JPH06260468A - Semiconductor substrate cleaning device - Google Patents
Semiconductor substrate cleaning deviceInfo
- Publication number
- JPH06260468A JPH06260468A JP7275593A JP7275593A JPH06260468A JP H06260468 A JPH06260468 A JP H06260468A JP 7275593 A JP7275593 A JP 7275593A JP 7275593 A JP7275593 A JP 7275593A JP H06260468 A JPH06260468 A JP H06260468A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- cleaning liquid
- semiconductor substrate
- cleaning solution
- ports
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体基板表面を液
体で洗浄する構成の半導体基板洗浄装置に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor substrate cleaning apparatus having a structure for cleaning the surface of a semiconductor substrate with a liquid.
【０００２】[0002]
【従来の技術】従来の一般的な洗浄装置を図９〜１２を
参照して説明する。図９は従来の洗浄用治具１に多数の
半導体基板２を積載した状態を示す平面図、図１０はそ
の横断面図、図１１は治具１を設置した従来の洗浄装置
４を示す断面図、図１２は基板間における洗浄液の速度
分布を示す図である。2. Description of the Related Art A conventional general cleaning apparatus will be described with reference to FIGS. FIG. 9 is a plan view showing a state in which a large number of semiconductor substrates 2 are loaded on a conventional cleaning jig 1, FIG. 10 is a transverse sectional view thereof, and FIG. 11 is a sectional view showing a conventional cleaning device 4 in which the jig 1 is installed. FIG. 12 and FIG. 12 are views showing the velocity distribution of the cleaning liquid between the substrates.
【０００３】半導体基板の洗浄は、化学処理工程で用い
た薬液及び、基板の表面に付着した固体微粒子（シリコ
ン屑等）を除去するために行われる。従来の洗浄用治具
１は図９，１０に示すように多数の溝３を有していて、
各溝３内に半導体基板２を挿入して積載する構成になっ
ている。基板を積載した洗浄用治具１は、図１１に示す
ように洗浄装置４の所定位置に設定される。洗浄液は矢
印で示したように下方から供給され、装置４の上部から
排出される。従って、洗浄液は上に向って基板表面にほ
ぼ平行に流れることになる。The cleaning of the semiconductor substrate is carried out in order to remove the chemical solution used in the chemical treatment step and the solid fine particles (silicon scrap etc.) attached to the surface of the substrate. The conventional cleaning jig 1 has a large number of grooves 3 as shown in FIGS.
The semiconductor substrate 2 is inserted and loaded in each groove 3. The cleaning jig 1 on which the substrates are loaded is set at a predetermined position of the cleaning device 4 as shown in FIG. The cleaning liquid is supplied from below as shown by the arrow and discharged from the upper part of the device 4. Therefore, the cleaning liquid flows upward and substantially parallel to the substrate surface.
【０００４】[0004]
【発明が解決しようとする課題】一般に洗浄の良否は洗
浄液自体の性能、被洗浄面を通過する洗浄液の量や流
速、洗浄時間、さらに洗浄温度等によって左右される。
また付着した固体微粒子の除去に関しては、特に基板面
と平行に推力を与えることが重要である。Generally, the quality of cleaning depends on the performance of the cleaning liquid itself, the amount and flow rate of the cleaning liquid passing through the surface to be cleaned, the cleaning time, the cleaning temperature and the like.
Further, it is important to apply a thrust force in parallel with the surface of the substrate for removing the adhered solid fine particles.
【０００５】図１２に示された被洗浄面５，５の間の洗
浄液の速度分布をみると、洗浄液の流速は中央部で最も
速く、被洗浄面では張力（摩擦力）によって最も遅くな
っている。また、洗浄液の中央部の流れと被洗浄面付近
の流れは余り混合しない。従って、流速の早い中央部付
近の洗浄液の流れは、実質的に殆ど洗浄作用を行なわず
に排出されてしまう。一方、被洗浄面付近の流れは遅い
ため、一旦除去された付着物が基板上の他の地点に再付
着してしまう恐れもある。Looking at the velocity distribution of the cleaning liquid between the surfaces 5 and 5 to be cleaned shown in FIG. 12, the flow velocity of the cleaning liquid is the highest in the central portion and the lowest on the surface to be cleaned due to the tension (friction force). There is. Further, the flow of the cleaning liquid in the central portion and the flow in the vicinity of the surface to be cleaned do not mix so much. Therefore, the flow of the cleaning liquid near the central portion where the flow velocity is high is discharged with substantially no cleaning action. On the other hand, since the flow in the vicinity of the surface to be cleaned is slow, there is a possibility that the adhered matter once removed may re-adhere to other points on the substrate.
【０００６】洗浄液の供給量を増やすことによって、被
洗浄面付近の流れをある程度速め、かつ、中央部を流れ
る洗浄液と周辺部を流れる洗浄液をある程度混合させる
ことができるが、この方法では洗浄効率を十分に良くす
ることはできない。それどころか、流量の増大で基板に
も推力が作用し基板自体が流出して破損する恐れも出て
くる。また、この方法では多量の洗浄液が必要となり、
その処理コストの増大も問題となる。By increasing the supply amount of the cleaning liquid, the flow in the vicinity of the surface to be cleaned can be accelerated to some extent and the cleaning liquid flowing in the central portion and the cleaning liquid flowing in the peripheral portion can be mixed to some extent, but this method improves the cleaning efficiency. You can't get good enough. On the contrary, the increase in the flow rate causes the thrust to act on the substrate, which may cause the substrate itself to flow out and be damaged. Also, this method requires a large amount of cleaning liquid,
The increase in the processing cost is also a problem.
【０００７】本発明は、このような従来技術の問題点を
解消し、洗浄液の利用効率が良く、優れた洗浄能力を備
えた半導体基板洗浄装置を提供することを目的としてい
る。An object of the present invention is to solve the problems of the prior art and to provide a semiconductor substrate cleaning apparatus having good cleaning liquid utilization efficiency and excellent cleaning ability.
【０００８】[0008]
【課題を解決するための手段】この発明は、半導体基板
表面を洗浄液で洗浄する構成の半導体基板洗浄装置にお
いて、複数の洗浄液供給口１１，２１，３１，４１，５
１，６１を設け、半導体基板表面に対して実質的に４５
〜９０度の角度で洗浄液を供給する構成にし、洗浄液供
給口１１，２１，３１，４１，５１，６１の近傍に洗浄
液を回収するための洗浄液回収口１２，２２，３２，４
２，５２，６２を設けたことを特徴とする半導体基板洗
浄装置を要旨としている。SUMMARY OF THE INVENTION The present invention is a semiconductor substrate cleaning apparatus configured to clean the surface of a semiconductor substrate with a cleaning liquid, and a plurality of cleaning liquid supply ports 11, 21, 31, 41, 5 are provided.
1, 61 are provided, and substantially 45 with respect to the surface of the semiconductor substrate.
Cleaning liquid recovery ports 12, 22, 32, 4 for recovering the cleaning liquid in the vicinity of the cleaning liquid supply ports 11, 21, 31, 41, 51, 61 are configured to supply the cleaning liquid at an angle of 90 degrees.
The gist of the present invention is a semiconductor substrate cleaning apparatus characterized in that 2, 52, 62 are provided.
【０００９】[0009]
【実施例】以下、図面を参照して本発明による半導体基
板洗浄装置の実施例を説明する。Embodiments of the semiconductor substrate cleaning apparatus according to the present invention will be described below with reference to the drawings.
【００１０】まず、図１を参照して本発明の洗浄装置の
基本原理を述べる。ベース板１５には貫通穴が形成され
ており、その穴には同心的にノズル１４ａが挿入されて
いる。ノズル１４ａはノズル体１４から下方に突出して
いる。ノズル１４ａ外周とベース板の貫通穴内周の間に
は所定幅のリング状ギャップが形成されていて、このギ
ャップが洗浄液供給口１１となる。一方、ノズル１４ａ
の先端開口は洗浄液回収口１２となる。このように供給
口１１の近くに回収口１２を設けることが重要である。
この構造は、例えば、洗浄供給口１１を形成するベース
板１５とノズル１４ａのうち一方（ここではノズル１４
ａ）の部材の他側壁部を洗浄液回収口１２の形成部とす
ることにより達成される。すなわち、１つの部材の少な
くとも一つの側壁をはさんで洗浄液の供給口及び回収口
が隣接し、形成される構造である。First, the basic principle of the cleaning apparatus of the present invention will be described with reference to FIG. Through holes are formed in the base plate 15, and the nozzles 14a are concentrically inserted into the holes. The nozzle 14a projects downward from the nozzle body 14. A ring-shaped gap having a predetermined width is formed between the outer periphery of the nozzle 14a and the inner periphery of the through hole of the base plate, and this gap serves as the cleaning liquid supply port 11. On the other hand, the nozzle 14a
The tip opening of the is the cleaning liquid recovery port 12. As described above, it is important to provide the recovery port 12 near the supply port 11.
This structure is, for example, one of the base plate 15 forming the cleaning supply port 11 and the nozzle 14a (here, the nozzle 14
This is achieved by using the other side wall portion of the member a) as a portion where the cleaning liquid recovery port 12 is formed. That is, it has a structure in which the supply port and the recovery port for the cleaning liquid are formed adjacent to each other across at least one side wall of one member.
【００１１】ノズル体１４の上方には蓋体１３が配置し
てあり、ノズル体１４上面と蓋体１３下面との間には回
収通路１７が形成されている。ノズル体１４の下側平板
状部分とベース板上面との間には供給通路１６が形成さ
れている。供給通路１６及び回収通路１７は供給装置及
び回収装置（共に図示せず）に接続されている。供給装
置と回収装置はそれぞれ必要に応じて洗浄液用のタンク
やポンプ等を備えている。A lid 13 is arranged above the nozzle body 14, and a recovery passage 17 is formed between the upper surface of the nozzle body 14 and the lower surface of the lid body 13. A supply passage 16 is formed between the lower flat plate-shaped portion of the nozzle body 14 and the upper surface of the base plate. The supply passage 16 and the recovery passage 17 are connected to a supply device and a recovery device (both not shown). The supply device and the recovery device are each equipped with a tank for the cleaning liquid, a pump, and the like, as required.
【００１２】洗浄液は、供給口１１を出て実質的に９０
度の角度で半導体基板２の被洗浄面２ａに向って放出さ
れる。ノズルの先端部と被洗浄面２ａの間の間隙をオリ
フィスとして調整することによって、洗浄液の流量及び
流速を調整することができる。被洗浄面２ａを洗浄した
洗浄液は回収口１２から回収される。なお図１には洗浄
液の大体の流れが矢印で示してある（以下、同様）。The cleaning liquid exits the supply port 11 and substantially 90
It is discharged toward the surface to be cleaned 2a of the semiconductor substrate 2 at an angle of degrees. By adjusting the gap between the tip of the nozzle and the surface to be cleaned 2a as an orifice, the flow rate and flow velocity of the cleaning liquid can be adjusted. The cleaning liquid that has cleaned the surface to be cleaned 2 a is recovered from the recovery port 12. It should be noted that in FIG. 1, the general flow of the cleaning liquid is indicated by arrows (the same applies hereinafter).
【００１３】図２は本発明の洗浄装置２０を示す断面図
であり、図１と同様の供給口２１及び回収口２２が連続
的に配置されている。ベース板２５には多数の貫通穴が
設けてあり、各貫通穴にはノズル体から突出したノズル
２４ａが挿入されている。供給口２１から供給された洗
浄液は、被洗浄面２ａにほぼ９０度の角度で供給され、
被洗浄面で方向を転じて面に平行に総ての方向に進もう
とする。ベース板２５の穴とノズル２４ａの配置の仕方
を調整することによって洗浄液の流れを適当に制御する
ことが可能となる。洗浄液はノズル体２４のノズル穴す
なわち回収口２２から回収される。FIG. 2 is a sectional view showing a cleaning device 20 of the present invention, in which a supply port 21 and a recovery port 22 similar to those in FIG. 1 are continuously arranged. A large number of through holes are provided in the base plate 25, and the nozzles 24a protruding from the nozzle body are inserted into the respective through holes. The cleaning liquid supplied from the supply port 21 is supplied to the surface to be cleaned 2a at an angle of approximately 90 degrees,
Attempts to change direction on the surface to be cleaned and proceed in all directions parallel to the surface. The flow of the cleaning liquid can be appropriately controlled by adjusting the arrangement of the holes in the base plate 25 and the nozzles 24a. The cleaning liquid is recovered from the nozzle hole of the nozzle body 24, that is, the recovery port 22.
【００１４】図３には基板の両面を同時に洗浄できる洗
浄装置３０が示してある。図１，２に示したものと同様
の供給口３１及び回収口３２を基板の両側に対称に配置
することによって、両面を同時に洗浄することができ
る。もちろん、非対称な配置でもよい。洗浄装置３０を
全体的に傾斜させて洗浄を行えば、基板２は重力によっ
て自動的に移動する。FIG. 3 shows a cleaning device 30 capable of cleaning both sides of the substrate at the same time. By arranging the supply port 31 and the recovery port 32 similar to those shown in FIGS. 1 and 2 symmetrically on both sides of the substrate, both sides can be cleaned simultaneously. Of course, an asymmetrical arrangement is also possible. When the cleaning device 30 is tilted as a whole to perform cleaning, the substrate 2 automatically moves due to gravity.
【００１５】図４の洗浄装置４０は、図３の装置の変形
例であり、各ノズルに所定の傾斜が与えてある。良好な
洗浄効率を得るためには、傾斜角は４５〜９０度に設定
するのが好ましい。より好ましくは６０〜９０度に設定
する。この傾斜角の下限の限定理由は、これに満たない
角度であると、後述の本願特有の効果が充分に得られな
いためである。また、より好ましい角度の限定理由は、
この範囲により上記効果がより優れたものとなるからで
ある。この実施例では、装置を水平に保ったままでも、
洗浄液の作用により自動的に基板２を矢印の方向に移送
することができる。The cleaning device 40 of FIG. 4 is a modification of the device of FIG. 3, and each nozzle is provided with a predetermined inclination. In order to obtain good cleaning efficiency, the inclination angle is preferably set to 45 to 90 degrees. More preferably, it is set to 60 to 90 degrees. The reason for limiting the lower limit of the inclination angle is that if the angle is less than this, the effect unique to the present application, which will be described later, cannot be sufficiently obtained. Further, the reason for limiting the more preferable angle is
This is because the above-mentioned effect becomes more excellent in this range. In this example, even with the device held horizontal,
The substrate 2 can be automatically transferred in the direction of the arrow by the action of the cleaning liquid.
【００１６】図５は、図３の洗浄装置と同形式の洗浄装
置５０を全体的に示す断面図、図６はその前面図であ
る。図６から解るように、基板２は装置５０の真中を通
過し、両面が同時に洗浄される。洗浄液の供給口５１は
前述の実施例と同様にリング形状をしていて、その中央
に円形の回収口５２が配置されている。供給口５１と回
収口５２の配置密度は、半導体基板（２）一枚の片面に
つきそれぞれ２０個前後に設定してある。この配置密度
は１０〜３０個程度が望ましい。供給口５１と回収口５
２は、装置の特定の部分で滞流が生じないように配置さ
れている。なお、基板の洗浄後に、洗浄液のかわりに乾
燥空気を供給すれば基板の乾燥も行うことができる。FIG. 5 is an overall sectional view of a cleaning device 50 of the same type as the cleaning device of FIG. 3, and FIG. 6 is a front view thereof. As can be seen in FIG. 6, the substrate 2 passes through the middle of the device 50 and both sides are cleaned simultaneously. The cleaning liquid supply port 51 has a ring shape as in the above-described embodiment, and a circular recovery port 52 is arranged in the center thereof. The arrangement density of the supply ports 51 and the recovery ports 52 is set to about 20 each on one side of one semiconductor substrate (2). It is desirable that the arrangement density is about 10 to 30 pieces. Supply port 51 and recovery port 5
2 is arranged so that no stagnation occurs in a specific part of the device. After cleaning the substrate, the substrate can be dried by supplying dry air instead of the cleaning liquid.
【００１７】図７，８は図５，６に示した洗浄装置の変
形例である。この洗浄装置６０では、洗浄液供給口６１
及び回収口６２がスリット状に形成され、これらが交互
に配置されている。スリット状の供給口６１及び回収口
６２の端部付近には、洗浄液を供給及び回収するための
供給通路及び回収通路が接続されている。洗浄液は、ノ
ズル体６４のスリット状ノズルから基板２に対してほぼ
９０度の角度で供給される。洗浄液は基板２を洗浄した
後で向きを変え、供給口６１の両側の回収口６２から回
収される。スリット状ノズルは、図４に示した例のよう
に、ノズル軸を傾斜させて設けてもよい。その場合には
基板を自動的に移送することができる。FIGS. 7 and 8 are modifications of the cleaning device shown in FIGS. In the cleaning device 60, the cleaning liquid supply port 61
And the recovery port 62 is formed in a slit shape, and these are arranged alternately. Near the ends of the slit-shaped supply port 61 and the recovery port 62, a supply passage and a recovery passage for supplying and recovering the cleaning liquid are connected. The cleaning liquid is supplied from the slit-shaped nozzle of the nozzle body 64 to the substrate 2 at an angle of approximately 90 degrees. After cleaning the substrate 2, the cleaning liquid changes its direction and is recovered from the recovery ports 62 on both sides of the supply port 61. The slit-shaped nozzle may be provided by inclining the nozzle axis as in the example shown in FIG. In that case, the substrate can be automatically transferred.
【００１８】[0018]
【発明の効果】本発明の半導体基板洗浄装置は、複数の
洗浄液供給口１１〜６１を設け、半導体基板表面に対し
て実質的に４５〜９０度の角度で洗浄液を供給する構成
にし、洗浄液供給口１１〜６１の近傍に洗浄液を回収す
るための洗浄液回収口１２〜６２を設けたことを特徴と
するので次の効果を得ることができる。According to the semiconductor substrate cleaning apparatus of the present invention, a plurality of cleaning liquid supply ports 11 to 61 are provided, and the cleaning liquid is supplied at an angle of substantially 45 to 90 degrees with respect to the surface of the semiconductor substrate. Since the cleaning liquid recovery ports 12 to 62 for recovering the cleaning liquid are provided in the vicinity of the ports 11 to 61, the following effects can be obtained.
【００１９】１）被洗浄面における洗浄液の流速及び水
圧が大きくなり、半導体基板に付着したシリコン屑等の
固体微粒子又は他の汚れを効果的に除去できる。1) The flow velocity and water pressure of the cleaning liquid on the surface to be cleaned are increased, and solid fine particles such as silicon chips or other contaminants adhering to the semiconductor substrate can be effectively removed.
【００２０】２）１）で述べたように洗浄効果が大きく
なるので、洗浄液の使用量を少なくすると共に洗浄時間
も大幅に短縮することができる。2) Since the cleaning effect is enhanced as described in 1), the amount of cleaning liquid used can be reduced and the cleaning time can be greatly shortened.
【００２１】３）洗浄液が局部的に回収される構造にな
っているので、被洗浄物の再付着が起り難い。3) Since the cleaning liquid is locally collected, re-adhesion of the object to be cleaned hardly occurs.
【００２２】さらに、本発明の洗浄装置は密閉構造に構
成できるが、その場合には装置周辺からの汚染を防止す
ることができる。また、半導体基板を次々と連続的に洗
浄可能な構成にすることもできる。Further, the cleaning device of the present invention can be constructed in a closed structure, but in that case, contamination from the periphery of the device can be prevented. Further, the semiconductor substrate may be configured to be continuously and successively washable.
【００２３】なお、本発明は前述の実施例に限定されな
い。例えば、前述の実施例で供給口と回収口の役割を交
換して洗浄液の流れを逆にすることもできる。また、供
給口や回収口の形状は円形やリング形以外の任意の形を
採用でき、その大きさや配置も様々に変形可能である。The present invention is not limited to the above embodiment. For example, in the above-described embodiment, the roles of the supply port and the recovery port can be exchanged and the flow of the cleaning liquid can be reversed. Further, the shape of the supply port and the recovery port can be any shape other than a circular shape or a ring shape, and the size and arrangement thereof can be variously modified.
【図１】本発明の半導体基板洗浄装置の基本原理を説明
するための断面図。FIG. 1 is a sectional view for explaining the basic principle of a semiconductor substrate cleaning apparatus of the present invention.
【図２】本発明による半導体基板洗浄装置の実施例の一
部を示す断面図。FIG. 2 is a sectional view showing a part of an embodiment of a semiconductor substrate cleaning apparatus according to the present invention.
【図３】本発明の他の実施例を示す断面図。FIG. 3 is a sectional view showing another embodiment of the present invention.
【図４】図３の洗浄装置の変形例を示す断面図。FIG. 4 is a cross-sectional view showing a modified example of the cleaning device of FIG.
【図５】図３の実施例と同形式の装置の全体的構成を示
す図。5 is a diagram showing the overall configuration of an apparatus of the same type as that of the embodiment of FIG.
【図６】図５の洗浄装置の前面図。6 is a front view of the cleaning apparatus of FIG.
【図７】本発明のさらに他の実施例を示す断面図。FIG. 7 is a sectional view showing still another embodiment of the present invention.
【図８】図７の洗浄装置の全体的構成を示す図。FIG. 8 is a diagram showing an overall configuration of the cleaning apparatus of FIG.
【図９】従来の洗浄用治具を示す平面図。FIG. 9 is a plan view showing a conventional cleaning jig.
【図１０】図９の洗浄用治具の断面図。10 is a cross-sectional view of the cleaning jig of FIG.
【図１１】従来の洗浄装置を示す断面図。FIG. 11 is a cross-sectional view showing a conventional cleaning device.
【図１２】図１１の洗浄装置における流速分布を示す
図。12 is a diagram showing a flow velocity distribution in the cleaning apparatus of FIG.
２ 半導体基板 １１，２１，３１，４１，５１，６１ 洗浄液供給口 １２，２２，３２，４２，５２，６２ 洗浄液回収口 １４，２４，３４，４４，５４，６４ ノズル体 １５，２５，３５，４５，５５ ベース板 2 semiconductor substrate 11, 21, 31, 41, 51, 61 cleaning liquid supply port 12, 22, 32, 42, 52, 62 cleaning liquid recovery port 14, 24, 34, 44, 54, 64 nozzle body 15, 25, 35, 45,55 Base plate
Claims (1)
の半導体基板洗浄装置において、複数の洗浄液供給口
（１１，２１，３１，４１，５１，６１）を設け、半導
体基板表面に対して実質的に４５〜９０度の角度で洗浄
液を供給する構成にし、洗浄液供給口（１１，２１，３
１，４１，５１，６１）の近傍に洗浄液を回収するため
の洗浄液回収口（１２，２２，３２，４２，５２，６
２）を設けたことを特徴とする半導体基板洗浄装置。1. A semiconductor substrate cleaning apparatus configured to clean a surface of a semiconductor substrate with a cleaning liquid, wherein a plurality of cleaning liquid supply ports (11, 21, 31, 41, 51, 61) are provided and the surface of the semiconductor substrate is substantially covered. The cleaning liquid is supplied at an angle of 45 to 90 degrees to the cleaning liquid supply port (11, 21, 3
1, 41, 51, 61) and a cleaning liquid recovery port (12, 22, 32, 42, 52, 6) for recovering the cleaning liquid.
2) A semiconductor substrate cleaning apparatus characterized by being provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05072755A JP3118112B2 (en) | 1993-03-09 | 1993-03-09 | Semiconductor substrate cleaning equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05072755A JP3118112B2 (en) | 1993-03-09 | 1993-03-09 | Semiconductor substrate cleaning equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06260468A true JPH06260468A (en) | 1994-09-16 |
| JP3118112B2 JP3118112B2 (en) | 2000-12-18 |
Family
ID=13498495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP05072755A Expired - Fee Related JP3118112B2 (en) | 1993-03-09 | 1993-03-09 | Semiconductor substrate cleaning equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3118112B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001068449A (en) * | 1999-08-24 | 2001-03-16 | Nec Corp | Single wafer processing wet treating apparatus and method thereof |
| WO2001050505A3 (en) * | 2000-01-03 | 2002-01-31 | Semitool Inc | A microelectronic workpiece processing tool including a processing reactor having a paddle assembly for agitation of a processing fluid proximate to the workpiece |
| KR100699011B1 (en) * | 2005-12-20 | 2007-03-28 | (주)티제이이앤지 | Circuit ething nozzle |
| US7313462B2 (en) | 2003-06-06 | 2007-12-25 | Semitool, Inc. | Integrated tool with automated calibration system and interchangeable wet processing components for processing microfeature workpieces |
| US7390382B2 (en) | 2003-07-01 | 2008-06-24 | Semitool, Inc. | Reactors having multiple electrodes and/or enclosed reciprocating paddles, and associated methods |
| US7393439B2 (en) | 2003-06-06 | 2008-07-01 | Semitool, Inc. | Integrated microfeature workpiece processing tools with registration systems for paddle reactors |
| KR100904278B1 (en) * | 2001-11-12 | 2009-06-25 | 도쿄엘렉트론가부시키가이샤 | Substrate processing apparatus |
-
1993
- 1993-03-09 JP JP05072755A patent/JP3118112B2/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001068449A (en) * | 1999-08-24 | 2001-03-16 | Nec Corp | Single wafer processing wet treating apparatus and method thereof |
| US7524406B2 (en) | 2000-01-03 | 2009-04-28 | Semitool, Inc. | Processing apparatus including a reactor for electrochemically etching microelectronic workpiece |
| WO2001050505A3 (en) * | 2000-01-03 | 2002-01-31 | Semitool Inc | A microelectronic workpiece processing tool including a processing reactor having a paddle assembly for agitation of a processing fluid proximate to the workpiece |
| US6547937B1 (en) | 2000-01-03 | 2003-04-15 | Semitool, Inc. | Microelectronic workpiece processing tool including a processing reactor having a paddle assembly for agitation of a processing fluid proximate to the workpiece |
| US6773559B2 (en) | 2000-01-03 | 2004-08-10 | Semitool, Inc. | Processing apparatus including a reactor for electrochemically etching a microelectronic workpiece |
| US7294244B2 (en) | 2000-01-03 | 2007-11-13 | Semitool, Inc. | Microelectronic workpiece processing tool including a processing reactor having a paddle assembly for agitation of a processing fluid proximate to the workpiece |
| KR100904278B1 (en) * | 2001-11-12 | 2009-06-25 | 도쿄엘렉트론가부시키가이샤 | Substrate processing apparatus |
| US7313462B2 (en) | 2003-06-06 | 2007-12-25 | Semitool, Inc. | Integrated tool with automated calibration system and interchangeable wet processing components for processing microfeature workpieces |
| US7393439B2 (en) | 2003-06-06 | 2008-07-01 | Semitool, Inc. | Integrated microfeature workpiece processing tools with registration systems for paddle reactors |
| US7371306B2 (en) | 2003-06-06 | 2008-05-13 | Semitool, Inc. | Integrated tool with interchangeable wet processing components for processing microfeature workpieces |
| US7390382B2 (en) | 2003-07-01 | 2008-06-24 | Semitool, Inc. | Reactors having multiple electrodes and/or enclosed reciprocating paddles, and associated methods |
| US7390383B2 (en) | 2003-07-01 | 2008-06-24 | Semitool, Inc. | Paddles and enclosures for enhancing mass transfer during processing of microfeature workpieces |
| KR100699011B1 (en) * | 2005-12-20 | 2007-03-28 | (주)티제이이앤지 | Circuit ething nozzle |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3118112B2 (en) | 2000-12-18 |
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