JPH06151124A - Manufacture of thin-film resistor - Google Patents
Manufacture of thin-film resistorInfo
- Publication number
- JPH06151124A JPH06151124A JP4300816A JP30081692A JPH06151124A JP H06151124 A JPH06151124 A JP H06151124A JP 4300816 A JP4300816 A JP 4300816A JP 30081692 A JP30081692 A JP 30081692A JP H06151124 A JPH06151124 A JP H06151124A
- Authority
- JP
- Japan
- Prior art keywords
- film
- heat treatment
- resistance
- conductor
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、電子部品等に用いられ
る薄膜抵抗体の製造方法に係り、特に、基板上に抵抗膜
と電極が積層された構造の薄膜抵抗体の製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thin film resistor used in electronic parts and the like, and more particularly to a method for manufacturing a thin film resistor having a structure in which a resistive film and electrodes are laminated on a substrate.
【０００２】[0002]
【従来の技術】従来、薄膜抵抗体の製造方法は、基板上
に抵抗膜と導体膜を積層したのち導体膜をパターニング
して電極を形成することにより行われていた。このと
き、抵抗膜はスパッタリング等の真空蒸着を利用して形
成される。このような抵抗膜は一般に熱処理に伴い抵抗
値が変化するため、安定化を目的とした熱処理により、
経時安定性の高い抵抗膜とする必要がある。この安定化
熱処理が必要な抵抗膜を使用する場合には、安定化熱処
理温度でも抵抗膜と反応又は相互拡散しない導体膜を使
用しなければならない。2. Description of the Related Art Conventionally, a method of manufacturing a thin film resistor has been carried out by laminating a resistance film and a conductor film on a substrate and then patterning the conductor film to form electrodes. At this time, the resistance film is formed by utilizing vacuum deposition such as sputtering. Since the resistance value of such a resistance film generally changes with heat treatment, heat treatment for the purpose of stabilizing
It is necessary to make the resistance film highly stable over time. When using a resistance film that requires this stabilizing heat treatment, a conductor film that does not react or interdiffuse with the resistance film even at the stabilizing heat treatment temperature must be used.
【０００３】安定化熱処理温度で抵抗膜と反応又は相互
拡散する導体膜を使用しても、まず、抵抗膜単膜を成膜
して安定化熱処理を行い、ついで電極となる導体膜を積
層し、パターニングする方法を用いればよいと考えられ
るが、その場合は抵抗膜と導体膜間の導通コンタクト抵
抗が問題となる。従って、抵抗膜と導体膜は連続して積
層されるのが望ましく、その場合には、前記のように安
定化熱処理温度でも抵抗膜と反応又は相互拡散しない導
体膜を使用する必要がある。Even if a conductor film which reacts with or interdiffuses with a resistance film at a stabilizing heat treatment temperature is used, first, a resistance film single film is formed and stabilizing heat treatment is performed, and then a conductor film to be an electrode is laminated. It is considered that the method of patterning may be used, but in that case, the conductive contact resistance between the resistance film and the conductor film becomes a problem. Therefore, it is desirable that the resistance film and the conductor film be continuously laminated. In that case, as described above, it is necessary to use a conductor film that does not react with or interdiffuse with the resistance film even at the stabilizing heat treatment temperature.
【０００４】なお、薄膜抵抗体の製造方法に関連するも
のとしては、例えば特開昭６０−１３６３９１号公報等
が挙げられる。As a method related to the method of manufacturing a thin film resistor, there is, for example, JP-A-60-136391.
【０００５】[0005]
【発明が解決しようとする課題】上記従来技術は、安定
化熱処理が必要な抵抗膜を使用する際、安定化熱処理温
度でも抵抗膜と導体膜が反応又は相互拡散しないように
導体膜の材質を選択する必要があり、導体膜に任意の材
質を選択できないという問題を有していた。In the above prior art, when using a resistance film that requires stabilization heat treatment, the material of the conductor film is selected so that the resistance film and the conductor film do not react or interdiffuse even at the stabilization heat treatment temperature. There is a problem in that it is necessary to select the material and it is not possible to select an arbitrary material for the conductor film.
【０００６】本発明の目的は、安定化熱処理が必要な抵
抗膜を使用する際、導体膜に任意の材料を使用できる薄
膜抵抗体の製造方法を提供することにある。An object of the present invention is to provide a method for manufacturing a thin film resistor, which can use an arbitrary material for a conductor film when using a resistance film requiring a stabilizing heat treatment.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
に、本発明の薄膜抵抗体の製造方法は、基板上に、安定
化熱処理を必要とする抵抗膜を形成し、この抵抗膜上に
導体膜を積層し、少なくとも導体膜をパターニングにて
電極を形成し、その後安定化熱処理を行う。In order to achieve the above object, a method of manufacturing a thin film resistor according to the present invention comprises forming a resistive film requiring a stabilizing heat treatment on a substrate, and forming a resistive film on the resistive film. Conductive films are laminated, at least the conductive films are patterned to form electrodes, and then stabilizing heat treatment is performed.
【０００８】基板上に抵抗膜と導体膜を積層したのち、
上記パターニング前に加熱しても抵抗膜と導体膜が反応
又は相互拡散する温度以下であれば差しつかえない。安
定化熱処理の温度は、抵抗膜と導体膜が反応又は相互拡
散する温度以上であることが好ましい。具体的な安定化
熱処理の温度は、抵抗膜と導体膜の材料やそれらの組み
合わせによって異なり、例えば、抵抗膜がＣｒ−ＳｉＯ
2、導体膜がＡｌのとき２５０℃から５００℃の範囲で
あることが好ましい。しかし、これ以外の条件によって
もこの温度の好ましい範囲は異なり、例えば、素子中に
ポリイミド樹脂を含む素子は、あまり高温に保つことは
避けなければならず、上記材料の組み合わせでも２５０
℃から４２０℃の範囲であることが好ましい。After laminating the resistance film and the conductor film on the substrate,
Even if it is heated before the above patterning, there is no problem if it is lower than the temperature at which the resistance film and the conductor film react or mutually diffuse. The temperature of the stabilizing heat treatment is preferably equal to or higher than the temperature at which the resistance film and the conductor film react or interdiffuse. The specific temperature of the stabilizing heat treatment varies depending on the materials of the resistance film and the conductor film and the combination thereof, and for example, the resistance film is made of Cr-SiO.
2. When the conductor film is Al, the temperature is preferably in the range of 250 ° C to 500 ° C. However, the preferable range of this temperature also differs depending on the other conditions, and for example, for an element containing a polyimide resin in the element, it is necessary to avoid keeping the temperature too high.
It is preferably in the range of ℃ to 420 ℃.
【０００９】[0009]
【作用】本発明の薄膜抵抗体の製造方法は、抵抗膜と導
体膜を積層したのち導体膜をパターニングして電極を形
成し、その後に安定化熱処理を行うことで、導体膜に任
意の材料を使用することが可能である。According to the method of manufacturing a thin film resistor of the present invention, a resistance film and a conductor film are laminated, a conductor film is patterned to form an electrode, and then a stabilizing heat treatment is performed, so that the conductor film is made of any material. Can be used.
【００１０】[0010]
【実施例】本発明の一実施例の薄膜抵抗体の製造方法を
図面を用いて説明する。図１（ａ）は本実施例の薄膜抵
抗体の製造方法により製造した薄膜抵抗体の平面図、図
１（ｂ）はその断面図、図２は本実施例に用いられる薄
膜抵抗体の製造方法を示すフロー図である。本実施例
は、例えばセラミック基板上に薄膜配線を有するハイブ
リット基板の製造工程に適用できる。DESCRIPTION OF THE PREFERRED EMBODIMENTS A method of manufacturing a thin film resistor according to an embodiment of the present invention will be described with reference to the drawings. FIG. 1A is a plan view of a thin film resistor manufactured by the method of manufacturing a thin film resistor according to the present embodiment, FIG. 1B is a sectional view thereof, and FIG. 2 is a manufacture of a thin film resistor used in this embodiment. It is a flow figure showing a method. This embodiment can be applied to a manufacturing process of a hybrid substrate having thin film wiring on a ceramic substrate, for example.
【００１１】まず、ガラス、セラミック、プラスチック
等の絶縁材料からなる絶縁体１とタングステン、銅等の
配線材からなる導体２を備えた配線基板上に、例えばス
パッタリングによりＣｒ−ＳｉＯ2からなる抵抗膜３と
Ａｌからなる導体膜４を積層蒸着し、導体膜４をパター
ニングして電極を形成し、さらに導体膜４と抵抗膜３と
をパターニングする。その後に安定化熱処理を行う。こ
のパターニングにより、導体膜のエッチング領域５と導
体膜と抵抗膜のエッチング領域６が形成される。First, on a wiring board provided with an insulator 1 made of an insulating material such as glass, ceramic or plastic and a conductor 2 made of a wiring material such as tungsten or copper, a resistance film made of Cr--SiO 2 is formed by, for example, sputtering. 3 and a conductor film 4 made of Al are laminated and vapor-deposited, the conductor film 4 is patterned to form electrodes, and the conductor film 4 and the resistance film 3 are further patterned. After that, stabilization heat treatment is performed. By this patterning, the etching region 5 of the conductor film and the etching region 6 of the conductor film and the resistance film are formed.
【００１２】ここで従来技術を用いた場合に生ずる問題
の一例を説明する。始めに、Ｃｒ−ＳｉＯ2の抵抗膜３
とＡｌの導体膜４の積層蒸着後に安定化熱処理を行い、
その後に導体膜４と抵抗膜３を湿式エッチングにてパタ
ーニングし、薄膜抵抗とその電極を作成する製造フロー
を検討する。この製造フローにおいて、Ａｌの導体膜４
を湿式エッチングにてパターニングする際、エッチング
領域５の抵抗膜上に抵抗膜と導体膜の反応物が残る。こ
の反応物は、Ｃｒ−ＳｉＯ2からなる抵抗膜よりも低抵
抗なため、完成した薄膜抵抗体は低抵抗となり、また信
頼性上問題が残る。Here, an example of a problem that occurs when the conventional technique is used will be described. First, the resistance film 3 of Cr-SiO 2
Stabilizing heat treatment is performed after the deposition of the conductor film 4 of Al and Al,
After that, the conductive film 4 and the resistance film 3 are patterned by wet etching, and a manufacturing flow for forming a thin film resistor and its electrode will be examined. In this manufacturing flow, the Al conductor film 4
When patterning is performed by wet etching, the reaction product of the resistance film and the conductor film remains on the resistance film in the etching region 5. Since this reaction product has a lower resistance than the resistance film made of Cr—SiO 2 , the completed thin film resistor has a low resistance, and a problem remains in reliability.
【００１３】次に、本発明による実施例について、図２
に基づいて薄膜抵抗体の製造フローを説明する。始め
に、スパッタリングによりＣｒ−ＳｉＯ2からなる抵抗
膜３とＡｌからなる導体膜４を積層蒸着する（ステップ
２０１）。そして、導体膜４と抵抗膜３をパターニング
する（ステップ２０２）。このパターニングは、まず積
層膜上にレジスト膜を形成し、このレジスト膜を所定の
パターンとし、これをマスクにしてＡｌの導体膜４を湿
式エッチングし、エッチング領域５を設けたのちレジス
ト膜を除去する。次に、積層膜上に他のレジスト膜を形
成し、これを所定のパターンとし、これをマスクにして
Ａｌの導体膜４とＣｒ−ＳｉＯ2の抵抗膜３を湿式エッ
チングし、エッチング領域６を設けたのちレジスト膜を
除去する。このレジスト膜形成工程で、レジストの重合
のために１４０℃で１時間の加熱を行う必要があるが、
この温度ではＣｒ−ＳｉＯ2の抵抗膜とＡｌの導体膜の
反応又は相互拡散がほとんど無く、その後のＡｌ湿式エ
ッチングに影響しない。さらにその後、３７０℃で２時
間の安定化熱処理を行う（ステップ２０３）。Next, FIG. 2 shows an embodiment according to the present invention.
The manufacturing flow of the thin film resistor will be described based on FIG. First, the resistance film 3 made of Cr—SiO 2 and the conductor film 4 made of Al are stacked and deposited by sputtering (step 201). Then, the conductor film 4 and the resistance film 3 are patterned (step 202). In this patterning, first, a resist film is formed on the laminated film, the resist film is formed into a predetermined pattern, the Al conductor film 4 is wet-etched using the resist film as a mask, the etching region 5 is provided, and then the resist film is removed. To do. Next, another resist film is formed on the laminated film, and this is used as a predetermined pattern. Using this as a mask, the conductor film 4 of Al and the resistance film 3 of Cr—SiO 2 are wet-etched to form an etching region 6 After providing, the resist film is removed. In this resist film forming step, it is necessary to heat at 140 ° C. for 1 hour to polymerize the resist.
At this temperature, there is almost no reaction or mutual diffusion between the resistance film of Cr—SiO 2 and the conductor film of Al, and it does not affect the subsequent Al wet etching. After that, a stabilizing heat treatment is performed at 370 ° C. for 2 hours (step 203).
【００１４】従って、本実施例による薄膜抵抗体の製造
方法によれば、Ｃｒ−ＳｉＯ2の抵抗膜に導体膜として
Ａｌが使用できる。Therefore, according to the method of manufacturing the thin film resistor of this embodiment, Al can be used as the conductor film for the Cr-SiO 2 resistance film.
【００１５】以上、本発明を実施例に基づき具体的に説
明したが、本発明は前記実施例に限定されるものではな
く、その主旨を逸脱しない範囲で種々変更可能であるこ
とはいうまでもない。例えば、抵抗膜３としてＣｒ−Ｓ
ｉＯ2をスパッタリングにより蒸着した場合について説
明したが、抵抗膜として、ＮｉＣｒ、Ｔａ−ＳｉＯ2、
Ａｕ−ＳｉＯ2、Ｒｕ−ＳｉＯ2等広く適用可能である。
また、導体膜４もＡｌの他に、Ｃｕ、Ｔｉ、Ｗ、Ａｇ、
Ａｕ等広く適用可能である。Although the present invention has been specifically described based on the embodiments, it is needless to say that the present invention is not limited to the embodiments and various modifications can be made without departing from the spirit of the invention. Absent. For example, as the resistance film 3, Cr-S is used.
The case where iO 2 is vapor-deposited by sputtering has been described, but as the resistance film, NiCr, Ta-SiO 2 ,
Au-SiO 2, Ru-SiO 2 or the like can be widely applied.
In addition to Al, the conductor film 4 includes Cu, Ti, W, Ag,
Widely applicable such as Au.
【００１６】[0016]
【発明の効果】以上説明したように、本発明によれば、
安定化熱処理が必要な抵抗膜を使用する際、導体膜に随
意の材料を使用して薄膜抵抗体を製造することができ
た。As described above, according to the present invention,
When using a resistance film that requires stabilizing heat treatment, it is possible to manufacture a thin film resistor by using an optional material for the conductor film.
【図１】本発明の一実施例の薄膜抵抗体の製造方法によ
り製造した薄膜抵抗体の平面図及び断面図である。FIG. 1 is a plan view and a cross-sectional view of a thin film resistor manufactured by a method of manufacturing a thin film resistor according to an embodiment of the present invention.
【図２】本発明の一実施例の薄膜抵抗体の製造方法を示
すフロー図である。FIG. 2 is a flow chart showing a method of manufacturing a thin film resistor according to an embodiment of the present invention.
１…絶縁体 ２…導体 ３…抵抗膜 ４…導体膜 ５、６…エッチング領域 1 ... Insulator 2 ... Conductor 3 ... Resistive film 4 ... Conductive film 5, 6 ... Etching region
Claims (1)
膜を形成し、該抵抗膜上に導体膜を積層し、少なくとも
該導体膜をパターニングにて電極を形成し、その後安定
化熱処理を行うことを特徴とする薄膜抵抗体の製造方
法。1. A resistive film requiring a stabilizing heat treatment is formed on a substrate, a conductor film is laminated on the resistive film, at least the conductor film is patterned to form an electrode, and then a stabilizing heat treatment is performed. A method of manufacturing a thin film resistor, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4300816A JPH06151124A (en) | 1992-11-11 | 1992-11-11 | Manufacture of thin-film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4300816A JPH06151124A (en) | 1992-11-11 | 1992-11-11 | Manufacture of thin-film resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06151124A true JPH06151124A (en) | 1994-05-31 |
Family
ID=17889455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4300816A Pending JPH06151124A (en) | 1992-11-11 | 1992-11-11 | Manufacture of thin-film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06151124A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2003088276A1 (en) * | 2002-04-02 | 2005-08-25 | 東洋鋼鈑株式会社 | Resistance film laminate, resistance film laminate manufacturing method, component using resistance film laminate, and component manufacturing method using resistance film laminate |
| KR20160001972U (en) * | 2014-12-01 | 2016-06-09 | 대우조선해양 주식회사 | Emergency escape window for ship |
-
1992
- 1992-11-11 JP JP4300816A patent/JPH06151124A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2003088276A1 (en) * | 2002-04-02 | 2005-08-25 | 東洋鋼鈑株式会社 | Resistance film laminate, resistance film laminate manufacturing method, component using resistance film laminate, and component manufacturing method using resistance film laminate |
| KR20160001972U (en) * | 2014-12-01 | 2016-06-09 | 대우조선해양 주식회사 | Emergency escape window for ship |
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