JPH05862B2 - - Google Patents

Info

Publication number
JPH05862B2
JPH05862B2 JP63246813A JP24681388A JPH05862B2 JP H05862 B2 JPH05862 B2 JP H05862B2 JP 63246813 A JP63246813 A JP 63246813A JP 24681388 A JP24681388 A JP 24681388A JP H05862 B2 JPH05862 B2 JP H05862B2
Authority
JP
Japan
Prior art keywords
bonding
wire
guide groove
bonded
bonding tool
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63246813A
Other languages
Japanese (ja)
Other versions
JPH0294646A (en
Inventor
Shigekichi Inokoshi
Hisashi Mochida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP63246813A priority Critical patent/JPH0294646A/en
Publication of JPH0294646A publication Critical patent/JPH0294646A/en
Publication of JPH05862B2 publication Critical patent/JPH05862B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05553—Shape in top view being rectangular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48455—Details of wedge bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H01L2224/78314—Shape
    • H01L2224/78315—Shape of the pressing surface, e.g. tip or head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To execute a wire bonding operation of high reliability by a method wherein a gap is formed at least on the upper-face side with reference to a bonding wire guided in a guide groove formed at a tip face. CONSTITUTION:A guide groove 7a formed at a tip face of a bonding tool body 7 is constituted to be an inverted-V shape. That is to say, when a required bonding operation is executed by pressing a bonding wire to a prescribed face to be bonded while the wire is gripped by the guide groove 7a, a cross section of the guide groove 7a is set in such a way that a gap part (an aperture part) exists at the upper-face side in the guide groove 7a as a whole. As a result, even when the required bonding operation is executed continuously and a residual substance of e.g., Al is stuck to the guide groove, the stuck residual substance of Al is removed via the gap part of the guide groove 7a and is not accumulated on a face of the guide groove 7a coming into contact with a wire to be bonded. Thereby, a highly reliable bonding operation which is not damaged by a vibration, a slight shock or the like can be executed.

Description

【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明は、例えば半導体素子に、Al線などを
超音波接続（ボンデイング）する場合等に用いる
楔型のボンデイング用ツールに関する。[Detailed Description of the Invention] [Object of the Invention] (Industrial Field of Application) The present invention relates to a wedge-shaped bonding tool used for ultrasonic bonding (bonding) of Al wire or the like to a semiconductor element, for example. .

（従来の技術） 半導体素子、例えばパワートランジスタペレツ
トに、入出力用のリード線を取りつける方法とし
て、Al線等を超音波振動により、擦りつけて、
接合するワイヤボンデイングが行なわれている。
第６図は上記半導体素子について、ワイヤボンデ
イングを行つて構成した回路部品の一部を、斜視
的に示したもので、１は所要の回路パターン２を
主面上に有する回路基板、２ａは回路パターン２
の所定位置に設けられたボンデイングパツド、３
はパワートランジスターペレツト、４はパワート
ランジスターペレツト３と前記ボンデイングパツ
ド２ａとを電気的に接続するため設けたボンデイ
ングワイヤである。(Prior art) As a method of attaching input/output lead wires to a semiconductor element, such as a power transistor pellet, an aluminum wire or the like is rubbed using ultrasonic vibration.
Wire bonding is used to join the parts.
FIG. 6 is a perspective view of a part of a circuit component constructed by performing wire bonding on the semiconductor element, in which 1 is a circuit board having a required circuit pattern 2 on its main surface, and 2a is a circuit board. pattern 2
a bonding pad provided at a predetermined position, 3
4 is a power transistor pellet, and 4 is a bonding wire provided for electrically connecting the power transistor pellet 3 and the bonding pad 2a.

ところで、この種回路部品の構成に当つての、
ワイヤボンデイングには、第７図ａにて断面的
に、また、ｂにて側面的に各々示すように、先端
面に、ボンデイングワイヤを案内して所定面に押
圧しうる案内溝５ａを備えたボンデイングツール
５を用いている。つまり、第８図にワイヤボンデ
イング状態を模式的に示すように、ボンデイング
ワイヤ４例えばAl線を、パワートランジスタペ
レツト３の所定位置に配置して、このAl線４を
前記ボンデイング用ツール５の溝５ａで覆うよう
に押圧しながら、前記ボンデイング用ツール５
に、所要の超音波振動Ａを与えることによつて、
前記Al線４をパワートランジスタペレツト３の
所定位置に擦りつけて接合している。 By the way, regarding the configuration of this type of circuit component,
For wire bonding, as shown in cross section in FIG. 7a and in side view in FIG. Bonding tool 5 is used. That is, as the wire bonding state is schematically shown in FIG. The bonding tool 5 is pressed while being covered with the bonding tool 5a.
By applying the required ultrasonic vibration A to
The Al wire 4 is rubbed and bonded to a predetermined position of the power transistor pellet 3.

（発明が解決しようとする課題） 上記のように、ボンデイング用ツール５は被ボ
ンデイングワイヤ４を押圧した（加重を加えた）
時、その被ボンデイングワイヤ４を完全に保持出
来るようになつている。つまり、ボンデイング用
ツール５の溝５ａは、前記被ボンデイングワイヤ
４が斜め上方へ引張られた場合を考慮して、両端
側にある程度のＲをもたせている外は、被ボンデ
イングワイヤ４面と全体的に接触するようになつ
ている。例えば被ボンデイングワイヤ４の径が
250μのとき、前記ボンデイングツール５の溝５
ａ中央領域は50〜150μ程度のR′を有するように
設定されている。(Problem to be Solved by the Invention) As described above, the bonding tool 5 presses (applies a weight to) the wire to be bonded 4.
At this time, the wire 4 to be bonded can be completely held. In other words, the groove 5a of the bonding tool 5 has a certain degree of radius on both ends in consideration of the case where the wire to be bonded 4 is pulled diagonally upward. We are starting to come into contact with people. For example, the diameter of the wire 4 to be bonded is
When the diameter is 250μ, the groove 5 of the bonding tool 5
The central region a is set to have an R' of about 50 to 150μ.

しかして、上記ワイヤボンデイングにおいて、
全く異常の無い場合は、第９図に模式的に示すよ
うな形状乃至状態を呈した接続が成される。しか
し、第１０図に模式的に示すように、ボンデイン
グしたAl線４の、そのボンデイング位置に亀裂
４ａ等が生じ破断を招来することがある。つま
り、ボンデイング用ツール５の溝５ａに対接して
た領域の両端部に、亀裂４ａを生じる場合がしば
しばあり、この傾向は、ワイヤボンデイングを連
続的に行う程顕著で、ワイヤボンデイングの信頼
性の上で問題である。この問題を回避するため、
ボンデイング工程において、500〜2000ワイヤボ
ンデイングを行う毎にボンデイング用ツール５を
洗浄したり、交換したりしており作業の煩雑化を
招いている。 However, in the above wire bonding,
If there is no abnormality at all, a connection having the shape or condition as schematically shown in FIG. 9 is made. However, as schematically shown in FIG. 10, cracks 4a or the like may occur in the bonded Al wire 4 at the bonding position, resulting in breakage. In other words, cracks 4a often occur at both ends of the region of the bonding tool 5 that was in contact with the groove 5a, and this tendency becomes more pronounced as wire bonding is performed continuously, and the reliability of wire bonding deteriorates. The above is the problem. To avoid this problem,
In the bonding process, the bonding tool 5 must be cleaned or replaced every time 500 to 2000 wires are bonded, which makes the work complicated.

本発明者らは、上記ボンデイングしたAl線４
における亀裂４ａ発生に就いて検討した結果、ボ
ンデイング用ツール５の案内溝５ａにAlのカス
などが付着、蓄積することに基因することを見出
した。 The present inventors have discovered that the bonded Al wire 4
As a result of investigating the occurrence of the crack 4a in the bonding tool 5, it was found that it is caused by the adhesion and accumulation of Al scum etc. in the guide groove 5a of the bonding tool 5.

［発明の構成］ （課題を解決するための手段） 本発明は、上記事情に基づいてなされたもの
で、前記ボンデイング用ツールにおいて、先端面
に設けられた案内溝は、案内する被ボンデイング
ワイヤに対して、少なくとも上面側に間隙を有す
るように形成してあることを特徴とする。[Structure of the Invention] (Means for Solving the Problems) The present invention has been made based on the above-mentioned circumstances, and in the bonding tool, the guide groove provided on the tip surface is configured to guide the wire to be bonded. On the other hand, it is characterized in that it is formed to have a gap at least on the upper surface side.

（作用） 本発明に係わるワイヤボンデイング用ツール
は、被ボンデイングワイヤを挟持した形で、所定
面に押圧し得る案内溝に、その案内溝に沿つて遊
び部が予め設けてある。つまり、被ボンデイング
ワイヤを挟持した際に、前記案内溝の内壁面は全
体的に被ボンデイングワイヤと接触しない様に、
少なくとも上面側に貫通する空隙部を有するよう
に形成されている。このため、所要のワイヤボン
デイングを連続的に行い、例えばAlカスが案内
溝に付着した場合なども、その付着したAlカス
は前記案内溝の間隙部を介して除かれ、被ボンデ
イングワイヤと接触する案内溝面に蓄積すること
はない。従つて上記の様な、ボンデイングワイヤ
の破断等の原因となるボンデイング部における亀
裂発生なども全面的になくなり、信頼性の高いワ
イヤボンデイングの形成、維持が可能となる。(Function) The wire bonding tool according to the present invention has a guide groove that can be pressed against a predetermined surface while holding the wire to be bonded, and has a play portion provided in advance along the guide groove. In other words, when the wire to be bonded is held, the inner wall surface of the guide groove is made so that the entire inner wall surface does not come into contact with the wire to be bonded.
It is formed to have a cavity passing through it at least on the upper surface side. Therefore, even if the required wire bonding is performed continuously and, for example, Al scum adheres to the guide groove, the adhering Al scum is removed through the gap in the guide groove and comes into contact with the wire to be bonded. It will not accumulate on the guide groove surface. Therefore, the occurrence of cracks in the bonding portion, which may cause breakage of the bonding wire, as described above, is completely eliminated, making it possible to form and maintain highly reliable wire bonding.

（実施例） 以下第１図ａ，ｂ乃至第５図を参照して、本発
明の実施例を説明する。(Example) An example of the present invention will be described below with reference to FIGS. 1a, b to 5.

第１図ａは本発明のボンデイング用ツールの一
例を縦断面的に、また第１図ｂは側面を、各々示
したもので、ボンデイングツール本体７の先端面
に形成された案内溝７ａは、その両端側は被ボン
デイングワイヤが、上方へ引張られた場合を考慮
して、適度のＲを付けて広大化させながら、逆Ｖ
字型に設けた構成を成している。つまり、被ボン
デイングワイヤを、前記案内溝７ａにて挟持した
形で、ボンデイングすべき所定面に押圧し、所要
のワイヤボンデイングを行うとき、前記案内溝７
ａには全体的に上面側に間隙部（空隙部）が存在
するように前記案内溝７ａの断面は設定されてい
る。勿論、ここで案内溝７ａの深さや幅等は、適
用するボンデイングワイヤの太さ、種類などによ
つて適宜設定される。 FIG. 1a shows an example of the bonding tool of the present invention in longitudinal section, and FIG. In consideration of the case where the wire to be bonded is pulled upward, the both ends are widened with an appropriate radius, and an inverted V
It has a letter-shaped configuration. That is, when the wire to be bonded is held between the guide grooves 7a and pressed against a predetermined surface to be bonded to perform the required wire bonding, the guide grooves 7a
The cross section of the guide groove 7a is set so that a gap (void) exists on the entire upper surface side of the guide groove 7a. Of course, the depth, width, etc. of the guide groove 7a are appropriately set depending on the thickness, type, etc. of the bonding wire to be applied.

次ぎに上記構成のボンデイング用ツールの使用
例を説明する。このボンデイング用ツールの使用
法は基本的には従来の場合と変りない。つまり、
被ボンデイングワイヤを所要の位置に案内し、前
記ボンデイング用ツール本体７先端面の案内溝７
ａにて挟持する形で、押圧しながら、前記ボンデ
イング用ツール本体７に所要の超音波振動を加
え、連続的に擦ることによつて所望の接合（ボン
デイング）が達成される。第２図は上記ワイヤボ
ンデイングの状態を模式的に示した断面図で、ボ
ンデイングワイヤ、例えばAl線４は、断面形状
を崩しながら所定面に接合化する一方、ボンデイ
ング用ツール本体７の案内溝７ａの壁面との間に
間隙部乃至空隙部８が残されている。即ち、上記
ワイヤボンデイングにおいて、被ボンデイングワ
イヤであるAl線４から、Alカスが案内溝７ａ面
に付着しても、そのAlカスは前記空隙部８に順
次移動し、被ボンデイングワイヤであるAl線４
に接する面から容易に除去される。従つて、従来
往々起生していた、ボンデイング部における亀裂
発生もなくなり、振動や軽い衝撃等によつて破断
されることのない信頼性の高い接合（ボンデイン
グ）をなしうる。 Next, an example of use of the bonding tool having the above configuration will be explained. The method of using this bonding tool is basically the same as in the conventional case. In other words,
The wire to be bonded is guided to a required position by the guide groove 7 on the tip surface of the bonding tool body 7.
Desired bonding is achieved by applying the required ultrasonic vibration to the bonding tool main body 7 while pressing it while holding it at the point a and continuously rubbing it. FIG. 2 is a cross-sectional view schematically showing the state of the wire bonding, in which the bonding wire, for example, the Al wire 4, is bonded to a predetermined surface while breaking the cross-sectional shape, while the guide groove 7a of the bonding tool body 7 A gap portion or void portion 8 is left between the wall surface and the wall surface. That is, in the above wire bonding, even if Al scum adheres to the surface of the guide groove 7a from the Al wire 4, which is the wire to be bonded, the Al scum sequentially moves to the void 8, and the Al wire 4, which is the wire to be bonded, moves to the gap 8. 4
easily removed from the surface in contact with the Therefore, the occurrence of cracks in the bonding portion, which has often occurred in the past, is eliminated, and a highly reliable bonding that will not break due to vibrations, light impacts, etc. can be achieved.

なお、上記においては、ボンデイング用ツール
本体７の先端面に設けた案内溝７ａは断面逆字Ｖ
型としたが、案内溝７ａの断面は、例えば第３図
または第４図に示すような形状にしてもよい。つ
まり、前記断面逆字Ｖ型溝の最深部を鋭角のまま
残さず、適宜広大化しておいてもよい。 In the above, the guide groove 7a provided on the tip surface of the bonding tool body 7 has an inverted cross-section V.
Although a mold is used, the cross section of the guide groove 7a may be shaped as shown in FIG. 3 or FIG. 4, for example. That is, the deepest part of the V-shaped groove with an inverted cross section may not remain at an acute angle, but may be enlarged as appropriate.

また、上記ではボンデイングワイヤとして、
Al線を用いた例を示したが、Cu線やAg線の場合
に適用しても、同様の作用、効果が得られる。 In addition, in the above, as a bonding wire,
Although an example using Al wire has been shown, similar actions and effects can be obtained even if applied to Cu wire or Ag wire.

［発明の効果］ 上記本発明のワイヤボンデイング用ツールによ
れば、所要のワイヤボンデイングを連続的に行つ
た場合でも、ボンデイングしたワイヤが破断した
り、離脱したりする恐れのないボンデイングを常
時達成しうる。例えば、本発明に係わるボンデイ
ング用ツール（実施例）及び従来のボンデイング
用ツール（比較例）を用い、それらボンデテイン
グ用ツールに加える超音波振動パワー、超音波振
動印加時間、押圧力（荷重）のボンデイング条件
を一定にし、径250μのAl線とパワートランジス
タペレツトとのボンデイングに、各々連続的に適
用して得た接合部の強度を比較したところ第５図
に示す如くであつた。第５図から分るように従来
のボンデイング用ツールを用いた場合には、ボン
デイングした部分の接合強度が連続的に低下して
いるのに対して、本発明のボンデイング用ツール
を用いた場合には、接合用度の低下は極く僅か
で、2000ワイヤボンデイング時点での接合強度
は、約２倍の値を保持していた。しかして、半導
体装置等が、高い信頼性を要求されながら、広く
実用に供されつつある点からも、上記ボンデイン
グについての高い信頼性は実用上多くの利点をも
たらすものと言える。例えば、信頼性の点から、
半導体装置におけるボンデイングワイヤの接合強
度が200ｇ以上とした場合、本発明のボンデイン
グ用ツールを用いると、交換頻度は約1/10程度で
よいことになり、作業上の繁雑さも大幅に低減す
る。[Effects of the Invention] According to the wire bonding tool of the present invention, even when the required wire bonding is performed continuously, bonding can be always achieved without the risk of the bonded wire breaking or coming off. sell. For example, using a bonding tool according to the present invention (example) and a conventional bonding tool (comparative example), the ultrasonic vibration power, ultrasonic vibration application time, and pressing force (load) applied to the bonding tool may be adjusted. A comparison was made of the strength of the joints obtained by successively bonding an Al wire with a diameter of 250 .mu.m with a power transistor pellet under constant bonding conditions, and the results were as shown in FIG. As can be seen from FIG. 5, when the conventional bonding tool was used, the bonding strength of the bonded part decreased continuously, whereas when the bonding tool of the present invention was used, the bonding strength decreased continuously. There was only a slight decrease in the strength of bonding, and the bonding strength at the time of 2000 wire bonding was approximately twice as high. However, since semiconductor devices and the like are being widely put into practical use while requiring high reliability, it can be said that the high reliability of the bonding described above brings many practical advantages. For example, in terms of reliability,
When the bonding strength of the bonding wire in a semiconductor device is 200 g or more, if the bonding tool of the present invention is used, the frequency of replacement will be about 1/10, and the complexity of the work will be significantly reduced.

【図面の簡単な説明】[Brief explanation of drawings]

第１図ａは本発明のボンデイング用ツールの一
構成例の要部を示す縦断面図、第１図ｂは第１図
ａに示すボンデイング用ツールの側面図、第２図
は第１図ａ，ｂで示したボンデイング用ツールを
用いてボンデイングする状態を模式的に示す縦断
面図、第３図及び第４図は本発明のボンデイング
用ツールの他の異なる構成例の要部を示す側面
図、第５図は本発明のボンデイング用ツール及び
従来のボンデイング用ツールを各々用いてAl線
を連続的にワイヤボンデイングした場合における
接合強度を比較して示す曲線図、第６図は回路基
板に半導体素子を装着しワイヤボンデイングして
成る回路部品の一部を示す斜視図、第７図ａは従
来のボンデイング用ツールの要部構成を示す縦断
面図、第７図ｂは第７図ａに示したボンデイング
用ツールの側面図、第８図は第７図ａ，ｂに示し
たボンデイング用ツールを用いてワイヤボンデイ
ングする状態を模式的に示す側面図、第９図は正
常なボンデイング状態を模式的に示す側面図、第
１０図は異常なボンデイング状態を模式的に示す
側面図である。 ７……ボンデイング用ツール本体、７ａ……案
内溝、８……案内溝に残る間隙部（空隙部）。 FIG. 1a is a longitudinal cross-sectional view showing a main part of a configuration example of a bonding tool of the present invention, FIG. 1b is a side view of the bonding tool shown in FIG. 1a, and FIG. 2 is a side view of the bonding tool shown in FIG. 1a. , b is a vertical cross-sectional view schematically showing a bonding state using the bonding tool shown in FIG. , FIG. 5 is a curve diagram showing a comparison of the bonding strength when Al wire is wire bonded continuously using the bonding tool of the present invention and the conventional bonding tool, respectively. FIG. A perspective view showing a part of a circuit component formed by mounting an element and wire bonding, FIG. 7a is a longitudinal cross-sectional view showing the main part configuration of a conventional bonding tool, and FIG. 7b is shown in FIG. 7a. FIG. 8 is a side view schematically showing a state in which wire bonding is performed using the bonding tool shown in FIGS. 7a and b, and FIG. 9 is a side view schematically showing a normal bonding state. FIG. 10 is a side view schematically showing an abnormal bonding state. 7... Bonding tool body, 7a... Guide groove, 8... Gap portion (void portion) remaining in the guide groove.

Claims (1)

【特許請求の範囲】 １ 先端面に、被ボンデイングワイヤを案内して
所定面に押圧し得る案内溝を備えて成るボンデイ
ング用ツールにおいて、 前記案内溝は、案内するボンデイングワイヤに
対して少なくとも上面側に間隙が残るように形成
されていることを特徴とするボンデイング用ツー
ル。[Scope of Claims] 1. A bonding tool comprising a guide groove on a distal end surface that can guide a wire to be bonded and press it against a predetermined surface, wherein the guide groove is at least on the upper surface side with respect to the bonding wire to be guided. A bonding tool characterized by being formed so that a gap remains between the bonding tools.
JP63246813A 1988-09-30 1988-09-30 Tool for bonding Granted JPH0294646A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63246813A JPH0294646A (en) 1988-09-30 1988-09-30 Tool for bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63246813A JPH0294646A (en) 1988-09-30 1988-09-30 Tool for bonding

Publications (2)

Publication Number Publication Date
JPH0294646A JPH0294646A (en) 1990-04-05
JPH05862B2 true JPH05862B2 (en) 1993-01-06

Family

ID=17154070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63246813A Granted JPH0294646A (en) 1988-09-30 1988-09-30 Tool for bonding

Country Status (1)

Country Link
JP (1) JPH0294646A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013112205A2 (en) * 2011-09-20 2013-08-01 Orthodyne Electronics Corporation Wire bonding tool
CN103219255A (en) * 2013-03-15 2013-07-24 李尚哲 Ultrasonic welding chopper with multiple bonding wire grooves

Also Published As

Publication number Publication date
JPH0294646A (en) 1990-04-05

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