JPH06224115A - Resist pattern forming method - Google Patents
Resist pattern forming methodInfo
- Publication number
- JPH06224115A JPH06224115A JP974893A JP974893A JPH06224115A JP H06224115 A JPH06224115 A JP H06224115A JP 974893 A JP974893 A JP 974893A JP 974893 A JP974893 A JP 974893A JP H06224115 A JPH06224115 A JP H06224115A
- Authority
- JP
- Japan
- Prior art keywords
- resist pattern
- substrate
- resist
- developing solution
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置の製造工程に
おけるレジストパターン形成方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a resist pattern in a semiconductor device manufacturing process.
【０００２】[0002]
【従来の技術】近年、半導体装置、特に大規模集積回路
（ＬＳＩ）の高密度化、高速化にともない、素子の微細
化が要求されている。ＬＳＩの製造工程においては写真
蝕刻工程で使われる光の波長が短いほど微細な素子が形
成できるため、波長が３６５ｎｍのｉ線、２４８ｎｍの
ＫｒＦエキシマレーザ、さらには波長が１ｎｍ前後の軟
Ｘ線（以下単にＸ線と呼ぶ）等を光源として微細なレジ
ストパターンを形成する多くの試みがなされている。2. Description of the Related Art In recent years, as semiconductor devices, especially large-scale integrated circuits (LSI), have become higher in density and higher in speed, miniaturization of elements has been required. In the LSI manufacturing process, the shorter the wavelength of light used in the photo-etching process is, the finer the element can be formed. Many attempts have been made to form a fine resist pattern using a light source such as X-ray).
【０００３】これらの短波長の光やＸ線（以下これらを
高エネルギー光と呼ぶ）によりレジストパターンを形成
する従来の露光方法の一例として、Ｘ線露光方法を簡単
に説明する。An X-ray exposure method will be briefly described as an example of a conventional exposure method for forming a resist pattern using light of these short wavelengths and X-rays (hereinafter these are referred to as high-energy light).
【０００４】図２において、３はレジスト膜、３０はレ
ジストパターン、４はＸ線マスク、５は現像液やリンス
液である。In FIG. 2, 3 is a resist film, 30 is a resist pattern, 4 is an X-ray mask, and 5 is a developing solution or a rinsing solution.
【０００５】Ｓｉ０2膜２が形成されたＳｉ基板１の表
面に回転塗布により厚さ１μｍのレジスト膜３を形成し
た後、ステッパを用いてＸ線マスク４と対向させて両者
の位置合わせを行なってからＸ線を照射する逐次露光を
行なう（図２ａ）。高エネルギー光がＸ線でなく、ｉ線
やエキシマレーザ光の場合には、マスクと基板を対向す
る代わりに、マスクを透過したｉ線やエキシマレーザを
レンズを通して縮小し、Ｓｉ基板１表面に投影する。After a resist film 3 having a thickness of 1 μm is formed on the surface of the Si substrate 1 on which the SiO 2 film 2 is formed by spin coating, the stepping device is used to face the X-ray mask 4 to align the two. Then, sequential exposure is performed by irradiating X-rays (FIG. 2a). When the high-energy light is not X-rays but i-rays or excimer laser light, instead of facing the mask and the substrate, the i-rays or excimer lasers that have passed through the mask are reduced through a lens and projected onto the surface of the Si substrate 1. To do.
【０００６】必要に応じて９０゜Ｃ前後の温度で短時間
の露光後ベーキング（ＰＥＢ）を行なった後現像を行
う。通常露光したレジストを現像する際は、現像液中に
Ｓｉ基板１を浸したり、回転可能なウエハチャック６で
吸着したＳｉ基板１を停止もしくは低速回転させ、Ｓｉ
基板表面に現像液５を溜めることによって、現像液中に
浸すのと同じ状態にする（図２ｂ）。If necessary, after-exposure baking (PEB) is carried out at a temperature of about 90 ° C. for a short time, and then development is carried out. When developing the normally exposed resist, the Si substrate 1 is immersed in a developing solution, or the Si substrate 1 adsorbed by the rotatable wafer chuck 6 is stopped or rotated at a low speed.
By pooling the developer 5 on the surface of the substrate, the same state as immersion in the developer is obtained (FIG. 2b).
【０００７】レジスト膜３の露光された部分が溶解され
た後（ポジ型レジスト）、Ｓｉ基板を回転させながらリ
ンス液を加えることによって現像液を十分置換し、脱離
乾燥する（図２ｃ）。次に１２０゜Ｃ前後の温度で加熱
することによって、現像したレジストパタ−ンを硬化さ
せる。After the exposed portion of the resist film 3 is dissolved (positive type resist), the developing solution is sufficiently replaced by adding a rinse solution while rotating the Si substrate, and is removed by drying (FIG. 2c). Next, the developed resist pattern is cured by heating at a temperature of around 120 ° C.
【０００８】このようにして形成したレジストパターン
３０はその後の工程において、例えばＳｉＯ2膜２をエ
ッチングする際、あるいはＳｉ基板１中にイオン注入す
る際のマスクとして用いられるため、十分な厚さが必要
である。またＳｉ基板１表面はそれ以前の工程により配
線電極パターン等の段差が形成されることが多く、この
段差の頂部でも上記エッチングやイオン注入時のマスク
効果をもたせるため、レジスト膜３は１μｍあるいはそ
れ以上の厚さが要求される。Since the resist pattern 30 thus formed is used as a mask in the subsequent steps, for example, when etching the SiO 2 film 2 or when implanting ions into the Si substrate 1, a sufficient thickness is obtained. is necessary. In addition, a step such as a wiring electrode pattern is often formed on the surface of the Si substrate 1 by a previous step, and the resist film 3 has a thickness of 1 μm or less in order to have a mask effect at the time of the etching or ion implantation even at the top of the step. The above thickness is required.
【０００９】[0009]
【発明が解決しようとする課題】微細なパターンを形成
する場合には、レジストパターン３０はその厚さが線幅
に対する比（アスペクト比）が大きくなる。例えば０．
１５μｍ幅のパターンを形成する場合にはこのアスペク
ト比は６以上になる。このようにアスペクト比が大きい
レジストパターンを形成しようとすると、上記現像工程
で折れて倒れるものが多くなる（図３）。このようにレ
ジストパタ−ン３０が倒れる現象は、レジストパタ−ン
３０の幅が狭いほど、厚さが厚いほど、また隣接するパ
タ−ンとの間隔が小さいほど起こりやすいことが知られ
ている。現像工程で現像液やリンス液を脱離乾燥する際
には、通常Ｓｉ基板を高速回転させて遠心脱離を用い
る。このとき現像されたレジストパタ−ン間にある現像
液やリンス液が脱離するときに、表面張力でレジストパ
タ−ンに引っ張り応力を及ぼすために、このレジストパ
タ−ンが折れて倒るものと考えられる。When forming a fine pattern, the resist pattern 30 has a large ratio of the thickness to the line width (aspect ratio). For example, 0.
When forming a pattern having a width of 15 μm, the aspect ratio becomes 6 or more. When attempting to form a resist pattern having a large aspect ratio as described above, many of the pieces break and fall in the developing process (FIG. 3). It is known that the phenomenon in which the resist pattern 30 collapses as described above is more likely to occur as the width of the resist pattern 30 is narrower, the thickness thereof is thicker, and the interval between adjacent patterns is smaller. When desorbing and drying the developing solution and the rinse solution in the developing step, the Si substrate is usually rotated at a high speed and centrifugal desorption is used. At this time, when the developing solution or rinsing solution between the developed resist patterns is released, the resist pattern is considered to be broken and fall down because the surface tension exerts a tensile stress on the resist pattern. ..
【００１０】本発明は上記問題点に鑑み、折れて倒れる
ことなく、アスペクト比の大きい微細な寸法のレジスト
パターンを形成する方法を提供することを目的にする。In view of the above problems, it is an object of the present invention to provide a method for forming a resist pattern having a large aspect ratio and a fine dimension without breaking and collapsing.
【００１１】[0011]
【課題を解決するための手段】本発明のレジストパター
ン形成方法は、現像液またはリンス液を脱離乾燥する際
にレジストパタ−ンが表面張力による応力を受けても、
現像されたレジストパタ−ンが折れて倒れるのを防止す
るものである。請求項１の構成は、Ｓｉ基板表面に形成
したレジストを露光し、現像液により現像した後、現像
液、またはリンス液を前記Ｓｉ基板表面より脱離するこ
となく、現像されたレジストパタ−ンが現像液またはリ
ンス液に浸された状態で、前記レジストパタ−ンを加熱
硬化し、その後にリンス液を脱離することを特徴とす
る。The method of forming a resist pattern according to the present invention, even if the resist pattern is subjected to stress due to surface tension during desorption and drying of the developing solution or rinsing solution,
It is intended to prevent the developed resist pattern from breaking and falling. According to the structure of claim 1, after the resist formed on the surface of the Si substrate is exposed to light and developed with a developing solution, the developed resist pattern is removed without separating the developing solution or the rinse solution from the surface of the Si substrate. The resist pattern is heat-cured in a state of being immersed in a developing solution or a rinse solution, and then the rinse solution is released.
【００１２】また請求項２はレジストパタ−ンを加熱す
る方法に関し、その構成は、表面に現像されたあと現像
液またはリンス液に浸されたレジストパタ−ンを有する
半導体基板を、圧力を高めた容器内で加熱し前記レジス
トパタ−ンを硬化させることを特徴とする。A second aspect of the present invention relates to a method for heating a resist pattern, which has a structure in which a semiconductor substrate having a resist pattern which has been developed on its surface and then immersed in a developing solution or a rinsing solution has an increased pressure. It is characterized in that the resist pattern is cured by heating inside.
【００１３】[0013]
【作用】請求項１の構成によるレジストパタ−ン形成方
法では、露光後に現像する際に、現像液やリンス液を脱
離する前に加熱硬化し、形成されたレジストパターンの
機械的強度を大きくしておくため、その後で遠心脱離法
等により現像液やリンス液を脱離乾燥して、レジストパ
タ−ンに応力がかかっても、レジストパターンが基板表
面から折れることが無い。In the resist pattern forming method according to the first aspect of the present invention, when developing is performed after exposure, the resist pattern is heated and cured before the developing solution and the rinsing solution are removed to increase the mechanical strength of the formed resist pattern. Therefore, even if the developing solution and the rinsing solution are desorbed and dried by a centrifugal desorption method or the like after that and the resist pattern is stressed, the resist pattern does not break from the substrate surface.
【００１４】また請求項２の構成によると、現像液やリ
ンス液が沸騰する事なく高い温度で加熱され、レジスト
パタ−ンが硬化され、機械的強度を増すことができる。According to the second aspect of the invention, the developing solution and the rinsing solution are heated at a high temperature without boiling, and the resist pattern is hardened, so that the mechanical strength can be increased.
【００１５】[0015]
【実施例】以下本発明の実施例を図面を参照しながら説
明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１６】図１はレジストパターンを形成する部分工
程断面図であり、１はＳｉ基板、２はＳｉＯ2膜、３は
ポジ型のレジスト膜、５は現像液、またはリンス液、６
はヒータ内臓の回転可能なウエハチャック、７は加圧容
器、１３は現像後のレジストパターンである。FIG. 1 is a sectional view of a partial step of forming a resist pattern. 1 is a Si substrate, 2 is a SiO 2 film, 3 is a positive resist film, 5 is a developing solution or a rinsing solution, and 6
Is a rotatable wafer chuck with a built-in heater, 7 is a pressure vessel, and 13 is a resist pattern after development.
【００１７】表面にＳｉＯ２膜２を有するＳｉ基板１の
表面に厚さ１μｍのレジスト膜３を形成した後、ステッ
パによりＸ線マスク６と対向させて両者の位置合わせを
行なってからＸ線の逐次露光を行なう（図１ａ）。After a resist film 3 having a thickness of 1 μm is formed on the surface of a Si substrate 1 having a SiO 2 film 2 on the surface, a stepper is used to face the X-ray mask 6 to align the two, and then X-rays are successively obtained. Exposure is performed (FIG. 1a).
【００１８】必要に応じて９０゜Ｃ前後の温度で短時間
の露光後ベーキング（ＰＥＢ）を行なった後、上部を解
放した加圧容器７内でＳｉ基板１裏面をウエハチャック
６で吸着し、従来の現像方法と同様にＳｉ基板１表面に
現像液５を表面張力で溜め、Ｘ線が照射された領域を溶
解する。レジストパターン１３を形成した後、現像液を
脱離させないままリンス液を加えることにより現像液５
をリンス液５で置換する。このときＳｉ基板を低速で回
転しながらリンス液を加えることによって、置換を促進
することができる（図１ｂ）。After the post exposure bake (PEB) for a short time at a temperature of about 90 ° C., if necessary, the back surface of the Si substrate 1 is adsorbed by the wafer chuck 6 in the pressure vessel 7 with the upper part opened. Similar to the conventional developing method, the developing solution 5 is accumulated on the surface of the Si substrate 1 by surface tension, and the region irradiated with X-rays is dissolved. After the resist pattern 13 is formed, a rinsing solution is added to the developing solution 5 without removing the developing solution.
Is replaced with rinse solution 5. At this time, the replacement can be promoted by adding the rinse liquid while rotating the Si substrate at a low speed (FIG. 1b).
【００１９】次に加圧容器７を閉じて内部に窒素ガス８
を導入して加圧容器７内を３気圧に加圧し、ウエハチャ
ック６に内蔵したヒータでリンス液５を表面に溜めたま
まのＳｉ基板１を１２０゜Ｃで加熱して、レジストパタ
ーン１３を硬化させる（図１ｃ）。リンス液が水の場
合、加圧容器内を３気圧にすると沸点は１３０゜Ｃ程度
になるため、Ｓｉ基板を加熱してもリンス液が沸騰する
ことはない。Next, the pressure vessel 7 is closed and nitrogen gas 8 is put inside.
Is introduced to pressurize the inside of the pressurizing container 7 to 3 atm, and the heater built in the wafer chuck 6 heats the Si substrate 1 with the rinse liquid 5 accumulated on the surface at 120 ° C. to form the resist pattern 13. Allow to cure (Fig. 1c). When the rinse liquid is water, the boiling point becomes about 130 ° C. when the pressure in the pressure vessel is set to 3 atm, so that the rinse liquid does not boil even if the Si substrate is heated.
【００２０】このような方法ではレジストが現像され微
細なレジストパターン１３が形成された後は、加熱硬化
されるまでは現像液やリンス液５がレジストパターン間
から離脱されることがないために、レジストパターンが
応力を受けることがなく、アスペクト比が大きい微細な
レジストパターン１３が折れて倒れることがない。その
後はＳｉ基板１を高速で回転させ、表面に溜っているリ
ンス液５を円心脱離し乾燥する。In such a method, after the resist is developed and the fine resist pattern 13 is formed, the developing solution and the rinse solution 5 are not separated from between the resist patterns until they are heated and hardened. The resist pattern is not subjected to stress, and the fine resist pattern 13 having a large aspect ratio does not break and fall. After that, the Si substrate 1 is rotated at a high speed, and the rinse liquid 5 accumulated on the surface is decentered and dried.
【００２１】本実施例においては、現像終了後にリンス
液５をＳｉ基板１表面に溜めた状態のまま加熱するため
に、加圧容器７内の圧力を高めることによってリンス液
５の沸点を上昇させ、リンス液５が沸騰しないようにし
てＳｉ基板１を加熱し、レジストパターン１３を硬化さ
せている。In the present embodiment, in order to heat the rinse liquid 5 in the state of being stored on the surface of the Si substrate 1 after the development is completed, the boiling point of the rinse liquid 5 is raised by increasing the pressure in the pressure vessel 7. The Si substrate 1 is heated so that the rinse liquid 5 does not boil, and the resist pattern 13 is cured.
【００２２】現像液、あるいはリンス液５として沸点の
高いものを用いると、現像終了後、あるいは現像液をリ
ンス液で置換した後に、これらの液をＳｉ基板１表面に
溜めたまま加熱する事ができる。また現像液を沸点の高
い第１のリンス液で置換して加熱した後、第２のリンス
液で最終洗浄をすることもでき、このような場合には、
本実施例で用いたような加圧容器７を用いる必要はな
い。If a developer or rinse solution having a high boiling point is used, these solutions may be heated while being accumulated on the surface of the Si substrate 1 after the development is completed or after the developer is replaced with the rinse solution. it can. Alternatively, the developer may be replaced with the first rinse liquid having a high boiling point and heated, and then the final rinse may be performed with the second rinse liquid. In such a case,
It is not necessary to use the pressure vessel 7 used in this embodiment.
【００２３】さらに加熱方法も本実施例の方法に限るこ
となく、赤外線等により表面よりＳｉ基板を加熱する方
法や、加熱容器７内に高温のガス８を導入する方法を選
ぶこともできる。Further, the heating method is not limited to the method of this embodiment, and a method of heating the Si substrate from the surface by infrared rays or the like or a method of introducing the high temperature gas 8 into the heating container 7 can be selected.
【００２４】[0024]
【発明の効果】本発明のレジストパターン形成方法にお
いては、現像終了後に現像液やリンス液を基板表面より
脱離する事なく半導体基板を加熱することによって、形
成されたレジストパターンを硬化し機械的強度を増して
おくため、その後現像液やリンス液を脱離しても折れて
倒れることがなく、アスペクト比が大きい微細なレジス
トパターンを形成することが容易になる。In the resist pattern forming method of the present invention, after the development is completed, the semiconductor substrate is heated without desorbing the developing solution or the rinsing solution from the surface of the substrate, thereby curing the formed resist pattern and mechanically. Since the strength is increased, even if the developing solution or the rinse solution is subsequently removed, the developing solution and the rinsing solution do not break and collapse, and it becomes easy to form a fine resist pattern having a large aspect ratio.
【図１】本発明の第１の実施例におけるレジストパター
ン形成方法の部分工程断面図FIG. 1 is a partial process cross-sectional view of a resist pattern forming method according to a first embodiment of the present invention.
【図２】従来のレジストパターン形成方法の部分工程断
面図FIG. 2 is a partial process sectional view of a conventional resist pattern forming method.
【図３】従来方法により形成したレジストパタ−ンの断
面模式図FIG. 3 is a schematic sectional view of a resist pattern formed by a conventional method.
１ Ｓｉ基板 ２ ＳｉＯ２膜 ３ レジスト膜 ４ Ｘ線マスク ５ 現像液またはリンス液 ６ ウエハチャック ７ 加圧容器 ８ 窒素ガス １３ レジストパターン 1 Si substrate 2 SiO2 film 3 Resist film 4 X-ray mask 5 Developer or rinse liquid 6 Wafer chuck 7 Pressurized container 8 Nitrogen gas 13 Resist pattern
Claims (2)
前記レジストを現像したあと、レジストパタ−ンが現像
液またはリンス液に浸された状態で、該レジストパタ−
ンを加熱硬化することを特徴とするレジストパターン形
成方法。1. A resist formed on the surface of a substrate is exposed to light,
After the resist is developed, the resist pattern is immersed in a developing solution or a rinse solution.
A method for forming a resist pattern, which comprises curing the resin by heating.
板を圧力を高めた容器内で加熱し前記レジストを加熱硬
化することを特徴とする請求項１に記載のレジストパタ
ーン形成方法。2. The method for forming a resist pattern according to claim 1, wherein a substrate having a developing solution or a rinsing solution on its surface is heated in a container having an increased pressure to heat and cure the resist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP974893A JPH06224115A (en) | 1993-01-25 | 1993-01-25 | Resist pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP974893A JPH06224115A (en) | 1993-01-25 | 1993-01-25 | Resist pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06224115A true JPH06224115A (en) | 1994-08-12 |
Family
ID=11728929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP974893A Pending JPH06224115A (en) | 1993-01-25 | 1993-01-25 | Resist pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06224115A (en) |
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| US6462356B1 (en) | 1999-10-25 | 2002-10-08 | Seiko Epson Corporation | Light emitting device |
| US6512249B2 (en) | 2001-02-26 | 2003-01-28 | Seiko Epson Corporation | Light emitting device, display device, and electronic appliance |
| US6512250B1 (en) | 1999-06-10 | 2003-01-28 | Seiko Epson Corporation | Light-emitting device |
| US6587620B2 (en) | 2000-06-16 | 2003-07-01 | Seiko Epson Corporation | Surface emitting device |
| US6635409B1 (en) * | 2001-07-12 | 2003-10-21 | Advanced Micro Devices, Inc. | Method of strengthening photoresist to prevent pattern collapse |
| US6704335B1 (en) | 1998-12-17 | 2004-03-09 | Seiko Epson Corporation | Light-emitting device |
| US6727646B1 (en) | 1999-03-23 | 2004-04-27 | Seiko Epson Corporation | Light-emitting device |
| US6737802B2 (en) | 2000-08-11 | 2004-05-18 | Seiko Epson Corporation | Light-emitting device |
| US6795463B2 (en) | 2000-03-01 | 2004-09-21 | Seiko Epson Corporation | Light -emitting device |
| JP2018054666A (en) * | 2016-09-26 | 2018-04-05 | カンタツ株式会社 | Pattern manufacturing device, pattern manufacturing method, and pattern manufacturing program |
-
1993
- 1993-01-25 JP JP974893A patent/JPH06224115A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5689391A (en) * | 1989-12-28 | 1997-11-18 | Thomson Consumer Electronics | Magneto-optic multitrack reading head having a plurality of reflective rays |
| US6704335B1 (en) | 1998-12-17 | 2004-03-09 | Seiko Epson Corporation | Light-emitting device |
| US6727646B1 (en) | 1999-03-23 | 2004-04-27 | Seiko Epson Corporation | Light-emitting device |
| US6512250B1 (en) | 1999-06-10 | 2003-01-28 | Seiko Epson Corporation | Light-emitting device |
| US6462356B1 (en) | 1999-10-25 | 2002-10-08 | Seiko Epson Corporation | Light emitting device |
| US6795463B2 (en) | 2000-03-01 | 2004-09-21 | Seiko Epson Corporation | Light -emitting device |
| US6587620B2 (en) | 2000-06-16 | 2003-07-01 | Seiko Epson Corporation | Surface emitting device |
| US6737802B2 (en) | 2000-08-11 | 2004-05-18 | Seiko Epson Corporation | Light-emitting device |
| US6512249B2 (en) | 2001-02-26 | 2003-01-28 | Seiko Epson Corporation | Light emitting device, display device, and electronic appliance |
| US6635409B1 (en) * | 2001-07-12 | 2003-10-21 | Advanced Micro Devices, Inc. | Method of strengthening photoresist to prevent pattern collapse |
| JP2018054666A (en) * | 2016-09-26 | 2018-04-05 | カンタツ株式会社 | Pattern manufacturing device, pattern manufacturing method, and pattern manufacturing program |
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