JPH06151368A - Dry etching device - Google Patents
Dry etching deviceInfo
- Publication number
- JPH06151368A JPH06151368A JP29429292A JP29429292A JPH06151368A JP H06151368 A JPH06151368 A JP H06151368A JP 29429292 A JP29429292 A JP 29429292A JP 29429292 A JP29429292 A JP 29429292A JP H06151368 A JPH06151368 A JP H06151368A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- upper electrode
- rotating
- plate
- dry etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はドライエッチング装置に
関し、特に上部電極よりエッチングガスをエッチングチ
ャンバー内へ方向性を持たせて取り入れる平行平板型リ
アクティブイオンエッチング（ＲＩＥ）装置に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dry etching apparatus, and more particularly to a parallel plate type reactive ion etching (RIE) apparatus which takes in an etching gas from an upper electrode into the etching chamber with directivity.
【０００２】[0002]
【従来の技術】図７は従来のこの種のドライエッチング
装置の構成を示す断面図であって、装置内部に上部電極
１と下部電極２とを有しており、両電極間に高周波電波
（以下ＲＦと言う）が印加される。ガス導入管４を通し
て導入されたエッチングガスは、上部電極１にあけられ
ている多数のガス透過孔１ａを通ってエッチング室６に
導入される。エッチング室６へ導入されたガスは、ＲＦ
印加状態でプラズマと化し、下部電極２上に置かれてい
る被エッチング体である半導体基板３をエッチングした
後、反応生成物と共に多数のガス排気管５から排気され
る。2. Description of the Related Art FIG. 7 is a sectional view showing the structure of a conventional dry etching apparatus of this type, which has an upper electrode 1 and a lower electrode 2 inside the apparatus, and a high frequency radio wave ( Hereinafter referred to as RF) is applied. The etching gas introduced through the gas introduction pipe 4 is introduced into the etching chamber 6 through a large number of gas permeation holes 1 a formed in the upper electrode 1. The gas introduced into the etching chamber 6 is RF
After being turned into plasma in the applied state and the semiconductor substrate 3 which is the object to be etched placed on the lower electrode 2 is etched, it is exhausted from a large number of gas exhaust pipes 5 together with reaction products.
【０００３】[0003]
【発明が解決しようとする課題】この従来のドライエッ
チング装置では、ガスが上部電極１から半導体基板３の
上に均一に吹き出され、基板の外周部より排気されるた
め、次の問題点がある。すなわち、(1) 半導体基板３と
エッチングガスとで反応生成物が生じるが、その濃度即
ちガス成分が基板の中央部と周辺部とで異なり、このた
め基板のエッチング形状が中央部と周辺部とで異なり、
その上(2) 基板上を流れるガス速度が基板の中央部と周
辺部とで異なるため、反応生成物の置換効率が異なり、
特に深さと底辺の比が大きい高アスペクトのコンタクト
のエッチングにおいては、基板の中央部と周辺部とで形
状差が生じてしまう。This conventional dry etching apparatus has the following problems because the gas is uniformly blown from the upper electrode 1 onto the semiconductor substrate 3 and exhausted from the outer peripheral portion of the substrate. . That is, (1) a reaction product is generated between the semiconductor substrate 3 and the etching gas, but the concentration, that is, the gas component, is different between the central portion and the peripheral portion of the substrate, so that the etching shape of the substrate is different between the central portion and the peripheral portion. Is different in
Moreover, (2) the gas velocities flowing on the substrate are different between the central part and the peripheral part of the substrate, so the replacement efficiency of the reaction products is different
Particularly in the etching of a high aspect contact having a large depth / bottom ratio, a difference in shape occurs between the central portion and the peripheral portion of the substrate.
【０００４】図６はこの従来技術で得られたコンタクト
の形状を示す図面である。半導体基板の中央部（左）と
周辺部（右）では形状が異なっていることが分かる。な
おこの図６において、コンタクト径は約０．６μｍ、破
線から上のＢＰＳＧ膜厚は約１．６μｍである。FIG. 6 is a drawing showing the shape of the contact obtained by this conventional technique. It can be seen that the central portion (left) and the peripheral portion (right) of the semiconductor substrate have different shapes. In FIG. 6, the contact diameter is about 0.6 μm, and the BPSG film thickness above the broken line is about 1.6 μm.
【０００５】従って本発明は、出来上がりの形状が中央
部と周辺部で異ならないような、すなわち一様なエッチ
ングの可能なドライエッチング装置を提供しようとする
ものである。Therefore, the present invention is intended to provide a dry etching apparatus in which the finished shape does not differ between the central portion and the peripheral portion, that is, uniform etching is possible.
【０００６】[0006]
【課題を解決するための手段】本発明のドライエッチン
グ装置は、上記の目的を達成するために、基板上のガス
成分の均一化及びガス流速の均一化を図ρとするもので
ある。In order to achieve the above-mentioned object, the dry etching apparatus of the present invention makes the gas components on the substrate uniform and the gas flow velocity uniform as shown in FIG.
【０００７】すなわち本発明によれば、被エッチング体
を保持する下方電極と、少なくとも中心部以外の部分に
ほぼ均等にガス透過孔を設けた上部電極と、該上部電極
の上方に設けられたガス導入管と、底板の前記下方電極
の周辺にほぼ均等の間隔に設けられた複数のガス排出管
とを含む平行平板型ＲＩＥ装置において、前記上方電極
に近接して、回転可能であって、いずれの回転位置にお
いても前記上方電極に設けられた多数のガス通過孔の内
の限られた一部分に対向する開口部を有する回転板と、
該回転板を回転させる駆動手段とを備えたことを特徴と
するドライエッチング装置が得られる。That is, according to the present invention, the lower electrode for holding the object to be etched, the upper electrode in which gas permeation holes are substantially evenly provided in at least a portion other than the central portion, and the gas provided above the upper electrode are provided. In a parallel plate type RIE device including an introduction pipe and a plurality of gas discharge pipes provided at substantially equal intervals around the lower electrode of the bottom plate, the parallel plate type RIE device is rotatable near the upper electrode. A rotating plate having an opening facing a limited part of a large number of gas passage holes provided in the upper electrode even in the rotating position of
It is possible to obtain a dry etching apparatus characterized by comprising a driving means for rotating the rotary plate.
【０００８】また本発明によれば、被エッチング体を保
持する下方電極と、ほぼ均等にガス通過孔を多数設けた
上部電極と、該上部電極の上方に設けられたガス導入管
と、底板の前記下方電極の周辺にほぼ均等の間隔に設け
られた複数のガス排出管とを有する平行平板型ＲＩＥ装
置において、前記底板に近接して、回転可能であって、
いずれの回転位置においても前記底板に設けられたガス
排出管のの内の少なくとも１つに対向する開口部を有す
る環状の回転板と、該回転板を回転させる駆動手段とを
備えたことを特徴とするドライエッチング装置が得られ
る。Further, according to the present invention, the lower electrode for holding the object to be etched, the upper electrode provided with a large number of gas passage holes substantially evenly, the gas introducing pipe provided above the upper electrode, and the bottom plate are provided. In a parallel plate type RIE device having a plurality of gas discharge pipes provided at substantially equal intervals around the lower electrode, the parallel plate type RIE device is rotatable near the bottom plate,
An annular rotary plate having an opening facing at least one of the gas discharge pipes provided on the bottom plate at any rotational position, and a drive means for rotating the rotary plate. A dry etching apparatus is obtained.
【０００９】[0009]
【実施例】図１は本発明の第１の実施例であるドライエ
ッチング装置の縦断面図であり、図２は回転板より上の
部分を取り去って上部から見た断面図である。両図を併
せ参照して説明すると、エッチング室６は多数のガス透
過孔１ａを持つ上部電極１と、被エッチング体である半
導体基板３を載せた下部電極２とを有しており、両電極
間にはＲＦが印加される。エッチングガスはガス導入管
４から回転板８の開口部９を経て、この開口部直下の上
部電極１のガス透過孔１ａを通ってエッチング室６内へ
供給される。ガス透過孔１ａは細くて多数配置されてい
るので、開口部９が対向するガス透過孔は比較的に多
い。そしてこのような開口部９は、半導体基板３の中央
部よりずれた位置にあるため、導入されたガスの大部分
は多数の小さな矢印１２に示すように流れ、相当部分が
半導体基板３を横切る形となり、排気管５から排出され
る。1 is a vertical cross-sectional view of a dry etching apparatus according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view taken from above with a portion above a rotary plate removed. Explaining with reference to both figures, the etching chamber 6 has an upper electrode 1 having a large number of gas permeation holes 1a and a lower electrode 2 on which a semiconductor substrate 3 to be etched is placed. RF is applied in between. The etching gas is supplied into the etching chamber 6 from the gas introduction pipe 4 through the opening 9 of the rotary plate 8 and the gas permeation hole 1a of the upper electrode 1 immediately below the opening. Since the gas permeation holes 1a are thin and arranged in large numbers, the number of gas permeation holes facing the openings 9 is relatively large. Since such an opening 9 is located at a position displaced from the central portion of the semiconductor substrate 3, most of the introduced gas flows as indicated by a number of small arrows 12, and a considerable portion crosses the semiconductor substrate 3. It takes a shape and is discharged from the exhaust pipe 5.
【００１０】上記の回転板８は、その周辺に対の内部磁
石１０を備え、エッチング室６の外部を回転する対の外
部磁石１１に引きつけられ、矢印１２に示す回転方向に
同速度で回転する。その回転速度は普通の条件では２〜
１０ｒｐｍ程度が適当である。この回転により半導体基
板３上のガス吹き出し位置は時間とともに変化し、基板
上の任意の位置のガス成分、即ちエッチングガスと反応
生成物の比率、は均等になる。また半導体基板３上のガ
スの流れ速度も一様になる。かくして半導体基板３上の
被エッチング体を任意の位置で形状差なくエッチングす
ることが可能となる。The rotating plate 8 is provided with a pair of internal magnets 10 around the rotating plate 8 and is attracted by a pair of external magnets 11 rotating outside the etching chamber 6 and rotates at the same speed in the rotation direction indicated by an arrow 12. . Its rotation speed is 2 under normal conditions.
About 10 rpm is suitable. By this rotation, the gas blowing position on the semiconductor substrate 3 changes with time, and the gas components at arbitrary positions on the substrate, that is, the ratio of the etching gas and the reaction product, become equal. Further, the gas flow velocity on the semiconductor substrate 3 also becomes uniform. Thus, it becomes possible to etch the body to be etched on the semiconductor substrate 3 at any position without any difference in shape.
【００１１】図３は第２の実施例の装置の縦断面図であ
り、図４は図３の装置をＡ−Ａ′で切断して上方から見
た断面図である。全般的な構成は第１の実施例と同じで
あるが、開口部１５を有する回転板１４が、下部電極２
の側部の底面上に、排気管５の吸込口に接して設置され
ている点が異なっている。なお開口部１５は、どの回転
角に位置していても、多数あるガス排気管５の少なくと
も１つに対向するような形状を持たせてある。これによ
り上部電極１より均等に送り込まれたエッチングガス
は、回転板１４の開口部１５の方向へ流れる。そこでこ
の回転板１４を前述の特定の速度で回転させることによ
り、半導体基板３上の任意の位置のガス成分、即ちエッ
チングガスと反応生成物の比率、は等しくなり、且つ被
エッチング体３の上を流れるガスの速度も一様になり、
第１の実施例と同等の効果を得ることが出来る。FIG. 3 is a vertical sectional view of the apparatus of the second embodiment, and FIG. 4 is a sectional view of the apparatus of FIG. 3 taken along the line AA 'and seen from above. The general structure is the same as that of the first embodiment, but the rotary plate 14 having the opening 15 is used as the lower electrode 2.
It is different in that it is installed in contact with the suction port of the exhaust pipe 5 on the bottom surface of the side part. The opening 15 is shaped to face at least one of the many gas exhaust pipes 5 regardless of the rotation angle. As a result, the etching gas evenly fed from the upper electrode 1 flows toward the opening 15 of the rotary plate 14. Therefore, by rotating the rotating plate 14 at the above-mentioned specific speed, the gas components at arbitrary positions on the semiconductor substrate 3, that is, the ratios of the etching gas and the reaction products, become equal, and on the object to be etched 3. The velocity of the gas flowing through the
It is possible to obtain the same effect as that of the first embodiment.
【００１２】図５は前記第１の実施例で得られたコンタ
クト形状を示す図である。半導体基板の中央部（左）と
周辺部（右）では形状差が生じていない事が分かる。FIG. 5 is a view showing the contact shape obtained in the first embodiment. It can be seen that there is no difference in shape between the central part (left) and the peripheral part (right) of the semiconductor substrate.
【００１３】[0013]
【発明の効果】以上説明したように本発明は、上部電極
の上方または底部の周辺部に特定の開口部を有する回転
板を具備させる事により、被エッチング体である半導体
基板の上のガスの成分を均一化することができ、またガ
スの流速を一様にすることが可能となり、基板上のエッ
チング形状を均一化せしめるという効果を有する。As described above, according to the present invention, by providing a rotating plate having a specific opening above or around the bottom of the upper electrode, the gas on the semiconductor substrate to be etched can be protected. The components can be made uniform, and the gas flow rate can be made uniform, which has the effect of making the etching shape on the substrate uniform.
【図１】本発明の第１の実施例の縦断面図。FIG. 1 is a vertical sectional view of a first embodiment of the present invention.
【図２】本発明の第１の実施例を上部を除去して上方か
ら見た断面図。FIG. 2 is a cross-sectional view of the first embodiment of the present invention seen from above with the upper portion removed.
【図３】本発明の第２の実施例の縦断面図。FIG. 3 is a vertical sectional view of a second embodiment of the present invention.
【図４】本発明の第２の実施例をＡ−Ａ′で切断して上
方から見た断面図。FIG. 4 is a cross-sectional view of the second embodiment of the present invention taken along AA ′ and seen from above.
【図５】本発明によって得られるコンタクトの形状を示
す図。FIG. 5 is a diagram showing a shape of a contact obtained by the present invention.
【図６】従来技術によって得られるコンタクトの形状を
示す図。FIG. 6 is a view showing a shape of a contact obtained by a conventional technique.
【図７】従来技術による装置の一例の断面図。FIG. 7 is a cross-sectional view of an example of a conventional device.
１ 上部電極 １ａ ガス透過孔 ２ 下部電極 ３ 半導体基板 ４ ガス導入管 ５ ガス排気管 ６ エッチング室 ７ ガスの流れ ８ 回転板 ９ 開口部 １０ 内部磁石 １１ 外部磁石 １４ 回転板 １５ 開口部 1 Upper Electrode 1a Gas Permeation Hole 2 Lower Electrode 3 Semiconductor Substrate 4 Gas Inlet Pipe 5 Gas Exhaust Pipe 6 Etching Chamber 7 Gas Flow 8 Rotating Plate 9 Opening 10 Inner Magnet 11 External Magnet 14 Rotating Plate 15 Opening
Claims (2)
少なくとも中心部以外の部分にほぼ均等にガス透過孔を
設けた上部電極と、該上部電極の上方に設けられたガス
導入管と、底板の前記下方電極の周辺にほぼ均等の間隔
に設けられた複数のガス排出管とを含む平行平板型ＲＩ
Ｅ装置において、 前記上方電極に近接して、回転可能であって、いずれの
回転位置においても前記上方電極に設けられた多数のガ
ス通過孔の内の限られた一部に対向する開口部を有する
回転板と、該回転板を回転させる駆動手段とを備えたこ
とを特徴とするドライエッチング装置。1. A lower electrode for holding an object to be etched,
An upper electrode provided with gas permeation holes substantially at least in a portion other than the central portion, a gas introduction pipe provided above the upper electrode, and provided at substantially equal intervals around the lower electrode of the bottom plate. Parallel plate type RI including a plurality of gas discharge pipes
In the E apparatus, an opening that is rotatable in the vicinity of the upper electrode and that opposes a limited part of a large number of gas passage holes provided in the upper electrode at any rotation position is provided. A dry etching apparatus comprising: a rotating plate having the rotating plate; and driving means for rotating the rotating plate.
ほぼ均等にガス通過孔を多数設けた上部電極と、該上部
電極の上方に設けられたガス導入管と、底板の前記下方
電極の周辺にほぼ均等の間隔に設けられた複数のガス排
出管とを有する平行平板型ＲＩＥ装置において、 前記底板に近接して、回転可能であって、いずれの回転
位置においても前記底板に設けられたガス排出管のの内
の少なくとも１つに対向する開口部を有する環状の回転
板と、該回転板を回転させる駆動手段とを備えたことを
特徴とするドライエッチング装置。2. A lower electrode for holding an object to be etched,
An upper electrode provided with a large number of gas passage holes substantially evenly, a gas introduction pipe provided above the upper electrode, and a plurality of gas discharge pipes provided at substantially even intervals around the lower electrode of the bottom plate. In the parallel-plate type RIE apparatus having: a bottom plate, which is rotatable and has an opening facing at least one of the gas discharge pipes provided at the bottom plate at any rotation position. A dry etching apparatus comprising: an annular rotating plate having the same; and a drive unit for rotating the rotating plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29429292A JPH06151368A (en) | 1992-11-02 | 1992-11-02 | Dry etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29429292A JPH06151368A (en) | 1992-11-02 | 1992-11-02 | Dry etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06151368A true JPH06151368A (en) | 1994-05-31 |
Family
ID=17805814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29429292A Pending JPH06151368A (en) | 1992-11-02 | 1992-11-02 | Dry etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06151368A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6599367B1 (en) * | 1998-03-06 | 2003-07-29 | Tokyo Electron Limited | Vacuum processing apparatus |
-
1992
- 1992-11-02 JP JP29429292A patent/JPH06151368A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6599367B1 (en) * | 1998-03-06 | 2003-07-29 | Tokyo Electron Limited | Vacuum processing apparatus |
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