JPH0593827A - Optical reception module - Google Patents

Optical reception module

Info

Publication number
JPH0593827A
JPH0593827A JP3256525A JP25652591A JPH0593827A JP H0593827 A JPH0593827 A JP H0593827A JP 3256525 A JP3256525 A JP 3256525A JP 25652591 A JP25652591 A JP 25652591A JP H0593827 A JPH0593827 A JP H0593827A
Authority
JP
Japan
Prior art keywords
light receiving
optical
semiconductor substrate
optical fiber
receiving element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3256525A
Other languages
Japanese (ja)
Other versions
JP3003324B2 (en
Inventor
Goro Sasaki
吾朗 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP3256525A priority Critical patent/JP3003324B2/en
Priority to US07/953,082 priority patent/US5357103A/en
Priority to DE69217795T priority patent/DE69217795T2/en
Priority to EP92116883A priority patent/EP0535690B1/en
Publication of JPH0593827A publication Critical patent/JPH0593827A/en
Priority to US08/280,838 priority patent/US5466558A/en
Application granted granted Critical
Publication of JP3003324B2 publication Critical patent/JP3003324B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

PURPOSE:To provide the optical reception module which is so structured as to provide excellent and uniform optical coupling between an optical fiber and a photodetecting element and improve the mass productivity. CONSTITUTION:The optical reception module is equipped with the photodetecting element 26 provided on one surface of a semiconductor substrate 24, a long groove 28 which is formed on the reverse surface of the semiconductor substrate 24 facing the photodetecting element 26 and has a slanting surface 32 at its tail end part opposite the photodetection surface of the photodetecting element 26 at an acute angle theta, and the optical fiber 30 which is fixed in the long groove 28 so that the tail end surface faces the slanting surface 32; and a light signal transmitted through the optical fiber is reflected by the slanting surface 32 and made incident on the photodetecting element 26 from the reverse surface side of the semiconductor substrate 24.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、光ファイバ通信に用い
られる光受信モジュールに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical receiver module used for optical fiber communication.

【0002】[0002]

【従来の技術】光受信モジュールとして、信学技報Vo
l.91,No.201(OQE 91−60〜68)
に開示されたものが知られている。従来、かかる光受信
モジュールは、図6や図7に示す構造となっていた。
2. Description of the Related Art As an optical receiving module,
l. 91, No. 201 (OQE 91-60 to 68)
The one disclosed in is known. Conventionally, such an optical receiver module has a structure shown in FIGS. 6 and 7.

【0003】図6に示す光受信モジュールは、下側パッ
ケージ2の内部に受光素子4とプリアンプ回路を形成し
たICチップ6を固着し、光ファイバー8をその終端部
が受光素子4の受光面に対向するようにして上側パッケ
ージ10に垂直に固定すると共に、下側パッケージ2と
上側パッケージ10を密封して外部からの光の漏れ入射
を阻止する構造となっている。
In the optical receiving module shown in FIG. 6, a light receiving element 4 and an IC chip 6 on which a preamplifier circuit is formed are fixed inside a lower package 2, and an optical fiber 8 has its terminal end facing the light receiving surface of the light receiving element 4. As described above, the structure is fixed vertically to the upper package 10, and the lower package 2 and the upper package 10 are hermetically sealed to prevent leakage of light from the outside.

【0004】そして、光ファイバー8を伝送して来た光
信号を受光素子4で受光して電気信号に変換し、更に電
気信号をICチップ6のプリアンプ回路で増幅して、リ
ード端子12を介して出力する。
Then, the optical signal transmitted through the optical fiber 8 is received by the light receiving element 4 and converted into an electric signal, and the electric signal is further amplified by the preamplifier circuit of the IC chip 6 and passed through the lead terminal 12. Output.

【0005】一方、図7に示す光受信モジュールは、外
部からの光の漏れ入射を阻止するための密封構造を有す
るパッケージ14の内部に、受光素子16とプリアンプ
回路を形成したICチップ18を固着し、受光素子16
の受光面に対して光ファイバー20の終端部を平行に配
置した構造となっている。更に、光ファイバー20の終
端部は斜めに研磨され、光ファイバー20を伝送して来
た光を該研磨面22で反射して受光素子16の受光面に
入射させる形状となっている。
On the other hand, in the light receiving module shown in FIG. 7, a light receiving element 16 and an IC chip 18 in which a preamplifier circuit is formed are fixed inside a package 14 having a sealed structure for preventing light from leaking from the outside. The light receiving element 16
The end portion of the optical fiber 20 is arranged in parallel with the light receiving surface of the. Further, the end portion of the optical fiber 20 is obliquely polished so that the light transmitted through the optical fiber 20 is reflected by the polishing surface 22 and is incident on the light receiving surface of the light receiving element 16.

【0006】そして、受光素子16で光電変換した電気
信号をICチップ18のプリアンプ回路で増幅して、リ
ード端子(図示せず)を介して出力する。
Then, the electric signal photoelectrically converted by the light receiving element 16 is amplified by the preamplifier circuit of the IC chip 18 and output through a lead terminal (not shown).

【0007】[0007]

【発明が解決しようとする課題】しかしながら、このよ
うな構造を有する従来の光受信モジュールにあっては、
パッケージにICチップ、受光素子及び光ファイバーを
個々独立に配置して固着することで一体化する構造とな
っており、夫々の部品の位置決め精度が光ファイバーと
受光素子との対向精度を決定するので、受光感度のばら
つきを招来したり、規定通りの受光感度を得るようにひ
とつひとつ位置決め調整しながら製造する必要があるこ
とから製造が煩雑となり、生産性の向上が図れないとい
う問題があった。
However, in the conventional optical receiver module having such a structure,
The IC chip, the light receiving element, and the optical fiber are separately arranged and fixed to the package to be integrated, and the positioning accuracy of each component determines the facing accuracy between the optical fiber and the light receiving element. There is a problem in that the manufacturing is complicated and the productivity cannot be improved because the manufacturing process becomes complicated because the manufacturing process is complicated because it causes the variation of the sensitivity and it is necessary to adjust the positioning one by one so as to obtain the light receiving sensitivity as specified.

【0008】特に、複数の光ファイバーとそれに対応す
る複数の受光素子をアレー状に配列して並列通信を行う
ようにした光受信モジュールにあっては、光ファイバー
と受光素子との光結合を全ての組合せについて良好且つ
均一にしなければならないことから、極めて高い機械精
度が必要となり、歩止まり等の点で十分な生産性が得ら
れない問題があった。
Particularly, in an optical receiver module in which a plurality of optical fibers and a plurality of corresponding light receiving elements are arranged in an array for parallel communication, all combinations of optical coupling between the optical fibers and the light receiving elements are provided. Therefore, there is a problem that extremely high mechanical accuracy is required and sufficient productivity cannot be obtained in terms of yield and the like.

【0009】本発明はこのような従来の課題に鑑みて成
されたものであり、光ファイバーと受光素子との光結合
を良好且つ均一に設定することができると共に、生産性
向上を図るのに優れた構造を有する光受信モジュールを
提供することを目的とする。
The present invention has been made in view of such conventional problems, and it is possible to set the optical coupling between the optical fiber and the light receiving element satisfactorily and uniformly and is excellent in improving productivity. It is an object of the present invention to provide an optical receiver module having a different structure.

【0010】[0010]

【課題を解決するための手段】このような目的を達成す
るために本発明は、半導体基板の一面に設けられた受光
素子と、該受光素子に対向する該半導体基板の裏面に形
成されると共に、終端部に該受光素子の受光面と鋭角度
をもって対向する傾斜面を有する溝と、終端面を該傾斜
面に対向して該溝内に固着された光ファイバーとを具備
する構造とした。
In order to achieve such an object, the present invention provides a light-receiving element provided on one surface of a semiconductor substrate and a back surface of the semiconductor substrate facing the light-receiving element. The structure is provided with a groove having an inclined surface facing the light receiving surface of the light receiving element at an acute angle at the terminal end portion, and an optical fiber fixed in the groove with the terminal surface facing the inclined surface.

【0011】又、半導体基板の一面に設けられた複数の
受光素子と、これらの受光素子に対向する該半導体基板
の裏面に形成されると共に、夫々の終端部に上記夫々の
受光素子の各受光面と鋭角度をもって対向する傾斜面を
有する複数の溝と、終端面を上記傾斜面に対向して上記
夫々の溝内に個々独立に固着された複数の光ファイバー
とを具備することで、複数の光通信を行う光受信モジュ
ールを構成した。
Further, a plurality of light receiving elements provided on one surface of the semiconductor substrate and a back surface of the semiconductor substrate facing the light receiving elements are formed, and the respective light receiving elements of the respective light receiving elements are formed at their respective end portions. By providing a plurality of grooves each having an inclined surface facing the surface at an acute angle, and a plurality of optical fibers individually fixed in the respective grooves with their end surfaces facing the inclined surface, An optical receiver module for optical communication was constructed.

【0012】更に、上記溝を、フォト・マスク及び食刻
処理によって形成することとした。
Further, the groove is formed by a photo mask and an etching process.

【0013】[0013]

【作用】このような構成によれば、上記溝に固着された
光ファイバーを伝送してきた光信号を上記傾斜面で反射
して半導体基板の裏面側から受光素子に入射させ、光フ
ァイバーと受光素子との間での極めて高精度の光結合を
実現することができ、更に、機械的な可動部分を排除す
ることができることから耐久性に優れている。
According to this structure, the optical signal transmitted from the optical fiber fixed to the groove is reflected by the inclined surface and is incident on the light receiving element from the back surface side of the semiconductor substrate, and the optical fiber and the light receiving element are combined. It is possible to realize extremely high precision optical coupling between the two parts, and further, it is possible to eliminate mechanical moving parts, so that it is excellent in durability.

【0014】又、周知のプレーナ・プロセス等を適用し
て製造することにより、高い位置決め精度で上記溝を形
成することができるので、特性の向上及び均一化を容易
に実現でき、生産性の向上を図ることができる。
Further, since the groove can be formed with high positioning accuracy by manufacturing by applying a well-known planar process or the like, it is possible to easily realize improvement of characteristics and uniformity, and improvement of productivity. Can be planned.

【0015】[0015]

【実施例】以下、本発明による光受信モジュールの一実
施例を図面と共に説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of an optical receiver module according to the present invention will be described below with reference to the drawings.

【0016】図1は、1本の光ファイバーで伝送されて
くる光信号を1個の受光素子で受信する基本的な光受信
モジュールを示す。図1において、インジウム・リン結
晶の半導体基板24の上面に受光素子26を設け、半導
体基板24の裏面に形成された長溝28内に光ファイバ
ー30を嵌め込んで固着し、光ファイバー30で伝送さ
れてくる光信号を半導体基板24の裏面側から上面の受
光素子26に入射させる構造となっている。
FIG. 1 shows a basic optical receiving module in which an optical signal transmitted by one optical fiber is received by one light receiving element. In FIG. 1, a light receiving element 26 is provided on the upper surface of a semiconductor substrate 24 of indium phosphide crystal, an optical fiber 30 is fitted and fixed in a long groove 28 formed on the back surface of the semiconductor substrate 24, and transmitted by the optical fiber 30. The structure is such that an optical signal is incident on the light receiving element 26 on the upper surface from the back surface side of the semiconductor substrate 24.

【0017】ここで、受光素子26は、基本的にはガリ
ウム・インジウム・砒素層にpn接合を形成したpin
型フォトダイオード、又はアバランシェフォトダイオー
ドが適用され、受光径が30μmないし80μm程度に
設定されている。
Here, the light receiving element 26 is basically a pin in which a pn junction is formed in a gallium / indium / arsenic layer.
Type photodiode or avalanche photodiode is applied, and the light receiving diameter is set to about 30 μm to 80 μm.

【0018】長溝28は、半導体基板24の裏面に化学
的ウェットエッチングによる食刻で約100μm程度の
深さに形成され、長溝28の終端部が受光素子26の受
光面と対向する位置関係に設定し、更に、その終端部は
受光素子26の受光面に対して鋭角度θをもって傾斜す
る傾斜面32となっている。
The long groove 28 is formed on the back surface of the semiconductor substrate 24 by etching by chemical wet etching so as to have a depth of about 100 μm, and the end portion of the long groove 28 is set in such a positional relationship that it faces the light receiving surface of the light receiving element 26. Further, the terminal end thereof is an inclined surface 32 which is inclined with respect to the light receiving surface of the light receiving element 26 at an acute angle θ.

【0019】光ファイバー30の終端面は長手方向に対
して垂直にカットされており、該終端面と傾斜面32が
対向して長溝28内に固着している。したがって、光フ
ァイバー30を伝送して該終端面から出力した光信号
は、傾斜面32で反射し、更に、半導体基板24中を透
過して受光素子26の受光面に裏面側から入射する。
The end surface of the optical fiber 30 is cut perpendicularly to the longitudinal direction, and the end surface and the inclined surface 32 face each other and are fixed in the long groove 28. Therefore, the optical signal transmitted through the optical fiber 30 and output from the terminal surface is reflected by the inclined surface 32, further transmitted through the semiconductor substrate 24, and incident on the light receiving surface of the light receiving element 26 from the back surface side.

【0020】図2は、図1のX−X線矢視断面図、図3
は、半導体基板24の裏面側から見た背面図であり、光
ファイバー30を熱硬化性接着剤や半田34によって長
溝28内に固着している。
FIG. 2 is a sectional view taken along the line X--X in FIG.
6 is a rear view of the semiconductor substrate 24 as viewed from the rear surface side, and the optical fiber 30 is fixed in the long groove 28 with a thermosetting adhesive or solder 34.

【0021】そして、受光素子26と光ファイバー30
を一体に固着した半導体基板24全体を、外部からの光
の侵入を阻止するように密封した構造のパッケージ(図
示せず)内に収納し、更に、受光素子26が光電変換し
た電気信号を増幅するためのプリアンプ回路を形成した
ICチップ(図示せず)等も同時に該パッケージ内に設
けられる。
Then, the light receiving element 26 and the optical fiber 30
The entire semiconductor substrate 24, which is integrally fixed to the above, is housed in a package (not shown) having a sealed structure so as to prevent light from entering from the outside, and further the electric signal photoelectrically converted by the light receiving element 26 is amplified. An IC chip (not shown) or the like having a preamplifier circuit for doing so is also provided in the package at the same time.

【0022】次に、かかる構造の光受信モジュールの製
造工程を図4のフローチャートに従って説明する。
Next, the manufacturing process of the optical receiving module having the above structure will be described with reference to the flowchart of FIG.

【0023】まず、第1の工程Aでは、半導体基板24
の裏面に両面マスクアライナを用いて、長溝32を形成
すべき面を除く残余の面にフォトレジストを塗設する。
尚、長溝32の終端部が受光素子26の受光面と対向す
る位置となるように設計される。
First, in the first step A, the semiconductor substrate 24
Using a double-sided mask aligner on the back surface of the photoresist, a photoresist is applied on the remaining surface except the surface where the long groove 32 is to be formed.
The end of the long groove 32 is designed to face the light receiving surface of the light receiving element 26.

【0024】次の第2の工程Bでは、このフォトレジス
トをエッチングマスクトして、例えば、臭素とメタノー
ルから成るエッチング液を用いた化学的ウェットエッチ
ングにより、フォトレジスト以外の部分を約100μm
程度の深さに食刻した後、フォトレジストを除去する。
In the next second step B, this photoresist is used as an etching mask and, for example, by chemical wet etching using an etching solution composed of bromine and methanol, the portion other than the photoresist is exposed to about 100 μm.
After etching to a certain depth, the photoresist is removed.

【0025】この第2の工程Bの処理により、〈01
〉及び〈01〉方向のエッチング面が半導体基板2
4の裏面(100)に対して鋭角となる長溝28が形成
され、同時に、長溝28の受光素子26と対向する終端
部には、半導体基板24の結晶方位によって、裏面と鋭
角になる所謂逆メサ(内側に向けて凹状となる段部)が
形成されことで、約54°の鋭角度の傾斜面32が形成
される。
By the processing of this second step B, <01
1 > and <0 1 1> direction etching surface is the semiconductor substrate 2
4, a long groove 28 having an acute angle with respect to the back surface (100) is formed, and at the same time, a so-called reverse mesa having an acute angle with the back surface is formed at the terminal end of the long groove 28 facing the light receiving element 26, depending on the crystal orientation of the semiconductor substrate 24. By forming the (step portion that is concave toward the inside), the inclined surface 32 having an acute angle of about 54 ° is formed.

【0026】次の第3の工程Cでは、光ファイバー30
の終端面を傾斜面32に対向させるようにして、光ファ
イバー30を長溝28に嵌め込み、接着材等によって半
導体基板24の裏面に固着し、パッケージ内に組み込む
ことで組立工程を完了する。この実施例の構造及びこれ
らの処理工程によれば、受光素子26と傾斜面32との
対向精度及び傾斜面32と光ファイバー30の終端部と
の対向精度を、周知の基本的なプレーナ・プロセス等に
よって、容易に1μm以内に設定することが可能である
ことから、光ファイバー30と受光素子26の間での極
めて高精度の光結合を実現することができ、更に、機械
的な可動部分を排除することができることから、耐久性
にも優れている。
In the next third step C, the optical fiber 30
The assembly process is completed by fitting the optical fiber 30 into the long groove 28 so that the end surface of the optical fiber 30 faces the inclined surface 32, fixing the optical fiber 30 to the back surface of the semiconductor substrate 24 with an adhesive or the like, and assembling it in the package. According to the structure of this embodiment and the processing steps thereof, the facing accuracy between the light receiving element 26 and the inclined surface 32 and the facing accuracy between the inclined surface 32 and the end portion of the optical fiber 30 can be determined by a well-known basic planar process or the like. Since it can be easily set to 1 μm or less, it is possible to realize highly accurate optical coupling between the optical fiber 30 and the light receiving element 26, and further to eliminate mechanical moving parts. Because it is possible, it has excellent durability.

【0027】次に、他の実施例を図5と共に説明する。
この実施例は、半導体基板36の上面にアレー状に設け
られた複数の受光素子群38の夫々の受光素子の受光面
に対向するように、前述の第1の実施例と同様に製造工
程を適用することによって、半導体基板36の裏面に複
数の長溝を形成し、これらの長溝に複数の光ファイバー
群40を固着している。
Next, another embodiment will be described with reference to FIG.
In this embodiment, the manufacturing process is performed in the same manner as in the first embodiment described above so as to face the light receiving surface of each light receiving element of the plurality of light receiving element groups 38 provided in the array on the upper surface of the semiconductor substrate 36. By applying it, a plurality of long grooves are formed on the back surface of the semiconductor substrate 36, and a plurality of optical fiber groups 40 are fixed to these long grooves.

【0028】ここで、各受光素子に対向する各長溝の終
端部は、図1に示したのと同様に、鋭角度θの傾斜面と
なっており、各長溝に固着された各光ファイバーを伝送
してきた光信号をこれらの傾斜面で反射して夫々所定の
受光素子に入射させる構造となっている。
Here, the end portion of each long groove facing each light receiving element is an inclined surface having an acute angle θ as in the case shown in FIG. 1, and each optical fiber fixed to each long groove is transmitted. The optical signal thus received is reflected by these inclined surfaces and made incident on a predetermined light receiving element.

【0029】そして、各受光素子で光電変換した電気信
号を、個々独立に設けられたプリアンプ回路で増幅し、
ボンディングワイヤーを介して所定のリード端子に出力
するように成っており、更に、全体を外部光の入射を阻
止する密閉パッケージ内に収納している。
Then, the electric signal photoelectrically converted by each light receiving element is amplified by a preamplifier circuit provided independently.
It is configured to output to a predetermined lead terminal via a bonding wire, and is further housed in a hermetically sealed package that blocks incidence of external light.

【0030】この実施例に示すように、本発明は、複数
の光通信を並列処理する光受信モジュールに適用でき、
優れた光結合と耐久性に優れた並列処理型の光受信モジ
ュールを実現する上で極めて優れた技術を提供するもの
である。
As shown in this embodiment, the present invention can be applied to an optical receiving module for processing a plurality of optical communications in parallel,
The present invention provides an extremely excellent technique for realizing a parallel processing type optical receiving module having excellent optical coupling and durability.

【0031】[0031]

【発明の効果】以上説明したように、本発明によれば、
半導体基板の一面に設けられた受光素子と、該受光素子
に対向する該半導体基板の裏面に形成されると共に、終
端部に該受光素子の受光面と鋭角度をもって対向する傾
斜面を有する溝と、終端面を該傾斜面に対向して該溝内
に固着された光ファイバーとを具備し、溝に固着された
光ファイバーを伝送してきた光信号を傾斜面で反射して
半導体基板の裏面側から受光素子に入射させる構造とし
たので、光ファイバーと受光素子との間での極めて高精
度の光結合を実現することができ、更に、機械的な可動
部分を排除することができることから耐久性に優れてい
る。
As described above, according to the present invention,
A light-receiving element provided on one surface of the semiconductor substrate, and a groove formed on the back surface of the semiconductor substrate facing the light-receiving element and having an inclined surface at the terminal end that faces the light-receiving surface of the light-receiving element at an acute angle. , An optical fiber fixed in the groove with an end surface facing the inclined surface, and an optical signal transmitted from the optical fiber fixed in the groove is reflected by the inclined surface and received from the back surface side of the semiconductor substrate. Since the structure is made to enter the element, it is possible to realize extremely high-precision optical coupling between the optical fiber and the light receiving element, and further it is possible to eliminate mechanical moving parts, so that it has excellent durability. There is.

【0032】又、周知のプレーナ・プロセス等を適用し
て製造することにより、高い位置決め精度で上記溝を形
成することができるので、特性の向上及び均一化を容易
に実現でき、生産性の向上を図ることができる。特に、
優れた光結合と耐久性が要求される並列処理型の光受信
モジュールに適用した場合に、極めて優れた技術を提供
することができる。
Further, since the groove can be formed with high positioning accuracy by applying the well-known planer process or the like, it is possible to easily improve the characteristics and make the groove uniform and improve the productivity. Can be planned. In particular,
When applied to a parallel processing type optical receiver module that requires excellent optical coupling and durability, an extremely excellent technique can be provided.

【図面の簡単な説明】[Brief description of drawings]

【図1】一実施例の要部縦断面構造を示す縦断面図であ
る。
FIG. 1 is a vertical cross-sectional view showing a main part vertical cross-section structure of one embodiment.

【図2】図1のX−X線矢視断面図である。FIG. 2 is a sectional view taken along line XX of FIG.

【図3】一実施例の背面図である。FIG. 3 is a rear view of the embodiment.

【図4】製造工程を説明するためのフローチャートであ
る。
FIG. 4 is a flowchart for explaining a manufacturing process.

【図5】他の実施例の外観構造を示す斜視図である。FIG. 5 is a perspective view showing an external structure of another embodiment.

【図6】従来例の構造を概略的に示す断面図である。FIG. 6 is a sectional view schematically showing the structure of a conventional example.

【図7】他の従来例の構造を概略的に示す断面図であ
る。
FIG. 7 is a sectional view schematically showing the structure of another conventional example.

【符号の説明】[Explanation of symbols]

24,36;半導体基板 26;受光素子 28;長溝 30;光ファイバー 32;傾斜面 38;受光素子群 40;光ファイバー群 24, 36; semiconductor substrate 26; light receiving element 28; long groove 30; optical fiber 32; inclined surface 38; light receiving element group 40; optical fiber group

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 半導体基板の一面に設けられた受光素子
と、 該受光素子に対向する該半導体基板の裏面に形成される
と共に、終端部に該受光素子の受光面と鋭角度をもって
対向する傾斜面を有する溝と、 終端面を該傾斜面に対向して該溝内に固着された光ファ
イバーと、を具備する光受信モジュール。
1. A light-receiving element provided on one surface of a semiconductor substrate, and an inclination formed on the back surface of the semiconductor substrate facing the light-receiving element and facing the light-receiving surface of the light-receiving element at an end portion at an acute angle. An optical receiving module comprising: a groove having a surface; and an optical fiber fixed in the groove with an end surface facing the inclined surface.
【請求項2】 半導体基板の一面に設けられた複数の受
光素子と、 これらの受光素子に対向する該半導体基板の裏面に形成
されると共に、夫々の終端部に上記夫々の受光素子の各
受光面と鋭角度をもって対向する傾斜面を有する複数の
溝と、 終端面を上記傾斜面に対向して上記夫々の溝内に個々独
立に固着された複数の光ファイバーと、を具備する光受
信モジュール。
2. A plurality of light receiving elements provided on one surface of a semiconductor substrate, and a plurality of light receiving elements formed on the back surface of the semiconductor substrate facing these light receiving elements, and each of the light receiving elements of the respective light receiving elements at their respective end portions. An optical receiving module comprising: a plurality of grooves each having an inclined surface facing the surface at an acute angle; and a plurality of optical fibers individually fixed in the respective grooves with their end surfaces facing the inclined surface.
【請求項3】 前記溝は、フォト・マスク及び食刻処理
によって形成される請求項1又は請求項2の光受信モジ
ュール。
3. The optical receiver module according to claim 1, wherein the groove is formed by a photo mask and an etching process.
JP3256525A 1991-10-02 1991-10-03 Optical receiving module Expired - Fee Related JP3003324B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP3256525A JP3003324B2 (en) 1991-10-03 1991-10-03 Optical receiving module
US07/953,082 US5357103A (en) 1991-10-02 1992-09-29 Light receiving module with optical fiber coupling
DE69217795T DE69217795T2 (en) 1991-10-02 1992-10-02 Light receiver module
EP92116883A EP0535690B1 (en) 1991-10-02 1992-10-02 Light receiving module
US08/280,838 US5466558A (en) 1991-10-02 1994-07-26 Method of manufacturing a light receiving module with optical fiber coupling

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3256525A JP3003324B2 (en) 1991-10-03 1991-10-03 Optical receiving module

Publications (2)

Publication Number Publication Date
JPH0593827A true JPH0593827A (en) 1993-04-16
JP3003324B2 JP3003324B2 (en) 2000-01-24

Family

ID=17293838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3256525A Expired - Fee Related JP3003324B2 (en) 1991-10-02 1991-10-03 Optical receiving module

Country Status (1)

Country Link
JP (1) JP3003324B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2734083A1 (en) * 1995-05-12 1996-11-15 Fujitsu Ltd INTEGRATED OPTICAL MODULE COMPRISING A WAVEGUIDE AND A PHOTO-RECEPTION DEVICE, AND ITS MANUFACTURING METHOD
US6327407B1 (en) 1997-11-07 2001-12-04 Matsushita Electric Industrial Co., Ltd. Semiconductor light-receiving device, method of manufacturing the same, bidirectional optical semiconductor device, and optical transmission system
JP2012129390A (en) * 2010-12-16 2012-07-05 Opnext Japan Inc Semiconductor light-emitting element, and method of manufacturing the same
JP2013500507A (en) * 2009-07-28 2013-01-07 タイコ・エレクトロニクス・コーポレイション Fiber optic interconnect device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2734083A1 (en) * 1995-05-12 1996-11-15 Fujitsu Ltd INTEGRATED OPTICAL MODULE COMPRISING A WAVEGUIDE AND A PHOTO-RECEPTION DEVICE, AND ITS MANUFACTURING METHOD
US6327407B1 (en) 1997-11-07 2001-12-04 Matsushita Electric Industrial Co., Ltd. Semiconductor light-receiving device, method of manufacturing the same, bidirectional optical semiconductor device, and optical transmission system
JP2013500507A (en) * 2009-07-28 2013-01-07 タイコ・エレクトロニクス・コーポレイション Fiber optic interconnect device
JP2012129390A (en) * 2010-12-16 2012-07-05 Opnext Japan Inc Semiconductor light-emitting element, and method of manufacturing the same

Also Published As

Publication number Publication date
JP3003324B2 (en) 2000-01-24

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