JPH06252339A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
JPH06252339A
JPH06252339A JP5040839A JP4083993A JPH06252339A JP H06252339 A JPH06252339 A JP H06252339A JP 5040839 A JP5040839 A JP 5040839A JP 4083993 A JP4083993 A JP 4083993A JP H06252339 A JPH06252339 A JP H06252339A
Authority
JP
Japan
Prior art keywords
integrated circuit
circuit device
modules
heat
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5040839A
Other languages
Japanese (ja)
Inventor
Masao Iwata
雅男 岩田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5040839A priority Critical patent/JPH06252339A/en
Publication of JPH06252339A publication Critical patent/JPH06252339A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/14Structural association of two or more printed circuits
    • H05K1/144Stacked arrangements of planar printed circuit boards

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To provide an integrated circuit device of a structure, wherein even if SCICs, which are made highly integrated and available at higher frequencies, or the integrated circuit device with the SCISs mounted thereon in a high density are/is used, the reliability of the SCICs is never reduced by heat which is generated from the SCICs. CONSTITUTION:The constitution of an integrated circuit device is a constitution constituted into such a structure that two sheets of modules 6a and 6b consisting of SCICs 2 and chip capacitors 3, which are mounted on one surface of a printed board 1, are made to closely adhere in opposition to each other on the board surface, on which the SCICs 2 and the capacitors 3 are not mounted, holding a heat dissipation plate 5 between them and moreover, the two sheets of the modules 6a and 6b made to closely adhere in opposition to each other are supported by both opening parts 4a of each of C-shaped terminals 4 soldered on terminal pads 7 on the modules 6a and 6b.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体モノリシック集
積回路(以下、SCICという)及びSCICを実装し
た集積回路装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor monolithic integrated circuit (hereinafter referred to as SCIC) and an integrated circuit device mounted with SCIC.

【0002】[0002]

【従来の技術】近年、高集積化、高周波化されたSCI
C、あるいはSCICが高密度実装された集積回路装置
が要望されている。
2. Description of the Related Art In recent years, highly integrated and high frequency SCI
There is a demand for an integrated circuit device in which C or SCIC is mounted at high density.

【0003】従来、この種の集積回路装置には実装密度
を高める方法として、薄膜導体を蒸着したまたは厚膜導
体を印刷焼成したセラミック基板上あるいはガラス基板
上にSCICのベアチップをダイスボンディングまたは
ワイヤーボンディングまたはフェースダウンボンディン
グすることによって、SCICの電極と薄膜導体または
厚膜導体とを接続したモジュールを多階層に積層すると
いう方法が用いられていた。
Conventionally, as a method of increasing the packaging density in this kind of integrated circuit device, a bare chip of SCIC is die-bonded or wire-bonded on a ceramic substrate or a glass substrate on which a thin film conductor is vapor-deposited or a thick film conductor is printed and fired. Alternatively, a method has been used in which modules in which SCIC electrodes are connected to thin film conductors or thick film conductors are stacked in multiple layers by face-down bonding.

【0004】以下、従来の集積回路装置について図面を
参照しながら説明する。図8は従来の集積回路装置を示
す斜視図である。図8に示すように、集積回路装置は封
止樹脂12で外装を形成し、その内部は基板13に半導
体素子14がダイスボンディングされ、また半導体素子
14とアウターリード15とがワイヤーボンディングで
接続されている。さらに、アウターリード15は基板1
3から基板13の外側へL字状に折曲されて引き出され
ている。
A conventional integrated circuit device will be described below with reference to the drawings. FIG. 8 is a perspective view showing a conventional integrated circuit device. As shown in FIG. 8, the integrated circuit device has an outer package formed of a sealing resin 12, inside of which a semiconductor element 14 is die-bonded to a substrate 13, and the semiconductor element 14 and an outer lead 15 are connected by wire bonding. ing. Further, the outer leads 15 are the substrate 1
It is bent in an L-shape from 3 to the outside of the substrate 13 and is drawn out.

【0005】[0005]

【発明が解決しようとする課題】しかしながら上記従来
の構成では、高集積化、高周波化されたSCICあるい
はSCICが高密度実装された集積回路装置を用いた場
合に、SCICの発熱量が大きくなるので、SCICに
悪影響を及ぼしSCICの信頼性が低下するという問題
点を有していた。
However, in the above-mentioned conventional configuration, when a highly integrated and high frequency SCIC or an integrated circuit device in which SCICs are densely mounted is used, the heat generation amount of the SCIC becomes large. , The SCIC is adversely affected and the reliability of the SCIC is lowered.

【0006】本発明は上記従来の問題点を解決するもの
で、高集積化、高周波化されたSCICあるいはSCI
Cが高密度実装された集積回路装置を用いても、SCI
Cの発熱によってSCICの信頼性を低下させることの
ない集積回路装置を提供することを目的としている。
The present invention solves the above-mentioned problems of the prior art, and is a highly integrated and high frequency SCIC or SCI.
Even if an integrated circuit device in which C is mounted at high density is used, SCI
An object of the present invention is to provide an integrated circuit device in which reliability of SCIC is not deteriorated by heat generation of C.

【0007】[0007]

【課題を解決するための手段】本発明は上記課題を解決
するために、基板の片面にSCICを実装した2枚のモ
ジュールと、SCICから発生する熱を放熱する放熱板
とを有し、前記2枚のモジュールのSCICを実装して
いない基板面を放熱板を挟んで対向させた構成である。
In order to solve the above problems, the present invention has two modules in which SCICs are mounted on one surface of a substrate, and a heat dissipation plate for radiating heat generated from the SCICs. This is a configuration in which the board surfaces of the two modules on which the SCICs are not mounted are opposed to each other with a heat sink interposed therebetween.

【0008】[0008]

【作用】この構成によって、2枚のモジュールによって
挟まれた放熱板はSCICから発生する熱をモジュール
の外部に効率的に発散させることができる。
With this structure, the heat sink sandwiched between the two modules can efficiently dissipate the heat generated from the SCIC to the outside of the module.

【0009】[0009]

【実施例】(実施例1)以下、本発明の一実施例につい
て図面を参照しながら説明する。図1は本発明の第1の
実施例における集積回路装置を示す斜視図、図2は前記
集積回路装置を分解した状態を示す斜視図である。
(Embodiment 1) An embodiment of the present invention will be described below with reference to the drawings. 1 is a perspective view showing an integrated circuit device according to a first embodiment of the present invention, and FIG. 2 is a perspective view showing a state in which the integrated circuit device is disassembled.

【0010】図1、図2に示すように、集積回路装置は
SCIC2とチップコンデンサ3が基板1に実装接続さ
れたモジュール6a、6bと、接合部5aと放熱部5b
を有した熱伝導性の良い金属からなる放熱板5と、開口
部4aと接続部4bを有した金属からなるC字状の端子
4とからなり、SCIC2とチップコンデンサ3が実装
接続されていないモジュール6a、6bの面が互いに放
熱板5の接合部5aを挟んで対向密着させられるととも
に、接合部5aの4角に接合部5aの4角の一部を上側
に折曲して設けられた4つの固定片8aによってモジュ
ール6aを位置決めし、また、接合部5aに対して下側
に折曲した放熱部5bと放熱板5の放熱部5bと対向し
た2角に接合部5aの2角の一部を下側に折曲して設け
られた2つの固定片8bによってモジュール6bを位置
決めしており、さらに、接合部5aを挟んで対向密着さ
せられたモジュール6a、6bの端子パッド7にC字状
の端子4の両開口部4aが半田付けされることによっ
て、電気的な接続が行われるとともに、モジュール6
a、6bと放熱板5が支持され、接続部4bによって支
持された集積回路装置をプリント基板に実装するように
した構成である。
As shown in FIGS. 1 and 2, the integrated circuit device includes modules 6a and 6b in which an SCIC 2 and a chip capacitor 3 are mounted and connected to a substrate 1, a joint portion 5a and a heat radiating portion 5b.
And a C-shaped terminal 4 made of metal having an opening 4a and a connecting portion 4b, and the SCIC 2 and the chip capacitor 3 are not mounted and connected. The surfaces of the modules 6a and 6b are closely adhered to each other with the joint portion 5a of the heat dissipation plate 5 sandwiched therebetween, and the four corners of the joint portion 5a are partially bent upward. The module 6a is positioned by the four fixing pieces 8a, and the heat dissipation portion 5b bent downward with respect to the joint portion 5a and the heat dissipation portion 5b of the heat sink 5 are opposite to each other at two corners of the joint portion 5a. The module 6b is positioned by two fixing pieces 8b that are partially bent downward, and further, C is attached to the terminal pads 7 of the modules 6a and 6b that are opposed and closely contacted with each other with the joint 5a interposed therebetween. Both openings of the letter-shaped terminal 4 By 4a is soldered, with electrical connection is made, the module 6
In this configuration, the integrated circuit device supported by the connecting parts 4b is mounted on a printed circuit board.

【0011】以上のように構成された集積回路装置につ
いて、以下その動作について説明する。
The operation of the integrated circuit device configured as described above will be described below.

【0012】SCIC2の高集積化、高周波化にともな
ってSCIC2に発生した熱は、モジュール6a、6b
の基板1を通して放熱板5の接合部5aに伝導し、さら
に接合部5aに伝導した熱は放熱部5bに伝導して外部
に発散させられる。
The heat generated in the SCIC 2 due to the higher integration and higher frequency of the SCIC 2 is generated by the modules 6a and 6b.
The heat conducted to the joint portion 5a of the heat dissipation plate 5 through the substrate 1 and further conducted to the joint portion 5a is conducted to the heat dissipation portion 5b and radiated to the outside.

【0013】この結果、SCIC2に発生した熱はモジ
ュール6a、6b内に蓄積されず、放熱板5を介してモ
ジュール6a、6bの外部に発散されるので、熱による
SCIC2の信頼性低下を防止することができる。
As a result, the heat generated in the SCIC 2 is not stored in the modules 6a and 6b but is radiated to the outside of the modules 6a and 6b through the heat dissipation plate 5, so that the reliability of the SCIC 2 is prevented from being deteriorated by the heat. be able to.

【0014】なお、集積回路装置をプリント基板に実装
する際に、放熱部5bをプリント基板の導体パターンに
接触するように取り付ければ、SCIC2から発生した
熱をプリント基板の導体パターンに放熱することができ
る。
When mounting the integrated circuit device on a printed circuit board, if the heat radiating portion 5b is attached so as to contact the conductive pattern of the printed circuit board, the heat generated from the SCIC 2 can be radiated to the conductive pattern of the printed circuit board. it can.

【0015】また、放熱板5の接合部5aとモジュール
6a、6bとの間に、熱伝導性グリースまたは熱伝導性
接着剤などの熱伝導性のある粘性物質を塗布すれば、互
いの接合表面の凹凸によって生じる隙間を充填するの
で、放熱板5の接合部5aとモジュール6a、6bとの
密着性が高まり、放熱板5の放熱部5bによる放熱作用
の効果がより向上する。この結果、熱によるSCIC2
の信頼性低下の防止効果をより一層増すことができる。
If a heat conductive viscous substance such as a heat conductive grease or a heat conductive adhesive is applied between the joint portion 5a of the heat radiating plate 5 and the modules 6a and 6b, the mutual joint surfaces will be Since the gaps caused by the unevenness are filled, the adhesiveness between the joint portion 5a of the heat dissipation plate 5 and the modules 6a and 6b is enhanced, and the effect of the heat dissipation effect of the heat dissipation portion 5b of the heat dissipation plate 5 is further improved. As a result, SCIC2 due to heat
It is possible to further increase the effect of preventing the deterioration of reliability.

【0016】さらに、C字状の端子4はモジュール6
a、6bの端子パッド7と接続を行う開口部4aと集積
回路装置をプリント基板に実装するための接続部4bが
一体となった構成であるので、プリント基板と集積回路
装置の間隔を一定にすることができる。
Further, the C-shaped terminal 4 is a module 6
Since the opening 4a for connecting to the terminal pads 7 of a and 6b and the connecting portion 4b for mounting the integrated circuit device on the printed circuit board are integrated, the distance between the printed circuit board and the integrated circuit device is kept constant. can do.

【0017】この結果、集積回路装置をプリント基板に
実装する際、集積回路装置で使われる端子の数が多くて
も、従来の集積回路装置で使われるL字状の端子のよう
に、端子が曲がったり折れたりするなどの端子の変形に
よるプリント基板への接続不良がなく、また、SCIC
2のチップサイズが機能の違いで異なっても、モジュー
ル化する機能によって最小の形状に合う端子を用意する
ことができる。
As a result, when the integrated circuit device is mounted on the printed circuit board, even if the number of terminals used in the integrated circuit device is large, the terminals can be formed like the L-shaped terminals used in the conventional integrated circuit device. There is no defective connection to the printed circuit board due to terminal deformation such as bending or bending, and SCIC
Even if the two chip sizes are different due to different functions, it is possible to prepare a terminal that fits the smallest shape by the modularization function.

【0018】(実施例2)図3は本発明の第2の実施例
における集積回路装置を示す斜視図である。
(Embodiment 2) FIG. 3 is a perspective view showing an integrated circuit device according to a second embodiment of the present invention.

【0019】図3に示すように集積回路装置は、図1、
図2に示した集積回路装置における放熱板5を改良した
ものであり、放熱板5の接合部5aに穴9を2つ設けた
構成である。
The integrated circuit device shown in FIG.
This is a modification of the heat sink 5 in the integrated circuit device shown in FIG. 2, and has a configuration in which two holes 9 are provided in the joint portion 5a of the heat sink 5.

【0020】以上のように構成された集積回路装置につ
いて、以下その動作について説明する。モジュール6
a、6bと放熱板5の接合部5aとの密着性を高めるた
めに、熱伝導性のある粘性物質を塗布した場合、塗布さ
れた熱伝導性のある粘性物質の量が過剰であっても、モ
ジュール6a、6bに対向密着させた放熱板5の接合部
5aに穴9が設けられていることにより、過剰分は穴9
に吸収される。
The operation of the integrated circuit device configured as described above will be described below. Module 6
When a viscous substance having thermal conductivity is applied in order to improve the adhesion between the a and 6b and the joint portion 5a of the heat dissipation plate 5, even if the amount of the applied viscous substance having thermal conductivity is excessive. Since the holes 9 are provided in the joint portion 5a of the heat dissipation plate 5 that is closely adhered to the modules 6a and 6b so as to face each other, the excess portion is left in the holes 9
Is absorbed by.

【0021】この結果、塗布された熱伝導性のある粘性
物質の量が過剰であっても、対向密着させた放熱板5の
接合部5aとモジュール6a、6bとの間から過剰分が
はみ出し、集積回路装置に影響を及ぼすことがなく、過
剰分が放熱板5の接合部5aに設けた穴9に吸収され、
集積回路装置の信頼性を損なわないものである。
As a result, even if the amount of the applied viscous substance having thermal conductivity is excessive, the excessive amount protrudes from between the joint portion 5a of the heat dissipation plate 5 and the modules 6a and 6b which are in close contact with each other, Excessive amount is absorbed in the hole 9 provided in the joint portion 5a of the heat dissipation plate 5 without affecting the integrated circuit device,
The reliability of the integrated circuit device is not impaired.

【0022】(実施例3)図4(a)、(b)は本発明
の第3の実施例における集積回路装置を示す斜視図であ
る。
(Embodiment 3) FIGS. 4A and 4B are perspective views showing an integrated circuit device according to a third embodiment of the present invention.

【0023】図4(a)、(b)に示すように集積回路
装置は、図1、図2に示した集積回路装置における放熱
板5の放熱部5bを改良したものである。
As shown in FIGS. 4A and 4B, the integrated circuit device is obtained by improving the heat radiation portion 5b of the heat radiation plate 5 in the integrated circuit device shown in FIGS.

【0024】図4(a)では、放熱部5bが直方体の突
起部分10aと長方形の通風孔10bを有した放熱フィ
ン10となった構成である。
In FIG. 4A, the heat radiation portion 5b is a heat radiation fin 10 having a rectangular parallelepiped projection portion 10a and a rectangular ventilation hole 10b.

【0025】この構成により、モジュール6a、6bに
実装されたSCIC2から発生した熱は放熱板5の接合
部5aに伝導した後、放熱部5bに設けられた放熱フィ
ン10の突起部分10aより輻射され、通風孔10bよ
り対流させられる。この結果、放熱効果はより一層増
す。
With this structure, the heat generated from the SCIC 2 mounted on the modules 6a and 6b is conducted to the joint portion 5a of the heat radiating plate 5 and then radiated from the protruding portion 10a of the heat radiating fin 10 provided on the heat radiating portion 5b. , And is convected from the ventilation hole 10b. As a result, the heat dissipation effect is further enhanced.

【0026】また、図4(b)では、放熱部5bが延長
されており、延長された放熱部5bがモジュール6aを
覆うようにモジュール6a側に折曲し、モジュール6a
の上面部分の放熱部5bに直方体の突起部分11aと長
方形の通風孔11bを有した放熱フィン11となった構
成である。
Further, in FIG. 4B, the heat radiating portion 5b is extended, and the extended heat radiating portion 5b is bent toward the module 6a so as to cover the module 6a.
In this configuration, the heat radiating portion 11 has a rectangular parallelepiped projection portion 11a and a rectangular ventilation hole 11b on the heat radiating portion 5b on the upper surface of the heat radiating fin 11.

【0027】この構成により、図4(a)のような放熱
効果に加え、放熱部5bがモジュール6a、6bを保護
し、モジュール6a、6bに実装されたSCIC2を誤
って手で触ったりして、傷つけるということがなくな
る。この結果、放熱効果とともに保護効果が生じる。
With this structure, in addition to the heat radiation effect as shown in FIG. 4A, the heat radiation portion 5b protects the modules 6a and 6b, and the SCIC 2 mounted on the modules 6a and 6b may be touched by mistake. , It won't hurt you. As a result, a heat dissipation effect and a protection effect are produced.

【0028】(実施例4)図5は本発明の実施例におけ
る集積回路装置の端子を改良した端子を示す斜視図であ
る。
(Embodiment 4) FIG. 5 is a perspective view showing a terminal obtained by improving the terminal of the integrated circuit device according to the embodiment of the present invention.

【0029】図5に示すように端子4は、図1、図2に
示した集積回路装置における端子4を改良したものであ
り、端子4の中程に放熱板を挟んで対向した2枚のモジ
ュールの側面に圧接させる突片4Cを設けた構成であ
る。
As shown in FIG. 5, the terminal 4 is an improvement of the terminal 4 in the integrated circuit device shown in FIGS. 1 and 2. This is a configuration in which a projecting piece 4C that is brought into pressure contact with the side surface of the module is provided.

【0030】この構成により、端子4を放熱板5を挟ん
で対向密着させたモジュール6a、6bに取り付ける際
に、端子4をモジュール6a、6bの側面に圧接させれ
ば、端子4が端子パッド7と接続する開口部4aを支点
として回転するのを防ぐ回転止め具としての効果が生じ
る。
With this structure, when the terminal 4 is attached to the modules 6a and 6b which are closely adhered to each other with the heat sink 5 sandwiched therebetween, the terminals 4 are brought into pressure contact with the side surfaces of the modules 6a and 6b. There is an effect as a rotation stopper that prevents rotation around the opening 4a connected to the fulcrum.

【0031】さらに、端子4の材質が適度な弾力性を有
するものであれば、端子4の開口部4aによって放熱板
5を挟んで対向密着させたモジュール6a、6bの端子
パッド7を挟み込む際、C字状の開口部4aを押し広げ
るようにして取り付けることができる。この結果、端子
4に弾性力が生じ、この弾性力によって放熱板5の接合
部5aとモジュール6a、6bとの密着性が高まり、モ
ジュール6a、6bと放熱板5の接合部5aとの間の熱
抵抗を下げることができる。このとき、実施例1に述べ
た熱伝導性のある粘性物質を放熱板5の接合部5aとモ
ジュール6a、6bとの間に塗布すれば、この端子4の
弾性力によって、塗布された熱伝導性のある粘性物質の
層の厚みを経時的に薄くさせることができ、より一層密
着性を高め、熱抵抗を下げることができる。
Further, when the material of the terminal 4 has an appropriate elasticity, when the terminal pads 7 of the modules 6a and 6b which are closely adhered to each other with the heat sink 5 sandwiched by the opening 4a of the terminal 4 are sandwiched, The C-shaped opening 4a can be attached so as to be widened. As a result, an elastic force is generated in the terminal 4, and the elastic force enhances the adhesion between the joint portion 5a of the heat dissipation plate 5 and the modules 6a and 6b, and the adhesive force between the modules 6a and 6b and the joint portion 5a of the heat dissipation plate 5 is increased. The thermal resistance can be reduced. At this time, if the viscous substance having thermal conductivity described in the first embodiment is applied between the joint portion 5a of the heat dissipation plate 5 and the modules 6a and 6b, the applied heat conduction is caused by the elastic force of the terminal 4. The layer of the viscous substance having the property can be made thinner over time, the adhesion can be further enhanced, and the thermal resistance can be lowered.

【0032】(実施例5)図6は本発明の実施例におけ
る集積回路装置の端子を改良し、複数連結した端子を示
す斜視図である。
(Embodiment 5) FIG. 6 is a perspective view showing an improved terminal of an integrated circuit device according to an embodiment of the present invention, showing a plurality of connected terminals.

【0033】図6に示すように端子4は樹脂からなるフ
レーム11に端子4の中間部がモジュール6a、6bの
端子パッド7の間隔と等間隔に嵌入され、フレーム11
によって支持された構成である。
As shown in FIG. 6, in the terminal 4, the frame 11 made of resin is fitted with the intermediate portion of the terminal 4 at an equal interval to the interval between the terminal pads 7 of the modules 6a and 6b.
It is a structure supported by.

【0034】この構成により、SCIC2のチップサイ
ズが機能の違いで異なっても、モジュール化する機能に
よって、C字状の端子4を支持したフレーム11を最小
の形状に合う長さに切断して用いることができるととも
に端子4の開口部4aで一括して端子パッド7を挟みこ
むことができる。
With this configuration, even if the chip size of the SCIC 2 differs depending on the function, the frame 11 supporting the C-shaped terminal 4 is cut to a length suitable for the minimum shape and used depending on the function of modularization. In addition, the terminal pads 7 can be sandwiched by the openings 4a of the terminals 4 all together.

【0035】また、図7は本発明の実施例における集積
回路装置の複数連結した端子を改良した端子を示す斜視
図である。図7に示すように端子4は、図6に示した複
数連結した端子を改良したものであり、端子4の中間部
に切り欠き4dを有した構成である。
FIG. 7 is a perspective view showing a terminal obtained by improving a plurality of connected terminals of the integrated circuit device according to the embodiment of the present invention. As shown in FIG. 7, the terminal 4 is an improvement of the plurality of connected terminals shown in FIG. 6, and has a configuration in which a notch 4d is provided in the intermediate portion of the terminal 4.

【0036】この構成により、フレーム11で端子4を
支持する際、切り欠き4dはその支持を強固にするの
で、フレーム11の幅wを小さくしても、その支持力を
保持できるとともに、図1に示す集積回路装置において
放熱板5を介してモジュール6a、6bを対向密着さ
せ、C字状の端子4の開口部4aで端子パッド7を挟み
込む際に、さらに柔軟な弾性が生じ、密着性がより一層
増す。
With this structure, when the terminal 4 is supported by the frame 11, the notch 4d strengthens the support, so that even if the width w of the frame 11 is made small, the supporting force can be maintained and, as shown in FIG. In the integrated circuit device shown in FIG. 3, when the modules 6a and 6b are closely adhered to each other via the heat dissipation plate 5 and the terminal pad 7 is sandwiched between the openings 4a of the C-shaped terminal 4, more flexible elasticity is generated and adhesion is improved. Increase more.

【0037】[0037]

【発明の効果】以上のように本発明によれば、高集積
化、高周波化されたSCIC、あるいはSCICが高密
度実装された集積回路装置を用いても、SCICから発
生する熱によってSCICの信頼性を低下させることが
ない集積回路装置の提供を実現できるものである。
As described above, according to the present invention, even if a highly integrated and high frequency SCIC or an integrated circuit device in which the SCIC is mounted at a high density is used, the reliability of the SCIC is ensured by the heat generated from the SCIC. Therefore, it is possible to realize the provision of an integrated circuit device which does not deteriorate the property.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例における集積回路装置を
示す斜視図
FIG. 1 is a perspective view showing an integrated circuit device according to a first embodiment of the present invention.

【図2】本発明の第1の実施例における集積回路装置を
分解した状態を示す斜視図
FIG. 2 is a perspective view showing an exploded state of the integrated circuit device according to the first embodiment of the present invention.

【図3】本発明の第2の実施例における集積回路装置を
分解した状態を示す斜視図
FIG. 3 is a perspective view showing a state in which an integrated circuit device according to a second embodiment of the present invention is disassembled.

【図4】(a)本発明の第3の実施例における集積回路
装置を示す斜視図 (b)本発明の第3の実施例における集積回路装置を示
す斜視図
FIG. 4A is a perspective view showing an integrated circuit device according to a third embodiment of the present invention. FIG. 4B is a perspective view showing an integrated circuit device according to the third embodiment of the present invention.

【図5】本発明の実施例における集積回路装置の端子を
改良した端子を示す斜視図
FIG. 5 is a perspective view showing a terminal obtained by improving the terminal of the integrated circuit device according to the embodiment of the present invention.

【図6】本発明の実施例における集積回路装置の端子を
改良し、複数連結した端子を示す斜視図
FIG. 6 is a perspective view showing a terminal in which a plurality of terminals are improved by improving the terminals of the integrated circuit device according to the embodiment of the present invention.

【図7】本発明の実施例における集積回路装置の複数連
結した端子を改良した端子を示す斜視図
FIG. 7 is a perspective view showing a terminal improved from a plurality of connected terminals of an integrated circuit device according to an embodiment of the present invention.

【図8】従来の集積回路装置を示す斜視図FIG. 8 is a perspective view showing a conventional integrated circuit device.

【符号の説明】[Explanation of symbols]

1 基板 2 半導体モノリシック集積回路 3 チップコンデンサ 4 端子 4a 開口部 4b 接続部 5 放熱板 5a 接合部 5b 放熱部 6a モジュール 6b モジュール 7 端子パッド 8a 固定片 8b 固定片 1 Substrate 2 Semiconductor Monolithic Integrated Circuit 3 Chip Capacitor 4 Terminal 4a Opening 4b Connection 5 Heatsink 5a Joint 5b Heatsink 6a Module 6b Module 7 Terminal Pad 8a Fixing 8b Fixing

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 基板の片面に半導体モノリシック集積回
路を実装した2枚のモジュールと、半導体モノリシック
集積回路から発生する熱を放熱する放熱板とを有し、前
記2枚のモジュールの半導体モノリシック集積回路を実
装していない基板面を放熱板を挟んで対向させたことを
特徴とする集積回路装置。
1. A semiconductor monolithic integrated circuit of the two modules, comprising two modules each having a semiconductor monolithic integrated circuit mounted on one surface of a substrate and a heat dissipation plate for radiating heat generated from the semiconductor monolithic integrated circuit. An integrated circuit device, characterized in that the surfaces of the substrates not mounted with are opposed to each other with a heat sink interposed therebetween.
【請求項2】 放熱板を挟んで対向した2枚のモジュー
ルの半導体モノリシック集積回路を実装した基板面をC
字状の形状をした端子が前記端子の両開口部で支持した
ことを特徴とする請求項1記載の集積回路装置。
2. The substrate surface on which the semiconductor monolithic integrated circuits of two modules, which are opposed to each other with a heat sink interposed, is mounted on a substrate surface.
2. The integrated circuit device according to claim 1, wherein the terminal having a letter shape is supported by both openings of the terminal.
【請求項3】 放熱板に放熱フィンを設けたことを特徴
とする請求項1または請求項2記載の集積回路装置。
3. The integrated circuit device according to claim 1, wherein the heat dissipation plate is provided with heat dissipation fins.
【請求項4】 放熱板に開口部を設けたことを特徴とす
る請求項1または請求項2記載の集積回路装置。
4. The integrated circuit device according to claim 1, wherein the heat dissipation plate is provided with an opening.
【請求項5】 放熱板にモジュールの位置決めを行う固
定片を設けたことを特徴とする請求項1または請求項2
記載の集積回路装置。
5. The heat dissipating plate is provided with a fixing piece for positioning the module.
The integrated circuit device described.
【請求項6】 C字状の形状をした端子の中程に放熱板
を挟んで対向した2枚のモジュールの側面に圧接させる
突片を設けたことを特徴とする請求項2記載の集積回路
装置。
6. The integrated circuit according to claim 2, wherein a projecting piece is provided in the middle of the C-shaped terminal, the projecting piece being in pressure contact with the side surfaces of the two modules facing each other with the heat sink interposed therebetween. apparatus.
【請求項7】 C字状の形状をした端子を複数個一定の
間隔をもってフレームに支持させたことを特徴とする請
求項2記載の集積回路装置。
7. The integrated circuit device according to claim 2, wherein a plurality of C-shaped terminals are supported by the frame at a constant interval.
JP5040839A 1993-03-02 1993-03-02 Integrated circuit device Pending JPH06252339A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5040839A JPH06252339A (en) 1993-03-02 1993-03-02 Integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5040839A JPH06252339A (en) 1993-03-02 1993-03-02 Integrated circuit device

Publications (1)

Publication Number Publication Date
JPH06252339A true JPH06252339A (en) 1994-09-09

Family

ID=12591783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5040839A Pending JPH06252339A (en) 1993-03-02 1993-03-02 Integrated circuit device

Country Status (1)

Country Link
JP (1) JPH06252339A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006094398A (en) * 2004-09-27 2006-04-06 Matsushita Electric Works Ltd Pressure wave generator
WO2006126252A1 (en) * 2005-05-24 2006-11-30 Fujitsu Limited Mounting structure for ic tag and ic chip for mounting purpose
JP2011119582A (en) * 2009-12-07 2011-06-16 Shindengen Electric Mfg Co Ltd Lamination-and-fixing structure and lamination-and-fixing method for substrates

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006094398A (en) * 2004-09-27 2006-04-06 Matsushita Electric Works Ltd Pressure wave generator
JP4525273B2 (en) * 2004-09-27 2010-08-18 パナソニック電工株式会社 Pressure wave generator
WO2006126252A1 (en) * 2005-05-24 2006-11-30 Fujitsu Limited Mounting structure for ic tag and ic chip for mounting purpose
JPWO2006126252A1 (en) * 2005-05-24 2008-12-25 富士通株式会社 IC tag mounting structure and IC chip for mounting
US7868437B2 (en) 2005-05-24 2011-01-11 Fujitsu Limited Mounting structure for IC tag and IC chip for mounting
JP4610613B2 (en) * 2005-05-24 2011-01-12 富士通株式会社 IC tag mounting structure and IC chip for mounting
JP2011119582A (en) * 2009-12-07 2011-06-16 Shindengen Electric Mfg Co Ltd Lamination-and-fixing structure and lamination-and-fixing method for substrates

Similar Documents

Publication Publication Date Title
US5777386A (en) Semiconductor device and mount structure thereof
JP2642548B2 (en) Semiconductor device and manufacturing method thereof
US6330158B1 (en) Semiconductor package having heat sinks and method of fabrication
JP2974552B2 (en) Semiconductor device
JPH07221218A (en) Semiconductor device
JP2001250911A (en) Resin-sealed semiconductor device for power
JPH08139477A (en) Printed-wiring board device
US20050201062A1 (en) Apparatus and method for attaching a heat sink to an integrated circuit module
TW448514B (en) Semiconductor device and its manufacture, circuit board and electronic apparatus
JP2591499B2 (en) Semiconductor device
JPH10335580A (en) Semiconductor package and semiconductor module using it
KR100598652B1 (en) Semiconductor device
KR100271836B1 (en) Metallic electronic component package device
JPH0846134A (en) Semiconductor device
JPH06252339A (en) Integrated circuit device
US20210134702A1 (en) Electronic device having a chip package module
JPH0382060A (en) Semiconductor device
JPS63190363A (en) Power package
JP3521931B2 (en) Semiconductor device and manufacturing method thereof
JPH11251497A (en) Electronic circuit module
JP4060020B2 (en) Semiconductor device
JPH04350958A (en) Heat dissipator of semiconductor integrated circuit
JP3714808B2 (en) Semiconductor device
CN117480602A (en) Semiconductor module
JPH03292799A (en) Heat dissipating structure of printed wiring board unit