JPH06112534A - Light emitting diode - Google Patents

Light emitting diode

Info

Publication number
JPH06112534A
JPH06112534A JP35007291A JP35007291A JPH06112534A JP H06112534 A JPH06112534 A JP H06112534A JP 35007291 A JP35007291 A JP 35007291A JP 35007291 A JP35007291 A JP 35007291A JP H06112534 A JPH06112534 A JP H06112534A
Authority
JP
Japan
Prior art keywords
emitting diode
light emitting
light
resin
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP35007291A
Other languages
Japanese (ja)
Inventor
Masaru Jinno
勝 神野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP35007291A priority Critical patent/JPH06112534A/en
Publication of JPH06112534A publication Critical patent/JPH06112534A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To enable light emitting diode elements to output a light beam in such a way that the light beam is branched in a left and right directions by providing the diode elements near the slopes of a prism section. CONSTITUTION:The exit light beam from light emitting diode elements 13 are branched in a left and right directions by providing the elements 13 near the slopes 152 and 153 of a prism section 151. For example, a light emitting diode 1 is constituted of a lead 11 one end of which is die-bonded to an infrared- ray emitting diode 13, another lead 12 which is provided in parallel with the lead 11 at a prescribed interval and one end of which is wire-bonded to another light emitting diode element 13 through a gold wire 14, and resin 15 with which the elements 13 and wire 14 are coated. The resin 15 which becomes an important part is integrally molded in a nearly rectangular shape by using, for example, a light transmitting epoxy resin so that its front end can become a prism- like shape. It is preferable to apply black paint to the surface of the resin 15 as a light shielding film except the slopes 152 and 153.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は発光ダイオードに係り、
特に発光ダイオード素子からの出射光を左右２方向に分
岐するようにした発光ダイオードに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode,
In particular, the present invention relates to a light emitting diode in which light emitted from a light emitting diode element is branched into two left and right directions.

【０００２】[0002]

【従来の技術】発光ダイオードのレンズ部にプリズムを
設けたものとして、実開昭59-81051号公報記載の考案が
ある。これは断面が略長将棋駒状のプリズムの底位置に
発光ダイオード素子を設け、この素子からの出射光をプ
リズムにより指向性を持たせるように構成したものであ
る。2. Description of the Related Art There is a device described in Japanese Utility Model Laid-Open No. 59-81051 as a light emitting diode provided with a prism. This is configured such that a light emitting diode element is provided at the bottom position of a prism having a cross-section of a long shogi piece, and light emitted from this element is given directivity by the prism.

【０００３】ところで、従来、ＶＴＲ等のテープの始め
および終わりを検出させるような場合には、発光ダイオ
ード素子からの出射光を左右に分岐せしめて隣接するホ
トインターラプタに入射することが要請される。しかし
ながら、上記従来技術の発光ダイオードでは、単に出射
光に指向性を与えるだけで、左右に分岐させるという機
能は有していないものである。By the way, conventionally, in the case of detecting the beginning and the end of a tape such as a VTR, it is required that the light emitted from the light emitting diode element be branched into right and left and be incident on the adjacent photo interrupter. . However, the above-mentioned conventional light emitting diode does not have a function of branching left and right only by giving directivity to emitted light.

【０００４】出射光を左右に分岐せしめるタイプの発光
ダイオードとして、図３の構成のものがある。同図に示
す発光ダイオード1 は、リード11の上端にダイボンディ
ングされた発光ダイオード素子13を例えば矩形状の透過
性樹脂15で覆い、前記リード11の長手方向に直交する方
向に位置する前記樹脂15の2 側面に凸レンズ20をそれぞ
れ配設し、前記発光ダイオード素子13からの出射光( 図
中矢印で示す) を前記凸レンズ20を介して横方向に分岐
出力させるものである。As a type of light emitting diode that splits emitted light into right and left, there is a structure shown in FIG. In the light emitting diode 1 shown in the figure, the light emitting diode element 13 die-bonded to the upper end of the lead 11 is covered with, for example, a rectangular transparent resin 15, and the resin 15 positioned in a direction orthogonal to the longitudinal direction of the lead 11 is used. The convex lenses 20 are respectively provided on the two side surfaces of the above, and the light emitted from the light emitting diode element 13 (indicated by an arrow in the drawing) is branched and output in the lateral direction via the convex lenses 20.

【０００５】[0005]

【発明が解決しようとする課題】しかしながら、前記発
光ダイオード素子13の表面から発する光と、側面から発
する光とでは、表面から発する光のほうが通常5 〜10倍
程度多く、従って前記発光ダイオード素子13の側面方向
に凸レンズ20が位置する関係上、前記光を効率よく集光
できず、外部への出力が低くなるという傾向がある。ま
た、上記形状の発光ダイオードをトランスファモールド
成型以外で生産するにはほとんど不可能であるという問
題があった。本発明は上記事情に鑑みて創案されたもの
で、発光ダイオード素子からの出射光を左右に効率良く
分岐させて出力せしめ得るようにした発光ダイオードを
提供することを目的としている。However, with respect to the light emitted from the surface of the light emitting diode element 13 and the light emitted from the side surface, the light emitted from the surface is usually about 5 to 10 times more, and therefore, the light emitting diode element 13 is larger. Due to the position of the convex lens 20 in the lateral direction, the light cannot be efficiently collected, and the output to the outside tends to be low. Further, there is a problem that it is almost impossible to produce the light emitting diode having the above-mentioned shape by means other than transfer molding. The present invention was devised in view of the above circumstances, and an object thereof is to provide a light emitting diode capable of efficiently branching the light emitted from the light emitting diode element to the left and right and outputting the branched light.

【０００６】[0006]

【課題を解決するための手段】本発明に係る発光ダイオ
ードは、発光ダイオード素子をプリズム部の傾斜面付近
に設けることにより、素子からの出射光を左右２方向に
分岐するようにしたことを特徴としている。また前記プ
リズム部の形状は略長い将棋駒状であり、素子をプリズ
ム部の先端付近に配設したものおよびプリズム部の傾斜
面を除く面には、遮光被膜を塗布したものも含んでい
る。A light emitting diode according to the present invention is characterized in that a light emitting diode element is provided in the vicinity of an inclined surface of a prism portion so that light emitted from the element is branched into two left and right directions. I am trying. The shape of the prism portion is a substantially long shogi piece shape, and includes elements in which elements are arranged near the tip of the prism portion and those in which a light-shielding coating is applied to the surface of the prism portion excluding the inclined surface.

【０００７】[0007]

【実施例】以下、図面を参照して本発明に係る実施例を
説明する。図１はこの発明に係る発光ダイオードの1 実
施例を示す外観斜視図、図２は発光ダイオード素子から
の出射光の屈折状態（分岐状態) を示す説明図である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is an external perspective view showing an embodiment of a light emitting diode according to the present invention, and FIG. 2 is an explanatory view showing a refraction state (branched state) of light emitted from a light emitting diode element.

【０００８】図において、1 は発光ダイオードであり、
一端に例えば赤外発光の発光ダイオード素子13がダイボ
ンディングされたリード11と、このリード11と所定間隔
をもって平行に配設されかつ一端と前記発光ダイオード
素子13とが金線14でワイヤボンディングされたリード12
と、これらを覆う樹脂15でもって構成されている。In the figure, 1 is a light emitting diode,
For example, a lead 11 to which an infrared light emitting diode element 13 is die-bonded at one end, and the lead 11 is arranged in parallel with the lead 11 at a predetermined interval, and the one end and the light emitting diode element 13 are wire-bonded with a gold wire 14. Reed 12
And a resin 15 that covers them.

【０００９】前記リード11は、発光ダイオード素子13が
ダイボンディングされる部分が略逆台形状になってい
る。The lead 11 has a substantially inverted trapezoidal shape at a portion to which the light emitting diode element 13 is die-bonded.

【００１０】この実施例において、要部となる樹脂15
は、例えば透過性のエポシキ系統の樹脂からなり、先端
がプリズム形状として略矩形体にキャスティング注型で
もって一体に成型されている。具体的には、プリズム部
151 は、それぞれ先端中心から本実施例では45度ずつ傾
斜させた傾斜面152 、153 を有する。この傾斜面152 、
153 は、図２の一点鎖線で示すように、発光ダイオード
素子13から発する光( 特に表面から発する光)を適宜に
屈折して横方向( リード11、12の長手方向と直交する方
向) に分岐して出力させるようになっている。なお、前
記傾斜面152 、153 を除く樹脂15には遮光被膜として黒
色の塗料が塗布されるのが好ましい。In this embodiment, the resin 15 which is the main part
Is made of, for example, a transparent epoxy resin, and is integrally molded by casting using a substantially rectangular body having a prism-shaped tip. Specifically, the prism part
151 has inclined surfaces 152 and 153 which are respectively inclined by 45 degrees from the center of the tip in this embodiment. This inclined surface 152,
153, as indicated by the alternate long and short dash line in FIG. And output it. It is preferable that a black paint is applied as a light-shielding film to the resin 15 excluding the inclined surfaces 152 and 153.

【００１１】しかして、上記発光ダイオード1 は例えば
その傾斜面152 、153 と対向する位置にそれぞれ受光素
子を所定間隔を介して配設することにより、ホトインタ
ラプターとして使用することができる。上記のようにホ
トインタラプターとして使用できる他、別途適宜に使用
されうるものであることは勿論である。Therefore, the light emitting diode 1 can be used as a photointerrupter, for example, by arranging light receiving elements at positions facing the inclined surfaces 152 and 153 at predetermined intervals. As a matter of course, it can be used as a photo interrupter as described above, and can also be appropriately used separately.

【００１２】なお、この発明は図示の実施例に限定され
ず、例えばプリズム部151 の各傾斜面152 、153 を凸レ
ンズをそれぞれ別途設けることも考えられる。またこの
発明はその生産性を向上させるために、キャスティング
注型によって成型されるとして説明したが、これに限定
されず、例えばトランスファモールドにて成型されるも
のであってもよく、その生産方法は特に限定されないも
のである。The present invention is not limited to the illustrated embodiment, and it is conceivable that, for example, the inclined surfaces 152 and 153 of the prism portion 151 are separately provided with convex lenses. Further, the present invention has been described as being cast by casting in order to improve its productivity, but the present invention is not limited to this, and it may be cast by transfer molding, for example. It is not particularly limited.

【００１３】[0013]

【発明の効果】本発明によれば、発光ダイオード素子か
ら発する光の量の多い表面から発する光を樹脂先端のプ
リズム部にて適宜に屈折させて横方向に分岐出力させる
ことができるから、従来のものと比較して非常に効率よ
くかつ有効に光を出力せしめることができ、ＶＴＲ等の
ホトインタラプターと組み合わせて使用するのに大変好
都合のものである。According to the present invention, the light emitted from the surface emitting a large amount of light from the light emitting diode element can be appropriately refracted by the prism portion at the tip of the resin to be branched and output in the lateral direction. It can output light very efficiently and effectively as compared with the above, and is very convenient to use in combination with a photo interrupter such as a VTR.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明に係る図面であって、発光ダイオードの
1 実施例の外観斜視図である。FIG. 1 is a view of a light emitting diode according to the present invention.
1 is an external perspective view of an embodiment.

【図２】本発明に係る図面であって、発光ダイオード素
子から発する光の分岐状態を示す説明図である。FIG. 2 is a view according to the present invention, which is an explanatory diagram showing a branched state of light emitted from a light emitting diode element.

【図３】従来技術に係る図面であって、発光ダイオード
の一例を示す説明図である。FIG. 3 is a drawing related to the prior art and is an explanatory diagram showing an example of a light emitting diode.

【符号の説明】[Explanation of symbols]

1 発光ダイオード 13 発光ダイオード素子 15 樹脂 151 プリズム部 152 、153 傾斜面 1 Light emitting diode 13 Light emitting diode element 15 Resin 151 Prisms 152, 153 Inclined surface

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】 発光ダイオード素子をプリズム部の傾斜
面付近に設けることにより、素子からの出射光を左右２
方向に分岐するようにしたことを特徴とする発光ダイオ
ード。1. A light emitting diode element is provided in the vicinity of an inclined surface of a prism portion so that light emitted from the element can be divided into right and left portions.
A light emitting diode characterized by being branched in a direction. 【請求項２】 前記プリズム部の形状は略長い将棋駒状
であり、素子をプリズム部の先端付近に配設したもので
ある請求項１記載の発光ダイオード。2. The light emitting diode according to claim 1, wherein the prism portion has a shape of a long shogi piece, and the element is arranged near the tip of the prism portion. 【請求項３】 前記プリズム部の傾斜面を除く面には、
遮光被膜を塗布した請求項１記載の発光ダイオード。3. The surface of the prism portion excluding the inclined surface,
The light emitting diode according to claim 1, which is coated with a light shielding film.
JP35007291A 1991-12-09 1991-12-09 Light emitting diode Pending JPH06112534A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP35007291A JPH06112534A (en) 1991-12-09 1991-12-09 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35007291A JPH06112534A (en) 1991-12-09 1991-12-09 Light emitting diode

Publications (1)

Publication Number Publication Date
JPH06112534A true JPH06112534A (en) 1994-04-22

Family

ID=18408041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35007291A Pending JPH06112534A (en) 1991-12-09 1991-12-09 Light emitting diode

Country Status (1)

Country Link
JP (1) JPH06112534A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004253436A (en) * 2003-02-18 2004-09-09 Citizen Electronics Co Ltd Light emitting diode
DE102005035192A1 (en) * 2004-11-04 2006-05-24 Agilent Technologies, Inc. (n.d.Ges.d.Staates Delaware), Palo Alto Side emitting LED device and method of manufacture
US7094619B2 (en) 1992-12-17 2006-08-22 Kabushiki Kaisha Toshiba Method of fabricating a light emitting device
CN104078552B (en) * 2014-05-21 2017-01-25 深圳莱特光电股份有限公司 Infrared light-emitting diode

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JPS58216478A (en) * 1982-06-09 1983-12-16 Hitachi Ltd Light emitting diode

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7094619B2 (en) 1992-12-17 2006-08-22 Kabushiki Kaisha Toshiba Method of fabricating a light emitting device
US7288795B2 (en) 1992-12-17 2007-10-30 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method for manufacturing the device
US7297984B2 (en) 1992-12-17 2007-11-20 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method for manufacturing the device
US7315046B2 (en) 1992-12-17 2008-01-01 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method for manufacturing the device
JP2004253436A (en) * 2003-02-18 2004-09-09 Citizen Electronics Co Ltd Light emitting diode
DE102005035192A1 (en) * 2004-11-04 2006-05-24 Agilent Technologies, Inc. (n.d.Ges.d.Staates Delaware), Palo Alto Side emitting LED device and method of manufacture
DE102005035192B4 (en) * 2004-11-04 2008-08-14 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Side emitting LED device and method of manufacture
CN104078552B (en) * 2014-05-21 2017-01-25 深圳莱特光电股份有限公司 Infrared light-emitting diode

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