JPH06213844A - Measuring apparatus of concentration of gas - Google Patents
Measuring apparatus of concentration of gasInfo
- Publication number
- JPH06213844A JPH06213844A JP31443292A JP31443292A JPH06213844A JP H06213844 A JPH06213844 A JP H06213844A JP 31443292 A JP31443292 A JP 31443292A JP 31443292 A JP31443292 A JP 31443292A JP H06213844 A JPH06213844 A JP H06213844A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- sensor
- measuring device
- gas concentration
- passage means
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005259 measurement Methods 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 239000000428 dust Substances 0.000 claims abstract description 13
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 12
- 230000001681 protective effect Effects 0.000 claims description 20
- 230000005484 gravity Effects 0.000 claims description 5
- 239000003054 catalyst Substances 0.000 abstract description 3
- 239000000470 constituent Substances 0.000 abstract 2
- 230000004075 alteration Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 14
- 230000007613 environmental effect Effects 0.000 description 6
- 238000009423 ventilation Methods 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000004332 deodorization Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004092 self-diagnosis Methods 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、主としてＯ2、Ｏ3、Ｃ
Ｏ、Ｈ2Ｓ、ＮＯ2等の環境ガスの濃度を測定するガス濃
度測定装置に関するものであり、詳しくは、環境ガスの
雰囲気中で電気抵抗が変化する性質を利用した半導体等
をセンサーに用いたガス濃度測定装置、特に、低濃度の
測定を要求されるガス濃度測定装置に関するものであ
る。BACKGROUND OF THE INVENTION The present invention is mainly applied to O 2 , O 3 and C.
The present invention relates to a gas concentration measuring device for measuring the concentration of an environmental gas such as O, H 2 S, and NO 2 , and more specifically, it uses a semiconductor or the like for the sensor, which utilizes the property that electric resistance changes in the atmosphere of the environmental gas. The present invention relates to a gas concentration measuring device, and more particularly to a gas concentration measuring device required to measure a low concentration.
【０００２】[0002]
【従来技術とその問題点】従来より、一般的な工業分野
において、有害ガス等の試料ガスを測定する装置として
赤外線吸収方式、紫外線吸収方式等のガス濃度測定装置
が知られているが、試料ガス中のガス成分を選択的に測
定できる等の測定値の信頼性に優れているものの、光学
的装置やそれ等に付随する機械部品等の使用により装置
本体が比較的大型化し、又、高価となることから、環境
ガスの雰囲気中で電気抵抗が変化する性質を利用した半
導体等を測定部のセンサーに用いた簡易構造のガス濃度
測定装置が用いられている。2. Description of the Related Art Conventionally, a gas concentration measuring device such as an infrared absorption system or an ultraviolet absorption system has been known as a device for measuring a sample gas such as a harmful gas in a general industrial field. Although it has excellent reliability of measured values, such as being able to selectively measure the gas components in the gas, the device itself becomes relatively large and expensive due to the use of optical devices and mechanical parts accompanying them. Therefore, a gas concentration measuring device having a simple structure is used, in which a semiconductor or the like, which utilizes the property that electric resistance changes in an atmosphere of environmental gas, is used as a sensor of a measuring unit.
【０００３】然し乍ら、この種のガス濃度測定装置にお
ける半導体素子構造等のセンサーは作用時間や温度、湿
度、共存ガス、微塵等の汚れ成分の付着等が測定値に大
きく影響し、特に公的に規制された低濃度の環境ガスを
測定の対象とする場合には、測定値の信頼性等に問題点
が生じていた。However, in a sensor such as a semiconductor element structure in this type of gas concentration measuring device, the measured value is greatly affected by the operating time, temperature, humidity, coexisting gas, adhesion of contaminants such as fine dust, etc. When the regulated low-concentration environmental gas is targeted for measurement, there is a problem in the reliability of the measured value.
【０００４】[0004]
【発明の目的】本発明の目的は、前述の問題点に鑑み
て、半導体等を測定部のセンサーに用いたガス濃度測定
装置において、測定値の補正、詳しくは、基準点（ゼロ
ガス点）の変動の補正を可能とさせ、又、同時にガス処
理装置におけるガス分解剤の寿命判定器等の用途にも用
いることができるガス濃度測定装置と、測定値に影響す
る微塵等の汚れ成分の付着等を効果的に防止できるガス
濃度測定装置を提供するものである。SUMMARY OF THE INVENTION In view of the above-mentioned problems, an object of the present invention is to correct a measured value in a gas concentration measuring apparatus using a semiconductor or the like as a sensor of a measuring section, more specifically, to correct a reference point (zero gas point). A gas concentration measuring device that enables correction of fluctuations and at the same time can also be used as a life determining device for gas decomposing agents in gas processing devices, and the attachment of dirt components such as fine dust that affect the measured values. The present invention provides a gas concentration measuring device capable of effectively preventing the above.
【０００５】[0005]
【発明の構成】本発明のガス濃度測定装置は、ガス導入
口とガス排出口の間へガス流路手段を形成させ、ガス流
路手段内へ測定部と接続させた半導体素子構造等のセン
サーを配設させたガス濃度測定装置であり、特許請求の
範囲の請求項１の構成は、ガス流路手段内へガスの流通
方向をガス導入口からガス排出口又はガス排出口からガ
ス導入口へと選択的に変更できる適宜な送気手段を配設
させ、ガス流路手段内のセンサーとガス排出口との間へ
はガス分解処理部を設けた構成であり、特許請求の範囲
の請求項２の構成は、ガス導入口を微塵の侵入を低減さ
せる小径孔で形設させた構成であり、特許請求の範囲の
請求項３の構成は、測定部のセンサーの周囲へ通気口を
有した保護部材を設け、保護部材の通気口をガスの流通
方向に対して直交方向に開口させた構成であり、特許請
求の範囲の請求項４の構成は、測定部のセンサーの周囲
へ通気口を有した保護部材を設け、保護部材の通気口を
重力方向に開口させた構成であり、特許請求の範囲の請
求項５の構成は、ガス排出口を下方位置に配設させた構
成である。The gas concentration measuring device of the present invention is a sensor such as a semiconductor device structure in which a gas passage means is formed between a gas inlet and a gas outlet and connected to a measuring portion in the gas passage means. Is a gas concentration measuring device having the above-mentioned arrangement, wherein the configuration of claim 1 is such that the gas flowing direction into the gas passage means is from the gas inlet to the gas outlet or from the gas outlet to the gas inlet. A suitable gas supply means that can be selectively changed to is disposed, and a gas decomposition processing section is provided between the sensor and the gas discharge port in the gas flow path means. The configuration of claim 2 is a configuration in which the gas introduction port is formed with a small diameter hole that reduces the intrusion of fine dust, and the configuration of claim 3 of the claims has a ventilation port around the sensor of the measurement unit. The protective member is installed, and the vent of the protective member is orthogonal to the gas flow direction. According to the configuration of claim 4 of the claims, a protective member having a ventilation hole is provided around the sensor of the measurement unit, and the ventilation hole of the protection member is opened in the gravity direction. The configuration of claim 5 of the claims is a configuration in which the gas discharge port is arranged at a lower position.
【０００６】[0006]
【実施例】斯る目的を達成した本発明を以下実施例の図
面によって説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention which has achieved the above object will be described below with reference to the drawings of the embodiments.
【０００７】図１は本発明の特許請求の範囲の請求項１
のガス濃度測定装置の概要図であり、図２は本発明の特
許請求の範囲の請求項２のガス濃度測定装置の概要図で
あり、図３は本発明の特許請求の範囲の請求項３のガス
濃度測定装置の要部を示す概要図であり、図４は本発明
の特許請求の範囲の請求項４のガス濃度測定装置の要部
を示す概要図であり、図５は本発明の特許請求の範囲の
請求項５のガス濃度測定装置の概要図であり、図６は本
発明のガス濃度測定装置の使用説明図である。FIG. 1 shows the scope of claim 1 of the present invention.
2 is a schematic diagram of the gas concentration measuring device of FIG. 2, FIG. 2 is a schematic diagram of the gas concentration measuring device of claim 2 of the present invention, and FIG. 3 is a diagram of claim 3 of the present invention. 5 is a schematic diagram showing a main part of the gas concentration measuring device of FIG. 4, FIG. 4 is a schematic diagram showing a main part of the gas concentration measuring device of claim 4 of the present invention, and FIG. It is a schematic diagram of the gas concentration measuring device of Claim 5 of a claim, and FIG. 6 is a usage explanatory drawing of the gas concentration measuring device of this invention.
【０００８】本発明は、主としてＯ2、Ｏ3、ＣＯ、Ｈ2
Ｓ、ＮＯ2等の環境ガス、特に低濃度の環境ガスの測定
を要求される半導体等のセンサー２ａを用いたガス濃度
測定装置１に関するものであり、特許請求の範囲の請求
項１に記載のものは、ガス導入口１ａとガス排出口１ｂ
の間へガス流路手段３を形成させ、該ガス流路手段３内
へ測定部２と接続させた半導体素子構造等のセンサー２
ａを配設させたガス濃度測定装置１において、前記ガス
流路手段３内へガスの流通方向をガス導入口１ａからガ
ス排出口１ｂ又はガス排出口１ｂからガス導入口１ａへ
と選択的に変更できる適宜な送気手段３ａを配設させる
と共に、前記ガス流路手段３内のセンサー２ａとガス排
出口１ｃとの間へはガス分解処理部４を設けたものであ
り、特許請求の範囲の請求項２に記載のものは、ガス導
入口１ａとガス排出口１ｂの間へガス流路手段３を形成
させ、該ガス流路手段３内へ測定部２と接続させた半導
体素子構造等のセンサー２ａを配設させたガス濃度測定
装置１において、前記ガス導入口１ａを微塵の侵入を低
減させる小径孔で形設させものであり、特許請求の範囲
の請求項３に記載のものは、ガス導入口１ａとガス排出
口１ｂの間へガス流路手段３を形成させ、該ガス流路手
段３内へ測定部２と接続させた半導体素子構造等のセン
サー２ａを配設させたガス濃度測定装置１において、前
記測定部２のセンサー２ａの周囲へ通気口５ａを有した
保護部材５を設けると共に、該保護部材５の通気口５ａ
をガスの流通方向に対して直交方向に開口させたもので
あり、特許請求の範囲の請求項４に記載のものは、ガス
導入口１ａとガス排出口１ｂの間へガス流路手段３を形
成させ、該ガス流路手段３内へ測定部２と接続させた半
導体素子構造等のセンサー２ａを配設させたガス濃度測
定装置１において、前記測定部２のセンサー２ａの周囲
へ通気口５ａを有した保護部材５を設けると共に、該保
護部材５の通気口５ａを重力方向に開口させたものであ
り、特許請求の範囲の請求項５に記載のものは、ガス導
入口１ａとガス排出口１ｂの間へガス流路手段３を形成
させ、該ガス流路手段３内へ測定部２と接続させた半導
体素子構造等のセンサー２ａを配設させたガス濃度測定
装置１において、前記ガス排出口１ｂを下方位置に配設
させたものである。The present invention is mainly based on O2, O3, CO, H2
S, NO2Of environmental gas such as, especially low concentration environmental gas
Gas concentration using the sensor 2a such as semiconductor that requires
Claims relating to the measuring device 1
Item 1 has a gas inlet 1a and a gas outlet 1b.
The gas flow path means 3 is formed between
Sensor 2 such as a semiconductor device structure connected to the measuring unit 2
In the gas concentration measuring device 1 provided with a,
The flow direction of the gas into the flow path means 3 is controlled from the gas inlet 1a.
Gas outlet 1b or gas outlet 1b to gas inlet 1a
And an appropriate air supply means 3a that can be selectively changed is provided.
At the same time, the sensor 2a in the gas flow path means 3 and the gas exhaust
A gas decomposition treatment section 4 is provided between the outlet 1c and the outlet.
According to Claim 2 of the claims,
The gas flow path means 3 is formed between the inlet 1a and the gas outlet 1b.
And the semiconductor part connected to the measuring part 2 into the gas flow path means 3.
Gas concentration measurement with sensor 2a such as body element structure
In the device 1, the gas inlet 1a can reduce the intrusion of fine dust.
It is formed with a small diameter hole to reduce,
The gas inlet port 1a and the gas exhaust port according to claim 3
The gas flow path means 3 is formed between the openings 1b, and the gas flow path means 3 is formed.
A semiconductor device structure or the like connected to the measuring unit 2 is connected to the stage 3.
In the gas concentration measuring device 1 provided with the sir 2a,
A ventilation port 5a was provided around the sensor 2a of the measurement unit 2.
The protective member 5 is provided and the ventilation port 5a of the protective member 5 is provided.
Is opened in a direction orthogonal to the gas flow direction.
Yes, and what is described in claim 4 is a gas.
Form the gas flow path means 3 between the inlet 1a and the gas outlet 1b.
And a half connected to the measuring unit 2 in the gas flow path means 3.
Gas concentration measurement with a sensor 2a such as a conductor element structure
In the measuring device 1, around the sensor 2a of the measuring unit 2
A protective member 5 having a ventilation hole 5a is provided and
The vent 5a of the protective member 5 is opened in the direction of gravity.
According to claim 5 of the claims,
The gas flow path means 3 is formed between the inlet 1a and the gas outlet 1b.
And the semiconductor part connected to the measuring part 2 into the gas flow path means 3.
Gas concentration measurement with sensor 2a such as body element structure
In the device 1, the gas outlet 1b is arranged at the lower position.
It was made.
【０００９】即ち、本発明の請求項１乃至請求項５に記
載のガス濃度測定装置１は、例えば、図６に図示の如
く、オゾン発生器等のガス生成装置とガス分解剤等を用
いたガス分解処理装置から成るガス処理装置Ｃを接続さ
せた密閉室Ａの内部へ配設させ、該密閉室Ａ内において
ガス処理装置Ｃにより生成させたＯ3等の処理ガスによ
り被処理物Ｂを殺菌処理や脱臭処理させる際に、その処
理中又は処理後のガス濃度を連続的に監視したり、或い
は密閉室Ａ内等における各種の装置（図示せず）からの
ガスリークを監視するセンサーユニットとして用いるも
のであり、図１乃至図５に図示の如く、ガス導入口１ａ
及びガス排出口１ｂの間に形成させた適宜なガス流路手
段３と、該ガス流路手段３内へ配設させたファン等の送
気手段３ａ及び半導体素子構造等のセンサー２ａから構
成される。That is, the gas concentration measuring device 1 according to any one of claims 1 to 5 of the present invention uses a gas generating device such as an ozone generator and a gas decomposing agent as shown in FIG. 6, for example. The object B to be treated is disposed inside a closed chamber A to which a gas treatment device C composed of a gas decomposition treatment device is connected, and the treatment gas such as O 3 generated by the gas treatment device C in the closed chamber A causes the object B to be treated. As a sensor unit that continuously monitors the gas concentration during or after the sterilization process or deodorization process, or monitors gas leaks from various devices (not shown) in the closed chamber A, etc. The gas inlet 1a is used as shown in FIGS. 1 to 5.
And an appropriate gas passage means 3 formed between the gas discharge port 1b, an air supply means 3a such as a fan and a sensor 2a such as a semiconductor element structure, which are arranged in the gas passage means 3. It
【００１０】前記センサー２ａは抵抗器等を用いた解析
回路、制御回路等から成る測定部２へ電気的に接続させ
た、例えば、ＳｎＯ2、ＺｎＯ、Ｆｅ2Ｏ2等の金属酸化
物半導体から成り、該センサー２ａの表面へ試料ガスを
接触させ、該センサー２ａの電気抵抗値（電気伝導率）
の変化に基づいて連続的に濃度測定を行うものである。[0010] analysis circuit using the sensor 2a resistors, etc., to the measurement unit 2 and a control circuit, and the like were electrically connected, for example, SnO 2, ZnO, a metal oxide semiconductor such as Fe 2 O 2 The sample gas is brought into contact with the surface of the sensor 2a, and the electrical resistance value (electrical conductivity) of the sensor 2a
The concentration is continuously measured based on the change of.
【００１１】又、本発明のガス濃度測定装置１は、例え
ば、図２及び図５に図示の如く、金属製の外装ケーシン
グ等を用いると共にガス流路手段３と電源部や測定部２
等の内部装置とを気密状態で区画し、強い酸化力等を有
した試料ガスが電源部や測定部２等の内部装置に対して
腐食等の悪影響を与えることのない様に構成させるもの
である。Further, the gas concentration measuring apparatus 1 of the present invention uses a metal outer casing or the like as shown in FIGS. 2 and 5, and at the same time, the gas flow path means 3, the power source section and the measuring section 2 are used.
It is configured so as to be airtightly separated from internal devices such as, and so that the sample gas having a strong oxidizing power does not adversely affect internal devices such as the power supply unit and the measuring unit 2 such as corrosion. is there.
【００１２】特許請求の範囲の請求項１に記載のガス濃
度測定装置１は、特に低濃度ガスの測定において、より
測定値の信頼性を向上させるために測定値の補正を行う
ことが可能な構成を有したものであり、前述の構成のガ
ス濃度測定装置１において、図１に図示の如く、ガス流
路手段３内に配設させたセンサー２ａとガス排出口１ｂ
との間へ触媒等を用いたフィルター装置等のガス分解処
理部４を備えたものである。The gas concentration measuring device 1 according to claim 1 can correct the measured value in order to further improve the reliability of the measured value particularly in the measurement of a low concentration gas. In the gas concentration measuring device 1 having the above-described configuration, as shown in FIG. 1, the sensor 2a and the gas exhaust port 1b arranged in the gas flow path means 3 are provided.
And a gas decomposition processing section 4 such as a filter device using a catalyst or the like.
【００１３】本発明のガス濃度測定装置１により試料ガ
スの濃度測定を行うには、先ず、電源部のスイッチを手
動操作又は遠隔操作等でＯＮ状態とさせ、測定部２の回
路及び送気手段３ａを作動させて、試料ガスをガス導入
口１ａからガス排出口１ｂへ流通させる。In order to measure the concentration of the sample gas by the gas concentration measuring device 1 of the present invention, first, the switch of the power source section is turned on by a manual operation or a remote operation, and the circuit of the measuring section 2 and the air feeding means. 3a is operated to allow the sample gas to flow from the gas inlet 1a to the gas outlet 1b.
【００１４】前記ガス導入口１ａから導入させた試料ガ
スはセンサー２ａの表面に接触し、該センサー２ａの電
気抵抗値の変化により濃度が連続的に測定されると共
に、測定値は表示部等で数値化されて表示され、次い
で、前記センサー２ａを通過した試料ガスは触媒等を用
いたガス分解処理部４を通過し、清浄化させた処理ガス
としてガス排出口１ｂから排出されるものである。The sample gas introduced from the gas inlet 1a comes into contact with the surface of the sensor 2a, the concentration is continuously measured by the change of the electric resistance value of the sensor 2a, and the measured value is displayed on the display part or the like. The sample gas that has been digitized and displayed and then passed through the sensor 2a passes through the gas decomposition processing section 4 using a catalyst or the like, and is discharged from the gas discharge port 1b as a cleaned processing gas. .
【００１５】然し乍ら、この際の測定値は前記センサー
２ａの予め設定された基準点（ゼロガス点）に対する電
気抵抗値の変化に基づいており、一方、該センサー２ａ
の感度は所定時間の操作で、温度、湿度、共存ガス、汚
れ成分の付着等の要因により変化するために信頼性に乏
しいものである。However, the measured value at this time is based on the change of the electric resistance value of the sensor 2a with respect to a preset reference point (zero gas point), while the sensor 2a
The sensitivity of (3) is poor in reliability because it varies depending on factors such as temperature, humidity, coexisting gas, and adhesion of dirt components after a predetermined time of operation.
【００１６】本発明のガス濃度測定装置１は、前述のガ
ス濃度測定の前動作又は中間動作として、前記送気手段
３ａを逆作動させてガス排出口１ｂから試料ガスを導入
させることにより、試料ガスをガス分解処理部４へ通過
させて測定対象とするガス成分を除去した処理ガスを生
成させ、該処理ガスの濃度の測定値により基準点（ゼロ
ガス点）の補正を行うことができる。In the gas concentration measuring device 1 of the present invention, as a pre-operation or an intermediate operation of the above-mentioned gas concentration measurement, the gas feeding means 3a is reversely operated and the sample gas is introduced from the gas outlet 1b, so that the sample It is possible to correct the reference point (zero gas point) by passing the gas through the gas decomposition processing unit 4 to generate a processing gas from which the gas component to be measured is removed and measuring the concentration of the processing gas.
【００１７】又、本発明のガス濃度測定装置１は、ガス
濃度測定装置としての機能と共に図６に示したガス処理
装置Ｃに用いたガス分解剤の寿命判定器としての機能を
も有しており、所定時間に亘る密閉室Ａ内のガス処理操
作の過程で、ガス処理装置Ｃの性能を監視することもで
きる。Further, the gas concentration measuring apparatus 1 of the present invention has a function as a gas concentration measuring apparatus as well as a function as a life determining device for the gas decomposing agent used in the gas processing apparatus C shown in FIG. Therefore, the performance of the gas processing apparatus C can be monitored in the course of the gas processing operation in the closed chamber A for a predetermined time.
【００１８】更に、本発明のガス濃度測定装置１は、前
述の使用は勿論のこと、前記送気手段３ａを逆作動させ
てガス排出口１ｂからガス分解処理部４へ試料ガスを通
過させ、この操作を繰り返すことにより、高濃度ガスと
の接触によるセンサー２ａの負担を低減させて、センサ
ー２ａの寿命を延ばすことが可能であり、加えて、送気
手段３ａを逆作動させて処理ガスの濃度測定を行うこと
により、ガス分解処理部４の性能の判定、即ちガス濃度
測定装置１の自己診断を行うこともできる。Further, in the gas concentration measuring apparatus 1 of the present invention, not only the above-mentioned use but also the gas feeding means 3a is reversely operated to pass the sample gas from the gas outlet 1b to the gas decomposition processing section 4, By repeating this operation, it is possible to reduce the load on the sensor 2a due to contact with the high-concentration gas and prolong the service life of the sensor 2a. In addition, the gas supply means 3a is reversely operated to reduce the amount of processing gas. By measuring the concentration, the performance of the gas decomposition processing unit 4 can be judged, that is, the self-diagnosis of the gas concentration measuring device 1 can be performed.
【００１９】特許請求の範囲の請求項２乃至請求項５に
記載のガス濃度測定装置１は、主にセンサー２ａの感度
を低下させる微塵等の汚れ成分の付着を防止させる各種
の構成を有したもので、図２乃至図５に図示の如く、ガ
ス導入口１ａとガス排出口１ｂの間へ適宜なガス流路手
段３を形成させ、該ガス流路手段３内へ送気手段３ａを
配設させると共に測定部２と接続させた半導体素子構造
等のセンサー２ａを配設させた構造のものであり、前記
ガス流路手段３内へ試料ガスを流通させる過程でセンサ
ー２ａの電気抵抗値の変化に基づき連続的に濃度測定を
行うガス濃度測定装置１である。The gas concentration measuring device 1 according to claims 2 to 5 of the claims has various constitutions mainly for preventing adhesion of dirt components such as fine dust which lowers the sensitivity of the sensor 2a. As shown in FIGS. 2 to 5, an appropriate gas passage means 3 is formed between the gas inlet 1a and the gas outlet 1b, and the air supply means 3a is installed in the gas passage means 3. The sensor 2a has a structure such as a semiconductor element structure which is installed and connected to the measuring unit 2. The electric resistance value of the sensor 2a is changed in the process of flowing the sample gas into the gas flow path means 3. The gas concentration measuring device 1 continuously measures the concentration based on the change.
【００２０】特許請求の範囲の請求項２に記載のガス濃
度測定装置１は、前述の構成のガス濃度測定装置１にお
いて、図２に図示の如く、前記ガス導入口１ａを、例え
ば、外装ケーシング等に形成させた直径３mm程度の小径
孔で形設させることにより、試料ガス中に含まれる微塵
の侵入を極めて小量に至るまで低減させたものである。
又、この場合、前記ガス排出口１ｂはスリット形状等の
微塵の排出を助長させる様に可能な限り大きく形設させ
ることが好ましい。The gas concentration measuring apparatus 1 according to claim 2 is the same as the gas concentration measuring apparatus 1 having the above-mentioned configuration, as shown in FIG. By forming a small-diameter hole having a diameter of about 3 mm formed in the same or the like, the intrusion of fine dust contained in the sample gas is reduced to an extremely small amount.
Further, in this case, it is preferable that the gas discharge port 1b is formed as large as possible so as to promote discharge of fine dust such as a slit shape.
【００２１】特許請求の範囲の請求項３に記載のガス濃
度測定装置１は、前述の構成のガス濃度測定装置１にお
いて、図３の要部概要図に図示の如く、前記センサー２
ａの周囲へ通気口５ａを有した合成樹脂、金属等の耐ガ
ス性の保護部材５を設けると共に、該保護部材５の通気
口５ａをガスの流通方向に対して直交方向に開口させた
ものであり、本発明のガス濃度測定装置１においては、
試料ガスが直接的にセンサー２ａの表面に接触せずに、
保護部材５の近傍を通過する試料ガスの拡散により通気
口５ａを介して間接的に接触するので、微塵の付着等の
センサー２ａの表面状態の急激な変化を生じさせること
がなく、より精度の高いガス濃度測定を行うことができ
る。The gas concentration measuring device 1 according to claim 3 is the same as the gas concentration measuring device 1 having the above-mentioned structure, as shown in the schematic diagram of the main part of FIG.
A gas-resistant protective member 5 such as a synthetic resin or a metal having a vent hole 5a is provided around a, and the vent hole 5a of the protective member 5 is opened in a direction orthogonal to the gas flow direction. In the gas concentration measuring device 1 of the present invention,
The sample gas does not directly contact the surface of the sensor 2a,
Since the sample gas passing through the vicinity of the protective member 5 makes indirect contact via the vent hole 5a, a sharp change in the surface state of the sensor 2a such as adhesion of fine dust does not occur, and more accurate measurement is possible. A high gas concentration measurement can be performed.
【００２２】特許請求の範囲の請求項４に記載のガス濃
度測定装置１は、前述の構成のガス濃度測定装置１にお
いて、図４の要部概要図に図示の如く、前記センサー２
ａの周囲へ通気口５ａを有した保護部材５を設けると共
に、該保護部材５の通気口５ａを重力方向、即ち下向き
に開口させ、該保護部材５の通気口５ａからの微塵の侵
入を防止させたものである。The gas concentration measuring device 1 according to claim 4 is the same as the gas concentration measuring device 1 having the above-mentioned structure, as shown in the schematic diagram of the main part of FIG.
A protective member 5 having a vent 5a is provided around a, and the vent 5a of the protective member 5 is opened in the direction of gravity, that is, downward to prevent intrusion of fine dust from the vent 5a of the protective member 5. It was made.
【００２３】特許請求の範囲の請求項５に記載のガス濃
度測定装置１は、前述の構成のガス濃度測定装置１にお
いて、図５に図示の如く、前記ガス排出口１ｂを下方位
置に配設させることにより、ガスの流通方向を上方から
下方へと設定させたものであり、本発明のガス濃度測定
装置１においては、試料ガスと共に微塵が混入した場合
でも、濃度測定の操作過程で、前記ガス排出口１ｂより
自然に排出されるものである。The gas concentration measuring device 1 according to claim 5 is the same as the gas concentration measuring device 1 having the above-mentioned configuration, and the gas outlet 1b is arranged at a lower position as shown in FIG. By doing so, the flow direction of the gas is set from the upper side to the lower side, and in the gas concentration measuring device 1 of the present invention, even when fine dust is mixed with the sample gas, in the operation process of the concentration measurement, The gas is naturally discharged from the gas discharge port 1b.
【００２４】尚、本発明のガス濃度測定装置１は、例え
ば、前記保護部材５の通気口５ａを、請求項３に記載の
如く、ガスの流通方向に対して直交方向に開口させ、且
つ、請求項４に記載の如く、重力方向に開口させる等の
各請求項の構成を同時に付帯させることで、より効果的
にセンサー２ａを高感度に維持させることができる。In the gas concentration measuring device 1 of the present invention, for example, the vent hole 5a of the protective member 5 is opened in a direction orthogonal to the gas flow direction as described in claim 3, and As described in claim 4, the sensor 2a can be more effectively maintained with high sensitivity by simultaneously adding the configuration of each claim such as opening in the direction of gravity.
【００２５】[0025]
【発明の効果】本発明のガス濃度測定装置は、半導体素
子構造等のセンサーに用いたガス濃度測定装置におい
て、ガス流路手段内にガス分解処理部を設けたことによ
り、ガス処理装置におけるガス分解剤の寿命判定器等の
用途にも効果的に用いることができ、又、測定値の補正
を可能とさせて信頼性を向上させたものであり、更に、
ガス導入口の形状と保護部材及びガス排出口の配置によ
り、測定値に影響する微塵等の汚れ成分の付着等を効果
的に防止させ、より信頼性の高いガス濃度測定装置を提
供させた極めて有意義な発明である。The gas concentration measuring device of the present invention is a gas concentration measuring device used for a sensor such as a semiconductor element structure. It can be effectively used for applications such as a life determining device for decomposing agents, and it is possible to correct measured values to improve reliability.
The shape of the gas inlet and the arrangement of the protective member and the gas outlet effectively prevent the attachment of dirt components such as fine dust that affect the measured value, and provide a highly reliable gas concentration measuring device. It is a meaningful invention.
【図１】本発明の特許請求の範囲の請求項１のガス濃度
測定装置の概要図である。FIG. 1 is a schematic diagram of a gas concentration measuring device according to claim 1 of the present invention.
【図２】本発明の特許請求の範囲の請求項２のガス濃度
測定装置の概要図である。FIG. 2 is a schematic diagram of a gas concentration measuring device according to claim 2 of the present invention.
【図３】本発明の特許請求の範囲の請求項３のガス濃度
測定装置の要部を示す概要図である。FIG. 3 is a schematic diagram showing a main part of a gas concentration measuring device according to claim 3 of the present invention.
【図４】本発明の特許請求の範囲の請求項４のガス濃度
測定装置の要部を示す概要図である。FIG. 4 is a schematic diagram showing a main part of a gas concentration measuring device according to claim 4 of the present invention.
【図５】本発明の特許請求の範囲の請求項５のガス濃度
測定装置の概要図である。FIG. 5 is a schematic diagram of a gas concentration measuring device according to claim 5 of the present invention.
【図６】本発明のガス濃度測定装置の使用説明図であ
る。FIG. 6 is a diagram illustrating the use of the gas concentration measuring device of the present invention.
Ａ 密閉室 Ｂ 被処理物 Ｃ ガス処理装置 １ ガス濃度測定装置 １ａ ガス導入口 １ｂ ガス排出口 ２ 測定部 ２ａ センサー ３ ガス流路手段 ３ａ 送気手段 ４ ガス分解処理部 ５ 保護部材 ５ａ 通気口 A Closed chamber B Object to be treated C Gas treatment device 1 Gas concentration measuring device 1a Gas inlet 1b Gas outlet 2 Measuring part 2a Sensor 3 Gas flow path means 3a Air supply means 4 Gas decomposition processing part 5 Protective member 5a Vent
Claims (5)
段を形成させ、該ガス流路手段内へ測定部と接続させた
半導体素子構造等のセンサーを配設させたガス濃度測定
装置において、前記ガス流路手段内へガスの流通方向を
ガス導入口からガス排出口又はガス排出口からガス導入
口へと選択的に変更できる適宜な送気手段を配設させる
と共に、前記ガス流路手段内のセンサーとガス排出口と
の間へはガス分解処理部を設けたことを特徴とするガス
濃度測定装置。1. Gas concentration measurement in which a gas passage means is formed between a gas inlet and a gas outlet, and a sensor such as a semiconductor device structure connected to a measuring section is provided in the gas passage means. In the device, an appropriate gas supply means capable of selectively changing the flow direction of gas into the gas flow path means from a gas inlet to a gas outlet or from a gas outlet to a gas inlet is provided, and the gas is A gas concentration measuring device, characterized in that a gas decomposition processing section is provided between the sensor and the gas outlet in the flow path means.
段を形成させ、該ガス流路手段内へ測定部と接続させた
半導体素子構造等のセンサーを配設させたガス濃度測定
装置において、前記ガス導入口を微塵の侵入を低減させ
る小径孔で形設させたことを特徴とするガス濃度測定装
置。2. Gas concentration measurement in which a gas passage means is formed between a gas inlet and a gas outlet, and a sensor such as a semiconductor element structure connected to a measuring section is arranged in the gas passage means. In the device, the gas concentration measuring device is characterized in that the gas inlet is formed as a small diameter hole for reducing the intrusion of fine dust.
段を形成させ、該ガス流路手段内へ測定部と接続させた
半導体素子構造等のセンサーを配設させたガス濃度測定
装置において、前記測定部のセンサーの周囲へ通気口を
有した保護部材を設けると共に、該保護部材の通気口を
ガスの流通方向に対して直交方向に開口させたことを特
徴とするガス濃度測定装置。3. Gas concentration measurement in which a gas passage means is formed between a gas inlet and a gas outlet, and a sensor such as a semiconductor element structure connected to the measuring section is arranged in the gas passage means. In the device, the gas concentration measurement is characterized in that a protective member having a vent is provided around the sensor of the measuring unit, and the vent of the protective member is opened in a direction orthogonal to the gas flow direction. apparatus.
段を形成させ、該ガス流路手段内へ測定部と接続させた
半導体素子構造等のセンサーを配設させたガス濃度測定
装置において、前記測定部のセンサーの周囲へ通気口を
有した保護部材を設けると共に、該保護部材の通気口を
重力方向に開口させたことを特徴とするガス濃度測定装
置。4. Gas concentration measurement in which a gas passage means is formed between a gas inlet and a gas outlet, and a sensor such as a semiconductor device structure connected to a measuring section is arranged in the gas passage means. The gas concentration measuring device according to claim 1, wherein a protective member having a vent is provided around the sensor of the measuring unit, and the vent of the protective member is opened in the direction of gravity.
段を形成させ、該ガス流路手段内へ測定部と接続させた
半導体素子構造等のセンサーを配設させたガス濃度測定
装置において、前記ガス排出口を下方位置に配設させた
ことを特徴とするガス濃度測定装置。5. A gas concentration measurement in which a gas passage means is formed between a gas inlet and a gas outlet, and a sensor such as a semiconductor element structure connected to the measuring section is provided in the gas passage means. In the device, the gas concentration measuring device is characterized in that the gas outlet is arranged at a lower position.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31443292A JPH06213844A (en) | 1992-10-30 | 1992-10-30 | Measuring apparatus of concentration of gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31443292A JPH06213844A (en) | 1992-10-30 | 1992-10-30 | Measuring apparatus of concentration of gas |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06213844A true JPH06213844A (en) | 1994-08-05 |
Family
ID=18053289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31443292A Pending JPH06213844A (en) | 1992-10-30 | 1992-10-30 | Measuring apparatus of concentration of gas |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06213844A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008032607A (en) * | 2006-07-31 | 2008-02-14 | Kyushu Univ | Sensor for detecting foul odor of sulphide with high sensitivity |
| WO2008156096A1 (en) * | 2007-06-20 | 2008-12-24 | Nec Corporation | Gas component measurement apparatus |
| WO2012131944A1 (en) * | 2011-03-30 | 2012-10-04 | 富士通株式会社 | Atmospheric environment measuring device, atmospheric environment measuring method and atmospheric environment measuring system |
-
1992
- 1992-10-30 JP JP31443292A patent/JPH06213844A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008032607A (en) * | 2006-07-31 | 2008-02-14 | Kyushu Univ | Sensor for detecting foul odor of sulphide with high sensitivity |
| WO2008156096A1 (en) * | 2007-06-20 | 2008-12-24 | Nec Corporation | Gas component measurement apparatus |
| WO2012131944A1 (en) * | 2011-03-30 | 2012-10-04 | 富士通株式会社 | Atmospheric environment measuring device, atmospheric environment measuring method and atmospheric environment measuring system |
| US9395334B2 (en) | 2011-03-30 | 2016-07-19 | Fujitsu Limited | Atmospheric environment measuring apparatus, atmospheric environment measuring method and atmospheric environment measuring system |
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