JPH0620913A - Exposure method and device - Google Patents

Exposure method and device

Info

Publication number
JPH0620913A
JPH0620913A JP4178046A JP17804692A JPH0620913A JP H0620913 A JPH0620913 A JP H0620913A JP 4178046 A JP4178046 A JP 4178046A JP 17804692 A JP17804692 A JP 17804692A JP H0620913 A JPH0620913 A JP H0620913A
Authority
JP
Japan
Prior art keywords
film thickness
exposure
photoresist
wafer
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4178046A
Other languages
Japanese (ja)
Inventor
Hideaki Mito
秀明 水戸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP4178046A priority Critical patent/JPH0620913A/en
Publication of JPH0620913A publication Critical patent/JPH0620913A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Control Of Exposure In Printing And Copying (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form a desired size of a photo-resist pattern regardless of the change of photo-resist film thickness applied onto a wafer. CONSTITUTION:A pattern 34 for measuring the film thickness of a photo-resist is moved to a position, where a film-thickness measuring device 30 can measure film thickness, by a wafer stage 23, and the film thickness of the photo-resist 22 is measured. An exposure value required for forming the desired size of a photo-resist pattern is obtained from the relationship of the film thickness of the photo-resist previously obtained by an experiment and stored in a storage device 31 and the size of the photo-resist pattern and the relationship of the exposure value and the size of the photo-resist pattern by a micro-computer 32 regarding the film thickness of the photo-resist 22 acquired from the film- thickness measuring device 30. Accordingly, a wafer can be exposed by the exposure value, by which the desired size of the photo-resist pattern can be formed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、半導体製造分野におけ
る露光方法及び装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure method and apparatus in the field of semiconductor manufacturing.

【０００２】[0002]

【従来の技術】従来の半導体製造分野で用いられる露光
では、一般に縮小投影露光が用いられる。これは、レチ
クル（ホトマスク）に形成されている微細なパターンを
精度よくステップアンドリピート（繰り返し）で露光し
ていき、フォトレジストを塗布したウエハ全面にパター
ンを配列して焼き付ける。このような露光を可能にする
装置として、ステッパと呼ばれる縮小投影露光装置があ
る。2. Description of the Related Art In the exposure used in the conventional semiconductor manufacturing field, reduction projection exposure is generally used. In this method, a fine pattern formed on a reticle (photomask) is exposed by step-and-repeat (repetition) with high precision, and the pattern is arranged and baked on the entire surface of a wafer coated with a photoresist. As a device that enables such exposure, there is a reduction projection exposure device called a stepper.

【０００３】一般に、半導体装置では、半導体装置内に
構成されている素子の素子面積を小さくすると、素子内
の電気的抵抗および容量が減少し素子を稼働させるのに
必要な電力を少なくでき、ひいては半導体装置全体の消
費電力を少なくすることができる。また、配線を短くす
ることで信号伝達の遅延時間を短くし、半導体装置の動
作速度を速くできる。さらに、トランジスタのゲート長
を短くすると、トランジスタの駆動能力を向上させ得
る。このように半導体装置は半導体装置内に構成されて
いる素子及び配線等の単位面積当りの集積度を高くする
ことで、その性能を向上できる。このように素子を微細
化するための露光方法や露光装置の開発が活発に行われ
ている。In general, in a semiconductor device, when the element area of the element formed in the semiconductor device is reduced, the electric resistance and capacitance in the element are reduced, and the electric power required to operate the element can be reduced, and by extension, The power consumption of the entire semiconductor device can be reduced. Further, by shortening the wiring, the delay time of signal transmission can be shortened and the operation speed of the semiconductor device can be increased. Further, when the gate length of the transistor is shortened, the driving ability of the transistor can be improved. As described above, the performance of the semiconductor device can be improved by increasing the degree of integration per unit area of the elements, wirings, and the like that are configured in the semiconductor device. As described above, development of an exposure method and an exposure apparatus for miniaturizing an element has been actively conducted.

【０００４】従来の半導体装置製造に用いられる露光装
置の構成を図８に示す。１１は超高圧水銀ランプ等の光
源、１２は光源１１から放射された光束を有効に集光す
るための楕円鏡、次いで光路に沿つて順に、１３は赤外
光の大部分を透過し紫外光を反射するためのコールドミ
ラー、１４は風車状に開口部をつけた円盤からなり、回
転数を制御する事で露光時間だけ光源１１から光を通過
させるシャッター、１５は光束の配光特性を均一にする
ためのフライアイレンズ、１６は反射鏡、１７はコンデ
ンサレンズ、１８はレチクル、１９はレチクル１８上に
形成されたマスクパターン、２０は投影レンズ、２１は
ウエハ、２２はウエハ２１上に塗布されたフォトレジス
ト、２３はウエハステージである。FIG. 8 shows the structure of an exposure apparatus used for manufacturing a conventional semiconductor device. Reference numeral 11 is a light source such as an ultra-high pressure mercury lamp, 12 is an elliptical mirror for effectively collecting the light flux emitted from the light source 11, then 13 in sequence along the optical path, and 13 is a portion of the infrared light that transmits ultraviolet light. A cold mirror for reflecting the light, 14 is a disk with a windmill-shaped opening, and a shutter that allows light to pass from the light source 11 for the exposure time by controlling the rotation speed. 15 is a uniform luminous flux distribution characteristic. A fly-eye lens, 16 a reflecting mirror, 17 a condenser lens, 18 a reticle, 19 a mask pattern formed on the reticle 18, 20 a projection lens, 21 a wafer, 22 coating on the wafer 21. The photo resist 23 is a wafer stage.

【０００５】以上のように構成された半導体装置製造に
用いられる露光装置について、以下その動作を説明す
る。まず、光源１１から発した紫外光は、楕円鏡１２に
より集光される。この後、光路に沿つてコールドミラー
１３で紫外光が反射され、シャッター１４に到達する。
シャッター１４に到達した紫外光は、シャッター１４の
開口部が光路に来たときのみシャッター１４を通過す
る。次に、フライアイレンズ１５で配光特性を均一化さ
れ、反射鏡１６、コンデンサレンズ１７を経てウエハ２
１上に転写される。この時、紫外光はレチクル１８上の
マスクパターン１９の情報を備え、投影レンズ２０によ
り、ウエハ２１に投影される。所定の時間露光したのち
ウエハステージ２３を移動させ、スッテプアンドリピー
ト（繰り返し）露光によりウエハ全面にパターンを配列
して焼き付けていく。The operation of the exposure apparatus used for manufacturing the semiconductor device configured as described above will be described below. First, the ultraviolet light emitted from the light source 11 is condensed by the elliptical mirror 12. After that, the ultraviolet light is reflected by the cold mirror 13 along the optical path and reaches the shutter 14.
The ultraviolet light reaching the shutter 14 passes through the shutter 14 only when the opening of the shutter 14 comes to the optical path. Next, the light distribution characteristics are made uniform by the fly-eye lens 15, and the wafer 2 is passed through the reflecting mirror 16 and the condenser lens 17.
1 is transferred. At this time, the ultraviolet light has information on the mask pattern 19 on the reticle 18, and is projected onto the wafer 21 by the projection lens 20. After exposure for a predetermined time, the wafer stage 23 is moved, and patterns are arranged and printed on the entire surface of the wafer by step-and-repeat (repeated) exposure.

【０００６】この時、フォトレジスト膜厚にかかわらず
露光量は一定に設定されている。このためフォトレジス
トパターン寸法のフォトレジスト膜厚依存性に対し露光
量を変化させることができない。このため所望する寸法
をもつフォトレジストパターンを形成することができな
いという問題があった。At this time, the exposure amount is set constant regardless of the photoresist film thickness. Therefore, the exposure amount cannot be changed with respect to the photoresist film thickness dependence of the photoresist pattern size. Therefore, there is a problem that a photoresist pattern having a desired dimension cannot be formed.

【０００７】フォトレジストパターン寸法のフォトレジ
スト膜厚依存性は、主に２つの要因に分かれる。１つは
フォトレジストに露光光が吸収される度合によるもの
で、一定の露光量で露光する場合、フォトレジスト膜厚
に比例してフォトレジストパターン寸法が増加するバル
ク効果と、もう１つはウエハからの反射光と露光光との
干渉によって起こる定在波効果である。特に、定在波効
果はフォトレジストの屈折率が１．６４、露光光がたと
えばＧ線とよばれる４３６ｎｍの波長を持つ紫外線で露
光する場合、およそ１３０ｎｍごとに定在波の振幅が繰
り返される。このためフォトレジスト膜厚を変えて一定
の露光量で露光した場合、ノボラック系のフォトレジス
トでは、フォトレジストパターンの寸法が０．１μｍ以
上も変動する。The dependence of the photoresist pattern size on the photoresist film thickness is mainly divided into two factors. One is the degree to which the exposure light is absorbed by the photoresist, and the bulk effect that the photoresist pattern size increases in proportion to the photoresist film thickness when exposed with a constant exposure amount, and the other is the wafer effect. This is the standing wave effect caused by the interference between the reflected light from the and the exposure light. In particular, the standing wave effect is such that when the photoresist has a refractive index of 1.64 and the exposure light is ultraviolet light having a wavelength of 436 nm called G line, the amplitude of the standing wave is repeated about every 130 nm. Therefore, when the photoresist film thickness is changed and exposure is performed with a constant exposure amount, the dimension of the photoresist pattern of the novolac photoresist varies by 0.1 μm or more.

【０００８】[0008]

【発明が解決しようとする課題】上記従来の構成では、
半導体装置の性能を向上させるのに、１μｍ幅より細い
フォトレジストパターンを形成する場合、たとえば半導
体装置のトランジスタ部のゲートを形成するためのフォ
トレジストパターンの幅が０．８μｍであるとする。こ
のパターン幅が０．１μｍ細くなると、そのパターンを
用いて形成されたトランジスタは０．８μｍのフォトレ
ジストパターン幅で形成されたトランジスタと性能が著
しく低下し、トランジスタのゲートとして使えない。こ
のように定在波効果で起こる０．１μｍの寸法変動はウ
エハ上に形成させる素子や配線の性能に対し品質のばら
つきや性能を満たさないために起こる分留りの低下など
を起こすという問題がある。SUMMARY OF THE INVENTION In the above conventional configuration,
In order to improve the performance of the semiconductor device, when forming a photoresist pattern thinner than 1 μm width, for example, the width of the photoresist pattern for forming the gate of the transistor portion of the semiconductor device is 0.8 μm. When the pattern width is reduced by 0.1 μm, the transistor formed by using the pattern has a significantly lower performance than the transistor formed by the photoresist pattern width of 0.8 μm and cannot be used as the gate of the transistor. As described above, the dimensional fluctuation of 0.1 μm caused by the standing wave effect causes a problem in that the quality of the elements and wirings formed on the wafer varies in quality, and the yield is reduced because the performance is not satisfied. is there.

【０００９】さらに、半導体装置の微細化が進むに連
れ、装置の高精度化が必要になり、そのために半導体装
置製造装置の容積が大きくなり、単位面積あたりの半導
体装置の生産量を制限し、半導体装置の生産コストがあ
がるという問題があった。Further, as the miniaturization of the semiconductor device progresses, the precision of the device is required to be increased, which increases the volume of the semiconductor device manufacturing apparatus and limits the production amount of the semiconductor device per unit area. There is a problem that the production cost of the semiconductor device increases.

【００１０】本発明は上記従来の問題点を解決するもの
で、フォトレジストパターンを所望する寸法に形成する
ことができ、半導体装置の分留りと品質を向上させるこ
とのできる露光方法及び装置を提供することを目的とす
る。The present invention solves the above-mentioned conventional problems, and provides an exposure method and an apparatus capable of forming a photoresist pattern in a desired size and improving the yield and quality of a semiconductor device. The purpose is to provide.

【００１１】[0011]

【課題を解決するための手段】この目的を達成するため
に本発明の露光方法は、半導体基板上に塗布されたレジ
ストの膜厚を測定する工程と、あらかじめ求めたレジス
トパターンの特性と前記測定された膜厚とから適正な露
光量を算出する工程と、前記露光量で露光する工程を有
する。In order to achieve this object, an exposure method of the present invention comprises a step of measuring the film thickness of a resist coated on a semiconductor substrate, a characteristic of a resist pattern obtained in advance and the above-mentioned measurement. There is a step of calculating an appropriate exposure amount from the obtained film thickness and a step of exposing with the exposure amount.

【００１２】また、この目的を達成するために本発明の
露光装置は、光源から放出された光が、レチクルを介し
て照射される半導体基板と、前記半導体基板への前記光
の照射時間を調整するシャッターと、前記半導体基板に
形成されたレジストと、前記半導体基板を移動させるス
テージと、前記レジストの膜厚を測定する膜厚測定装置
と、少なくとも前記レジストのパターン寸法との関係を
記憶する記憶装置と、前記膜厚測定装置と前記記憶装置
とから適正な露光量を得るマイクロコンピューターと、
前記適正な露光量に合わせて前記シャッターを制御する
シャッター制御装置とを備えている。Further, in order to achieve this object, the exposure apparatus of the present invention adjusts a semiconductor substrate irradiated with light emitted from a light source through a reticle and an irradiation time of the light to the semiconductor substrate. A shutter, a resist formed on the semiconductor substrate, a stage for moving the semiconductor substrate, a film thickness measuring device for measuring the film thickness of the resist, and a memory for storing the relationship between at least the pattern size of the resist. A device, a microcomputer for obtaining an appropriate exposure amount from the film thickness measuring device and the storage device,
And a shutter control device that controls the shutter according to the appropriate exposure amount.

【００１３】[0013]

【作用】この構成により、ウエハ上のフォトレジスト膜
厚を測定することができ、フォトレジスト膜厚が所望す
る膜厚と異なった場合には、フォトレジスト膜厚とフォ
トレジストパターン寸法の関係及び露光量のフォトレジ
ストパターン寸法の関係を用いて所望する寸法のフォト
レジストパターンを形成でき、露光量のフォトレジスト
パターン寸法の関係を用いても所望する寸法のフォトレ
ジストパターンを形成できない場合は、たとえば露光以
降の工程に進める前にフォトレジストを除去し再度フォ
トレジストを所望する膜厚で塗布することにより、半導
体装置の品質と分留りを向上させることができる。With this configuration, the photoresist film thickness on the wafer can be measured, and when the photoresist film thickness is different from the desired film thickness, the relationship between the photoresist film thickness and the photoresist pattern size and the exposure. If a photoresist pattern having a desired dimension can be formed by using the relationship between the photoresist pattern dimensions of the amount of light and a photoresist pattern of the desired dimension cannot be formed even by using the relationship of the photoresist pattern dimensions of the exposure dose, for example, exposure By removing the photoresist and applying the photoresist again with a desired film thickness before proceeding to the subsequent steps, the quality and the yield of the semiconductor device can be improved.

【００１４】[0014]

【実施例】以下、本発明の一実施例について、図面を参
照しながら説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

【００１５】図１は本実施例における露光装置の要部の
一例を示すものである。図において、３０はウエハステ
ージ２１の移動範囲に位置している膜厚測定装置、３１
は記憶装置で、実験によって得られた、フォトレジスト
膜厚とフォトレジストパターン寸法の関係と、露光量と
フォトレジストパターン寸法の関係を記憶している。３
２はマイクロコンピューターで膜厚測定装置３０により
得たレジスト膜厚から記憶装置３１に記憶されているフ
ォトレジスト膜厚とフォトレジストパターン寸法の関係
からフォトレジストパターン寸法の膜厚依存性を計算
し、さらに記憶装置３１に記憶されている露光量とフォ
トレジストパターン寸法の関係から目的のパターン寸法
を形成できる露光量を算出する。３３はシャッター制御
装置でマイクロコンピュータ３２より得られた露光量だ
けシャッター１４の開口時間を制御する。３４はウエハ
２１上に形成されたフォトレジスト膜厚測定用パターン
である。なお、１１は超高圧水銀ランプ等の光源、１２
は光源１１から放射された光束を有効に集光するための
楕円鏡、次いで光路に沿って順に、１３は赤外光の大部
分を透過し紫外光を反射するためのコールドミラー、１
４は風車状に開口部をつけた円盤からなり、回転数を制
御する事で露光時間だけ光源１１から光を通過させるシ
ャッター、１５は光束の配光特性を均一にするためのフ
ライアイレンズ、１６は反射鏡、１７はコンデンサレン
ズ、１８はレチクル、１９はレチクル１８上に形成され
たマスクパターン、２０は投影レンズ、２１はウエハ、
２２はウエハ２１上に塗布されたフォトレジスト、２３
はウエハステージで従来例と同じ構成である。また、図
中の矢印はウエハステージの移動方向を示す。FIG. 1 shows an example of a main part of the exposure apparatus in this embodiment. In the figure, 30 is a film thickness measuring device located in the moving range of the wafer stage 21, 31
Is a storage device, which stores the relationship between the photoresist film thickness and the photoresist pattern dimension and the relationship between the exposure amount and the photoresist pattern dimension, which are obtained by experiments. Three
Reference numeral 2 denotes a microcomputer, which calculates the film thickness dependence of the photoresist pattern size from the relationship between the photoresist film thickness and the photoresist pattern size stored in the storage device 31 from the resist film thickness obtained by the film thickness measuring device 30, Further, the exposure amount capable of forming the target pattern size is calculated from the relationship between the exposure amount stored in the storage device 31 and the photoresist pattern size. A shutter control device 33 controls the opening time of the shutter 14 by the exposure amount obtained from the microcomputer 32. Reference numeral 34 is a photoresist film thickness measurement pattern formed on the wafer 21. In addition, 11 is a light source such as an ultra-high pressure mercury lamp, and 12
Is an elliptic mirror for effectively collecting the light flux emitted from the light source 11, and then sequentially along the optical path, 13 is a cold mirror for transmitting most of infrared light and reflecting ultraviolet light, 1
Reference numeral 4 is a disk having a windmill-shaped opening, and a shutter that allows light to pass from the light source 11 for the exposure time by controlling the number of revolutions, and 15 is a fly-eye lens for making the light distribution characteristics of the light flux uniform, Reference numeral 16 is a reflecting mirror, 17 is a condenser lens, 18 is a reticle, 19 is a mask pattern formed on the reticle 18, 20 is a projection lens, 21 is a wafer,
22 is a photoresist applied on the wafer 21;
Is a wafer stage having the same structure as the conventional example. Further, the arrow in the figure indicates the moving direction of the wafer stage.

【００１６】以上のように構成された露光装置につい
て、以下その動作を説明する。まず、フォトレジスト２
２を塗布されたウエハ２１はウエハステージ２３に搬送
される。次に、ウエハステージ２３がフォトレジスト膜
厚測定用パターン３４を膜厚測定装置３０が膜厚を測定
できる位置に移動し、フォトレジスト２２の膜厚を測定
する。膜厚測定装置３０より得られたフォトレジスト２
２の膜厚値はマイクロコンピュータ３２により、あらか
じめ実験で得られている記憶装置３１に記憶されている
フォトレジスト膜厚とフォトレジストパターン寸法の関
係と、露光量とフォトレジストパターン寸法の関係より
所望するフォトレジストパターン寸法を形成するのに必
要な露光量を求める。つぎに、ウエハステージ２３はレ
チクル１７上のマスクパターン１８を露光する位置に移
動する。そして光源１１から発した紫外光は、楕円鏡１
２により集光される。次に、光路に沿ってコールドミラ
ー１３で紫外光が反射され、シャッター１４に到達す
る。シャッター１４に到達した光はマイクロコンピュー
タ３２が算出した露光時間だけ開口した光路を通過し、
フライアイレンズ１５で配光特性を均一化され、反射鏡
１５、コンデンサレンズ１６を経て、レチクル１７上の
マスクパターン１８を、投影レンズ１９により、ウエハ
２０に投影する。マイクロコンピュータ３２の算出した
露光量で露光したのちウエハステージ２１を移動させる
ことによりスッテプアンドリピート（繰り返し）露光を
行いウエハ全面にパターンを配列して焼き付ける。The operation of the exposure apparatus configured as described above will be described below. First, photoresist 2
The wafer 21 coated with 2 is transferred to the wafer stage 23. Next, the wafer stage 23 moves the photoresist film thickness measuring pattern 34 to a position where the film thickness measuring device 30 can measure the film thickness, and measures the film thickness of the photoresist 22. Photoresist 2 obtained from film thickness measuring device 30
The film thickness value of 2 is desired by the microcomputer 32 based on the relationship between the photoresist film thickness and the photoresist pattern size stored in the storage device 31 obtained in advance by an experiment and the relationship between the exposure amount and the photoresist pattern size. The amount of exposure required to form the desired photoresist pattern size is determined. Next, the wafer stage 23 moves to a position where the mask pattern 18 on the reticle 17 is exposed. The ultraviolet light emitted from the light source 11 is emitted by the elliptical mirror 1
It is condensed by 2. Next, the ultraviolet light is reflected by the cold mirror 13 along the optical path and reaches the shutter 14. The light reaching the shutter 14 passes through the optical path opened for the exposure time calculated by the microcomputer 32,
The light distribution characteristic is made uniform by the fly-eye lens 15, and the mask pattern 18 on the reticle 17 is projected onto the wafer 20 by the projection lens 19 via the reflecting mirror 15 and the condenser lens 16. After exposure with the exposure amount calculated by the microcomputer 32, the wafer stage 21 is moved to perform step-and-repeat (repeated) exposure, and a pattern is arranged and printed on the entire surface of the wafer.

【００１７】なお、マイクロコンピュータ３２によるウ
エハ２１上のフォトレジスト２２の膜厚と露光量の関係
は実験によって得ることが望ましい。It is desirable that the relationship between the film thickness of the photoresist 22 on the wafer 21 and the exposure amount by the microcomputer 32 be obtained by an experiment.

【００１８】本実施例ではフォトレジスト膜厚を１．２
μｍ、露光量は１平方センチメートルあたり２００ｍＪ
で行った。所望するフォトレジストパターン寸法が１．
０μｍの場合、露光量１平方センチメートルあたり２０
０ｍＪでフォトレジスト膜厚を１．０μｍから１．４μ
ｍまで０．０２μｍごとに膜厚を変えフォトレジスト膜
厚とフォトレジストパターン寸法の関係をもとめてお
く。In this embodiment, the photoresist film thickness is 1.2.
μm, exposure amount is 200 mJ per square centimeter
I went there. The desired photoresist pattern size is 1.
When 0 μm, the exposure amount is 20 per square centimeter.
Photoresist film thickness from 1.0 μm to 1.4 μm at 0 mJ
The film thickness is changed every 0.02 μm up to m and the relationship between the photoresist film thickness and the photoresist pattern size is obtained.

【００１９】フォトレジスト膜厚とフォトレジストパタ
ーン寸法との関係を図２に示す。その両者の間の関係
は、１次関数と正弦関数の和で示される。本実施例では
１次関数と正弦関数の和で最小自乗法を用い近似を行な
い、フォトレジスト膜厚とフォトレジストパターン寸法
の関係式をもとめた。また、露光量を１平方センチメー
トルあたり１５０ｍＪから２５０ｍＪまで１０ｍＪごと
に露光量を変えて、フォトレジストパターン寸法を測定
し、露光量とフォトレジストパターン寸法の関係をもと
める。FIG. 2 shows the relationship between the photoresist film thickness and the photoresist pattern size. The relationship between the two is represented by the sum of a linear function and a sine function. In this embodiment, the sum of the linear function and the sine function is used for approximation using the least squares method, and the relational expression between the photoresist film thickness and the photoresist pattern size is obtained. The exposure amount is changed from 150 mJ per square centimeter to 250 mJ per 10 mJ, the photoresist pattern dimension is measured, and the relationship between the exposure amount and the photoresist pattern dimension is obtained.

【００２０】露光量とフォトレジストパターン寸法の関
係を図３に示す。この両者の関係は、対数関数で示さ
れ、本実施例で用いようとする範囲では１次関数で近似
できる。本実施例では所望する寸法から０．１μｍの範
囲を１次関数で最小自乗法を用い近似を行ない、露光量
とフォトレジストパターン寸法の関係式をもとめた。な
お、フォトレジスト膜厚とフォトレジストパターン寸法
の関係と、露光量とフォトレジストパターン寸法の関係
は、所望するフォトレジストパターンに応じて、測定範
囲を変えてもかまわないし、近似する式の次数をあげて
もかまわないことは言うまでもない。さらに、近似式を
用いず、フォトレジスト膜厚とフォトレジストパターン
寸法と露光量の３次元表を作製し、フォトレジストの測
定膜厚と所望するフォトレジストパターン寸法に最も近
い露光量を参照しその露光量で露光しフォトレジストパ
ターンを形成してもかまわない。また、フォトレジスト
の測定膜厚と所望するフォトレジストパターン寸法から
補完法を用いて露光量を算出しその露光量で露光しフォ
トレジストパターンを形成してもかまわない。FIG. 3 shows the relationship between the exposure dose and the photoresist pattern size. The relationship between the two is shown by a logarithmic function, and can be approximated by a linear function in the range to be used in this embodiment. In this embodiment, the range of 0.1 μm from the desired dimension was approximated by the least square method with a linear function, and the relational expression between the exposure dose and the photoresist pattern dimension was obtained. The relationship between the photoresist film thickness and the photoresist pattern size and the relationship between the exposure amount and the photoresist pattern size may be changed in the measurement range according to the desired photoresist pattern, and the order of the approximate expression It goes without saying that you can give it. Furthermore, a three-dimensional table of the photoresist film thickness, the photoresist pattern size, and the exposure amount was prepared without using the approximate expression, and the measured film thickness of the photoresist and the exposure amount closest to the desired photoresist pattern size were referred to. The photoresist pattern may be formed by exposure with an exposure amount. Further, the exposure amount may be calculated from the measured film thickness of the photoresist and the desired photoresist pattern size by using the complementary method, and the photoresist pattern may be formed by exposing with the exposure amount.

【００２１】また、本実施例では、半導体装置を形成す
るためのウエハで膜厚を測定したが、膜厚測定用に作成
されたウエハを用いてもよい。また、ウエハステージ２
３を移動させ膜厚測定装置で膜厚を測定できる位置にウ
エハ２１を移動させたが、膜厚測定装置３０を移動させ
てもよい。Further, in the present embodiment, the film thickness was measured on the wafer for forming the semiconductor device, but a wafer prepared for film thickness measurement may be used. Also, the wafer stage 2
Although the wafer 21 is moved to the position where 3 can be moved and the film thickness can be measured by the film thickness measuring device, the film thickness measuring device 30 may be moved.

【００２２】図４は本実施例における膜厚測定装置３０
の要部の一例を示した図である。以下、図４を参照しな
がら説明すると、４１はヘリウムネオンレーザー等の光
源、４２は偏光子で光源４１から発した光を変更させ
る、４３は検光子でウエハ２１より反射した光を受光し
強度を測定する。ウエハ２１、フォトレジスト２２、マ
イクロコンピュータ３２は図１とおなじである。FIG. 4 shows a film thickness measuring device 30 in this embodiment.
It is the figure which showed an example of the principal part of. In the following, referring to FIG. 4, 41 is a light source such as a helium neon laser, 42 is a polarizer that changes the light emitted from the light source 41, and 43 is an analyzer that receives the light reflected from the wafer 21 and intensifies it. To measure. The wafer 21, the photoresist 22, and the microcomputer 32 are the same as those in FIG.

【００２３】以上のように構成された異物付着検出装置
３０について、以下その動作を説明する。The operation of the foreign matter adhesion detection device 30 constructed as described above will be described below.

【００２４】膜厚測定装置３０は、光源４１から発した
光を偏光子４２で偏向させ、フォトレジスト２２を塗布
したウエハ２１に照射し、ウエハ２１から反射した光を
検光子４３で受光する。検光子４３で受光された光の強
度と偏光子４２の偏向の関係から算出されたフォトレジ
スト２２の膜厚は、マイクロコンピュータ３２におくら
れ、露光量を算出する。The film thickness measuring device 30 deflects the light emitted from the light source 41 with the polarizer 42, irradiates the wafer 21 coated with the photoresist 22 and receives the light reflected from the wafer 21 with the analyzer 43. The film thickness of the photoresist 22 calculated from the relationship between the intensity of the light received by the analyzer 43 and the deflection of the polarizer 42 is stored in the microcomputer 32, and the exposure amount is calculated.

【００２５】なお、本実施例ではエリプソメーターと呼
ばれる膜厚測定装置を用いたが、他の膜厚測定装置を用
いてもよい。Although a film thickness measuring device called an ellipsometer is used in this embodiment, another film thickness measuring device may be used.

【００２６】図５は本実施例における膜厚測定パターン
の一例を示した図である。以下、図５にもとづいて説明
すると、５１は半導体装置を形成するパターン、５２は
フォトレジスト膜厚を測定するためのパターンである。
ウエハ２１，フォトレジスト２２は図１と同様である。FIG. 5 is a diagram showing an example of the film thickness measurement pattern in this embodiment. Hereinafter, referring to FIG. 5, 51 is a pattern for forming a semiconductor device, and 52 is a pattern for measuring the photoresist film thickness.
The wafer 21 and the photoresist 22 are the same as those in FIG.

【００２７】フォトレジスト膜厚を測定するためのパタ
ーンはウエハ２１の中心を通る十字上に位置しており、
その領域を避けて半導体装置を形成するパターンが形成
されている。このようにフォトレジスト膜厚を測定する
ためのパターンを形成することによって、ウエハ２１上
でのフォトレジスト２２の膜厚の分布を求めることがで
き各露光ごとに目的のフォトレジストパターン寸法を形
成する露光時間を求められる。また、多くの半導体装置
を１枚のウエハ２１に形成する必要がある場合には図６
に示すように膜厚測定用パターンの数や面積を減らして
もかまわないし、パターンの位置を変えてもかまわな
い。The pattern for measuring the photoresist film thickness is located on a cross passing through the center of the wafer 21,
A pattern for forming a semiconductor device is formed while avoiding the region. By thus forming the pattern for measuring the photoresist film thickness, the distribution of the film thickness of the photoresist 22 on the wafer 21 can be obtained, and the desired photoresist pattern size is formed for each exposure. Exposure time is required. Further, when many semiconductor devices need to be formed on one wafer 21, FIG.
As shown in, the number and area of the film thickness measurement patterns may be reduced, or the positions of the patterns may be changed.

【００２８】以上のように本実施例によれば、膜厚測定
装置を設けたことにより、半導体装置製造装置の容積を
増やすことなく、ウエハ上のフォトレジスト膜厚を測定
することができる。また、フォトレジスト膜厚が所望す
る膜厚と異なるか、基準となる露光時間ではウエハ上に
形成されるフォトレジストパターン寸法が所望の寸法と
異なることが予想される場合でも、所望のフォトレジス
トパターン寸法が形成できる露光量で露光を行うことが
できる。さらに、あらかじめ設定したレジスト膜厚の範
囲より外れた場合でも、露光を中止し後工程の進める前
に処理を付すことにより、フォトレジストパターンを所
望する寸法で形成することができ、半導体装置の品質と
歩留りを向上することができる。As described above, according to this embodiment, since the film thickness measuring device is provided, the photoresist film thickness on the wafer can be measured without increasing the volume of the semiconductor device manufacturing apparatus. Even when the photoresist film thickness is different from the desired film thickness or the photoresist pattern size formed on the wafer is expected to be different from the desired size at the reference exposure time, the desired photoresist pattern The exposure can be performed with an exposure amount that allows formation of dimensions. Further, even if the resist film thickness is out of the preset range, it is possible to form a photoresist pattern with a desired size by stopping the exposure and performing a process before proceeding to the subsequent steps. And the yield can be improved.

【００２９】同様の要領で本発明の第２の実施例を図面
を参照しながら説明する。第２の実施例の露光方法に用
いる露光装置の要部は第１の実施例の膜厚測定装置と記
憶装置とマイクロコンピュータが露光装置外にある他
は、第１の実施例と同様である。従って膜厚測定につい
てだけ説明する。図７は、本実施例の第２の実施例の要
部示した図である。以下、図７にもとずいて説明する
と、６０は露光装置で膜厚測定装置と記憶装置とマイク
ロコンピュータが露光装置外にある他は第１の実施例と
同様である。A second embodiment of the present invention will be described in the same manner with reference to the drawings. The main part of the exposure apparatus used in the exposure method of the second embodiment is the same as that of the first embodiment except that the film thickness measuring device, the storage device and the microcomputer of the first embodiment are outside the exposure device. . Therefore, only the film thickness measurement will be described. FIG. 7 is a diagram showing a main part of a second embodiment of this embodiment. Referring to FIG. 7, an exposure apparatus 60 is the same as the first embodiment except that the film thickness measuring device, the storage device and the microcomputer are outside the exposure apparatus.

【００３０】図において、６１は膜厚測定機で露光機外
に設置されている。６２は膜厚測定装置で膜厚測定機６
１内にある。６３はウエハステージ、６４は記憶装置で
あって実験によって得られたフォトレジスト膜厚と、フ
ォトレジストパターン寸法との関係と、露光量とフォト
レジストパターン寸法との関係を記憶している。６５は
マイクロコンピューターであって、膜厚測定装置６２に
より得たフォトレジスト膜厚から記憶装置６４に記憶さ
れているフォトレジスト膜厚と、フォトレジストパター
ン寸法の関係からフォトレジストパターン寸法の膜厚依
存性を計算する、さらに記憶装置６２に記憶されている
露光量とフォトレジストパターン寸法の関係から所望す
るフォトレジストパターン寸法を形成できる露光量を算
出する。なお、２１はウエハ、２２はウエハ２１上に塗
布されたフォトレジスト、３３はシャッター制御装置で
マイクロコンピュータ６５より得られた露光量だけシャ
ッターの開口時間を制御する、３４はウエハ２１上に形
成されたフォトレジスト膜厚測定用パターンで、第１の
実施例と同様である。In the figure, reference numeral 61 denotes a film thickness measuring device, which is installed outside the exposure device. Reference numeral 62 is a film thickness measuring device 6
Within 1. Reference numeral 63 is a wafer stage, and 64 is a storage device, which stores the relationship between the photoresist film thickness and the photoresist pattern dimension obtained by experiments, and the relationship between the exposure amount and the photoresist pattern dimension. Reference numeral 65 denotes a microcomputer, which depends on the photoresist film thickness obtained by the film thickness measuring device 62 from the relationship between the photoresist film thickness stored in the storage device 64 and the photoresist pattern size. Then, the exposure amount that can form a desired photoresist pattern size is calculated from the relationship between the exposure amount stored in the storage device 62 and the photoresist pattern size. Reference numeral 21 is a wafer, 22 is a photoresist coated on the wafer 21, 33 is a shutter control device which controls the opening time of the shutter by an exposure amount obtained from the microcomputer 65, and 34 is formed on the wafer 21. The photoresist film thickness measurement pattern is similar to that of the first embodiment.

【００３１】以上のように構成された露光方法につい
て、以下その動作を説明する。まず、フォトレジスト２
２を塗布されたウエハ２１はウエハステージ６３に搬送
される。次に、ウエハステージ６３がフォトレジスト膜
厚測定用パターン３２を膜厚測定装置６２が膜厚を測定
できる位置に移動し、フォトレジスト２２の膜厚を測定
する。膜厚測定装置６２より得られたフォトレジスト２
２の膜厚はマイクロコンピュータ６５により、あらかじ
め実験で得られ、記憶装置６４に記憶されているフォト
レジスト膜厚とフォトレジストパターン寸法との関係
と、露光量とフォトレジストパターン寸法との関係から
所望するフォトレジストパターン寸法を形成するのに必
要な露光量を求める。求めた露光量は膜厚測定機６１か
ら露光機６０内にあるシャッター制御装置３３に転送さ
れ、第１の実施例と同様に得られた露光量でスッテプア
ンドリピート（繰り返し）露光を行う。The operation of the exposure method configured as described above will be described below. First, photoresist 2
The wafer 21 coated with 2 is transferred to the wafer stage 63. Next, the wafer stage 63 moves the photoresist film thickness measuring pattern 32 to a position where the film thickness measuring device 62 can measure the film thickness, and measures the film thickness of the photoresist 22. Photoresist 2 obtained by the film thickness measuring device 62
The film thickness of 2 is obtained in advance by an experiment by the microcomputer 65, and is desired from the relationship between the photoresist film thickness and the photoresist pattern size stored in the storage device 64 and the relationship between the exposure amount and the photoresist pattern size. The amount of exposure required to form the desired photoresist pattern size is determined. The obtained exposure amount is transferred from the film thickness measuring device 61 to the shutter control device 33 in the exposure device 60, and step-and-repeat (repeated) exposure is performed with the exposure amount obtained as in the first embodiment.

【００３２】なお、本実施例では露光するウエハのフォ
トレジスト膜厚をすべて測定したが一部のウエハだけを
測定してもかまわない。In this embodiment, all the photoresist film thickness of the wafer to be exposed was measured, but only a part of the wafer may be measured.

【００３３】また、本実施例では求めた露光量を複数の
露光機に転送できるようにしてあるが、１台だけに転送
できるようにしてもかまわない。In this embodiment, the obtained exposure amount can be transferred to a plurality of exposure machines, but it may be transferred to only one exposure machine.

【００３４】さらに、本実施例では記憶装置とマイクロ
コンピュータを膜厚測定機内に設置したが、露光機内に
設置してもかまわない。Further, although the storage device and the microcomputer are installed in the film thickness measuring machine in this embodiment, they may be installed in the exposure machine.

【００３５】以上のように本実施例によれば、フォトレ
ジスト膜厚膜厚測定する工程と、測定したフォトレジス
ト膜厚から所望するフォトレジストパターン寸法を形成
するのに必要な露光量を求める工程を有することで標準
の露光時間ではウエハ上に形成されるフォトレジストパ
ターン寸法が目的の寸法と異なることが予想される場合
には、所望するフォトレジストパターン寸法が形成でき
る露光時間で露光を行うことができ、さらにあらかじめ
設定したレジスト膜厚の範囲より外れた場合は、露光を
中止し、後工程を進める前に処理を施すことで、フォト
レジストパターンを目的の寸法に形成でき、半導体装置
の品質と歩留りを向上することができる。As described above, according to the present embodiment, the step of measuring the photoresist film thickness and the step of obtaining the exposure amount required to form the desired photoresist pattern dimension from the measured photoresist film thickness. If it is expected that the photoresist pattern size formed on the wafer will differ from the target size in the standard exposure time due to the above, the exposure time should be such that the desired photoresist pattern size can be formed. When the resist film thickness is out of the preset range, the photoresist pattern can be formed to the target size by stopping the exposure and performing the process before proceeding to the subsequent process. And the yield can be improved.

【００３６】[0036]

【発明の効果】本発明は、フォトレジスト膜厚測定装置
を有することにより、ウエハ上に塗布されたフォトレジ
スト膜厚の変動にかかわらずとウエハ上に形成されるフ
ォトレジストパターンを所望する寸法で形成することが
でき、半導体装置の品質と歩留りを向上させる半導体装
置製造に用いられる露光方法及び露光装置を実現できる
ものである。The present invention has the photoresist film thickness measuring device, so that the photoresist pattern formed on the wafer can be formed in a desired size regardless of the fluctuation of the photoresist film thickness applied on the wafer. It is possible to realize an exposure method and an exposure apparatus that can be formed and that are used for manufacturing a semiconductor device and that improve the quality and yield of the semiconductor device.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の第１の実施例における露光装置の要部
の一例を示す構成図FIG. 1 is a configuration diagram showing an example of a main part of an exposure apparatus according to a first embodiment of the present invention.

【図２】フォトレジスト膜厚とフォトレジストパターン
寸法の関係の一例を示す図FIG. 2 is a diagram showing an example of a relationship between a photoresist film thickness and a photoresist pattern dimension.

【図３】露光量とフォトレジストパターン寸法の関係の
一例を示す図FIG. 3 is a diagram showing an example of a relationship between an exposure amount and a photoresist pattern size.

【図４】第１の実施例における膜厚測定装置の要部の一
例を示す構成図FIG. 4 is a configuration diagram showing an example of a main part of a film thickness measuring device according to a first embodiment.

【図５】第１の実施例における膜厚測定用パターンの一
例を示す図FIG. 5 is a diagram showing an example of a film thickness measurement pattern in the first embodiment.

【図６】第１の実施例における膜厚測定用パターンの一
例を示す図FIG. 6 is a diagram showing an example of a film thickness measurement pattern in the first embodiment.

【図７】本発明のの第２の実施例の露光方法の要部の一
例を示す構成図FIG. 7 is a configuration diagram showing an example of a main part of an exposure method according to a second embodiment of the present invention.

【図８】従来の露光装置および露光方法の要部の一例を
示す構成図FIG. 8 is a configuration diagram showing an example of a main part of a conventional exposure apparatus and exposure method.

【符号の説明】[Explanation of symbols]

１１ 光源 １２ 楕円鏡 １３ コールドミラー １４ シャッター １５ フライアイレンズ １６ 反射鏡 １７ コンデンサレンズ １８ レチクル １９ マスクパターン ２０ 投影レンズ ２１ ウエハ ２２ フォトレジスト ２３ ウエハステージ ３０ 膜厚測定装置 ３１ 記憶装置 ３２ マイクロコンピュータ ３３ シャッター制御装置 ３４ 膜厚測定用パターン 11 Light Source 12 Elliptical Mirror 13 Cold Mirror 14 Shutter 15 Fly-eye Lens 16 Reflecting Mirror 17 Condenser Lens 18 Reticle 19 Mask Pattern 20 Projection Lens 21 Wafer 22 Photoresist 23 Wafer Stage 30 Film Thickness Measuring Device 31 Storage Device 32 Microcomputer 33 Shutter Control Device 34 Pattern for film thickness measurement

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｇ０３Ｆ 7/20 ５２１ 9122−2Ｈ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location G03F 7/20 521 9122-2H

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】半導体基板上に塗布されたレジストの膜厚
を測定する工程と、あらかじめ求めたレジストパターン
の特性と前記測定された膜厚とから適正な露光量を算出
する工程と、前記露光量で露光する工程を有することを
特徴とする露光方法。1. A step of measuring a film thickness of a resist applied on a semiconductor substrate, a step of calculating an appropriate exposure amount from a characteristic of a resist pattern obtained in advance and the measured film thickness, and the exposure. An exposure method comprising a step of exposing in an amount. 【請求項２】光源から放出された光が、レチクルを介し
て照射される半導体基板と、前記半導体基板への前記光
の照射時間を調整するシャッターと、前記半導体基板に
形成されたレジストと、前記半導体基板を移動させるス
テージと、前記レジストの膜厚を測定する膜厚測定装置
と、少なくとも前記レジストのパターン寸法との関係を
記憶する記憶装置と、前記膜厚測定装置と前記記憶装置
とから適正な露光量を得るマイクロコンピューターと、
前記適正な露光量に合わせて前記シャッターを制御する
シャッター制御装置とを備えたことを特徴とする露光装
置。2. A semiconductor substrate irradiated with light emitted from a light source through a reticle, a shutter for adjusting an irradiation time of the light onto the semiconductor substrate, and a resist formed on the semiconductor substrate. From a stage for moving the semiconductor substrate, a film thickness measuring device for measuring the film thickness of the resist, a storage device for storing a relationship between at least the pattern size of the resist, the film thickness measuring device and the storage device. A microcomputer that obtains an appropriate amount of exposure,
An exposure apparatus comprising: a shutter control device that controls the shutter according to the appropriate exposure amount.
JP4178046A 1992-07-06 1992-07-06 Exposure method and device Pending JPH0620913A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4178046A JPH0620913A (en) 1992-07-06 1992-07-06 Exposure method and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4178046A JPH0620913A (en) 1992-07-06 1992-07-06 Exposure method and device

Publications (1)

Publication Number Publication Date
JPH0620913A true JPH0620913A (en) 1994-01-28

Family

ID=16041653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4178046A Pending JPH0620913A (en) 1992-07-06 1992-07-06 Exposure method and device

Country Status (1)

Country Link
JP (1) JPH0620913A (en)

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WO2003010803A1 (en) * 2001-07-26 2003-02-06 Seiko Epson Corporation Exposure device, exposure method, method of producing semiconductor device, electrooptic device, and electronic equipment
JP2003151893A (en) * 2001-11-19 2003-05-23 Dainippon Screen Mfg Co Ltd Substrate processing unit, substrate processing apparatus, and substrate processing method
KR100558508B1 (en) * 1999-10-25 2006-03-07 동경 엘렉트론 주식회사 Substrate processing system and substrate processing method
JP2009290210A (en) * 2008-05-30 2009-12-10 Asml Netherlands Bv Method of determining defects in substrate and apparatus for exposing substrate in lithographic process
WO2010067484A1 (en) * 2008-12-11 2010-06-17 パナソニック株式会社 Method for exposing semiconductor substrate and semiconductor device manufacturing system
JP2010171219A (en) * 2009-01-23 2010-08-05 Ushio Inc Light source equipment and aligner including the same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100558508B1 (en) * 1999-10-25 2006-03-07 동경 엘렉트론 주식회사 Substrate processing system and substrate processing method
WO2003010803A1 (en) * 2001-07-26 2003-02-06 Seiko Epson Corporation Exposure device, exposure method, method of producing semiconductor device, electrooptic device, and electronic equipment
JPWO2003010803A1 (en) * 2001-07-26 2004-11-18 セイコーエプソン株式会社 Exposure apparatus, exposure method, method of manufacturing semiconductor device, electro-optical device, and electronic apparatus
JP4861605B2 (en) * 2001-07-26 2012-01-25 セイコーエプソン株式会社 Exposure equipment
JP2003151893A (en) * 2001-11-19 2003-05-23 Dainippon Screen Mfg Co Ltd Substrate processing unit, substrate processing apparatus, and substrate processing method
JP2009290210A (en) * 2008-05-30 2009-12-10 Asml Netherlands Bv Method of determining defects in substrate and apparatus for exposing substrate in lithographic process
US8345231B2 (en) 2008-05-30 2013-01-01 Asml Netherlands B.V. Method of determining defects in a substrate and apparatus for exposing a substrate in a lithographic process
WO2010067484A1 (en) * 2008-12-11 2010-06-17 パナソニック株式会社 Method for exposing semiconductor substrate and semiconductor device manufacturing system
JP2010171219A (en) * 2009-01-23 2010-08-05 Ushio Inc Light source equipment and aligner including the same

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