JPH06145968A - Thin film forming device - Google Patents
Thin film forming deviceInfo
- Publication number
- JPH06145968A JPH06145968A JP30225692A JP30225692A JPH06145968A JP H06145968 A JPH06145968 A JP H06145968A JP 30225692 A JP30225692 A JP 30225692A JP 30225692 A JP30225692 A JP 30225692A JP H06145968 A JPH06145968 A JP H06145968A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- thin film
- nozzle
- vapor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は蒸着物質のクラスター
とクラスターイオンを利用して基板の表面に薄膜を被着
形成する薄膜形成装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming apparatus for forming a thin film on a surface of a substrate by using clusters of vapor deposition substances and cluster ions.
【０００２】[0002]
【従来の技術】図２は例えば、特公昭54−9592号公報に
開示されたものと同様の従来の薄膜形成装置を示す模式
図である。図において、１は所定の真空度に保持した真
空槽、２は真空槽１の内部に配置した坩堝、３は坩堝２
に充填した蒸着物質、３ａは蒸着物質３の蒸気が噴出し
てできたクラスター（塊状原子集団）、３ｂはクラスタ
ー３ａに電子を当ててイオン化したクラスターイオン、
４は坩堝２に衝突させる熱電子を放出するボンバードフ
ィラメント、５は坩堝２とボンバードフィラメント４を
囲繞して熱を遮蔽する熱シールド板、６はクラスター３
ａに当てる電子を放出するイオン化フィラメント、７は
イオン化フィラメント６から電子を引き出し、加速する
グリッド、８はクラスターイオン３ｂを加速して運動エ
ネルギーを付与する加速電極、10は真空槽１の内部に配
置して蒸着物質３を被着する基板、11は基板10の表面に
被着した蒸着物質３の薄膜、31はボンバードフィラメン
ト４に電力を供給する第一交流電源、32はボンバードフ
ィラメント４に対し坩堝２を正の電位に保つ第一直流電
源、33はイオン化フィラメント６に電力を供給する第二
交流電源、34はイオン化フィラメント６に対してグリッ
ド７を正の電位に保つ第二直流電源、35はグリッド７に
対し加速電極８を負の電位に保つ第三直流電源である。
また、図３は図２の坩堝２とボンバードフィラメント４
の部分を具体化して示す断面図、図４は図３の坩堝２を
示す平面図である。図３と図４において、２ａは蒸着物
質３を容れる坩堝２の胴体部、２ｂは胴体部２ａに嵌め
入れた凹形の蓋体部、２ｃは蓋体部２ｂの凹形の底部に
設けたノズルである。2. Description of the Related Art FIG. 2 is a schematic view showing a conventional thin film forming apparatus similar to that disclosed in Japanese Patent Publication No. 54-9592. In the figure, 1 is a vacuum tank which is maintained at a predetermined vacuum degree, 2 is a crucible arranged inside the vacuum tank 1, and 3 is a crucible 2
3a is a cluster (lumpy atomic group) formed by the vapor of the vapor deposition material 3 ejected, 3b is a cluster ion ionized by applying electrons to the cluster 3a,
4 is a bombard filament that emits thermoelectrons that collide with the crucible 2, 5 is a heat shield plate that surrounds the crucible 2 and the bombard filament 4 to shield heat, and 6 is a cluster 3
An ionizing filament that emits electrons to be applied to a, a grid 7 that extracts and accelerates electrons from the ionizing filament 6, an accelerating electrode that accelerates the cluster ions 3b to give kinetic energy, and 10 is arranged inside the vacuum chamber 1. Then, 11 is a substrate on which the vapor deposition material 3 is deposited, 11 is a thin film of the vapor deposition material 3 deposited on the surface of the substrate 10, 31 is a first AC power source for supplying power to the bombard filament 4, and 32 is a crucible for the bombard filament 4. A first DC power supply for keeping 2 at a positive potential, 33 a second AC power supply for supplying power to the ionizing filament 6, 34 for a second DC power source for keeping the grid 7 at a positive potential with respect to the ionizing filament 6, 35 Is a third DC power supply for keeping the acceleration electrode 8 at a negative potential with respect to the grid 7.
In addition, FIG. 3 shows the crucible 2 and the bombard filament 4 of FIG.
FIG. 4 is a cross-sectional view embodying the portion of FIG. 4 and FIG. 4 is a plan view showing the crucible 2 of FIG. 3 and 4, reference numeral 2a denotes a body portion of the crucible 2 containing the vapor deposition material 3, 2b denotes a concave lid portion fitted in the body portion 2a, and 2c denotes a concave bottom portion of the lid portion 2b. It is a nozzle.
【０００３】従来の薄膜形成装置は以上のように構成さ
れ、真空槽１の内部を所定の真空度に保ちながらボンバ
ードフィラメント４から放出される熱電子を電界で加速
し、坩堝２に衝突させて加熱する。これにより、坩堝２
の内部に充填した蒸着物質３は蒸気になり、ノズル２ｃ
から噴出して断熱膨張により過冷却状態となり、凝集し
てクラスター３ａを形成する。このクラスター３ａにイ
オン化フィラメント６から放出した電子をグリッド７で
加速して当てるとその一部はイオン化されてクラスター
イオン３ｂとなる。このクラスターイオン３ｂをイオン
化されていない中性のクラスター３ａと共にグリッド７
と加速電極８との間の電界で加速して運動エネルギーを
付与し、基板10の表面に射突させて薄膜11を形成する。The conventional thin film forming apparatus is constructed as described above, and while keeping the inside of the vacuum chamber 1 at a predetermined vacuum degree, the thermoelectrons emitted from the bombard filament 4 are accelerated by an electric field and collided with the crucible 2. To heat. As a result, the crucible 2
The vapor deposition material 3 filled in the inside becomes vapor, and the nozzle 2c
It is jetted out of the container and is adiabatically expanded into a supercooled state and aggregates to form clusters 3a. When the electrons emitted from the ionization filament 6 are accelerated and applied to the cluster 3a by the grid 7, a part thereof is ionized and becomes the cluster ion 3b. This cluster ion 3b is added to the grid 7 together with the non-ionized neutral cluster 3a.
The thin film 11 is formed by accelerating with an electric field between the accelerating electrode 8 and the accelerating electrode 8 to give kinetic energy and bombarding the surface of the substrate 10.
【０００４】[0004]
【発明が解決しようとする課題】従来の薄膜形成装置は
以上のように構成され、ボンバードフィラメント4 から
放出する熱電子を電界で加速し、坩堝２の胴体部２ａの
外周に衝突させて加熱するので、蓋体部２ｂの温度分布
は周辺部に比べて中心部で低くなり、そのため胴体部２
ａの中で蒸気になった蒸着物質が蓋体部２ｂの中央のノ
ズル２ｃに付着して液滴に成長し、ノズル２ｃが詰った
り、蒸気の噴出力で吹き飛ばされてスピッティングを生
じ、基板10の表面に均一な薄膜を形成しないと云う技術
的課題があった。The conventional thin film forming apparatus is constructed as described above, and thermoelectrons emitted from the bombarded filament 4 are accelerated by an electric field to collide with the outer periphery of the body portion 2a of the crucible 2 to heat it. Therefore, the temperature distribution of the lid portion 2b becomes lower in the central portion than in the peripheral portion, so that the body portion 2b
The vapor deposition material that has become vapor in a adheres to the nozzle 2c at the center of the lid portion 2b and grows into droplets, and the nozzle 2c is clogged or blown off by the jetting force of vapor to cause spitting, There was a technical problem of not forming a uniform thin film on the surface of 10.
【０００５】この発明は上記のような課題を解決するた
めになされたもので、蒸着物質の蒸気がノズルで液滴と
なって詰ったり、蒸気の噴出力で吹き飛ばされてスピッ
テングを生じることがなく、基板の表面に均一な薄膜を
形成することができる薄膜形成装置を提供することを目
的とする。The present invention has been made in order to solve the above problems, and the vapor of the vapor deposition material is not clogged as droplets at the nozzle, and is not blown away by the jetting force of the vapor to cause spitting. An object of the present invention is to provide a thin film forming apparatus capable of forming a uniform thin film on the surface of a substrate.
【０００６】[0006]
【課題を解決するための手段】この発明に係る薄膜形成
装置は所定の真空度を保つ真空槽の内部に蒸着物質を充
填した坩堝と基板とを配置し、坩堝に熱電子を衝突させ
て加熱、蒸着物質の蒸気を坩堝のノズルから噴出させ、
断熱膨張により過冷却状態にしてクラスターを形成し、
このクラスターの一部をイオン化したクラスターイオン
と共に基板の表面に射突させて薄膜を形成するものにお
いて、蒸着物質を容れる胴体部と凹形の底部にノズルを
設けた蓋体部とで坩堝を構成し、胴体部と蓋体部とに直
接熱電子を衝突させて加熱するものである。In the thin film forming apparatus according to the present invention, a crucible filled with a vapor deposition material and a substrate are placed inside a vacuum chamber which maintains a predetermined degree of vacuum, and a thermoelectron is made to collide with the crucible to heat the crucible. , Vapor of vapor deposition material is ejected from the crucible nozzle,
By adiabatic expansion to a supercooled state to form clusters,
In the case of forming a thin film by projecting a part of this cluster on the surface of the substrate together with ionized cluster ions, the crucible is composed of the body part containing the deposition material and the lid part with the nozzle at the bottom of the concave shape. Then, the thermoelectrons directly collide with the body and the lid to heat them.
【０００７】[0007]
【作用】この発明においては、坩堝が蒸着物質を容れる
胴体部と凹形の底部にノズルを設けた蓋体部とで構成さ
れ、胴体部と蓋体部とに直接熱電子を衝突させて加熱す
るから、蓋体部の温度分布は周辺部でも中心部でもほぼ
均一になる。According to the present invention, the crucible is composed of the body portion containing the vapor deposition substance and the lid portion having the concave bottom provided with the nozzle, and the thermoelectric electrons are directly collided with the body portion and the lid portion to heat the crucible. Therefore, the temperature distribution in the lid portion is almost uniform both in the peripheral portion and the central portion.
【０００８】[0008]
実施例１．この発明の一実施例を図について説明する。
図１は図２の坩堝２とボンバードフィラメント４の部分
を具体化したこの発明の一実施例を示す断面図である。
図において、３、４はすでに従来の技術で説明したもの
と同じである。22は真空槽１の内部に配置した坩堝、22
ａは蒸着物質３を容れる坩堝22の胴体部、22ｂは胴体部
22ａに一部を嵌め入れた凹形の蓋体部、22ｃは蓋体部22
ｂの凹形の底部に設けたノズルである。Example 1. An embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a sectional view showing an embodiment of the present invention in which the crucible 2 and the bombarded filament 4 of FIG. 2 are embodied.
In the figure, 3 and 4 are the same as those already described in the conventional technique. 22 is a crucible placed inside the vacuum chamber 1, 22
a is a body of the crucible 22 containing the vapor deposition material 3, and 22b is a body.
22a is a concave lid part partially fitted in 22a, and 22c is a lid part 22
It is a nozzle provided on the concave bottom of b.
【０００９】この実施例は以上のように構成され、真空
槽１の内部を所定の真空度に保ちながらボンバードフィ
ラメント４から放出される熱電子をボンバードフィラメ
ント４と坩堝22との間に生じる電界で加速し、胴体部22
ａと蓋体部22ｂとに直接衝突させて加熱する。これによ
り、胴体部22ａに容れた蒸着物質３は蒸気になり、蓋体
部22ｂに設けたノズル22ｃから噴出するが、蓋体部22ｂ
は熱電子が直接、衝突して加熱されるので、熱の伝導が
よく、温度分布は周辺部でも中心部でもほぼ均一になっ
て蓋体部22ｂの中央のノズル22ｃに蒸気が付着して液滴
になることはなく、したがってノズル22ｃが詰ったり、
蒸気の噴出力で吹き飛ばされてスピッテングを生じるこ
とはない。以後の作用については従来の技術で説明した
ものと同じであるので、説明を省略する。This embodiment is constructed as described above, and the thermoelectrons emitted from the bombarded filament 4 are generated by the electric field generated between the bombarded filament 4 and the crucible 22 while keeping the inside of the vacuum chamber 1 at a predetermined vacuum degree. Accelerate and fuselage 22
A is directly collided with the lid portion 22b and heated. As a result, the vapor deposition material 3 contained in the body portion 22a becomes vapor and spouts from the nozzle 22c provided in the lid portion 22b.
Since the thermoelectrons directly collide and are heated, the heat conduction is good, and the temperature distribution is almost uniform both in the peripheral portion and in the central portion, and the vapor adheres to the nozzle 22c in the center of the lid portion 22b and the liquid It will not be a drop, so the nozzle 22c will be clogged,
It is not blown away by the jet force of steam and spitting does not occur. Subsequent operations are the same as those described in the related art, and thus the description thereof will be omitted.
【００１０】[0010]
【発明の効果】以上のようにこの発明によれば、蒸着物
質を容れる胴体部と凹形の底部にノズルを設けた蓋体部
とで坩堝を構成し、胴体部と蓋体部とに直接熱電子を衝
突させて加熱するので、蓋体部の温度分布が周辺部でも
中心部でもほぼ均一になり、蒸着物質の蒸気がノズルで
液滴となって詰ったり、蒸気の噴出力で吹き飛ばされて
スピッテングを生じることがなく、基板の表面に均一な
薄膜が形成できる効果がある。As described above, according to the present invention, the crucible is constituted by the body portion containing the vapor deposition substance and the lid portion having the concave bottom portion provided with the nozzle, and the crucible is directly attached to the body portion and the lid portion. Since the thermoelectrons collide with each other to heat, the temperature distribution of the lid part is almost uniform both in the peripheral part and in the center part, and the vapor of the vapor deposition material is clogged as droplets in the nozzle or blown off by the jetting force of the vapor. There is an effect that a uniform thin film can be formed on the surface of the substrate without causing spitting.
【図１】この発明の一実施例を示す断面図である。FIG. 1 is a sectional view showing an embodiment of the present invention.
【図２】従来の薄膜形成装置を示す模式図である。FIG. 2 is a schematic view showing a conventional thin film forming apparatus.
【図３】図２の坩堝とボンバードフィラメントの部分を
具体化して示す断面図である。FIG. 3 is a cross-sectional view showing a specific portion of a crucible and a bombard filament of FIG.
【図４】図３の坩堝のを示す平面図である。FIG. 4 is a plan view showing the crucible of FIG.
１ 真空槽 ２ 坩堝 ３ 蒸着物質 ３ａ クラスター ３ｂ クラスターイオン ４ ボンバードフィラメント ６ イオン化フィラメント ７ グリッド ８ 加速電極 10 基板 11 薄膜 22 坩堝 22ａ 胴体部 22ｂ 蓋体部 22ｃ ノズル 1 Vacuum Tank 2 Crucible 3 Deposition Material 3a Cluster 3b Cluster Ion 4 Bombard Filament 6 Ionizing Filament 7 Grid 8 Accelerating Electrode 10 Substrate 11 Thin Film 22 Crucible 22a Body 22b Lid 22c Nozzle
Claims (1)
物質を充填した坩堝と基板とを配置し、上記坩堝に熱電
子を衝突させて加熱、上記蒸着物質の蒸気を上記坩堝の
ノズルから噴出させ、断熱膨張により過冷却状態にして
クラスターを形成し、このクラスターの一部をイオン化
したクラスターイオンと共に上記基板の表面に射突させ
て薄膜を形成する薄膜形成装置において、上記蒸着物質
を容れる胴体部と凹形の底部にノズルを設けた蓋体部と
で上記坩堝を構成し、上記胴体部と上記蓋体部とに直接
熱電子を衝突させて加熱することを特徴とする薄膜形成
装置。1. A crucible filled with a vapor deposition material and a substrate are placed inside a vacuum chamber that maintains a predetermined degree of vacuum, and the crucible is heated by colliding thermoelectrons with the crucible and heating the vapor of the vapor deposition material into a nozzle of the crucible. In a thin film forming apparatus for forming a thin film by ejecting the cluster from a supercooled state by adiabatic expansion, and forming a thin film by bombarding a part of this cluster with the ionized cluster ions on the surface of the substrate. A thin film formation characterized in that the crucible is composed of a body part to be accommodated and a lid part provided with a nozzle at the bottom of a concave shape, and the body part and the lid part are directly bombarded with thermoelectrons for heating. apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30225692A JPH06145968A (en) | 1992-11-12 | 1992-11-12 | Thin film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30225692A JPH06145968A (en) | 1992-11-12 | 1992-11-12 | Thin film forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06145968A true JPH06145968A (en) | 1994-05-27 |
Family
ID=17906828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30225692A Pending JPH06145968A (en) | 1992-11-12 | 1992-11-12 | Thin film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06145968A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100898072B1 (en) * | 2003-04-09 | 2009-05-18 | 삼성모바일디스플레이주식회사 | Heating crucible of organic thin film forming apparatus |
| CN102168248A (en) * | 2010-02-26 | 2011-08-31 | 绿阳光电股份有限公司 | Evaporation source device |
| JP2013057096A (en) * | 2011-09-07 | 2013-03-28 | Sumitomo Bakelite Co Ltd | Film forming method and method for producing test piece |
-
1992
- 1992-11-12 JP JP30225692A patent/JPH06145968A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100898072B1 (en) * | 2003-04-09 | 2009-05-18 | 삼성모바일디스플레이주식회사 | Heating crucible of organic thin film forming apparatus |
| CN102168248A (en) * | 2010-02-26 | 2011-08-31 | 绿阳光电股份有限公司 | Evaporation source device |
| JP2013057096A (en) * | 2011-09-07 | 2013-03-28 | Sumitomo Bakelite Co Ltd | Film forming method and method for producing test piece |
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