JPH06164286A - Manufacture of surface acoustic wave resonator - Google Patents
Manufacture of surface acoustic wave resonatorInfo
- Publication number
- JPH06164286A JPH06164286A JP8031492A JP8031492A JPH06164286A JP H06164286 A JPH06164286 A JP H06164286A JP 8031492 A JP8031492 A JP 8031492A JP 8031492 A JP8031492 A JP 8031492A JP H06164286 A JPH06164286 A JP H06164286A
- Authority
- JP
- Japan
- Prior art keywords
- surface acoustic
- acoustic wave
- electrode
- wave resonator
- changing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、通信機器に用いられる
弾性表面波共振子の製造方法、特に、ラブ波型弾性表面
波共振子の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a surface acoustic wave resonator used in communication equipment, and more particularly to a method of manufacturing a Love wave type surface acoustic wave resonator.
【０００２】[0002]
【従来の技術】従来のラブ波型弾性表面共振子は、金な
どの重い金属をＩＤＴ（Ｉｎｔｅｒ−Ｄｉｇｉｔａｌ
Ｔｒａｎｓｄｕｃｅｒ：交差指変換器またはすだれ状変
換器）電極として単結晶圧電基板に形成することによっ
てラブ波型弾性表面波を励振させている。このような従
来のラブ波型弾性表面波共振子の共振周波数設定は交差
指電極のピッチ（間隔）を加減することで行っている。
すなわち弾性表面波共振子の共振周波数を変更する場
合、電極指の幅Ｗに対するピッチＰの比Ｗ／Ｐを一定と
して設定している。例えば、図３（Ａ）のＩＤＴ電極指
３（Ｗ’／Ｐ’＝０．５）を図３（Ｂ）のように電極ピ
ッチをＰ’からＰ”に変更（Ｗ”／Ｐ”＝０．５）し、
さらに電極膜厚をＨからＨ’に変えている。そのためマ
スクの変更や電極膜厚を変えた試料が必要であった。2. Description of the Related Art A conventional Love wave type surface acoustic wave resonator uses a heavy metal such as gold for IDT (Inter-Digital).
(Transducer: interdigital transducer or interdigital transducer) A Love wave type surface acoustic wave is excited by forming the electrode on a single crystal piezoelectric substrate. The resonance frequency of the conventional Love wave type surface acoustic wave resonator is set by adjusting the pitch (interval) of the interdigital electrodes.
That is, when changing the resonance frequency of the surface acoustic wave resonator, the ratio W / P of the pitch P to the width W of the electrode finger is set to be constant. For example, the electrode pitch of the IDT electrode finger 3 (W '/ P' = 0.5) in FIG. 3A is changed from P'to P "as shown in FIG. 3B (W" / P "= 0. .5),
Furthermore, the electrode film thickness is changed from H to H '. Therefore, it was necessary to prepare samples with different masks and different electrode film thicknesses.
【０００３】[0003]
【発明が解決しようとする課題】従って、共振周波数を
変更する場合には、その都度電極パターンのマスクを変
更して再製作し、さらに電極の膜厚を変えた試料が必要
であり、製作期間とコストがかかる等の問題があった。
本発明の目的は電極ピッチを変更しないで共振周波数の
変更を行えるようにした弾性表面波共振子の製造方法を
提供することにある。Therefore, when changing the resonance frequency, it is necessary to change the mask of the electrode pattern and re-produce each time, and it is necessary to prepare a sample in which the film thickness of the electrode is changed. There was a problem such as costly.
It is an object of the present invention to provide a method of manufacturing a surface acoustic wave resonator capable of changing the resonance frequency without changing the electrode pitch.
【０００４】[0004]
【課題を解決するための手段】本発明の弾性表面波共振
子の製造方法は、圧電基板上に比重の大きい重金属によ
るすだれ状電極変換器を形成させて電気機械結合係数の
大きいラブ波型弾性表面波共振子を製造する際に、前記
すだれ状電極変換器の電極指の幅Ｗの電極ピッチＰに対
する比Ｗ／Ｐが一定値の電極形成用のマスクを用いレジ
スト露光の光量を加減することにより、前記比Ｗ／Ｐが
０．３〜０．７の範囲の所望の値のすだれ状電極変換器
を形成して所望の共振周波数を得るようにしたことを特
徴とするものである。弾性表面波共振子のＩＤＴ電極を
作成するフォトリソグラフィのプロセスには、フォトレ
ジスト塗布，露光，現像などの工程がある。これらの各
工程の処理時間などの条件と方法、例えば、レジスト露
光の際の光量を加減することによりピッチＰを変えず電
極指幅Ｗを変えることが可能である。この場合はマスク
等を再作成せずに共振周波数を変更することができる。
以下図面により本発明を詳細に説明する。According to the method of manufacturing a surface acoustic wave resonator of the present invention, a comb-shaped electrode transducer made of heavy metal having a large specific gravity is formed on a piezoelectric substrate to form a Love wave type elastic member having a large electromechanical coupling coefficient. When manufacturing a surface acoustic wave resonator, the light quantity of resist exposure is adjusted using a mask for electrode formation in which the ratio W / P of the width W of the electrode fingers of the interdigital transducer is constant. Thus, the interdigital transducer having a desired value with the ratio W / P in the range of 0.3 to 0.7 is formed to obtain a desired resonance frequency. A photolithography process for forming an IDT electrode of a surface acoustic wave resonator includes processes such as photoresist coating, exposure, and development. It is possible to change the electrode finger width W without changing the pitch P by adjusting the conditions and methods such as the processing time of each of these steps, for example, by adjusting the amount of light during resist exposure. In this case, the resonance frequency can be changed without recreating a mask or the like.
The present invention will be described in detail below with reference to the drawings.
【０００５】図１は本発明の実施例を示す構造図であ
り、（Ａ）は実施例の全体を示す平面図、（Ｂ）はその
ＡＡ部分断面図である。図において、１は圧電基板、２
はＩＤＴ、３は電極指を示す。（Ｂ）に示した実施例
は、Ｗ／Ｐ＝０．５のときのマスクを用いて電極ピッチ
Ｐ及び膜厚Ｈを変えずに電極指幅Ｗを変えてＷ／Ｐ＞
０．５にしたものである。図２は２５０ＭＨｚ帯におけ
る電極指幅と電極ピッチの比（Ｗ／Ｐ）と共振周波数の
関係を示す。図から明らかなように、共振周波数が２６
０ＭＨｚのときのＷ／Ｐ＝０．５のときのマスクを用い
てＷ／Ｐを０．３〜０．７の範囲で変えることにより共
振周波数を２５０〜２８０ＭＨｚの範囲で変えることが
できる。FIG. 1 is a structural view showing an embodiment of the present invention, (A) is a plan view showing the whole embodiment, and (B) is a sectional view taken along the line AA. In the figure, 1 is a piezoelectric substrate, 2
Indicates an IDT and 3 indicates an electrode finger. In the example shown in (B), using the mask when W / P = 0.5, the electrode finger width W is changed without changing the electrode pitch P and the film thickness H, and W / P>
It is set to 0.5. FIG. 2 shows the relationship between the ratio of electrode finger width to electrode pitch (W / P) and the resonance frequency in the 250 MHz band. As is clear from the figure, the resonance frequency is 26
The resonance frequency can be changed in the range of 250 to 280 MHz by changing the W / P in the range of 0.3 to 0.7 by using the mask in the case of 0 / W / P = 0.5.
【０００６】[0006]
【発明の効果】以上詳細に説明したように、本発明を実
施することにより、共振周波数の変更に即応して所望の
周波数の弾性表面波共振子を電極パターンのマスクを新
しく作ることなく短い製作期間と低コストで提供するこ
とができるため大きい効果がある。As described in detail above, by implementing the present invention, a surface acoustic wave resonator having a desired frequency can be manufactured in a short time without making a new mask of an electrode pattern in response to a change in resonance frequency. It can be provided in a short period of time and at low cost, which has a great effect.
【図１】本発明の実施例を示す平面図と部分断面図であ
る。FIG. 1 is a plan view and a partial cross-sectional view showing an embodiment of the present invention.
【図２】本発明による弾性表面波共振子の電極幅と電極
ピッチの比（Ｗ／Ｐ）と共振周波数の関係を示す図であ
る。FIG. 2 is a diagram showing the relationship between the electrode width / electrode pitch ratio (W / P) and the resonance frequency of the surface acoustic wave resonator according to the present invention.
【図３】従来の例を示す部分断面図である。FIG. 3 is a partial cross-sectional view showing a conventional example.
１ 圧電基板 ２ ＩＤＴ ３ 電極指 1 piezoelectric substrate 2 IDT 3 electrode finger
───────────────────────────────────────────────────── フロントページの続き (72)発明者 神田 正 東京都港区虎ノ門二丁目３番13号 国際電 気株式会社内 (72)発明者 清水 洋 宮城県仙台市太白区八木山本町一丁目22番 12号 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Tadashi Kanda 2-3-13 Toranomon, Minato-ku, Tokyo International Electric Co., Ltd. Number 12
Claims (1)
すだれ状電極変換器を形成させて電気機械結合係数の大
きいラブ波型弾性表面波共振子を製造する際に、 前記すだれ状電極変換器の電極指の幅Ｗの電極ピッチＰ
に対する比Ｗ／Ｐが一定値の電極形成用のマスクを用い
レジスト露光の光量を加減することにより、前記比Ｗ／
Ｐが０．３〜０．７の範囲の所望の値のすだれ状電極変
換器を形成して所望の共振周波数を得るようにした弾性
表面波共振子の製造方法。1. When manufacturing a Love wave type surface acoustic wave resonator having a large electromechanical coupling coefficient by forming a interdigital transducer with a heavy metal having a large specific gravity on a piezoelectric substrate, the interdigital transducer of the interdigital transducer is used. Electrode pitch P of electrode finger width W
The ratio W / P is set to a constant value by using a mask for electrode formation to adjust the light amount of the resist exposure to obtain the ratio W / P.
A method of manufacturing a surface acoustic wave resonator, wherein a P-shaped electrode transducer having a desired value in the range of 0.3 to 0.7 is formed to obtain a desired resonance frequency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8031492A JPH06164286A (en) | 1992-03-03 | 1992-03-03 | Manufacture of surface acoustic wave resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8031492A JPH06164286A (en) | 1992-03-03 | 1992-03-03 | Manufacture of surface acoustic wave resonator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06164286A true JPH06164286A (en) | 1994-06-10 |
Family
ID=13714806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8031492A Pending JPH06164286A (en) | 1992-03-03 | 1992-03-03 | Manufacture of surface acoustic wave resonator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06164286A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0993072A (en) * | 1995-09-26 | 1997-04-04 | Fujitsu Ltd | Surface acoustic wave filter |
| US6437668B1 (en) * | 1999-05-07 | 2002-08-20 | Murata Manufacturing Co., Ltd. | Surface acoustic wave resonator, surface acoustic wave device, and communication device using shear horizontal waves |
-
1992
- 1992-03-03 JP JP8031492A patent/JPH06164286A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0993072A (en) * | 1995-09-26 | 1997-04-04 | Fujitsu Ltd | Surface acoustic wave filter |
| US6437668B1 (en) * | 1999-05-07 | 2002-08-20 | Murata Manufacturing Co., Ltd. | Surface acoustic wave resonator, surface acoustic wave device, and communication device using shear horizontal waves |
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