JPH0590163A - Thin film forming apparatus - Google Patents
Thin film forming apparatusInfo
- Publication number
- JPH0590163A JPH0590163A JP24878791A JP24878791A JPH0590163A JP H0590163 A JPH0590163 A JP H0590163A JP 24878791 A JP24878791 A JP 24878791A JP 24878791 A JP24878791 A JP 24878791A JP H0590163 A JPH0590163 A JP H0590163A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- reaction
- thin film
- forming apparatus
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体製品や電子部品
等の製造工程における薄膜形成装置に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming apparatus in a manufacturing process of semiconductor products, electronic parts and the like.
【０００２】[0002]
【従来の技術】図４は、従来のロードロック式薄膜形成
装置の要部構成を模式的に表す。2. Description of the Related Art FIG. 4 schematically shows the structure of a main part of a conventional load-lock type thin film forming apparatus.
【０００３】薄膜形成装置にあっては、最近、半導体製
品の製造におけるウエハの大口径化や自動化・無人化に
対応するため、反応室が横型から縦型に移行してきてい
る。In the thin film forming apparatus, recently, the reaction chamber has been changed from the horizontal type to the vertical type in order to cope with the increase in the diameter of the wafer and the automation / unmanned operation in the manufacture of semiconductor products.
【０００４】また、反応室内部でのフレーク削減や気相
静澄前のウエハへの空気中の酸素成分によるウエハの熱
酸化防止のため、ロードロック式が採られることも多
い。In order to reduce flakes in the reaction chamber and prevent thermal oxidation of the wafer due to oxygen components in the air to the wafer before vapor phase clarification, a load lock system is often adopted.
【０００５】薄膜形成装置は、反応室７１と反応室７１
の下側に設けられた被処理体移載室７２とを備えると共
に、移載室７２の側方に設けられたロード・アンロード
室７３を備えている。The thin film forming apparatus includes a reaction chamber 71 and a reaction chamber 71.
And a load / unload chamber 73 provided on the side of the transfer chamber 72.
【０００６】反応室７１の外側には上下方向に長い加熱
部８１が配置され、反応室７１には真空排気手段８２ａ
が接続されており、さらに、反応室７１には反応ガス供
給口８３が開いている。A heating portion 81 which is long in the vertical direction is arranged outside the reaction chamber 71, and the reaction chamber 71 is evacuated to a vacuum exhaust means 82a.
Are connected, and further, a reaction gas supply port 83 is opened in the reaction chamber 71.
【０００７】移載室７２には被処理体載置要ボート８６
及び被処理体載置要ボート８６の昇降機構が配置され、
移載室７２には真空排気手段８２ｂが接続されている。
昇降機構は移載室７２上下方向に軸方向に向けて設置さ
れたネジ部材８７とネジ係合する腕部材８８とを有し、
ボート８６が腕部材８８で支持されており、ネジ部材８
７の回転による腕部材８８の上下動にともない被処理体
載置用ボート８６が反応室８１と移載室８２の間を昇降
するようになっている。The transfer chamber 72 has a boat 86 on which the object to be processed is placed.
And an elevating mechanism for the boat 86 on which the object to be processed is placed,
A vacuum exhaust unit 82b is connected to the transfer chamber 72.
The elevating mechanism has a screw member 87 installed in the vertical direction of the transfer chamber 72 in the axial direction and an arm member 88 screw-engaged.
The boat 86 is supported by the arm member 88, and the screw member 8
As the arm member 88 moves up and down by the rotation of 7, the object-to-be-processed boat 86 moves up and down between the reaction chamber 81 and the transfer chamber 82.
【０００８】ロード・アンロード室７３には、真空排気
手段８２ｃが接続され、室内には被処理体を保持してお
くカセット９０が設けられている。ロード・アンロード
室７３と移載室７２の間にはゲートバルブ９２を介し通
じている。A vacuum evacuation means 82c is connected to the load / unload chamber 73, and a cassette 90 for holding an object to be processed is provided in the chamber. A gate valve 92 is connected between the load / unload chamber 73 and the transfer chamber 72.
【０００９】この薄膜形成装置による処理は以下の通り
である。まず、ゲートバルブ９１を開いて被処理体をカ
セット９０に載せた後ゲートバルブ９１を閉じロード・
アンロード室７３を真空排気しておく。被処理体の移送
タイミングがくると、ゲートバルブ９２を開き、予め真
空排気された移載室７２のボート８６へ被処理体を移載
アーム（図示省略）を使って移し載せる。The processing by this thin film forming apparatus is as follows. First, the gate valve 91 is opened to place the object to be processed on the cassette 90, and then the gate valve 91 is closed to load.
The unload chamber 73 is evacuated. When the timing of transferring the object to be processed comes, the gate valve 92 is opened, and the object to be processed is transferred and mounted on the boat 86 of the transfer chamber 72 that has been evacuated in advance by using a transfer arm (not shown).
【００１０】そして、ネジ部材８７を回転駆動部８９に
より回転させ、ボート８６を加熱手段８１で熱せられた
反応室７１内の所定位置まで上昇させる。ボート８６上
昇後、反応ガス導入口８３から反応ガスを導入し気相反
応させる。気相反応が終わったら、反応ガス導入停止と
真空排気を行っておいてから、ネジ部材８７を回転駆動
部８９により逆回転させ、ボート８６を移載室７２内の
所定位置まで下降させる。Then, the screw member 87 is rotated by the rotation drive unit 89 to raise the boat 86 to a predetermined position in the reaction chamber 71 heated by the heating means 81. After the boat 86 is raised, the reaction gas is introduced from the reaction gas introduction port 83 to cause a gas phase reaction. After the gas phase reaction is completed, the reaction gas introduction is stopped and the vacuum exhaust is performed, and then the screw member 87 is reversely rotated by the rotation drive unit 89 to lower the boat 86 to a predetermined position in the transfer chamber 72.
【００１１】続いて、ゲートバルブ９２を開いて被処理
体をボート８６よりカセット９０に移しゲートバルブ９
２を閉じ、ロード・アンロード室７３を常圧にしたあと
ゲートバルブ９１を開き、処理済みの被処理体をロード
・アンロード室７３から取り出せば、作業は終わりであ
る。Subsequently, the gate valve 92 is opened, the object to be processed is transferred from the boat 86 to the cassette 90, and the gate valve 9 is opened.
2 is closed, the load / unload chamber 73 is set to normal pressure, the gate valve 91 is opened, and the processed object is taken out from the load / unload chamber 73, and the work is completed.
【００１２】[0012]
【発明が解決しようとする課題】しかしながら上記の従
来の構成では、ウエハのロード・アンロード時にロード
・アンロード室に混入する大気を真空排気することによ
り、大気成分（Ｏ２，Ｎ ２，Ｈ２Ｏ等）の吸着を低減す
ることができるため、気相成長前のウエハの熱酸化を減
少させることができる。However, the above-mentioned problems are not solved.
With the conventional configuration, load during wafer loading / unloading
・ By evacuating the air mixed in the unloading chamber
, Atmospheric component (OTwo, N Two, HTwoO)) adsorption is reduced.
Therefore, the thermal oxidation of the wafer before vapor deposition can be reduced.
Can be reduced.
【００１３】[0013]
【実施例】以下本発明の一実施例について、図面を参照
しながら説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【００１４】ず１は本発明の第１の実施例における薄膜
形成装置の概略構造図を示すものである。Reference numeral 1 is a schematic structural diagram of the thin film forming apparatus in the first embodiment of the present invention.
【００１５】図１において、１は反応室、２は移載室、
３はロード・アンロード室、８は加熱手段、１１は加熱
部、１２ａ，１２ｂ，１２ｃは真空排気手段、１３は反
応ガス導入口、２１はボート、２２はネジ部材、２３は
腕部材、２７は回転駆動部、３０はカセット、３３、３
４はゲートバルブである。In FIG. 1, 1 is a reaction chamber, 2 is a transfer chamber,
3 is a load / unload chamber, 8 is a heating means, 11 is a heating part, 12a, 12b and 12c are vacuum exhaust means, 13 is a reaction gas inlet, 21 is a boat, 22 is a screw member, 23 is an arm member, 27 Is a rotary drive unit, 30 is a cassette, 33, 3
4 is a gate valve.
【００１６】以上のように構成された熱処理装置につい
て、以下その動作を説明する。まず、ゲートバルブ３４
を開いて被処理体をカセット３０に載せた後ゲートバル
ブ３４を閉じ加熱手段８により内壁を加熱されたロード
・アンロード室３を真空排気しておく。被処理体の移送
タイミングがくると、ゲートバルブ３３を開き、予め真
空排気された移載室２のボート２１へ被処理体を移載ア
ーム（図示省略）を使って移し載せる。The operation of the heat treatment apparatus configured as described above will be described below. First, the gate valve 34
After opening, the object to be processed is placed on the cassette 30, the gate valve 34 is closed, and the load / unload chamber 3 whose inner wall is heated by the heating means 8 is evacuated. When the transfer timing of the object to be processed comes, the gate valve 33 is opened, and the object to be processed is transferred and mounted on the boat 21 in the transfer chamber 2 which has been evacuated in advance by using a transfer arm (not shown).
【００１７】そして、ネジ部材２２を回転駆動部２７に
より回転させ、ボート２１を加熱部１１で熱せられた反
応室１内の所定位置まで上昇させる。ボート２１上昇
後、反応ガス導入口１３から反応ガスを導入し気相反応
させる。気相反応が終わったら、反応がす導入停止と真
空排気を行っておいてから、ネジ部材２２を回転駆動部
２７により逆回転させ、ボート２１を移載室２内の所定
位置まで下降させる。続いて、ゲートバルブ３３を開い
て被処理体をボート２１よりカセット３０に移しゲート
バルブ３３を閉じ、ロード・アンロード室３を常圧にし
たあとゲートバルブ３４を開き、処理済みの被処理体を
加熱手段８により内壁えお加熱されたロード・アンロー
ド室３から取り出せば、作業は終わりである。Then, the screw member 22 is rotated by the rotation drive unit 27 to raise the boat 21 to a predetermined position in the reaction chamber 1 heated by the heating unit 11. After the boat 21 is raised, the reaction gas is introduced from the reaction gas introduction port 13 to cause a gas phase reaction. After the gas-phase reaction is completed, the reaction is stopped and the evacuation is performed, and then the screw member 22 is reversely rotated by the rotation driving unit 27 to lower the boat 21 to a predetermined position in the transfer chamber 2. Subsequently, the gate valve 33 is opened to transfer the object to be processed from the boat 21 to the cassette 30, the gate valve 33 is closed, the load / unload chamber 3 is set to normal pressure, and then the gate valve 34 is opened to process the object to be processed. The work is finished when the is taken out from the load / unload chamber 3 whose inner wall is heated by the heating means 8.
【００１８】ところで、この薄膜形成装置にはロード・
アンロード室３の内壁及びカセット３０の表面を加熱す
る加熱手段８が設けられている。この加熱手段８は電気
ヒータを用いて８０〜１００℃に加熱している。これに
よりろーど・アンロード室３の内壁及びカセット３０の
表面は乾燥し、さらにウエハのロード・アンロード時に
ロード・アンロード室３に混入する大気成分（Ｏ２，Ｎ
２，Ｈ２Ｏ等）の吸着を低減することができるため、真
空到達度の向上と気相成長前のウエハの熱酸化を減少さ
せることができる。By the way, in this thin film forming apparatus, a load
A heating means 8 for heating the inner wall of the unload chamber 3 and the surface of the cassette 30 is provided. The heating means 8 is heated to 80 to 100 ° C. using an electric heater. As a result, the inner wall of the loading / unloading chamber 3 and the surface of the cassette 30 are dried, and the atmospheric components (O 2 , N mixed in the loading / unloading chamber 3 at the time of loading / unloading the wafer).
(2 , H 2 O, etc.) can be reduced, so that the degree of vacuum achievement can be improved and the thermal oxidation of the wafer before vapor phase growth can be reduced.
【００１９】以下本発明の第２の実施例について図面を
参照しながら説明する。図２は本発明の第２の実施例に
おける熱処理装置の概略構造図を示すものである。図２
において、１は反応室、２は移載室、３はロード・アン
ロード室、８は加熱手段、１１は加熱部、１２ａ，１２
ｂ，１２ｃは真空排気手段１３は反応ガス導入口、２１
はボート、２２はネジ部材、２３は腕部材、２７は回転
駆動部、３０はカセット、３３、３４はゲートバルブ
で、以上は図１の構成と同様なものである。図１の構成
と異なるのは移載室２の内壁を加熱するため、加熱手段
９を設けた点である。A second embodiment of the present invention will be described below with reference to the drawings. FIG. 2 is a schematic structural diagram of a heat treatment apparatus in the second embodiment of the present invention. Figure 2
In FIG. 1, 1 is a reaction chamber, 2 is a transfer chamber, 3 is a load / unload chamber, 8 is heating means, 11 is a heating section, and 12 a and 12 a.
b and 12c are vacuum exhaust means 13 are reaction gas inlets, 21
Is a boat, 22 is a screw member, 23 is an arm member, 27 is a rotary drive unit, 30 is a cassette, and 33 and 34 are gate valves. The above is the same as the configuration of FIG. The difference from the configuration of FIG. 1 is that a heating means 9 is provided to heat the inner wall of the transfer chamber 2.
【００２０】以上のように構成された薄膜形成装置の動
作は第１の実施例と同じであるが、移載室２の内壁もロ
ード・アンロード室３の内壁同様に加熱手段９で８０〜
１００℃に加熱されているため乾燥し、さらにウエハの
移替え時に移載室２に混入する大気成分（Ｏ２，Ｎ２，
Ｈ２Ｏ等）の吸着を低減することができるため、真空到
達度の向上と気相成長前のウエハの熱酸化を減少させる
ことができる。The operation of the thin film forming apparatus constructed as described above is the same as that of the first embodiment, but the inner wall of the transfer chamber 2 is heated by the heating means 9 in the same manner as the inner wall of the load / unload chamber 80.
Since it is heated to 100 ° C., it is dried, and atmospheric components (O 2 , N 2 ,
It is possible to reduce the adsorption such as H 2 O), it can be reduced to improve the vapor-grown thermal oxidation of a wafer before the ultimate vacuum degree.
【００２１】以下本発明の第３の実施例について図面を
参照しながら説明する。図３は本発明の第３の実施例に
おける薄膜形成装置の概略構造図を示すものである。図
３において、１は反応室、１５は真空予備室、１０は加
熱手段、１１は加熱部、１２ａ，１２ｂは真空排気手
段、１３は反応ガス導入口、２１はボート、２２はネジ
部材、２３は腕部材、２７は回転駆動部、５５、５６は
ゲートバルブである。図１の構成と異なるのは移載室と
ロード・アンロード室を一体とした真空予備室１５を設
け、表面を加熱する加熱手段１０が設けた点である。こ
の加熱手段１０は電気ヒータを用いて８０〜１００℃に
加熱している。これにより真空予備室１５の内壁は乾燥
し、さらにウエハのロード・アンロード時に真空予備室
１５に混入する大気成分（Ｏ２，Ｎ２，Ｈ２Ｏ等）の吸
着を低減することができるため、真空到達度の向上と気
相成長前のウエハの熱酸化を減少させることができる。A third embodiment of the present invention will be described below with reference to the drawings. FIG. 3 is a schematic structural diagram of a thin film forming apparatus according to the third embodiment of the present invention. In FIG. 3, 1 is a reaction chamber, 15 is a vacuum reserve chamber, 10 is a heating means, 11 is a heating part, 12a and 12b are vacuum exhaust means, 13 is a reaction gas inlet, 21 is a boat, 22 is a screw member, and 23. Is an arm member, 27 is a rotary drive unit, and 55 and 56 are gate valves. The difference from the configuration of FIG. 1 is that a vacuum preliminary chamber 15 in which a transfer chamber and a load / unload chamber are integrated is provided, and a heating means 10 for heating the surface is provided. This heating means 10 is heated to 80 to 100 ° C. using an electric heater. As a result, the inner wall of the vacuum preliminary chamber 15 is dried, and the adsorption of atmospheric components (O 2 , N 2 , H 2 O, etc.) mixed in the vacuum preliminary chamber 15 at the time of wafer loading / unloading can be reduced. It is possible to improve the degree of vacuum achievement and reduce the thermal oxidation of the wafer before vapor phase growth.
【００２２】以上のように構成された薄膜形成装置につ
いて、以下その動作を説明する。まず、ゲートバルブ５
５を開いて被処理体をボート２１に載せた後ゲートバル
ブ５５を閉じ加熱手段１０により内壁を加熱された真空
予備室１５を真空排気し、所定圧力に到達後、ゲートバ
ルブ５６を開き、ネジ部材２２を回転駆動部２７により
回転させ、ボート２１を加熱部１１で熱せられた反応室
１内の所定位置まで上昇させる。ボート２１上昇後、反
応ガス導入口１３から反応ガスを導入し気相反応させ
る。気相反応が終わったら反応ガス導入停止と真空排気
を行っておいてから、ネジ部材２２を回転駆動部２７に
より逆回転させ、ボート２１を真空に保たれた真空予備
室１５内の所定位置まで下降させる。The operation of the thin film forming apparatus constructed as above will be described below. First, the gate valve 5
5, the object to be processed is placed on the boat 21, the gate valve 55 is closed, the vacuum prechamber 15 whose inner wall is heated by the heating means 10 is evacuated, and after reaching a predetermined pressure, the gate valve 56 is opened and the screw The member 22 is rotated by the rotation driving unit 27 to raise the boat 21 to a predetermined position in the reaction chamber 1 heated by the heating unit 11. After the boat 21 is raised, the reaction gas is introduced from the reaction gas introduction port 13 to cause a gas phase reaction. After the completion of the gas phase reaction, the reaction gas introduction is stopped and the vacuum exhaust is performed, and then the screw member 22 is reversely rotated by the rotation driving unit 27 to bring the boat 21 to a predetermined position in the vacuum preliminary chamber 15 kept in vacuum. Lower it.
【００２３】続いて、ゲートバルブ５６を閉じ、真空予
備室１５を常圧にしたあとゲートバルブ５５を開き、処
理済みの被処理体を加熱手段１０により内壁を加熱され
た真空予備室１５から取り出せば、作業は終わりであ
る。Subsequently, the gate valve 56 is closed, the vacuum preparatory chamber 15 is brought to normal pressure, and then the gate valve 55 is opened to take out the treated object from the vacuum preparatory chamber 15 whose inner wall is heated by the heating means 10. If the work is done.
【００２４】この発明は上記実施例に限らない。加熱手
段はランプであってもよい。The present invention is not limited to the above embodiment. The heating means may be a lamp.
【００２５】[0025]
【発明の効果】以上のように本発明はウエハ移載時に大
気が混入するロード・アンロード室・移載室・真空予備
室内に加熱手段を設けることにより、内壁及びカセット
表面の感想、さらにウエハのロード・アンロード時に混
入する大気成分（Ｏ２，Ｎ２，Ｈ２Ｏ等）の吸着を低減
することができるため、気相成長前のウエハの熱酸化を
減少することができ、その効果は大なるものである。As described above, according to the present invention, by providing the heating means in the load / unload chamber / transfer chamber / vacuum preliminary chamber where the atmosphere is mixed during wafer transfer, the impression of the inner wall and the cassette surface, and further the wafer Since it is possible to reduce the adsorption of atmospheric components (O 2 , N 2 , H 2 O, etc.) that are mixed in during loading and unloading, the thermal oxidation of the wafer before vapor phase growth can be reduced, and its effect Is great.
【図１】本発明の一実施例における薄膜形成装置の構成
図FIG. 1 is a configuration diagram of a thin film forming apparatus according to an embodiment of the present invention.
【図２】本発明の第２実施例における薄膜形成装置の構
成図FIG. 2 is a configuration diagram of a thin film forming apparatus according to a second embodiment of the present invention.
【図３】本発明の第３実施例における薄膜形成装置の構
成図FIG. 3 is a configuration diagram of a thin film forming apparatus according to a third embodiment of the present invention.
【図４】従来の薄膜形成装置の構成図FIG. 4 is a configuration diagram of a conventional thin film forming apparatus.
１ 反応室 ２ 移載室 ３ ロード・アンロード室 ８、９、１０ 加熱手段 １５ 真空予備室 ２１ ボート 1 reaction chamber 2 transfer chamber 3 load / unload chamber 8, 9, 10 heating means 15 vacuum reserve chamber 21 boat
───────────────────────────────────────────────────── フロントページの続き (72)発明者 松下 圭成 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Keisei Matsushita 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.
Claims (3)
上下方向に配置した温度制御可能な加熱体とを備えた反
応室と、基板を保持し前記反応室内部を上下方向に移動
可能な昇降手段とを備えた移載室と、基板の移載手段と
真空排気手段と不活性ガス導入口を有すると共に前記移
載室に対して開閉可能に接続されたロード・アンロード
室から成り、前記ロード・アンロード室内に加熱手段を
設けたことを特徴とする薄膜形成装置。1. A reaction chamber provided with a vacuum evacuation means, a reaction gas introduction port, and a temperature controllable heating member arranged vertically around the reaction chamber, and a substrate that holds the substrate and can move vertically inside the reaction chamber. A transfer chamber provided with an elevating means, a substrate transfer means, a vacuum evacuation means, an inert gas inlet, and a load / unload chamber openably and closably connected to the transfer chamber, A thin film forming apparatus characterized in that a heating means is provided in the load / unload chamber.
上下方向に配置した温度制御可能な加熱体とを備えた反
応室と、基板を保持し前記反応室内部を上下方向に移動
可能な昇降手段とを備えた移載室と、基板の移載手段と
真空排気手段と不活性ガス導入口を有すると共に前記移
載室に対して開閉可能に接続されたロード・アンロード
室から成り、前記移載室及びロード・アンロード室内に
加熱手段を設けたことを特徴とする薄膜形成装置。2. A reaction chamber provided with a vacuum evacuation means, a reaction gas introduction port, and a temperature controllable heating member arranged vertically in the periphery thereof; and a substrate which holds the substrate and is vertically movable inside the reaction chamber. A transfer chamber provided with an elevating means, a substrate transfer means, a vacuum evacuation means, an inert gas inlet, and a load / unload chamber openably and closably connected to the transfer chamber, A thin film forming apparatus, wherein heating means is provided in the transfer chamber and the load / unload chamber.
上下方向に配置した温度制御可能な加熱体とを備えた反
応室と、基板を保持し前記反応室内部を上下方向に移動
可能な昇降手段と真空排気手段と不活性ガス導入口を有
する真空予備室から成り、前記真空予備室内に加熱手段
を設けたことを特徴とする薄膜形成装置。3. A reaction chamber provided with a vacuum evacuation means, a reaction gas introduction port, and a temperature controllable heating member arranged vertically in the periphery thereof; and a substrate which holds the substrate and is vertically movable inside the reaction chamber. A thin film forming apparatus comprising: an elevating means, a vacuum evacuation means, and a vacuum auxiliary chamber having an inert gas inlet, and heating means provided in the vacuum auxiliary chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24878791A JPH0590163A (en) | 1991-09-27 | 1991-09-27 | Thin film forming apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24878791A JPH0590163A (en) | 1991-09-27 | 1991-09-27 | Thin film forming apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0590163A true JPH0590163A (en) | 1993-04-09 |
Family
ID=17183394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24878791A Pending JPH0590163A (en) | 1991-09-27 | 1991-09-27 | Thin film forming apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0590163A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5909994A (en) * | 1996-11-18 | 1999-06-08 | Applied Materials, Inc. | Vertical dual loadlock chamber |
| WO1999053534A1 (en) * | 1998-04-09 | 1999-10-21 | Ohmi, Tadahiro | Process system |
-
1991
- 1991-09-27 JP JP24878791A patent/JPH0590163A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5909994A (en) * | 1996-11-18 | 1999-06-08 | Applied Materials, Inc. | Vertical dual loadlock chamber |
| WO1999053534A1 (en) * | 1998-04-09 | 1999-10-21 | Ohmi, Tadahiro | Process system |
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