JPH0585856B2 - - Google Patents
Info
- Publication number
- JPH0585856B2 JPH0585856B2 JP60295813A JP29581385A JPH0585856B2 JP H0585856 B2 JPH0585856 B2 JP H0585856B2 JP 60295813 A JP60295813 A JP 60295813A JP 29581385 A JP29581385 A JP 29581385A JP H0585856 B2 JPH0585856 B2 JP H0585856B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- metal
- single crystal
- semiconductor
- bonded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910003460 diamond Inorganic materials 0.000 claims description 47
- 239000010432 diamond Substances 0.000 claims description 47
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000013078 crystal Substances 0.000 claims description 21
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 16
- 229910052737 gold Inorganic materials 0.000 claims description 16
- 239000010931 gold Substances 0.000 claims description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 238000005219 brazing Methods 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Measuring Fluid Pressure (AREA)
- Die Bonding (AREA)
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はダイヤモンド体を金属体に接合する接
合構造に関し、特にダイヤモンド半導体の歪ゲー
ジにより構成した圧力検出器に使用して好適な接
合構造に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a bonding structure for bonding a diamond body to a metal body, and particularly relates to a bonding structure suitable for use in a pressure detector constructed of a diamond semiconductor strain gauge. .
［従来の技術］
半導体としては従来Siの半導体が多用されてい
る。ところで、Siはそのバンドギヤツプが約
1.1eVと小さいため、使用雰囲気が約150℃を越
えると半導体特性が消失してしまう。一方、ダイ
ヤモンドは上記Siに比してそのバンドギヤツプは
約5.5eVと非常に大きく、これを半導体として使
用すれば高い雰囲気温度に耐え得ることが予想さ
れる。[Prior Art] Conventionally, Si semiconductors have been widely used as semiconductors. By the way, the band gap of Si is about
Because it is as small as 1.1eV, its semiconductor properties will be lost if the operating atmosphere exceeds approximately 150°C. On the other hand, diamond has a much larger band gap of about 5.5 eV than the above-mentioned Si, and if diamond is used as a semiconductor, it is expected that it will be able to withstand high ambient temperatures.
また、ダイヤモンドの単結晶体は電気絶縁性に
優れるとともに、熱伝導率が極めて大きく、半導
体基板として優れた性能を発揮することが期待で
きる。 In addition, single crystal diamond has excellent electrical insulation properties and extremely high thermal conductivity, so it can be expected to exhibit excellent performance as a semiconductor substrate.
［発明が解決しようとする問題点］
ところで上記ダイヤモンドの半導体素子を実装
する際の問題点として、これと金属体との接合が
問題となる。というのは、ダイヤモンドの熱膨脹
率は約2.3×10-6／℃と非常に小さく、これと例
えばステンレス（熱膨脹率約15×10-6／℃（100
℃））等の他の金属との接合は、これらの熱膨脹
率の差が過大であるため雰囲気温度の変化により
接合部に破損を生じるおそれがある。[Problems to be Solved by the Invention] By the way, one of the problems when mounting the above-mentioned diamond semiconductor element is the bonding between it and a metal body. This is because the coefficient of thermal expansion of diamond is extremely small at approximately 2.3 × 10 -6 /℃, and this is compared to, for example, stainless steel (which has a coefficient of thermal expansion of approximately 15 × 10 -6 /℃ (100
When bonding with other metals such as .degree. C.), there is a risk of damage to the bonded portion due to changes in ambient temperature since the difference in coefficient of thermal expansion is excessive.
本発明はかかる問題点に鑑み、ダイヤモンド体
と他の金属体を雰囲気温度の変化に無関係に確実
かつ容易に接合できる接合構造を提供することを
目的とする。 SUMMARY OF THE INVENTION In view of these problems, it is an object of the present invention to provide a bonding structure that can reliably and easily bond a diamond body and another metal body regardless of changes in ambient temperature.
［問題点を解決するための手段］
本発明の構成を第１図により説明すると、ダイ
ヤモンド単結晶体４７の上面にはダイヤモンド半
導体４８が形成され、上記単結晶体４７は少なく
ともチタン６１、金６３の各金属膜を介して他の
金属体３１に接合してある。また、上記半導体４
８は少なくともチタン６１、金６３の各金属膜を
介して他の金属体５２Ｂ，５２Ｃに接合してあ
る。[Means for Solving the Problems] The structure of the present invention will be described with reference to FIG. It is joined to another metal body 31 via each metal film. In addition, the semiconductor 4
8 is bonded to other metal bodies 52B and 52C via at least metal films of titanium 61 and gold 63.
［作用、効果］
上記構造において、チタン６１、金６３の熱膨
脹率はそれぞれ8.8×10-6／℃，9.1×10-6／℃、，
14.2×10-6／℃（100℃において）であり、ダイ
ヤモンド単結晶体４７ないしダイヤモンド半導体
４８の側より順次熱膨脹率を大きくして、他の金
属体３１，５２Ｂ，５２Ｃ（これらの熱膨脹率は
通常約1.5×10-6／℃（100℃）である）に接合し
てある。これにより、ダイヤモンド体４７，４
８、各金属膜６１，６３および金属体３１，５２
Ｂ，５２Ｃ間の熱膨脹率の差は小さいものとな
り、雰囲気温度が大きく変化しても接合部に破損
を生じることはない。[Function, Effect] In the above structure, the thermal expansion coefficients of titanium 61 and gold 63 are 8.8×10 -6 /℃ and 9.1×10 -6 /℃, respectively.
14.2×10 -6 /°C (at 100°C), and the coefficient of thermal expansion is increased sequentially from the side of the diamond single crystal 47 or the diamond semiconductor 48, and the coefficient of thermal expansion of the other metal bodies 31, 52B, 52C is The temperature is usually about 1.5×10 -6 /℃ (100℃). As a result, the diamond bodies 47, 4
8. Each metal film 61, 63 and metal body 31, 52
The difference in coefficient of thermal expansion between B and 52C is small, and the joint will not be damaged even if the ambient temperature changes greatly.
［実施例］
以下、本発明の接合構造を圧力検出器の半導体
歪ゲージに利用した例を説明する。[Example] Hereinafter, an example in which the bonding structure of the present invention is used in a semiconductor strain gauge of a pressure detector will be described.
第４図において、圧力検出器の筒状ハウジング
１には小径の下端部１１外周に取付用ネジ部１１
ａが形成され、中間部１２外周はねじ込み用六角
面としてある。上記ハウジング１の上端開口には
コネクタ２がかしめ固定してある。ハウジング１
の下端部１１内にはセンシングボデー３が設けて
ある。センシングボデー３は圧力室Ｐを形成する
一端閉鎖のステンレス製筒体であり、閉鎖端の大
径フランジ部３１をハウジング１の内周段付面に
当接せしめ、その開口をハウジング１の下端に位
置せしめてある。 In FIG. 4, the cylindrical housing 1 of the pressure sensor has a mounting screw portion 11 on the outer periphery of the lower end portion 11 with a small diameter.
a is formed, and the outer periphery of the intermediate portion 12 is a hexagonal surface for screwing. A connector 2 is fixed to the upper opening of the housing 1 by caulking. Housing 1
A sensing body 3 is provided within the lower end portion 11 of. The sensing body 3 is a cylindrical body made of stainless steel with one end closed and forms a pressure chamber P. The large diameter flange 31 at the closed end is brought into contact with the inner peripheral stepped surface of the housing 1, and its opening is connected to the lower end of the housing 1. It is located.
センシングボデー３のフランジ部３１中心は薄
肉となしてダイヤフラム３１１としてある。そし
て、該ダイヤフラム３１１の上面に構造を後述す
る半導体歪ゲージ４が設けてある。フランジ部３
１外周にはセラミツク基板５が設けてあり、該基
板５には上面に導電性ペーストを印刷焼成して信
号取出し電極（図略）を形成するとともに、取出
し電極に導通する金属ポスト５１が立設してあ
る。そして、上記半導体歪ゲージ４と上記基板５
の取出し電極をワイヤ５２で接続し、金属ポスト
５１はリード線５３により上記コネクタ２のピン
２１に接続してある。 The center of the flange portion 31 of the sensing body 3 is made thin and serves as a diaphragm 311. A semiconductor strain gauge 4 whose structure will be described later is provided on the upper surface of the diaphragm 311. Flange part 3
1. A ceramic substrate 5 is provided on the outer periphery of the substrate 5, and a conductive paste is printed and fired on the upper surface of the substrate 5 to form a signal extraction electrode (not shown), and a metal post 51 that is electrically connected to the extraction electrode is erected. It has been done. The semiconductor strain gauge 4 and the substrate 5
The metal post 51 is connected to the pin 21 of the connector 2 through a lead wire 53.
歪ゲージ４は、第２図に示す如く、単一の矩形
ダイヤモンド単結晶板４７上に４つの歪ゲージ４
Ａ，４Ｂ，４Ｃ，４Ｄを形成してなる。各歪ゲー
ジ４Ａ〜４Ｄは蛇行する線状のダイヤモンド半導
体膜４８より成り、矩形面状電極４１，４２，４
３，４４を介して順次互いに接続されている。上
記各電極４１〜４４にはそれぞれワイヤ５２Ａ，
５２Ｂ，５２Ｃ，５２Ｄの一端が接続され、結局
上記歪ゲージ４Ａ〜４Ｄは、第３図に示す如きブ
リツジ回路を構成している。 As shown in FIG.
A, 4B, 4C, and 4D are formed. Each strain gauge 4A to 4D is made of a meandering linear diamond semiconductor film 48, and has rectangular planar electrodes 41, 42, 4
They are sequentially connected to each other via 3 and 44. Each of the electrodes 41 to 44 has a wire 52A,
One ends of the strain gauges 52B, 52C, and 52D are connected, and the strain gauges 4A to 4D thus constitute a bridge circuit as shown in FIG.
上記ダイヤモンド単結晶板４７は、第１図に示
す如く、センシングボデー３のフランジ部３１の
中心部上面に位置しており、上記単結晶板４７の
下面全面にこれに接する側より順次チタン６１、
白金６２、金６３の各金属膜が積層形成されて、
上記金膜６３をろう材４９により上記フランジ部
３１に接合してある。この状態で上記歪ゲージ４
Ａ〜４Ｄのうち上記歪ゲージ４Ａ，４Ｂがダイヤ
フラム３１１の直上に位置している（第２図）。 As shown in FIG. 1, the diamond single-crystal plate 47 is located on the upper surface of the center of the flange portion 31 of the sensing body 3, and the diamond single-crystal plate 47 is covered with titanium 61, titanium 61,
Metal films of platinum 62 and gold 63 are laminated,
The gold film 63 is bonded to the flange portion 31 with a brazing material 49. In this state, the strain gauge 4
Among the strain gauges A to 4D, the strain gauges 4A and 4B are located directly above the diaphragm 311 (FIG. 2).
ダイヤモンド単結晶板４７上に形成された上記
ダイヤモンド半導体膜４８は、不純物としてボロ
ン（Ｂ）を含むＰ型半導体膜である。これら半導
体膜４８上に形成された上記各電極４１〜４４
は、半導体膜４８に接する側より順次チタン６
１、白金６２、金６３の各金属膜を積層して構成
してある。 The diamond semiconductor film 48 formed on the diamond single crystal plate 47 is a P-type semiconductor film containing boron (B) as an impurity. Each of the electrodes 41 to 44 formed on these semiconductor films 48
titanium 6 in order from the side in contact with the semiconductor film 48
It is constructed by laminating metal films of 1, platinum 62, and gold 63.
上記歪ゲージ４は以下の如く製作する。すなわ
ち、半導体膜４８形成部以外をマスキングしてダ
イヤモンド単結晶板４７をマイクロ波CVD装置
内に置き、これにメタン（CH4）、水素、および
少量（0.1〜100ppm）のジボラン（B2H6）の混
合ガスを供給する。混合ガスはマイクロ波（本実
施例では2450MHz）により分解励起されてプラズ
マとなり、上記単結晶板４７上にボロンを含むダ
イヤモンド半導体膜４８として析出成長せしめら
れる。その後、半導体膜４８の上面および単結晶
板４７の下面に、蒸着ないしスパツタにより上記
各金属膜６１〜６３を順次形成する。なお、上記
各ワイヤ５２Ａ〜５２Ｄはワイヤボンデイング等
により各電極４１〜４４の金膜６３に容易に接続
できる。上記ワイヤ５２Ａ〜５２Ｄは金製であ
る。 The strain gauge 4 is manufactured as follows. That is, the diamond single crystal plate 47 is placed in a microwave CVD apparatus with the area other than the area where the semiconductor film 48 is formed masked, and methane (CH 4 ), hydrogen, and a small amount (0.1 to 100 ppm) of diborane (B 2 H 6 ) is supplied. The mixed gas is decomposed and excited by microwaves (2450 MHz in this embodiment) to become plasma, which is deposited and grown on the single crystal plate 47 as a diamond semiconductor film 48 containing boron. Thereafter, the metal films 61 to 63 are sequentially formed on the upper surface of the semiconductor film 48 and the lower surface of the single crystal plate 47 by vapor deposition or sputtering. Note that each of the wires 52A to 52D can be easily connected to the gold film 63 of each electrode 41 to 44 by wire bonding or the like. The wires 52A to 52D are made of gold.
上記構造になる圧力検出器はハウジング１のネ
ジ部１ａによりエンジン気筒壁に取り付けられ
る。気筒圧力はセンシングボデー３の筒内へ導入
されてそのダイヤフラム３１１に印加される。ダ
イヤフラム３１１は印加される圧力に応じて変形
し、その直上に位置する歪ゲージ４Ａ，４Ｂは歪
を生じてその抵抗値が大きく変化する。この時、
他の歪ゲージ４Ｃ，４Ｄは、上記ダイヤフラム３
１より離れた位置に形成されていることにより歪
を生じず、その抵抗値は変化しない。しかして、
第３図の端子Ｔ１，Ｔ２間に電源を供給すると、
端子Ｔ３，Ｔ４間に上記変形量に応じた、すなわ
ち気筒圧力に応じた圧力信号が得られる。 The pressure sensor having the above structure is attached to the engine cylinder wall by the threaded portion 1a of the housing 1. Cylinder pressure is introduced into the cylinder of the sensing body 3 and applied to its diaphragm 311 . The diaphragm 311 deforms in response to the applied pressure, and the strain gauges 4A and 4B located directly above the diaphragm 311 are strained and their resistance values change greatly. At this time,
The other strain gauges 4C and 4D are connected to the diaphragm 3
Since it is formed at a position distant from 1, no distortion occurs and its resistance value does not change. However,
When power is supplied between terminals T1 and T2 in Fig. 3,
A pressure signal corresponding to the amount of deformation, that is, the cylinder pressure, is obtained between terminals T3 and T4.
かかる圧力検出器は約500℃の高温雰囲気でも
正常に作動する。これは従来半導体歪ゲージに使
用されていたSiのバンドギヤツプが約1.1eVであ
るのに対して、ダイヤモンドのそれは約5.5eVと
非常に大きく、高温でも半導体特性を失わないこ
とによる。 Such a pressure detector operates normally even in a high temperature atmosphere of approximately 500°C. This is because the band gap of Si, which is conventionally used in semiconductor strain gauges, is approximately 1.1 eV, whereas that of diamond is much larger at approximately 5.5 eV, and it does not lose its semiconductor properties even at high temperatures.
ところで、ダイヤモンドの熱膨脹率は約2.3×
10-6／℃（100℃）と極めて小さく、温度変化の
大きい雰囲気中では歪ゲージを構成するダイヤモ
ンド単結晶板４７およびダイヤモンド半導体膜４
８と他の金属との接合が問題となる。ここにおい
て、上記歪ゲージにおいては、単結晶板４７およ
び半導体膜４８へのメタライズをこれらの側より
順次熱膨脹率が大きくなるチタン、白金、金の三
層で行なつて熱膨脹の整合性を維持し、これより
例えばエンジン始動時等の急加熱による歪ゲージ
の破壊を防止している。ちなみに、チタン、白
金、金の熱膨脹率はそれぞれ8.8×10-6／℃，9.1
×10-6／℃，14.2×10-6／℃（100℃）である。 By the way, the coefficient of thermal expansion of diamond is approximately 2.3×
10 -6 /℃ (100℃) is extremely small, and in an atmosphere with large temperature changes, the diamond single crystal plate 47 and the diamond semiconductor film 4 that constitute the strain gauge
8 and other metals becomes a problem. Here, in the strain gauge described above, the single crystal plate 47 and the semiconductor film 48 are metallized using three layers of titanium, platinum, and gold whose coefficients of thermal expansion increase sequentially from these sides to maintain consistency in thermal expansion. This prevents the strain gauge from being destroyed due to sudden heating, for example when starting the engine. By the way, the thermal expansion coefficients of titanium, platinum, and gold are 8.8×10 -6 /℃ and 9.1, respectively.
×10 -6 /℃, 14.2 ×10 -6 /℃ (100℃).
またステンレスの熱膨脹率は約15×10-6／℃
（100℃）であり、これは金属一般の熱膨脹率を代
表している。 Also, the coefficient of thermal expansion of stainless steel is approximately 15×10 -6 /℃
(100℃), which is representative of the coefficient of thermal expansion of metals in general.
上記ダイヤモンド単結晶板４７をダイヤフラム
として使用することもできる。これを第５図、第
６図に示す。第６図において、センシングボデー
３のフランジ部３１中心には開口３１ａが形成し
てあり、これに上記構造の歪ゲージ４が覆着して
ある。すなわち、第５図において、開口３１ａの
周縁に対向する単結晶板４７の下面には、これに
接する側より順次チタン６１、白金６２、金６３
の各金属膜が形成してあり、金膜６３をろう材４
９により上記開口３１ａ周縁に接合してある。し
かして、測定圧が導入されると、その圧力に応じ
てダイヤモンド単結晶板４７が変形するのであ
る。 The diamond single crystal plate 47 can also be used as a diaphragm. This is shown in FIGS. 5 and 6. In FIG. 6, an opening 31a is formed at the center of the flange portion 31 of the sensing body 3, and the strain gauge 4 having the above structure is covered with the opening 31a. That is, in FIG. 5, titanium 61, platinum 62, and gold 63 are sequentially deposited on the lower surface of the single crystal plate 47 facing the periphery of the opening 31a from the side in contact with the lower surface of the single crystal plate 47.
Each metal film is formed, and the gold film 63 is used as the brazing material 4.
9 is joined to the periphery of the opening 31a. Thus, when a measurement pressure is introduced, the diamond single crystal plate 47 deforms in accordance with the pressure.
かかる構造としても上記実施例と同様の効果が
ある。 Such a structure also has the same effect as the above embodiment.
なお、上記三層の金属膜は、圧力検出器を比較
的低温（約400℃）で使用する場合には白金膜を
省略することができる。また、電極は必ずしも三
層構造とする必要はなく、チタン膜のみでも良い
が、ワイヤの接続を容易に行なう為には最外層を
金膜とした上記三層構造が優れている。 Note that, in the three-layer metal film described above, the platinum film can be omitted when the pressure detector is used at a relatively low temperature (approximately 400° C.). Further, the electrode does not necessarily have to have a three-layer structure, and only a titanium film may be used, but the above-mentioned three-layer structure with a gold film as the outermost layer is preferable in order to easily connect wires.
上記各実施例におけるダイヤモンド半導体膜４
８としては、ダイヤモンドに例えばリン（Ｐ）を
ドープしてｎ型半導体としたものでも良い。 Diamond semiconductor film 4 in each of the above embodiments
8 may be made by doping diamond with, for example, phosphorus (P) to make it an n-type semiconductor.
また、チタン、白金、金の金属膜は、各金属粉
末をテルピオネール等の溶剤と混合してペースト
となし、これをパターン印刷した後、水素、窒
素、あるいは水蒸気雰囲気中で焼成する方法、ま
たは溶射等の方法によつても形成できる。 Metal films of titanium, platinum, and gold can be produced by mixing each metal powder with a solvent such as terpionelle to form a paste, printing a pattern on the paste, and then firing it in a hydrogen, nitrogen, or water vapor atmosphere. It can also be formed by a method such as thermal spraying.
以上の如く、本発明の接合構造によれば、ダイ
ヤモンド体と他の金属を容易かつ確実に接合する
ことができ、例えば高温かつ温度変化の大きい雰
囲気で良好に作動する半導体歪ゲージを実現する
ことができる。 As described above, according to the bonding structure of the present invention, a diamond body and another metal can be easily and reliably bonded, and, for example, a semiconductor strain gauge that operates well in an atmosphere with high temperatures and large temperature changes can be realized. I can do it.
第１図ないし第４図は本発明の一実施例を示
し、第１図は歪ゲージの全体断面図、第２図はそ
の全体平面図、第３図は各歪ゲージの接続図、第
４図は圧力検出器の全体断面図、第５図、第６図
は本発明の他の例を示すそれぞれ歪ゲージの全体
断面図および圧力検出器の全体断面図である。
１……圧力検出器ハウジング、３……センシン
グボデー、３１……フランジン部（他の金属体）、
３１ａ……開口、３１１……ダイヤフラム、４，
４Ａ，４Ｂ，４Ｃ，４Ｄ……歪ゲージ、４１，４
２，４３，４４……電極、４７……ダイヤモンド
単結晶板、４８……ダイヤモンド半導体膜、４９
……ろう材、５２，５２Ａ，５２Ｂ，５２Ｃ，５
２Ｄ……ワイヤ（他の金属体）。
1 to 4 show one embodiment of the present invention, in which FIG. 1 is an overall sectional view of the strain gauge, FIG. 2 is an overall plan view thereof, FIG. 3 is a connection diagram of each strain gauge, and FIG. The figure is an overall sectional view of a pressure detector, and FIGS. 5 and 6 are an overall sectional view of a strain gauge and a pressure detector, respectively, showing other examples of the present invention. 1... Pressure detector housing, 3... Sensing body, 31... Flange part (other metal body),
31a...opening, 311...diaphragm, 4,
4A, 4B, 4C, 4D...Strain gauge, 41, 4
2, 43, 44...electrode, 47...diamond single crystal plate, 48...diamond semiconductor film, 49
...Brazing metal, 52, 52A, 52B, 52C, 5
2D...Wire (other metal object).
Claims (1)
不純物を混入せしめてなるダイヤモンド半導体
を、これら単結晶体ないし半導体側より順次積層
した少なくともチタン、金の各金属膜を介して他
の金属体に接合したことを特徴とするダイヤモン
ド体と金属体の接合構造。 ２ 上記ダイヤモンド半導体は、ダイヤモンドに
ボロン（Ｂ）ないしリン（Ｐ）を混入せしめてな
る特許請求の範囲第１項記載のダイヤモンド体と
金属体の接合構造。 ３ 上記チタン膜と金膜の間に白金膜を介在せし
めた特許請求の範囲第１項記載のダイヤモンド体
と金属体の接合構造。 ４ 上記各金属膜を蒸着ないしスパツタにより形
成した特許請求の範囲第１項または第３項記載の
ダイヤモンド体と金属体の接合構造。 ５ 上記金膜を他の金属体にろう付けないしワイ
ヤボンデイングにより接合した特許請求の範囲第
１項記載のダイヤモンド体と金属体の接合構造。 ６ 上記ダイヤモンド半導体は上記ダイヤモンド
単結晶体上に形成した歪ゲージであり、上記単結
晶体を圧力検出器の圧力室壁の一部を構成するス
テンレス製ダイヤフラムに上記各金属膜を介して
接合した特許請求の範囲第１項記載のダイヤモン
ド体と金属体の接合構造。 ７ 上記ダイヤモンド半導体は上記ダイヤモンド
単結晶体上に形成した歪ゲージであり、上記単結
晶体を圧力検出器のステンレス製圧力室壁の一部
に設けた開口を覆うように、上記各金属膜を介し
て上記開口縁に接合した特許請求の範囲第１項記
載のダイヤモンド体と金属体の接合構造。[Scope of Claims] 1. A diamond single crystal or a diamond semiconductor formed by mixing impurities into diamond, and another metal body through at least titanium and gold metal films sequentially stacked from the single crystal or semiconductor side. A bonded structure of a diamond body and a metal body, characterized in that they are bonded to each other. 2. The bonding structure of a diamond body and a metal body according to claim 1, wherein the diamond semiconductor is formed by mixing boron (B) or phosphorus (P) into diamond. 3. The bonding structure of a diamond body and a metal body according to claim 1, wherein a platinum film is interposed between the titanium film and the gold film. 4. A bonding structure between a diamond body and a metal body according to claim 1 or 3, wherein each of the metal films is formed by vapor deposition or sputtering. 5. The bonding structure of a diamond body and a metal body according to claim 1, wherein the gold film is bonded to another metal body by brazing or wire bonding. 6 The diamond semiconductor is a strain gauge formed on the diamond single crystal body, and the single crystal body is bonded to a stainless steel diaphragm that constitutes a part of the pressure chamber wall of a pressure detector via each of the metal films. A joining structure of a diamond body and a metal body according to claim 1. 7. The diamond semiconductor is a strain gauge formed on the single crystal diamond, and each of the metal films is formed on the single crystal so as to cover an opening provided in a part of the stainless steel pressure chamber wall of the pressure sensor. A bonding structure of a diamond body and a metal body according to claim 1, wherein the diamond body and the metal body are bonded to the edge of the opening via the diamond body.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60295813A JPS62151732A (en) | 1985-12-26 | 1985-12-26 | Joining structure for diamond body to metal body |
| US06/946,478 US4768011A (en) | 1985-12-24 | 1986-12-24 | Joint structure for diamond body and metallic body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60295813A JPS62151732A (en) | 1985-12-26 | 1985-12-26 | Joining structure for diamond body to metal body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62151732A JPS62151732A (en) | 1987-07-06 |
| JPH0585856B2 true JPH0585856B2 (en) | 1993-12-09 |
Family
ID=17825494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60295813A Granted JPS62151732A (en) | 1985-12-24 | 1985-12-26 | Joining structure for diamond body to metal body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62151732A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07121525B2 (en) * | 1990-03-12 | 1995-12-25 | 富士通株式会社 | Green sheet molding method |
| WO2010150302A1 (en) * | 2009-06-22 | 2010-12-29 | トヨタ自動車株式会社 | Pressure sensor and method for manufacturing the same |
-
1985
- 1985-12-26 JP JP60295813A patent/JPS62151732A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62151732A (en) | 1987-07-06 |
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