up to 100 μm, and in that range, it takes one frame for several minutes,
It does not have a smooth viewfinder function like an optical microscope or an electron microscope. Also, because of the large displacement detection system, it is not possible to align the cantilever and the sample with an optical microscope with a large NA from above, which also deteriorates the operability of the AFM.
【０００８】そこで、変位検出系とカンチレバーを一体
化する試みがなされている。たとえば、シリコンカンチ
レバー中にピエゾ抵抗部分を作り、これの抵抗変化で変
位を感知するピエゾ抵抗方式（International Conferen
ce on Solid-State Sensorsand Actuators 1991、予
稿、 PP448〜451 ）、カンチレバー上に微小光学系を作
り、光路長の変化による光波干渉を計測し、変位を感知
する光干渉方式（特開平２−196209）がある。Therefore, attempts have been made to integrate the displacement detection system and the cantilever. For example, a piezoresistive method is created by forming a piezoresistive part in a silicon cantilever, and detecting the displacement by the resistance change.
Ce on Solid-State Sensors and Actuators 1991, Preliminary report, PP448-451), Optical interferometry method that detects displacement by measuring a microwave optical system on a cantilever and measuring optical wave interference due to change in optical path length (JP-A-2-196209) There is.
【０００９】[0009]
【発明が解決しようとする課題】しかしながら、上述し
たような変位検出系とカンチレバーを一体化する方法で
は、カンチレバー自体の材料を変位検出系を構成する材
料とするか、あるいはカンチレバーの材料の一部を変位
検出系を構成する材料とするため、カンチレバー用の材
料が検出方式により限定されてしまうという問題があっ
た。たとえば、ピエゾ抵抗方式では、ピエゾ抵抗を得る
ためにシリコンを材料とするしかなく、光干渉方式で
は、窒化珪素、珪酸塩ガラス等の光学材料を使わなけれ
ばならない。さらに、このような材料を用いた場合に
は、カンチレバーが他の材料と複合した二重、三重の複
雑な構造になることが多い。However, in the method of integrating the displacement detecting system and the cantilever as described above, the material of the cantilever itself is used as the material constituting the displacement detecting system, or a part of the material of the cantilever is used. Since is used as the material for the displacement detection system, there is a problem that the material for the cantilever is limited by the detection method. For example, in the piezoresistive method, only silicon is used to obtain the piezoresistance, and in the optical interference method, an optical material such as silicon nitride or silicate glass must be used. Furthermore, when such a material is used, the cantilever often has a double or triple complex structure in which the cantilever is combined with another material.
【００１０】このように、カンチレバーの材料が限定さ
れることにより、素子構造が複雑化すると共に多くの制
約が生ずる。さらに、カンチレバーの作製にあたって、
複雑な製造工程が必要となり困難を伴い、実際に作製可
能であるとしても生産コスト等に問題を残すことが考え
られる。本発明はこのような従来技術の問題に鑑みて、
二酸化珪素、金属等の種々の材料で作られたカンチレバ
ーを提供することを目的とする。As described above, since the material of the cantilever is limited, the device structure becomes complicated and many restrictions occur. Furthermore, when making the cantilever,
A complicated manufacturing process is required and it is difficult. Even if it can be actually manufactured, it is considered that there will be a problem in the production cost. In view of such problems of the conventional art, the present invention is
It is an object to provide a cantilever made of various materials such as silicon dioxide and metal.
【００１１】[0011]
【課題を解決するための手段】本発明者らは、変位検出
系として薄膜型変位センサーを用いることにより、小型
化できることを着想した。そして、この薄膜型変位セン
サーをカンチレバー上に設けて一体化することにより、
大きなサンプルでもカンチレバーを走査して測定できる
こと、及びカンチレバーの材料が限定されず素子構成が
複雑化しないことを見い出し、本発明を成すに至った。The inventors of the present invention have conceived that a thin film type displacement sensor can be used as a displacement detection system to reduce the size. And by installing this thin film type displacement sensor on the cantilever and integrating it,
The inventors have found that even a large sample can be measured by scanning the cantilever, and that the material of the cantilever is not limited and the element structure is not complicated, and the present invention has been completed.
【００１２】よって本発明は、可撓性プレート及びその
先端付近に固定された針状チップからなるカンチレバー
において、前記プレート上に、下部電極、圧電または電
歪特性を持つ中間層及び上部電極からなる薄膜型変位セ
ンサーを取り付けたことを特徴とするカンチレバーを提
供するものである。Therefore, the present invention is a cantilever comprising a flexible plate and a needle-like tip fixed near the tip thereof, and comprises a lower electrode, an intermediate layer having piezoelectric or electrostrictive characteristics and an upper electrode on the plate. A cantilever provided with a thin film displacement sensor.
【００１３】[0013]
【作用】本発明では、下部電極、圧電または電歪特性を
持つ中間層、上部電極からなる薄膜型変位センサーを可
撓性プレート上に形成し、歪みによる分極電荷を感知す
るカンチレバーとしたところに特徴がある。なお、本発
明においては、ＡＦＭや走査型トンネル顕微鏡（Ｓcann
ing Ｔunnelling Ｍicroscope ：ＳＴＭ）に用いられる
カンチレバー上に薄膜型変位センサーを設けたが、本発
明の薄膜型変位センサーは、マイクロマシン等の他の微
小システムにおいても、変位センサー、歪センサー等の
変位検出系として使用することが可能である。In the present invention, a thin film type displacement sensor consisting of a lower electrode, an intermediate layer having piezoelectric or electrostrictive characteristics, and an upper electrode is formed on a flexible plate and used as a cantilever for sensing polarization charge due to strain. There are features. In addition, in the present invention, the AFM and the scanning tunneling microscope (Scann
ing Tunneling Microscope (STM), a thin film type displacement sensor is provided on a cantilever, but the thin film type displacement sensor of the present invention can be used in other micro systems such as micromachines. Can be used as.
【００１４】図１に、本発明のカンチレバーの構成の一
態様を示し、本発明の作用を説明する。探針がサンプル
原子から斥力あるいは引力を受けることによりカンチレ
バーが屈曲する。圧電または電歪の特性を持った材料か
らなる薄膜が可撓性プレート内で最大の応力を生ずるプ
レートの根本部分表面に上・下部電極と共に形成され、
探針の変位に伴い最大の変位を受けるようになる。図１
では可撓性プレートの上部表面に圧電・電歪材料からな
る薄膜型変位センサーを形成してあるが、下部表面に形
成しても同じ効果が得られる。中間層として圧電材料を
使用した場合、薄膜形状であるため、上・下電極を使っ
て簡単にポーリングでき、このポーリング方向と垂直と
なる方向の可撓性プレートの屈曲に伴い分極電荷が中間
層の表面に生ずる（圧電定数ｄ31で示される現象）。電
歪材料を中間層として用いた場合にも同様にして分極が
生ずる。この分極電荷を電極を通して計測することによ
り、探針（針状チップ）の変位量を知ることができる。FIG. 1 shows one embodiment of the structure of the cantilever of the present invention, and the operation of the present invention will be described. The cantilever bends when the probe receives repulsive force or attractive force from the sample atom. A thin film made of a material with piezoelectric or electrostrictive properties is formed with the upper and lower electrodes on the surface of the root part of the plate that produces the maximum stress in the flexible plate,
The maximum displacement comes with the displacement of the probe. Figure 1
In the above, a thin film type displacement sensor made of a piezoelectric / electrostrictive material is formed on the upper surface of the flexible plate, but the same effect can be obtained by forming it on the lower surface. When a piezoelectric material is used as the intermediate layer, it has a thin film shape, so it can be easily poled by using the upper and lower electrodes. As the flexible plate bends in a direction perpendicular to this poling direction, the polarization charge is generated in the intermediate layer. Occurs on the surface of (the phenomenon indicated by the piezoelectric constant d 31 ). Polarization occurs similarly when an electrostrictive material is used as the intermediate layer. By measuring this polarized charge through the electrode, the amount of displacement of the probe (needle-shaped tip) can be known.
【００１５】このような変位センサーの能力を最大限に
生かすには、高い圧電定数あるいは電歪定数を持った材
料を使うことが望ましく、チタン酸ジルコニウム酸塩−
酸化ランタン固溶体、ニオブ酸マグネシウム酸鉛−チタ
ン酸鉛固溶体は、それぞれの代表的材料である。さら
に、圧電材料であるチタン酸バリウムも変位センサーの
中間層の材料として優れている。また、下部電極には薄
膜形成時の熱処理に耐えること、カンチレバー材料と強
固に結合することなどが要求されるため、白金を主材料
とし、さらにこれら２つの条件に関して特性を向上させ
るため、チタンあるいはタンタルを白金と共に用いるの
が望ましい。このような微小な薄膜型変位センサーは、
可撓性プレートの材料の如何によらずプレート上に形成
することができる。In order to maximize the performance of such displacement sensor, it is desirable to use a material having a high piezoelectric constant or electrostriction constant.
A lanthanum oxide solid solution and a lead magnesium niobate-lead titanate solid solution are representative materials of each. Further, barium titanate, which is a piezoelectric material, is also excellent as a material for the intermediate layer of the displacement sensor. In addition, since the lower electrode is required to withstand the heat treatment during thin film formation and to be strongly bonded to the cantilever material, platinum is used as the main material, and titanium or titanium is used to improve the characteristics with respect to these two conditions. It is desirable to use tantalum with platinum. Such a small thin film displacement sensor
It can be formed on the plate regardless of the material of the flexible plate.
【００１６】[0016]
【実施例１】図１に示すような構成で、以下に示す作製
方法により可撓性プレートを二酸化珪素、薄膜型変位セ
ンサーの中間層をチタン酸ジルコニウム酸鉛を使って作
製する。 〔カンチレバーの作製〕二酸化珪素でできたカンチレバ
ーは、微細加工とSiの異方性エッチングを利用した従来
の方法（たとえば、T.R.Albrecht and C.F.Quate : J.A
ppl.Phys 62, 2599 ）により作製した。 〔薄膜型変位センサーの作製〕上記カンチレバー上に、
真空槽中において常温でAr−酸素混合ガス（９：１）圧
力２×10-3Torrにおいて、まず金属タンタルをターゲッ
トとするスパッタリング法により50Å程度のタンタル緩
衝層を形成し、さらに白金をターゲットとして同様の条
件下で5000Å程度の白金電極層を形成する。次に、真空
槽中、酸素ガス圧力10-4Torr以下においてチタン酸ジル
コニウム酸鉛焼結体をターゲットとするスパッタリング
法により白金電極上に１μｍの中間圧電層を形成する。
最後に、酸素ガス圧力10-5Torr以下において、蒸着法に
より上部電極となる金薄膜を形成する。Example 1 With the structure shown in FIG. 1, a flexible plate is manufactured using silicon dioxide and an intermediate layer of a thin film type displacement sensor is manufactured using lead zirconate titanate by the following manufacturing method. [Manufacture of cantilevers] Cantilevers made of silicon dioxide are manufactured by conventional methods using microfabrication and anisotropic etching of Si (for example, TRAlbrecht and CFQuate: JA
ppl.Phys 62, 2599). [Fabrication of thin film displacement sensor] On the above cantilever,
At room temperature in a vacuum chamber, at an Ar-oxygen mixed gas (9: 1) pressure of 2 × 10 -3 Torr, a tantalum buffer layer of about 50Å is first formed by a sputtering method using metallic tantalum as a target, and platinum is used as a target. Under the same conditions, a platinum electrode layer of about 5000Å is formed. Next, in a vacuum chamber, a 1 μm intermediate piezoelectric layer is formed on a platinum electrode by a sputtering method using a lead zirconate titanate sintered body as a target under an oxygen gas pressure of 10 −4 Torr or less.
Finally, under an oxygen gas pressure of 10 −5 Torr or less, a gold thin film to be the upper electrode is formed by a vapor deposition method.
【００１７】この後、金薄膜上にレジスト膜を形成し、
露光装置により露光、現像を行ないセンサー形成部以外
のレジスト膜を除去する。続いて加速電圧 500Ｖ、入射
角０度、イオン電流密度１ｍＡ／ｃｍ2 の条件でアルゴ
ンガスによるエッチングを行ない、上、下部電極、及び
中間圧電層を除去する。最後に、残りのレジスト膜を除
去し、図１に示した薄膜変位センサーを設けたカンチレ
バーを得る。リード線は、図１には示していないが、ア
ルミ等の金属を使い、通常の方法で行なう。After that, a resist film is formed on the gold thin film,
Exposure and development are performed by an exposure device to remove the resist film other than the sensor forming portion. Subsequently, etching with argon gas is performed under the conditions of an acceleration voltage of 500 V, an incident angle of 0 degrees, and an ion current density of 1 mA / cm 2 , to remove the upper and lower electrodes and the intermediate piezoelectric layer. Finally, the remaining resist film is removed to obtain the cantilever provided with the thin film displacement sensor shown in FIG. Although not shown in FIG. 1, the lead wire is made by a usual method using a metal such as aluminum.
【００１８】カンチレバーの形状は、長さ（ｌ1 ） 100
μｍ、幅（ｗ1 ）20μｍ、厚さ（ｔ 1 ）２μｍである。
圧電薄膜の形状は、長さ（ｌ2 ）10μｍ、幅（ｗ2 ）20
μｍ、厚さ（ｔ2 ）１μｍとし、探針先端の変位（ｄ）
が１ｎｍとすると、強誘電薄膜部に生ずる応力（σ）は
概算として、The shape of the cantilever is the length (l1) 100
μm, width (w1) 20 μm, thickness (t 1) 2 μm.
The shape of the piezoelectric thin film is the length (l2) 10 μm, width (w2) 20
μm, thickness (t2) Displacement of the tip of the probe with 1 μm (d)
Is 1 nm, the stress (σ) generated in the ferroelectric thin film is
As an approximation,
【００１９】[0019]
【数１】 [Equation 1]
【００２０】で与えられ、これに対してGiven by
【００２１】[0021]
【数２】 [Equation 2]
【００２２】で示される分極電荷が生ずる。ここで、Ｅ
はシリコン上に成膜された二酸化珪素膜のヤング率、ｄ
31はチタン酸ジルコニウム酸鉛の３１で示される横振動
方向の圧電定数である。この分極電荷は、材料定数であ
るＥとｄ31によって変化はするものの、強誘電薄膜の両
電極間に約１ｍＶの電位差を与える。この誘起電圧に対
して音波診断用のソナー等に使われる通常の信号処理を
行えば、変位量を得ることが出来る。A polarization charge represented by is generated. Where E
Is the Young's modulus of the silicon dioxide film formed on silicon, d
Reference numeral 31 is a piezoelectric constant in the lateral vibration direction indicated by 31 of lead zirconate titanate. Although this polarization charge changes depending on the material constants E and d 31 , it gives a potential difference of about 1 mV between both electrodes of the ferroelectric thin film. The displacement amount can be obtained by subjecting the induced voltage to normal signal processing used in a sonar for sound wave diagnosis or the like.
【００２３】図１に示されるように、本発明の薄膜型変
位センサーは非常に簡単な構成を持っており、センサー
部自体がカンチレバーあるいはカンチレバーの一部とな
る必要がないため、本実施例で示した酸化珪素薄膜で作
られた可撓性プレートのみならず、種々の材料で作られ
た可撓性プレートにのせて変位センサとして使用するこ
とができる。As shown in FIG. 1, the thin-film displacement sensor of the present invention has a very simple structure, and the sensor portion itself does not have to be a cantilever or a part of the cantilever, so that in this embodiment. Not only the flexible plate made of the silicon oxide thin film shown, but also a flexible plate made of various materials can be used as a displacement sensor.
【００２４】[0024]
【発明の効果】以上のように、本発明によれば、どのよ
うな材料でできたカンチレバーに対してもこれと一体化
した変位センサーを設けることができる。特に、本発明
を原子間力顕微鏡に適用した場合、力検出カンチレバー
上方空間が光源および光検出部から開放されることか
ら、力検出カンチレバーと被測定物との位置合わせが極
めて容易となり、操作性を向上させる上、光学顕微鏡に
よる被測定物の観察を可能にする。As described above, according to the present invention, a displacement sensor integrated with a cantilever made of any material can be provided. In particular, when the present invention is applied to an atomic force microscope, since the space above the force detection cantilever is opened from the light source and the light detection unit, the alignment between the force detection cantilever and the object to be measured becomes extremely easy, and operability is improved. In addition to improving the measurement result, the object to be measured can be observed with an optical microscope.
【図１】 本発明に係るカンチレバーの断面概略図であ
る。FIG. 1 is a schematic sectional view of a cantilever according to the present invention.
【図２】 従来のＡＦＭの原理の概念図である。FIG. 2 is a conceptual diagram of the principle of a conventional AFM.
Claims (5)
れた針状チップとからなるカンチレバーにおいて、前記
可撓性プレート上に、下部電極、圧電または電歪特性を
持つ中間層、及び上部電極からなる薄膜型変位センサー
を取りつけたことを特徴とするカンチレバー。1. A cantilever comprising a flexible plate and a needle-shaped tip fixed near the tip thereof, wherein a lower electrode, an intermediate layer having piezoelectric or electrostrictive characteristics, and an upper electrode are provided on the flexible plate. A cantilever that is equipped with a thin film displacement sensor consisting of.
前記中間層がチタン酸ジルコニウム酸鉛−酸化ランタン
固溶体であることを特徴とするカンチレバー。2. A cantilever according to claim 1, wherein
A cantilever wherein the intermediate layer is a lead zirconate titanate-lanthanum oxide solid solution.
前記中間層がニオブ酸マグネシウム酸鉛−チタン酸鉛固
溶体であることを特徴とするカンチレバー。3. A cantilever according to claim 1,
A cantilever characterized in that the intermediate layer is a lead magnesium niobate-lead titanate solid solution.
前記中間層がチタン酸バリウムであることを特徴とする
カンチレバー。4. The cantilever according to claim 1,
A cantilever characterized in that the intermediate layer is barium titanate.
前記下部電極が白金とチタン、あるいは白金とタンタル
で構成されることを特徴とするカンチレバー。5. The cantilever according to claim 1,
A cantilever characterized in that the lower electrode is composed of platinum and titanium, or platinum and tantalum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18078692A JP3240692B2 (en) | 1992-07-08 | 1992-07-08 | Cantilever with thin film displacement sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18078692A JP3240692B2 (en) | 1992-07-08 | 1992-07-08 | Cantilever with thin film displacement sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0626807A true JPH0626807A (en) | 1994-02-04 |
| JP3240692B2 JP3240692B2 (en) | 2001-12-17 |
Family
ID=16089304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18078692A Expired - Fee Related JP3240692B2 (en) | 1992-07-08 | 1992-07-08 | Cantilever with thin film displacement sensor |
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| Country | Link |
|---|---|
| JP (1) | JP3240692B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5717132A (en) * | 1995-04-26 | 1998-02-10 | Nikon Corporation | Cantilever and process for fabricating it |
| US5723775A (en) * | 1995-07-05 | 1998-03-03 | Nikon Corporation | Atomic force microscope under high speed feedback control |
| CN1083014C (en) * | 1999-01-18 | 2002-04-17 | 日矿金属株式会社 | Rolled copper foil for flexible PCB and its manufacturing method |
| CN114923405A (en) * | 2022-04-09 | 2022-08-19 | 南昌大学 | Device and method for detecting flexoelectric effect of film by Van der Waals epitaxial method |
| US11793083B2 (en) | 2017-07-07 | 2023-10-17 | Daikin Industries, Ltd. | Vibration sensor and piezoelectric element |
-
1992
- 1992-07-08 JP JP18078692A patent/JP3240692B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5717132A (en) * | 1995-04-26 | 1998-02-10 | Nikon Corporation | Cantilever and process for fabricating it |
| US5723775A (en) * | 1995-07-05 | 1998-03-03 | Nikon Corporation | Atomic force microscope under high speed feedback control |
| CN1083014C (en) * | 1999-01-18 | 2002-04-17 | 日矿金属株式会社 | Rolled copper foil for flexible PCB and its manufacturing method |
| US11793083B2 (en) | 2017-07-07 | 2023-10-17 | Daikin Industries, Ltd. | Vibration sensor and piezoelectric element |
| CN114923405A (en) * | 2022-04-09 | 2022-08-19 | 南昌大学 | Device and method for detecting flexoelectric effect of film by Van der Waals epitaxial method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3240692B2 (en) | 2001-12-17 |
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