JPH06222310A - Magneto-optical element - Google Patents
Magneto-optical elementInfo
- Publication number
- JPH06222310A JPH06222310A JP1000093A JP1000093A JPH06222310A JP H06222310 A JPH06222310 A JP H06222310A JP 1000093 A JP1000093 A JP 1000093A JP 1000093 A JP1000093 A JP 1000093A JP H06222310 A JPH06222310 A JP H06222310A
- Authority
- JP
- Japan
- Prior art keywords
- magneto
- optical element
- single crystal
- optical
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は光増幅器等の光アイソレ
ータとして用いられる磁気光学素子に係り、特に波長領
域０．８μｍ〜１．１μｍの使用に好適な磁気光学素子
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magneto-optical element used as an optical isolator such as an optical amplifier, and more particularly to a magneto-optical element suitable for use in a wavelength range of 0.8 μm to 1.1 μm.
【０００２】[0002]
【従来の技術】従来、Ｅｒ添加光ファイバを用いた１．
５μｍ帯進行波型光増幅器は高効率で偏波依存性がな
く、伝送系との整合性に優れた特徴を示し、その実用的
観点より０．９８μｍおよび１．４８μｍ帯を用いたレ
ーザーダイオード（以下ＬＤ）励起が盛んに研究されて
いる。信号光利得・雑音特性が実験的に検討された結
果、０．９８μｍ帯励起は１．４８μｍ帯励起に比べよ
り高効率・低雑音特性であることが分かっている。しか
し、現状では１．４８μｍ帯に適した光デバイス（光ア
イソレータなど）を備えた光増幅器に関する開発が進ん
でいる。2. Description of the Related Art Conventionally, 1.
The 5 μm traveling-wave optical amplifier is highly efficient, has no polarization dependence, and has excellent compatibility with the transmission system. From the practical viewpoint, laser diodes using 0.98 μm and 1.48 μm bands ( Hereinafter, LD) excitation has been actively studied. As a result of experimentally studying the signal light gain / noise characteristics, it has been found that the 0.98 μm band pump has higher efficiency and lower noise characteristics than the 1.48 μm band pump. However, at present, the development of an optical amplifier equipped with an optical device (optical isolator, etc.) suitable for the 1.48 μm band is progressing.
【０００３】[0003]
【発明が解決しようとする課題】現在、０．９８μｍ光
アイソレータは、テルビウム・ガリウム・ガーネット
（ＴＧＧ）単結晶を採用した光アイソレータが実用化さ
れている。しかし、ＬＤに比べて寸法があまりに大きい
ために将来的視野から検討されていない。また、バルク
のイットリウム・鉄・ガーネット（ＹＩＧ）およびＢｉ
置換ガーネットは、０．９８μｍ帯において吸収が大き
いため、透過損失約５ｄＢと実用的でない。ＺｎＳ型結
晶構造をもつＣｄＴｅのＣｄの一部をＭｎに置換したＣ
ｄ1-x ＭｎxＴｅは大きなベルデ定数をもつ材料で、可
視光波長０．８５〜０．６３μｍに対する光アイソレー
タ材料として実用性能が確認された｛小野寺、及川：第
１５回日本応用磁気学会学術講演概要集３０ａＢ−７、
ｐ１７９（１９９１）｝。At present, as the 0.98 μm optical isolator, an optical isolator employing a terbium gallium garnet (TGG) single crystal has been put into practical use. However, it is not considered from a future perspective because the size is too large as compared with the LD. In addition, bulk yttrium, iron, garnet (YIG) and Bi
The substituted garnet has a large absorption in the 0.98 μm band, and is thus impractical with a transmission loss of about 5 dB. C in which a part of Cd of CdTe having a ZnS type crystal structure is replaced with Mn
d 1-x Mn x Te is a material with a large Verdet constant, and its practical performance was confirmed as an optical isolator material for visible light wavelengths of 0.85 to 0.63 μm (Onodera, Oikawa: The 15th Annual Meeting of the Japan Society for Applied Magnetics) Lecture summary 30aB-7,
p179 (1991)}.
【０００４】しかしながら、０．９８μｍにおいてはベ
ルデ定数があまりに小さすぎて実用化は困難であった。
すなわち、０．９８μｍ帯励起光増幅器に用いられるＬ
Ｄモジュール化が可能な光アイソレータが実在しないこ
とが、本質的に高効率・低雑音特性において１．４８μ
ｍ帯励起より優れているのに実用化開発が遅れている要
因のひとつであった。However, at 0.98 μm, the Verdet constant was too small to be practically used.
That is, L used in the 0.98 μm pump optical amplifier
The fact that there is no optical isolator that can be used as a D module is essentially 1.48μ in terms of high efficiency and low noise characteristics.
This was one of the factors behind the delay in practical development, although it was superior to m-band excitation.
【０００５】そこで本発明の技術的課題は、上記欠点に
鑑み、波長領域０．８μｍ〜１．１μｍ（特に０．９８
μｍ）の使用に好適な磁気光学素子を提供することを目
的とする。In view of the above drawbacks, the technical problem of the present invention is that the wavelength region is 0.8 μm to 1.1 μm (particularly 0.98 μm).
μm) for the purpose of providing a magneto-optical element suitable for use.
【０００６】[0006]
【課題を解決するための手段】本発明によれば、Ｍｎお
よびＨｇを配合させたＣｄ1-x -yＭｎx Ｈｇy Ｔｅ単結
晶を有する磁気光学素子であって、前記単結晶は、波長
領域０．８μｍ〜１．１μｍに使用できるように、Ｍｎ
Ｔｅ−ＨｇＴｅ−ＣｄＴｅ擬３元系相図において、Ｍｎ
0.41Ｈｇ0.1 Ｃｄ0.49Ｔｅ、Ｍｎ0.41Ｈｇ0.2 Ｃｄ0.39
Ｔｅ、Ｍｎ0.45Ｈｇ0.25Ｃｄ0.3 Ｔｅ、Ｍｎ0.48Ｈｇ
0.2 Ｃｄ0.32Ｔｅ、の４点に囲まれる範囲に含まれる組
成を有することを特徴とする磁気光学素子が得られる。According to the present invention, there is provided a magneto-optical element having a Cd 1-x -y Mn x Hg y Te single crystal mixed with Mn and Hg, wherein the single crystal has a wavelength of Mn so that it can be used in the region 0.8 μm to 1.1 μm.
In the Te-HgTe-CdTe pseudo-ternary phase diagram, Mn
0.41 Hg 0.1 Cd 0.49 Te, Mn 0.41 Hg 0.2 Cd 0.39
Te, Mn 0.45 Hg 0.25 Cd 0.3 Te, Mn 0.48 Hg
A magneto-optical element having a composition contained in a range surrounded by four points of 0.2 Cd 0.32 Te is obtained.
【０００７】更に本発明によれば、前記磁気光学素子を
ファラデー回転子として備えてなることを特徴とする光
アイソレータが得られる。Further, according to the present invention, there is provided an optical isolator comprising the magneto-optical element as a Faraday rotator.
【０００８】[0008]
【作用】ＺｎＳ型結晶構造をもつＣｄＴｅのＣｄの一部
をＭｎに置換したＣｄ1-x Ｍｎx Ｔｅは大きなベルデ定
数をもつ材料で、可視光波長０．８５〜０．６３μｍに
対する光アイソレータ材料として実用性能が確認されて
いることは前述のとおりであるが、０．９８μｍ帯にお
いてはベルデ定数が小さいため実用性能が得られなかっ
た。これは、ベルデ定数が光の吸収端近傍で大きくなる
特徴があるためである。そこで、この材料を用いて実用
性能を得るためには、材料のバンドギャップエネルギー
を調整することとベルデ定数の絶対値が大きくなるよう
にＭｎ組成を選択する方向で検討すればよい。バンドギ
ャップエネルギーを０．９μｍ帯にシフトさせるために
は、Ｃｄの一部をＨｇで置換すればよい。最終的には、
バルクの結晶性が大きく影響を与える。そこで、結晶性
との兼ね合いで最適な結晶組成が決定される。[Function] Cd 1-x Mn x Te in which a part of Cd of CdTe having ZnS type crystal structure is replaced by Mn is a material having a large Verdet constant, and is an optical isolator material for visible light wavelength of 0.85 to 0.63 μm. Although the practical performance was confirmed as described above, the practical performance was not obtained in the 0.98 μm band due to the small Verdet constant. This is because the Verdet constant is large near the absorption edge of light. Therefore, in order to obtain practical performance using this material, consideration should be given to adjusting the bandgap energy of the material and selecting the Mn composition so that the absolute value of the Verdet constant becomes large. In order to shift the band gap energy to the 0.9 μm band, a part of Cd may be replaced with Hg. Eventually,
Bulk crystallinity has a large effect. Therefore, the optimum crystal composition is determined in consideration of the crystallinity.
【０００９】本発明に係る磁気光学素子によれば、アイ
ソレーション：３０ｄＢ以上、挿入損失：１ｄＢ以下の
実用特性を有するＬＤモジュール化が可能な０．９８μ
ｍ帯光アイソレータを得ることが可能となる。According to the magneto-optical element of the present invention, an LD module having practical characteristics of isolation: 30 dB or more and insertion loss: 1 dB or less is possible.
It is possible to obtain an m-band optical isolator.
【００１０】[0010]
【実施例】以下、本発明の実施例に係る磁気光学素子に
ついて添付図面を参照して説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS A magneto-optical element according to embodiments of the present invention will be described below with reference to the accompanying drawings.
【００１１】最初に、最適組成の選択について述べる。First, selection of the optimum composition will be described.
【００１２】ＭｎＴｅ−ＨｇＴｅ−ＣｄＴｅ擬３元系の
相図における種々の組成の結晶をブリッジマン法で作製
した。Ｃｄ、Ｍｎ、Ｔｅ、Ｈｇをそれぞれの組成比で石
英アンプル中に配合し、真空封入した。加熱時に完全に
溶融していない場合には、蒸気圧が高くなるために石英
アンプルが割れる可能性があるので、石英アンプルは十
分な肉厚を確保するとともにＴｅ過剰組成にして約８０
０℃程度の融点にし、育成工程での内圧を和らげる工夫
をする。Crystals of various compositions in the phase diagram of the MnTe-HgTe-CdTe pseudo-ternary system were prepared by the Bridgman method. Cd, Mn, Te, and Hg were mixed in a quartz ampoule in respective composition ratios and vacuum-encapsulated. If not completely melted at the time of heating, the quartz ampoule may crack due to the high vapor pressure, so the quartz ampoule should have a sufficient thickness and a Te excess composition of about 80%.
The melting point is set to about 0 ° C, and the internal pressure in the growing process is softened.
【００１３】この石英アンプルを縦型ブリッジマン炉に
入れ、溶融温度８００℃で１０時間保持したのち、石英
るつぼを徐々に降下させ、石英アンプルの低温部の一端
から結晶化させた。This quartz ampoule was placed in a vertical Bridgman furnace and held at a melting temperature of 800 ° C. for 10 hours. Then, the quartz crucible was gradually lowered to crystallize from one end of the low temperature portion of the quartz ampoule.
【００１４】図１に、ＬＤモジュール化が可能な光アイ
ソレータ（９．５φ×１０Ｌｍｍ）を実現可能な印加磁
場３０００Oeを加えた場合に、アイソレーション：３０
ｄＢ以上、挿入損失：１ｄＢ以下を実現できる組成を示
す。図１に示すように、本発明による磁気光学素子を構
成するＣｄ1-x -yＭｎx Ｈｇy Ｔｅ単結晶は、ＭｎＴｅ
−ＨｇＴｅ−ＣｄＴｅ擬３元系相図において、Ｍｎ0.41
Ｈｇ0.1 Ｃｄ0.49Ｔｅ、Ｍｎ0.41Ｈｇ0.2 Ｃｄ0.39Ｔ
ｅ、Ｍｎ0.45Ｈｇ0.25Ｃｄ0.3 Ｔｅ、Ｍｎ0.48Ｈｇ0.2
Ｃｄ0.32Ｔｅ、の４点に囲まれる範囲に含まれる組成を
有している。In FIG. 1, when an applied magnetic field of 3000 Oe that can realize an optical isolator (9.5φ × 10 Lmm) that can be formed into an LD module is added, isolation: 30
A composition that can realize an insertion loss of 1 dB or less and an insertion loss of 1 dB or more is shown. As shown in FIG. 1, the Cd 1-x -y Mn x Hg y Te single crystal that constitutes the magneto-optical element according to the present invention is MnTe.
In the -HgTe-CdTe quasi-ternary phase diagram, Mn 0.41
Hg 0.1 Cd 0.49 Te, Mn 0.41 Hg 0.2 Cd 0.39 T
e, Mn 0.45 Hg 0.25 Cd 0.3 Te, Mn 0.48 Hg 0.2
It has a composition contained in a range surrounded by four points of Cd 0.32 Te.
【００１５】図２に、Ｍｎ濃度可変でのＨｇドープ量を
変えた場合の性能指数Ｌ* の波長λの分散を示す。ここ
で、Ｌ* ＝（４５０／ｌｎ１０）・（α／θF ）、αは
吸収係数、θF は５０００Oeの磁場Ｈを印加した場合の
ファラデー回転角であり、ｘはＭｎ濃度、ｙはＨｇ濃度
である。FIG. 2 shows the dispersion of the wavelength λ of the figure of merit L * when the Hg doping amount is changed while the Mn concentration is changed. Here, L * = (450 / ln10) · (α / θ F ), α is the absorption coefficient, θ F is the Faraday rotation angle when a magnetic field H of 5000 Oe is applied, x is the Mn concentration, and y is Hg. The concentration.
【００１６】以下、本発明の実施例を示す。Examples of the present invention will be shown below.
【００１７】実施例 Ｍｎ0.45Ｈｇ0.2 Ｃｄ0.35Ｔｅの組成をもつ単結晶をＴ
ｅ過剰のメルトにすることで低溶融温度（８００℃）で
ブリッジマン法によって育成した。育成法は、前述の通
りである。育成した単結晶より｛１１１｝面が端面にな
るように２ｍｍ×２ｍｍ×１．７ｔｍｍの角板状の試料
を作製した。磁場を３０００Oe印加したところ、波長
０．９８μｍのレーザー光に対して、４５°のファラデ
ー回転が得られ、アイソレーション：３０ｄＢ、挿入損
失：０．７ｄＢ、アイソレータのサイズ：φ８×５Ｌｍ
ｍで光アイソレータとして十分に使えることが明らかに
なった。EXAMPLE A single crystal having a composition of Mn 0.45 Hg 0.2 Cd 0.35 Te
e An excessive melt was used to grow at a low melting temperature (800 ° C.) by the Bridgman method. The breeding method is as described above. A square plate-like sample of 2 mm × 2 mm × 1.7 tmm was prepared from the grown single crystal so that the {111} plane was the end face. When a magnetic field of 3000 Oe was applied, a Faraday rotation of 45 ° was obtained for a laser beam with a wavelength of 0.98 μm, isolation: 30 dB, insertion loss: 0.7 dB, isolator size: φ8 × 5 Lm
It has become clear that m can be used sufficiently as an optical isolator.
【００１８】比較例１ Ｍｎ0.45Ｈｇ0.1 Ｃｄ0.45Ｔｅの組成をもつ単結晶をＴ
ｅ過剰のメルトにすることで低溶融温度（８５０℃）で
ブリッジマン法によって育成した。育成法は、前述の通
りである。育成した単結晶より｛１１１｝面が端面にな
るように２ｍｍ×２ｍｍ×７．０ｍｍの角板状の試料を
作製した。磁場を５０００Oe印加したところ、波長０．
９８μｍのレーザー光に対して、４５°のファラデー回
転が得られ、アイソレーション：２５ｄＢ、挿入損失：
１．０ｄＢ、アイソレータのサイズ：φ１３×１５Ｌｍ
ｍであった。性能としてはアイソレーションが２５ｄＢ
と低く、実用的面からみても半導体レーザーに較べて多
少大きい。Comparative Example 1 A single crystal having a composition of Mn 0.45 Hg 0.1 Cd 0.45 Te
e An excessive melt was used to grow at a low melting temperature (850 ° C.) by the Bridgman method. The breeding method is as described above. A square plate-like sample of 2 mm × 2 mm × 7.0 mm was prepared from the grown single crystal so that the {111} plane was the end face. When a magnetic field of 5000 Oe was applied, the wavelength was 0.
Faraday rotation of 45 ° was obtained for a laser beam of 98 μm, isolation: 25 dB, insertion loss:
1.0 dB, isolator size: φ13 × 15 Lm
It was m. 25 dB isolation as performance
It is low compared to semiconductor lasers from a practical point of view.
【００１９】比較例２ Ｍｎ0.45Ｈｇ0.03Ｃｄ0.52Ｔｅの組成をもつ単結晶をＴ
ｅ過剰のメルトにすることで低溶融（９７０℃）でブリ
ッジマン法によって育成した。育成法は、前述の通りで
ある。育成した単結晶より｛１１１｝面が端面になるよ
うに２ｍｍ×２ｍｍ×１０ｍｍの角板状の試料を作製し
た。磁場を５０００Oe印加したところ、波長０．９８μ
ｍのレーザー光に対して、４５°のファラデー回転が得
られ、アイソレーション：２０ｄＢ、挿入損失：１．３
ｄＢ、アイソレータのサイズ：φ１３×２０Ｌｍｍであ
った。目的とする用途としては不十分の性能である。Comparative Example 2 A single crystal having a composition of Mn 0.45 Hg 0.03 Cd 0.52 Te
e By using an excessive melt, it was grown by the Bridgman method with low melting (970 ° C.). The breeding method is as described above. A square plate-like sample of 2 mm × 2 mm × 10 mm was prepared from the grown single crystal so that the {111} plane became the end face. When a magnetic field of 5000 Oe is applied, the wavelength is 0.98μ
Faraday rotation of 45 ° is obtained for laser light of m, isolation: 20 dB, insertion loss: 1.3.
dB, size of isolator: φ13 × 20 Lmm. The performance is insufficient for the intended use.
【００２０】[0020]
【発明の効果】以上説明したように、本発明によれば、
０．８〜１．１μｍの波長領域の光アイソレータに好適
な磁気光学素子を提供することが可能となる。As described above, according to the present invention,
It is possible to provide a magneto-optical element suitable for an optical isolator having a wavelength range of 0.8 to 1.1 μm.
【図１】本発明においてＬＤモジュール化が可能な光ア
イソレータを実現可能な結晶組成をＭｎＴｅ−ＨｇＴｅ
−ＣｄＴｅ擬３元系相図で表した図である。FIG. 1 shows the crystal composition of MnTe-HgTe that can realize an optical isolator that can be used as an LD module in the present invention.
-CdTe pseudo-ternary phase diagram.
【図２】Ｍｎ濃度可変でのＨｇドープ量を変えた場合の
性能指数Ｌ* の波長λの分散を示す図である。FIG. 2 is a diagram showing dispersion of wavelength λ of a figure of merit L * when the amount of Hg doping is changed while the Mn concentration is changed.
Claims (2)
Ｍｎx Ｈｇy Ｔｅ単結晶を有する磁気光学素子であっ
て、前記単結晶は、波長領域０．８μｍ〜１．１μｍに
使用できるように、ＭｎＴｅ−ＨｇＴｅ−ＣｄＴｅ擬３
元系相図において、 Ｍｎ0.41Ｈｇ0.1 Ｃｄ0.49Ｔｅ、Ｍｎ0.41Ｈｇ0.2 Ｃｄ
0.39Ｔｅ、 Ｍｎ0.45Ｈｇ0.25Ｃｄ0.3 Ｔｅ、Ｍｎ0.48Ｈｇ0.2 Ｃｄ
0.32Ｔｅ、 の４点に囲まれる範囲に含まれる組成を有することを特
徴とする磁気光学素子。 1. A Cd 1-x -y compounded with Mn and Hg.
A magneto-optical element having a Mn x Hg y Te single crystal, wherein the single crystal is MnTe-HgTe-CdTe pseudo-3 so that it can be used in a wavelength region of 0.8 μm to 1.1 μm.
In the original phase diagram, Mn 0.41 Hg 0.1 Cd 0.49 Te, Mn 0.41 Hg 0.2 Cd
0.39 Te, Mn 0.45 Hg 0.25 Cd 0.3 Te, Mn 0.48 Hg 0.2 Cd
A magneto-optical element having a composition contained in a range surrounded by four points of 0.32 Te.
転子として備えてなることを特徴とする光アイソレー
タ。2. An optical isolator comprising the magneto-optical element according to claim 1 as a Faraday rotator.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1000093A JPH06222310A (en) | 1993-01-25 | 1993-01-25 | Magneto-optical element |
| PCT/JP1994/000095 WO1994017437A1 (en) | 1993-01-25 | 1994-01-25 | Magneto-optical element |
| EP94904764A EP0634684B1 (en) | 1993-01-25 | 1994-01-25 | Magneto-optical element |
| US08/307,658 US5596447A (en) | 1993-01-25 | 1994-01-25 | Magnetooptical element |
| CA002132616A CA2132616C (en) | 1993-01-25 | 1994-01-25 | Magneto-optical element |
| DE69428559T DE69428559T2 (en) | 1993-01-25 | 1994-01-25 | MAGNETOOPTIC ELEMENT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1000093A JPH06222310A (en) | 1993-01-25 | 1993-01-25 | Magneto-optical element |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6922099A Division JPH11326854A (en) | 1999-03-15 | 1999-03-15 | Production of single crystal of cd1-x-ymnxhgyte for magnetooptical element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06222310A true JPH06222310A (en) | 1994-08-12 |
Family
ID=11738163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1000093A Pending JPH06222310A (en) | 1993-01-25 | 1993-01-25 | Magneto-optical element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06222310A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61123814A (en) * | 1984-11-21 | 1986-06-11 | Hitachi Ltd | Magnetic semiconductor material and optical isolator |
| JPH03229217A (en) * | 1990-02-02 | 1991-10-11 | Nippon Telegr & Teleph Corp <Ntt> | Magnetooptic material |
-
1993
- 1993-01-25 JP JP1000093A patent/JPH06222310A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61123814A (en) * | 1984-11-21 | 1986-06-11 | Hitachi Ltd | Magnetic semiconductor material and optical isolator |
| JPH03229217A (en) * | 1990-02-02 | 1991-10-11 | Nippon Telegr & Teleph Corp <Ntt> | Magnetooptic material |
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| A02 | Decision of refusal |
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