JPH06216220A - Positioning apparatus - Google Patents
Positioning apparatusInfo
- Publication number
- JPH06216220A JPH06216220A JP643693A JP643693A JPH06216220A JP H06216220 A JPH06216220 A JP H06216220A JP 643693 A JP643693 A JP 643693A JP 643693 A JP643693 A JP 643693A JP H06216220 A JPH06216220 A JP H06216220A
- Authority
- JP
- Japan
- Prior art keywords
- axis
- wafer
- positioning
- origin
- coarse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Details Of Measuring And Other Instruments (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体集積回路の製造
に使用される半導体製造装置、特に縮小投影露光装置，
電子線描画装置などの試料台に係り、高精度な位置決め
に好適な構造と測長方法を有する位置決め装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus used for manufacturing a semiconductor integrated circuit, particularly a reduction projection exposure apparatus,
The present invention relates to a sample stand such as an electron beam drawing apparatus, and a positioning apparatus having a structure suitable for highly accurate positioning and a length measuring method.
【０００２】[0002]
【従来の技術】近年、半導体集積回路の高集積化に伴
い、半導体製造装置の性能向上が要求されている。特に
縮少投影露光装置は、半導体集積回路の原画であるレテ
ィクルとウェハの相対位置や、各々の絶対位置を高い精
度合わせる必要があるため、ウェハ位置決め装置の精度
向上が重要となっている。2. Description of the Related Art In recent years, with the high integration of semiconductor integrated circuits, it has been required to improve the performance of semiconductor manufacturing equipment. Particularly in the reduced projection exposure apparatus, since it is necessary to adjust the relative position of the reticle, which is the original image of the semiconductor integrated circuit, and the wafer and the absolute position of each of them with high accuracy, it is important to improve the accuracy of the wafer positioning apparatus.
【０００３】ウェハ位置決め装置は、ウェハを真空吸着
し保持するウェハチャックとそれを保持しＺ軸回りに回
転移動が可能な粗θテーブルとそれを駆動する駆動系と
その他付加機能のためのセンサ類を有する試料台と、そ
の試料台を圧電素子アクチュエータなどによりＸ軸回
り，Ｙ軸回り，Ｚ軸回りの微小回転、およびＸ軸方向，
Ｙ軸方向の微小移動を行う微動機構と、Ｚ軸方向に上下
移動と水平面内Ｘ軸，Ｙ軸方向に移動可能な粗動機構
と、試料台の位置計測を行うためのレーザ測長器で構成
されている。The wafer positioning device includes a wafer chuck for vacuum-sucking and holding a wafer, a coarse θ table that holds the wafer and can rotate about the Z-axis, a drive system for driving the table, and sensors for other additional functions. And a sample stage having a micro-rotation about the X-axis, the Y-axis, and the Z-axis by a piezoelectric element actuator, and the X-axis direction.
A fine movement mechanism that performs fine movement in the Y-axis direction, a coarse movement mechanism that can move up and down in the Z-axis direction and move in the X-axis and Y-axis directions in the horizontal plane, and a laser length measuring device for measuring the position of the sample table. It is configured.
【０００４】このレーザ測長器は、主にＸ軸，Ｙ軸の位
置およびＺ軸回りの回転量を計測し、原点はマグネセン
サ等により電気的信号を検出して行っている。また、Ｘ
軸，Ｙ軸回りの回転量（傾斜量）は、マグネセンサによ
り行っている。This laser length-measuring device mainly measures the positions of the X-axis and the Y-axis and the amount of rotation around the Z-axis, and the origin is determined by detecting an electrical signal with a magnet sensor or the like. Also, X
The amount of rotation (inclination amount) about the axis and the Y axis is performed by a magnet sensor.
【０００５】しかしこの方法では、原点検出精度が±１
μｍ程度なので、原点検出を行う毎に、レティクルとの
相対位置が変化する。またマグネセンサは磁界の影響を
受け易く、マグネセンサが設置されている試料台移動に
より磁界が変化し検出精度に悪影響を与える。これを防
止するには、特殊材料によりマグネセンサを完全にシー
ルドする必要があるが、実装上困難で高価である。また
マグネセンサは、それ自体の構成が複雑で信号等のケー
ブルの本数が多く、試料台の移動時の負荷となり位置決
め精度の劣化を招き、より高精度なウェハ位置決め装置
を実現するうえで問題となってくる。However, in this method, the origin detection accuracy is ± 1.
Since it is about μm, the relative position to the reticle changes every time the origin is detected. Further, the magnet sensor is easily affected by the magnetic field, and the magnetic field changes due to the movement of the sample table on which the magnet sensor is installed, which adversely affects the detection accuracy. In order to prevent this, it is necessary to completely shield the magnet sensor with a special material, but this is difficult and expensive in terms of mounting. In addition, the magnet sensor has a complicated structure and a large number of cables such as signals, which becomes a load when moving the sample table and causes deterioration of positioning accuracy, which is a problem in realizing a more accurate wafer positioning device. Is coming.
【０００６】なお、この種の装置として関連するものに
は、特願平2−12085号等が上げられ、本件では渦電流式
非接触変位計，差動トランス等電気的手段をとってい
る。As a device related to this type, Japanese Patent Application No. 2-12085 and the like are listed, and in this case, an eddy current type non-contact displacement meter, a differential transformer and other electrical means are used.
【０００７】[0007]
【発明が解決しようとする課題】近年、半導体集積回路
の高集積化に伴い半導体製造装置の性能向上、特にウェ
ハの位置決め精度向上が重要となっている。In recent years, along with the high integration of semiconductor integrated circuits, it has become important to improve the performance of semiconductor manufacturing apparatuses, especially the accuracy of wafer positioning.
【０００８】現在のウェハ位置決め装置は、その位置決
めのために駆動系を粗動と微動の２系統に分割し、最終
的なウェハの位置決めを微動により行っている。また、
その高精度を要する位置計測及び原点検出は、レーザ測
長器とマグネセンサで行い、電気信号を検出して行って
いる。しかし、高精度で測定可能なレーザ測長器を所有
しているにもかかわらず、その原点となるマグネセンサ
の検出精度が不十分であるため、被位置決め対象を保持
する試料台の絶対位置精度に悪影響を与える。これは、
ウェハ位置決め装置のイニシャライズ等原点検出を行う
毎に生じる。またマグネセンサは、試料台の微小傾き量
及びその原点を検出しているが、上記を含むマグネセン
サは、磁界，温度の影響を受け易いため高精度で測定，
検出することが困難である。さらに本ウェハ位置決め装
置は、上記の様にＸ軸，Ｙ軸の原点検出，試料台の微小
傾き量の測定及びその原点検出を行うために６個のマグ
ネセンサを使用しているため、その信号等のケーブルの
本数が多く、試料台の移動時の負荷となり、ウェハ位置
決め装置の精度劣化の要因となる。In the current wafer positioning apparatus, the drive system is divided into two systems, coarse movement and fine movement, for the purpose of positioning, and the final wafer positioning is performed by fine movement. Also,
The position measurement and the origin detection, which require high precision, are performed by a laser length measuring device and a magnet sensor, and an electric signal is detected. However, even though we have a laser length measuring device that can measure with high accuracy, the detection accuracy of the magnet sensor, which is the origin, is insufficient, so the absolute position accuracy of the sample table that holds the positioning target is insufficient. Adversely affect. this is,
It occurs every time the origin is detected such as the initialization of the wafer positioning device. Further, the magnet sensor detects the minute tilt amount of the sample table and the origin thereof, but the magnet sensor including the above is easily affected by the magnetic field and temperature, so that the measurement can be performed with high accuracy.
Difficult to detect. Further, since the wafer positioning device uses six magnet sensors to detect the origins of the X-axis and Y-axis, measure the minute tilt amount of the sample stage, and detect the origins as described above, Since the number of such cables is large, it becomes a load when the sample table is moved, which causes deterioration of accuracy of the wafer positioning device.
【０００９】本発明の目的は、ウェハ位置決め装置の原
点検出精度を向上することにあり、ウェハを保持する試
料台の高精度位置決めに寄与する。An object of the present invention is to improve the origin detection accuracy of the wafer positioning device, which contributes to high-accuracy positioning of the sample stage holding the wafer.
【００１０】[0010]
【課題を解決するための手段】上記課題を解決するため
に、位置決め装置の原点検出及び微小位置計測をエアマ
イクロメータにより行うものである。In order to solve the above problems, the origin of the positioning device and the minute position measurement are performed by an air micrometer.
【００１１】[0011]
【作用】本ウェハ位置決め装置は、ウェハを真空吸着し
保持するウェハチャックとそれを保持し平面内をＺ軸回
りに回転移動が可能な粗θテーブルとそれを駆動する駆
動系とその付加機能のためのセンサ類を有する試料台
と、その試料台を圧電素子アクチュエータによりＸ軸回
り，Ｙ軸回り，Ｚ軸回りの微小回転およびＸ軸方向，Ｙ
軸方向の微小移動を行う微動機構と、Ｚ軸方向の上下移
動と水平面内Ｘ軸，Ｙ軸方向に移動可能な粗動機構と、
試料台の水平面内Ｘ軸，Ｙ軸方向の位置とＺ軸回りの回
転方向の原点検出位置、また、その裏面をＸ軸，Ｙ軸回
りの回転方向（試料台の傾斜）の原点検出及び回転量の
測定位置とし、エアマイクロメータにより試料台を直接
測定するため、磁界，温度の影響を受けにくい高精度な
原点検出，回転量測定が可能となる。また、エアマイク
ロにより、原点検出や位置計測を試料台とのギャップに
よる圧力と基準圧力の差で管理するため、そのためのセ
ンサ等のケーブルが減少し、ウェハ位置決め装置移動時
の負荷低減が可能となる。The present wafer positioning apparatus is composed of a wafer chuck that holds a wafer by vacuum suction, a rough θ table that holds the wafer chuck and can rotate about the Z axis in the plane, a drive system that drives the table, and its additional functions. And a sample stage having sensors for use in the sample stage, and the sample stage is rotated by a piezoelectric element actuator around the X axis, the Y axis, and the Z axis for minute rotation and the X axis direction, Y.
A fine movement mechanism for performing a small movement in the axial direction, and a coarse movement mechanism capable of moving up and down in the Z axis direction and moving in the X axis and Y axis directions in a horizontal plane,
The origin of the sample stage in the horizontal and horizontal directions of the X-axis and Y-axis, and the origin of the rotation around the Z-axis is detected, and the back surface of the sample is detected and rotated in the direction of rotation around the X-axis and the Y-axis (tilt of the sample stage). Since the sample stage is directly measured by the air micrometer as the amount measurement position, highly accurate origin detection and rotation amount measurement that are less susceptible to magnetic fields and temperature become possible. In addition, since the origin detection and position measurement are managed by the air micro by the difference between the pressure due to the gap between the sample table and the reference pressure, the number of cables such as sensors for that is reduced, and the load when moving the wafer positioning device can be reduced. Become.
【００１２】[0012]
【実施例】以下、本発明の実施例を図１，図２により説
明する。Embodiments of the present invention will be described below with reference to FIGS.
【００１３】図１，図２において本発明のウェハ位置決
め装置は、試料台９とそれを、Ｘ軸，Ｙ軸方向の微小移
動とＸ軸，Ｙ軸，Ｚ軸回りの微小回転させる微動機構１
０とＺ軸方向の上下移動を行う粗Ｚ機構１１とＸ軸，Ｙ
軸方向の大きな移動を行う粗動機構１２とＸ軸方向の位
置を計測するためのＸレーザ測長器１３と、Ｙ軸方向の
位置とＺ軸回りの回転量を計測するＹレーザ測長器１４
で構成されている。1 and 2, the wafer positioning apparatus of the present invention comprises a sample stage 9 and a fine movement mechanism 1 for finely moving the sample stage 9 in the X-axis and Y-axis directions and finely rotating it around the X-axis, Y-axis and Z-axis.
0 and the coarse Z mechanism 11 which moves up and down in the Z-axis direction and the X-axis, Y
A coarse movement mechanism 12 that makes a large movement in the axial direction, an X laser length measuring device 13 for measuring the position in the X axis direction, and a Y laser length measuring device for measuring the position in the Y axis direction and the amount of rotation around the Z axis. 14
It is composed of.
【００１４】さらに試料台９は、ウェハ１を真空吸着し
保持するウェハチャック２とそれを保持しＺ軸回りに回
転移動が可能な粗θテーブル３とそれを駆動する粗θ駆
動系４とその他付加機能のためのセンサ５とレーザ測長
のためのＸミラー１５とＹミラー１６で構成されてい
る。また微動機構１０は、試料台９をＸ軸回り，Ｙ軸回
りで微小回転を行うために弾性ヒンジを備えた３本のＺ
圧電素子アクチュエータ６とＺ軸回りの微小回転及びＹ
軸方向の微小移動を行うために弾性ヒンジを備えた２本
のＹ圧電素子アクチュエータ７とＸ軸方向の微小移動を
行うために弾性ヒンジを備えたＸ圧電素子アクチュエー
タ８と、試料台９のＸ軸方向の原点とＹ軸及びＺ軸回り
の原点を検出するＸエアマイクロメータ１７及び２個の
Ｙエアマイクロメータ１８と、ウェハチャック２の裏側
に配置したＸ軸，Ｙ軸回りの原点を検出する３個のＺエ
アマイクロメータ１９で構成されている。Further, the sample table 9 includes a wafer chuck 2 that holds the wafer 1 by vacuum suction, a rough θ table 3 that holds the wafer 1 and can rotate about the Z axis, and a rough θ drive system 4 that drives it. It is composed of a sensor 5 for an additional function, an X mirror 15 and a Y mirror 16 for laser measurement. Further, the fine movement mechanism 10 includes three Zs provided with elastic hinges for performing minute rotations around the sample stage 9 around the X axis and the Y axis.
Piezoelectric element actuator 6 and minute rotation around Z axis and Y
Two Y piezoelectric element actuators 7 provided with elastic hinges for performing a minute movement in the axial direction, X piezoelectric element actuators 8 provided with elastic hinges for performing a minute movement in the X-axis direction, and X of the sample table 9. An X air micrometer 17 and two Y air micrometers 18 for detecting the origin in the axial direction and the origins around the Y axis and the Z axis, and the origins around the X axis and the Y axis arranged on the back side of the wafer chuck 2 are detected. It is composed of three Z air micrometers 19.
【００１５】また粗動機構１０は、Ｘサーボモータ２２
とＹサーボモータ２０とＸ送りねじ２３とＹ送りねじ２
１で構成されている。その原点検出は、粗Ｘエアマイク
ロメータ２４，粗Ｙエアマイクロメータ２５で行う。The coarse movement mechanism 10 includes an X servo motor 22.
And Y servo motor 20, X feed screw 23 and Y feed screw 2
It is composed of 1. The origin detection is performed by the coarse X air micrometer 24 and the coarse Y air micrometer 25.
【００１６】したがって、本実施例によれば、磁界の影
響を受けずに原点を検出することが可能となるので、高
精度な原点検出が可能となり、絶対位置決め精度の向上
が可能となる。また本位置決め装置に備えられたＸエア
マイクロメータ１７，Ｙエアマイクロメータ１８，Ｚエ
アマイクロメータ１９自体の構造が単純で、エアーの流
路となるチューブが細く軟質であるため負荷が減少し、
位置決め精度向上に有利となる。Therefore, according to this embodiment, the origin can be detected without being affected by the magnetic field, so that the origin can be detected with high accuracy and the absolute positioning accuracy can be improved. In addition, the structure of the X air micrometer 17, the Y air micrometer 18, and the Z air micrometer 19 themselves provided in the positioning device is simple, and the load is reduced because the tube serving as an air flow path is thin and soft.
This is advantageous for improving the positioning accuracy.
【００１７】またＺエアマイクロメータ１９の様に、被
位置決め対象を検出対象を介さずに直接検出することが
できるので、温度や湿度の影響を受けることなく高精度
な原点検出が可能となる。Further, like the Z-air micrometer 19, the object to be positioned can be directly detected without passing through the object to be detected, so that highly accurate origin detection can be performed without being affected by temperature and humidity.
【００１８】さらに各軸のエアマイクロメータは、原点
検出のみならず数百μｍ内で位置決め対象を高精度に位
置計測することが可能となる。Furthermore, the air micrometer for each axis can not only detect the origin but also measure the position of the positioning object with high accuracy within several hundreds of μm.
【００１９】[0019]
【発明の効果】本発明によれば、 １．位置決め装置に不可欠な原点の検出精度が向上し、
ウェハの高精度位置決めが可能となる。According to the present invention, 1. The detection accuracy of the origin, which is indispensable for the positioning device, has been improved.
High-precision positioning of the wafer becomes possible.
【００２０】２．ウェハを保持するウェハチャックの裏
面及び試料台の端面を直接検出することができるので、
マグネセンサ等の検出対象が不要となり、試料台の小型
化が可能となる。2. Since the back surface of the wafer chuck holding the wafer and the end surface of the sample table can be directly detected,
A detection target such as a magnet sensor is unnecessary, and the sample table can be downsized.
【００２１】３．試料台の位置計測ができるので、エア
マイクロメータと圧電素子アクチュエータの閉ループ制
御が可能となり、微小位置決めが容易になる。3. Since the position of the sample table can be measured, closed loop control of the air micrometer and the piezoelectric element actuator becomes possible, and micropositioning becomes easy.
【図１】本発明の実施例の平面図である。FIG. 1 is a plan view of an embodiment of the present invention.
【図２】本発明の実施例の正面図である。FIG. 2 is a front view of an embodiment of the present invention.
１…ウェハ、２…ウェハチャック、３…粗シータテーブ
ル、４…粗シータ駆動系、５…センサ、６…Ｚ圧電素子
アクチュエータ、７…Ｙ圧電素子アクチュエータ、８…
Ｘ圧電素子アクチュエータ、９…試料台、１０…微動機
構、１１…粗Ｚ機構、１２…粗動機構、１３…Ｘレーザ
測長器、１４…Ｙレーザ測長器、１５…Ｘミラー、１６
…Ｙミラー、１７…Ｘエアマイクロメータ、１８…Ｙエ
アマイクロメータ、１９…Ｚエアマイクロメータ、２０
…Ｙサーボモータ、２１…Ｙ送りねじ、２２…Ｘサーボ
モータ、２３…Ｘ送りねじ、２４…粗Ｘエアマイクロメ
ータ、２５…粗Ｙエアマイクロメータ。1 ... Wafer, 2 ... Wafer chuck, 3 ... Coarse theta table, 4 ... Coarse theta drive system, 5 ... Sensor, 6 ... Z piezoelectric element actuator, 7 ... Y piezoelectric element actuator, 8 ...
X piezoelectric element actuator, 9 ... Sample stage, 10 ... Fine movement mechanism, 11 ... Coarse Z mechanism, 12 ... Coarse movement mechanism, 13 ... X laser length measuring device, 14 ... Y laser length measuring device, 15 ... X mirror, 16
... Y mirror, 17 ... X air micrometer, 18 ... Y air micrometer, 19 ... Z air micrometer, 20
Y servo motor, 21 Y feed screw, 22 X servo motor, 23 X feed screw, 24 coarse X air micrometer, 25 coarse Y air micrometer.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 8831−4Ｍ Ｈ０１Ｌ 21/30 ３４１ Ｌ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location 8831-4M H01L 21/30 341 L
Claims (4)
て、エアマイクロメータを当該装置の機械的原点位置の
検出装置とするよう構成したことを特徴とする位置決め
装置。1. A positioning device for positioning a date positioning object, wherein an air micrometer is used as a device for detecting a mechanical origin position of the device.
位置決め対象を保持するチャック自体の位置を直接検出
し、装置の原点とすることを特徴とする位置決め装置。2. The positioning device according to claim 1, wherein the position of the chuck itself holding the object to be positioned is directly detected and used as the origin of the device.
個用いることにより、回転中心を保有しない位置決め装
置の回転方向の原点検出を行い、さらにその回転量を計
測することを特徴とする位置決め装置。3. A positioning device characterized by using a plurality of the air micrometer according to claim 1 to detect the origin of the rotation direction of a positioning device which does not have a rotation center and to measure the amount of rotation. .
所有することを特徴とする半導体製造装置。4. A semiconductor manufacturing apparatus having the positioning device according to claim 1, 2, or 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP643693A JPH06216220A (en) | 1993-01-19 | 1993-01-19 | Positioning apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP643693A JPH06216220A (en) | 1993-01-19 | 1993-01-19 | Positioning apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06216220A true JPH06216220A (en) | 1994-08-05 |
Family
ID=11638353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP643693A Pending JPH06216220A (en) | 1993-01-19 | 1993-01-19 | Positioning apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06216220A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10216999A1 (en) * | 2002-04-16 | 2003-11-06 | Thomson Brandt Gmbh | ECC block encoders and decoders with reduced RAM requirements |
| US7136146B2 (en) | 2003-05-09 | 2006-11-14 | Rohm Co., Ltd | Exposure device and exposure method |
| CN113206614A (en) * | 2021-05-06 | 2021-08-03 | 上海隐冠半导体技术有限公司 | Exercise device |
-
1993
- 1993-01-19 JP JP643693A patent/JPH06216220A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10216999A1 (en) * | 2002-04-16 | 2003-11-06 | Thomson Brandt Gmbh | ECC block encoders and decoders with reduced RAM requirements |
| US7136146B2 (en) | 2003-05-09 | 2006-11-14 | Rohm Co., Ltd | Exposure device and exposure method |
| CN113206614A (en) * | 2021-05-06 | 2021-08-03 | 上海隐冠半导体技术有限公司 | Exercise device |
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