JPH06171937A - Production of indium oxide powder - Google Patents
Production of indium oxide powderInfo
- Publication number
- JPH06171937A JPH06171937A JP4352056A JP35205692A JPH06171937A JP H06171937 A JPH06171937 A JP H06171937A JP 4352056 A JP4352056 A JP 4352056A JP 35205692 A JP35205692 A JP 35205692A JP H06171937 A JPH06171937 A JP H06171937A
- Authority
- JP
- Japan
- Prior art keywords
- indium oxide
- indium
- oxide powder
- electrolysis
- hydroxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、ＩＴＯ膜（Indium-T
in Oxide膜）を始めとした酸化インジウム系表示材料や
酸化インジウム系蛍光体等の製造原料として好適な“酸
化インジウム粉末”の製造方法に関するものである。This invention relates to an ITO film (Indium-T
The present invention relates to a method for producing "indium oxide powder" suitable as a raw material for producing indium oxide-based display materials such as in oxide film) and indium oxide-based phosphors.
【０００２】[0002]
【従来技術とその課題】これまで、亜鉛鉱中に極く微量
含まれていて副産物として回収されていたインジウムの
興味深い特性が次第に明らかになるにつれ、その用途に
関する多くの提案がなされてきたが、近年、インジウム
酸化物、特に“ＩＴＯ”と呼ばれる“Snを含んだインジ
ウム酸化物(In2Ｏ3-SnＯ2)”の薄膜が有する高い導電性
や透明性に注目が集まり、液晶表示装置，薄膜エレクト
ロルミネッセンス表示装置，放射線検出素子，端末機器
の透明タブレット等の多岐にわたる用途が開かれた。2. Description of the Related Art As the interesting characteristics of indium, which was contained in zinc ore in an extremely small amount and was recovered as a by-product, have been gradually revealed, many proposals have been made for its use. In recent years, attention has been focused on the high conductivity and transparency of a thin film of indium oxide, particularly “indium oxide containing Sn (In 2 O 3 —SnO 2 )” called “ITO”. A wide variety of applications such as electroluminescence display devices, radiation detectors, and transparent tablets for terminal equipment were opened.
【０００３】ところで、上述のような装置・機器類の製
造原料として準備される酸化インジウム粉末は、従来、
図３に示す如き工程に従って製造されている。即ち、ま
ず第１段階として、金属インジウムを硝酸で溶解し、こ
れをアンモニア水（ＮＨ4 ＯＨ）で中和する。そして、
この中和によって生じた沈積物（水酸化インジウム）を
ろ過，洗浄，乾燥する。次に、第２段階として、得られ
た水酸化インジウムを焙焼し、酸化インジウム粉末とす
る。なお、このように製造された酸化インジウム粉末
は、スパッタリングタ−ゲット等に成形されてスパッタ
リングによる薄膜の形成に用いられることが多い。By the way, the indium oxide powder prepared as a raw material for manufacturing the above-mentioned devices / equipment has hitherto been
It is manufactured according to the process as shown in FIG. That is, first, as a first step, metallic indium is dissolved with nitric acid, and this is neutralized with aqueous ammonia (NH 4 OH). And
The deposit (indium hydroxide) generated by this neutralization is filtered, washed and dried. Next, as a second step, the obtained indium hydroxide is roasted to obtain indium oxide powder. The indium oxide powder thus produced is often used for forming a thin film by sputtering after being formed into a sputtering target or the like.
【０００４】しかしながら、酸化インジウム粉末の製造
に係る上記方法（中和法）には次のような問題が指摘さ
れた。 a) 得られる酸化インジウム粉末は諸特性（平均粒径，
見掛密度等）のバラツキが大きく、これが酸化インジウ
ム系の表示材料，蛍光体等の“品質バラツキの低減”或
いは“高品質化”の阻害要因となっている。 b) 製造条件（液温，反応速度等）を一定に制御するこ
とが必ずしも容易でなく、これを安定させるために設備
コストが上昇する。 c) 従来とは特性の異なる粉末を要求された場合に、こ
の要求への柔軟な対応ができない。 d) 装置が比較的大掛かりとなり、そのため製造条件を
一定に制御しようとするとかなりの労力を要する上、増
産への対応が必ずしも容易とは言えない。 e) 中和廃液（例えば硝酸アンモニウム）がその都度発
生するのでその処理が必要であり、これがランニングコ
ストを高める。However, the following problems have been pointed out in the above method (neutralization method) for producing indium oxide powder. a) The obtained indium oxide powder has various characteristics (average particle size,
Variations in (apparent density, etc.) are large, and this is an obstacle to "reduction of quality variation" or "high quality" of indium oxide-based display materials, phosphors and the like. b) It is not always easy to control manufacturing conditions (liquid temperature, reaction rate, etc.) at a constant level, and equipment costs increase to stabilize these conditions. c) When powders with different characteristics from the conventional ones are requested, we cannot flexibly respond to this request. d) The equipment is relatively large, so it takes a lot of effort to control the manufacturing conditions to a constant level, and it is not always easy to deal with increased production. e) Neutralization waste liquid (for example, ammonium nitrate) is generated each time and needs to be treated, which increases running costs.
【０００５】このようなことから、本発明が目的とした
のは、上記諸問題を解消し、表示材料や蛍光体の原料等
としての特性に優れた酸化インジウム粉末を製造性良く
安定に、かつコスト安く提供できる手立てを確立するこ
とであった。In view of the above, the object of the present invention is to solve the above-mentioned problems and to produce indium oxide powder excellent in characteristics as a display material, a raw material of a phosphor, etc., with good manufacturability and stability. It was to establish a method that can be offered at low cost.
【０００６】[0006]
【課題を解決するための手段】そこで、本発明者等は上
記目的を達成すべく様々な観点から研究を行ったとこ
ろ、次のような知見を得ることができた。Therefore, the inventors of the present invention have conducted the research from various viewpoints in order to achieve the above object, and have been able to obtain the following findings.
【０００７】酸化インジウムを得るためのか焼前物質た
る“水酸化インジウム”を製造するに際し、従来の如き
“中和法”ではなくて“電解法”を採用すると、比較的
低い設備費やランニングコストの下で安定した条件にて
水酸化インジウムを製造することが可能となる上、これ
をか焼して得られる酸化インジウム粉末の諸特性（平均
粒径，見掛密度等）の幅が非常に広くなり、しかも電解
条件の選択によってこれら諸特性をきめ細かくコントロ
−ルすることも可能である。この場合の“電解法”とし
ては、通常の所謂「平波」による電解法，周期的反転電
流による電解法（ＰＲ電解法）の何れでも良い。When the "electrolysis method" is adopted instead of the conventional "neutralization method" in the production of "indium hydroxide" which is a pre-calcination substance for obtaining indium oxide, the equipment cost and running cost are relatively low. Indium hydroxide can be produced under stable conditions under low temperature, and the range of various characteristics (average particle size, apparent density, etc.) of indium oxide powder obtained by calcination of this is extremely high. It becomes wider, and it is possible to finely control these various characteristics by selecting the electrolysis conditions. In this case, the "electrolysis method" may be either a usual so-called "flat wave" electrolysis method or a periodic reversal current electrolysis method (PR electrolysis method).
【０００８】本発明は、上記知見事項等に基づいてなさ
れたものであり、「インジウムを陽極として電解するこ
とにより得た水酸化インジウムをか焼することによっ
て、 平均粒径や見掛密度等の特性バラツキの小さい酸化
インジウム粉末を安定かつ低コストで、しかも特性コン
トロ−ル容易に製造し得るようにした点」に大きな特徴
を有している。The present invention has been made on the basis of the above findings and the like. "By calcining indium hydroxide obtained by electrolyzing indium as an anode, the average particle size, apparent density, etc. The feature is that the indium oxide powder with small characteristic variations can be manufactured stably and at low cost, and the characteristic control can be easily performed. "
【０００９】ところで、上述のように、本発明に係る酸
化インジウム粉末の製造方法では、従来とは異なってま
ず電解液中で金属インジウムを陽極として電解すること
により水酸化インジウムを析出させ、次いでこれをか焼
（焙焼）するという工程が採られるが、インジウムを陽
極電解する際に適用される電解液については特に指定さ
れるものではなく硝酸アンモニウム，硫酸アンモニウム
或いはその他の電解質等の何れを用いても良いものの、
コストや製品の純度維持の面から硝酸アンモニウム水溶
液が好ましいと言える。By the way, as described above, in the method for producing indium oxide powder according to the present invention, unlike the conventional method, first, indium hydroxide is precipitated by electrolyzing metal indium in the electrolytic solution as an anode, and then this is deposited. The process of calcination (roasting) is carried out, but the electrolytic solution applied at the time of anodic electrolysis of indium is not particularly specified, and any of ammonium nitrate, ammonium sulfate or other electrolytes may be used. Good,
It can be said that an ammonium nitrate aqueous solution is preferable from the viewpoint of cost and maintaining the purity of the product.
【００１０】なお、水酸化インジウム製造時の電解条件
を選択することで、これをか焼して得られる酸化インジ
ウム粉末の平均粒径，比表面積又は見掛密度等の制御が
可能であり、これらの調整は酸化インジウム系の表示材
料，蛍光体等の原料として用いた場合における製品品質
の著しい改善に結びつく。そして、この酸化インジウム
粉末の特性はＸ線回折状況によって比較的容易に確認で
きるので、好適な粉末製造条件の把握も簡単であると言
える。By selecting the electrolysis conditions during the production of indium hydroxide, it is possible to control the average particle size, specific surface area, apparent density, etc. of the indium oxide powder obtained by calcining this. This adjustment will lead to a marked improvement in product quality when used as a raw material for indium oxide-based display materials and phosphors. Since the characteristics of the indium oxide powder can be confirmed relatively easily by the X-ray diffraction condition, it can be said that it is easy to understand the preferable powder manufacturing conditions.
【００１１】図１は、この電解法を取り入れた本発明に
係る“酸化インジウム粉末の製造工程例”を示してい
る。ここで、図１に例示される工程にて本発明に係る
“前記特定の酸化インジウム粉末”をより安定に製造す
るには、好ましくはか焼に供する水酸化インジウムを得
るための“インジウムの電解”をＮＨ3 ＮＯ3 濃度が
0.2〜５mol/L(リットル) 、ｐＨが４〜 9.5、そして浴温が
１０〜５０℃の硝酸アンモニウム水溶液中で実施し、そ
の時の電流密度を１００〜１８００Ａ／ｍ2 の範囲に制
御するのが良い。FIG. 1 shows an "indium oxide powder manufacturing process example" according to the present invention incorporating this electrolysis method. Here, in order to more stably produce the “specific indium oxide powder” according to the present invention in the process illustrated in FIG. 1, preferably, “electrolysis of indium for obtaining indium hydroxide for calcination” is performed. The NH 3 NO 3 concentration is
It is preferable to carry out the treatment in an ammonium nitrate aqueous solution having a concentration of 0.2 to 5 mol / L (liter), a pH of 4 to 9.5, and a bath temperature of 10 to 50 ° C, and to control the current density at that time to 100 to 1800 A / m 2. .
【００１２】つまり、電解浴（硝酸アンモニウム水溶
液）のＮＨ3 ＮＯ3 濃度が 0.2mol/Lを下回ると電流効
率低下又は電力原単位上昇を招く恐れがあり、また５mo
l/L を超えると薬品消費量の増大が無視できなくなる。
そして、浴のｐＨが４を下回ると水酸化物が微細化し固
液分離困難となり、一方、9.5 を上回る浴の取扱いは安
全上もしくは環境防災上好ましくないので、これを避け
るのが通例である。浴温については、１０℃未満に調整
することは冷却コストの点で不利となり、一方、５０℃
を超える温度に維持しようとすると加熱コストが無視で
きなくなる上、特にＮＨ3 ＮＯ3 の場合にはアンモニア
蒸気発生に対応した環境対策が必要となる。更に、電流
密度については、１００Ａ／ｍ2 を下回ると装置が大型
となり生産性も良くない。一方、１８００Ａ／ｍ2 を上
回ると槽電圧の上昇が顕著となり経済的に不利になる。That is, if the concentration of NH 3 NO 3 in the electrolytic bath (aqueous solution of ammonium nitrate) is less than 0.2 mol / L, the current efficiency may be lowered or the power consumption may be increased.
If it exceeds l / L, the increase in chemical consumption cannot be ignored.
If the pH of the bath is less than 4, the hydroxide becomes fine and solid-liquid separation becomes difficult. On the other hand, handling a bath of more than 9.5 is not preferable from the viewpoint of safety or environmental disaster prevention. Therefore, it is usually avoided. Regarding the bath temperature, adjusting the temperature below 10 ° C is disadvantageous in terms of cooling cost, while 50 ° C
If it is attempted to maintain the temperature above, the heating cost cannot be ignored, and especially in the case of NH 3 NO 3 , environmental measures corresponding to the generation of ammonia vapor are required. Further, with respect to the current density, if it is less than 100 A / m 2 , the device becomes large and the productivity is not good. On the other hand, when it exceeds 1800 A / m 2 , the cell voltage rises remarkably, which is economically disadvantageous.
【００１２】さて、本発明に係る「酸化インジウムの製
造方法」によると次のような利点を享受することができ
るので、その産業上の寄与は非常に大きいと言わねばな
らない。 1) 得られる酸化インジウム粉末の“諸特性（平均粒
径，見掛密度等）の幅”が広く、これらを電解条件の選
択によってコントロ−ルできる。 2) か焼に供する中間原料たる水酸化インジウムの製造
が電解法にて行われるので連続方式が採用でき、バッチ
方式の従来法（中和法）に比べて品質管理が容易で、品
質そのものも安定する。 3) 電解条件の選択により最終的に得られる酸化インジ
ウム粉末の諸特性を微妙にコントロ−ルできるため、こ
れを使用する酸化インジウム系の表示材料や蛍光体等の
高品質化や品質バラツキの低減が達成できる。 4) 所謂“クロ−ズドシステム”化ができるので、中和
の都度に硝酸アンモニウムの廃液が発生していた従来法
に比べてランニングコストの大幅な低減が達成される。 5) 装置がコンパクトであるので、イニシャルコスト
（建設費）も安価となり増産への対応がしやすい。According to the "method for producing indium oxide" of the present invention, the following advantages can be enjoyed, and it must be said that its industrial contribution is extremely large. 1) The obtained indium oxide powder has a wide range of "characteristics (average particle size, apparent density, etc.)", and these can be controlled by selecting the electrolysis conditions. 2) Since indium hydroxide, which is an intermediate raw material for calcination, is produced by an electrolytic method, a continuous method can be adopted, and quality control is easier than the conventional batch method (neutralization method), and the quality itself is Stabilize. 3) Since various characteristics of the finally obtained indium oxide powder can be delicately controlled by selecting the electrolysis conditions, it is possible to improve the quality of indium oxide-based display materials and phosphors that use this and reduce quality variations. Can be achieved. 4) Since a so-called "closed system" can be created, a significant reduction in running cost can be achieved compared to the conventional method in which ammonium nitrate waste liquid was generated each time neutralization was performed. 5) Since the device is compact, the initial cost (construction cost) is low and it is easy to deal with increased production.
【００１３】なお、本発明に係る酸化インジウム粉末
は、これを前述したＩＴＯスパッタリングタ−ゲットに
成形してＩＴＯ膜の形成に用いた場合に特に優れた結果
を得ることができるが、酸化インジウム粉末からＩＴＯ
タ−ゲットを製造するには、一般に図２で示した工程が
採られる。The indium oxide powder according to the present invention can obtain particularly excellent results when it is used for forming an ITO film by molding it into the above-mentioned ITO sputtering target. To ITO
To manufacture the target, the steps shown in FIG. 2 are generally adopted.
【００１４】続いて、本発明を実施例によって更に具体
的に説明する。Next, the present invention will be described more specifically by way of examples.
〈実施例１〉１０℃の硝酸アンモニウム水溶液（ＮＨ3
ＮＯ3 濃度：0.5mol/L，ｐＨ：８）中において、金属イ
ンジウムを陽極とし、陰極電流密度１２００Ａ／ｍ2 で
通電して電解を行った。そして、電解槽底の沈積物をろ
過，洗浄及び乾燥し、水酸化インジウムを得た。次に、
これを１１００℃で焙焼し、平均粒径 2.8μｍ，見掛密
度1.99ｇ/cm3の酸化インジウム粉末を得た。<Example 1> Ammonium nitrate aqueous solution (NH 3
Electrolysis was performed in NO 3 concentration: 0.5 mol / L, pH: 8) by using metal indium as an anode and energizing at a cathode current density of 1200 A / m 2 . Then, the deposit on the bottom of the electrolytic cell was filtered, washed and dried to obtain indium hydroxide. next,
This was roasted at 1100 ° C. to obtain indium oxide powder having an average particle size of 2.8 μm and an apparent density of 1.99 g / cm 3 .
【００１５】次いで、得られた上記酸化インジウムと別
途調整した酸化錫とを原料として、コ−ルドプレス大気
焼結法によりSnＯ2 含有割合が１０wt％のＩＴＯスパッ
タリングタ−ゲットを製造したところ、焼結体の密度は
4.88ｇ/cm3であった。Then, an ITO sputtering target having a SnO 2 content of 10 wt% was produced by cold press air sintering using the obtained indium oxide and separately prepared tin oxide as raw materials. Body density is
It was 4.88 g / cm 3 .
【００１６】更に、このＩＴＯタ−ゲットをスパッタし
て得られた透明導電膜のシ−ト抵抗や透過率等の諸特性
を調査したところ、ＬＣＤ（液晶）用としても十分に使
用可能な満足できる結果を示すことが確認された。Furthermore, various characteristics such as sheet resistance and transmittance of a transparent conductive film obtained by sputtering this ITO target were investigated, and it was found that it was satisfactory enough for LCD (liquid crystal) use. It was confirmed to show the possible results.
【００１７】〈実施例２〉電解浴として浴温：５０℃，
ＮＨ3 ＮＯ3 濃度：1.0mol/L，ｐＨ：６の硝酸アンモニ
ウム水溶液を使用した以外は、実施例１の場合と同一条
件で金属インジウムの電解を行い、電解槽底の沈積物を
ろ過，洗浄及び乾燥して水酸化インジウムを得た。<Embodiment 2> Bath temperature: 50 ° C. as an electrolytic bath
NH 3 NO 3 concentration: 1.0 mol / L, pH: 6, except that an ammonium nitrate aqueous solution was used, electrolysis of indium metal was carried out under the same conditions as in Example 1, and the deposit on the bottom of the electrolytic cell was filtered, washed and It was dried to obtain indium hydroxide.
【００１８】次に、これを１１００℃で焙焼したとこ
ろ、平均粒径0.47μｍ，見掛密度0.84ｇ/cm3の酸化イン
ジウム粉末が得られた。Then, when this was roasted at 1100 ° C., indium oxide powder having an average particle size of 0.47 μm and an apparent density of 0.84 g / cm 3 was obtained.
【００１９】次いで、得られた酸化インジウムを使用
し、実施例１におけると同様にSnＯ2含有割合が１０wt
％のＩＴＯスパッタリングタ−ゲットを製造したとこ
ろ、焼結体の密度は4.78ｇ/cm3であった。Then, using the obtained indium oxide, the SnO 2 content was 10 wt% as in Example 1.
% ITO sputtering target was manufactured, and the density of the sintered body was 4.78 g / cm 3 .
【００２０】このＩＴＯタ−ゲットをスパッタし、得ら
れた透明導電膜のシ−ト抵抗や透過率等の諸特性を調査
したところ、ＬＣＤ用としても十分に使用可能な満足で
きる結果を示すことが確認された。When this ITO target was sputtered and various characteristics such as sheet resistance and transmittance of the obtained transparent conductive film were investigated, it was shown that it can be used satisfactorily for LCD. Was confirmed.
【００２１】[0021]
【効果の総括】以上に説明した如く、この発明によれ
ば、例えばＩＴＯ膜形成用スパッタリングタ−ゲットの
原材料等としても十分に満足できる酸化インジウム粉末
を、要求特性に幅広く的確に対応しつつ低コストで提供
することが可能となるなど、産業上有用な効果がもたら
される。[Summary of Effects] As described above, according to the present invention, for example, an indium oxide powder that is sufficiently satisfactory as a raw material for a sputtering target for forming an ITO film and the like can be produced while satisfying a wide range of required characteristics and accurately. It is possible to provide it at a cost, which brings about a useful effect in industry.
【図１】本発明の“酸化インジウム粉末の製造工程”に
関する概要説明図である。FIG. 1 is a schematic explanatory diagram regarding “a manufacturing process of indium oxide powder” of the present invention.
【図２】酸化インジウム粉末からのＩＴＯスパッタリン
グタ−ゲットの製造工程説明図である。FIG. 2 is an explanatory diagram of a manufacturing process of an ITO sputtering target from indium oxide powder.
【図３】従来の“酸化インジウム粉末製造工程”に関す
る概要説明図である。FIG. 3 is a schematic explanatory diagram relating to a conventional “indium oxide powder manufacturing process”.
Claims (2)
より得た水酸化インジウムをか焼することを特徴とす
る、酸化インジウム粉末の製造方法。1. A method for producing indium oxide powder, which comprises calcining indium hydroxide obtained by electrolyzing indium as an anode.
インジウムの電解を行うことを特徴とする、請求項１に
記載の酸化インジウム粉末の製造方法。2. The method for producing indium oxide powder according to claim 1, wherein indium is electrolyzed using an aqueous ammonium nitrate solution as an electrolytic solution.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4352056A JP2829556B2 (en) | 1992-12-09 | 1992-12-09 | Method for producing indium oxide powder |
| US08/164,125 US5417816A (en) | 1992-12-09 | 1993-12-07 | Process for preparation of indium oxide-tin oxide powder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4352056A JP2829556B2 (en) | 1992-12-09 | 1992-12-09 | Method for producing indium oxide powder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06171937A true JPH06171937A (en) | 1994-06-21 |
| JP2829556B2 JP2829556B2 (en) | 1998-11-25 |
Family
ID=18421486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4352056A Expired - Lifetime JP2829556B2 (en) | 1992-12-09 | 1992-12-09 | Method for producing indium oxide powder |
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| Country | Link |
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| JP (1) | JP2829556B2 (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5580496A (en) * | 1993-04-05 | 1996-12-03 | Sumitomo Metal Mining Company Limited | Raw material for producing powder of indium-tin oxide aciculae and method of producing the raw material, powder of indium-tin oxide aciculae and method of producing the powder, electroconductive paste and light-transmitting |
| KR100477717B1 (en) * | 1997-07-02 | 2005-07-12 | 삼성에스디아이 주식회사 | Method for producing indium oxide particles |
| JP2007314413A (en) * | 2006-04-27 | 2007-12-06 | Mitsui Mining & Smelting Co Ltd | Method for producing indium oxide powder, method for producing granulated indium metal, and method for producing indium salt solution |
| JP2013023761A (en) * | 2011-07-26 | 2013-02-04 | Jx Nippon Mining & Metals Corp | Method for producing indium hydroxide |
| JP2013036074A (en) * | 2011-08-05 | 2013-02-21 | Jx Nippon Mining & Metals Corp | Method of producing indium hydroxide and compound including indium hydroxide |
| JP2014074224A (en) * | 2012-09-13 | 2014-04-24 | Sumitomo Metal Mining Co Ltd | Method for producing indium hydroxide powder, method for producing indium oxide powder, and spattering target |
| JP2014088599A (en) * | 2012-10-30 | 2014-05-15 | Sumitomo Metal Mining Co Ltd | Manufacturing installation of metalhydroxide, manufacturing method of metalhydroxide, and sputtering target |
| WO2014192650A1 (en) * | 2013-05-27 | 2014-12-04 | 住友金属鉱山株式会社 | Method for producing indium hydroxide powder, method for producing indium oxide powder, and sputtering target |
| JP2015067901A (en) * | 2013-10-01 | 2015-04-13 | 株式会社アルバック | Production method of metal hydroxide, and manufacturing method of sputtering target |
| JP2015086442A (en) * | 2013-10-31 | 2015-05-07 | 住友金属鉱山株式会社 | Method of producing indium hydroxide powder |
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| CN109706467A (en) * | 2019-03-04 | 2019-05-03 | 河北恒博新材料科技股份有限公司 | The method of electrolytic preparation oxide of high activity indium |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6119622B2 (en) | 2014-01-29 | 2017-04-26 | 住友金属鉱山株式会社 | Method for producing indium hydroxide powder and cathode |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63195101A (en) * | 1987-02-09 | 1988-08-12 | Tosoh Corp | Production of metallic oxide |
-
1992
- 1992-12-09 JP JP4352056A patent/JP2829556B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63195101A (en) * | 1987-02-09 | 1988-08-12 | Tosoh Corp | Production of metallic oxide |
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