JPH0584628B2 - - Google Patents
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- Publication number
- JPH0584628B2 JPH0584628B2 JP14913686A JP14913686A JPH0584628B2 JP H0584628 B2 JPH0584628 B2 JP H0584628B2 JP 14913686 A JP14913686 A JP 14913686A JP 14913686 A JP14913686 A JP 14913686A JP H0584628 B2 JPH0584628 B2 JP H0584628B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- photocathode
- ultraviolet lamp
- electron beam
- photoelectrons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010894 electron beam technology Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 5
- FHGTUGKSLIJMAV-UHFFFAOYSA-N tricesium;antimony Chemical compound [Sb].[Cs+].[Cs+].[Cs+] FHGTUGKSLIJMAV-UHFFFAOYSA-N 0.000 claims description 3
- SOWXYAAAVMKBPO-UHFFFAOYSA-N [Cs].[O].[Bi].[Ag] Chemical compound [Cs].[O].[Bi].[Ag] SOWXYAAAVMKBPO-UHFFFAOYSA-N 0.000 claims description 2
- 230000004907 flux Effects 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000003472 neutralizing effect Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Description
【発明の詳細な説明】
(イ) 産業上の利用分野
この発明は、主に電子顕微鏡や電子線露光装置
などに用いられる電子線照射装置に係り、とく
に、その試料表面の帯電を中和させる帯電防止装
置に関する。[Detailed Description of the Invention] (a) Field of Industrial Application This invention relates to an electron beam irradiation device mainly used in electron microscopes, electron beam exposure devices, etc. It relates to an antistatic device.
(ロ) 従来の技術
高速の電子が試料に照射されると、試料面から
二次電子が放出される。しかし、入射した電子の
電荷量と放出された電子の電荷量との間に差が生
じるので、試料が電気絶縁性の物質である場合に
は、試料表面に帯電が起こり、試料の絶縁破壊や
試料表面付近の電界の乱れによる像質の低下など
の問題を生じる。(b) Conventional technology When a sample is irradiated with high-speed electrons, secondary electrons are emitted from the sample surface. However, since there is a difference between the amount of charge of the incident electrons and the amount of charge of the emitted electrons, if the sample is an electrically insulating material, the surface of the sample will be charged, causing dielectric breakdown of the sample. This causes problems such as a decline in image quality due to disturbances in the electric field near the sample surface.
通常、入射する電子数よりも放出される二次電
子数の方が多いため、電子は正に帯電する。従つ
て、この帯電防止のために、試料近傍にヒータ線
を設けそのヒータ線に電流を通じて熱電子を放出
させ、それによつて試料の帯電を中和させること
が考えられる。 Usually, the number of secondary electrons emitted is greater than the number of incident electrons, so the electrons are positively charged. Therefore, in order to prevent this charging, it is conceivable to provide a heater wire near the sample and cause the heater wire to emit thermoelectrons by passing an electric current through the heater wire, thereby neutralizing the charging of the sample.
(ハ) 発明が解決しようとする問題点
しかしながら、ヒータ線によつて生ずる電界が
試料表面付近の電界を乱すために、電子顕微鏡や
電子線露光装置などのように電子線の位置を精密
に制御する場合には、像の乱れや描画パターンの
ずれが生じるという問題点がある。(c) Problems to be solved by the invention However, since the electric field generated by the heater wire disturbs the electric field near the sample surface, the position of the electron beam is precisely controlled in electron microscopes and electron beam exposure devices. In this case, there are problems such as image disturbance and deviation of the drawn pattern.
この発明は、このような事情を考慮してなされ
たもので、装置内の電界を乱すことなく試料の帯
電を防止することが可能な電子線照射装置におけ
る帯電防止装置を提供するものである。 The present invention has been made in consideration of these circumstances, and provides an antistatic device for an electron beam irradiation device that can prevent charging of a sample without disturbing the electric field within the device.
(ニ) 問題点を解決するための手段
この発明は、電子を放出する電子銃と、電子線
束を微細は収束させて試料に照射する収束レンズ
を備えた電子線照射装置に設置されるものであつ
て、光電陰極材料で形成した光電陰極面と、その
光電陰極面に紫外線を照射して光電子を放出させ
る紫外線ランプとを備え、かつ、光電子が試料面
に供給されるように光電陰極面と紫外線ランプが
配置されてなる電子線照射装置における帯電防止
装置である。(d) Means for Solving Problems This invention is installed in an electron beam irradiation device equipped with an electron gun that emits electrons and a converging lens that finely converges the electron beam flux and irradiates the sample. The photocathode surface is provided with a photocathode surface formed of a photocathode material, and an ultraviolet lamp that irradiates the photocathode surface with ultraviolet rays to emit photoelectrons. This is an antistatic device in an electron beam irradiation device in which an ultraviolet lamp is arranged.
さらに、上記光電陰極材料が透明板表面に塗布
され、紫外線ランプがその透明板を裏面から照射
するよう配置されることが好ましい。 Furthermore, it is preferable that the photocathode material is applied to the surface of a transparent plate, and the ultraviolet lamp is arranged to irradiate the transparent plate from the back side.
また、光電陰極面がアンチモン化セシウム
（Cs3Sb）陰極、ビスマス−銀−酸素−セシウム
陰極又はバイアルカリ陰極が形成される。 Further, the photocathode surface is formed as a cesium antimonide (Cs 3 Sb) cathode, a bismuth-silver-oxygen-cesium cathode, or a bialkali cathode.
(ホ) 作用
光電陰極面に紫外線ランプから紫外線が照射さ
れると、光電陰極面から光電子が放出され、試料
面に供給されて試料の帯電電荷を中和させる。(e) Effect When the photocathode surface is irradiated with ultraviolet light from an ultraviolet lamp, photoelectrons are emitted from the photocathode surface and supplied to the sample surface to neutralize the electrical charges on the sample.
(ヘ) 実施例
以下、図面に示す実施例に基づいてこの発明を
詳述する。なお、これによつてこの発明が限定さ
れるものではない。(F) Embodiments The present invention will be described in detail below based on embodiments shown in the drawings. Note that this invention is not limited to this.
第１図はこの発明の一実施例の電子顕微鏡の概
略構成を示す説明図であり、１は本体、２は電子
を放出する電子銃、３は電子銃２から放出される
電子線４を微細に収束させて試料５に照射する収
束レンズ６は試料５が収束レンズ３からの収束さ
れた電子線４によつて照射される位置に試料５を
保持する金属製の試料台である。試料５の近傍に
は光電陰極面８を備え光電子９を試料５の表面に
照射する光電子発生器７が配置されている。 FIG. 1 is an explanatory diagram showing a schematic configuration of an electron microscope according to an embodiment of the present invention, in which 1 is a main body, 2 is an electron gun that emits electrons, and 3 is a microscopic view of an electron beam 4 emitted from the electron gun 2. A converging lens 6 that irradiates the sample 5 with convergent electron beams is a metal sample stage that holds the sample 5 at a position where the sample 5 is irradiated with the converged electron beam 4 from the converging lens 3. A photoelectron generator 7 having a photocathode surface 8 and irradiating the surface of the sample 5 with photoelectrons 9 is arranged near the sample 5 .
１０は試料５から放出する二次電子、１１，１
２は光電陰極面８および試料台６をそれぞれ接地
する接地線である。 10 is a secondary electron emitted from sample 5, 11,1
Reference numeral 2 denotes a grounding wire that grounds the photocathode surface 8 and the sample stage 6, respectively.
第２図に示すように、光電子発生器７は、表面
に光電陰極面８を有する石英ガラス１３と、紫外
線ランプ１４と、紫外線ランプ１４の紫外線を石
英ガラスへ導くライトパイプ１５とを備え、紫外
線ランプ１４の放射する紫外線を石英ガラス１３
の裏面に照射することによつて光電陰極面８の表
面から光電子９が放出されるように構成されてい
る。とくに、光電子発生器７の位置は、光電陰極
面８から放出される光電子９が試料１０に十分到
達するように配慮されている。 As shown in FIG. 2, the photoelectron generator 7 includes a quartz glass 13 having a photocathode surface 8 on its surface, an ultraviolet lamp 14, and a light pipe 15 that guides ultraviolet rays from the ultraviolet lamp 14 to the quartz glass. The quartz glass 13 absorbs the ultraviolet rays emitted by the lamp 14.
The structure is such that photoelectrons 9 are emitted from the surface of the photocathode surface 8 by irradiating the back surface thereof. In particular, the position of the photoelectron generator 7 is taken into consideration so that the photoelectrons 9 emitted from the photocathode surface 8 sufficiently reach the sample 10.
なお、光電陰極面８は、厚さ0.5mmの石英ガラ
ス１３の上にアンチモンを蒸着して厚さ1μmの膜
を形成した後、さらにその上にセシウムを蒸着し
て厚さ1μmの膜を形成する。このようにして得ら
れた光電陰極面８は半透明状となる。この場合、
光電陰極面８の最も多く光電子を放出する光の波
長、つまり最大感度波長は400nm付近となるの
で、紫外線ランプ１４には近紫外用のものを使用
する。このように形成された光電子発生器７は、
0.11mの光に対して数μAの光電流が得られる、
つまり、量子効率が10％程度となり、しかも、光
量に対する光電流（光電子量）は直線的に変化す
る特性を有するものとなる。 The photocathode surface 8 is made by depositing antimony on a quartz glass 13 with a thickness of 0.5 mm to form a film with a thickness of 1 μm, and then depositing cesium on top of it to form a film with a thickness of 1 μm. do. The photocathode surface 8 thus obtained becomes translucent. in this case,
Since the wavelength of the light from which the photocathode surface 8 emits the most photoelectrons, that is, the maximum sensitivity wavelength, is around 400 nm, a near-ultraviolet lamp is used as the ultraviolet lamp 14. The photoelectron generator 7 formed in this way is
A photocurrent of several μA can be obtained for light at 0.11 m.
In other words, the quantum efficiency is approximately 10%, and the photocurrent (photoelectron amount) changes linearly with respect to the amount of light.
このような構成において、電子銃２から試料５
上に電子線４が照射されると、二次電子１０が放
出され、試料５が絶縁物の場合には、試料５は正
に帯電しようとするが、この時、紫外線ランプ１
４を点灯するとその紫外線が石英ガラス１３を介
して光電陰極面８を照射し、それによつて光電陰
極面８の表面から光電子９が放出される。試料台
６および光電陰極面はともに接地されているの
で、光電子９は試料５の正電荷によつて形成され
る電界によつて試料５に供給され、試料５を中和
させる。なお、光電子量は紫外線ランプ１４の光
量に比例して変化するので、必要な光電子量を容
易に設定することができる。 In such a configuration, the sample 5 is
When the electron beam 4 is irradiated onto the sample 5, secondary electrons 10 are emitted, and if the sample 5 is an insulator, the sample 5 tries to be positively charged, but at this time, the ultraviolet lamp 1
When the photocathode 4 is turned on, the ultraviolet light irradiates the photocathode surface 8 through the quartz glass 13, whereby photoelectrons 9 are emitted from the surface of the photocathode surface 8. Since both the sample stage 6 and the photocathode surface are grounded, the photoelectrons 9 are supplied to the sample 5 by the electric field formed by the positive charges of the sample 5, thereby neutralizing the sample 5. Note that since the amount of photoelectrons changes in proportion to the amount of light from the ultraviolet lamp 14, the required amount of photoelectrons can be easily set.
このようにして、試料表面の二次電子放出によ
る帯電作用が防止され、電子線４の位置制御が精
密に行われるとともに、電子顕微鏡における像の
乱れや描画パターンのずれの発生などの防止され
る。 In this way, the charging effect due to secondary electron emission on the sample surface is prevented, the position of the electron beam 4 is precisely controlled, and the occurrence of image disturbance and drawing pattern deviation in the electron microscope is prevented. .
(ト) 発明の効果
この発明によれば、光電子を試料に供給するこ
とにより、試料近傍の電界を乱すことなく試料の
帯電を中和させることができるので、試料の絶縁
破壊が防止され、さらに、電子線の位置制御が精
密に行われるとともに、電子顕微鏡における像の
乱れや描画パターンのずれが防止される。(g) Effects of the Invention According to the present invention, by supplying photoelectrons to the sample, it is possible to neutralize the charge on the sample without disturbing the electric field near the sample, thereby preventing dielectric breakdown of the sample and further In addition, the position of the electron beam is precisely controlled, and image disturbance and deviation of the drawing pattern in the electron microscope are prevented.
第１図はこの発明の一実施例の電子顕微鏡の構
成を示す説明図、第２図は第１図の部分詳細説明
図である。
１……本体、２……電子銃、３……収束レン
ズ、４……電子線、５……試料、６…試料台、８
……光電陰極面、９……光電子、１０……二次電
子、１３……石英ガラス、１４……紫外線ラン
プ。
FIG. 1 is an explanatory diagram showing the configuration of an electron microscope according to an embodiment of the present invention, and FIG. 2 is a partially detailed explanatory diagram of FIG. 1. 1... Main body, 2... Electron gun, 3... Converging lens, 4... Electron beam, 5... Sample, 6... Sample stage, 8
... Photocathode surface, 9 ... Photoelectron, 10 ... Secondary electron, 13 ... Quartz glass, 14 ... Ultraviolet lamp.
Claims (1)
収束させて試料する照射する収束レンズを備えた
電子線照射装置に設置されるものであつて、 光電陰極材料で形成した光電陰極面と、その光
電陰極面に紫外線を照射して光電子を放出させる
紫外線ランプとを備え、かつ、光電子が試料面に
供給されるように光電陰極面と紫外線ランプが配
置されてなる電子線照射装置における帯電防止装
置。 ２ 光電陰極材料が透明板表面に塗布され、紫外
線ランプがその透明板を裏面から照射するよう配
置されてなる特許請求の範囲第１項記載の帯電防
止装置。 ３ 光電陰極材料がアンチモン化セシウムである
特許請求の範囲第１項記載の帯電防止装置。 ４ 光電陰極面がアンチモン化セシウム陰極、ビ
スマス−銀−酸素−セシウム陰極、又は、バイア
ルカリ陰極からなる特許請求の範囲第１項記載の
帯電防止装置。[Scope of Claims] 1. An electron beam irradiation device equipped with an electron gun that emits electrons and a converging lens that finely converges the electron beam flux and irradiates the sample, and is made of a photocathode material. an ultraviolet lamp that irradiates the photocathode surface with ultraviolet rays to emit photoelectrons, and the photocathode surface and the ultraviolet lamp are arranged so that the photoelectrons are supplied to the sample surface. Antistatic device for radiation irradiation equipment. 2. The antistatic device according to claim 1, wherein a photocathode material is applied to the surface of a transparent plate, and an ultraviolet lamp is arranged to irradiate the transparent plate from the back side. 3. The antistatic device according to claim 1, wherein the photocathode material is cesium antimonide. 4. The antistatic device according to claim 1, wherein the photocathode surface comprises a cesium antimonide cathode, a bismuth-silver-oxygen-cesium cathode, or a bialkali cathode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14913686A JPS636737A (en) | 1986-06-25 | 1986-06-25 | Antistatic unit for electron beam irradiation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14913686A JPS636737A (en) | 1986-06-25 | 1986-06-25 | Antistatic unit for electron beam irradiation device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS636737A JPS636737A (en) | 1988-01-12 |
| JPH0584628B2 true JPH0584628B2 (en) | 1993-12-02 |
Family
ID=15468533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14913686A Granted JPS636737A (en) | 1986-06-25 | 1986-06-25 | Antistatic unit for electron beam irradiation device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS636737A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7241993B2 (en) | 2000-06-27 | 2007-07-10 | Ebara Corporation | Inspection system by charged particle beam and method of manufacturing devices using the system |
| KR100873447B1 (en) * | 2000-07-27 | 2008-12-11 | 가부시키가이샤 에바라 세이사꾸쇼 | Sheet beam test apparatus |
| JP4828162B2 (en) * | 2005-05-31 | 2011-11-30 | 株式会社日立ハイテクノロジーズ | Electron microscope application apparatus and sample inspection method |
| JP4796791B2 (en) * | 2005-06-08 | 2011-10-19 | 株式会社ホロン | Charged particle beam apparatus and charged particle beam image generation method |
| JP4994749B2 (en) * | 2006-09-05 | 2012-08-08 | 株式会社アドバンテスト | Electron beam size measuring apparatus and electron beam size measuring method |
-
1986
- 1986-06-25 JP JP14913686A patent/JPS636737A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS636737A (en) | 1988-01-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |