JPH06123632A - Dynamic quantity sensor - Google Patents
Dynamic quantity sensorInfo
- Publication number
- JPH06123632A JPH06123632A JP4274530A JP27453092A JPH06123632A JP H06123632 A JPH06123632 A JP H06123632A JP 4274530 A JP4274530 A JP 4274530A JP 27453092 A JP27453092 A JP 27453092A JP H06123632 A JPH06123632 A JP H06123632A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- electrodes
- angular velocity
- substrate
- beams
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、角速度や加速度等の
力学量を検出するための力学量センサに関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mechanical quantity sensor for detecting a mechanical quantity such as angular velocity and acceleration.
【０００２】[0002]
【従来の技術】従来、コリオリの力を利用してヨーレイ
トを検出するものとしては、圧電素子を使用した音叉型
・音片型がある。2. Description of the Related Art Conventionally, there are a tuning fork type and a tuning piece type using a piezoelectric element as a means for detecting the yaw rate by utilizing the Coriolis force.
【０００３】[0003]
【発明が解決しようとする課題】ところが、複雑な形状
の機械加工及び圧電素子の貼り付けが必要であり、小型
化・低コスト化・高精度化が難しいという問題点があ
る。However, there is a problem in that it is necessary to machine a complicated shape and attach a piezoelectric element, and it is difficult to reduce the size, cost, and accuracy.
【０００４】そこで、この発明は、新規な構造の力学量
センサを提供することにある。Therefore, the present invention is to provide a mechanical sensor having a novel structure.
【０００５】[0005]
【課題を解決するための手段】この発明は、錘をＬ字型
の梁で支持して、同Ｌ字型の梁で形成される面を錘の可
動面とし、力学量の作用に伴う錘の動きを検出するよう
にした力学量センサをその要旨とするものである。According to the present invention, a weight is supported by an L-shaped beam, and a surface formed by the L-shaped beam is used as a movable surface of the weight. The gist of the present invention is a mechanical quantity sensor that detects the movement of the.
【０００６】[0006]
【作用】Ｌ字型の梁が変形することにより錘が可動状態
となっている。そして、力学量の作用に伴う錘の動きが
検出されて力学量が検出される。[Function] The weight is movable due to the deformation of the L-shaped beam. Then, the movement of the weight due to the action of the mechanical quantity is detected to detect the mechanical quantity.
【０００７】[0007]
【実施例】以下、この発明を角速度センサに具体化した
一実施例を図面に従って説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the present invention is embodied in an angular velocity sensor will be described below with reference to the drawings.
【０００８】図１には、本実施例の角速度センサの平面
図を示し、図２は図１のＡ矢視図である。基板１は単結
晶シリコン基板（又はセラミック，ガラス）よりなり、
数ｍｍ角、厚さ５００μｍ程度のものである。FIG. 1 shows a plan view of the angular velocity sensor of this embodiment, and FIG. 2 is a view taken in the direction of arrow A in FIG. The substrate 1 is made of a single crystal silicon substrate (or ceramic or glass),
It has a size of several mm square and a thickness of about 500 μm.
【０００９】基板１の上面には４つの固定部（アンカー
部）２，３，４，５が立設され、この固定部２，３，
４，５からＬ字型の梁６，７，８，９が延設されてい
る。それぞれのＬ字型の梁６，７，８，９の他端には導
電性を有する方形の錘１０が形成されている。この梁
６，７，８，９及び錘１０は、基板１の表面と平行な面
に延設配置されている。Four fixing portions (anchor portions) 2, 3, 4, 5 are erected on the upper surface of the substrate 1, and the fixing portions 2, 3,
L-shaped beams 6, 7, 8 and 9 are extended from 4,5. A square weight 10 having conductivity is formed at the other end of each L-shaped beam 6, 7, 8, 9. The beams 6, 7, 8, 9 and the weight 10 are extendedly arranged in a plane parallel to the surface of the substrate 1.
【００１０】図１での錘１０の左側面には５つの棒状の
電極１１が図１において左右方向（Ｘ軸）に延設されて
いる。同様に、図１での錘１０の右側面には５つの棒状
の電極１２が図１において左右方向（Ｘ軸）に延設され
ている。さらに、図１での錘１０の上側面には５つの棒
状の電極１３が図１において上下方向（Ｙ軸）に延設さ
れている。同様に、図１での錘１０の下側面には５つの
棒状の電極１４が図１において上下方向（Ｙ軸）に延設
されている。On the left side surface of the weight 10 in FIG. 1, five rod-shaped electrodes 11 are extended in the horizontal direction (X axis) in FIG. Similarly, on the right side surface of the weight 10 in FIG. 1, five rod-shaped electrodes 12 are extended in the left-right direction (X axis) in FIG. Further, five rod-shaped electrodes 13 are provided on the upper side surface of the weight 10 in FIG. 1 so as to extend in the vertical direction (Y axis) in FIG. Similarly, on the lower surface of the weight 10 in FIG. 1, five rod-shaped electrodes 14 are extended in the vertical direction (Y axis) in FIG.
【００１１】一方、各電極１１間には２本ずつの棒状の
電極１５が配置され、その一端が基板１上面に固定され
ており、電極１１と電極１５とにより対向電極が構成さ
れている。又、各電極１２間には２本ずつの棒状の電極
１６が配置され、その一端が基板１上面に固定されてお
り、電極１２と電極１６とにより対向電極が構成されて
いる。同様に、各電極１３間には２本ずつの棒状の電極
１７が配置され、その一端が基板１上面に固定されてお
り、電極１３と電極１７とにより対向電極が構成されて
いる。又、各電極１４間には２本ずつの棒状の電極１８
が配置され、その一端が基板１上面に固定されており、
電極１４と電極１８とにより対向電極が構成されてい
る。このように、固定電極１５〜１８と可動電極１１〜
１４との間の空隙が電極ギャップとなる。On the other hand, two rod-shaped electrodes 15 are arranged between each electrode 11, one end of which is fixed to the upper surface of the substrate 1, and the electrodes 11 and 15 constitute a counter electrode. Further, two rod-shaped electrodes 16 are arranged between each electrode 12, one end of which is fixed to the upper surface of the substrate 1, and the electrodes 12 and 16 constitute a counter electrode. Similarly, two rod-shaped electrodes 17 are arranged between each electrode 13, one end of which is fixed to the upper surface of the substrate 1, and the electrodes 13 and 17 form a counter electrode. Two rod-shaped electrodes 18 are provided between each electrode 14.
Is arranged, and one end thereof is fixed to the upper surface of the substrate 1,
The electrode 14 and the electrode 18 form a counter electrode. In this way, the fixed electrodes 15 to 18 and the movable electrodes 11 to
The gap between the electrode 14 and the electrode 14 serves as an electrode gap.
【００１２】ここで、図２に示すように、梁６，７，
８，９と、電極１１〜１４を含む錘１０と、電極１５〜
１８とは、基板１の上面との間に１〜２μｍのギャップ
（空間）が形成されている。つまり、固定部（アンカー
部）２，３，４，５により梁６〜９及び錘１０が浮いた
状態で支持されている。又、この固定部（アンカー部）
２，３，４，５が可動電極取り出し端子となる。Here, as shown in FIG. 2, the beams 6, 7,
8, 9 and weight 10 including electrodes 11 to 14, and electrodes 15 to
A gap (space) of 1 to 2 μm is formed between the reference numeral 18 and the upper surface of the substrate 1. That is, the beams 6 to 9 and the weight 10 are supported in a floating state by the fixed portions (anchor portions) 2, 3, 4, and 5. Also, this fixed part (anchor part)
2, 3, 4, and 5 are movable electrode lead terminals.
【００１３】又、固定部２，３，４，５、梁６〜９、電
極１１〜１４を含む錘１０、及び電極１５〜１８は、後
述するように、犠牲層エッチングを用いた基板１の表面
マイクロマシニング技術によって作成される。Further, the fixing portions 2, 3, 4, 5, the beams 6 to 9, the weight 10 including the electrodes 11 to 14, and the electrodes 15 to 18 are formed on the substrate 1 using the sacrificial layer etching, as will be described later. Created by surface micromachining technology.
【００１４】尚、錘１０は、直方体（１００μｍ角、厚
さ２μｍ程度）であり、Ｘ軸（励振方向軸）とＹ軸（コ
リオリ力による振動軸）に関して対称となっている。
又、Ｌ字型の梁６，７，８，９は、厚さ２μｍ，幅１μ
ｍ，長さ１００μｍ程度であり、厚さより幅を小さくし
て錘１０が基板表面方向（水平方向）に動きやすく、基
板１の深さ方向（垂直方向）に動きにくくなっている。
さらに、電極１１〜１８の形状は厚さ２μｍ，幅１μ
ｍ，長さ１００μｍ程度である。The weight 10 is a rectangular parallelepiped (100 μm square, thickness about 2 μm), and is symmetrical with respect to the X axis (excitation direction axis) and the Y axis (vibration axis by Coriolis force).
The L-shaped beams 6, 7, 8 and 9 have a thickness of 2 μm and a width of 1 μm.
Since the weight 10 is about m, the length is about 100 μm, and the width is smaller than the thickness, the weight 10 is easy to move in the substrate surface direction (horizontal direction) and is hard to move in the depth direction (vertical direction) of the substrate 1.
Furthermore, the electrodes 11 to 18 have a thickness of 2 μm and a width of 1 μm.
m and the length is about 100 μm.
【００１５】次に、角速度センサの製造工程を図３，
４，５，６，７を用いて説明する。まず、図３に示すよ
うに、単結晶シリコン基板１９の表面にプラズマＣＶＤ
又は熱ＣＶＤによりＳｉＮ（窒化シリコン）膜２０を１
μｍ程度の厚さで形成する。そして、固定部２，３，
４，５（可動電極取り出し端子）及び固定電極１５，１
６，１７，１８をシリコン基板内の信号処理回路（図で
は省略してある）と配線する拡散リード２１を、イオン
注入法または熱拡散法にて形成する。その表面に犠牲層
であるＳｉＯ2 膜（酸化シリコン膜）２２を熱ＣＶＤに
より約１μｍの厚さで形成する。Next, the manufacturing process of the angular velocity sensor is shown in FIG.
This will be described using 4, 5, 6, and 7. First, as shown in FIG. 3, plasma CVD is performed on the surface of the single crystal silicon substrate 19.
Alternatively, the SiN (silicon nitride) film 20 is formed by thermal CVD.
It is formed with a thickness of about μm. And the fixed parts 2, 3,
4, 5 (movable electrode take-out terminals) and fixed electrodes 15, 1
Diffusion leads 21 for wiring 6, 17, and 18 to a signal processing circuit (not shown in the figure) in the silicon substrate are formed by an ion implantation method or a thermal diffusion method. A SiO 2 film (silicon oxide film) 22 as a sacrificial layer is formed on the surface by thermal CVD to a thickness of about 1 μm.
【００１６】引き続き、図４に示すように、レジストを
マスクとしてＲＩＥによるドライエッチング法により固
定部（アンカー部）２，３，４，５及び固定電極１５〜
１８の取付部（根元部）となる領域のＳｉＯ2 膜２２と
ＳｉＮ膜２０に対し開孔部２３を形成する（コンタクト
ホールの開孔工程）。Subsequently, as shown in FIG. 4, fixed portions (anchor portions) 2, 3, 4, 5 and fixed electrodes 15 to 15 are formed by dry etching by RIE using a resist as a mask.
An opening 23 is formed in the SiO 2 film 22 and the SiN film 20 in a region that will be the attachment portion (root portion) of 18 (contact hole opening step).
【００１７】さらに、図５に示すように、開孔部２３内
を含むＳｉＯ2 膜２２上に、熱ＣＶＤによりポリシリコ
ン膜２４を約２μｍ形成する。尚、ポリシリコン膜２４
の代わりに、真空蒸着法によるアモルファスシリコンを
用いてもよい。Further, as shown in FIG. 5, a polysilicon film 24 of about 2 μm is formed on the SiO 2 film 22 including the inside of the opening 23 by thermal CVD. The polysilicon film 24
Instead of amorphous silicon, amorphous silicon formed by vacuum deposition may be used.
【００１８】そして、図６に示すように、レジストをマ
スクとしてＲＩＥによるドライエッチング法で梁６〜
９、電極１５〜１８、及び電極１１〜１４を含む錘１０
の形状となるようにポリシリコン膜２４をエッチングす
る。Then, as shown in FIG. 6, the beams 6 to 6 are formed by dry etching by RIE using the resist as a mask.
9, a weight 10 including electrodes 15 to 18 and electrodes 11 to 14
The polysilicon film 24 is etched so as to have the shape described above.
【００１９】さらに、図７に示すように、希フッ酸（又
はバッファドフッ酸）にディップしてＳｉＯ2 膜２２
（犠牲層）をエッチング除去する。このとき、エッチン
グ液が錘１０の下に入り込むことによって錘１０、梁６
〜９、電極１１〜１４が基板１９の上面から離間した状
態となる。Further, as shown in FIG. 7, the SiO 2 film 22 is dipped in dilute hydrofluoric acid (or buffered hydrofluoric acid).
The (sacrificial layer) is removed by etching. At this time, the etching liquid enters under the weight 10 and the weight 10 and the beam 6
9 and the electrodes 11 to 14 are separated from the upper surface of the substrate 19.
【００２０】このように製造された角速度センサにおい
ては、次のような動作をする。図１の対向電極１３，１
７及び１４，１８は、励振用電極（コンデンサ）であ
り、同電極に交流電圧を印加することにより、静電吸引
力によって錘１０がＸ軸方向に振動（励振）する。この
とき、Ｌ字型の梁６，７，８，９におけるＹ軸に平行な
直線部（図１での梁６では６ａで示す部分）が撓むこと
によりＸ軸に振動するものである。The angular velocity sensor manufactured as described above operates as follows. Counter electrodes 13, 1 of FIG.
Reference numerals 7 and 14 and 18 are excitation electrodes (capacitors), and by applying an AC voltage to the electrodes, the weight 10 vibrates (excites) in the X-axis direction by electrostatic attraction. At this time, the straight line portion of the L-shaped beams 6, 7, 8, 9 parallel to the Y axis (the portion 6a of the beam 6 in FIG. 1 is indicated by 6a) bends and vibrates in the X axis.
【００２１】対向電極１１，１５及び１２，１６はコリ
オリ力検出用電極（コンデンサ）であり、図１において
紙面に直交する軸（Ｚ軸）の回りに角速度Ωが発生する
と、錘１０はＹ軸方向にＦc ＝２ｍｖΩのコリオリ力を
受ける。ここで、ｍは錘１０の質量、ｖは錘１０の速度
である。そして、このコリオリ力は、励振印加電圧と同
じ周期をもつこととなり、錘１０はＹ軸方向にもＸ軸方
向と同じ周期で振動する。このとき、Ｌ字型の梁６，
７，８，９におけるＸ軸に平行な直線部（図１での梁６
では６ｂで示す部分）が撓むことによりＹ軸に振動する
ものである。The counter electrodes 11, 15 and 12, 16 are Coriolis force detecting electrodes (capacitors), and when an angular velocity Ω is generated around an axis (Z axis) orthogonal to the paper surface in FIG. In the direction, it receives Coriolis force of Fc = 2mvΩ. Here, m is the mass of the weight 10 and v is the velocity of the weight 10. Then, this Coriolis force has the same cycle as the excitation applied voltage, and the weight 10 vibrates in the Y-axis direction as well as in the X-axis direction. At this time, the L-shaped beam 6,
A straight line portion parallel to the X axis at 7, 8, and 9 (beam 6 in FIG. 1).
Then, the portion (6b) bends and vibrates in the Y-axis.
【００２２】このようにして、コリオリ力により錘１０
がＹ軸方向に変位し、その変位（振動）が対向電極１
１，１５及び１２，１６により容量変化として測定され
る。この容量変化に基づいて回転角速度Ωが検出され
る。つまり、Ｙ軸方向の振幅はコリオリ力２ｍｖΩに比
例し、ｍ及びｖは既知であるのでＹ軸方向の振幅より回
転角速度Ωを求めることができる。In this way, the weight 10 is generated by the Coriolis force.
Is displaced in the Y-axis direction, and the displacement (vibration) is caused by the counter electrode 1
1, 15 and 12, 16 are measured as capacitance change. The rotational angular velocity Ω is detected based on this capacitance change. That is, the amplitude in the Y-axis direction is proportional to the Coriolis force of 2 mvΩ, and since m and v are known, the rotational angular velocity Ω can be obtained from the amplitude in the Y-axis direction.
【００２３】このように本実施例では、錘１０をＬ字型
の梁６，７，８，９で支持して、同Ｌ字型の梁６，７，
８，９で形成される面を錘１０の可動面とし、回転角速
度Ωの印加に伴う錘１０の動きを検出するようにした。
このように、マイクロ加工が可能な平面状態で２次元的
に変位可能な錘１０を有する梁構造となり、新規な構造
の角速度センサとなる。As described above, in this embodiment, the weight 10 is supported by the L-shaped beams 6, 7, 8, and 9, and the L-shaped beams 6, 7, and 8 are supported.
The surface formed by 8 and 9 is a movable surface of the weight 10, and the movement of the weight 10 due to the application of the rotational angular velocity Ω is detected.
As described above, the beam structure has the weight 10 that can be two-dimensionally displaced in a planar state in which micromachining is possible, and the angular velocity sensor has a novel structure.
【００２４】尚、この発明は上記実施例に限定されるも
のではなく、例えば、上記実施例では対向電極（コンデ
ンサ）の面積をかせぐために櫛歯状としていたが、図
８，９に示すように、基板の厚さ方向で電極面積をかせ
ぐようにしてもよい。The present invention is not limited to the above-described embodiment. For example, in the above-mentioned embodiment, the comb-teeth shape is used to increase the area of the counter electrode (capacitor), but as shown in FIGS. The electrode area may be increased in the thickness direction of the substrate.
【００２５】つまり、基板２５に対し４つのＬ字型の梁
２６，２７，２８，２９が延設され、その梁２６，２
７，２８，２９の他端には錘３０が支持されている。
又、基板２５の表面において直交するＸ，Ｙ軸方向に
は、錘側電極３１，３２，３３，３４及び固定側電極３
５，３６，３７，３８が形成されている。この図８，９
に示すセンサの製造方法を図１０，１１，１２を用いて
説明する。まず、図１０に示す単結晶シリコン基板３９
を用意するとともに、図１１に示す単結晶シリコン基板
４０を用意し、さらに、単結晶シリコン基板４０の主表
面の所定領域に凹部４１を形成する。そして、図１２に
示すように、単結晶シリコン基板４０の主表面と単結晶
シリコン基板３９とを直接接合する。そして、図９に示
すように、ドライエッチングにより単結晶シリコン基板
３９に所定のパターンの開孔部を形成する。That is, four L-shaped beams 26, 27, 28, 29 are extended from the substrate 25, and the beams 26, 2 are formed.
A weight 30 is supported on the other ends of 7, 28 and 29.
The weight-side electrodes 31, 32, 33, 34 and the fixed-side electrode 3 are arranged in the X and Y axis directions orthogonal to each other on the surface of the substrate 25.
5, 36, 37 and 38 are formed. These Figures 8 and 9
A method of manufacturing the sensor shown in will be described with reference to FIGS. First, the single crystal silicon substrate 39 shown in FIG.
11, the single crystal silicon substrate 40 shown in FIG. 11 is prepared, and the recess 41 is formed in a predetermined region of the main surface of the single crystal silicon substrate 40. Then, as shown in FIG. 12, the main surface of single crystal silicon substrate 40 and single crystal silicon substrate 39 are directly bonded. Then, as shown in FIG. 9, an opening having a predetermined pattern is formed in the single crystal silicon substrate 39 by dry etching.
【００２６】又、他の応用例としては、図８に示すセン
サの製造方法として、図１３，１４，１５に示すように
してもよい。まず、図１３に示す単結晶シリコン基板４
３を用意し、図１４に示すように、単結晶シリコン基板
４３の裏面をウェットエッチングして凹部４４を形成す
る。そして、図１４に示すように、単結晶シリコン基板
４３の薄肉部にドライエッチングにより所定のパターン
の貫通孔４５を形成する。このようして図８に示すセン
サを製造してもよい。As another application example, the method of manufacturing the sensor shown in FIG. 8 may be as shown in FIGS. First, the single crystal silicon substrate 4 shown in FIG.
3, the back surface of the single crystal silicon substrate 43 is wet-etched to form a recess 44, as shown in FIG. Then, as shown in FIG. 14, a through hole 45 having a predetermined pattern is formed in the thin portion of the single crystal silicon substrate 43 by dry etching. In this way, the sensor shown in FIG. 8 may be manufactured.
【００２７】さらに、角速度センサの他にも、２次元加
速度センサとしてもよい。つまり、例えば、図１におい
て、Ｘ軸の加速度を対向電極１３，１７及び対向電極１
４，１８にてコンデンサ容量変化として測定するととも
に、Ｙ軸の加速度を対向電極１１，１５及び対向電極１
２，１６にてコンデンサ容量変化として測定するように
してもよい。Further, in addition to the angular velocity sensor, a two-dimensional acceleration sensor may be used. That is, for example, in FIG. 1, the X-axis acceleration is applied to the counter electrodes 13 and 17 and the counter electrode 1.
4 and 18 measure the change in the capacitance of the capacitor, and measure the acceleration of the Y-axis at the counter electrodes 11 and 15 and the counter electrode 1.
It may be possible to measure the change in the capacitance of capacitors 2 and 16.
【００２８】[0028]
【発明の効果】以上詳述したようにこの発明によれば、
新規な構造の力学量センサとすることができる効果を発
揮する。As described above in detail, according to the present invention,
The effect that it can be used as a mechanical sensor having a novel structure is exhibited.
【図１】実施例の角速度センサの平面図である。FIG. 1 is a plan view of an angular velocity sensor of an embodiment.
【図２】図１のＡ矢視図である。FIG. 2 is a view on arrow A in FIG.
【図３】角速度センサの製造工程を示す断面図である。FIG. 3 is a cross-sectional view showing the manufacturing process of the angular velocity sensor.
【図４】角速度センサの製造工程を示す断面図である。FIG. 4 is a cross-sectional view showing the manufacturing process of the angular velocity sensor.
【図５】角速度センサの製造工程を示す断面図である。FIG. 5 is a cross-sectional view showing the manufacturing process of the angular velocity sensor.
【図６】角速度センサの製造工程を示す断面図である。FIG. 6 is a cross-sectional view showing the manufacturing process of the angular velocity sensor.
【図７】角速度センサの製造工程を示す断面図である。FIG. 7 is a cross-sectional view showing the manufacturing process of the angular velocity sensor.
【図８】別例の角速度センサの平面図である。FIG. 8 is a plan view of an angular velocity sensor of another example.
【図９】図８のＢ−Ｂ断面図である。9 is a sectional view taken along line BB of FIG.
【図１０】別例の角速度センサの製造工程を示す断面図
である。FIG. 10 is a cross-sectional view showing the manufacturing process of the angular velocity sensor of another example.
【図１１】別例の角速度センサの製造工程を示す断面図
である。FIG. 11 is a cross-sectional view showing the manufacturing process of the angular velocity sensor of another example.
【図１２】別例の角速度センサの製造工程を示す断面図
である。FIG. 12 is a cross-sectional view showing the manufacturing process of the angular velocity sensor of another example.
【図１３】別例の応用例の角速度センサの製造工程を示
す断面図である。FIG. 13 is a cross-sectional view showing the manufacturing process of the angular velocity sensor of another application example.
【図１４】別例の応用例の角速度センサの製造工程を示
す断面図である。FIG. 14 is a cross-sectional view showing the manufacturing process of the angular velocity sensor of another application example.
【図１５】別例の応用例の角速度センサの製造工程を示
す断面図である。FIG. 15 is a cross-sectional view showing the manufacturing process of the angular velocity sensor of another application example.
６，７，８，９ 梁 １０ 錘 6,7,8,9 Beam 10 Weight
Claims (1)
梁で形成される面を錘の可動面とし、力学量の作用に伴
う錘の動きを検出するようにしたことを特徴とする力学
量センサ。1. A weight is supported by an L-shaped beam, and a surface formed by the L-shaped beam is used as a movable surface of the weight so that movement of the weight due to the action of a mechanical quantity is detected. A mechanical quantity sensor characterized by the above.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27453092A JP3293194B2 (en) | 1992-10-13 | 1992-10-13 | Mechanical quantity sensor |
| US08/578,371 US5734105A (en) | 1992-10-13 | 1995-12-26 | Dynamic quantity sensor |
| US09/035,018 US6128953A (en) | 1992-10-13 | 1998-03-05 | Dynamical quantity sensor |
| US09/617,801 US6470747B1 (en) | 1992-10-13 | 2000-07-17 | Dynamical quantity sensor |
| US12/381,534 USRE42359E1 (en) | 1992-10-13 | 2009-03-12 | Dynamical quantity sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27453092A JP3293194B2 (en) | 1992-10-13 | 1992-10-13 | Mechanical quantity sensor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28403999A Division JP3293606B2 (en) | 1999-10-05 | 1999-10-05 | Mechanical quantity sensor and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06123632A true JPH06123632A (en) | 1994-05-06 |
| JP3293194B2 JP3293194B2 (en) | 2002-06-17 |
Family
ID=17542997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27453092A Expired - Lifetime JP3293194B2 (en) | 1992-10-13 | 1992-10-13 | Mechanical quantity sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3293194B2 (en) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0942973A (en) * | 1995-08-01 | 1997-02-14 | Nissan Motor Co Ltd | Angle speed sensor |
| EP0778458A1 (en) | 1995-12-05 | 1997-06-11 | Murata Manufacturing Co., Ltd. | Angular velocity sensor |
| EP0795737A1 (en) * | 1996-03-11 | 1997-09-17 | Murata Manufacturing Co., Ltd. | Angular velocity sensor |
| EP0810441A3 (en) * | 1996-05-30 | 1998-12-16 | Texas Instruments Incorporated | Composite sensor |
| US5864064A (en) * | 1995-09-22 | 1999-01-26 | Nippondenso Co., Ltd. | Acceleration sensor having coaxially-arranged fixed electrode and movable electrode |
| US6199430B1 (en) | 1997-06-17 | 2001-03-13 | Denso Corporation | Acceleration sensor with ring-shaped movable electrode |
| EP0833127B1 (en) * | 1996-09-25 | 2001-03-28 | Murata Manufacturing Co., Ltd. | Angular-velocity detection apparatus |
| US6209394B1 (en) | 1997-10-23 | 2001-04-03 | Stmicroelectronics S.R.L. | Integrated angular speed sensor device and production method thereof |
| US6388300B1 (en) | 1999-01-25 | 2002-05-14 | Denso Corporation | Semiconductor physical quantity sensor and method of manufacturing the same |
| JP2003510194A (en) * | 1999-09-27 | 2003-03-18 | インプット／アウトプット，インコーポレーテッド | Temporary bridge for micromachined structure |
| KR100430367B1 (en) * | 2000-07-07 | 2004-05-04 | 가부시키가이샤 무라타 세이사쿠쇼 | External force measuring device |
| JP2006138855A (en) * | 2004-11-12 | 2006-06-01 | Ind Technol Res Inst | Rotation measuring apparatus and fabricating method |
| JP2007532338A (en) * | 2004-04-19 | 2007-11-15 | アナログ デバイシス， インコーポレイテッド | MEMS device with conductive path through substrate |
| JP2009066750A (en) * | 2001-02-20 | 2009-04-02 | Rockwell Automation Technologies Inc | Micro electromechanical system (mems) device |
| JP2011039074A (en) * | 1999-10-13 | 2011-02-24 | Analog Devices Inc | Mechanical sensor, mechanical rate gyroscope including the sensor, and operation method of the gyroscope |
| US8109144B2 (en) | 2008-09-26 | 2012-02-07 | Kabushiki Kaisha Toshiba | Inertia sensor |
| DE10107327B4 (en) * | 2000-02-18 | 2013-01-24 | Denso Corporation | To prevent unnecessary oscillation suitable angular velocity sensor |
-
1992
- 1992-10-13 JP JP27453092A patent/JP3293194B2/en not_active Expired - Lifetime
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0942973A (en) * | 1995-08-01 | 1997-02-14 | Nissan Motor Co Ltd | Angle speed sensor |
| US5864064A (en) * | 1995-09-22 | 1999-01-26 | Nippondenso Co., Ltd. | Acceleration sensor having coaxially-arranged fixed electrode and movable electrode |
| EP0778458A1 (en) | 1995-12-05 | 1997-06-11 | Murata Manufacturing Co., Ltd. | Angular velocity sensor |
| US5900549A (en) * | 1995-12-05 | 1999-05-04 | Murata Manufacturing Co., Ltd. | Angular velocity sensor |
| EP0795737A1 (en) * | 1996-03-11 | 1997-09-17 | Murata Manufacturing Co., Ltd. | Angular velocity sensor |
| US6070463A (en) * | 1996-03-11 | 2000-06-06 | Murata Manufacturing Co., Ltd. | Angular velocity sensor |
| EP0810441A3 (en) * | 1996-05-30 | 1998-12-16 | Texas Instruments Incorporated | Composite sensor |
| EP0833127B1 (en) * | 1996-09-25 | 2001-03-28 | Murata Manufacturing Co., Ltd. | Angular-velocity detection apparatus |
| US6199430B1 (en) | 1997-06-17 | 2001-03-13 | Denso Corporation | Acceleration sensor with ring-shaped movable electrode |
| US6387725B1 (en) | 1997-10-23 | 2002-05-14 | Stmicroelectronics S.R.L. | Production method for integrated angular speed sensor device |
| US6209394B1 (en) | 1997-10-23 | 2001-04-03 | Stmicroelectronics S.R.L. | Integrated angular speed sensor device and production method thereof |
| US6388300B1 (en) | 1999-01-25 | 2002-05-14 | Denso Corporation | Semiconductor physical quantity sensor and method of manufacturing the same |
| JP2003510194A (en) * | 1999-09-27 | 2003-03-18 | インプット／アウトプット，インコーポレーテッド | Temporary bridge for micromachined structure |
| JP2011039074A (en) * | 1999-10-13 | 2011-02-24 | Analog Devices Inc | Mechanical sensor, mechanical rate gyroscope including the sensor, and operation method of the gyroscope |
| DE10107327B4 (en) * | 2000-02-18 | 2013-01-24 | Denso Corporation | To prevent unnecessary oscillation suitable angular velocity sensor |
| KR100430367B1 (en) * | 2000-07-07 | 2004-05-04 | 가부시키가이샤 무라타 세이사쿠쇼 | External force measuring device |
| JP2009066750A (en) * | 2001-02-20 | 2009-04-02 | Rockwell Automation Technologies Inc | Micro electromechanical system (mems) device |
| JP2007532338A (en) * | 2004-04-19 | 2007-11-15 | アナログ デバイシス， インコーポレイテッド | MEMS device with conductive path through substrate |
| JP4732445B2 (en) * | 2004-04-19 | 2011-07-27 | アナログ デバイシス， インコーポレイテッド | MEMS device with conductive path through substrate |
| JP2006138855A (en) * | 2004-11-12 | 2006-06-01 | Ind Technol Res Inst | Rotation measuring apparatus and fabricating method |
| US8109144B2 (en) | 2008-09-26 | 2012-02-07 | Kabushiki Kaisha Toshiba | Inertia sensor |
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