JPH06196429A - Vertical type furnace for manufacture of semiconductor - Google Patents
Vertical type furnace for manufacture of semiconductorInfo
- Publication number
- JPH06196429A JPH06196429A JP34718692A JP34718692A JPH06196429A JP H06196429 A JPH06196429 A JP H06196429A JP 34718692 A JP34718692 A JP 34718692A JP 34718692 A JP34718692 A JP 34718692A JP H06196429 A JPH06196429 A JP H06196429A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- wafer supporting
- jig
- vertical furnace
- reaction tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ウエハを例えば酸化、
拡散、減圧ＣＶＤ処理等する際に使用する半導体製造用
縦型炉に関する。BACKGROUND OF THE INVENTION The present invention relates to the oxidation of wafers, for example,
The present invention relates to a vertical furnace for semiconductor production, which is used for diffusion, low pressure CVD processing, and the like.
【０００２】[0002]
【従来の技術】半導体装置は、ウエハにイオンを注入し
熱処理する工程、酸化膜を形成する工程、薄膜を形成す
る工程等の種々の工程を経て形成されるが、複数枚のウ
エハを同時に処理する工程では縦型炉が使用されること
がある。従来の縦型炉を、図６を参照して説明する。2. Description of the Related Art A semiconductor device is formed through various processes such as a process of implanting ions into a wafer and performing a heat treatment, a process of forming an oxide film, a process of forming a thin film, and the like. A vertical furnace may be used in the process. A conventional vertical furnace will be described with reference to FIG.
【０００３】図６は、従来の縦型炉の概略構成を示す斜
視図である。この縦型炉１０には、複数枚のウエハ（図
示せず）を一定間隔離して支持するウエハ支持治具１１
と、このウエハ支持治具１１を保持し昇降するエレベー
タに取り付けられたウエハ支持治具台１２と、ウエハ支
持治具１１が収容される反応管１３が備えられており、
外部から搬入されたウエハはウエハ移載機１４でウエハ
支持治具１１に移載される。このウエハ支持治具１１
は、反応管１３の長さとほぼ同じ程度の長さのものであ
り、反応管１３の底部からこの反応管１３に装入される
ように構成されている。FIG. 6 is a perspective view showing a schematic structure of a conventional vertical furnace. The vertical furnace 10 includes a wafer support jig 11 for supporting a plurality of wafers (not shown) by separating them for a certain period of time.
A wafer support jig base 12 attached to an elevator that holds and holds the wafer support jig 11, and a reaction tube 13 in which the wafer support jig 11 is housed.
The wafer transferred from the outside is transferred to the wafer support jig 11 by the wafer transfer device 14. This wafer support jig 11
Has a length approximately the same as the length of the reaction tube 13, and is configured to be inserted into the reaction tube 13 from the bottom of the reaction tube 13.
【０００４】上記のように従来の縦型炉は、長いウエハ
支持治具を反応管に装入する前に、このウエハ支持治具
を半導体製造用縦型炉の下方で垂直方向に配置してい
る。この縦型炉１０の高さｈは、反応管１３の長さ、ウ
エハ支持治具１１の長さ、、ウエハ支持治具台１２の厚
み、及びこれらを設置するためのスペースを合計したも
のとなっている。この縦型炉１０の高さｈは、ウエハが
大口径になるに伴ってウエハ厚増加等の物理的理由、成
膜均一性確保等のプロセス的理由からウエハ間隔を広げ
るために高くなる傾向にあり、例えばウエハの径が６イ
ンチで高さｈは２３００ｍｍ、ウエハの径が８インチで
高さｈは２８００ｍｍとなる。As described above, in the conventional vertical furnace, before the long wafer supporting jig is loaded into the reaction tube, the wafer supporting jig is arranged vertically below the vertical furnace for semiconductor manufacturing. There is. The height h of the vertical furnace 10 is the sum of the length of the reaction tube 13, the length of the wafer supporting jig 11, the thickness of the wafer supporting jig base 12, and the space for installing these. Has become. The height h of the vertical furnace 10 tends to increase in order to widen the wafer interval due to physical reasons such as an increase in wafer thickness and process reasons such as ensuring film formation uniformity as the wafer becomes larger in diameter. For example, the diameter of the wafer is 6 inches and the height h is 2300 mm, and the diameter of the wafer is 8 inches and the height h is 2800 mm.
【０００５】[0005]
【発明が解決しようとする課題】上記の半導体製造用縦
型炉は、クリーンルーム内に設置されており、このクリ
ーンルームは室内容積に比例して製造コスト、ランニン
グコストが上昇する。このため、このクリーンルーム内
に設置する半導体製造用縦型炉はできるだけ高さが低い
ものが望まれている。一方、上記従来の半導体製造用縦
型炉では、ウエハが大口径になるに伴って炉の高さを高
くせざるをえないため、クリーンルームの高さが高くな
りクリーンルームのコストが上昇するという問題があ
る。The vertical furnace for semiconductor manufacturing described above is installed in a clean room, and the manufacturing cost and running cost increase in proportion to the volume of the clean room. Therefore, it is desired that the vertical furnace for semiconductor production installed in this clean room has a height as low as possible. On the other hand, in the conventional vertical furnace for semiconductor manufacturing, the height of the furnace must be increased as the diameter of the wafer is increased, and therefore the height of the clean room is increased and the cost of the clean room is increased. There is.
【０００６】本発明は、上記事情に鑑み、天井高さが低
いクリーンルームに設置でき、しかも従来と同程度のウ
エハ枚数を処理する半導体製造用縦型炉を提供すること
を目的とする。In view of the above circumstances, it is an object of the present invention to provide a vertical furnace for semiconductor manufacturing which can be installed in a clean room having a low ceiling height and can process the same number of wafers as the conventional one.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
の本発明の半導体製造用縦型炉は、複数枚のウエハを同
時に処理する半導体製造用縦型炉において、（１）複数
枚のウエハを支持する複数のウエハ支持治具、（２）ウ
エハ支持治具の出し入れが行われる開口部が上端側もし
くは下端側に形成された、ウエハ支持治具が上下方向一
列に装入される反応管、（３）複数のウエハ支持治具を
それぞれ保持し、複数のウエハ支持治具を開口部近傍の
水平面上で移動すると共に反応管に順次装入する昇降機
を備えたことを特徴とするものである。A vertical furnace for semiconductor production of the present invention for achieving the above object is a vertical furnace for semiconductor production that simultaneously processes a plurality of wafers. (1) A plurality of wafers A plurality of wafer supporting jigs for supporting the wafer, and (2) a reaction tube in which the wafer supporting jigs are loaded in a row in the vertical direction, with an opening formed at the upper end side or the lower end side for taking in and out the wafer supporting jigs. (3) A plurality of wafer supporting jigs are respectively held, the plurality of wafer supporting jigs are moved on a horizontal plane in the vicinity of the opening, and an elevator for sequentially loading the reaction tubes is provided. is there.
【０００８】反応管の下端側に開口部を形成した場合
は、開口部の近傍の下方の水平面でウエハ支持治具を移
動させる構成とし、反応管の上端側に開口部を形成した
場合は、開口部の近傍の上方の水平面でウエハ支持治具
を移動させる構成とする。また、ウエハ支持治具を移動
させる際に、ウエハ支持治具と反応管が接触しない距離
だけ水平面と開口部を互いに離す。When the opening is formed on the lower end side of the reaction tube, the wafer supporting jig is moved on a horizontal plane below the opening, and when the opening is formed on the upper end side of the reaction tube, The wafer supporting jig is configured to move on a horizontal plane above the vicinity of the opening. Further, when the wafer support jig is moved, the horizontal plane and the opening are separated from each other by such a distance that the wafer support jig and the reaction tube do not come into contact with each other.
【０００９】[0009]
【作用】複数のウエハ支持治具が半導体製造用縦型炉の
下方または上方で上下方向一列に並ばずに、開口部近傍
の水平面上で移動し反応管に順次装入される。このた
め、従来の縦型炉に比べ、高さの低い半導体製造用縦型
炉が得られる。この結果、この半導体製造用縦型炉が設
置されるクリーンルームの天井高さも低くでき、クリー
ンルームのコストを低減できる。The plurality of wafer supporting jigs are not arranged in a line in the vertical direction below or above the vertical furnace for semiconductor manufacturing, but are moved on the horizontal plane near the opening and are sequentially loaded into the reaction tube. Therefore, a vertical furnace for semiconductor production having a height lower than that of the conventional vertical furnace can be obtained. As a result, the ceiling height of the clean room in which this vertical furnace for semiconductor manufacturing is installed can be lowered, and the cost of the clean room can be reduced.
【００１０】[0010]
【実施例】以下、図面を参照して本発明の半導体製造用
縦型炉の一実施例を説明する。図１から図４は、本実施
例の半導体製造用縦型炉の概略構成と、ウエハを反応管
に装入する際のこの縦型炉の内部の動きを示す断面図で
ある。本実施例で示す半導体製造用縦型炉は、図６に示
す従来のウエハ支持治具１１の約半分の長さのウエハ支
持治具を２つ備え、さらにこの２つのウエハ支持治具を
それぞれ昇降する２つのエレベータを備えた点に特徴が
ある。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the vertical furnace for semiconductor production of the present invention will be described below with reference to the drawings. 1 to 4 are cross-sectional views showing a schematic configuration of a vertical furnace for semiconductor production of the present embodiment and an internal movement of the vertical furnace when a wafer is loaded into a reaction tube. The vertical furnace for semiconductor manufacturing shown in this embodiment includes two wafer supporting jigs each having a length about half that of the conventional wafer supporting jig 11 shown in FIG. It is characterized by having two elevators that move up and down.
【００１１】図１（ａ）は、複数枚のウエハが支持され
たウエハ支持治具がウエハ支持治具台に搭載され、反応
管に装入される前の状態を示す断面図、（ｂ）は（ａ）
のＡ−Ａ断面図である。縦型炉２０には、複数枚のウエ
ハ２１をそれぞれ支持するウエハ支持治具２２，２３
と、このウエハ支持治具２２，２３が置かれるウエハ支
持治具台２５ａ，２６ａが取り付けられたエレベータ２
５，２６が備えられている。このエレベータ２５，２６
は、軸２５ｂ，２６ｂに沿ってウエハ支持治具台２５
ａ，２６ａを昇降させるだけでなく、治具台取付部２５
ｃ，２６ｃを中心に水平面内でウエハ支持治具台２５
ａ，２６ａを回転させる構成となっている。また、ウエ
ハ支持治具台２５ａは後述するようにＣ字状となってお
り（図３（ｂ）参照）、反応管２７に装入されたウエハ
支持治具２２がウエハ支持治具２３に下方から保持され
た状態のときに、ウエハ支持治具２５ａは矢印Ｆで示す
方向に回転し（図３（ｂ）参照）ウエハ支持治具２２か
ら離脱する構成となっている。FIG. 1A is a sectional view showing a state in which a wafer supporting jig supporting a plurality of wafers is mounted on a wafer supporting jig base and before being loaded into a reaction tube, FIG. Is (a)
FIG. The vertical furnace 20 includes wafer support jigs 22 and 23 that respectively support a plurality of wafers 21.
And the elevator 2 to which the wafer support jig bases 25a and 26a on which the wafer support jigs 22 and 23 are placed are attached.
5, 26 are provided. This elevator 25,26
Is the wafer support jig base 25 along the axes 25b and 26b.
a and 26a are not only moved up and down, but also the jig base mounting portion 25
c, 26c as a center, and a wafer support jig table 25 in a horizontal plane
It is configured to rotate a and 26a. The wafer support jig base 25a has a C shape as described later (see FIG. 3B), and the wafer support jig 22 loaded in the reaction tube 27 is located below the wafer support jig 23. The wafer supporting jig 25a is rotated in the direction indicated by the arrow F (see FIG. 3B) and is separated from the wafer supporting jig 22 in the state where the wafer supporting jig 25a is held.
【００１２】図１に示す状態から、ウエハ支持治具台２
５ａを上昇させ、ウエハ支持治具２３を開口部２７ａか
ら反応管２７に装入し、続いてウエハ支持治具台２６ａ
を矢印Ｅで示す方向に回転させる。この一連の動作で、
図２に示すように、ウエハ支持治具２２が反応管２７の
中に装入される一方、ウエハ支持治具２３が開口部２７
ａの下方に移動する。From the state shown in FIG. 1, the wafer support jig base 2
5a, the wafer supporting jig 23 is loaded into the reaction tube 27 through the opening 27a, and then the wafer supporting jig base 26a
Is rotated in the direction indicated by arrow E. With this series of operations,
As shown in FIG. 2, the wafer support jig 22 is loaded into the reaction tube 27, while the wafer support jig 23 is opened into the opening 27.
Move below a.
【００１３】図２（ａ）はウエハ支持治具２２が反応管
２７の中に配置され、ウエハ支持治具２３が開口部２７
ａの下方に移動した状態を示す断面図、（ｂ）は（ａ）
のＢ−Ｂ断面図である。図２に示す状態から、ウエハ支
持治具台２６ａを上昇させこのウエハ支持治具２３の上
端部をウエハ支持治具２２の下端部に当接させる。ここ
で、ウエハ支持治具２３の上端部には凸部２３ａが形成
され、ウエハ支持治具２２の下端部にはこの凸部２３ａ
と嵌合する凹部２２ａが形成されている（図５参照）。
このため、ウエハ支持治具２３の上端部がウエハ支持治
具２２の下端部に当接した状態では凸部２３ａと凹部２
２ａが互いに嵌合し、ウエハ支持治具２２はウエハ支持
治具２３によって安定して支えられ、ウエハ支持治具２
３がウエハ支持治具２２をやや押し上げると、ウエハ支
持治具２２はウエハ支持治具台２５ａから少し離れた状
態となる。この状態で、ウエハ支持治具台２５ａを矢印
Ｆで示す方向に回転させることにより（図３（ｂ）参
照）ウエハ支持治具台２５ａをウエハ支持治具２２から
離脱させることができる。In FIG. 2A, the wafer support jig 22 is arranged in the reaction tube 27, and the wafer support jig 23 is opened.
Sectional drawing which shows the state moved below a, (b) is (a)
FIG. From the state shown in FIG. 2, the wafer support jig base 26a is raised and the upper end portion of the wafer support jig 23 is brought into contact with the lower end portion of the wafer support jig 22. Here, a convex portion 23a is formed on the upper end of the wafer supporting jig 23, and the convex portion 23a is formed on the lower end of the wafer supporting jig 22.
A recessed portion 22a that fits with is formed (see FIG. 5).
Therefore, when the upper end of the wafer supporting jig 23 is in contact with the lower end of the wafer supporting jig 22, the convex portion 23a and the concave portion 2
2a are fitted to each other, and the wafer support jig 22 is stably supported by the wafer support jig 23.
When 3 pushes up the wafer supporting jig 22 a little, the wafer supporting jig 22 is in a state of being slightly separated from the wafer supporting jig base 25a. In this state, the wafer supporting jig base 25a can be detached from the wafer supporting jig 22 by rotating the wafer supporting jig base 25a in the direction indicated by the arrow F (see FIG. 3B).
【００１４】図３（ａ）は、反応管２７の中に配置され
たウエハ支持治具２２がウエハ支持治具２３に支えられ
た状態を示す断面図、（ｂ）は（ａ）のＣ−Ｃ断面図で
ある。図３に示す状態から、ウエハ支持治具台２６ａを
更に上昇させ、ウエハ支持治具２２，２３を反応管２７
に装入させる。FIG. 3A is a sectional view showing a state in which the wafer support jig 22 arranged in the reaction tube 27 is supported by the wafer support jig 23, and FIG. It is C sectional drawing. From the state shown in FIG. 3, the wafer support jig base 26a is further raised to attach the wafer support jigs 22 and 23 to the reaction tube 27.
Charge into.
【００１５】図４（ａ）は、ウエハ支持治具２２，２３
が反応管２７に装入された状態を示す断面図、（ｂ）は
（ａ）のＤ−Ｄ断面図である。図４に示す状態では、２
つのウエハ支持治具２２，２３が反応管２７の中に装入
されており、また、ウエハ支持治具２３の下端部２３ｂ
で反応管２７が密閉されている。これにより、反応管２
７内に装入された複数枚のウエハ２１に所望の処理を施
すことができることとなる。FIG. 4A shows the wafer supporting jigs 22 and 23.
Is a cross-sectional view showing a state in which is charged in the reaction tube 27, and (b) is a D-D cross-sectional view of (a). In the state shown in FIG. 4, 2
Two wafer supporting jigs 22 and 23 are loaded in the reaction tube 27, and the lower end portion 23 b of the wafer supporting jig 23 is
The reaction tube 27 is sealed with. As a result, the reaction tube 2
It is possible to perform a desired process on the plurality of wafers 21 loaded in the wafer 7.
【００１６】本実施例の半導体製造用縦型炉には、上記
のように、従来のウエハ支持治具の約半分の長さの２つ
のウエハ支持治具と、この２つのウエハ支持治具を水平
面上に配置させ、１つずつ反応管の下方へ移動させた後
に上昇させて反応管に装入するエレベータとが備えられ
ているため、半導体製造用縦型炉の高さを、従来のウエ
ハ支持治具の約半分の長さだけ低くできる。As described above, the vertical furnace for semiconductor manufacturing of this embodiment includes two wafer supporting jigs each having a length about half that of the conventional wafer supporting jigs, and the two wafer supporting jigs. The vertical furnace for semiconductor manufacturing has the same height as that of the conventional wafer because the elevator is arranged on a horizontal plane and is moved to the lower side of the reaction tube one by one and then raised and charged into the reaction tube. It can be lowered by about half the length of the support jig.
【００１７】例えば直径６インチのウエハ１００枚を１
バッチで処理する場合、従来のウエハ支持治具の長さは
６４６ｍｍであるが、本実施例のウエハ支持治具の長さ
は従来の半分の３２３ｍｍになり、この結果、従来高さ
が２３００ｍｍある縦型炉を、高さが１９７７ｍｍの縦
型炉とすることができた。この縦型炉を低くできた長さ
だけ、クリーンルームの天井高さを低くできたため、ク
リーンルームのコストを約１０％低減できた。For example, one 100 wafer having a diameter of 6 inches is used.
In the case of batch processing, the conventional wafer supporting jig has a length of 646 mm, but the wafer supporting jig of this embodiment has a length of 323 mm, which is half the conventional length, resulting in a conventional height of 2300 mm. The vertical furnace could be a vertical furnace with a height of 1977 mm. Since the height of the clean room can be reduced by the length of the vertical furnace, the cost of the clean room can be reduced by about 10%.
【００１８】ここで、上記実施例では、ウエハ支持治具
を２つとしたが更に多くの数にしてもよく、この場合は
それぞれのウエハ支持治具を移動させるエレベータが必
要となる。また、上記実施例では、反応管の開口部を下
端側に形成したが、開口部を上端側に形成しても良い。
この場合は、ウエハ支持治具がウエハ支持治具台から落
下しない構成とし、ウエハ支持治具どおしの接続も、ウ
エハ支持治具が落下しない構成とする。In the above embodiment, the number of wafer supporting jigs is two, but a larger number may be used. In this case, an elevator for moving each wafer supporting jig is required. Further, in the above embodiment, the opening of the reaction tube is formed on the lower end side, but the opening may be formed on the upper end side.
In this case, the wafer supporting jig does not drop from the wafer supporting jig base, and the wafer supporting jig does not drop even when connecting between the wafer supporting jigs.
【００１９】[0019]
【発明の効果】以上説明したように本発明の半導体製造
用縦型炉では、複数に分割されたウエハ支持治具をそれ
ぞれ別個に水平面上で移動させ反応管に順次装入するこ
とができるため、従来の半導体製造用縦型炉に比べ高さ
を低くでき、これにより半導体製造用縦型炉が設置され
るクリーンルームの天井高さを低くできクリーンルーム
のコスト低減を図ることができる。As described above, in the vertical furnace for semiconductor manufacturing of the present invention, a plurality of divided wafer supporting jigs can be individually moved on the horizontal plane and sequentially loaded into the reaction tube. As compared with the conventional vertical furnace for semiconductor manufacturing, the height can be made lower, whereby the ceiling height of the clean room in which the vertical furnace for semiconductor manufacturing is installed can be made lower, and the cost of the clean room can be reduced.
【図１】（ａ）は、ウエハ支持治具台に搭載されたウエ
ハ支持治具が反応管に装入される前の状態を示す断面
図、（ｂ）は（ａ）のＡ−Ａ断面図である。1A is a sectional view showing a state before a wafer supporting jig mounted on a wafer supporting jig base is loaded into a reaction tube, and FIG. 1B is a sectional view taken along line AA of FIG. It is a figure.
【図２】（ａ）は一方のウエハ支持治具が反応管の中に
装入され、他方のウエハ支持治具が開口部の下方に移動
した状態を示す断面図、（ｂ）は（ａ）のＢ−Ｂ断面図
である。FIG. 2A is a cross-sectional view showing a state where one wafer support jig is inserted into a reaction tube and the other wafer support jig is moved below an opening, and FIG. ) Is a B-B cross-sectional view.
【図３】（ａ）は反応管の中に装入された一方のウエハ
支持治具が他方のウエハ支持治具に支えられた状態を示
す断面図、（ｂ）は（ａ）のＣ−Ｃ断面図である。FIG. 3A is a cross-sectional view showing a state where one wafer supporting jig loaded in a reaction tube is supported by the other wafer supporting jig, and FIG. It is C sectional drawing.
【図４】（ａ）は２つのウエハ支持治具が反応管に装入
された状態を示す断面図、（ｂ）は（ａ）のＤ−Ｄ断面
図である。FIG. 4A is a sectional view showing a state where two wafer supporting jigs are loaded in a reaction tube, and FIG. 4B is a sectional view taken along line DD of FIG.
【図５】一方のウエハ支持治具の上端部と、他方のウエ
ハ支持治具の下端部を示す一部拡大図である。FIG. 5 is a partially enlarged view showing an upper end portion of one wafer supporting jig and a lower end portion of the other wafer supporting jig.
【図６】従来の縦型炉の概略構成を示す斜視図である。FIG. 6 is a perspective view showing a schematic configuration of a conventional vertical furnace.
２０ 半導体製造用縦型炉 ２１ ウエハ ２２，２３ ウエハ支持治具 ２５，２６ エレベータ ２５ａ，２６ａ ウエハ支持治具台 20 Vertical Furnace for Manufacturing Semiconductor 21 Wafer 22, 23 Wafer Supporting Jig 25, 26 Elevator 25a, 26a Wafer Supporting Jig Stand
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/324 Ｄ 8617−4Ｍ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H01L 21/324 D 8617-4M
Claims (1)
製造用縦型炉において、 複数枚のウエハを支持する複数のウエハ支持治具と、 前記ウエハ支持治具の出し入れが行われる開口部が上端
側もしくは下端側に形成された、前記ウエハ支持治具が
上下方向一列に装入される反応管と、 複数の前記ウエハ支持治具をそれぞれ保持し、複数の該
ウエハ支持治具を前記開口部近傍の水平面上で移動する
と共に前記反応管に順次装入する昇降機とを備えたこと
を特徴とする半導体製造用縦型炉。1. In a vertical furnace for semiconductor manufacturing for simultaneously processing a plurality of wafers, a plurality of wafer supporting jigs for supporting the plurality of wafers and an opening for inserting and removing the wafer supporting jigs are provided at an upper end. Side or lower end side, the reaction tubes into which the wafer supporting jigs are loaded in a line in the vertical direction, and the plurality of wafer supporting jigs are respectively held, and the plurality of wafer supporting jigs are provided in the opening portion. A vertical furnace for semiconductor production, comprising: an elevator which moves on a horizontal plane in the vicinity and is sequentially charged into the reaction tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34718692A JPH06196429A (en) | 1992-12-25 | 1992-12-25 | Vertical type furnace for manufacture of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34718692A JPH06196429A (en) | 1992-12-25 | 1992-12-25 | Vertical type furnace for manufacture of semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06196429A true JPH06196429A (en) | 1994-07-15 |
Family
ID=18388509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34718692A Withdrawn JPH06196429A (en) | 1992-12-25 | 1992-12-25 | Vertical type furnace for manufacture of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06196429A (en) |
-
1992
- 1992-12-25 JP JP34718692A patent/JPH06196429A/en not_active Withdrawn
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20000307 |